CN113088871A - Film forming apparatus - Google Patents

Film forming apparatus Download PDF

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Publication number
CN113088871A
CN113088871A CN202011542861.4A CN202011542861A CN113088871A CN 113088871 A CN113088871 A CN 113088871A CN 202011542861 A CN202011542861 A CN 202011542861A CN 113088871 A CN113088871 A CN 113088871A
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China
Prior art keywords
substrate
film forming
chamber
cooling
forming apparatus
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CN202011542861.4A
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Chinese (zh)
Inventor
小林义仁
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Canon Tokki Corp
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Canon Tokki Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention provides a film forming apparatus, which can reduce the time spent on alignment to inhibit the increase of takt time and can save the space of a film forming chamber. The film forming apparatus of the present invention includes: a film forming chamber for forming a film on a substrate; and a transfer chamber provided with a transfer member for transferring the substrate to the film forming chamber, the transfer chamber including a substrate cooling unit for cooling the substrate.

Description

Film forming apparatus
Technical Field
The present invention relates to a film deposition apparatus.
Background
In a film forming apparatus for forming an organic light emitting element (organic EL element; OLED), a cooling mechanism for suppressing a temperature rise of a substrate is provided together with a substrate stage in order to suppress deterioration and degradation of an organic material to be deposited.
In order to improve the film deposition accuracy, the relative position between the substrate and the mask is measured before the film deposition process, and when the relative position is shifted, the substrate and/or the mask are moved relative to each other to adjust (align) the position. The alignment between the substrate and the mask is performed in two stages of a rough primary alignment and a high-precision secondary alignment.
In general, a plurality of film forming chambers are provided in one film forming cluster, but since both primary alignment and secondary alignment are performed in each film forming chamber, there is a problem that the alignment process takes a considerable time and the tact time (tact time) increases.
Patent document 1 (japanese patent application laid-open No. 2019-192898) proposes a technique in which, in an electronic device manufacturing apparatus, an alignment process is performed in an alignment chamber of a relay device before a substrate is sent from the relay device to a film formation cluster.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2019-192898
Disclosure of Invention
Problems to be solved by the invention
However, in the conventional electronic device manufacturing apparatus, since the substrate is cooled after being placed on the substrate stage in the film forming chamber, the time taken for cooling is long, which causes an increase in tact time. Further, in order to shorten the cooling time, the cooling mechanism needs to be increased in size, but the increase in size of the cooling mechanism is limited because the space of the film forming chamber is limited.
In addition, in patent document 1, since the substrate is also transferred to the film forming chamber through the transfer chamber after being aligned in the alignment chamber, the substrate may be displaced during the transfer in the transfer chamber.
The invention aims to provide a film forming device which can reduce the cooling time of a substrate in a film forming chamber, reduce the time spent on alignment, inhibit the increase of takt time and save the space of the film forming chamber.
Means for solving the problems
A film forming apparatus according to an embodiment of the present invention includes: a film forming chamber for forming a film on a substrate; and a transfer chamber having a transfer member for transferring the substrate to the film forming chamber, wherein the transfer chamber includes a substrate cooling unit for cooling the substrate.
A film deposition apparatus according to an embodiment of the present invention is a film deposition apparatus that transports a substrate in order of a 1 st relay chamber, a transport chamber, a film deposition chamber, and a 2 nd relay chamber, wherein the transport chamber includes: a container; a substrate cooling unit disposed in the container and configured to cool the substrate; and a transport member disposed in the container and configured to hold and transport the substrate, wherein the film forming apparatus includes the transport chamber and a transport control unit configured to control the transport member, and the transport control unit is configured to control the transport member so as to transport the substrate, which is sent into the container from the 1 st relay chamber, to the substrate cooling unit and then to the film forming chamber.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, the tact time can be shortened and the productivity can be improved. In addition, the space of the film forming chamber can be saved.
Drawings
Fig. 1 is a schematic view of a part of an apparatus for manufacturing an electronic device.
FIG. 2 is a schematic view showing the structure of a film forming apparatus.
Fig. 3 is a schematic view of a substrate transport system according to an embodiment of the present invention.
Fig. 4 (a) is a plan view and a cross-sectional view schematically showing an example of a cooling plate provided in a substrate cooling unit of the substrate transport system of fig. 3. Fig. 4 (b) is a plan view and a cross-sectional view schematically showing another example of the cooling plate provided in the substrate cooling unit of the substrate transport system of fig. 3.
Fig. 5A is a schematic view of a substrate transport system according to another embodiment of the present invention.
Fig. 5B is a schematic view of a substrate transport system according to another embodiment of the present invention.
Fig. 6A is a diagram schematically showing a transport path of a substrate in the substrate transport system of fig. 3.
Fig. 6B is a diagram schematically showing a conveyance path of a substrate in the substrate conveyance system of fig. 5A.
Fig. 6C is a diagram schematically showing a substrate conveyance path in the substrate conveyance system of fig. 5B.
Description of the reference numerals
11. 11a, 11 b: film forming chamber or film forming apparatus, 13a, 13 b: transport chamber or transport device, 14, 132: conveying robot, 15: passage chamber, 16: buffer chamber, 131: container, 133a, 133 b: substrate cooling section, 134: conveyance control units, 135a, 135 b: an alignment portion.
