CN220121849U - Gallium oxide solar blind ultraviolet detector - Google Patents
Gallium oxide solar blind ultraviolet detector Download PDFInfo
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- CN220121849U CN220121849U CN202321004222.1U CN202321004222U CN220121849U CN 220121849 U CN220121849 U CN 220121849U CN 202321004222 U CN202321004222 U CN 202321004222U CN 220121849 U CN220121849 U CN 220121849U
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- gallium oxide
- oxide layer
- solar blind
- substrate
- blind ultraviolet
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 90
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 90
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 239000004038 photonic crystal Substances 0.000 claims abstract description 22
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 abstract description 24
- 230000035945 sensitivity Effects 0.000 abstract description 9
- 238000000825 ultraviolet detection Methods 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 230000031700 light absorption Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The utility model relates to the technical field of ultraviolet detection, and provides a gallium oxide solar blind ultraviolet detector, which comprises a substrate, a first gallium oxide layer, a second gallium oxide layer and a metal electrode, wherein the substrate is provided with a first gallium oxide layer; the first gallium oxide layer is arranged on the substrate, and the second gallium oxide layer is arranged on one side of the first gallium oxide layer, which is away from the substrate; the metal electrode is arranged on the second gallium oxideIs provided; and a plurality of round holes are etched on the upper side of the second gallium oxide, and are distributed in an array mode to form a photonic crystal. The detector greatly improves Ga 2 O 3 The ultraviolet light absorption and photoelectric conversion efficiency has the advantages of high signal-to-noise ratio and high sensitivity, and can be well applied to the field of solar blind ultraviolet detection.
Description
Technical Field
The utility model relates to the technical field of ultraviolet detection, in particular to a gallium oxide solar blind ultraviolet detector.
Background
Solar radiation with a wavelength less than 280nm hardly reaches the earth's surface due to absorption and scattering by the ozone layer and the atmosphere, and is therefore called solar blind zone (220 nm to 280 nm). The solar blind detector is characterized in that under an external electric field, when solar blind ultraviolet light irradiates on the surface of a metal or semiconductor material and the like by utilizing a photoelectric principle, if the solar blind ultraviolet light energy is large enough, photo-generated carriers can be generated in the material, photo-generated electrons and photo-generated holes are respectively collected by electrodes on two sides to form photocurrent, electric signals different from those under the condition of no irradiation are generated, and the information such as the energy, the intensity and the like of the incident light can be analyzed by utilizing the electric signals generated by the irradiation. The solar blind ultraviolet photoelectric detector has wide application in the fields of ultraviolet communication, fire monitoring, environmental protection and the like by virtue of the good anti-interference capability.
Gallium oxide (Ga) 2 O 3 ) The material is a fourth-generation wide-bandgap semiconductor material subsequent to Si, siC and GaN, has the forbidden bandwidth of 4.4 eV-5.3 eV, has the advantages of high voltage resistance, high power, high frequency, radiation resistance, low cost and the like, can directionally detect ultraviolet light of a solar blind wave band, is not influenced by solar background radiation, and has natural solar blind characteristics. However, due to Ga 2 O 3 Due to self-compensating effects, it is currently difficult to obtain stable p-doped Ga with good conductivity 2 O 3 PIN photoelectric detectors with homojunction cannot be built, and most of PIN photoelectric detectors adopt structures such as MSM, heterojunction and the like to carry out Ga 2 O 3 Study of solar blind probes.
Thus, for Ga 2 O 3 Material properties, how to further increase Ga 2 O 3 The signal-to-noise ratio and the sensitivity of the solar blind detector becomeBased on the important direction of extensive research in the industry, the utility model provides a novel gallium oxide solar blind ultraviolet detector.
Disclosure of Invention
Based on the expression, the utility model provides a gallium oxide solar blind ultraviolet detector to solve the technical problems of insufficient signal-to-noise ratio and sensitivity of the existing gallium oxide detector.
The technical scheme for solving the technical problems is as follows:
the utility model provides a gallium oxide solar blind ultraviolet detector, which comprises: the device comprises a substrate, a first gallium oxide layer, a second gallium oxide layer and a metal electrode;
the first gallium oxide layer is arranged on the substrate, and the second gallium oxide layer is arranged on one side of the first gallium oxide layer, which is away from the substrate; the metal electrode is arranged on the upper surface of the second gallium oxide;
and a plurality of round holes are etched on the upper side of the second gallium oxide layer, and are distributed in an array mode to form a photonic crystal.
On the basis of the technical scheme, the utility model can be improved as follows.
Further, the metal electrode is in a circular ring shape, and the photonic crystal is arranged in a circular ring cavity of the metal electrode.
Further, the aperture of any round hole is 20-200 nm, and the hole depth is 200-700 nm.
