CN113078238A - Same-plane photoconductive switch based on LD AZO film electrode and preparation method thereof - Google Patents
Same-plane photoconductive switch based on LD AZO film electrode and preparation method thereof Download PDFInfo
- Publication number
- CN113078238A CN113078238A CN202010006153.2A CN202010006153A CN113078238A CN 113078238 A CN113078238 A CN 113078238A CN 202010006153 A CN202010006153 A CN 202010006153A CN 113078238 A CN113078238 A CN 113078238A
- Authority
- CN
- China
- Prior art keywords
- substrate
- azo
- electrode
- silicon carbide
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 93
- 239000010408 film Substances 0.000 claims abstract description 62
- 230000003287 optical effect Effects 0.000 claims abstract description 53
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 43
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 claims abstract description 22
- 239000010409 thin film Substances 0.000 claims abstract description 22
- 229920002120 photoresistant polymer Polymers 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 35
- 238000004544 sputter deposition Methods 0.000 claims description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 238000004528 spin coating Methods 0.000 claims description 7
- 229910052720 vanadium Inorganic materials 0.000 claims description 7
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 238000000861 blow drying Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 238000005019 vapor deposition process Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 11
- 239000000969 carrier Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a preparation method of a coplanar photoconductive switch based on an LD AZO film electrode, which comprises the following steps: (a) providing a silicon carbide substrate; (b) manufacturing an AZO film electrode on the surface of the silicon carbide substrate; (c) manufacturing a metal electrode on the AZO film electrode; (d) and vertically and uniformly distributing a plurality of LD optical components on the surface of the silicon carbide substrate or the AZO thin-film electrode to finish the manufacture of the coplanar photoconductive switch. The coplanar photoconductive switch based on the LD AZO film electrode has longer service life and smaller size, and is convenient to carry and use.
Description
Technical Field
The invention belongs to the technical field of microelectronics, and particularly relates to a coplanar photoconductive switch based on an LD AZO film electrode and a preparation method thereof.
Background
The photoconductive switch is a light-operated switching device and is widely applied to power circuits. The photoconductive switch achieves the effect of controlling the on-off of the circuit by utilizing the photoelectric effect of the semiconductor. When light irradiates the material, a photogenerated carrier is generated in the material, the photogenerated carrier forms drift current under external voltage, the resistance of the photogenerated carrier is greatly reduced externally, and when the power reaches a threshold value, the photoconductive switch is switched on.
The traditional photoconductive switch is mainly made of Si and GaAs, and the optical trigger device covers the whole switch surface, so that current filaments generated during the operation of the photoconductive switch are concentrated in the edge area of the switch surface, and the edge area bears large current and is easy to break down, thereby shortening the service life of the photoconductive switch and even damaging the photoconductive switch; meanwhile, the traditional photoconductive switch electrode is positioned on the surface of the substrate, carriers generated by illumination are transported on the surface, the current density of the surface is high, the electron hole mobility is low, and the on-resistance of the switch is high. In addition, the conventional photoconductive switch is also large in size and is not easy to carry.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a coplanar photoconductive switch based on an LD AZO film electrode and a preparation method thereof. The technical problem to be solved by the invention is realized by the following technical scheme:
a method for preparing a coplanar photoconductive switch based on an LD AZO film electrode comprises the following steps:
(a) providing a silicon carbide substrate;
(b) manufacturing an AZO film electrode on the surface of the silicon carbide substrate;
(c) manufacturing a metal electrode on the AZO film electrode;
(d) and vertically and uniformly distributing a plurality of LD optical components on the surface of the silicon carbide substrate or the AZO thin-film electrode to finish the manufacture of the coplanar photoconductive switch.
In one embodiment of the invention, the silicon carbide substrate is a 6H-SiC substrate with a vanadium dopant.
In one embodiment of the present invention, step (b) comprises:
(b1) sputtering an AZO film on the surface of the silicon carbide substrate by utilizing a magnetron sputtering process under a vacuum condition;
(b2) and etching the AZO film to form an AZO film electrode.
