CN113035943A - HEMT device with field plate structure and preparation method thereof - Google Patents
HEMT device with field plate structure and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 122
- 239000002184 metal Substances 0.000 claims abstract description 122
- 239000002131 composite material Substances 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims description 51
- 238000002161 passivation Methods 0.000 claims description 30
- 238000005530 etching Methods 0.000 claims description 26
- 230000004888 barrier function Effects 0.000 claims description 24
- 239000010931 gold Substances 0.000 claims description 24
- 239000010936 titanium Substances 0.000 claims description 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- 238000000059 patterning Methods 0.000 claims description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
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- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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Abstract
The invention provides a HEMT device with a field plate structure and a preparation method thereof, wherein the structure comprises: the HEMT device comprises a gate electrode, a source field plate and a floating field plate, wherein the source field plate and the floating field plate are arranged between the gate electrode and the drain electrode, the source field plate is close to the gate electrode, the floating field plate is close to the drain electrode, and the source field plate is in equipotential electrical connection with a source interconnection metal structure. The source field plate and the floating field plate are arranged to form a composite field plate structure between the grid electrode and the drain electrode of the HEMT device, and the electric field concentration points which are originally positioned at the edge of the grid electrode and the edge of the drain electrode are transferred to the insulating layer between the source field plate and the floating field plate, so that the electric field distribution inside the whole HEMT device is optimized, the electric field change gradient is more gradual, and the breakdown voltage of the device is improved. In addition, the additional parasitic capacitance introduced by directly extending the source field plate to cover the gate electrode is avoided. And finally, the source electrode interconnection metal layer, the drain electrode interconnection metal layer, the source field plate and the floating field plate are formed at the same time, and no additional process step is needed.
Description
Technical Field
The invention belongs to the field of semiconductor power electronic devices, and particularly relates to a HEMT device with a field plate structure and a preparation method thereof.
Background
Nowadays, human production and life are not free from electric power, and with the improvement of energy-saving consciousness of people, power semiconductor devices with high conversion efficiency become hot spots of domestic and foreign research. The power semiconductor device is widely applied to household appliances, power converters, industrial control and the like, and different power semiconductor devices are adopted under different rated voltages and currents. High Electron Mobility Transistors (HEMTs) are hot spots developed at home and abroad, have made breakthroughs in many fields, and have a wide application prospect particularly in the aspects of High temperature, High power, High frequency and the like.
HEMTs, in particular gallium nitride (GaN) and aluminum gallium nitride (AlGaN), have heterostructures at the interface of which a conducting channel, in particular a two-dimensional electron gas (2DEG) channel, can be formed. For example, HEMTs are used as high frequency switches and power switches due to their high breakdown threshold and high electron mobility and high charge carrier density in their conducting channels; in addition, high current densities in the conductive channel of a HEMT provide low on-state resistance (or simply RON) of the conductive channel, and HEMTs are widely appreciated.
In the operating state of a HEMT device with high source-drain voltage, the electric field at the edges of a grid and a drain is too concentrated to form a strong electric field peak, and the local strong electric field can cause the problems of material breakdown, device failure and the like. The electric field peak value is reduced, so that the breakdown voltage of the device is improved, the electronic effect of a strong electric field is weakened, the current collapse is restrained, and the output power and PAE (power added benefit) are improved. At present, a field plate structure is commonly used for improving the electric field distribution inside a device, and existing field plates are mainly divided into a source field plate and a grid field plate. As shown in fig. 1, the structure of the HEMT device includes a trench layer 100, a barrier layer 101, a source electrode 102, a drain electrode 103, a gate electrode 104 and a passivation layer 107, wherein the gate field plate 105 is formed on the gate electrode 104 and extends toward the drain electrode 103, the gate field plate 105 mainly improves a virtual gate effect, and has a certain effect on device current collapse, but the improvement on electric field concentration at the edge of the gate electrode is very limited, and the gate field plate 105 has a great influence on the current capability of the HEMT device; as shown in fig. 2, the source field plate 106 is led out from the source electrode 102 and extends toward the drain electrode 103 in the active region where the HEMT device is located, and extends to exceed the gate electrode 104, and the source field plate 106 has a significant effect on improving the electric field distribution concentration at the edge of the gate electrode 104, however, since the source field plate 106 is led out directly from the source electrode 102 and directly covers the right edge of the gate electrode 104 above the active region, such a structure may introduce a large parasitic capacitance between the gate electrode 104 and the source electrode 102, thereby affecting the switching characteristics of the HEMT device.