Further, the distance between any two adjacent round holes is 300-500 nm.
Further, the substrate is Sn-doped beta-Ga 2 O 3 A substrate.
Further, the first gallium oxide layer and the second gallium oxide layer are both Si-doped n-type beta-Ga 2 O 3 A layer.
Further, the Si doping concentration of the first gallium oxide layer is 1x10 19 ～1x10 21 cm -3 ；
The Si doping concentration of the second gallium oxide layer is 1x10 15 ～1x10 17 cm -3 。
Further, the gallium oxide solar blind ultraviolet detector also comprises an ohmic electrode;
the ohmic electrode is connected with the substrate or the first gallium oxide layer.
Further, the ohmic electrode is arranged on one side of the substrate, which is away from the first gallium oxide layer.
Further, the ohmic electrode is arranged on one side of the first gallium oxide layer facing the second gallium oxide layer and is positioned at the edge of the first gallium oxide layer.
Compared with the prior art, the technical scheme of the utility model has the following beneficial technical effects:
the gallium oxide solar blind ultraviolet detector provided by the utility model is provided with a photonic crystal structure, wherein the photonic crystal is a regular optical structure manufactured by periodically arranged mediums with different refractive indexes, and can limit ultraviolet light in a photonic crystal cavity without being limited by illumination angles as an optical coupling structure with limitation and resonance enhancement on incident light, thereby playing a role in resonance enhancement and greatly improving Ga 2 O 3 Absorption of ultraviolet light and photoelectric conversion efficiency. Compared with the prior art, the gallium oxide solar blind ultraviolet detector has the advantages of high signal to noise ratio and high sensitivity, and can be well applied to the solar blind ultraviolet detection field.
Drawings
Fig. 1 is a schematic structural diagram of a gallium oxide solar blind ultraviolet detector provided in embodiment 1 of the present utility model;
FIG. 2 is a schematic top view of FIG. 1;
fig. 3 is a schematic structural diagram of a gallium oxide solar blind ultraviolet detector provided in embodiment 2 of the present utility model;
fig. 4 is a schematic structural diagram of a gallium oxide detector according to a first prior art;
fig. 5 is a schematic structural diagram of a gallium oxide detector according to a second prior art;
in the drawings, the list of components represented by the various numbers is as follows:
1. a substrate; 2. a first gallium oxide layer; 3. a second gallium oxide layer; 4. a metal electrode; 5. a photonic crystal; 6. an ohmic electrode.
Detailed Description
In order that the utility model may be readily understood, a more complete description of the utility model will be rendered by reference to the appended drawings. Embodiments of the utility model are illustrated in the accompanying drawings. This utility model may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
In describing embodiments of the present utility model, it should be noted that, unless explicitly stated and limited otherwise, the terms "coupled," "coupled," and "connected" should be construed broadly, and may be either a fixed connection, a removable connection, or an integral connection, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium. The specific meaning of the above terms in embodiments of the present utility model will be understood in detail by those of ordinary skill in the art.
Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the prior art, gallium oxide detectors generally adopt the following structure:
1. as shown in FIG. 4, 500nm p-GaN is epitaxially grown on a semi-insulating substrate or insulating substrate with a Mg doping concentration of 1x10 19 cm -3 Annealing, and depositing Ga metal on the sample in high-temperature and high-oxygen plasma environment to form beta-Ga on the p-GaN surface 2 O 3 Layer, finally ohmic electrode is manufactured to obtain heterojunction Ga 2 O 3 A detector.
However, this detector has the disadvantages: ga 2 O 3 Band gap ratio Ga of GaN heterojunction material 2 O 3 The detector has low responsivity to photons with short wavelength, so that the signal-to-noise ratio and the sensitivity of the detector are reduced; meanwhile, the self-powered power supply function is not provided.
2. As shown in fig. 5, on a semi-insulating substrate or insulationSequential epitaxial growth of n+Ga on a substrate 2 O 3 A layer with a Si doping concentration of 10 19 cm -3 And n-Ga 2 O 3 Layer (Si doping concentration 10) 15 ～10 16 cm-3) or UID-Ga 2 O 3 A layer; then at n-Ga 2 O 3 Making Ni/Au flat schottky electrode on the surface of the layer, and making Ti/Au ohmic electrode after mesa etching to obtain schottky Ga 2 O 3 A detector.
However, this detector has the disadvantages: although it can be self-powered, and probe response to solar blind wavelengths; but can be absorbed by Ga due to the ultraviolet light absorbed by the Schottky metal electrode 2 O 3 The effective ultraviolet light absorbed is greatly reduced, so that the signal-to-noise ratio and the sensitivity of the detector are reduced; and the performance of the detector is also affected by the incident angle of ultraviolet light.
