CN113097079B - Manufacturing method of power semiconductor module - Google Patents
Manufacturing method of power semiconductor module Download PDFInfo
- Publication number
- CN113097079B CN113097079B CN202110349044.5A CN202110349044A CN113097079B CN 113097079 B CN113097079 B CN 113097079B CN 202110349044 A CN202110349044 A CN 202110349044A CN 113097079 B CN113097079 B CN 113097079B
- Authority
- CN
- China
- Prior art keywords
- special
- power semiconductor
- shaped
- water channel
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 28
- 230000017525 heat dissipation Effects 0.000 claims abstract description 27
- 238000004806 packaging method and process Methods 0.000 claims abstract description 13
- 239000004020 conductor Substances 0.000 claims abstract description 10
- 230000000149 penetrating effect Effects 0.000 claims abstract description 4
- 241000533950 Leucojum Species 0.000 claims description 17
- 238000005538 encapsulation Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 238000010146 3D printing Methods 0.000 claims description 5
- 229920002877 acrylic styrene acrylonitrile Polymers 0.000 claims description 4
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 claims description 4
- 239000004743 Polypropylene Substances 0.000 claims description 3
- -1 polypropylene Polymers 0.000 claims description 3
- 229920001155 polypropylene Polymers 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000001816 cooling Methods 0.000 description 13
- 238000003754 machining Methods 0.000 description 7
- 238000010273 cold forging Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229920000800 acrylic rubber Polymers 0.000 description 1
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 1
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 210000004443 dendritic cell Anatomy 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229920000578 graft copolymer Polymers 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- QMRNDFMLWNAFQR-UHFFFAOYSA-N prop-2-enenitrile;prop-2-enoic acid;styrene Chemical compound C=CC#N.OC(=O)C=C.C=CC1=CC=CC=C1 QMRNDFMLWNAFQR-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229920001897 terpolymer Polymers 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
Abstract
The invention provides a manufacturing method of a power semiconductor module, which comprises the following steps: providing a heat dissipation substrate, and arranging a power semiconductor chip on one side surface of the heat dissipation substrate; forming a prefabricated water channel layer on one side of the heat dissipation substrate, which is away from the power semiconductor chip, wherein the prefabricated water channel layer is provided with a plurality of special-shaped grooves penetrating through the prefabricated water channel layer, and the special-shaped grooves expose the surface of the heat dissipation substrate, which is away from one side of the power semiconductor chip; filling each special-shaped groove with a heat conducting material to form a plurality of special-shaped radiating fins connected with the radiating substrate; forming a top packaging layer on the surface of one side of the prefabricated water channel layer, which faces the radiating substrate, wherein the top packaging layer coats the radiating substrate and the power semiconductor chip; forming a bottom packaging layer on the surface of the prefabricated water channel layer, which is opposite to the side of the radiating substrate, and covering the surface of the prefabricated water channel layer, which is opposite to the side of the power semiconductor chip; and removing the prefabricated water channel layer to form a water channel. The method can realize the formation of the power semiconductor module with the special-shaped radiating fins, reduce the difficulty of forming the special-shaped radiating fins and save the process cost.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a power semiconductor module manufacturing method.
Background
The heat dissipation capacity of a semiconductor power module is greatly dependent on the design of its heat dissipation channels. In conventional module packaging processes, the heat sink channels are typically implemented using powder sintering, cold forging, or finishing. The manufacturing cost is very high, the manufacturing period is very long, and the radiator is often limited by the processing means, so that the optimized water channel design cannot be fully realized. The heat dissipation device of the existing power semiconductor module is usually realized by a finish machining or cold forging mode. Finish machining has incomparable advantages in scale control, but is inevitably limited by high machining cost, and mass production is not easy to realize. Cold forging is the processing technology with the widest application range at present, and metals such as copper or aluminum are extruded into one or a plurality of dies at normal temperature or slightly higher temperature by applying mechanical pressure, thereby realizing low-cost and high-yield production. The disadvantage is that the shape of the heat sink cannot be too complex and is limited by the mold design and the mold release requirements.