Disclosure of Invention
In view of the above drawbacks of the prior art, an object of the present invention is to provide an HEMT device having a field plate structure and a method for manufacturing the same, which are used to solve the problems that in the prior art, a gate field plate is used to improve the electric field distribution between the gates and the drains of the HEMT device, and the electric field improvement effect does not significantly affect the current capability of the HEMT device; and the source field plate is adopted to improve the electric field distribution between the grid and the drain of the HEMT device, and the problem of larger parasitic capacitance between grid source electrodes and the like can be caused.
To achieve the above and other related objects, the present invention provides a HEMT device having a field plate structure, including:
the HEMT device, the source electrode, the gate electrode and the drain electrode of the HEMT device are covered with insulating layers;
the source electrode interconnection metal structure is arranged on the insulating layer and penetrates through the insulating layer to be electrically connected with the source electrode;
the drain electrode interconnection metal structure is arranged on the insulating layer and penetrates through the insulating layer to be electrically connected with the drain electrode;
and the composite field plate structure is arranged on the insulating layer and comprises a source field plate and a floating field plate which are arranged between the gate electrode and the drain electrode at intervals, the source field plate is close to the gate electrode and is in equipotential connection with the source electrode interconnection metal structure, and the floating field plate is close to the drain electrode.
Optionally, the HEMT device sequentially includes a channel layer, a barrier layer, and a passivation layer from bottom to top, and the source electrode, the gate electrode, and the drain electrode are all disposed on the passivation layer and penetrate through the passivation layer to contact with the barrier layer.
Optionally, the HEMT device includes an active region and a non-active region, the source interconnection metal structure, the drain interconnection metal structure and the composite field plate structure are disposed in the active region, and the source interconnection metal structure is equipotentially connected to the source field plate through a connection line disposed in the non-active region.
Optionally, a spacing between the source field plate and the floating field plate is greater than or equal to 0.5 μm.
Optionally, the total length of the source field plate and the floating field plate is greater than or equal to 1/4 of the spacing between the gate electrode and the drain electrode, and/or the spacing between the source field plate and the gate electrode is greater than or equal to 1/8 of the spacing between the gate electrode and the drain electrode, and the spacing between the floating field plate and the drain electrode is greater than or equal to 1/4 of the spacing between the gate electrode and the drain electrode.
Optionally, the material of the channel layer includes GaN, the material of the barrier layer includes AlGaN, the material of the passivation layer includes silicon nitride, the material of the source electrode and the drain electrode includes at least one of the group consisting of titanium (Ti), aluminum (Al), nickel (Ni), and gold (Au), the material of the gate electrode includes at least one of titanium (Ti) and gold (Au), the material of the insulating layer includes nitride or oxide, and the material of the source interconnection metal layer, the drain interconnection metal layer, the connection line, the source field plate, and the floating field plate includes at least one of aluminum (Al) and copper (Cu).
Optionally, the source electrode and the drain electrode have a thickness between
The thickness of the gate electrode is between
The thickness of the insulating layer is between
In the meantime.
The invention also provides a preparation method of the HEMT device with the field plate structure, and the preparation method comprises the following steps:
forming an HEMT device, wherein the HEMT device is provided with a source electrode, a drain electrode and a gate electrode;
forming an insulating layer on the HEMT device, wherein the insulating layer covers the source electrode, the drain electrode and the gate electrode;
patterning the insulating layer to form a source contact hole and a drain contact hole which penetrate through the insulating layer;
forming an interconnection metal layer on the insulating layer and patterning the interconnection metal layer to form a source interconnection metal structure, a drain interconnection metal structure and a composite field plate structure, wherein the source interconnection metal structure penetrates through the source contact hole to be electrically connected with the source electrode, the drain interconnection metal structure penetrates through the drain contact hole to be electrically connected with the drain electrode, the composite field plate structure comprises a source field plate and a floating field plate which are arranged between the gate electrode and the drain electrode at intervals, the source field plate is close to the gate electrode and is in equipotential connection with the source interconnection metal structure, and the floating field plate is close to the drain electrode.