Embodiments of the present utility model will be described in further detail with reference to fig. 1 to 3 and examples, which are provided to illustrate the present utility model but not to limit the scope of the present utility model.
As shown in fig. 1, the gallium oxide solar blind ultraviolet detector provided by the embodiment of the utility model includes: a substrate 1, a first gallium oxide layer 2, a second gallium oxide layer 3 and a metal electrode 4.
The first gallium oxide layer 2 is arranged on the substrate 1, and the second gallium oxide layer 3 is arranged on one side of the first gallium oxide layer 2, which is away from the substrate 1; the metal electrode 4 is provided on the upper surface of the second gallium oxide.
As shown in fig. 1 and fig. 2, a plurality of round holes are etched on the upper side of the second gallium oxide layer 3, and the plurality of round holes are arranged in an array, so that a photonic crystal 5 is formed. The specific number of the round holes is not limited, and the round holes can be arranged according to actual needs.
Further, as shown in fig. 2, the metal electrode 4 is annular, and the photonic crystal 5 is disposed in the annular cavity of the metal electrode 4. Correspondingly, in a preferred example, the plurality of round holes on the upper side of the second gallium oxide layer 3 are circularly arranged. The effective ultraviolet irradiation area can be increased by adopting the circular Schottky metal electrode 4, and the sensitivity of the detector is further improved.
Wherein the aperture of any round hole is 20-200 nm, and the depth of the hole is 200-700 nm.
The distance between any two adjacent round holes is 300-500 nm.
Further, based on the above embodiment, the substrate 1 is Sn-doped beta-Ga 2 O 3 A substrate.
Preferably, the first gallium oxide layer 2 and the second gallium oxide layer 3 are both Si-doped n-type beta-Ga 2 O 3 A layer. Wherein the Si doping concentration of the first gallium oxide layer 2 is 1x10 19 ～1x10 21 cm -3 Optionally 5X10 19 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The second gallium oxide layer 3 has a Si doping concentration of 1x10 15 ～1x10 17 cm -3 Alternatively 1X10 16 cm -3 。
Further, the gallium oxide solar blind ultraviolet detector further comprises an ohmic electrode 6 on the basis of the above embodiment.
The ohmic electrode 6 is connected to the substrate 1 or the first gallium oxide layer 2. There are two arrangements here:
the first way is: as shown in fig. 1, the ohmic electrode 6 is provided on the side of the substrate 1 facing away from the first gallium oxide layer 2, i.e. the ohmic electrode 6 is provided at the bottom of the first gallium oxide layer 2.
The second way is: as shown in fig. 3, the ohmic electrode 6 is provided on the side of the first gallium oxide layer 2 facing the second gallium oxide layer 3, and is located at the edge of the first gallium oxide layer 2. I.e. both the substrate 1 and the first gallium oxide have an excess, the ohmic electrode 6 being provided on the upper surface of the excess of the first gallium oxide layer 2.
For a better explanation of the above embodiments, description is given by way of specific examples:
example 1
As shown in FIG. 1, this embodiment provides a photonic crystal Ga with coplanar electrodes 2 O 3 Solar blind ultraviolet detector:
in Sn-doped beta-Ga 2 O 3 (010) On the substrate 1, 200nm n+beta-Ga is epitaxially grown in turn by MOCVD method 2 O 3 Layer (Si doping concentration 5x 1)0 19 cm -3 ) 600nm n-type beta-Ga 2 O 3 Layer (Si doping concentration 1x 10) 16 cm -3 ) Or 600nm beta-UID Ga 2 O 3 (unintentionally doped gallium oxide) layer. Adopts n-Ga 2 O 3 3/n+Ga 2 O 3 A homogeneous structure.
The photolithographic schottky metal electrode 4 was peeled off to make the metal electrode 4 in a ring shape having an inner diameter of 500 μm and a ring width of 5 μm, and the schottky metal Pt/au=20/200 nm.
Further, by utilizing electron beam lithography, circular holes with the aperture of 20 nm-200 nm and the interval of 300 nm-500 nm are inscribed at the upper end of the second gallium oxide layer 3 to form a photonic crystal pattern; the photonic crystal 5 is etched by ICP (inductively coupled plasma) with an etching depth of 200nm to 700nm.
Finally, the substrate 1 is thinned and polished to 100 μm; as shown in fig. 1, ohmic metal is deposited on the back side of the substrate 1, ohmic electrode 6 Ti/au=20/200 nm. Namely, the photonic crystal Ga of the coplanar electrode is obtained 2 O 3 Solar blind ultraviolet detector.