Disclosure of Invention
Accordingly, the present invention provides a method of manufacturing a power semiconductor module. The method has the advantages that the power semiconductor module with the special-shaped radiating fins is formed, meanwhile, the processing difficulty is reduced, and the process cost is saved.
The invention provides a manufacturing method of a power semiconductor module, which comprises the following steps: providing a heat dissipation substrate, and arranging a power semiconductor chip on one side surface of the heat dissipation substrate; forming a prefabricated water channel layer on one side of the heat dissipation substrate, which is away from the power semiconductor chip, wherein the prefabricated water channel layer is provided with a plurality of special-shaped grooves penetrating through the prefabricated water channel layer, and the special-shaped grooves expose the surface of the heat dissipation substrate, which is away from one side of the power semiconductor chip; after the prefabricated water channel layer is formed, filling each special-shaped groove with a heat conducting material to form a plurality of special-shaped radiating fins connected with the radiating substrate; after the special-shaped radiating fin is formed, a top packaging layer is formed on the surface of the side, facing the radiating substrate, of the prefabricated water channel layer, and the top packaging layer coats the radiating substrate and the power semiconductor chip; forming a bottom packaging layer on the surface of the prefabricated water channel layer, which is opposite to the side of the radiating substrate, and covering the surface of the prefabricated water channel layer, which is opposite to the side of the power semiconductor chip; after the top and bottom encapsulation layers are formed, the prefabricated waterway layer is removed to form a waterway.
Optionally, the prefabricated waterway layer is formed by 3D printing.
Optionally, the step of forming the prefabricated waterway layer includes: the prefabricated waterway layer is formed using ABS plastic, ASA plastic or polypropylene.
Optionally, the special-shaped groove is a snowflake groove or a branch groove.
Optionally, the dendritic groove is: has a main body and at least more than two special-shaped grooves extending from the tail end of the main body.
Optionally, the snowflake type groove is: the heat dissipation structure comprises a main body, at least more than two branch rods extending from the side parts of the main body and at least more than two secondary branch rods extending from the side parts of the branch rods, wherein projection patterns on the cross section of any vertical heat dissipation substrate are special-shaped grooves with central symmetry patterns.
Optionally, the plurality of special-shaped grooves include a plurality of first special-shaped grooves and a plurality of second special-shaped grooves, and the structures of the first special-shaped grooves and the second special-shaped grooves are different.
Optionally, the step of forming the profiled fin includes: and forming a first special-shaped radiating fin in the first special-shaped groove, and forming a second special-shaped radiating fin in the second special-shaped groove, wherein the materials of the first special-shaped radiating fin and the second special-shaped radiating fin are different.
Optionally, in the step of forming the prefabricated water channel layer, the spacing between each first profiled groove and the spacing between each first profiled groove are different.
The invention has the beneficial effects that:
1. the method for manufacturing the power semiconductor module provided by the invention is used for manufacturing the power semiconductor module with the special-shaped cooling fin, the special-shaped cooling fin is formed by firstly forming the prefabricated water channel layer with the special-shaped groove, the heat conduction material is used for filling the special-shaped cooling fin, and the prefabricated water channel layer is removed after the top packaging layer and the bottom packaging layer are finished to form the water channel, so that the power semiconductor module with the special-shaped cooling fin is formed, the forming difficulty of the special-shaped cooling fin is reduced, and the process cost is saved.
2. According to the manufacturing method of the power semiconductor module, the prefabricated water channel layer is formed by using the 3D printing technology, so that the special-shaped grooves with various structures can be easily realized, the structural integrity and the firmness of the prefabricated water channel layer are ensured, the special-shaped grooves or special-shaped radiating fins are prevented from being formed by using a finish machining or cold forging mode, the machining difficulty is reduced, and the process cost is saved.
3. In the method for manufacturing the power semiconductor module provided by the invention, the special-shaped groove can be a snowflake groove or a branch groove. The snowflake type radiating fins or the branch type radiating fins can be formed in the subsequent steps by utilizing the snowflake type grooves or the branch type grooves, and compared with the traditional column type radiating fins or the traditional plate type radiating fins, the snowflake type radiating fins or the branch type radiating fins with the same volume have better radiating capacity, so that the radiating capacity of the power semiconductor device is improved, and the processing difficulty of the power semiconductor module with the snowflake type radiating fins or the branch type radiating fins can be reduced, and the process cost is saved.