Detailed Description
Preferred embodiments and examples of the present invention are described below with reference to the drawings. However, the following embodiments and examples are merely illustrative of preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In the following description, unless otherwise specified, the hardware configuration, software configuration, process flow, manufacturing conditions, dimensions, materials, shapes, and the like of the apparatus are not intended to limit the scope of the present invention to these.
The present invention can be applied to an apparatus for depositing various materials on the surface of a substrate to form a film, and can be preferably applied to an apparatus for forming a thin film (material layer) having a desired pattern by vacuum deposition. As a material of the substrate, any material such as glass, a film of a polymer material, metal, silicon, or the like can be selected, and the substrate may be, for example, a substrate in which a film of polyimide or the like is laminated on a glass substrate, or a silicon wafer. As the vapor deposition material, any material such as an organic material or a metallic material (metal, metal oxide, or the like) may be selected. The present invention is applicable to a film deposition apparatus including a sputtering apparatus and a cvd (chemical Vapor deposition) apparatus, in addition to the vacuum deposition apparatus described in the following description. Specifically, the technique of the present invention can be applied to manufacturing apparatuses for organic electronic devices (e.g., organic EL elements, thin-film solar cells), optical components, and the like. Among these, an apparatus for manufacturing an organic EL element, in which an organic EL element is formed by evaporating an evaporation material and depositing the evaporation material on a substrate through a mask, is one of preferable application examples of the present invention.
< apparatus for manufacturing electronic device >
Fig. 1 is a plan view schematically showing a part of the structure of an apparatus for manufacturing an electronic device.
The manufacturing apparatus of fig. 1 is used for manufacturing a display panel of an organic EL display device, for example. In the case of a display panel for VR HMD, after a film is formed on a silicon wafer of a predetermined size for forming organic EL elements, the silicon wafer is cut along a region between element forming regions (scribe region) to produce a plurality of small-sized panels. In the case of a display panel for a smartphone, a plurality of small-sized panels are produced by cutting a substrate of the 4.5 th generation (about 700mm × about 900mm), a substrate of the 6 th generation (about 1500mm × about 1850mm), or a substrate of the half-cut size (about 1500mm × about 925mm) after film formation for forming an organic EL element.
The manufacturing apparatus of electronic devices generally includes a plurality of cluster apparatuses 1 and a relay apparatus connecting the cluster apparatuses.
The cluster apparatus 1 as a film deposition system includes a plurality of film deposition apparatuses 11 or film deposition chambers for processing (for example, film deposition) a substrate W, a plurality of mask stockers 12 for storing masks M before and after use, and a transfer chamber 13 or transfer apparatus arranged at the center thereof. As shown in fig. 1, the transfer chamber 13 is connected to each of the plurality of film forming apparatuses 11 and the mask stocker 12.
A transfer robot 14 for transferring a substrate or a mask is disposed in the transfer chamber 13. The transfer robot 14 transfers the substrate W to the film deposition apparatus 11 from the passage chamber 15 of the relay apparatus disposed on the upstream side. The transfer robot 14 transfers the mask M between the film deposition apparatus 11 and the mask stocker 12. The transfer robot 14 is a robot having a structure in which a robot hand holding the substrate W or the mask M is attached to an articulated arm, for example.
According to the embodiment of the present invention, the substrate W fed from the passage chamber 15 is cooled by a cooling mechanism (not shown) provided in the transfer chamber 13 before being fed to the film deposition apparatus 11. Further, the alignment process (e.g., primary alignment) of the substrate W may be performed before the substrate W cooled by the cooling mechanism is fed to the film deposition apparatus 11. The details of the cooling process and the alignment process of the substrate W performed in the transfer chamber 13 and the devices (substrate cooling unit and alignment unit) used for these processes will be described later.
In the film forming apparatus 11 (also referred to as a vapor deposition apparatus), a vapor deposition material stored in an evaporation source is heated by a heater to be evaporated, and is deposited on the substrate W through the mask M. A series of film formation processes such as transfer of the substrate W to the mask M by the transfer robot 14, adjustment (alignment) of the relative position between the substrate W and the mask M, fixing of the substrate W to the mask M, and film formation (vapor deposition) are performed by the film formation device 11.
In the mask stocker 12, a new mask to be used in a film forming process of the film forming apparatus 11 and an existing mask are stored in two cassettes separately. The transfer robot 14 transfers a used mask from the film deposition apparatus 11 to the cassette of the mask stocker 12, and transfers a new mask stored in another cassette of the mask stocker 12 to the film deposition apparatus 11.
A passage chamber 15 and a buffer chamber 16 are connected to the cluster apparatus 1, the passage chamber 15 transferring the substrate W from the upstream side in the flow direction of the substrate W to the cluster apparatus 1, and the buffer chamber 16 transferring the substrate W having completed the film forming process in the cluster apparatus 1 to another cluster apparatus on the downstream side. According to the embodiment, the passage chamber for transferring the substrate W to the cluster apparatus on the downstream side may be directly connected to the cluster apparatus 1 instead of the buffer chamber 16. The transfer robot 14 of the transfer chamber 13 receives the substrate W from the upstream passage chamber 15 and transfers the substrate W to one of the film deposition apparatuses 11 (e.g., the film deposition apparatus 11a) in the cluster apparatus 1. The transfer robot 14 receives the substrate W on which the film formation process in the cluster apparatus 1 has been completed from one of the plurality of film formation apparatuses 11 (e.g., the film formation apparatus 11b), and transfers the substrate W to the buffer chamber 16 or the passage chamber connected to the downstream side.