In one embodiment of the present invention, step (b2) includes:
(b21) uniformly spin-coating photoresist on the AZO film;
(b22) etching the photoresist by utilizing a photoetching process to form a region to be etched on the surface of the silicon carbide substrate;
(b23) and etching the area to be etched by using dilute hydrochloric acid, and stripping and removing photoresist to form the AZO film electrode.
In one embodiment of the present invention, step (b22) includes:
(b22-1) heating the substrate coated with the photoresist at a high temperature of 130-180 ℃ for 110-130 s;
(b22-2) aligning the pattern of the entire substrate and the first reticle using an optical exposure system, and then irradiating with ultraviolet light to expose the substrate;
(b22-3) placing the exposed substrate into positive photoresist developer for development for 30-50 s, washing with deionized water, and drying with high-purity nitrogen;
(b22-4) heating the substrate at 130-180 ℃ for 110-130 s to form an area to be etched.
In one embodiment of the present invention, after step (b22) and before (b23), the method further comprises:
and depositing a silicon nitride material on the bottom of the substrate by adopting a plasma enhanced vapor deposition process to form a reflecting layer.
In one embodiment of the present invention, step (c) comprises:
(c1) forming a metal electrode to-be-grown region on the surface of the substrate by utilizing a photoetching process;
(c2) and sputtering an Al metal film on the region to be grown of the metal electrode by adopting a magnetron direct current sputtering process to form the Al metal electrode.
In one embodiment of the present invention, step (c1) includes:
(c11) uniformly spin-coating photoresist on the surface of the substrate;
(c12) calibrating the patterns of the whole substrate and the second mask plate by using an optical exposure system, and irradiating the patterns by using ultraviolet light to expose the substrate;
(c13) and (3) placing the exposed substrate into positive photoresist developer for development for 30-50 s, then washing with deionized water, and blow-drying with high-purity nitrogen gas to form the region to be grown of the metal electrode.
In one embodiment of the present invention, step (c2) includes:
(c21) selecting a high-purity Al target, and sputtering an Al metal film on the region to be grown of the metal electrode under the condition of back bottom vacuum; wherein the sputtering pressure is 1.2Pa, the sputtering power is 60W, and the sputtering rate is 5 nm/min;
(c22) and removing the photoresist, and forming an Al metal electrode in the region of the metal electrode to be grown.
Another embodiment of the present invention provides a coplanar photoconductive switch based on LD AZO thin film electrodes, including: the device comprises a reflecting layer, a silicon carbide substrate, an AZO thin-film electrode, a metal electrode and an optical part; the optical part comprises an optical waveguide medium, an electro-optical modulator and an LD-based optical trigger device; wherein, the coplanar photoconductive switch is prepared by the method of the embodiment.
The invention has the beneficial effects that:
1. according to the coplanar photoconductive switch based on the LD AZO film electrode, the optical trigger devices are vertically and uniformly distributed on the substrate, so that the optical trigger devices are distributed in a dotted manner in the electrode area, the current sequentially passes through the laser irradiation point from the anode to the cathode, and forms more current wires according to the laser irradiation point, so that the device can bear larger conducting current, and the service life of the photoconductive switch is prolonged;
2. the coplanar photoconductive switch based on the LD AZO film electrode adopts the mode that the AZO film electrode is combined with the Al electrode, and the AZO film electrode is arranged on the silicon carbide substrate, so that the maximum light transmission amount of the substrate is increased, the light energy utilization rate is improved, the energy consumption of a light trigger device is reduced, carriers generated by illumination can be effectively collected, and the phenomenon that the carriers are accumulated at the electrode to cause overlarge local electric field to cause breakdown in advance is avoided; meanwhile, the size of the device can be properly reduced according to the actual application requirement, so that the on-resistance is reduced;