Optionally, the step of forming the HEMT device comprises:
sequentially forming a channel layer, a barrier layer and a passivation layer of the HEMT device from bottom to top;
and forming the source electrode, the gate electrode and the drain electrode on the passivation layer, wherein the source electrode, the gate electrode and the drain electrode penetrate through the passivation layer and are in contact with the barrier layer.
Optionally, the step of forming the interconnection metal layer on the insulating layer and patterning the interconnection metal layer further includes:
the HEMT device comprises an active region and a non-active region, wherein the source electrode interconnection metal structure, the drain electrode interconnection metal structure and the composite field plate structure are formed on the active region;
and a connecting wire for realizing equipotential connection between the source field plate of the composite field plate and the source electrode interconnection metal structure is formed on the non-active area.
Optionally, the step of forming the interconnection metal layer on the insulating layer and patterning the interconnection metal layer includes:
depositing metal on the insulating layer, wherein the metal fills the source contact hole and the drain contact hole, and an interconnection metal layer covering the insulating layer is formed;
forming a photoresist layer on the interconnection metal layer, and patterning the photoresist layer to form a source interconnection metal structure etching window pattern, a drain interconnection metal structure etching window pattern and a composite field plate structure etching window pattern in the photoresist layer;
etching the metal interconnection layer by dry etching based on the source electrode interconnection metal structure etching window pattern, the drain electrode interconnection metal structure etching window pattern and the composite field plate structure etching window pattern;
and removing the photoresist layer to form the source electrode interconnection metal structure, the drain electrode interconnection metal structure and the composite field plate structure.
Optionally, a spacing between the source field plate and the floating field plate is greater than or equal to 0.5 μm.
Optionally, a total length of the source field plate and the floating field plate is no less than 1/4 of a spacing between the gate electrode and the drain electrode, and/or. The spacing between the source field plate and the gate electrode is greater than or equal to 1/8 of the spacing between the gate electrode and the drain electrode, and the spacing between the floating field plate and the drain electrode is greater than or equal to 1/4 of the spacing between the gate electrode and the drain electrode.
Optionally, the material of the channel layer includes GaN, the material of the barrier layer includes AlGaN, the material of the passivation layer includes silicon nitride, the material of the source electrode and the drain electrode includes at least one of the group consisting of titanium (Ti), aluminum (Al), nickel (Ni), and gold (Au), the material of the gate electrode includes at least one of titanium (Ti) and gold (Au), the material of the insulating layer includes nitride or oxide, and the material of the source interconnection metal layer, the drain interconnection metal layer, the connection line, the source field plate, and the floating field plate includes at least one of aluminum (Al) and copper (Cu).
As described above, the present invention provides a HEMT device having a field plate structure and a method for manufacturing the same, in which a source field plate and a floating field plate are provided to form a composite field plate structure between a gate electrode and a drain electrode of the HEMT device. On one hand, the source field plate is electrically connected with the source electrode, and a zero potential body is provided in the HEMT device, so that the electric field peak value at the edge of the gate electrode can be effectively reduced; on the other hand, the floating field plate is approximately equal to the potential of the drain electrode due to charge induction, and the electric field peak value at the edge of the drain electrode is effectively reduced. Under the combined action of the source field plate and the floating field plate, the electric field concentration points which are originally positioned at the edge of the gate electrode and the edge of the drain electrode are transferred to the insulating layer between the source field plate and the floating field plate, so that the electric field distribution in the whole HEMT device is optimized, the electric field change gradient is more gradual, and the breakdown voltage of the device is improved. In addition, the source field plate and the floating field plate composite field plate structure are formed while the source electrode interconnection metal layer and the drain electrode interconnection metal layer are formed, extra process steps are not needed, the method is easy to realize, and the manufacturing cost is low.
Drawings
Fig. 1 shows a schematic diagram of a HEMT device with a gate field plate in the prior art.
Fig. 2 shows a schematic diagram of a HEMT device with a source field plate in the prior art.