A whirling chamber 17 for changing the orientation of the substrate may be provided between the buffer chamber 16 and the passage chamber 15. The whirling chamber 17 is provided with a transfer robot 18 for receiving the substrate W from the buffer chamber 16, rotating the substrate W by 180 °, and transferring the substrate W to the passage chamber 15. This makes the orientation of the substrate W uniform between the upstream cluster device and the downstream cluster device, thereby facilitating substrate processing.
The passage chamber 15, the buffer chamber 16, and the swirling chamber 17 are so-called relay devices that connect the cluster devices, and the relay devices provided on the upstream side and/or the downstream side of the cluster devices include at least 1 of the passage chamber, the buffer chamber, and the swirling chamber.
The film forming apparatus 11, the mask stocker 12, the transfer chamber 13, the buffer chamber 16, the whirling chamber 17, and the like are maintained in a high vacuum state during the process of manufacturing the organic light emitting element. The passage chamber 15 is normally maintained in a low vacuum state, but may be maintained in a high vacuum state if necessary.
In this embodiment, the configuration of the apparatus for manufacturing an electronic device is described with reference to fig. 1, but the present invention is not limited to this, and other types of apparatuses and chambers may be provided, and the arrangement between these apparatuses and chambers may be changed. For example, the present invention can also be applied to an inline manufacturing apparatus: the substrate W and the mask M are joined (bonded) not in the film formation device 11 but in a separate device or chamber, and then placed on a carrier, and the film formation process is performed while being conveyed by a plurality of film formation devices arranged in a line.
The manufacturing apparatus of the electronic device includes a control unit (not shown). The control unit controls the transfer of the substrate W in the relay devices 15 and 16, the transfer of the substrate between the relay devices 15 and 16 and the transfer chamber 13, and the like. The control unit has a control function of controlling the transfer of the substrate W between the transfer chamber 13 and the film deposition apparatus 11 and controlling the cooling, alignment, and the like of the substrate W in the transfer chamber 13 in the film deposition cluster, which will be described in detail later.
The following describes a specific configuration of the film formation apparatus 11.
< film Forming apparatus >
Fig. 2 is a schematic diagram showing the structure of the film formation apparatus 11. In the following description, an XYZ rectangular coordinate system is used in which 2 directions intersecting a plane (XY plane) parallel to the film formation surface of the substrate W are defined as an X direction (1 st direction) and a Y direction (2 nd direction), and a vertical direction perpendicular to the film formation surface of the substrate W is defined as a Z direction (3 rd direction). The rotation angle (rotation direction) around the Z axis is represented by θ.
The film forming apparatus 11 includes: a vacuum chamber 21 maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas; a substrate support unit 22 provided inside the vacuum chamber 21; a mask supporting unit 23; an electrostatic chuck 24; and an evaporation source 25.
The substrate support unit 22 is a member that receives and holds the substrate W conveyed by the conveyance robot 14 provided in the conveyance chamber 13, and is also referred to as a substrate holder.
The mask support unit 23 is a member that receives and holds the mask M conveyed by the conveyance robot 14 provided in the conveyance chamber 13, and is also referred to as a mask holder.
The mask M has an opening pattern corresponding to a thin film pattern to be formed on the substrate W, and is supported by the mask support unit 23. The mask M may be made of a metal, or may be made of a light-transmitting material such as silicon or glass.
An electrostatic chuck 24 as a substrate attracting member for attracting and fixing the substrate W is provided above the substrate supporting unit 22. The electrostatic chuck 24 may be a coulomb force type electrostatic chuck in which a dielectric having a relatively high resistance is interposed between the electrode and the suction surface and is attracted by a coulomb force between the electrode and the object, a johnson-rahbek force type electrostatic chuck in which a dielectric having a relatively low resistance is interposed between the electrode and the suction surface and is attracted by johnson-rahbek force generated between the suction surface of the dielectric and the object, or a gradient force type electrostatic chuck in which the object is attracted by an uneven electric field.
When the object to be attracted is a conductor or a semiconductor (silicon wafer), a coulomb force type electrostatic chuck or a johnson-rabickforce type electrostatic chuck is preferably used, and when the object to be attracted is an insulator such as glass, a gradient force type electrostatic chuck is preferably used.
The electrostatic chuck 24 may be formed of one plate, or may be formed to have a plurality of sub-plates capable of independently controlling the suction force. In the case of forming the electrode portion by one plate, a plurality of electrode portions may be provided inside the plate so that the suction force can be controlled independently for each electrode portion in one plate.
As the substrate suction member, an adhesive pad using an adhesive force may be used in addition to an electrostatic chuck using an electrostatic attraction force.
According to the embodiment of the present invention, the electrostatic chuck 24 may not be provided with a cooling plate for suppressing the temperature rise of the substrate W. As described above, the substrate W is cooled by the cooling mechanism (substrate cooling unit) provided in the transport chamber 13 while waiting in the transport chamber 13 before being carried into the film deposition apparatus 11, and therefore, the substrate W may not be cooled while the film deposition process is performed in the film deposition apparatus 11. This simplifies the structure of the film deposition apparatus 11, and saves space in the film deposition apparatus 11.