3. the coplanar photoconductive switch based on the LD AZO film electrode integrally encapsulates the optical part device and the photoconductive switch, so that the assembly link is omitted in the production process, the size of the device is integrally reduced, the device is convenient to carry and use, and the device can adapt to strong vibration, impact and other environments.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic flow chart of a method for manufacturing a coplanar photoconductive switch based on an LD AZO thin-film electrode according to an embodiment of the present invention;
FIG. 2 is a schematic view of a first reticle in shape provided by an embodiment of the invention;
FIG. 3 is a schematic shape diagram of a second reticle provided by an embodiment of the invention;
FIG. 4 is a schematic diagram of the structure of an LD optical component provided by an embodiment of the present invention;
fig. 5 is a schematic diagram of an LD driving circuit according to an embodiment of the present invention;
FIGS. 6a to 6k are schematic diagrams of a method for manufacturing a coplanar photoconductive switch based on an LD AZO thin film electrode according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of a coplanar photoconductive switch based on an LD AZO thin-film electrode according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Referring to fig. 1, fig. 1 is a schematic flow chart of a method for manufacturing a coplanar photoconductive switch based on an LD AZO thin film electrode according to an embodiment of the present invention, including:
(a) providing a silicon carbide substrate;
in this embodiment, silicon carbide (SiC) is selected as the substrate material to prepare the optical waveguide switch, mainly because SiC has advantages of larger forbidden bandwidth, higher critical breakdown electric field, excellent heat dissipation performance and high dark-state resistivity, and ultrashort carrier lifetime compared with Si and GaAs used for conventionally preparing the optical waveguide switch, and the optical waveguide switch prepared by using SiC has better performance.
Further, the silicon carbide substrate is a 6H-SiC substrate with a vanadium dopant.
Generally, SiC contains some impurities, wherein 6H — SiC contains mainly nitrogen and boron impurities, nitrogen is at a deep donor level, boron is at an acceptor level, and if the number of electrons ionized from the nitrogen level and the number of electrons accepted from the boron level are perfectly balanced, the material is not only composite but also semi-insulating. However, in practice, one of them always exists in a larger amount than the other, so the present embodiment adds a new dopant vanadium to the 6H-SiC material, so that the ionization and the accepted electrons are perfectly balanced, thereby leading to a very short recombination time, and really realizing a larger dark resistance and a smaller on-resistance.
Specifically, the doping concentration of vanadium in the 6H-SiC substrate with the vanadium dopant selected in the embodiment is 1 × 1016cm-3～1×1017cm-3。
(b) Manufacturing an AZO film electrode on the surface of the silicon carbide substrate;
the AZO film (Al-doped ZnO transparent conductive film) is a wide-bandgap semiconductor material, has low resistivity and good conductivity, and simultaneously has the optical characteristics of high transmittance in a visible light region, cut-off in an ultraviolet region and the like; in addition, it has wide source and low price, and is gradually becoming the main transparent conductive film material.
In this embodiment, before fabricating the AZO thin film electrode, the selected silicon carbide substrate is polished and cleaned.
Specifically, the roughness of the silicon carbide substrate is reduced to an atomic level by a chemical mechanical polishing process (CMP), and then sufficient cleaning and blow-drying of surface moisture are performed.
Further, the step (b) may include:
(b1) sputtering an AZO film on the surface of the silicon carbide substrate by utilizing a magnetron sputtering process under a vacuum condition;
specifically, under the vacuum condition, an Al-doped ZnO target is selected to perform radio frequency magnetron sputtering on the surface of the substrate, and meanwhile, in order to ensure the good crystallization degree of the AZO film, the silicon carbide substrate is heated and kept at 380-420 ℃. After a period of sputtering, an AZO film with the thickness of 200nm is formed on the silicon carbide substrate.
And then, ultrasonically cleaning the surface of the sample by using acetone, repeatedly cleaning the surface by using deionized water for 3 times, and drying the surface by using high-purity nitrogen.
