CN111434797A - Film forming apparatus and electronic device manufacturing apparatus - Google Patents

Film forming apparatus and electronic device manufacturing apparatus Download PDF

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Publication number
CN111434797A
CN111434797A CN201911161941.2A CN201911161941A CN111434797A CN 111434797 A CN111434797 A CN 111434797A CN 201911161941 A CN201911161941 A CN 201911161941A CN 111434797 A CN111434797 A CN 111434797A
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China
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film forming
substrate
forming apparatus
vacuum container
vacuum
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CN201911161941.2A
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CN111434797B (en
Inventor
铃木健太郎
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Canon Tokki Corp
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Canon Tokki Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering

Abstract

The invention provides a film forming apparatus and an electronic device manufacturing apparatus capable of improving film forming precision. A film forming apparatus (11) having a vacuum vessel (21), wherein the vacuum vessel (21) comprises: a plurality of vacuum container parts (a 1 st vacuum container part (211) and a 2 nd vacuum container part (212)); and a stretchable member (213) provided between the plurality of vacuum container portions (between the 1 st vacuum container portion (211) and the 2 nd vacuum container portion (212)).

Description

Film forming apparatus and electronic device manufacturing apparatus
Technical Field
The present invention relates to a film formation apparatus for forming a film of a film formation material on a substrate with a mask interposed therebetween, and an apparatus for manufacturing an electronic device including the film formation apparatus.
Background
The field of application of organic E L Display devices (organic E L displays) relates not only to smart phones, televisions, displays for automobiles, but also to VR-HMDs (Virtual Reality Head mounted displays) and the like.
In the manufacture of an organic E L display device (organic E L display), when forming an organic light-emitting element (organic E L element; O L ED) constituting an organic E L display device, an organic layer and a metal layer are formed by forming a film of a film-forming material discharged from a film-forming source of a film-forming device on a substrate through a mask on which a pixel pattern is formed.
In such a film forming apparatus, the film forming step is performed in a vacuum chamber maintaining a vacuum atmosphere or an inert gas atmosphere such as nitrogen. For example, in a film deposition apparatus of the top film deposition method (Depo-up), a film deposition source is provided at a lower portion of a vacuum chamber, and a substrate and a mask positioned with respect to the substrate are disposed at an upper portion of the vacuum chamber. Then, the film forming material discharged from the film forming source is deposited on the lower surface of the substrate through the opening formed in the mask, thereby forming a film.
In the film forming apparatus having such a film forming material scattering path, one of the factors affecting the film forming accuracy is the angle at which the scattered film forming material passes through the opening of the mask and enters the substrate. For example, if the angle at which the film forming material is incident on the substrate from the film forming source through the opening of the mask is increased, that is, if the film forming material is incident nearly perpendicular to the film forming surface of the substrate, the film forming accuracy can be improved. On the other hand, if the incident angle of the film forming material to the substrate is small, the film forming accuracy is reduced accordingly.
One method of increasing the angle at which the film forming material is incident on the film forming surface of the substrate is to extend the distance between the film forming source and the substrate.
However, if the distance between the film formation source and the substrate is increased, the height of the vacuum chamber of the film formation apparatus is increased in the case of the upper film formation system. When the height of the vacuum chamber is increased, the substrate, the mask, and various members supporting them provided on the upper side of the vacuum chamber are easily affected by vibration from the vacuum pump and the floor surface. This may cause a reduction in the alignment accuracy of the substrate with respect to the mask, and may cause a reduction in the film deposition accuracy as a result of the positional relationship between the substrate and the mask becoming unstable during the film deposition process.
Patent document 1: japanese laid-open patent publication No. 2012 and 033468
Disclosure of Invention
Problems to be solved by the invention
The invention aims to provide a film forming device capable of improving film forming precision and a manufacturing device of an electronic device comprising the film forming device.
Means for solving the problems
The present invention adopts the following means to solve the above problems.
That is, the film forming apparatus of the present invention is a film forming apparatus having a vacuum chamber,
the vacuum container includes a plurality of vacuum container portions and an extensible member provided between the plurality of vacuum container portions.
In addition, the manufacturing apparatus of the electronic device of the present invention is characterized in that,
the manufacturing device of the electronic device comprises:
the film forming apparatus;
a mask storage device for receiving a mask; and
a conveying device for conveying the substrate or the mask.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, the film forming accuracy can be improved.
Drawings
Fig. 1 is a schematic configuration diagram showing a part of an apparatus for manufacturing an electronic device according to an embodiment of the present invention.
Fig. 2 is a schematic cross-sectional view of a film deposition apparatus according to an embodiment of the present invention.
Fig. 3 is a schematic configuration diagram of a magnetic levitation table mechanism according to an embodiment of the present invention.
Fig. 4 is a schematic cross-sectional view of a magnetic levitation table mechanism according to an embodiment of the present invention.
Fig. 5 is a schematic configuration diagram of a magnetic levitation linear motor according to an embodiment of the present invention.
Fig. 6 is a schematic configuration diagram of a magnetic levitation linear motor according to an embodiment of the present invention.
Fig. 7 is a schematic cross-sectional view of the self-weight canceling mechanism according to the embodiment of the present invention.
Fig. 8 is a schematic cross-sectional view showing a vacuum vessel according to modification 1 of the present invention.
Fig. 9 is a schematic cross-sectional view showing a vacuum vessel according to modification 2 of the present invention.
Fig. 10 is a schematic cross-sectional view showing a vacuum vessel according to modification 3 of the present invention.
Description of the reference numerals
11. A film forming apparatus; 21. a vacuum vessel; 22. a magnetic levitation table mechanism; 23. a mask supporting unit; 24. a substrate adsorption member; 211. 1 st vacuum container part; 212. a 2 nd vacuum container part; 213. a retractable member.
Detailed Description
Preferred embodiments and examples of the present invention will be described below with reference to the accompanying drawings. However, the following embodiments and examples are illustrative of preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In the following description, the hardware configuration and software configuration of the apparatus, the process flow, the manufacturing conditions, the dimensions, the materials, the shapes, and the like are not intended to limit the scope of the present invention to these embodiments unless otherwise specified.
The present invention can be applied to an apparatus for depositing various materials on a surface of a substrate to form a film, and can be preferably applied to an apparatus for forming a thin film (material layer) having a desired pattern by vacuum deposition.
As a material of the substrate, any material such as a semiconductor (e.g., silicon), glass, a film of a polymer material, or a metal can be selected. As the substrate, for example, a substrate in which a film such as polyimide is laminated on a silicon wafer or a glass substrate can be used. As the film formation material, any material such as an organic material or a metallic material (metal, metal oxide, or the like) can be selected.