Alternatively, as shown in the drawing, the cooling plate 30 for suppressing the temperature rise of the substrate W may be provided on the opposite side of the suction surface of the electrostatic chuck 24 to suppress the deterioration or degradation of the organic material deposited on the substrate W. In this case, since the substrate W is once cooled in the transfer chamber 13, even if the size of the cooling plate 30 is reduced, the temperature of the substrate W can be maintained low during the film formation process, and deterioration of the organic material can be prevented.
The evaporation source 25 includes a crucible (not shown) for storing a vapor deposition material to be formed on a substrate, a heater (not shown) for heating the crucible, a shutter (not shown) for preventing the vapor deposition material from scattering toward the substrate until an evaporation rate from the evaporation source becomes constant, and the like. The evaporation source 25 can have various configurations depending on the application, such as a point (point) evaporation source, a linear (linear) evaporation source, a planar evaporation source, and the like.
Although not shown in fig. 2, the film forming apparatus 11 includes a film thickness monitor (not shown) for measuring the thickness of a film deposited on a substrate and a film thickness calculating unit (not shown).
A substrate support unit actuator 26, a mask support unit actuator 27, an electrostatic chuck actuator 28, a position adjustment mechanism 29, and the like are provided on the upper outer side (atmosphere side) of the vacuum chamber 21. These actuators and position adjusting mechanisms are constituted by, for example, a motor and a ball screw, or a motor and a linear guide. The substrate support unit actuator 26 is a driving member for raising and lowering (moving in the Z direction) the substrate support unit 22. The mask supporting unit actuator 27 is a driving member for raising and lowering (moving in the Z direction) the mask supporting unit 23. The electrostatic chuck actuator 28 is a driving member for moving the electrostatic chuck 24 up and down (Z-direction movement).
The position adjustment mechanism 29 is an alignment stage mechanism as a means for adjusting the relative position of the substrate W and the mask M. For example, in the embodiment shown in fig. 2, the position adjustment mechanism 29 moves and/or rotates the entire electrostatic chuck 24 or the electrostatic chuck actuator 28 in the XY θ direction (at least one of the X direction, the Y direction, and the rotation direction) with respect to the substrate supporting unit 22 and the mask supporting unit 23. In the present embodiment, alignment is performed in which the relative position of the substrate W and the mask M is adjusted by adjusting the position of the electrostatic chuck 24 in the XY θ direction in a state where the substrate W is adsorbed. However, the present invention is not limited to such a configuration, and for example, the position adjustment mechanism 29 may have a configuration that can move the substrate support unit 22 or the substrate support unit actuator 26 and the mask support unit 23 or the mask support unit actuator 27 relative to the electrostatic chuck 24 in the XY θ direction without moving the electrostatic chuck 24 or the electrostatic chuck actuator 28 relative to each other.
An alignment camera 31 is provided on the outer upper surface of the vacuum chamber 21 in addition to the above-described driving mechanism and position adjusting mechanism, and the alignment camera 31 is configured to take an image of an alignment mark formed on the substrate W and the mask M through a transparent window provided on the upper surface of the vacuum chamber 21. The alignment camera 31 is provided at a position corresponding to an alignment mark formed on the substrate W and the mask M. For example, the alignment cameras 31 may be provided at 2 or all 4 corners of at least two opposite corners of 4 corners forming a rectangle on the circular substrate W.
Although not shown in fig. 2, the film deposition apparatus 11 may further include an illumination light source for illuminating the alignment mark in order to image the alignment mark with the alignment camera 31. Since the inside of the vacuum chamber 21 sealed in the film forming step is dark, the alignment mark is illuminated by the light source, and a clearer image can be obtained. Therefore, the light source is preferably coaxial illumination, but is not limited thereto. The light source may be provided on the upper side of the outside of the vacuum chamber 21 to irradiate the alignment mark from above, or may be provided inside the vacuum chamber 21 to irradiate the alignment mark from below.
The film deposition apparatus 11 includes a control unit. The control unit has functions of carrying and aligning the substrate W/mask M, controlling the evaporation source 25, controlling film formation, and the like. The control unit may be provided independently for each of the film forming apparatuses 11, may be provided integrally with a plurality of film forming apparatuses 11, or may be implemented as one functional unit of a control unit of an electronic device manufacturing apparatus.
The control unit may be constituted by a computer having a processor, a memory, a storage, an I/O, and the like, for example. In this case, the function of the control unit 33 is realized by the processor executing a program stored in the memory or the storage. As the computer, a general-purpose personal computer may be used, or an embedded computer or a plc (programmable logic controller) may be used. Alternatively, a part or all of the functions of the control unit may be constituted by circuits such as ASICs and FPGAs.
< substrate transport System >
Fig. 3 is a schematic diagram showing a configuration of a substrate transport system according to an embodiment of the present invention. The substrate transfer system is used to transfer the substrates W from the passage chamber (the 1 st relay device 15, the 1 st relay chamber) to the transfer device 13, from the transfer device 13 (transfer chamber) to the film forming device 11 (film forming chamber), and then from the film forming device 11 to the buffer chamber (the 2 nd relay device 16, the 2 nd relay chamber) in order. As described above with reference to fig. 1, the buffer chamber 16 may be a passage chamber or other relay device depending on the manner of mounting the electronic device manufacturing apparatus.