4. In the method for manufacturing the power semiconductor module, the plurality of special-shaped grooves comprise the plurality of first special-shaped grooves and the plurality of second special-shaped grooves, and the structures of the first special-shaped grooves and the second special-shaped grooves are different, so that different special-shaped radiating fins can be formed at different positions, and radiating areas with different radiating capacities can be formed in the power semiconductor module so as to meet different radiating requirements.
5. In the method for manufacturing the power semiconductor module, the first special-shaped groove and the second special-shaped groove are formed by different materials, so that special-shaped radiating fins with different materials can be formed at different positions, and radiating areas with different radiating capacities can be formed in the power semiconductor module so as to meet different radiating requirements.
6. In the manufacturing method of the power semiconductor module, the intervals among the first special-shaped grooves and the intervals among the first special-shaped grooves are different, so that the intervals among the first special-shaped radiating fins and the second special-shaped radiating fins which are formed subsequently are different, and radiating areas with different radiating capacities can be formed in the power semiconductor module to meet different radiating demands.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic flow chart of a method for manufacturing a power semiconductor module according to the present invention;
fig. 2-6 are schematic views illustrating the status of each step in the manufacturing process of the power semiconductor module according to an embodiment of the invention;
fig. 7 to 8 are schematic structural views of a special-shaped groove and a special-shaped heat sink in the method for manufacturing a power semiconductor module according to the present invention.
Detailed Description
The invention provides a method for manufacturing a power semiconductor module. So as to meet the manufacturing requirement of the radiator with a complex shape, reduce the processing difficulty and save the process cost.
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
Example 1
Referring to fig. 1-8, the present embodiment provides a method for manufacturing a power semiconductor module, including the steps of:
s01: referring to fig. 2, a heat dissipation substrate is provided, and a power semiconductor chip 100 is disposed on one side surface of the heat dissipation substrate. The heat dissipation substrate includes an insulating layer 300, a first metal layer 200 and a second metal layer 400 disposed on both sides of the insulating layer, and the power semiconductor chip 100 is disposed on the first metal layer 200 on one side.
S02: referring to fig. 3, a prefabricated waterway layer 500 is formed at a side of the heat dissipation substrate facing away from the power semiconductor chip 100, the prefabricated waterway layer 500 having a plurality of shaped grooves 501 penetrating the prefabricated waterway layer 500, the shaped grooves 501 exposing a surface of the heat dissipation substrate facing away from the power semiconductor chip 100 (i.e., a surface of the second metal layer 400).
S03: referring to fig. 4, after the prefabricated waterway layer 500 is formed, each of the plurality of shaped grooves 501 is filled with a heat conductive material, forming a plurality of shaped heat sinks 401 connected to the heat radiating substrate.
S04: referring to fig. 5, after the shaped heat sink 401 is formed, a top encapsulation layer 600 is formed on a side surface of the prefabricated waterway layer 500 facing the heat dissipating substrate, and the top encapsulation layer encapsulates the heat dissipating substrate and the power semiconductor chip 100. A bottom encapsulation layer 700 is formed on the surface of the prefabricated water channel layer 500 on the side facing away from the heat dissipation substrate, and the bottom encapsulation layer 700 covers the surface of the prefabricated water channel layer 500 on the side facing away from the power semiconductor chip 100.
S05: referring to fig. 6, after the top and bottom encapsulation layers 600 and 700 are formed, the prefabricated waterway layer 500 is removed, forming a waterway 800.
Specifically, the prefabricated waterway layer 500 is formed by 3D printing. Wherein the thermally conductive material comprises copper, aluminum, carbon nanotubes or graphene. The material forming the top encapsulation layer 600 may be epoxy.