Fig. 3 to 11 are schematic structural views of steps in the method for manufacturing a HEMT device having a field plate structure according to the present invention, where fig. 4 is a top view of fig. 3, fig. 11 is a top view of fig. 10, and fig. 11 is a schematic structural view of a HEMT device having a field plate structure according to the present invention.
Fig. 12 is a graph showing breakdown characteristics of the composite field plate HEMT device and the field plate-less HEMT device (basic structure), the source field plate HEMT device, and the gate field plate HEMT device.
Fig. 13 is a schematic flow chart illustrating a method for manufacturing a HEMT device having a field plate structure according to the present invention.
Description of the element reference numerals
100 channel layer
101 barrier layer
102 source electrode
103 drain electrode
104 gate electrode
105 grid field plate
106 source field plate
107 passivation layer
40 active region
200 channel layer
201 barrier layer
202 passivation layer
203 source electrode
204 gate electrode
205 drain electrode
206 insulating layer
207 source interconnection metal structure
208 drain interconnect metal structure
209 source field plate
210 floating field plate
211 connecting line
300 photo resist layer
301 contact hole etching window
302 source contact hole
303 drain contact hole
304 interconnect metal layer
305 composite field plate structure etching window pattern
307 source interconnection metal structure etch window pattern
308 etching window pattern of drain interconnected metal structure
Spacing between L1 source field plate and floating field plate
L2 spacing between Gate and Drain electrodes
Spacing between L3 source field plate and gate electrode
Spacing between L4 floating field plate and drain electrode
S1-S5
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 3 to 13. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
Example one
As shown in fig. 10 and 11, the present embodiment provides a HEMT device having a field plate structure, including:
a HEMT device having a source electrode 203, a gate electrode 204 and a drain electrode 205 covered with an insulating layer 206;
a source interconnection metal structure 207 disposed on the insulating layer 206 and electrically connected to the source electrode 203 through the insulating layer 206;
a drain interconnection metal structure 208 disposed on the insulating layer 206 and electrically connected to the drain electrode 205 through the insulating layer 206;
and the composite field plate structure is arranged on the insulating layer 206 and comprises a source field plate 209 and a floating field plate 210 which are arranged between the gate electrode 204 and the drain electrode 205 at intervals, the source field plate 209 is close to the gate electrode 204 and is in equipotential connection with the source interconnection metal structure 207, and the floating field plate 210 is close to the drain electrode 205.
Note here that the gate electrode 204 is shown in the top view of fig. 11 for the sake of easy understanding of the positional relationship between the gate electrode 204 and other structures of the HEMT device, but the gate electrode 204 is not visible in the actual top view.
In the embodiment, a source field plate 209 and a floating field plate 210 form a composite field plate structure between the gate electrode 204 and the drain electrode 205 of the HEMT device. On one hand, the source field plate 209 is in equipotential electrical connection with the source electrode 203, and a zero potential body is provided in the HEMT device, so that the electric field peak value at the edge of the gate electrode 204 can be effectively reduced; on the other hand, the floating field plate 210 will be approximately equal to the potential of the drain electrode 205 due to charge induction, effectively reducing the electric field peak at the edge of the drain electrode 205. Under the combined action of the source field plate 209 and the floating field plate 210, the electric field concentration points originally positioned at the edge of the gate electrode 204 and the edge of the drain electrode 205 are transferred to the insulating layer 206 between the source field plate 209 and the floating field plate 210, so that the electric field distribution in the whole HEMT device is optimized, the electric field variation gradient is more relaxed, and the breakdown voltage of the device is improved.
As shown in fig. 10, as an example, the HEMT device includes a channel layer 200, a barrier layer 201, and a passivation layer 202 in sequence from bottom to top, and the source electrode 203, the gate electrode 204, and the drain electrode 205 are all disposed on the passivation layer 202 and penetrate through the passivation layer 202 to contact the barrier layer 201.
As shown in fig. 11, the HEMT device includes an active region 40 and a non-active region, the source interconnection metal structure 207, the drain interconnection metal structure 208 and the composite field plate structure are disposed in the active region 40, and the source interconnection metal structure 207 is equipotentially connected to the source field plate 209 through a connection line 211 disposed in the non-active region. By connecting the source field plate 209 with the source electrode 203 equipotentially through the connection line 211 of the non-active region, it is avoided that the source field plate 209 extends directly over the gate electrode 204 to introduce additional parasitic capacitance.