The present invention is not limited to a vacuum Deposition apparatus using thermal evaporation, and can be applied to various film forming apparatuses such as a sputtering apparatus and a CVD (Chemical Vapor Deposition) apparatus, and specifically, the technique of the present invention can be applied to various electronic devices such as a semiconductor device, a magnetic device, and an electronic component, and a manufacturing apparatus for an optical component.
[ manufacturing apparatus for electronic device ]
The overall configuration and the like of the electronic device manufacturing apparatus according to the present embodiment will be described with reference to fig. 1. Fig. 1 is a schematic configuration diagram showing a part of an apparatus for manufacturing an electronic device according to an embodiment of the present invention, and shows a schematic configuration of the apparatus for manufacturing an electronic device when viewed in a plan view.
In the case of a display panel for a VRHMD, for example, after film formation for forming organic E L elements on a silicon wafer of a predetermined size is performed, the silicon wafer is cut out along a region between element forming regions (scribe region) to produce a plurality of small-sized panels.
The manufacturing apparatus of the electronic device of the present embodiment generally includes a plurality of cluster apparatuses 1 and a relay apparatus for connecting the cluster apparatuses 1 to each other. The cluster apparatus 1 includes a film deposition device 11 that performs processing (e.g., film deposition) on a substrate W, a mask storage device 12 that stores masks M before and after use, and a transfer chamber 13 (transfer device) disposed at the center of the cluster apparatus 1. As shown in fig. 1, the transfer chamber 13 is connected to the film deposition apparatus 11 and the mask stocker 12, respectively.
A transfer robot 14 that transfers the substrate W and the mask M is disposed in the transfer chamber 13. The transfer robot 14 is a robot having a structure in which a robot hand for holding the substrate W or the mask M is attached to an articulated arm, for example.
In the film deposition apparatus 11, a film deposition material discharged from a film deposition source is deposited on a substrate W through a mask M. A series of film formation processes, such as transfer of the substrate W and the mask M by the transfer robot 14, adjustment (alignment) of the relative positions of the substrate W and the mask M, fixing of the substrate W to the mask, and film formation, are performed by the film formation device 11.
In the manufacturing apparatus of the organic E L display device, the film forming apparatus 11 can be classified into an organic film forming apparatus and a metal film forming apparatus according to the type of material to be formed, the organic film forming apparatus forms an organic film forming material on the substrate W by vapor deposition or sputtering, and the metal film forming apparatus forms a metallic film forming material on the substrate W by vapor deposition or sputtering.
In the manufacturing apparatus of the organic E L display device, which film forming apparatus is disposed at which position differs depending on the stacked structure of the manufactured organic E L element, and a plurality of film forming apparatuses for forming a film thereon are disposed depending on the stacked structure of the organic E L element.
In the case of an organic E L element, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode are generally stacked in this order on a substrate W on which an anode is formed, and a film formation device is appropriately disposed along the flow direction of the substrate so that these layers can be sequentially formed.
For example, in fig. 1, the film formation device 11a forms the hole injection layer HI L and/or the hole transport layer HT L, the film formation devices 11b and 11f form the blue light-emitting layer, the film formation device 11c forms the red light-emitting layer, the film formation devices 11d and 11e form the green light-emitting layer, the film formation device 11g forms the electron transport layer ET L and/or the electron injection layer EI L, and the film formation device 11h forms the cathode metal film, and the film formation devices are arranged such that the film formation rates of the blue light-emitting layer and the green light-emitting layer are slower than the film formation rate of the red light-emitting layer, and therefore, in order to balance the process rates, the blue light-emitting layer and the green light-emitting layer are formed by 2 film formation devices, respectively.
In the mask stocker 12, a new mask used in the film forming process by the film forming apparatus 11 and a used mask are stored in two cassettes separately. The transfer robot 14 transfers the used mask from the film forming apparatus 11 to the cassette of the mask stocker 12, and transfers a new mask stored in another cassette of the mask stocker 12 to the film forming apparatus 11.
The relay device connecting the plurality of cluster apparatuses 1 further includes a path chamber 15 for transferring the substrate W from one cluster apparatus 1 to another cluster apparatus 1.
The transfer robot 14 disposed in the transfer chamber 13 receives the substrate W from the upstream path chamber 15 and transfers the substrate W to one of the film deposition apparatuses 11 (e.g., the film deposition apparatus 11a) in the cluster apparatus 1. The transfer robot 14 receives the substrate W on which the film formation process has been completed in the cluster apparatus 1 from one of the plurality of film formation apparatuses 11 (for example, the film formation apparatus 11e), and transfers the substrate W to the passage chamber 15 connected to the downstream side.
The relay device may include a buffer chamber (not shown) for absorbing a difference in processing speed between the substrates W in the upstream cluster device 1 and the downstream cluster device 1, and a whirling chamber (not shown) for changing the direction of the substrates W, in addition to the path chamber 15. For example, the buffer chamber includes a substrate loading unit that temporarily stores a plurality of substrates W. The turning chamber is provided with a substrate turning mechanism (e.g., a rotary stage or a transfer robot) for turning the substrate W180 degrees. This makes it possible to make the directions of the substrates W identical between the upstream cluster apparatus and the downstream cluster apparatus, thereby facilitating the substrate processing.
The path chamber 15 may be provided with a substrate loading unit (not shown) for temporarily storing a plurality of substrates W and a substrate rotating mechanism. That is, the passage chamber 15 can also function as a buffer chamber and a swirl chamber.
The film formation apparatus 11, the mask stocker 12, the transfer chamber 13, and the like constituting the cluster apparatus 1 are maintained in a high vacuum state during the production of the organic light-emitting elements. The path chamber 15 of the relay device is normally maintained in a low vacuum state, but may be maintained in a high vacuum state as needed.
The substrate W on which the films of the plurality of layers constituting the organic E L element have been formed is conveyed to a sealing device (not shown) for sealing the organic E L element, a cutting device (not shown) for cutting the substrate into a predetermined panel size, and the like.
In the present embodiment, the apparatus for manufacturing an electronic device shown in fig. 1 has been described, but the present invention is not limited to this, and other types of apparatuses and chambers may be provided, and configurations in which the arrangement of these apparatuses and chambers is different may be adopted.
For example, the electronic device manufacturing apparatus of the present invention can be applied not only to the cluster type as shown in fig. 1 but also to the tandem type. In the case of a tandem-type electronic device manufacturing apparatus, a substrate W and a mask M are mounted on a carrier, and a film is formed while the substrate W and the mask M pass through a plurality of film forming apparatuses arranged in a line together with the carrier. The electronic device manufacturing apparatus of the present invention may have a structure in which a cluster type and a tandem type are combined. For example, the sealing step and the cutting step may be performed by a tandem-type manufacturing apparatus from the step of forming the electrode layer (cathode layer) in the cluster-type manufacturing apparatus before the organic layer is formed.
