CN113067252A - 用于激光传输可寻址阵列的应用、方法和系统 - Google Patents
用于激光传输可寻址阵列的应用、方法和系统 Download PDFInfo
- Publication number
- CN113067252A CN113067252A CN202110334054.1A CN202110334054A CN113067252A CN 113067252 A CN113067252 A CN 113067252A CN 202110334054 A CN202110334054 A CN 202110334054A CN 113067252 A CN113067252 A CN 113067252A
- Authority
- CN
- China
- Prior art keywords
- laser
- brightness
- raman
- laser beam
- blue
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 42
- 238000003491 array Methods 0.000 title abstract description 15
- 238000000429 assembly Methods 0.000 claims abstract description 21
- 230000000712 assembly Effects 0.000 claims abstract description 21
- 239000000835 fiber Substances 0.000 claims description 102
- 238000001069 Raman spectroscopy Methods 0.000 claims description 90
- 239000013307 optical fiber Substances 0.000 claims description 90
- 239000000843 powder Substances 0.000 claims description 79
- 239000013078 crystal Substances 0.000 claims description 25
- 239000013077 target material Substances 0.000 claims description 20
- 238000005086 pumping Methods 0.000 claims description 17
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 17
- 150000002910 rare earth metals Chemical class 0.000 claims description 16
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 230000033001 locomotion Effects 0.000 claims description 10
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 9
- 229910003460 diamond Inorganic materials 0.000 claims description 8
- 239000010432 diamond Substances 0.000 claims description 8
- 230000005484 gravity Effects 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 6
- 229910052775 Thulium Inorganic materials 0.000 claims description 5
- 230000009977 dual effect Effects 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- 229910009372 YVO4 Inorganic materials 0.000 claims description 4
- 238000003384 imaging method Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 3
- 230000001902 propagating effect Effects 0.000 claims description 3
- 238000007514 turning Methods 0.000 claims description 2
- 238000003754 machining Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 26
- 239000000047 product Substances 0.000 description 16
- 230000003287 optical effect Effects 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 239000000654 additive Substances 0.000 description 10
- 230000000996 additive effect Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- 230000010287 polarization Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- -1 Thulium (Thulium) rare earth Chemical class 0.000 description 6
- 238000002679 ablation Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000010146 3D printing Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000012768 molten material Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- COQOFRFYIDPFFH-UHFFFAOYSA-N [K].[Gd] Chemical compound [K].[Gd] COQOFRFYIDPFFH-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 239000000289 melt material Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0905—Dividing and/or superposing multiple light beams
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0916—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers
- G02B27/0922—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers the semiconductor light source comprising an array of light emitters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
- G02B27/0977—Reflective elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/108—Beam splitting or combining systems for sampling a portion of a beam or combining a small beam in a larger one, e.g. wherein the area ratio or power ratio of the divided beams significantly differs from unity, without spectral selectivity
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/02—Optical fibres with cladding with or without a coating
- G02B6/02042—Multicore optical fibres
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/04—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings formed by bundles of fibres