As shown in fig. 10 and 11, a distance L1 between the source field plate and the floating field plate is greater than or equal to 0.5 μm, for example. Since the electric field concentration points originally located at the edge of the gate electrode 204 and the edge of the drain electrode 205 can be transferred into the insulating layer 206 between the source field plate 209 and the floating field plate 210 by using the source field plate 209 and the floating field plate 210, the insulating layer 206 may be broken down if the distance L1 between the source field plate 209 and the floating field plate 210 is too small, and when the distance L1 between the source field plate and the floating field plate is set to be greater than or equal to 0.5 μm, the insulating layer 206 can be effectively prevented from being broken down.
As a further example, as shown in fig. 10 and 11, the total length of the source field plate 209 and the floating field plate 210 is greater than or equal to 1/4 of the distance L2 between the gate electrode and the drain electrode.
As a further example, as shown in fig. 10 and 11, a distance L3 between the source field plate and the gate electrode is greater than or equal to 1/8 of a distance L2 between the gate electrode and the drain electrode, and a distance L4 between the floating field plate and the drain electrode is greater than or equal to 1/4 of a distance L2 between the gate electrode and the drain electrode.
As an example, the material of the channel layer 200 includes GaN, the material of the barrier layer 201 includes AlGaN, the material of the passivation layer 202 includes silicon nitride, the material of the source electrode 203 and the drain electrode 205 includes at least one of the group consisting of titanium (Ti), aluminum (Al), nickel (Ni), and gold (Au), the material of the gate electrode 204 includes at least one of titanium (Ti) and gold (Au), the material of the insulating layer 206 includes nitride or oxide, and the material of the source interconnection metal layer 207, the drain interconnection metal layer 208, the connection line 211, the source field plate 209, and the floating field plate 210 includes at least one of aluminum (Al) and copper (Cu). In this embodiment, the material of the channel layer 200 is GaN, the material of the barrier layer 201 is AlGaN, the material of the passivation layer 202 is silicon nitride, and the material of the insulating layer 206 is nitride.
As an example, allThe thickness of the source electrode 203 and the drain electrode 205 is between
The thickness of the gate electrode 204 is between
The thickness of the insulating layer 206 is between
In the meantime.
The inventor conducts simulation research on the distribution condition of the internal electric field of the device under high source leakage voltage by carrying out simulation research on the composite field plate GaN HEMT device, the field plate-free GaN HEMT device, the traditional grid field plate GaN HEMT device, the traditional source field plate GaN HEMT device and the inter-grid-drain single source field plate GaN HEMT device. The edge of a gate electrode of the field plate-free GaN HEMT device has a very high electric field peak point, and the electric field distribution is too concentrated, so that the breakdown voltage is easily reduced due to overlarge electric field change gradient. Although the electric field of the traditional grid field plate GaN HEMT device is transferred to the edge of the field plate under the action of the field plate, the electric field peak value is still very high, the electric field change gradient is still very large, the electric field distribution improvement effect is limited, and the current output capability of the device is reduced by the existence of the grid field plate. The source field plate in the traditional source field plate GaN HEMT device reduces the electric field peak value at the edge of the grid, and forms another smaller peak value point at the edge of the field plate, thereby reducing the gradient of electric field change, improving the breakdown voltage of the device, but the field plate directly covered from the upper part of the grid must introduce extra parasitic capacitance, and influencing the switching characteristic of the device. The single source field plate GaN HEMT device between the grid and the drain also reduces the electric field peak value at the edge of the grid electrode and the gradient of electric field change, but simultaneously causes the electric field peak value point at the edge of the drain electrode. By adopting the composite field plate GaN HEMT device, the composite field plate reduces the peak value of the electric field at the edge of the gate electrode, reduces the electric field variation gradient and simultaneously improves the electric field distribution at the edge of the drain electrode, the electric field distribution in the whole device is more reasonable, the breakdown voltage of the device is greatly improved, and the problem that the traditional source field plate introduces the gate-source parasitic capacitance is avoided.