According to the manufacturing method of the power semiconductor module provided by the embodiment, the power semiconductor module with the special-shaped cooling fin 401 is manufactured by forming the prefabricated water channel layer with the special-shaped cooling fin 501 in advance, filling the special-shaped cooling fin 401 with the heat conducting material, removing the prefabricated water channel layer 500 after the top packaging layer 600 and the bottom packaging layer 700 are finished to form a water channel, particularly, forming the prefabricated water channel layer 500 in a 3D printing mode, the special-shaped cooling fin 501 with various structures can be easily realized, the structural integrity and firmness of the prefabricated water channel layer 500 are ensured, the special-shaped cooling fin 401 or the special-shaped cooling fin 501 is prevented from being formed in a finish machining or cold forging mode, the machining difficulty is reduced, and the process cost is saved.
In the method for manufacturing a power semiconductor module of the present embodiment, the step of forming the prefabricated waterway layer 500 includes: the ABS plastic (Acrylonitrile Butadiene Styrene plastic) is a terpolymer of three monomers of acrylonitrile (A), butadiene (B) and styrene (S), the ASA plastic (Acrylonitrile Styrene acrylate copolymer is a graft copolymer of acrylic rubber, acrylonitrile and styrene) or polypropylene is used for forming the prefabricated water channel layer.
It should be noted that, in fig. 2 to 6, the shaped grooves 501 and the shaped fins 401 are shown in regular patterns, and only for simplicity of illustration, the positions of the shaped grooves 501 and the shaped fins 401 are shown, and those skilled in the art should appreciate that, in fact, the structures of the shaped grooves 501 and the shaped fins 401 are not regular patterns, and specific forms can be referred to in the following description.
Referring to fig. 7 and 8, in some embodiments of the invention, the shaped grooves 501 comprise dendritic grooves 501a or snowflake grooves 501b.
Specifically, referring to fig. 7, the dendritic cell 501a is: has a main body and at least more than two special-shaped grooves extending from the tail end of the main body. The shaped heat sink 401 formed by filling it with a heat conductive material in the subsequent step is a branch-shaped heat sink 401a. It should be noted that the dendritic slot has various forms, only one form of the dendritic slot 501a is shown in fig. 7, which satisfies the above definition, and all the dendritic slots are considered as dendritic slots, and the shaped fins 401 formed by filling the dendritic fins 401a with a heat conducting material, and the specific form can be adjusted by those skilled in the art according to the actual situation. Referring to fig. 8, the snowflake-shaped groove 501b is: the heat dissipation structure comprises a main body, at least more than two branch rods extending from the side parts of the main body and at least more than two secondary branch rods extending from the side parts of the branch rods, wherein projection patterns on the cross section of any vertical heat dissipation substrate are special-shaped grooves with central symmetry patterns. The shaped heat sink 401, which is formed by filling it with a thermally conductive material in a subsequent step, is a snowflake-type heat sink 401b. It should be noted that, the snowflake type groove has various forms, only one snowflake type groove 501b is shown in fig. 8, which satisfies the above definition, and is considered as the snowflake type groove, and the irregular-shaped cooling fin 401 formed by filling the snowflake type cooling fin 401b with the heat conducting material, and the specific form can be selected by those skilled in the art according to the actual situation.
In the method for manufacturing a power semiconductor module provided in this embodiment, the special-shaped groove 501 may be a branch-shaped groove 501a or a snowflake-shaped groove 501b. The snowflake type radiating fin 401b or the branch type radiating fin 401a can be formed in the subsequent step by utilizing the snowflake type groove 501b or the branch type groove 501a, and compared with the traditional column type radiating fin or plate type radiating fin, the snowflake type radiating fin 401b or the branch type radiating fin 401a with the same volume has better radiating capacity, thereby being beneficial to improving the radiating capacity of a power semiconductor device, and the processing difficulty of the power semiconductor module with the snowflake type radiating fin 401b or the branch type radiating fin 401a can be reduced by the method, and the process cost is saved.