Example 2
As shown in FIG. 3, this embodiment provides a photonic crystal Ga with a hetero-surface electrode 2 O 3 Solar blind ultraviolet detector:
in beta-Ga 2 O 3 (010) On the substrate, 200nm n+ beta-Ga is epitaxially grown in turn by MOCVD method 2 O 3 Layer (Si doping concentration 5x 10) 19 cm -3 ) 600nm n-type beta-Ga 2 O 3 Layer (Si doping concentration 1x 10) 16 cm -3 ) Or 600nm beta-UID Ga 2 O 3 (unintentionally doped gallium oxide) layer.
The photolithographic schottky metal electrode 4 was peeled off to make the metal electrode 4 in a ring shape having an inner diameter of 500 μm and a ring width of 5 μm, and the schottky metal Pt/au=20/200 nm.
Further, by utilizing electron beam lithography, circular holes with the aperture of 20 nm-200 nm and the interval of 300 nm-500 nm are inscribed at the upper end of the second gallium oxide layer 3 to form a photonic crystal pattern; the photonic crystal 5 is etched by ICP (inductively coupled plasma) with an etching depth of 200nm to 700nm.
Carrying out mesa photoetching and etching on the first gallium oxide layer 2, wherein the etching depth is 700-800 nm, and n-Ga is exposed at the edge as shown in figure 3 2 O 3 At the exposed n-Ga 2 O 3 The ohmic metal electrode 4 was lithographically formed with an inner diameter of 600 μm and a ring width of 50 μm, ohmic metal Ti/au=20/200 nm.
Finally, the substrate 1 was thinned and polished to 100 μm. Namely, the photonic crystal Ga of the heterofacial electrode is obtained 2 O 3 Solar blind ultraviolet detector.
In summary, the gallium oxide solar blind ultraviolet detector provided by the embodiment of the utility model is provided with a photonic crystal structure, wherein the photonic crystal is a regular optical structure manufactured by periodically arranged mediums with different refractive indexes, and is used as an optical coupling structure with limitation and resonance enhancement on incident light, ultraviolet light can be limited in a photonic crystal cavity, the limitation of illumination angle is avoided, the effect of resonance enhancement is achieved, and Ga is greatly improved 2 O 3 Absorption of ultraviolet light and photoelectric conversion efficiency; in addition, the ring Schottky metal electrode is adopted, so that the ultraviolet irradiation effective area can be increased, and the sensitivity of the detector is further improved.
Compared with the prior art, the gallium oxide solar blind ultraviolet detector has the advantages of high signal to noise ratio, high sensitivity and self power supply, and can be well applied to the solar blind ultraviolet detection field.
In the description of the present specification, the description with reference to the term "particular example" or "some examples" or the like means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the embodiments of the utility model. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present utility model, and are not limiting; although the utility model has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present utility model.
Claims (7)
1. A gallium oxide solar blind ultraviolet detector, comprising: the device comprises a substrate, a first gallium oxide layer, a second gallium oxide layer and a metal electrode;
the first gallium oxide layer is arranged on the substrate, and the second gallium oxide layer is arranged on one side of the first gallium oxide layer, which is away from the substrate; the metal electrode is arranged on the upper surface of the second gallium oxide;
and a plurality of round holes are etched on the upper side of the second gallium oxide layer, and are distributed in an array mode to form a photonic crystal.
2. The gallium oxide solar blind ultraviolet detector according to claim 1, wherein the metal electrode is in a circular ring shape, and the photonic crystal is arranged in a circular ring cavity of the metal electrode.
3. The gallium oxide solar blind ultraviolet detector according to claim 2, wherein the aperture of any one of the round holes is 20-200 nm, and the hole depth is 200-700 nm.
4. A gallium oxide solar blind ultraviolet detector according to claim 3, wherein the distance between any two adjacent circular holes is 300-500 nm.
5. The gallium oxide solar blind ultraviolet detector of claim 1, further comprising an ohmic electrode;
the ohmic electrode is connected with the substrate or the first gallium oxide layer.
6. The gallium oxide solar blind ultraviolet detector according to claim 5, wherein the ohmic electrode is disposed on a side of the substrate facing away from the first gallium oxide layer.
7. The gallium oxide solar blind ultraviolet detector according to claim 6, wherein the ohmic electrode is disposed on a side of the first gallium oxide layer facing the second gallium oxide layer and at an edge of the first gallium oxide layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202321004222.1U CN220121849U (en) | 2023-04-27 | 2023-04-27 | Gallium oxide solar blind ultraviolet detector |
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| CN202321004222.1U CN220121849U (en) | 2023-04-27 | 2023-04-27 | Gallium oxide solar blind ultraviolet detector |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117650190A (en) * | 2023-12-19 | 2024-03-05 | 广东工业大学 | Plasmon electrode photoelectric detector suitable for unpolarized light |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117650190A (en) * | 2023-12-19 | 2024-03-05 | 广东工业大学 | Plasmon electrode photoelectric detector suitable for unpolarized light |
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