(b2) Etching the AZO film to form an AZO film electrode;
further, the step (b2) includes:
(b21) uniformly spin-coating photoresist on the AZO film;
specifically, a sample is placed on a rotating disc of a spin coater, an AZO film faces upwards, positive photoresist is used, the photoresist is dripped at the center of the sample, and the rotating speed and time are set to obtain a photoresist thin layer with uniform thickness.
In this embodiment, the rotation speed of the spin coater rotating disc may be 4000rpm, and the rotation time may be 20 s.
(b22) Etching the photoresist by utilizing a photoetching process to form a region to be etched on the surface of the silicon carbide substrate;
further, step (b22) may include:
(b22-1) heating the substrate coated with the photoresist at a high temperature of 130-180 ℃ for 110-130 s; the purpose of this was to evaporate the water from the colloid, making it better adhere to the AZO film;
(b22-2) aligning the pattern of the entire substrate and the first reticle using an optical exposure system, and then irradiating with ultraviolet light to expose the substrate;
in this embodiment, the optical exposure system may be a mercury lamp. The pattern of the first mask is a specific position for manufacturing the AZO film electrode, please refer to fig. 2, and fig. 2 is a schematic shape diagram of the first mask provided by the embodiment of the present invention.
(b22-3) placing the exposed substrate into positive photoresist developer for development for 30-50 s, washing with deionized water, and drying with high-purity nitrogen;
(b22-4) heating the substrate at 130-180 ℃ for 110-130 s to form an area to be etched.
The advantage of reheating the substrate here in this embodiment is that the adhesion capability of the remaining photoresist with respect to the sample can be consolidated to form the region to be etched, which facilitates the subsequent etching of the AZO film.
Further, before etching the AZO film, the method further comprises the following steps: and depositing a silicon nitride material on the bottom of the substrate by adopting a plasma enhanced vapor deposition process to form a reflecting layer.
Specifically, the sample is placed in a reverse mode, a Plasma Enhanced Chemical Vapor Deposition (PECVD) process is adopted at the temperature of 380-420 ℃, silicon nitride with the thickness of 70-80nm is deposited on the other surface of the substrate to serve as a reflecting layer, and the reflecting layer has a strong reflecting effect on light.
(b23) And etching the area to be etched by using dilute hydrochloric acid, and stripping and removing photoresist to form the AZO film electrode.
Specifically, the volume ratio of hydrochloric acid to water is 1: and etching the AZO film by 100 parts of dilute hydrochloric acid solution. The AZO film exposed to the solution quickly dissolved in the dilute hydrochloric acid solution, and the photoresist-covered portion of the silicon carbide wafer remained.
And stripping and removing the photoresist from the substrate to form the AZO thin film electrode.
(c) Manufacturing a metal electrode on the AZO film electrode;
further, step (c) may include:
(c1) forming a metal electrode to-be-grown region on the surface of the substrate by utilizing a photoetching process;
specifically, step (c1) may include:
(c11) uniformly spin-coating photoresist on the surface of the substrate;
specifically, in the synchronization step (b21), the sample is placed on the rotating disk of the spin coater, the AZO film electrode is faced upward, and a thin layer of photoresist of uniform thickness is formed on the AZO film electrode and the substrate.
(c12) The pattern of the entire substrate and the second reticle is aligned using an optical exposure system and then irradiated with ultraviolet light to expose the substrate.
In this embodiment, the pattern of the second mask is a specific position for manufacturing the metal electrode, please refer to fig. 3, and fig. 3 is a schematic shape diagram of the second mask provided in the embodiment of the present invention.
(c13) And (3) placing the exposed substrate into positive photoresist developer for development for 30-50 s, then washing with deionized water, and blow-drying with high-purity nitrogen gas to form the region to be grown of the metal electrode.
Since the substrate does not need to be etched when the metal electrode is formed, the substrate may not be heated again. Optionally, the substrate may be reheated to enhance the adhesion of the remaining photoresist to the sample if desired for better results.
(c2) And sputtering an Al metal film on the region to be grown of the metal electrode by adopting a magnetron direct current sputtering process to form the Al metal electrode.