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/30—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects
- H01S3/302—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects in an optical fibre
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
- H01S5/405—Two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/30—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02251—Out-coupling of light using optical fibres
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02255—Out-coupling of light using beam deflecting elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Lasers (AREA)
- Optical Couplings Of Light Guides (AREA)
- Laser Beam Processing (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Semiconductor Lasers (AREA)
- Powder Metallurgy (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562193047P | 2015-07-15 | 2015-07-15 | |
| US62/193,047 | 2015-07-15 | ||
| CN201680041725.2A CN107851970B (zh) | 2015-07-15 | 2016-07-14 | 用于激光传输可寻址阵列的应用、方法和系统 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680041725.2A Division CN107851970B (zh) | 2015-07-15 | 2016-07-14 | 用于激光传输可寻址阵列的应用、方法和系统 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113067252A true CN113067252A (zh) | 2021-07-02 |
Family
ID=57757621
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680041725.2A Expired - Fee Related CN107851970B (zh) | 2015-07-15 | 2016-07-14 | 用于激光传输可寻址阵列的应用、方法和系统 |
| CN202110334054.1A Pending CN113067252A (zh) | 2015-07-15 | 2016-07-14 | 用于激光传输可寻址阵列的应用、方法和系统 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680041725.2A Expired - Fee Related CN107851970B (zh) | 2015-07-15 | 2016-07-14 | 用于激光传输可寻址阵列的应用、方法和系统 |
Country Status (7)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114888303A (zh) * | 2022-05-09 | 2022-08-12 | 广东粤港澳大湾区硬科技创新研究院 | 一种蓝色激光增材制造装置 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20230042412A (ko) * | 2015-07-15 | 2023-03-28 | 누부루 인크. | 레이저 전달 어드레스 가능한 어레이를 위한 용례, 방법 및 시스템 |
| CN113745973A (zh) * | 2017-06-13 | 2021-12-03 | 努布鲁有限公司 | 高密集波长束组合激光系统 |
| IT201800010009A1 (it) * | 2018-11-02 | 2020-05-02 | Quanta System Spa | Sistema di trasporto di un fascio laser |
| CN111694160A (zh) * | 2019-03-13 | 2020-09-22 | 深圳市联赢激光股份有限公司 | 一种激光光源装置 |
| US12259317B2 (en) * | 2019-08-02 | 2025-03-25 | Ushio Denki Kabushiki Kaisha | Broadband pulsed light source apparatus and spectroscopic measurement method |
| CN113391266B (zh) * | 2021-05-28 | 2023-04-18 | 南京航空航天大学 | 基于非圆多嵌套阵降维子空间数据融合的直接定位方法 |
| US20250096534A1 (en) * | 2021-07-26 | 2025-03-20 | Daylight Solutions, Inc. | High power laser assembly with accurate pointing in the far field |
| WO2023146431A1 (ru) * | 2022-01-28 | 2023-08-03 | Федеральное Государственное Унитарное Предприятие "Российский Федеральный Ядерный Центр - Всероссийский Научно - Исследовательский Институт Технической Физики Имени Академика Е.И. Забабахина" | Волоконный лазер для медицины |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030048819A1 (en) * | 2001-09-10 | 2003-03-13 | Fuji Photo Film Co., Ltd. | Laser diode array, laser device, wave-coupling laser source, and exposure device |
| US20030052105A1 (en) * | 2001-09-10 | 2003-03-20 | Fuji Photo Film Co., Ltd. | Laser sintering apparatus |
| CN102388512A (zh) * | 2009-05-11 | 2012-03-21 | Ofs菲特尔有限责任公司 | 基于滤波器光纤的级联拉曼光纤激光器系统 |
| US20120105968A1 (en) * | 2010-10-31 | 2012-05-03 | TeraDiode, Inc. | Compact Interdependent Optical Element Wavelength Beam Combining Laser System and Method |
| CN102468602A (zh) * | 2010-11-17 | 2012-05-23 | 北京中视中科光电技术有限公司 | 一种半导体激光光源 |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5729568A (en) * | 1993-01-22 | 1998-03-17 | Deutsche Forschungsanstalt Fuer Luft-Und Raumfahrt E.V. | Power-controlled, fractal laser system |
| DE19780124B4 (de) * | 1996-02-23 | 2007-02-15 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Anordnung zur Formung des geometrischen Querschnitts mehrerer Festkörper- und/oder Halbleiterlaser |
| US5864644A (en) * | 1997-07-21 | 1999-01-26 | Lucent Technologies Inc. | Tapered fiber bundles for coupling light into and out of cladding-pumped fiber devices |