In some embodiments, the plurality of shaped grooves 501 may include a plurality of first shaped grooves and a plurality of second shaped grooves (not shown), the first shaped grooves and the second shaped grooves having different structures. Further, the step of forming the shaped fin filling each shaped groove in the plurality of shaped grooves includes: and forming a first special-shaped radiating fin in the first special-shaped groove, and forming a second special-shaped radiating fin in the second special-shaped groove, wherein the materials of the first special-shaped radiating fin and the second special-shaped radiating fin are different. Further, in the step of forming the prefabricated waterway layer, the intervals between the first profiled grooves and the intervals between the first profiled grooves are different. Therefore, a plurality of first special-shaped radiating fins and a plurality of second special-shaped radiating fins with different structures, materials and intervals among the radiating fins can be formed, and radiating areas with different radiating capacities can be formed in the power semiconductor module so as to meet different radiating requirements.
In addition, in the present embodiment, the step of removing the prefabricated waterway layer 500 may be performed by water washing or acetone solvent treatment to remove the prefabricated waterway layer 500.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the invention.
Claims (8)
1. A method of manufacturing a power semiconductor module, comprising the steps of:
providing a heat dissipation substrate, and arranging a power semiconductor chip on one side surface of the heat dissipation substrate;
forming a prefabricated water channel layer on one side of the heat dissipation substrate, which is away from the power semiconductor chip, wherein the prefabricated water channel layer is provided with a plurality of special-shaped grooves penetrating through the prefabricated water channel layer, and the special-shaped grooves expose the surface of the heat dissipation substrate, which is away from one side of the power semiconductor chip;
after the prefabricated water channel layer is formed, filling each special-shaped groove with a heat conducting material to form a plurality of special-shaped radiating fins connected with the radiating substrate;
after the special-shaped radiating fin is formed, a top packaging layer is formed on the surface of the side, facing the radiating substrate, of the prefabricated water channel layer, and the top packaging layer coats the radiating substrate and the power semiconductor chip; forming a bottom packaging layer on the surface of the prefabricated water channel layer, which is opposite to the side of the radiating substrate, and covering the surface of the prefabricated water channel layer, which is opposite to the side of the power semiconductor chip;
removing the prefabricated waterway layer after forming the top and bottom encapsulation layers to form a waterway;
wherein the prefabricated waterway layer is formed by 3D printing.
2. The method for manufacturing a power semiconductor module according to claim 1, wherein,
the step of forming the prefabricated waterway layer includes:
the prefabricated waterway layer is formed using ABS plastic, ASA plastic or polypropylene.
3. The method for manufacturing a power semiconductor module according to claim 1, wherein,
the special-shaped groove comprises a snowflake-shaped groove or a branch-shaped groove.
4. The method for manufacturing a power semiconductor module according to claim 3, wherein,
the branch type groove is as follows: has a main body and at least more than two special-shaped grooves extending from the tail end of the main body.
5. The method for manufacturing a power semiconductor module according to claim 3, wherein,
the snowflake type groove is as follows: the heat dissipation device comprises a main body, at least more than two branch rods extending from the side parts of the main body, at least more than two secondary branch rods extending from the side parts of the branch rods, and the projection patterns on the cross section of any vertical heat dissipation substrate are special-shaped grooves with central symmetry patterns.
6. The method for manufacturing a power semiconductor module according to claim 1, wherein,
the plurality of special-shaped grooves comprise a plurality of first special-shaped grooves and a plurality of second special-shaped grooves, and the structures of the first special-shaped grooves and the second special-shaped grooves are different.
7. The method for manufacturing a power semiconductor module according to claim 6, wherein,
the step of forming the special-shaped radiating fin comprises the following steps:
and forming a first special-shaped radiating fin in the first special-shaped groove, and forming a second special-shaped radiating fin in the second special-shaped groove, wherein the materials of the first special-shaped radiating fin and the second special-shaped radiating fin are different.