Specifically, step (c2) may include:
(c21) selecting a high-purity Al target, and sputtering an Al metal film on the region to be grown of the metal electrode under the condition of back bottom vacuum; wherein the sputtering pressure is 1.2Pa, the sputtering power is 60W, and the sputtering rate is 5 nm/min;
(c22) and removing the photoresist, and forming an Al metal electrode in the region of the metal electrode to be grown.
When a conventional photoconductive switch adopts a metal electrode with a common structure, the electrode can block a part of light which should be irradiated on a substrate under a common condition, so that the utilization rate of light energy is not high, and even the on-resistance of the switch cannot reach an expected value. In the embodiment, the substrate electrode is manufactured by combining the AZO thin-film electrode and the Al metal electrode with smaller volume, so that the maximum light transmission amount of the substrate is increased, the light energy utilization rate is improved, the energy consumption of the light trigger device is reduced, carriers generated by illumination can be effectively collected, and the phenomenon that the carriers are accumulated at the electrode to cause overlarge local electric field to cause breakdown in advance is avoided; meanwhile, the size of the device can be properly reduced according to the actual application requirement, and the on-resistance is reduced.
(d) And vertically and uniformly distributing a plurality of LD optical components on the surface of the silicon carbide substrate or the AZO thin-film electrode to finish the manufacture of the coplanar photoconductive switch.
First, the optical portion of the photoconductive switch is assembled into a patch. Referring to fig. 4, fig. 4 is a schematic structural diagram of an LD optical component according to an embodiment of the present invention, which includes an optical waveguide medium 41, an electro-optical modulator 42, and an LD-based optical triggering device 43.
Specifically, the optical waveguide medium 41 is adjusted to the same size as the electro-optical modulator 42, and is uniformly attached to both ends of the electro-optical modulator 42, and the LD-based optical triggering device 43 is closely attached to the optical waveguide medium at one end thereof, thereby completing the assembly of the optical part.
The LD light pulse triggering device adopted by the embodiment has the advantages of small volume and good portability, is tightly attached to the optical waveguide medium, can be rapidly modulated after light triggering, switches on the switch, and can be relatively rapidly switched off after light disappears, so that the high-efficiency real-time performance of the optical waveguide switch is met.
Further, in the LD driving circuit optical trigger device selected in this embodiment, the driving circuit is as shown in fig. 5, and the stable constant current source laser diode driving circuit is selected in this embodiment, and the circuit includes a reference voltage circuit, a voltage-current conversion circuit, a constant current output circuit, and a feedback circuit to form the LD driving circuit. The constant current effect of the circuit can realize stable output of light trigger.
In addition, the optical waveguide medium which plays a connecting role in the optical part selects a common optical fiber which consists of a fiber core and a cladding, and light is stably transmitted in the optical waveguide medium due to the difference of the refractive indexes of the cladding and the fiber core; the electro-optic modulator in the optical fiber modulates light into frequency and intensity matched with the switch, in this embodiment, laser light needs to be modulated into visible light with a wavelength of 532nm, and the visible light is finally sent to a switch substrate to realize conduction of the photoconductive switch.
And then, directly acting the optical waveguide medium at the other end of the optical parts on the substrate or the AZO thin-film electrode and vertically and uniformly distributing the optical waveguide medium to realize the point distribution of current, and finally finishing the preparation of the coplanar optical switch based on the LD AZO thin-film electrode.
In the embodiment, the light trigger devices are vertically and uniformly distributed on the substrate, so that the light trigger devices are distributed in a dot shape in the electrode area, the current sequentially passes through the laser irradiation point from the anode to the cathode, and the current forms more current wires according to the laser irradiation point, so that the device can bear larger conducting current, and the service life of the photoconductive switch is prolonged. Meanwhile, the optical part device and the photoconductive switch are integrally packaged in the embodiment, so that the assembly link in the production process of the photoconductive switch is saved, the size of the device is integrally reduced, the device is convenient to carry and use, and the device can adapt to strong vibration, impact and other environments.