| JP3831082B2 (ja) * | 1997-08-27 | 2006-10-11 | 浜松ホトニクス株式会社 | 集光装置 |
| US5987043A (en) * | 1997-11-12 | 1999-11-16 | Opto Power Corp. | Laser diode arrays with offset components |
| US6222973B1 (en) * | 1999-01-15 | 2001-04-24 | D-Star Technologies, Inc. | Fabrication of refractive index patterns in optical fibers having protective optical coatings |
| JP2003158332A (ja) * | 2001-09-10 | 2003-05-30 | Fuji Photo Film Co Ltd | レーザーダイオードアレイ、レーザー装置、合波レーザー光源および露光装置 |
| US6714581B2 (en) * | 2001-10-01 | 2004-03-30 | Christopher J. Corcoran | Compact phase locked laser array and related techniques |
| US7830945B2 (en) * | 2002-07-10 | 2010-11-09 | Fujifilm Corporation | Laser apparatus in which laser diodes and corresponding collimator lenses are fixed to block, and fiber module in which laser apparatus is coupled to optical fiber |
| US7006549B2 (en) * | 2003-06-11 | 2006-02-28 | Coherent, Inc. | Apparatus for reducing spacing of beams delivered by stacked diode-laser bars |
| CA2569517A1 (en) * | 2004-06-01 | 2005-12-15 | Trumpf Photonics Inc. | Laser diode array mount and stepped mirror for shaping of a symmetric laser beam |
| JP2007103704A (ja) * | 2005-10-05 | 2007-04-19 | Nichia Chem Ind Ltd | 発光装置、レーザディスプレイ、内視鏡 |
| FR2893872B1 (fr) * | 2005-11-25 | 2008-10-17 | Air Liquide | Procede de coupage avec un laser a fibre d'acier c-mn |
| JP2007317871A (ja) * | 2006-05-25 | 2007-12-06 | Sony Corp | レーザ装置 |
| US7515346B2 (en) * | 2006-07-18 | 2009-04-07 | Coherent, Inc. | High power and high brightness diode-laser array for material processing applications |
| JP4916392B2 (ja) * | 2007-06-26 | 2012-04-11 | パナソニック株式会社 | 三次元形状造形物の製造方法及び製造装置 |
| US20090122272A1 (en) * | 2007-11-09 | 2009-05-14 | Silverstein Barry D | Projection apparatus using solid-state light source array |
| US7948680B2 (en) * | 2007-12-12 | 2011-05-24 | Northrop Grumman Systems Corporation | Spectral beam combination using broad bandwidth lasers |
| JP5905723B2 (ja) * | 2008-11-04 | 2016-04-20 | マサチューセッツ インスティテュート オブ テクノロジー | ２次元レーザ素子の外部キャビティ１次元多波長ビーム結合 |
| JP5375532B2 (ja) * | 2009-11-11 | 2013-12-25 | コニカミノルタ株式会社 | 集積光源、プロジェクタ装置、及びモバイル機器 |
| US20110305256A1 (en) * | 2010-03-05 | 2011-12-15 | TeraDiode, Inc. | Wavelength beam combining based laser pumps |
| WO2011109760A2 (en) * | 2010-03-05 | 2011-09-09 | TeraDiode, Inc. | Wavelength beam combining system and method |
| US20130162952A1 (en) * | 2010-12-07 | 2013-06-27 | Laser Light Engines, Inc. | Multiple Laser Projection System |
| US9595813B2 (en) * | 2011-01-24 | 2017-03-14 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a substrate member |
| US9025635B2 (en) * | 2011-01-24 | 2015-05-05 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a support member |
| US9014220B2 (en) * | 2011-03-10 | 2015-04-21 | Coherent, Inc. | High-power CW fiber-laser |
| US8824513B2 (en) * | 2011-06-14 | 2014-09-02 | Bae Systems Information And Electronic Systems Integration Inc. | Method for beam combination by seeding stimulated brillouin scattering in optical fiber |
| DE102012100233B4 (de) * | 2012-01-12 | 2014-05-15 | Schott Ag | Hochtransmittive Gläser mit hoher Solarisationsbeständigkeit, ihre Verwendung und Verfahren zu ihrer Herstellung |
| JP5764152B2 (ja) * | 2013-02-13 | 2015-08-12 | 株式会社フジクラ | 半導体レーザ装置 |
| JP6036479B2 (ja) * | 2013-03-28 | 2016-11-30 | ウシオ電機株式会社 | 半導体レーザ装置 |
| CA2910559C (en) * | 2013-04-29 | 2021-06-01 | Mark S. Zediker | Devices, systems, and methods for three-dimensional printing |
| US9306369B2 (en) * | 2013-11-22 | 2016-04-05 | Trumpf Laser Gmbh | Wavelength selective external resonator and beam combining system for dense wavelength beam combining laser |
| KR20230042412A (ko) * | 2015-07-15 | 2023-03-28 | 누부루 인크. | 레이저 전달 어드레스 가능한 어레이를 위한 용례, 방법 및 시스템 |
-
2016
- 2016-07-14 KR KR1020237009474A patent/KR20230042412A/ko not_active Ceased
- 2016-07-14 EP EP16825215.3A patent/EP3323179A4/en not_active Withdrawn