As shown in fig. 12, it is a breakdown characteristic curve diagram of a composite field plate GaN HEMT device, a field plate-free GaN HEMT device, a conventional gate field plate GaN HEMT device, and a conventional source field plate GaN HEMT device, where the abscissa is drain-source electrode voltage and the ordinate is a logarithmic form of source-drain current, and it can be seen from the diagram that the composite field plate structure between the gate and the drain electrode provided in this embodiment greatly improves breakdown voltage of the HEMT device, and source-drain electrode voltage still does not breakdown at 1500V.
Example two
As shown in fig. 3 to 11 and 13, this embodiment provides a method for manufacturing a HEMT device having a field plate structure, which can be used to manufacture the HEMT device having the field plate structure according to the first embodiment, and the method at least includes steps S1 to S5:
as shown in fig. 3, 4, and 13, step S1 is performed to form a HEMT device having the source electrode 203, the drain electrode 205, and the gate electrode 204.
As an example, the step of forming the HEMT device includes:
sequentially forming a channel layer 200, a barrier layer 201 and a passivation layer 202 of the HEMT device from bottom to top;
the source electrode 203, the gate electrode 204, and the drain electrode 205 are formed on the passivation layer 202, and the source electrode 203, the gate electrode 204, and the drain electrode 205 penetrate through the passivation layer 202 and contact the barrier layer 201.
The HEMT device may be formed using existing general HEMT fabrication processes. For example, after the channel layer 200, the barrier layer 201 and the passivation layer 202 are formed, a metal evaporation method is used to deposit the metal oxide film to a thickness between
The thickness of the source and drain electrode metal between
Then quickly annealing at 750-950 deg.C for 30s to form sourceThe drain electrode is in ohmic contact with the gate electrode.
As an example, the material of the channel layer 200 includes GaN, the material of the barrier layer 201 includes AlGaN, and the material of the passivation layer 202 includes silicon nitride. In this embodiment, the material of the trench layer 200 is GaN, the material of the barrier layer 201 is AlGaN, and the material of the passivation layer 202 is silicon nitride.
For example, the material of the source electrode 203 and the drain electrode 205 includes at least one of the group consisting of titanium (Ti), aluminum (Al), nickel (Ni), and gold (Au), and the material of the gate electrode 204 includes at least one of titanium (Ti) and gold (Au).
As shown in fig. 5 and 13, step S2 is performed to form an insulating layer 206 on the HEMT device, wherein the insulating layer 206 covers the source electrode 203, the drain electrode 205, and the gate electrode 204.
As an example, LPCVD (low pressure chemical vapor deposition process) is adopted to deposit the thickness on the front surface of the HEMT device to be between
The insulating layer 206 in between.
As an example, the material of the insulating layer 206 includes nitride or oxide. For example, it may be silicon nitride or silicon oxide, and in this embodiment, the material of the insulating layer 206 is selected to be silicon nitride.
As shown in fig. 7 and 13, in step S3, the insulating layer 206 is patterned to form a source contact hole 302 and a drain contact hole 303 penetrating the insulating layer 206.
As shown in fig. 6 and 7 as an example, the method for forming the source contact hole 302 and the drain contact hole 303 includes: coating a photoresist layer 300 on the insulating layer 206 and forming a contact hole etching window 301 by photolithography (as shown in fig. 6); based on the contact hole etching window 301, RIE is used to dry etch the insulating layer 206 and remove the photoresist layer 300 to form the source contact hole 302 and the drain contact hole 303 (as shown in fig. 7).
As shown in fig. 8 and 13, step S4 is performed to form an interconnect metal layer 304 on the insulating layer 206.
As an example, a sputtering process is used to form a thickness between
The sputtering temperature of the interconnection metal layer 304 is between 10 ℃ and 800 ℃.
As an example, the material of the interconnect metal layer 304 includes at least one of aluminum (Al) and copper (Cu).