Example two
On the basis of the first embodiment, the preparation method of the present invention will be further described with reference to the accompanying drawings. Referring to fig. 6a to 6k, fig. 6a to 6k are schematic diagrams of a method for manufacturing a coplanar photoconductive switch based on an LD AZO thin film electrode according to an embodiment of the present invention, where the method includes the following steps:
step 1: selecting the doping concentration of vanadium as 1 multiplied by 1016cm-3The 6H-SiC substrate 601 of (a) is chemically mechanically polished and cleaned to remove surface contaminants, as shown in fig. 6 a.
Step 2: under the vacuum condition, an Al-doped ZnO target is selected to perform radio frequency magnetron sputtering on the surface of the substrate 601, and meanwhile, the silicon carbide substrate is heated and kept at 380-420 ℃. After a certain period of sputtering, a 200nm thick film 602 of AZO was formed on the silicon carbide substrate, as shown in fig. 6 b.
And step 3: uniformly spin-coating a photoresist 603 on the AZO film 602 by using a spin coater, as shown in fig. 6 c; wherein the rotating speed of the rotating disc of the spin coater is 4000rpm, and the rotating time is 20 s.
And 4, step 4: and etching the photoresist 603 by utilizing a photolithography process to form a region to be etched 604 on the surface of the silicon carbide substrate, as shown in fig. 6 d.
And 5: a plasma enhanced vapor deposition process is used to deposit a silicon nitride material on the bottom of the substrate 601 to form a reflective layer 605, as shown in fig. 6 e.
Step 6: and etching the area to be etched 604, and stripping and removing the residual glue on the AZO film 602 to form an AZO film electrode 606, as shown in FIG. 6 f.
And 7: photoresist 607 is uniformly spin-coated on the AZO thin film electrode 606 and the substrate 601 by using a spin coater as shown in fig. 6 g.
And 8: the photoresist 607 is etched by a photolithography process to form the metal electrode to-be-grown region 608, as shown in fig. 6 h.
And step 9: and sputtering an Al metal film 609 on the to-be-grown region 608 of the metal electrode by adopting a magnetron direct current sputtering process, as shown in FIG. 6 i.
Step 10: and removing the photoresist, and forming an Al metal electrode 610 in the region where the metal electrode is to be grown, as shown in fig. 6 j.
Step 11: several LD optical members 611 are vertically and uniformly distributed on the surface of the silicon carbide substrate or the AZO thin film electrode, as shown in fig. 6 k.
And finishing the manufacture of the coplanar photoconductive switch based on the LD AZO film electrode.
EXAMPLE III
Fig. 7 is a schematic structural diagram of an coplanar photoconductive switch based on an LD AZO thin film electrode according to an embodiment of the present invention, and fig. 7 is a schematic structural diagram of an coplanar photoconductive switch based on an LD AZO thin film electrode, including:
the reflective layer 1, the silicon carbide substrate 2, the AZO thin-film electrode 3, the metal electrode 4 and the optical part 5; the optical portion 5 includes an optical waveguide medium 51, an electro-optical modulator 52, and an LD-based optical triggering device 53; the coplanar optical switch is prepared by the method of the first embodiment or the second embodiment.
The photoconductive switch provided by the embodiment can be used for a compact pulse power system. In special applications such as dielectric wall accelerators, the design of pulse power systems is required to be as compact and portable as possible, and fast switching of switches can be realized. Inter-stage switches are required to have low inductance, resistance state capable of fast switching and precise control, and are therefore often implemented using photoconductive switches. The embodiment closely matches the stacked transmission line system energy storage, switch switching, pulse shaping and other modules and assembles the stacked transmission line system energy storage, switch switching, pulse shaping and other modules with the substrate part to be placed in the same space, so that the volume and the weight are minimized.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. A method for preparing a coplanar photoconductive switch based on an LD AZO film electrode is characterized by comprising the following steps:
(a) providing a silicon carbide substrate;
(b) manufacturing an AZO film electrode on the surface of the silicon carbide substrate;
(c) manufacturing a metal electrode on the AZO film electrode;
(d) and vertically and uniformly distributing a plurality of LD optical components on the surface of the silicon carbide substrate or the AZO thin-film electrode to finish the manufacture of the coplanar photoconductive switch.