8. The method for manufacturing a power semiconductor module according to claim 7, wherein,
in the step of forming the prefabricated waterway layer,
the spacing between the first profiled grooves and the spacing between the second profiled grooves are different.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110349044.5A CN113097079B (en) | 2021-03-31 | 2021-03-31 | Manufacturing method of power semiconductor module |
| PCT/CN2021/087096 WO2022205504A1 (en) | 2021-03-31 | 2021-04-14 | Method for manufacturing power semiconductor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110349044.5A CN113097079B (en) | 2021-03-31 | 2021-03-31 | Manufacturing method of power semiconductor module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113097079A CN113097079A (en) | 2021-07-09 |
| CN113097079B true CN113097079B (en) | 2023-11-17 |
Family
ID=76671797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110349044.5A Active CN113097079B (en) | 2021-03-31 | 2021-03-31 | Manufacturing method of power semiconductor module |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN113097079B (en) |
| WO (1) | WO2022205504A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023093740A1 (en) * | 2021-11-23 | 2023-06-01 | 苏州汉天下电子有限公司 | Device chip and manufacturing method therefor, heat dissipation substrate and manufacturing method therefor, and packaging structure and manufacturing method therefor |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0661400A (en) * | 1992-08-10 | 1994-03-04 | Fujitsu Ltd | Manufacture of resin package semiconductor device provided with heat sink |
| US6432749B1 (en) * | 1999-08-24 | 2002-08-13 | Texas Instruments Incorporated | Method of fabricating flip chip IC packages with heat spreaders in strip format |
| CN101697448A (en) * | 2009-10-24 | 2010-04-21 | 永济新时速电机电器有限责任公司 | Two-side water cooling substrate of power module of current transformer |
| CN105377002A (en) * | 2015-12-04 | 2016-03-02 | 太仓陶氏电气有限公司 | Snowflake-shaped liquid radiator |
| CN107045989A (en) * | 2016-12-20 | 2017-08-15 | 杰群电子科技（东莞）有限公司 | The method for packing and encapsulating structure of a kind of semiconductor element |
| CN109378938A (en) * | 2018-10-26 | 2019-02-22 | 中车株洲电机有限公司 | The water-cooling method and electric machine stand of motor |
| CN112040751A (en) * | 2020-09-28 | 2020-12-04 | 臻驱科技（上海）有限公司 | Water-cooling radiator and new energy automobile motor controller |
| CN212544348U (en) * | 2020-04-08 | 2021-02-12 | 合肥阳光电动力科技有限公司 | Liquid cooling radiator and power assembly |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101214762B1 (en) * | 2011-04-28 | 2013-01-21 | 삼성전기주식회사 | Radiant heat substrate |
| CN105127370B (en) * | 2014-05-28 | 2018-01-02 | 刘忠男 | The cooling system forming method of rapidly heating moulds |
| AT517203B1 (en) * | 2015-07-06 | 2016-12-15 | Zkw Group Gmbh | Printed circuit board and method for producing a printed circuit board |
| JP6462958B2 (en) * | 2016-06-16 | 2019-01-30 | 三菱電機株式会社 | Radiation base plate for semiconductor mounting and manufacturing method thereof |
| DE102016218522B3 (en) * | 2016-09-27 | 2017-06-22 | Jenoptik Laser Gmbh | Optical or optoelectronic assembly and method of making the same |
| CN206217110U (en) * | 2016-12-07 | 2017-06-06 | 东莞市康铭光电科技有限公司 | A kind of conformal cooling water route in parallel inlaid piece of mould of 3 D-printing shaping |
| FR3061600B1 (en) * | 2017-01-03 | 2020-06-26 | Stmicroelectronics (Grenoble 2) Sas | ELECTRONIC DEVICE COMPRISING A GROOVED CHIP |
| DE102017217537B4 (en) * | 2017-10-02 | 2021-10-21 | Danfoss Silicon Power Gmbh | Power module with integrated cooling device |
| CN111554644B (en) * | 2020-06-12 | 2022-04-01 | 厦门通富微电子有限公司 | Chip, chip package and wafer |
-
2021
- 2021-03-31 CN CN202110349044.5A patent/CN113097079B/en active Active
- 2021-04-14 WO PCT/CN2021/087096 patent/WO2022205504A1/en unknown
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0661400A (en) * | 1992-08-10 | 1994-03-04 | Fujitsu Ltd | Manufacture of resin package semiconductor device provided with heat sink |