As shown in fig. 9 to 11 and 13, step S5 is finally performed to pattern the interconnection metal layer 304 to form a source interconnection metal structure 207, a drain interconnection metal structure 208, and a composite field plate structure, wherein the source interconnection metal structure 207 penetrates through the source contact hole 302 to be electrically connected to the source electrode 203, the drain interconnection metal structure 208 penetrates through the drain contact hole 303 to be electrically connected to the drain electrode 205, the composite field plate structure includes a source field plate 209 and a floating field plate 210 which are spaced apart from each other between the gate electrode 204 and the drain electrode 205, the source field plate 209 is close to the gate electrode 204 and is in equipotential connection with the source interconnection metal structure 207, and the floating field plate 210 is close to the drain electrode 205.
The interconnection metal layer 304 is patterned, and a composite field plate structure of the source field plate 209 and the floating field plate 210 in the embodiment is formed while the source interconnection metal structure 207 and the drain interconnection metal structure 208 are formed, so that additional process steps are not required, the implementation is easy, and the manufacturing cost is low.
As shown in fig. 4, 10 and 11, the HEMT device includes an active region 40 and a non-active region, and the source interconnection metal structure 207, the drain interconnection metal structure 208 and the composite field plate structure are formed on the active region 40 as an example; a connection line 211 for equipotential connection of the source field plate 209 of the composite field plate to the source interconnect metal structure 207 is formed on the non-active region.
As shown in fig. 10 and 11, a distance L1 between the source field plate and the floating field plate is greater than or equal to 0.5 μm, for example. Since the electric field concentration points originally located at the edge of the gate electrode 204 and the edge of the drain electrode 205 can be transferred into the insulating layer 206 between the source field plate 209 and the floating field plate 210 by using the source field plate 209 and the floating field plate 210, the insulating layer 206 may be broken down if the distance L1 between the source field plate 209 and the floating field plate 210 is too small, and when the distance L1 between the source field plate and the floating field plate is set to be greater than or equal to 0.5 μm, the insulating layer 206 can be effectively prevented from being broken down.
As a further example, as shown in fig. 10 and 11, the total length of the source field plate 209 and the floating field plate 210 is greater than or equal to 1/4 of the distance L2 between the gate electrode and the drain electrode.
As a further example, as shown in fig. 10 and 11, a distance L3 between the source field plate and the gate electrode is greater than or equal to 1/8 of a distance L2 between the gate electrode and the drain electrode, and a distance L4 between the floating field plate and the drain electrode is greater than or equal to 1/4 of a distance L2 between the gate electrode and the drain electrode.
As an example, the method for forming the interconnect metal layer 304 on the insulating layer 206 and patterning the interconnect metal layer 304 to form the source interconnect metal structure 207, the drain interconnect metal structure 208, and the composite field plate structure includes: depositing a metal on the insulating layer 206, wherein the metal fills the source contact hole 302 and the drain contact hole 303, and forms a metal interconnection layer 304 (shown in fig. 8) covering the insulating layer; forming a photoresist layer 300 on the interconnect metal layer 304, and patterning the photoresist layer 300 to form a source interconnect metal structure etching window pattern 307, a drain interconnect metal structure etching window pattern 308, and a composite field plate structure etching window pattern 305 (as shown in fig. 9) in the photoresist layer 300; etching the interconnection metal layer 304 by dry etching based on the source interconnection metal structure etching window pattern 307, the drain interconnection metal structure etching window pattern 308 and the composite field plate structure etching window pattern 305; the photoresist layer 300 is removed to form the source interconnection metal structure 207, the drain interconnection metal structure 208 and the composite field plate structure (as shown in fig. 10).