2. The production method according to claim 1, wherein the silicon carbide substrate is a 6H-SiC substrate having a vanadium dopant.
3. The method of claim 1, wherein step (b) comprises:
(b1) sputtering an AZO film on the surface of the silicon carbide substrate by utilizing a magnetron sputtering process under a vacuum condition;
(b2) and etching the AZO film to form an AZO film electrode.
4. The method of claim 3, wherein step (b2) includes:
(b21) uniformly spin-coating photoresist on the AZO film;
(b22) etching the photoresist by utilizing a photoetching process to form a region to be etched on the surface of the silicon carbide substrate;
(b23) and etching the area to be etched by using dilute hydrochloric acid, and stripping and removing photoresist to form the AZO film electrode.
5. The method of claim 4, wherein step (b22) includes:
(b22-1) heating the substrate coated with the photoresist at a high temperature of 130-180 ℃ for 110-130 s;
(b22-2) aligning the pattern of the entire substrate and the first reticle using an optical exposure system, and then irradiating with ultraviolet light to expose the substrate;
(b22-3) placing the exposed substrate into positive photoresist developer for development for 30-50 s, washing with deionized water, and drying with high-purity nitrogen;
(b22-4) heating the substrate at 130-180 ℃ for 110-130 s to form an area to be etched.
6. The method of claim 4, wherein after step (b22) and before step (b23), further comprising:
and depositing a silicon nitride material on the bottom of the substrate by adopting a plasma enhanced vapor deposition process to form a reflecting layer.
7. The method of claim 1, wherein step (c) comprises:
(c1) forming a metal electrode to-be-grown region on the surface of the substrate by utilizing a photoetching process;
(c2) and sputtering an Al metal film on the region to be grown of the metal electrode by adopting a magnetron direct current sputtering process to form the Al metal electrode.
8. The method of claim 7, wherein step (c1) comprises:
(c11) uniformly spin-coating photoresist on the surface of the substrate;
(c12) calibrating the patterns of the whole substrate and the second mask plate by using an optical exposure system, and irradiating the patterns by using ultraviolet light to expose the substrate;
(c13) and (3) placing the exposed substrate into positive photoresist developer for development for 30-50 s, then washing with deionized water, and blow-drying with high-purity nitrogen gas to form the region to be grown of the metal electrode.
9. The method of claim 7, wherein step (c2) comprises:
(c21) selecting a high-purity Al target, and sputtering an Al metal film on the region to be grown of the metal electrode under the condition of back bottom vacuum; wherein the sputtering pressure is 1.2Pa, the sputtering power is 60W, and the sputtering rate is 5 nm/min;
(c22) and removing the photoresist, and forming an Al metal electrode in the region of the metal electrode to be grown.
10. A coplanar photoconductive switch based on LD AZO film electrodes is characterized by comprising: the device comprises a reflecting layer (1), a silicon carbide substrate (2), an AZO thin-film electrode (3), a metal electrode (4) and an optical part (5); the optical part (5) comprises an optical waveguide medium (51), an electro-optical modulator (52) and an LD-based optical triggering device (53); wherein the coplanar photoconductive switch is prepared by the method of any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010006153.2A CN113078238A (en) | 2020-01-03 | 2020-01-03 | Same-plane photoconductive switch based on LD AZO film electrode and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010006153.2A CN113078238A (en) | 2020-01-03 | 2020-01-03 | Same-plane photoconductive switch based on LD AZO film electrode and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113078238A true CN113078238A (en) | 2021-07-06 |
Family
ID=76608371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010006153.2A Pending CN113078238A (en) | 2020-01-03 | 2020-01-03 | Same-plane photoconductive switch based on LD AZO film electrode and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113078238A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023245915A1 (en) * | 2022-06-23 | 2023-12-28 | 中科芯(苏州)微电子科技有限公司 | High voltage-withstand and low resistance pulse power photoconductive switch |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120098607A1 (en) * | 2010-10-21 | 2012-04-26 | Tatoian James Z | Modular microwave source |
| CN102945889A (en) * | 2012-12-07 | 2013-02-27 | 东莞市五峰科技有限公司 | Laser device and photoconductive semiconductor switch structure |
| CN103022220A (en) * | 2011-09-21 | 2013-04-03 | 中国科学院上海硅酸盐研究所 | Photoconductive switch high in withstand voltage and low in on resistance and method for manufacturing same |
| CN106910795A (en) * | 2017-03-15 | 2017-06-30 | 西安电子科技大学 | Antarafacial type photoconductive switch based on indium tin oxide transparency electrode and preparation method thereof |
-
2020
- 2020-01-03 CN CN202010006153.2A patent/CN113078238A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120098607A1 (en) * | 2010-10-21 | 2012-04-26 | Tatoian James Z | Modular microwave source |
| CN103022220A (en) * | 2011-09-21 | 2013-04-03 | 中国科学院上海硅酸盐研究所 | Photoconductive switch high in withstand voltage and low in on resistance and method for manufacturing same |
| CN102945889A (en) * | 2012-12-07 | 2013-02-27 | 东莞市五峰科技有限公司 | Laser device and photoconductive semiconductor switch structure |
| CN106910795A (en) * | 2017-03-15 | 2017-06-30 | 西安电子科技大学 | Antarafacial type photoconductive switch based on indium tin oxide transparency electrode and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023245915A1 (en) * | 2022-06-23 | 2023-12-28 | 中科芯(苏州)微电子科技有限公司 | High voltage-withstand and low resistance pulse power photoconductive switch |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101604717B (en) | Vertical GaN-based LED chip and manufacture method thereof | |
| CN108922950B (en) | High-brightness flip LED chip and manufacturing method thereof | |
| CN101355118A (en) | Method for preparing GaN power type LED using optical compound film as electrode | |
| CN101355119B (en) | Method for preparing vertical structure LED using whole optical film system | |
| CN108987545A (en) | One kind being based on GaN micro wire array light-emitting diode and preparation method | |
| CN101771116B (en) | Manufacturing method of light emitting diode with vertical structure | |
| US20180122996A1 (en) | LED Flip-Chip Structure | |
| CN110265864B (en) | Preparation method of GaN-based vertical cavity surface emitting laser | |
| KR20050071238A (en) | High brightess lighting device and manufacturing method thereof | |
| US9076923B2 (en) | Light-emitting device manufacturing method | |
| WO2014105403A1 (en) | High performance light emitting diode | |
| CN107808819A (en) | A kind of liquid graphene is applied to the method for GaN base material and device | |
| CN105679895A (en) | Preparation method of vertical ultraviolet LED chip | |
| CN113078238A (en) | Same-plane photoconductive switch based on LD AZO film electrode and preparation method thereof | |
| CN108878616A (en) | A kind of flip LED chips and preparation method thereof for backlight | |
| US20130334551A1 (en) | Light-emitting device and method for manufacturing the same | |
| CN112968082B (en) | Manufacturing method of light-emitting device structure, display back plate and display device | |
| CN101212008A (en) | Electroluminescent device and method for production thereof | |
| CN116387428B (en) | LED chip preparation method | |
| CN116207202A (en) | Preparation method of high-voltage miniature light-emitting device | |
| CN103647010A (en) | Manufacturing method of high power LED chip | |
| CN110176525A (en) | Sub-wavelength light emitting diode with vertical structure and preparation method thereof | |
| CN100375304C (en) | Semiconductor LED structure with high extracting efficiency and its preparing method | |
| KR100792823B1 (en) | Light emitting device and manufacturing method thereof | |
| US5196366A (en) | Method of manufacturing electric devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210706 |