- 2016-07-14 CA CA2992464A patent/CA2992464A1/en active Pending
- 2016-07-14 KR KR1020187003763A patent/KR102370083B1/ko active Active
- 2016-07-14 RU RU2020111447A patent/RU2735581C2/ru active
- 2016-07-14 JP JP2018501225A patent/JP2018530768A/ja active Pending
- 2016-07-14 CN CN201680041725.2A patent/CN107851970B/zh not_active Expired - Fee Related
- 2016-07-14 KR KR1020227006597A patent/KR102513216B1/ko active Active
- 2016-07-14 CN CN202110334054.1A patent/CN113067252A/zh active Pending
- 2016-07-14 WO PCT/US2016/042363 patent/WO2017011706A1/en active Application Filing
- 2016-07-14 RU RU2018105599A patent/RU2719337C2/ru active
-
2020
- 2020-12-17 JP JP2020209313A patent/JP2021073681A/ja active Pending
-
2023
- 2023-11-10 JP JP2023192275A patent/JP2024020355A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030048819A1 (en) * | 2001-09-10 | 2003-03-13 | Fuji Photo Film Co., Ltd. | Laser diode array, laser device, wave-coupling laser source, and exposure device |
| US20030052105A1 (en) * | 2001-09-10 | 2003-03-20 | Fuji Photo Film Co., Ltd. | Laser sintering apparatus |
| CN102388512A (zh) * | 2009-05-11 | 2012-03-21 | Ofs菲特尔有限责任公司 | 基于滤波器光纤的级联拉曼光纤激光器系统 |
| US20120105968A1 (en) * | 2010-10-31 | 2012-05-03 | TeraDiode, Inc. | Compact Interdependent Optical Element Wavelength Beam Combining Laser System and Method |
| CN102468602A (zh) * | 2010-11-17 | 2012-05-23 | 北京中视中科光电技术有限公司 | 一种半导体激光光源 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114888303A (zh) * | 2022-05-09 | 2022-08-12 | 广东粤港澳大湾区硬科技创新研究院 | 一种蓝色激光增材制造装置 |
| CN114888303B (zh) * | 2022-05-09 | 2024-03-15 | 广东粤港澳大湾区硬科技创新研究院 | 一种蓝色激光增材制造装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102513216B1 (ko) | 2023-03-22 |
| CN107851970B (zh) | 2021-04-27 |
| RU2020111447A3 (enrdf_load_stackoverflow) | 2020-10-02 |
| WO2017011706A1 (en) | 2017-01-19 |
| RU2020111447A (ru) | 2020-04-22 |
| CA2992464A1 (en) | 2017-01-19 |
| EP3323179A1 (en) | 2018-05-23 |
| JP2018530768A (ja) | 2018-10-18 |
| KR20180030588A (ko) | 2018-03-23 |
| KR20220029781A (ko) | 2022-03-08 |
| RU2719337C2 (ru) | 2020-04-17 |
| RU2018105599A3 (enrdf_load_stackoverflow) | 2019-08-15 |
| JP2024020355A (ja) | 2024-02-14 |
| EP3323179A4 (en) | 2019-06-19 |
| KR20230042412A (ko) | 2023-03-28 |
| JP2021073681A (ja) | 2021-05-13 |
| KR102370083B1 (ko) | 2022-03-03 |
| CN107851970A (zh) | 2018-03-27 |
| RU2735581C2 (ru) | 2020-11-03 |
| RU2018105599A (ru) | 2019-08-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11811196B2 (en) | Applications, methods and systems for a laser deliver addressable array | |
| CN107851970B (zh) | 用于激光传输可寻址阵列的应用、方法和系统 | |
| US20200086388A1 (en) | Additive Manufacturing System with Addressable Array of Lasers and Real Time Feedback Control of each Source | |
| US10418774B2 (en) | Spectrally multiplexing diode pump modules to improve brightness | |
| KR102747524B1 (ko) | 주소지정 가능한 레이저 어레이 및 각각의 소스에 대한 실시간 피드백 제어를 갖춘 적층 제작 시스템 | |
| US20200333613A1 (en) | Wavelength beam combining laser systems utilizing lens roll for chief ray focusing | |
| JP5621318B2 (ja) | 半導体レーザモジュールおよびこれを用いたファイバレーザ | |
| Karlsen et al. | 100-W 105-um 0.15 NA fiber coupled laser diode module | |
| KR20160003778A (ko) | 3차원 인쇄 장치, 시스템 및 방법 | |
| JP2016082219A (ja) | 半導体レーザ発振器 | |
| Wang et al. | Kilowatt line beam from a 905nm pulsed diode laser module for LiDAR applications | |
| JP2006024860A (ja) | レーザ照射装置及びレーザ照射におけるレンズ調整方法 | |
| CN120587640A (zh) | 一种复合激光加工系统及其控制方法 | |
| Hecht | PHOTONIC FRONTIERS: DIRECT LASER DIODES: Making direct laser diodes shine more brightly Direct laser diode output, delivered in a line beam or through an optical fiber, is attractive for applications ranging from heat treating and cladding to welding. But the beam quality needed to cut metals remains a tough challenge. | |
| Price et al. | High brightness diode laser module development at nLIGHT Photonics | |
| Bachmann | Diode Laser Systems |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20210702 |
|
| WD01 | Invention patent application deemed withdrawn after publication |