In the substrate transport system according to the present embodiment, the transport of the substrate W in the transport device 13 is controlled so that the substrate W is cooled in advance in the transport device 13 while the substrate W carried into the transport device 13 is waiting until the substrate W is transported to the film deposition device 11 where the film deposition process is performed. In the substrate transport system according to the present embodiment, the transport of the substrate W in the transport device 13 may be controlled so that the substrate W is aligned in advance in the transport device 13 before the substrate W loaded into the transport device 13 is transported to the film deposition device 11.
According to the present embodiment, since the transport device 13 is cooled in advance, the film formation device 11 does not need cooling or can shorten the cooling time, and thus the time taken for the entire film formation process can be shortened. Further, the cooling member for the substrate W (e.g., the cooling plate 30 provided on the electrostatic chuck 24) provided in the film deposition apparatus 11 can be made compact or small. Further, by adjusting the position of the substrate W to be fed into the film formation device 11 in advance in the transport device 13, it is possible to ensure highly accurate position adjustment in the film formation device 11 even if only the secondary alignment process is performed without the primary alignment process, and it is possible to greatly reduce the overall time required for the alignment process.
Therefore, the substrate transport system of the present embodiment includes: a transfer device 13 that transfers the substrate W loaded from the passage chamber (1 st relay device 15) to the film deposition device 11, and transfers the substrate W having completed the film deposition process from the film deposition device 11 to the buffer chamber (2 nd relay device 16); and a conveyance control unit 134 that controls conveyance of the substrate W by the conveyance device 13. The transfer device 13 includes a container 131, a transfer robot 132 provided in the container 131, and a substrate cooling unit 133.
The inside of the container 131 is maintained in a vacuum state, preferably in a high vacuum state. The containers 131 are disposed in the passage chamber 15 adjacent to the buffer chamber 16 and the respective containers of the film forming apparatus 11, and are connected to each other. Although the embodiment including 2 film forming apparatuses 11 is shown in the figure, this is merely illustrative and 1 or 2 or more film forming apparatuses may be provided. Although not shown in the drawings, a container of a reticle stocker may be connected to the container 131.
The transfer robot 132 is disposed in the container 131, transfers the substrate W between the transport device 13 and the film deposition apparatus 11 and the inside of the container 131 of the transport device 13, and includes a mechanism for receiving the substrate W from the passage chamber 15 and for sending the substrate W to the buffer chamber 16. The transfer robot 132 is a robot having a structure in which a robot hand holding the substrate W or the mask M is attached to an articulated arm, for example. In this case, the multi-joint arm of the transfer robot 132 transfers the substrate W while performing the expansion and contraction operation in the XY direction and performing the swing operation with the Z-axis direction as an axis. According to the embodiment, the transfer robot 132 may be movable up and down in the Z-axis direction.
The substrate cooling unit 133 is a mechanism for cooling the substrate W fed from the passage chamber 15 into the container 131 before being conveyed to the film deposition apparatus 11. In general, in the film deposition apparatus 11, since it takes a long time to perform the alignment step and the film deposition step, the substrate W fed from the passage chamber 15 to the transfer apparatus 13 is kept standing in the container 131 for a predetermined time. According to the present embodiment, the substrate cooling unit 133 is provided in the container 131, so that the substrate W is cooled while waiting in the container 131. As described above, in the present embodiment, since the cooling is performed using the standby time, it is not necessary to additionally provide a time for cooling the substrate W by the substrate cooling unit 133, compared to the conventional case.
The position where the substrate cooling unit 133 is disposed is not particularly limited, and may be appropriately disposed in an empty space in the container 131. For example, when the substrate cooling unit 133 is disposed on the transport path of the substrate W from the passage chamber 15 to the film deposition apparatus 11 in the container 131, the transport path from the passage chamber 15 to the film deposition apparatus 11 can be minimized.
One or more substrate cooling units 133 may be disposed in the container 131. For example, as shown in the figure, the substrate cooling units 133 are preferably arranged in the same number as the number (2) of the film deposition apparatuses 11 connected to the container 131. For example, if the number of the film deposition apparatuses 11 (film deposition chambers) is N (N is an integer of 2 or more), the number of the substrate cooling units 133 may be N. Thus, the film deposition devices 11 correspond to the substrate cooling units 133 one-to-one (that is, the 1 st film deposition device 11a corresponds to the 1 st substrate cooling unit 133a, and the 2 nd film deposition device 11b corresponds to the 2 nd substrate cooling unit 133 b), and therefore, the cooling time by the substrate cooling unit 133 can be secured to the maximum extent for each substrate W. However, the present invention is not limited to this, and the number of substrate cooling units 133 may be smaller than the number of film deposition apparatuses 11.
Each of the plurality of substrate cooling units 133 is preferably provided to be able to move up and down in a turning area of the transfer robot 132 in the container 131. Thus, even if the transfer robot 132 rotates within the container 131 about the Z-axis direction (i.e., the direction perpendicular to the substrate supporting surface of the substrate cooling unit 133), the collision with the transfer robot 132 can be avoided by lowering (in the case of a face-up mechanism described later) or raising (in the case of a face-down mechanism described later) the substrate cooling unit 133. As a result, even if a plurality of substrate cooling units 133 are provided in the container 131, the operation of the transfer robot 132 is not limited thereto.