| US6432749B1 (en) * | 1999-08-24 | 2002-08-13 | Texas Instruments Incorporated | Method of fabricating flip chip IC packages with heat spreaders in strip format |
| CN101697448A (en) * | 2009-10-24 | 2010-04-21 | 永济新时速电机电器有限责任公司 | Two-side water cooling substrate of power module of current transformer |
| CN105377002A (en) * | 2015-12-04 | 2016-03-02 | 太仓陶氏电气有限公司 | Snowflake-shaped liquid radiator |
| CN107045989A (en) * | 2016-12-20 | 2017-08-15 | 杰群电子科技（东莞）有限公司 | The method for packing and encapsulating structure of a kind of semiconductor element |
| CN109378938A (en) * | 2018-10-26 | 2019-02-22 | 中车株洲电机有限公司 | The water-cooling method and electric machine stand of motor |
| CN212544348U (en) * | 2020-04-08 | 2021-02-12 | 合肥阳光电动力科技有限公司 | Liquid cooling radiator and power assembly |
| CN112040751A (en) * | 2020-09-28 | 2020-12-04 | 臻驱科技（上海）有限公司 | Water-cooling radiator and new energy automobile motor controller |
Non-Patent Citations (5)
| Title |
|---|
| Effect of Heating Rate on Bonding Strength of Pressure-free Sintered Nanosilver Joint;Kewei Xiao等;《ICEP-IAAC 2015 Proceedings》;全文 * |
| Solar-thermal conversion and steam generation: a review;Lei Shi等;《Applied Thermal Engineering》;第179卷;全文 * |
| Thermo-Mechanical Reliability of Low-Temperature Sintered Attachments on Direct Bonded Aluminum (DBA) Substrate for High-Temperature Electronics Packaging;Guangyin Lei;《Virginia Tech Electronic Theses and Dissertations》;全文 * |
| 洞悉亚马逊开发的集成散热功能的3D打印PCB;《网印工业》(第11期);全文 * |
| 芯片级节流制冷器（MMR）的制造加工工艺研究进展及实验研究;童欣等;《真空与低温》;第26卷(第04期);全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113097079A (en) | 2021-07-09 |
| WO2022205504A1 (en) | 2022-10-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11521914B2 (en) | Microelectronic assemblies having a cooling channel | |
| US20220102317A1 (en) | Thermal transfer structures for semiconductor die assemblies | |
| CN110010570B (en) | Manufacturing process of radio frequency micro-system assembly for liquid immersion heat dissipation | |
| KR101451495B1 (en) | Bumpless build-up layer package design with an interposer | |
| US7748440B2 (en) | Patterned structure for a thermal interface | |
| US7651601B2 (en) | Heat spreader with vapor chamber defined therein and method of manufacturing the same | |
| CN113097079B (en) | Manufacturing method of power semiconductor module | |
| US20220077105A1 (en) | Hybrid bonding structure and hybrid bonding method | |
| CN109585396A (en) | The laminate packaging semiconductor packages of thermal coupling | |
| JP2004518536A (en) | Heat dissipation device by injection molding | |
| US10763188B2 (en) | Integrated heat spreader having electromagnetically-formed features | |
| JP3186291U (en) | Soaking plate structure | |
| TW201530081A (en) | Device and system for dissipating heat, and method of making same | |
| US11581671B2 (en) | Integrated circuit package socket housing to enhance package cooling | |
| US20230128903A1 (en) | Enhanced base die heat path using through-silicon vias | |
| US9054074B2 (en) | One-dimensional hierarchical nested channel design for continuous feed manufacturing processes | |
| CN113345855A (en) | Thermal management materials for semiconductor devices and associated systems and methods | |
| CN115706080A (en) | Semiconductor structure and manufacturing method thereof | |
| CN213483737U (en) | Pin type heat sink and power module | |
| KR20240024636A (en) | Heat dissipation plate having heat dissipation fins integrally and hybrid mold for manufacturing the same | |
| TW201502457A (en) | Vapor chamber structure and manufacturing method thereof | |
| KR102245456B1 (en) | Heat sink and heat sink manufacturing method | |
| CN218864862U (en) | Partitioned micro-column heat conducting structure with directional heat transfer function | |
| CN217509292U (en) | Heat sink device | |
| CN210741200U (en) | Vacuum soaking plate and terminal |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |