CN113087020A - 一种三元金属硫化物纳米片及其制备方法和应用 - Google Patents
一种三元金属硫化物纳米片及其制备方法和应用 Download PDFInfo
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- 239000002135 nanosheet Substances 0.000 title claims abstract description 33
- 229910052976 metal sulfide Inorganic materials 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 239000002243 precursor Substances 0.000 claims description 43
- IOEJYZSZYUROLN-UHFFFAOYSA-M Sodium diethyldithiocarbamate Chemical compound [Na+].CCN(CC)C([S-])=S IOEJYZSZYUROLN-UHFFFAOYSA-M 0.000 claims description 40
- 239000011572 manganese Substances 0.000 claims description 38
- 239000000243 solution Substances 0.000 claims description 29
- 239000012266 salt solution Substances 0.000 claims description 26
- LMBWSYZSUOEYSN-UHFFFAOYSA-N diethyldithiocarbamic acid Chemical compound CCN(CC)C(S)=S LMBWSYZSUOEYSN-UHFFFAOYSA-N 0.000 claims description 20
- 229950004394 ditiocarb Drugs 0.000 claims description 18
- 150000001661 cadmium Chemical class 0.000 claims description 17
- 150000002696 manganese Chemical class 0.000 claims description 17
- 239000002904 solvent Substances 0.000 claims description 16
- 239000006185 dispersion Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 14
- 238000001914 filtration Methods 0.000 claims description 8
- 238000003756 stirring Methods 0.000 claims description 8
- 238000005406 washing Methods 0.000 claims description 8
- 229910021380 Manganese Chloride Inorganic materials 0.000 claims description 7
- GLFNIEUTAYBVOC-UHFFFAOYSA-L Manganese chloride Chemical compound Cl[Mn]Cl GLFNIEUTAYBVOC-UHFFFAOYSA-L 0.000 claims description 7
- XIEPJMXMMWZAAV-UHFFFAOYSA-N cadmium nitrate Inorganic materials [Cd+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XIEPJMXMMWZAAV-UHFFFAOYSA-N 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
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- 229940099607 manganese chloride Drugs 0.000 claims description 7
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- 239000011565 manganese chloride Substances 0.000 claims description 7
- NMHMNPHRMNGLLB-UHFFFAOYSA-N phloretic acid Chemical compound OC(=O)CCC1=CC=C(O)C=C1 NMHMNPHRMNGLLB-UHFFFAOYSA-N 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
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- RMZAYIKUYWXQPB-UHFFFAOYSA-N trioctylphosphane Chemical compound CCCCCCCCP(CCCCCCCC)CCCCCCCC RMZAYIKUYWXQPB-UHFFFAOYSA-N 0.000 claims description 4
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 claims description 3
- QGLWBTPVKHMVHM-KTKRTIGZSA-N (z)-octadec-9-en-1-amine Chemical compound CCCCCCCC\C=C/CCCCCCCCN QGLWBTPVKHMVHM-KTKRTIGZSA-N 0.000 claims description 3
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 claims description 3
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 claims description 3
- REYJJPSVUYRZGE-UHFFFAOYSA-N Octadecylamine Chemical compound CCCCCCCCCCCCCCCCCCN REYJJPSVUYRZGE-UHFFFAOYSA-N 0.000 claims description 3
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000005642 Oleic acid Substances 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 150000003973 alkyl amines Chemical class 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 150000001356 alkyl thiols Chemical class 0.000 claims description 3
- 125000005233 alkylalcohol group Chemical group 0.000 claims description 3
- QCUOBSQYDGUHHT-UHFFFAOYSA-L cadmium sulfate Chemical compound [Cd+2].[O-]S([O-])(=O)=O QCUOBSQYDGUHHT-UHFFFAOYSA-L 0.000 claims description 3
- 229910000331 cadmium sulfate Inorganic materials 0.000 claims description 3
- WNAHIZMDSQCWRP-UHFFFAOYSA-N dodecane-1-thiol Chemical compound CCCCCCCCCCCCS WNAHIZMDSQCWRP-UHFFFAOYSA-N 0.000 claims description 3
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims description 3
- 229940071125 manganese acetate Drugs 0.000 claims description 3
- UOGMEBQRZBEZQT-UHFFFAOYSA-L manganese(2+);diacetate Chemical compound [Mn+2].CC([O-])=O.CC([O-])=O UOGMEBQRZBEZQT-UHFFFAOYSA-L 0.000 claims description 3
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 claims description 3
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadecene Natural products CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 claims description 3
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 239000002055 nanoplate Substances 0.000 claims 2
- 239000008367 deionised water Substances 0.000 description 7
- 229910021641 deionized water Inorganic materials 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 230000001699 photocatalysis Effects 0.000 description 5
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
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- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- UDWCKMMKPOGURO-UHFFFAOYSA-N 1,2-dihydropyrazolo[3,4-b]pyridin-4-one Chemical compound O=C1C=CNC2=C1C=NN2 UDWCKMMKPOGURO-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 239000004280 Sodium formate Substances 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
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- SCDJWNPJRZRMGZ-UHFFFAOYSA-L n,n-diethylcarbamodithioate;manganese(2+) Chemical compound [Mn+2].CCN(CC)C([S-])=S.CCN(CC)C([S-])=S SCDJWNPJRZRMGZ-UHFFFAOYSA-L 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HLBBKKJFGFRGMU-UHFFFAOYSA-M sodium formate Chemical compound [Na+].[O-]C=O HLBBKKJFGFRGMU-UHFFFAOYSA-M 0.000 description 1
- 235000019254 sodium formate Nutrition 0.000 description 1
- GWQWBFBJCRDINE-UHFFFAOYSA-M sodium;carbamodithioate Chemical compound [Na+].NC([S-])=S GWQWBFBJCRDINE-UHFFFAOYSA-M 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- ZMBHCYHQLYEYDV-UHFFFAOYSA-N trioctylphosphine oxide Chemical compound CCCCCCCCP(=O)(CCCCCCCC)CCCCCCCC ZMBHCYHQLYEYDV-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明公开了一种三元金属硫化物纳米片的制备方法及其制备方法和应用,该方法通过将二乙基二硫代胺基甲酸钠分别与锰盐和镉盐混合,制备二乙基二硫代胺基甲酸锰和二乙基二硫代胺基甲酸镉作为前驱体,利用两种前驱体的热分解来制备金属硫化物,操作过程简单、便捷,无需使用大量有机改性剂,分离提纯过程简单,反应时间短,可以快速、规模化制备,大大提高了MnxCd1‑xS纳米片的生产效率和生产质量。
Description
技术领域
本发明涉及纳米半导体材料技术领域,尤其涉及一种三元金属硫化物纳米片的制备方法及其制备方法和应用。
背景技术
MnxCd1-xS是一种典型的多元硫化物固溶体,具有不寻常的磁学、光学和电学特性以及优异的可见光吸收能力,因此在太阳能光催化转化领域具有巨大的应用前景。然而对MnxCd1-xS的研究一直未受到重视,这主要受限于其制备方法。目前,制备MnxCd1-xS的方法主要有水热法(Chem.Mater.2010,22,743–745;J.Mater.Chem.A,2014,2,4619-4626;AppliedCatalysis B:Environmental,2017,203,282-288.)和热注射法(J.Mater.Chem.A,2018,6(46),23683-23689)。以上方法均采用液相合成的方法,实验过程中使用大量的有机改性剂和溶剂,分离提纯困难、反应时间长、产率低,很难实现规模化制备。
发明内容
有鉴于此,本发明提供了一种三元金属硫化物纳米片的制备方法及其制备方法和应用,可以规模化制备MnxCd1-xS纳米片,且无需使用有机改性剂。
本发明采用的技术方案为:
一种三元金属硫化物纳米片的制备方法,具体包括以下步骤:
步骤S1,配置锰盐溶液、镉盐溶液和二乙基二硫代氨基甲酸钠溶液;
步骤S2,利用锰盐溶液、镉盐溶液和二乙基二硫代氨基甲酸钠溶液制备Mn(DDTC)2前驱体和Cd(DDTC)2前驱体;
步骤S3,将Mn(DDTC)2前驱体和Cd(DDTC)2前驱体分散于溶剂中,得到分散液;
步骤S4,将分散液涂布在基底上,并在惰性气体中加热,得到三元金属硫化物MnxCd1-xS纳米片。
优选地,所述步骤S2中利用锰盐溶液、镉盐溶液和二乙基二硫代氨基甲酸钠溶液制备Mn(DDTC)2前驱体和Cd(DDTC)2前驱体的具体步骤为:
将二乙基二硫代氨基甲酸钠溶液逐滴加入锰盐溶液中,在常温下磁力搅拌均匀后静置设定时间,再经过冲洗、过滤、烘干或烘烤工序,得到Mn(DDTC)2前驱体;
将二乙基二硫代氨基甲酸钠溶液逐滴加入镉盐溶液中,在常温下磁力搅拌均匀后静置设定时间,再经过冲洗、过滤、烘干或烘烤工序,得到Cd(DDTC)2前驱体。
优选地,所述Mn(DDTC)2前驱体和Cd(DDTC)2前驱体溶液的浓度均为0.01-0.5mol/L。
优选地,所述锰盐溶液为硝酸锰、醋酸锰、氯化锰溶液中的任一种,镉盐溶液为硝酸镉、硫酸镉、氯化镉中任一种。
优选地,所述步骤S3中,利用超声波将Mn(DDTC)2前驱体和Cd(DDTC)2前驱体以1:10~10:1的摩尔比完全分散在溶剂中,得到分散液。
优选地,所述分散液的浓度为0.01-0.5mol/L。
优选地,所述溶剂为烷基胺、烷基酸、烷基醇和烷基硫醇中的一种或多种。
优选地,所述溶剂为三辛基膦、三辛集氧膦、油胺、十八胺、油酸、十二硫醇、十八烯中的一种或多种。
本发明还提供了采用所述制备方法制备得到的三元金属硫化物纳米片。
本发明还提供了上述三元金属硫化物纳米片在制备锂电子电池电极或太阳能电池电极中的应用。
本发明的有益效果是:
1、本发明通过将二乙基二硫代胺基甲酸钠分别与锰盐和镉盐混合,制备二乙基二硫代胺基甲酸锰和二乙基二硫代胺基甲酸镉作为前驱体,利用两种前驱体的热分解来制备金属硫化物,操作过程简单、便捷,无需使用大量有机改性剂,分离提纯过程简单,反应时间短,可以快速、规模化制备,大大提高了MnxCd1-xS纳米片的生产效率和生产质量。
2、本发明制备得到的MnxCd1-xS纳米片形貌和尺寸均匀,具有很强的可见光吸收能力,具有极高的光催化活性,可应用于光催化、锂离子电池电极和太阳能电池电极等领域,有很好的应用前景和经济效益。
附图说明
为了更清楚地说明本发明实施例的技术方案,下面将对实施例中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其它的附图。
图1为根据本发明的方法所制备的MnxCd1-xS纳米片的扫描电镜(SEM)照片。
图2为根据本发明的方法所制备的MnxCd1-xS纳米片的紫外-可见吸收光谱图。
图3为本发明的方法的流程图。
具体实施方式
为了更好的理解本发明的技术方案,下面结合附图对本发明实施例进行详细描述。
应当明确,所描述的实施例仅仅是本发明的一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例,都属于本发明保护的范围。
下面通过具体的实施例并结合附图对本申请做进一步的详细描述。
本发明给出一种三元金属硫化物纳米片的制备方法,该方法将二乙基二硫代胺基甲酸钠分别与锰盐和镉盐混合,制备出二乙基二硫代胺基甲酸锰和二乙基二硫代胺基甲酸镉,将二乙基二硫代胺基甲酸锰和二乙基二硫代胺基甲酸镉作为前驱体分散于溶剂中,然后将分散液涂布到基底上,在惰性气体中加热,制备得到三元金属硫化物MnxCd1-xS纳米片。
本发明的三元金属硫化物纳米片的制备方法,具体包括以下步骤:
步骤S1,配置锰盐溶液、镉盐溶液和二乙基二硫代氨基甲酸钠溶液。
具体地,将锰盐、镉盐和二乙基二硫代氨基甲酸钠分别溶于去离子水中,得到其各自的水溶液。
锰盐选用的是硝酸锰、醋酸锰、氯化锰溶液中的任一种,镉盐选用的是硝酸镉、硫酸镉、氯化镉中任一种。
步骤S2,利用锰盐溶液、镉盐溶液和二乙基二硫代氨基甲酸钠溶液制备Mn(DDTC)2前驱体和Cd(DDTC)2前驱体。
制备Mn(DDTC)2前驱体和Cd(DDTC)2前驱体的步骤为:
将二乙基二硫代氨基甲酸钠溶液逐滴加入锰盐溶液中,在常温下磁力搅拌均匀后静置设定时间,再经过去离子水反复冲洗、过滤、烘干或烘烤工序,得到Mn(DDTC)2前驱体;
将二乙基二硫代氨基甲酸钠溶液逐滴加入镉盐溶液中,在常温下磁力搅拌均匀后静置设定时间,再经过冲洗、过滤、烘干或烘烤工序,得到Cd(DDTC)2前驱体。
制备出的Mn(DDTC)2前驱体和Cd(DDTC)2前驱体溶液的浓度均为0.01-0.5mol/L。
步骤S3,将Mn(DDTC)2前驱体和Cd(DDTC)2前驱体分散于溶剂中,得到分散液。
具体地,利用超声波将Mn(DDTC)2前驱体和Cd(DDTC)2前驱体以1:10~10:1的摩尔比完全分散在溶剂中,得到分散液,分散液的浓度为0.01-0.5mol/L,优选为0.22mol/L。