[ film Forming apparatus ]
The film deposition apparatus 11 according to the present embodiment will be described in more detail with reference to fig. 2. Fig. 2 is a schematic cross-sectional view of a film deposition apparatus according to an embodiment of the present invention. In the following description, an XYZ rectangular coordinate system is used in which the vertical direction is the Z direction and the horizontal plane (substrate surface at the time of film formation) is the XY plane. In addition, by θXRepresenting the angle of rotation about the X-axis by thetaYRepresenting the angle of rotation about the Y axis by thetaZIndicating the angle of rotation about the Z axis.
FIG. 2 shows a first film deposition apparatus 11 for depositing a film on a substrate W through a mask M by heating to evaporate or sublimate a film deposition materialFor example. The film forming apparatus 11 includes a vacuum container 21 maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen, and is disposed in the vacuum container 21 for forming a film at least in an X direction, a Y direction and a thetaZA magnetic levitation table mechanism 22 for adjusting the position of the substrate W in the direction, a mask support unit 23 provided in the vacuum chamber 21 for supporting the mask M, a substrate adsorbing member 24 provided in the vacuum chamber 21 for adsorbing and holding the substrate W, and a film forming source 25 for storing a film forming material, granulating the film forming material, and discharging the granulated film. Preferably, the film deposition apparatus 11 further includes a magnetic force applying member 26 for bringing the mask M into close contact with the substrate W by a magnetic force.
The vacuum chamber 21 in the film forming apparatus 11 of the present embodiment includes a plurality of vacuum chamber portions 211 and 212 (hereinafter, for convenience, may be referred to as a 1 st vacuum chamber portion 211 and a 2 nd vacuum chamber portion 212, respectively, as needed), and an extensible member 213 provided between the 1 st vacuum chamber portion 211 and the 2 nd vacuum chamber portion 212. In the example shown in fig. 2, the vacuum container 21 has a structure including two vacuum container portions 211 and 212, but the present invention is not limited to such a structure. The vacuum container of the present invention may have a structure including 3 or more vacuum container portions. Various modifications of the vacuum vessel 21 having a plurality of vacuum vessel portions will be exemplified later.
The vacuum chamber 21 shown in fig. 2 includes a 1 st vacuum chamber portion 211 forming a 1 st internal space in which the magnetic levitation table mechanism 22 is disposed, and a 2 nd vacuum chamber portion 212 forming a 2 nd internal space in which the film source 25 is disposed. In addition to the magnetic levitation table mechanism 22, the mask support unit 23 and the substrate suction member 24 can be disposed in the 1 st vacuum chamber portion 211. The 1 st internal space formed by the 1 st vacuum container portion 211 communicates with the 2 nd internal space formed by the 2 nd vacuum container portion 212, and the entire internal space of the vacuum container 21 is maintained in a high vacuum state by, for example, a vacuum pump (not shown) connected to the 2 nd vacuum container portion 212.
In addition, an extensible member 213 is provided at least between the 1 st vacuum chamber portion 211 and the 2 nd vacuum chamber portion 212. The stretchable member 213 functions to reduce the vibration from the vacuum pump connected to the 2 nd vacuum chamber portion 212 and the vibration from the floor or the floor where the film deposition apparatus 11 is installed from being transmitted to the 1 st vacuum chamber portion 211 through the 2 nd vacuum chamber portion 212. As the stretchable member 213, for example, a bellows can be used. However, the present invention is not limited to this, and other members may be used as long as the transmission of vibration between the 1 st vacuum container portion 211 and the 2 nd vacuum container portion 212 can be reduced.
The vacuum chamber 21 further includes a reference plate portion to which the magnetic levitation table mechanism 22 is connected. As shown in fig. 2, the reference plate portion includes, for example, a reference plate 214 connected to the magnetic levitation table mechanism 22 in a fixed state, and a reference plate support portion 215 for supporting the reference plate 214 at a predetermined height.
As shown in fig. 2, it is preferable that an extensible member 213 is further provided between the reference plate 214 and the 1 st vacuum chamber portion 211. This can further reduce the transmission of external vibration to the magnetic levitation table mechanism 22 via the reference plate 214.
Further, a vibration damping unit 216 is preferably provided between the reference plate supporting portion 215 of the reference plate portion and the installation table 217 of the film deposition apparatus 11. The vibration damping unit 216 plays a role of blocking or reducing transmission of vibration from a floor or the like on which the film deposition apparatus 11 is installed to the reference plate support portion 215 through the installation table 217 of the film deposition apparatus 11.
The structure of the vibration damping unit 216 of the present embodiment is not particularly limited. For example, the vibration damping means 216 may be a mechanism that absorbs vibration from the outside by using air pressure or hydraulic pressure, or a mechanism that absorbs vibration by using an elastic member such as a spring.
The magnetic levitation table mechanism 22 is an example of an alignment table mechanism for adjusting the position of the substrate W or the substrate suction member 24. The magnetic levitation table mechanism 22 of the present embodiment is a table mechanism for adjusting the position of the substrate W or the substrate adsorbing member 24 by a magnetic levitation linear motor, and includes at least X-direction, Y-direction, and θZDirection, preferably X direction, Y direction, Z direction, θXDirection, thetaYDirection, thetaZFor the substrate W or the substrate suction member 24 in the 6 directionsThe function of the location.
The magnetic levitation table mechanism 22 includes a table reference plate section 221 that functions as a fixed table, a fine motion table plate section 222 that functions as a movable table, and a magnetic levitation unit 223 that moves the fine motion table plate section 222 relative to the table reference plate section 221 while levitating it by magnetic force.
In the embodiment shown in fig. 2, the magnetic levitation table mechanism 22 is fixedly connected to the reference plate 214 which is a part of the vacuum chamber 21, but the present invention is not limited thereto, and the magnetic levitation table mechanism 22 may be provided so as to be fixed to a structure different from the vacuum chamber 21. For example, the reference plate portion to which the magnetic levitation table mechanism 22 is fixedly connected is a structure different from the ceiling portion of the vacuum vessel 21, and can be provided inside or outside the vacuum vessel 21 separately from the vacuum vessel 21.
The mask support unit 23 has a function of receiving the mask M conveyed by the conveying robot 14 provided in the conveying chamber 13 and holding the mask, and is also called a mask holder.
The mask support unit 23 is provided to be movable up and down at least in the vertical direction. This makes it possible to easily adjust the vertical distance between the substrate W and the mask M. In the case where the position of the substrate W is adjusted by the magnetic levitation table mechanism 22 as in the present embodiment, it is preferable that the mask support unit 23 for supporting the mask M is configured to be mechanically movable up and down by a motor (not shown) and a ball screw or a guide (not shown).
In addition, the mask support unit 23 may be configured to be horizontally (i.e., XY θ)ZDirection) of movement. In this case, even when the mask M is out of the field of view of the alignment camera, the mask M can be quickly moved into the field of view.