The manner in which the substrate cooling unit 133 cools the substrate W is not particularly limited. For example, the substrate cooling unit 133 may be a water-cooled mechanism using cooling water, or may be an air-cooled mechanism using a gas such as air.
According to one embodiment, the water-cooled substrate cooling unit 133 may be a face-up type mechanism that supports the bottom surface (lower surface) of the substrate W and cools the substrate W. For example, the substrate cooling unit 133 may include a predetermined support structure provided on the bottom surface of the container 131 and a cooling plate provided above the support structure.
Fig. 4 (a) and 4 (b) are a plan view and a cross-sectional view schematically showing an example of a cooling plate provided in the substrate cooling unit 133 of the face-up type, respectively. As shown IN fig. 4 (a), the cooling plate may be configured such that, IN the plate-shaped member, the cooling water flowing into the Inlet (IN) flows along a cooling water channel integrally formed IN the plate-shaped member and is discharged from the Outlet (OUT). As shown IN fig. 4 (b), the cooling plate may have a structure IN which an Inlet (IN) for cooling water is formed on one side of a plate-shaped member having a hollow center portion, and an Outlet (OUT) is formed on the other side. IN this case, the Inlet (IN) is preferably formed to have a height close to the bottom surface of the plate-like member, and the Outlet (OUT) is preferably formed to have a height close to the upper surface of the plate-like member, so that the cooling water having a relatively low temperature flows into the central portion and the cooling water having a relatively high temperature flows OUT from the central portion.
According to another embodiment, the water-cooled substrate cooling unit 133 may be a face-down type mechanism that cools the upper surface of the substrate W while adsorbing and holding the upper surface. For example, the substrate cooling unit 133 includes an electrostatic chuck for attracting and holding the substrate W, and a cooling mechanism such as a cooling plate coupled to the electrostatic chuck. Alternatively, a substrate attracting member of another type, such as an adhesive pad, may be used instead of the electrostatic chuck to attract and hold the upper surface of the substrate W.
The conveyance controller 134 controls the conveyance operation of the substrate W by the conveyance robot 132. The conveyance control unit 134 basically controls the conveyance robot 132 to receive the substrate W fed from the passage chamber 15 of the relay apparatus disposed on the upstream side, convey the substrate W to the film deposition apparatus 11, and thereafter convey the substrate W having completed the film deposition process in the film deposition apparatus 11 to the buffer chamber 16 of the relay apparatus disposed on the downstream side. Further, according to the present embodiment, the conveyance controller 134 controls the conveyance robot 132 to convey the substrate W to the substrate cooling unit 133 before conveying the substrate W to the film deposition apparatus 11. A specific transport path of the substrate W formed by the control of the transport control unit 134 will be described later.
The conveyance control unit 134 may be implemented as a processor of a computer separately provided to the conveyance robot 132 to control the operation of the conveyance robot 132. Alternatively, the conveyance controller 134 may be realized as a functional unit of a controller that controls the conveyance device 13, or may be realized as a functional unit of a controller of a film formation system or an electronic device manufacturing apparatus that includes the conveyance device 13.
Fig. 5A and 5B are schematic views each showing a configuration of a substrate transport system according to another embodiment of the present invention. Referring to fig. 5A and 5B, the substrate transport system of the present embodiment includes transport devices 13a and 13B and a transport control unit 134, and the transport devices 13a and 13B include a container 131, a transport robot 132 provided in the container 131, and a substrate cooling unit 133, which are the same as the substrate transport system of the embodiment shown in fig. 3. However, the substrate transport system according to the present embodiment is different from the substrate transport system according to the embodiment shown in fig. 3 in that the substrate transport system further includes the alignment portion 135 provided in the container 13, and thus the alignment portion 135 is included in the transport path of the substrate W formed by the control of the transport control portion 134. Hereinafter, only differences from the substrate transport system according to the embodiment shown in fig. 3 will be described.
The alignment unit 135 is used to adjust the position of the substrate W loaded into the container 131, and more precisely, the position of the substrate W cooled by the substrate cooling unit 133. More specifically, the alignment unit 135 adjusts the position of the substrate W with respect to a predetermined reference (e.g., a reference mark) provided at a specific position in the container 131, and a specific mounting method thereof is not particularly limited.
For example, the alignment unit 135 may include a substrate table on which the substrate W is placed in the container 131, an alignment mechanism for performing alignment of the substrate W, and a control unit for controlling the operation of the alignment mechanism. The alignment mechanism can include: a position information acquiring means (for example, an alignment camera) for acquiring information (information indicating a position of the substrate W with respect to the container 131) on a position where the substrate W is placed on the substrate stage; and a substrate table driving mechanism (XY θ actuator) for driving the substrate table in the X-axis direction, the Y-axis direction, and the θ direction. The substrate stage is connected to an XY θ actuator via a shaft.