溶剂可为烷基胺、烷基酸、烷基醇和烷基硫醇中的一种或多种。优选地,溶剂可为三辛基膦、三辛集氧膦、油胺、十八胺、油酸、十二硫醇、十八烯中的一种或多种。
步骤S4,将分散液涂布在基底上,并在惰性气体中加热,得到三元金属硫化物MnxCd1-xS纳米片。
基底可选用硅片、碳化硅、云母片中的一种或多种。
惰性气体可选用氮气、氩气中的一种或两种气体的混合物。
本发明的制备方法可规模化、快速制备MnxCd1-xS纳米片,制备出的三元金属硫化物MnxCd1-xS纳米片可用于光催化、锂离子电池电极和太阳能电池电极等领域,有很好的应用前景和经济效益。
下面通过举例详细说明本发明的三元金属硫化物纳米片的制备方法,该示例中采用的取锰盐为氯化锰,镉盐为硝酸镉,具体制备过程如下:
步骤S1,称取20mmol二乙基二硫代氨基甲酸钠(NaDDTC)溶于100ml去离子水中,得到二乙基二硫代氨基甲酸钠溶液,
称取10mmol氯化锰溶于100ml去离子水中,得到氯化锰溶液,
同样,称取10mmol硝酸镉溶于100ml去离子水中,得到硝酸镉溶液。
步骤S2,将二乙基二硫代氨基甲酸钠溶液逐滴加入氯化锰溶液中,在常温下磁力搅拌1小时后,静置3小时,然后用去离子水反复冲洗,经过过滤后,将滤饼放到烘箱内在60℃的温度下干燥12小时,得到Mn(DDTC)2前驱体。
同时,将二乙基二硫代氨基甲酸钠溶液逐滴加入硝酸镉溶液中,在常温下磁力搅拌1小时后,静置3小时,然后用去离子水反复冲洗,经过过滤后,将滤饼放到烘箱内在60℃的温度下干燥12小时,得到Cd(DDTC)2前驱体。
步骤S3,分别称取0.11mmol的Mn(DDTC)2前驱体和0.11mmol的Cd(DDTC)2前驱体分散在10mL的三辛基磷溶剂中,利用超声波使这两种前驱体完全分散在溶剂中,得到分散液。
步骤S4,取20μL分散液涂覆在1cm*1cm硅基底上,然后将硅基底置于加热器中,在惰性气体的保护下,在200℃-300℃的温度下加热5-20分钟进行热分解(优选地,加热温度可设定为250℃,加热时长可设定为10分钟),反应结束后自然冷却至室温,得到MnxCd1-xS纳米片。
由图1可知,采用本发明方法制备得到的MnxCd1-xS纳米片的形貌和尺寸均匀。由图2可知,所得的MnxCd1-xS纳米片具有很强的可见光吸收能力,具有极高的光催化活性。
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明保护的范围之内。
Claims (10)
1.一种三元金属硫化物纳米片的制备方法,其特征在于,具体包括以下步骤:
步骤S1,配置锰盐溶液、镉盐溶液和二乙基二硫代氨基甲酸钠溶液;
步骤S2,利用锰盐溶液、镉盐溶液和二乙基二硫代氨基甲酸钠溶液制备Mn(DDTC)2前驱体和Cd(DDTC)2前驱体;
步骤S3,将Mn(DDTC)2前驱体和Cd(DDTC)2前驱体分散于溶剂中,得到分散液;
步骤S4,将分散液涂布在基底上,并在惰性气体中加热,得到三元金属硫化物MnxCd1-xS纳米片。
2.根据权利要求1所述的三元金属硫化物纳米片的制备方法,其特征在于,所述步骤S2中利用锰盐溶液、镉盐溶液和二乙基二硫代氨基甲酸钠溶液制备Mn(DDTC)2前驱体和Cd(DDTC)2前驱体的具体步骤为:
将二乙基二硫代氨基甲酸钠溶液逐滴加入锰盐溶液中,常温下磁力搅拌均匀后静置设定时间,再经过冲洗、过滤、烘干或烘烤工序,得到Mn(DDTC)2前驱体;
将二乙基二硫代氨基甲酸钠溶液逐滴加入镉盐溶液中,常温下磁力搅拌均匀后静置设定时间,再经过冲洗、过滤、烘干或烘烤工序,得到Cd(DDTC)2前驱体。
3.根据权利要求1或2所述的三元金属硫化物纳米片的制备方法,其特征在于,所述Mn(DDTC)2前驱体和Cd(DDTC)2前驱体溶液的浓度均为0.01-0.5mol/L。
4.根据权利要求1或2所述的三元金属硫化物纳米片的制备方法,其特征在于,所述锰盐溶液为硝酸锰、醋酸锰、氯化锰溶液中的任一种,镉盐溶液为硝酸镉、硫酸镉、氯化镉中任一种。
5.根据权利要求1所述的三元金属硫化物纳米片的制备方法,其特征在于,所述步骤S3中,利用超声波将Mn(DDTC)2前驱体和Cd(DDTC)2前驱体以1:10~10:1的摩尔比完全分散在溶剂中,得到分散液。
6.根据权利要求1或5所述的三元金属硫化物纳米片的制备方法,其特征在于,所述分散液的浓度为0.01-0.5mol/L。
7.根据权利要求1或5所述的三元金属硫化物纳米片的制备方法,其特征在于,所述溶剂为烷基胺、烷基酸、烷基醇和烷基硫醇中的一种或多种。
8.根据权利要求7所述的三元金属硫化物纳米片的制备方法,其特征在于,所述溶剂为三辛基膦、三辛集氧膦、油胺、十八胺、油酸、十二硫醇、十八烯中的一种或多种。
9.采用权利要求1-8中任一项所述制备方法制备得到的三元金属硫化物纳米片。
10.如权利要求9所述的三元金属硫化物纳米片在制备锂电子电池电极或太阳能电池电极中的应用。
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