The mask support unit 23 further includes a mask picker 231, and the mask picker 231 is configured to temporarily receive the mask M loaded into the vacuum chamber 21 by the transfer robot 14. The mask pickup 231 is configured to be able to move up and down relative to the mask support surface of the mask support unit 23. For example, as shown in fig. 2, the mask picker 231 can be relatively lifted and lowered with respect to the mask supporting surface of the mask supporting unit 23 by the mask picker lifting mechanism 232. However, the present invention is not limited thereto, and the mask pickup 231 may have another structure as long as it can be moved up and down relative to the mask support surface of the mask support unit 23. For example, the mask pickup 231 may be fixed to the reference plate 214 or the stage reference plate section 221 of the magnetic levitation stage mechanism 22, and the mask support unit 23 may be configured to be movable up and down instead. Alternatively, both the mask picker 231 and the mask support unit 23 may be configured to be movable up and down.
The mask picker 231, which has received the mask M from the hand of the transfer robot 14, is lowered relative to the mask support surface of the mask support unit 23, and the mask M is lowered to the mask support surface of the mask support unit 23. Conversely, when the used mask M is carried out, the mask M is lifted from the mask support surface of the mask support unit 23, and the hand of the transfer robot 14 receives the mask M.
The Mask M has an aperture pattern corresponding to a thin film pattern formed on the substrate W and is supported by the Mask support unit 23, for example, as the Mask M for manufacturing an organic E L display panel for VR-HMD, a fine metal Mask (FineMetal Mask) which is a metal Mask in which fine aperture patterns corresponding to RGB pixel patterns of a light emitting layer of an organic E L element are formed and an open Mask (open Mask) for forming a common layer (a hole injection layer, a hole transport layer, an electron injection layer, and the like) of an organic E L element are used.
The substrate suction member 24 is an example of a substrate holding member for holding the substrate W, and has a function of sucking and holding the substrate W as a film formation object and a suction object. The substrate suction member 24 is fixed to a fine movement stage plate portion 222 as a movable stage in the magnetic levitation stage mechanism 22.
As the substrate suction member 24, for example, an electrostatic chuck having a structure in which a circuit such as a metal electrode is embedded in a matrix of a dielectric or an insulator (for example, a ceramic material) can be used.
As the electrostatic chuck of the substrate suction member 24, a coulomb force type electrostatic chuck can be used in which a dielectric having a relatively high resistance is interposed between the electrode and the suction surface, and the substrate is sucked by utilizing the coulomb force between the electrode and the object to be sucked. Further, as the electrostatic chuck, a dielectric having a relatively low electric resistance is interposed between the electrode and the suction surface, and the electrostatic chuck of the johnson rahback type in which the dielectric is sucked by the johnson rahbek force generated between the suction surface of the dielectric and the object to be sucked can be used. Further, as the electrostatic chuck, a gradient force type electrostatic chuck that adsorbs an object to be adsorbed by a non-uniform electric field can be used.
When the object to be attracted is a conductor or a semiconductor (silicon wafer), a coulomb force type electrostatic chuck or a johnson-rabickforce type electrostatic chuck is preferably used, and when the object to be attracted is an insulator such as glass, a gradient force type electrostatic chuck is preferably used.
The electrostatic chuck may be formed of one plate, or may be formed to have a plurality of auxiliary plates. In addition, in the case where the electrostatic attraction force is formed by one board, it is preferable that a plurality of circuits are included in the board, and the electrostatic attraction force can be controlled to be different depending on the position in the board.
Although not shown in fig. 2, the film deposition apparatus 11 may further include a substrate support unit that temporarily holds the substrate W before the substrate suction member 24 sucks and holds the substrate W loaded into the vacuum chamber 21 by the transfer robot 14. For example, the substrate support unit can be provided integrally with the mask support unit 23. That is, the mask support unit 23 is provided with a substrate support surface for supporting the substrate W at a position different from the mask support surface for supporting the mask M, thereby constituting a substrate support unit.
Although not shown in fig. 2, a cooling member (e.g., a cooling plate) for suppressing the temperature rise of the substrate W may be provided on the opposite side of the suction surface of the substrate suction member 24. This can suppress the organic material deposited on the substrate W from being deteriorated or deteriorated.
The film formation source 25 includes a crucible (not shown) for containing a film formation material to be formed on the substrate W, a heater (not shown) for heating the crucible, a shutter (not shown) for preventing the film formation material from scattering toward the substrate until the evaporation rate from the film formation source 25 becomes constant, and the like. The film formation source 25 can have various structures such as a point (point) film formation source and a line (linear) film formation source depending on the application. The film formation source 25 may be configured to include a plurality of crucibles that store different film formation materials. In such a configuration, in order to change the film formation material without opening the vacuum chamber 21 to the atmosphere, it is preferable to provide a plurality of crucibles for storing different film formation materials so as to be movable to the film formation position.
The magnetic force applying member 26 has a function of attracting the mask M toward the substrate W by a magnetic force and bringing the mask M into close contact therewith during the film forming process, and is configured to be vertically movable. The magnetic force applying member 26 is constituted by an electromagnet and/or a permanent magnet, for example.
Although not shown in fig. 2, the film formation device 11 preferably includes a film thickness monitor (not shown) and a film thickness calculation unit (not shown) for measuring the thickness of a film deposited on a substrate.
A mask pickup lifting mechanism 232 for lifting and lowering the mask pickup 231, a magnetic force applying member lifting and lowering mechanism 261 for lifting and lowering the magnetic force applying member 26, and the like are provided on the upper outer side (atmosphere side) of the vacuum chamber 21, that is, on the reference plate 214. A mask support unit elevating mechanism (not shown) for elevating the mask support unit 23 may be provided on the reference plate 214, but the present invention is not limited to this, and for example, the mask support unit elevating mechanism (not shown) may be provided on the atmosphere side of the lower portion of the 1 st vacuum chamber portion 211.
The film deposition apparatus 11 of the present embodiment further includes an alignment camera unit 27, and the alignment camera unit 27 is provided outside (on the atmosphere side) the upper portion of the vacuum chamber 21 and is configured to capture an image of an alignment mark formed on the substrate W and the mask M.
The alignment camera unit 27 preferably includes a rough alignment camera for roughly adjusting the relative position of the substrate W and the mask M, and a fine alignment camera for accurately adjusting the relative position of the substrate W and the mask M. The camera for coarse alignment has a relatively wide angle of view and a low resolution, and the camera for fine alignment has a relatively narrow angle of view and a high resolution.
The coarse alignment camera and the fine alignment camera are provided at positions corresponding to alignment marks formed on the substrate W and the mask M. For example, in the fine alignment camera, 4 cameras are provided at 4 corners of a rectangle, respectively, and in the rough alignment camera, 2 cameras are provided at the centers of two opposing sides of a rectangle. However, the present invention is not limited thereto, and the number and arrangement positions of the cameras may be set as appropriate according to the positions of the alignment marks of the substrate W and the mask M.