The alignment portion 135 may be disposed at least one in the container 131, similarly to the substrate cooling portion 133. For example, as shown in fig. 5A, the alignment unit 135 may be arranged to be smaller (1 arrangement) than the number (2) of the film forming apparatuses 11 connected to the container 131. In this case, even the substrates W cooled by being conveyed to the different substrate cooling units 133a and 133b as described later are conveyed to the same alignment unit 135 to be aligned. Alternatively, as shown in fig. 5B, the alignment portions 135a and 135B may be arranged in the same number (2) as the number (2) of the film forming apparatuses 11 connected to the container 131. For example, if the number of the film forming apparatuses 11 (film forming chambers) is N (N is an integer of 2 or more), the number of the alignment portions 135 may be N. Thus, the film forming apparatuses 11a and 11b, the substrate cooling units 133a and 133b, and the alignment units 135a and 135b correspond to one another (that is, the 1 st film forming apparatus 11a, the 1 st substrate cooling unit 133, and the 1 st alignment unit 135a correspond to one another, and the 2 nd film forming apparatus 11b, the 2 nd substrate cooling unit 133b, and the 2 nd alignment unit 135b correspond to one another), and therefore, the cooling time by the substrate cooling unit 133 and the alignment time by the alignment unit 135 can be secured to the maximum for each substrate W.
The alignment unit 135 is also preferably provided to be able to move up and down in the container 131, similarly to the substrate cooling unit 133. Thus, even if the transfer robot 132 rotates within the container 131 about the Z-axis direction (i.e., the direction perpendicular to the substrate support surface of the alignment portion 135), the alignment portion 135 can be lowered and/or raised to avoid collision with the transfer robot 132. As a result, even if the alignment section 135 is provided in the container 131, the operation of the transfer robot 132 is not limited thereto.
Further, according to the present embodiment, the conveyance controller 134 controls the conveyance robot 132 to convey the substrates W sent to the conveyers 13a and 13B to the substrate cooling unit 133 and the alignment unit (135, see fig. 5A and 5B) in this order before conveying the substrates W to the film deposition apparatus 11. A specific transport path of the substrate W formed by the control of the transport control unit 134 will be described later.
< transfer route of substrate W in substrate transfer System >
Fig. 6A, 6B, and 6C are views schematically showing the conveyance path of the substrate W in the substrate conveyance system shown in fig. 3, 5A, and 5B, respectively. As described above, the conveyance control unit 134 controls the operation of the conveyance robot 132 to control the conveyance path of the substrate W.
Referring to fig. 6A, the first substrate W1 fed from the passage chamber 15 into the container 131 of the transfer device 13 is first transferred to the 1 st substrate cooling unit 133 a. Then, the substrate W1 is cooled by the 1 st substrate cooling unit 133a for a predetermined time and then conveyed to the 1 st film forming apparatus 11 a. In the 1 st film deposition apparatus 11a, a film deposition process is performed on the substrate W1, and the substrate W1 having completed the film deposition process is sent out to the buffer chamber 16.
Then, the second substrate W2 fed from the passage chamber 15 into the container 131 of the transfer device 13 is transferred to the 2 nd substrate cooling unit 133 b. At this time, the 1 st substrate W1 may be subjected to the cooling step in the 1 st substrate cooling unit 133a or the film forming step in the 1 st film forming apparatus 11 a. The substrate W2 is cooled by the 2 nd substrate cooling unit 133b for a predetermined time and then conveyed to the 2 nd film deposition apparatus 11 b. In the 2 nd film deposition apparatus 11b, a film deposition process is performed on the substrate W2, and the substrate W2 having completed the film deposition process is sent out to the buffer chamber 16.
Next, referring to fig. 6B, the first substrate W1 fed from the passage chamber 15 into the container 131 of the transfer device 13a is first transferred to the 1 st substrate cooling unit 133 a. Then, the substrate W1 is cooled by the 1 st substrate cooling unit 133a for a predetermined time and then conveyed to the alignment unit 135. After the alignment section 135 adjusts the position of the substrate W1, the substrate W1 is transported to the 1 st film forming apparatus 11 a. In the 1 st film deposition apparatus 11a, a film deposition process is performed on the substrate W1, and the substrate W1 having completed the film deposition process is sent out to the buffer chamber 16.
Then, the second substrate W2 fed from the passage chamber 15 into the container 131 of the transfer device 13a is transferred to the 2 nd substrate cooling unit 133 b. At this time, the 1 st substrate W1 may be subjected to the cooling process by the 1 st substrate cooling unit 133a, the alignment process by the alignment unit 135, or the film forming process by the 1 st film forming apparatus 11 a. The substrate W2 is conveyed to the alignment unit 135 after being cooled by the 2 nd substrate cooling unit 133b for a predetermined time. At this time, the 1 st substrate W1 may be undergoing the film forming process by the 1 st film forming apparatus 11 a. After the substrate W2 is transferred to the alignment portion 135, a third substrate W1 may be transferred from the passage chamber 15 to the 1 st substrate cooling portion 133 a. Subsequently, after the alignment unit 135 adjusts the position of the substrate W2, the substrate W2 is transported to the 2 nd film deposition apparatus 11 b. In the 2 nd film deposition apparatus 11b, a film deposition process is performed on the substrate W2, and the substrate W2 having completed the film deposition process is sent out to the buffer chamber 16.
Next, referring to fig. 6C, the first substrate W1 fed from the passage chamber 15 into the container 131 of the transfer device 13b is first transferred to the 1 st substrate cooling unit 133 a. Then, the substrate W1 is cooled by the 1 st substrate cooling unit 133a for a predetermined time and then conveyed to the 1 st alignment unit 135 a. After the position of the substrate W1 is adjusted by the 1 st alignment unit 135a, the substrate W1 is transported to the 1 st film forming apparatus 11 a. In the 1 st film deposition apparatus 11a, a film deposition process is performed on the substrate W1, and the substrate W1 having completed the film deposition process is sent out to the buffer chamber 16.
