CN113097079B - 一种功率半导体模块制造方法 - Google Patents

一种功率半导体模块制造方法 Download PDF

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Publication number
CN113097079B
CN113097079B CN202110349044.5A CN202110349044A CN113097079B CN 113097079 B CN113097079 B CN 113097079B CN 202110349044 A CN202110349044 A CN 202110349044A CN 113097079 B CN113097079 B CN 113097079B
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China
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special
power semiconductor
shaped
water channel
layer
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CN202110349044.5A
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Chinese (zh)
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CN113097079A (zh
Inventor
雷光寅
邹强
范志斌
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Guanghua Lingang Engineering Application Technology Research and Development Shanghai Co Ltd
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Guanghua Lingang Engineering Application Technology Research and Development Shanghai Co Ltd
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Priority to CN202110349044.5A priority Critical patent/CN113097079B/zh
Priority to PCT/CN2021/087096 priority patent/WO2022205504A1/fr
Publication of CN113097079A publication Critical patent/CN113097079A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3672—Foil-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
CN202110349044.5A 2021-03-31 2021-03-31 一种功率半导体模块制造方法 Active CN113097079B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202110349044.5A CN113097079B (zh) 2021-03-31 2021-03-31 一种功率半导体模块制造方法
PCT/CN2021/087096 WO2022205504A1 (fr) 2021-03-31 2021-04-14 Procédé de fabrication de module semi-conducteur de puissance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110349044.5A CN113097079B (zh) 2021-03-31 2021-03-31 一种功率半导体模块制造方法

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CN113097079A CN113097079A (zh) 2021-07-09
CN113097079B true CN113097079B (zh) 2023-11-17

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CN (1) CN113097079B (fr)
WO (1) WO2022205504A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023093740A1 (fr) * 2021-11-23 2023-06-01 苏州汉天下电子有限公司 Puce de dispositif et son procédé de fabrication, substrat de dissipation de chaleur et son procédé de fabrication, et structure de conditionnement et son procédé de fabrication

Citations (8)

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JPH0661400A (ja) * 1992-08-10 1994-03-04 Fujitsu Ltd ヒートシンク付樹脂パッケージ半導体装置の製造方法
US6432749B1 (en) * 1999-08-24 2002-08-13 Texas Instruments Incorporated Method of fabricating flip chip IC packages with heat spreaders in strip format
CN101697448A (zh) * 2009-10-24 2010-04-21 永济新时速电机电器有限责任公司 变流器功率模块双面水冷散热基板
CN105377002A (zh) * 2015-12-04 2016-03-02 太仓陶氏电气有限公司 一种雪花形液体散热器
CN107045989A (zh) * 2016-12-20 2017-08-15 杰群电子科技（东莞）有限公司 一种半导体元件的封装方法及封装结构
CN109378938A (zh) * 2018-10-26 2019-02-22 中车株洲电机有限公司 电机的水冷却方法及电机机座
CN112040751A (zh) * 2020-09-28 2020-12-04 臻驱科技（上海）有限公司 一种水冷散热器和新能源汽车用电机控制器
CN212544348U (zh) * 2020-04-08 2021-02-12 合肥阳光电动力科技有限公司 液冷散热器及功率组件

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KR101214762B1 (ko) * 2011-04-28 2013-01-21 삼성전기주식회사 방열 기판
CN105127370B (zh) * 2014-05-28 2018-01-02 刘忠男 快速加热模具的冷却系统成型方法
AT517203B1 (de) * 2015-07-06 2016-12-15 Zkw Group Gmbh Leiterplatte sowie Verfahren zur Herstellung einer Leiterplatte
DE112017002999B4 (de) * 2016-06-16 2022-03-24 Mitsubishi Electric Corporation Halbleiter-montage-wärmeabführungs-basisplatte und herstellungsverfahren für dieselbe
DE102016218522B3 (de) * 2016-09-27 2017-06-22 Jenoptik Laser Gmbh Optische oder optoelektronische Baugruppe und Verfahren zur Herstellung dafür
CN206217110U (zh) * 2016-12-07 2017-06-06 东莞市康铭光电科技有限公司 一种三维打印成型的并联随形冷却水路模具镶件
FR3061600B1 (fr) * 2017-01-03 2020-06-26 Stmicroelectronics (Grenoble 2) Sas Dispositif electronique comprenant une puce rainuree
DE102017217537B4 (de) * 2017-10-02 2021-10-21 Danfoss Silicon Power Gmbh Leistungsmodul mit integrierter Kühleinrichtung
CN111554644B (zh) * 2020-06-12 2022-04-01 厦门通富微电子有限公司 一种芯片、芯片封装体及晶圆

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0661400A (ja) * 1992-08-10 1994-03-04 Fujitsu Ltd ヒートシンク付樹脂パッケージ半導体装置の製造方法
US6432749B1 (en) * 1999-08-24 2002-08-13 Texas Instruments Incorporated Method of fabricating flip chip IC packages with heat spreaders in strip format
CN101697448A (zh) * 2009-10-24 2010-04-21 永济新时速电机电器有限责任公司 变流器功率模块双面水冷散热基板
CN105377002A (zh) * 2015-12-04 2016-03-02 太仓陶氏电气有限公司 一种雪花形液体散热器
CN107045989A (zh) * 2016-12-20 2017-08-15 杰群电子科技（东莞）有限公司 一种半导体元件的封装方法及封装结构
CN109378938A (zh) * 2018-10-26 2019-02-22 中车株洲电机有限公司 电机的水冷却方法及电机机座
CN212544348U (zh) * 2020-04-08 2021-02-12 合肥阳光电动力科技有限公司 液冷散热器及功率组件
CN112040751A (zh) * 2020-09-28 2020-12-04 臻驱科技（上海）有限公司 一种水冷散热器和新能源汽车用电机控制器

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* Cited by examiner, † Cited by third party
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Effect of Heating Rate on Bonding Strength of Pressure-free Sintered Nanosilver Joint;Kewei Xiao等;《ICEP-IAAC 2015 Proceedings》;全文 *
Solar-thermal conversion and steam generation: a review;Lei Shi等;《Applied Thermal Engineering》;第179卷;全文 *
Thermo-Mechanical Reliability of Low-Temperature Sintered Attachments on Direct Bonded Aluminum (DBA) Substrate for High-Temperature Electronics Packaging;Guangyin Lei;《Virginia Tech Electronic Theses and Dissertations》;全文 *
洞悉亚马逊开发的集成散热功能的3D打印PCB;《网印工业》(第11期);全文 *
芯片级节流制冷器（MMR）的制造加工工艺研究进展及实验研究;童欣等;《真空与低温》;第26卷(第04期);全文 *

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CN113097079A (zh) 2021-07-09
WO2022205504A1 (fr) 2022-10-06

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