As shown in fig. 2, the alignment camera unit 27 of the film deposition apparatus 11 according to the present embodiment is provided so as to penetrate the reference plate 214 from the upper atmosphere side of the vacuum chamber 21 and enter the inside of the vacuum chamber 21. Therefore, the alignment camera unit 27 includes a vacuum corresponding cylinder (not shown) that seals the alignment camera disposed on the atmospheric side.
As described above, in the present embodiment, the calibration camera is provided so as to enter the inside of the vacuum chamber 21 through the vacuum conforming cylinder. Thus, even if the substrate W and the mask M are arranged at positions distant from the reference plate 214 by providing the magnetic levitation table mechanism 22, the focus can be aligned with the alignment mark formed on the substrate W and the mask M. Further, the position of the lower end of the vacuum correspondence cylinder is determined based on the depth of focus of the alignment camera and the distances between the substrate W and the mask M and the reference plate 214.
Although not shown in fig. 2, since the inside of the vacuum chamber 21 sealed in the film forming process is dark, an illumination light source for illuminating the alignment mark from below may be provided in order to take an image of the alignment mark by the alignment camera inserted into the vacuum chamber 21.
The film deposition apparatus 11 includes a control unit (not shown). The control unit has functions and functions of controlling the transfer of the substrate W and the mask M, controlling the alignment of the substrate W and the mask M, controlling the film formation source 25, controlling the film formation, and the like. The control unit may also have a function of controlling the voltage application to the electrostatic chuck.
The control unit may be configured by a computer having a processor, a memory, a storage device, an I/O, and the like, for example, and the functions of the control unit are realized by the processor executing a program stored in the memory or the storage device, a general-purpose personal computer may be used as the computer, an embedded computer, a programmable logic controller (P L C), an ASIC, an FPGA, or a circuit in which a part or all of the functions of the control unit are configured by an ASIC or an FPGA, and the control unit may be provided for each film forming apparatus, or one control unit may be configured to control a plurality of film forming apparatuses.
[ magnetic levitation Table mechanism ]
In particular, the magnetic levitation table mechanism 22 will be described in more detail with reference to fig. 3 to 7. As described above, the magnetic levitation table mechanism 22 includes the table reference plate portion 221, the fine movement table plate portion 222, and the magnetic levitation unit 223.
The table reference plate portion 221 is a member that is a reference for movement of the fine movement table plate portion 222, and is provided so that its position is fixed. For example, as shown in fig. 2, the stage reference plate portion 221 is provided so as to be fixed to the reference plate 214 of the vacuum chamber 21 in parallel with the XY plane. However, the present invention is not limited to this, and the table reference plate portion 221 may be fixed to another member (for example, another reference frame) instead of being directly fixed to the reference plate 214 as long as the position of the table reference plate portion 221 can be fixed.
Since the table reference plate portion 221 is a member that is a reference for movement of the fine movement table plate portion 222, it is preferably provided so as to be protected from external disturbance such as vibration from the vacuum pump or the floor surface by the extensible member 213, the vibration reduction unit 216, and the like.
The fine movement stage plate portion 222 is provided movably with respect to the stage reference plate portion 221, and a substrate suction member 24 such as an electrostatic chuck is provided on a main surface (for example, a lower surface) of the fine movement stage plate portion 222. Therefore, the substrate suction member 24 and the substrate W sucked by the substrate suction member 24 can be adjusted in position by the movement of the fine movement stage plate portion 222.
The magnetic levitation unit 223 includes: a magnetic levitation linear motor 31 for generating a driving force for moving the fine movement table plate portion 222 as a movable table with respect to the table reference plate portion 221 as a fixed table; a position measuring means for measuring the position of the fine movement table plate portion 222; a self-weight canceling member 33 for canceling (canceling) the gravity applied to the fine movement table plate portion 222 by applying a levitation force for levitating the fine movement table plate portion 222; and an origin positioning member 34 for determining the origin position of the fine movement table plate portion 222.
The magnetic levitation linear motor 31 is a driving source that generates a driving force for moving the fine movement table plate portion 222. In the present embodiment, the following three types of magnetic levitation linear motors are provided. The 1 st type is two X-direction magnetic levitation linear motors 311 that generate driving force for moving the fine movement stage plate portion 222 in the X direction. The second type is two Y-direction magnetic levitation linear motors 312 that generate driving force for moving the fine movement table plate portion 222 in the Y direction. The 3 rd type is three Z-direction magnetic levitation linear motors 313 that generate driving force for moving the fine movement stage plate portion 222 in the Z direction.
By using these plurality of magnetic levitation linear motors 31, the fine movement stage plate portion 222 can be made to be in six directions (X direction, Y direction, Z direction, θ)XDirection, thetaYDirection, thetaZDirection) is moved.
For example, the X-direction magnetic levitation linear motor 311, the Y-direction magnetic levitation linear motor 312, and the Z-direction magnetic levitation linear motor 313 may be driven in the same direction for the translational movement in the X-direction, the Y-direction, and the Z-direction.
About direction thetaZThe rotational movement in the direction may be performed by adjusting the driving directions of the two X-direction magnetic levitation linear motors 311 and the two Y-direction magnetic levitation linear motors 312. For example, when the X-direction maglev linear motor 311a is driven in the + X direction, the X-direction maglev linear motor 311b is driven in the-X direction, and the Y-direction maglev linear motor 312a is driven in the Y directionWhen the Y-direction magnetic levitation linear motor 312b is driven in the-Y direction by the + Y-direction drive, the fine movement mounting table plate portion 222 can be rotated counterclockwise about the Z axis. About direction thetaXDirection and thetaYSimilarly, the rotational movement in the direction may be performed by adjusting the driving direction of each of the three Z-direction magnetic levitation linear motors 313.
The number and arrangement of the magnetic levitation linear motors 31 shown in fig. 3 are exemplary, and the present invention is not limited thereto, and other configurations may be employed as long as the fine movement table plate portion 222 can be moved in a desired direction.
Further, by using the magnetic levitation table mechanism 22 instead of an alignment table using a mechanical motor, a ball screw, or a linear guide, the accuracy of the position adjustment of the substrate W can be further improved.
Unlike the mechanical mounting table mechanism, the magnetic levitation mounting table mechanism 22 can reduce the possibility of contamination due to particles and contamination due to evaporation of a lubricant, and the magnetic levitation mounting table mechanism 22 can be installed in the vacuum chamber 21. This reduces the distance between the holding member (substrate suction member 24) for the substrate W and the mounting table mechanism, and thus reduces the influence of vibration and external disturbance on the substrate suction member 24 during driving of the mounting table mechanism.