Then, the second substrate W2 fed from the passage chamber 15 into the container 131 of the transfer device 13b is transferred to the 2 nd substrate cooling unit 133 b. At this time, the 1 st substrate W1 may be subjected to the cooling process by the 1 st substrate cooling unit 133a, the alignment process by the 1 st alignment unit 135a, or the film forming process by the 1 st film forming apparatus 11 a. The substrate W2 is cooled by the 2 nd substrate cooling unit 133b for a predetermined time and then conveyed to the 2 nd alignment unit 135 b. At this time, the 1 st substrate W1 may be subjected to the alignment process in the 1 st alignment unit 135a or the film forming process in the 1 st film forming apparatus 11 a. After the substrate W2 is transferred to the 2 nd alignment unit 135b, a third substrate W1 may be transferred from the passage chamber 15 to the 1 st substrate cooling unit 133a, or a substrate W1 whose cooling is completed may be transferred to the 1 st alignment unit 135 a. Subsequently, after the 2 nd alignment unit 135b adjusts the position of the substrate W2, the substrate W2 is conveyed to the 2 nd film deposition apparatus 11 b. In the 2 nd film deposition apparatus 11b, a film deposition process is performed on the substrate W2, and the substrate W2 having completed the film deposition process is sent out to the buffer chamber 16.
The above embodiments are merely examples of the present invention, and the present invention is not limited to the configurations of the above embodiments, and may be modified as appropriate within the scope of the technical idea thereof.

Claims (16)

1. A film deposition apparatus includes:
a film forming chamber for forming a film on a substrate; and
a transfer chamber having a transfer means for transferring the substrate to the film forming chamber,
it is characterized in that the preparation method is characterized in that,
the transfer chamber includes a substrate cooling unit for cooling the substrate.
2. The film forming apparatus according to claim 1,
further comprising a control unit for controlling the operation of the film forming apparatus,
the control unit controls the transport member to transport the substrate to the substrate cooling unit to cool the substrate before transporting the substrate loaded into the transport chamber to the film forming chamber.
3. The film forming apparatus according to claim 2,
the transfer chamber further has an alignment portion for adjusting a position of the substrate.
4. The film forming apparatus according to claim 3,
the control unit controls the transport member to transport the substrate cooled by the substrate cooling unit to the alignment unit to adjust the position of the substrate before transporting the substrate to the film forming chamber.
5. The film forming apparatus according to claim 4,
the substrate cooling unit and the alignment unit are respectively provided so as to be movable up and down in a turning region through which the transfer member passes when rotating about an axis in a direction orthogonal to a substrate supporting surface of the substrate cooling unit.
6. The film forming apparatus according to claim 1,
the substrate cooling unit includes a cooling plate supporting a lower surface of the substrate and having a cooling water channel formed therein.
7. The film forming apparatus according to claim 1,
the substrate cooling section includes a substrate suction member for sucking and holding an upper surface of the substrate and a cooling mechanism coupled to the substrate suction member.
8. The film forming apparatus according to any one of claims 1 to 7,
comprises N film forming chambers, N is an integer of 2 or more,
the transfer chamber includes N substrate cooling units corresponding to the N film forming chambers one by one.
9. The film forming apparatus according to claim 8,
the transfer chamber includes 1 to N alignment portions for adjusting the position of the substrate.
10. A film forming apparatus which conveys a substrate in the order of a 1 st relay chamber, a conveying chamber, a film forming chamber, and a 2 nd relay chamber,
the transfer chamber includes: a container; a substrate cooling unit disposed in the container and configured to cool the substrate; and a transport member disposed in the container, for holding and transporting the substrate,
the film forming apparatus includes the transport chamber and a transport control unit that controls the transport member,
the transport control unit controls the transport member to transport the substrate loaded into the container from the 1 st relay chamber to the substrate cooling unit and then to the film forming chamber.
11. The film forming apparatus according to claim 10,
the transfer chamber further includes an alignment part provided in the container for adjusting a position of the substrate,
the transport control unit controls the transport member to transport the substrate cooled by the substrate cooling unit to the alignment unit before transporting the substrate to the film forming chamber.
12. The film forming apparatus according to claim 11,
the substrate cooling unit and the alignment unit are respectively provided so as to be movable up and down in a turning region through which the transfer member passes when rotating about an axis in a direction orthogonal to a substrate supporting surface of the substrate cooling unit.
13. The film forming apparatus according to claim 10,
the substrate cooling unit includes a cooling plate supporting a lower surface of the substrate and having a cooling water channel formed therein.
14. The film forming apparatus according to claim 10,
the substrate cooling section includes a substrate suction member for sucking and holding an upper surface of the substrate and a cooling mechanism coupled to the substrate suction member.
15. The film forming apparatus according to any one of claims 10 to 14,
comprises N film forming chambers, N is an integer of 2 or more,
the transfer chamber includes N substrate cooling units corresponding to the N film forming chambers one by one.
16. The film forming apparatus according to claim 15,
the transfer chamber includes 1 to N alignment portions for adjusting the position of the substrate.
CN202011542861.4A 2019-12-23 2020-12-23 Film forming apparatus Pending CN113088871A (en)

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