Fig. 5 is a schematic cross-sectional view showing the structure of the Z-direction magnetically levitated linear motor 313, and fig. 6 is a schematic cross-sectional view showing the structure of the X-direction magnetically levitated linear motor 311 or the Y-direction magnetically levitated linear motor 312.
The magnetically levitated linear motor 31 includes a fixing member 314 provided to the stage reference plate portion 221 and a movable member 315 provided to the fine movement stage plate portion 222. Further, the fixture 314 may be provided on one of the stage reference plate portion 221 and the fine movement stage plate portion 222, and the movable element 315 may be provided on the other. Therefore, the movable element 315 may be provided in the stage reference plate section 221, and the fixing element 314 may be provided in the fine movement stage plate section 222.
As shown in the drawing, the stator 314 of the maglev linear motor 31 includes a magnetic field generating member, for example, a coil 3141 through which a current flows, and the movable element 315 includes a magnetic body, for example, a permanent magnet 3151.
The magnetically levitated linear motor 31 applies a driving force to the permanent magnet 3151 of the movable element 315 by a magnetic field generated by flowing a current through the coil 3141 of the fixed element 314. The magnetically levitated linear motor 31 can adjust the direction of the force applied to the permanent magnet 3151 as the movable element 315 by adjusting the direction of the current flowing through the fixed element 314.
For example, as shown in fig. 5(b), when the direction of the current flowing through the coil 3141 of the stator 314 is set to rotate counterclockwise on the paper surface, the N-pole is guided to the left side (-X side) of the coil 3141 and the S-pole is guided to the right side (+ X side) in fig. 5 (a). Thereby, the movable element 315 receives a force in the downward (-Z) direction and moves downward. Conversely, when the direction of the current flowing through the coil 3141 is rotated clockwise, the movable element 315 moves in the upward (+ Z) direction.
Similarly, the X-direction magnetic levitation linear motor 311 or the Y-direction magnetic levitation linear motor 312 shown in fig. 6 can move the movable element 315 in the X-direction and the Y-direction by controlling the direction of the current flowing through the coil 3141 of the fixed element 314.
The position measuring means of the magnetic levitation unit 223 of the present embodiment is a means for measuring the position of the fine movement stage plate portion 222, and includes the laser interferometer 32 and the reflection portion 324 provided to face the fine movement stage plate portion 222. As the reflection unit 324, for example, a plane mirror can be used.
The laser interferometer 32 irradiates a measuring beam to the reflection unit 324 provided in the fine movement stage plate unit 222, and detects the reflected beam to measure the position of the reflection unit 324 (the position of the fine movement stage plate unit 222). More specifically, the laser interferometer 32 can measure the position of the fine movement stage plate portion 222 based on the interference light of the reflected light of the measurement beam and the reflected light of the reference beam.
The position measuring means of the magnetic levitation unit 223 of the present embodiment includes an X-direction position measuring unit for measuring the position of the fine movement stage plate portion 222 in the X direction, a Y-direction position measuring unit for measuring the position in the Y direction, and a Z-direction position measuring unit for measuring the position in the Z direction.
As shown in fig. 3, the laser interferometer 32 as the position measuring means of the present embodiment uses two X-direction laser interferometers 321 for detecting the position of the fine movement stage plate section 222 in the X-axis direction, one Y-direction laser interferometer 322 for detecting the position of the fine movement stage plate section 222 in the Y-axis direction, and three Z-direction laser interferometers 323 for detecting the position of the fine movement stage plate section 222 in the Z-axis direction.
The fine movement stage plate portion 222 is provided with a reflection portion 324 for reflecting the measurement beam from the laser interferometer 32 so as to face the laser interferometer 32. For example, the reflection unit 324 includes an X-direction reflection unit 3241 provided to face the X-direction laser interferometer 321, a Y-direction reflection unit 3242 provided to face the Y-direction laser interferometer 322, and a Z-direction reflection unit 3243 provided to face the Z-direction laser interferometer 323.
The X-direction position measuring unit includes an X-direction laser interferometer 321 and an X-direction reflecting unit 3241, the Y-direction position measuring unit includes a Y-direction laser interferometer 322 and a Y-direction reflecting unit 3242, and the Z-direction position measuring unit includes a Z-direction laser interferometer 323 and a Z-direction reflecting unit 3243.
With such a configuration of the position measuring means, the position of the fine movement table plate portion 222 can be precisely measured with 6 degrees of freedom (degree of freedom). That is, the X-direction position, the Y-direction position, and the Z-direction position of the fine movement stage plate section 222 can be measured by the X-direction laser interferometer 321, the Y-direction laser interferometer 322, and the Z-direction laser interferometer 323. Further, by providing a plurality of X-direction laser interferometers 321, it is also possible to measure rotation (θ) about the Z-axisZ) The position of the direction. Further, by providing a plurality of Z-direction laser interferometers 323, the rotational direction (θ) around the X-axis and/or the Y-axis can be measuredXOr thetaY) The position of (i.e., the inclination angle of the fine movement table plate portion 222).
The control unit of the film deposition apparatus 11 according to the present embodiment controls the magnetic levitation linear motor 31 based on the positional information of the fine movement stage plate portion 222 (or the substrate adsorbing member 24 provided thereon) measured by the laser interferometer 32. For example, the control unit of the film deposition apparatus 11 moves the fine movement stage plate portion 222 or the substrate adsorbing member 24 to a positioning target position determined by the position of the fine movement stage plate portion 222 or the substrate adsorbing member 24 measured by the laser interferometer 32 and the relative positional displacement amount between the substrate W and the mask M measured by the alignment camera unit 27. This enables the position of the fine movement stage plate portion 222 or the substrate suction member 24 to be controlled in a nanometer unit with high accuracy.
The weight-canceling member 33 is a member for canceling (canceling) the weight of the fine movement table plate portion 222. For example, as shown in fig. 4(c) and 7, the weight-canceling member 33 generates a levitation force having a magnitude corresponding to the gravity applied to the fine movement table plate portion 222 in a direction opposite to the gravity by a repulsive force or an attractive force between the 1 st magnet portion 331 provided on the table reference plate portion 221 side and the 2 nd magnet portion 332 provided on the fine movement table plate portion 222 side.
The 1 st magnet 331 and the 2 nd magnet 332 may be configured by electromagnets or permanent magnets. In the 1 st magnet portion 331 and the 2 nd magnet portion 332 shown in fig. 4 c and 7, a hatched portion with a lower right oblique line and a hatched portion with an upper right oblique line respectively indicate different magnetic poles (S-pole or N-pole).
For example, as shown in fig. 4(c), the 1 st magnet portion 331 provided on the mounting table reference plate portion 221 side and the 2 nd magnet portion 332 provided on the fine movement mounting table plate portion 222 side are arranged so that magnetic poles of opposite polarities face each other, and the 1 st magnet portion 331 provided on the mounting table reference plate portion 221 side attracts the 2 nd magnet portion 332 provided on the fine movement mounting table plate portion 222 side upward, whereby the gravitational force applied to the fine movement mounting table plate portion 222 can be cancelled.
Alternatively, the gravitational force of the fine movement table plate portion 222 may be cancelled by the repulsive force between the 1 st magnet portion 331 provided on the table reference plate portion 221 side and the 2 nd magnet portion 332 provided on the fine movement table plate portion 222 side.
For example, as shown in fig. 7, the 1 st magnet portion 331 and the 2 nd magnet portion 332 may be arranged such that the magnetic poles of the same polarity face each other, and the spacer 333 extending in the Z direction may be interposed between the fine movement stage plate portion 222 and the 2 nd magnet portion 332, so that the lower end (end portion) of the 2 nd magnet portion 332 is higher than the lower end (end portion) of the 1 st magnet portion 331. That is, the length of the spacer 333 in the Z direction is formed such that the lower end of the 2 nd magnet portion 332 provided on the side of the fine movement table plate portion 222 is higher than the lower end of the 1 st magnet portion 331 provided on the side of the table reference plate portion 221 (i.e., is farther from the fine movement table plate portion 222).
With the configuration shown in fig. 7, the 2 nd magnet portion 332 provided on the fine movement table plate portion 222 side receives a repulsive force upward from the 1 st magnet portion 331 provided on the table reference plate portion 221 side, and thus the gravitational force applied to the fine movement table plate portion 222 can be cancelled.
In order to support the fine movement stage plate portion 222 more stably, the weight canceling member 33 is preferably provided at least three positions in the XY plane, as shown in fig. 3. For example, it is preferable to provide the fine movement table plate portion 222 symmetrically around the center of gravity.
In this way, by using the weight canceling member 33, the load of the magnetically levitated linear motor 31 can be reduced, and the amount of heat generated by the magnetically levitated linear motor 31 can be suppressed. This can suppress thermal denaturation of the organic material deposited on the substrate W.
The origin positioning member 34 of the magnetic levitation unit 223 of the present embodiment is a member for determining the origin position of the fine movement stage plate portion 222, and may be constituted by a kinematic coupler (kinematic coupling) including a triangular pyramid-shaped concave portion 341 and a hemispherical convex portion 342.
For example, as shown in fig. 4(b), a triangular pyramid-shaped concave portion 341 is provided on the mounting table reference plate portion 221 side, and a hemispherical convex portion 342 is provided on the fine movement mounting table plate portion 222 side. When the hemispherical convex portion 342 is inserted into the triangular pyramid-shaped concave portion 341, the convex portion 342 comes into contact with the inner surface of the concave portion 341 with 3 fulcrums, and the position of the fine movement table plate portion 222 is determined.
As shown in fig. 3, the center position of the fine movement table plate portion 222 can be determined by providing three such origin positioning members 34 of the kinematic coupling type at equal intervals (for example, 120 ° intervals) around the center of the fine movement table plate portion 222 on a plane including the X direction and the Y direction. That is, the position of the fine movement stage plate portion 222 when the fine movement stage plate portion 222 is brought close to the stage reference plate portion 221 and the convex portions 342 of the three origin positioning members are seated in the concave portions 341 is measured by the laser interferometer 32, and is set as the origin position.
As described above, according to the film deposition apparatus 11 of the present embodiment, the mounting table and the driving mechanism thereof can be disposed in the vacuum chamber 21 of the film deposition apparatus 11 by using a magnetic levitation driving mechanism (magnetic levitation linear motor) instead of a mechanical driving mechanism. This can effectively reduce the influence of vibration due to external disturbance. Further, vibration caused by the mechanical driving can be reduced, and as a result, the accuracy of the position adjustment of the substrate can be improved. Further, by using the position measuring means including the laser interferometer 32, the weight canceling means 33, and the origin positioning means 34 including the kinematic coupler, the accuracy of the position adjustment of the substrate can be further improved.
However, in the present invention, the mechanism for adjusting the positions of the substrate W and the substrate suction member 24 is not limited to the magnetic levitation table mechanism 22, and various known techniques can be employed.
[ Structure of vacuum Container ]
A specific example of a vacuum vessel having a structure different from that of the vacuum vessel 21 shown in fig. 2 will be described with reference to fig. 8 to 10. In order to form a fine pattern on a substrate W such as a silicon wafer with high accuracy, it is preferable to increase the incidence angle (i.e., to make the film-forming material enter the film-forming surface of the substrate W nearly perpendicularly) when the film-forming material enters the substrate W from the film-forming source 25 through the mask M. Therefore, it is preferable to extend the distance from the film formation source 25 to the substrate W. When the distance is increased, the alignment stage mechanism for adjusting the position of the substrate W is provided at a relatively high position, and is therefore susceptible to external disturbances such as vibration from the vacuum pump or the floor surface. This reduces the accuracy of the position adjustment of the substrate W by the alignment stage mechanism, and also reduces the accuracy of the alignment of the substrate W with respect to the mask M, which may cause a reduction in the film deposition accuracy.
Therefore, the film deposition apparatus 11 of the present embodiment employs the following configuration as the structure of the vacuum chamber 21. That is, in the film deposition apparatus 11 of the present embodiment, the vacuum chamber 21 is divided into a plurality of chamber portions (for example, the 1 st vacuum chamber portion 211 and the 2 nd vacuum chamber portion 212), and the extensible member 213 is provided between the plurality of chamber portions. This reduces transmission of external vibration to the 1 st vacuum chamber 211 provided with the magnetic levitation table mechanism 22. In addition, although fig. 8 to 10 show a modification in which the vacuum vessel 21 is configured by two vacuum vessel portions 211 and 212, the present invention is not limited to this, and a configuration in which the vacuum vessel 21 includes three or more vacuum vessel portions may be adopted.
In the film formation apparatus 11, as described above, it is preferable that the vibration reduction unit 216 is provided between the reference plate portion and the installation table 217 of the film formation apparatus 11 in order to block or reduce transmission of vibration from the outside to the reference plate portion. The reference plate portion may constitute a part of a chamber wall constituting the vacuum chamber 21, or may be a structure different from the chamber wall.
Fig. 8 is a schematic cross-sectional view of a vacuum vessel according to modification 1 of the present invention, fig. 9 is a schematic cross-sectional view of a vacuum vessel according to modification 2 of the present invention, and fig. 10 is a schematic cross-sectional view of a vacuum vessel according to modification 3 of the present invention.
In fig. 8 to 10, various structures provided in the vacuum chamber are omitted in order to clarify the structure of the vacuum chamber 21. Various configurations provided inside the vacuum chamber 21 have been described with reference to fig. 2 and the like.
(modification 1)
The vacuum vessel 21a of modification 1 shown in fig. 8 is different from the vacuum vessel 21 shown in fig. 2 in that the reference plate 214 and the 1 st vacuum vessel portion 211 are directly connected, and no extensible member is provided between the reference plate 214 and the 1 st vacuum vessel portion 211. In the vacuum chamber 21a, the vibration transmitted through the mounting table 217 of the film forming apparatus 11 is reduced by the vibration reduction unit 216, and the vibration transmitted to the 1 st vacuum chamber 211 through the 2 nd vacuum chamber 212 is reduced by the extensible member 213, and the structure of the vacuum chamber 21a can be further simplified.
(modification 2)
In the vacuum chamber 21b of modification 2 shown in fig. 9, a different reference plate portion is not provided separately from the chamber wall, and the vibration damping unit 216 is provided between the lower chamber wall of the 1 st vacuum chamber portion 211 and the installation table 217 of the film deposition apparatus. In the case of such a configuration, the vibration transmitted from the outside of the film formation apparatus 11 to the chamber wall of the 1 st vacuum chamber 211 through the installation table 217 is reduced by the vibration reduction unit 216, and the vibration transmitted to the 1 st vacuum chamber 211 through the 2 nd vacuum chamber 212 is reduced by the extensible member 213. In the vacuum chamber 21b of modification 2, the upper chamber wall of the 1 st vacuum chamber portion 211 functions as a reference plate 214 to which the magnetic levitation table mechanism 22 is fixedly coupled. In the case of this modification, since there is no different reference plate portion, the structure of the vacuum chamber 21b can be further simplified.
(modification 3)
The vacuum chamber 21c of modification 3 shown in fig. 10 is similar to the vacuum chamber 21b of modification 2 in that the upper chamber wall of the 1 st vacuum chamber portion 211 functions as the reference plate 214. However, in the vacuum vessel 21c of modification 3, the structure is different from that of the vacuum vessel 21b of modification 2 in that the vibration damping means 216 is provided between a structure (for example, the reference plate support portion 215) projecting from the side chamber wall of the 1 st vacuum vessel portion 211 and the installation table 217.
In the vacuum chamber 21c of modification 3, the vibration damping means 216 is disposed at a position where the support point of the vibration damping means 216 is higher than at least the bottom surface of the chamber wall of the 1 st vacuum chamber portion 211.
The vibration reduction unit 216 is preferably provided so as to support a structural part of the film formation device 11 at the same height (substantially the same height) as the center of gravity of the structural part supported by the vibration reduction unit 216. For example, the vibration damping unit 216 is preferably provided to support the 1 st vacuum container portion 211 at a position having the same height (substantially the same height) as the center of gravity of the 1 st vacuum container portion 211 in which the magnetic levitation table mechanism 22 is disposed, among the plurality of vacuum container portions 211, 212.
With this configuration, the vibration (oscillation) of the 1 st vacuum chamber 211 can be effectively suppressed by the moment force caused by external vibration or the like with respect to the 1 st vacuum chamber 211 provided with the magnetic levitation table mechanism 22. Therefore, the influence of external disturbance of the upper chamber wall of the 1 st vacuum chamber portion 212 and the magnetic levitation table mechanism 22 fixed to the upper chamber wall can be reduced.
Although not particularly shown, it is also preferable that the vibration damping means 216 is provided so as to support the vacuum vessel 21 at a position at the same height as the height of the center of gravity of the vacuum vessel 21. With such a configuration, vibration of the vacuum chamber 21 can be effectively suppressed, and the influence of external disturbance of the magnetic levitation table mechanism 22 can be reduced.

Claims (15)

1. A film forming apparatus having a vacuum chamber, characterized in that,
the vacuum container includes a plurality of vacuum container portions and an extensible member provided between the plurality of vacuum container portions.
2. The film forming apparatus according to claim 1,
the vacuum container is provided with: a 1 st vacuum container part forming a 1 st internal space; a 2 nd vacuum container part forming a 2 nd internal space communicated with the 1 st internal space; and a 1 st retractable member provided between the 1 st vacuum container part and the 2 nd vacuum container part.
3. The film forming apparatus according to claim 2,
the 1 st retractable member is a bellows.
4. The film forming apparatus according to claim 2 or 3,
the film forming apparatus includes:
a substrate holding member that holds a substrate; and
a film forming source for receiving a film forming material and discharging the film forming material as particles,
the substrate holding member is provided in the 1 st vacuum chamber portion, and the film formation source is provided in the 2 nd vacuum chamber portion.
5. The film forming apparatus according to claim 4,
the 1 st vacuum chamber portion is provided with an alignment stage mechanism for adjusting the position of the substrate holding member.
6. The film forming apparatus according to claim 5,
the vacuum container includes a reference plate section for connecting the alignment stage mechanism, and a 2 nd extensible member provided between the reference plate section and the 1 st vacuum container section.
7. The film forming apparatus according to claim 5 or 6,
the film deposition apparatus includes a vibration reduction unit that suppresses transmission of vibration to the alignment stage mechanism.
8. The film forming apparatus according to claim 7,
the vacuum vessel includes a reference plate section connected to the alignment stage mechanism, and the vibration reduction unit is provided between the reference plate section and a mounting table of the film deposition apparatus.
9. The film forming apparatus according to claim 7 or 8,
the vibration damping unit supports the 1 st vacuum container unit at a position higher than a bottom surface of the 1 st vacuum container unit.
10. The film forming apparatus according to claim 9,
the vibration damping unit supports the 1 st vacuum container unit at a position having the same height as the height of the center of gravity of the 1 st vacuum container unit.
11. A film forming apparatus is characterized in that,
the film forming apparatus includes:
a vacuum vessel;
a substrate holding member provided in the vacuum chamber and configured to hold a substrate;
an alignment stage mechanism provided in the vacuum chamber and configured to adjust a position of the substrate holding member; and
and a vibration reduction unit for reducing transmission of vibration to the alignment stage mechanism.
12. The film forming apparatus according to claim 11,
the vacuum vessel includes a reference plate section connected to the alignment stage mechanism, and the vibration reduction unit is provided between the reference plate section and a mounting table of the film deposition apparatus.
13. The film forming apparatus according to claim 12,
the vibration reduction unit supports the vacuum container at a position higher than a bottom surface of the vacuum container.
14. The film forming apparatus according to claim 13,
the vibration damping unit is provided to support the vacuum container at a position at the same height as that of the center of gravity of the vacuum container.
15. An apparatus for manufacturing an electronic device, characterized in that,
the manufacturing device of the electronic device comprises:
the film forming apparatus according to any one of claims 1 to 14;
a mask storage device for receiving a mask; and
a conveying device for conveying the substrate or the mask.
CN201911161941.2A 2019-01-11 2019-11-25 Film forming apparatus and electronic device manufacturing apparatus Active CN111434797B (en)

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