In summary, the present invention provides an HEMT device having a field plate structure and a method for manufacturing the HEMT device, in which a source field plate and a floating field plate are provided to form a composite field plate structure between a gate electrode and a drain electrode of the HEMT device. On one hand, the source field plate is electrically connected with the source electrode, and a zero potential body is provided in the HEMT device, so that the electric field peak value at the edge of the gate electrode can be effectively reduced; on the other hand, the floating field plate is approximately equal to the potential of the drain electrode due to charge induction, and the electric field peak value at the edge of the drain electrode is effectively reduced. Under the combined action of the source field plate and the floating field plate, the electric field concentration points which are originally positioned at the edge of the gate electrode and the edge of the drain electrode are transferred to the insulating layer between the source field plate and the floating field plate, so that the electric field distribution in the whole HEMT device is optimized, the electric field change gradient is more gradual, and the breakdown voltage of the device is improved. Meanwhile, the source field plate is electrically connected with the source electrode through the connecting wire outside the active area, so that the phenomenon that the source field plate directly extends to cover the gate electrode to introduce extra parasitic capacitance is avoided. And finally, the source field plate and floating field plate composite field plate structure is formed by patterning the interconnection metal layer while the source electrode interconnection metal layer and the drain electrode interconnection metal layer are formed, no additional process step is needed, the implementation is easy, and the manufacturing cost is low. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (14)
1. A HEMT device having a field plate structure, comprising:
the HEMT device, the source electrode, the gate electrode and the drain electrode of the HEMT device are covered with insulating layers;
the source electrode interconnection metal structure is arranged on the insulating layer and penetrates through the insulating layer to be electrically connected with the source electrode;
the drain electrode interconnection metal structure is arranged on the insulating layer and penetrates through the insulating layer to be electrically connected with the drain electrode;
and the composite field plate structure is arranged on the insulating layer and comprises a source field plate and a floating field plate which are arranged between the gate electrode and the drain electrode at intervals, the source field plate is close to the gate electrode and is in equipotential connection with the source electrode interconnection metal structure, and the floating field plate is close to the drain electrode.
2. The HEMT device with a field plate structure according to claim 1, wherein: the HEMT device sequentially comprises a channel layer, a barrier layer and a passivation layer from bottom to top, wherein the source electrode, the gate electrode and the drain electrode are all arranged on the passivation layer and penetrate through the passivation layer to be in contact with the barrier layer.
3. The HEMT device with a field plate structure according to claim 1, wherein: the HEMT device comprises an active region and a non-active region, wherein the source electrode interconnection metal structure, the drain electrode interconnection metal structure and the composite field plate structure are arranged in the active region, and the source electrode interconnection metal structure is connected with the source field plate in an equipotential mode through a connecting line arranged in the non-active region.
4. The HEMT device with a field plate structure according to any one of claims 1 to 3, wherein: the distance between the source field plate and the floating field plate is greater than or equal to 0.5 μm.
5. The HEMT device with a field plate structure according to claim 4, wherein: the total length of the source field plate and the floating field plate is greater than or equal to 1/4 of the distance between the gate electrode and the drain electrode, and/or the distance between the source field plate and the gate electrode is greater than or equal to 1/8 of the distance between the gate electrode and the drain electrode, and the distance between the floating field plate and the drain electrode is greater than or equal to 1/4 of the distance between the gate electrode and the drain electrode.
6. The HEMT device with a field plate structure according to any one of claims 1 to 3, wherein: the material of the channel layer comprises GaN, the material of the barrier layer comprises AlGaN, the material of the passivation layer comprises silicon nitride, the material of the source electrode and the drain electrode comprises at least one of the group consisting of titanium (Ti), aluminum (Al), nickel (Ni) and gold (Au), the material of the gate electrode comprises at least one of titanium (Ti) and gold (Au), the material of the insulating layer comprises nitride or oxide, and the material of the source interconnection metal layer, the drain interconnection metal layer, the connecting line, the source field plate and the floating field plate comprises at least one of aluminum (Al) and copper (Cu).
7. The HEMT device with a field plate structure according to any one of claims 1 to 3, wherein: the thickness of the source electrode and the drain electrode is between
The thickness of the gate electrode is between
The thickness of the insulating layer is between
In the meantime.
8. A preparation method of an HEMT device with a field plate structure is characterized by comprising the following steps:
forming an HEMT device, wherein the HEMT device is provided with a source electrode, a drain electrode and a gate electrode;
forming an insulating layer on the HEMT device, wherein the insulating layer covers the source electrode, the drain electrode and the gate electrode;
patterning the insulating layer to form a source contact hole and a drain contact hole which penetrate through the insulating layer;
forming an interconnection metal layer on the insulating layer and patterning the interconnection metal layer to form a source interconnection metal structure, a drain interconnection metal structure and a composite field plate structure, wherein the source interconnection metal structure penetrates through the source contact hole to be electrically connected with the source electrode, the drain interconnection metal structure penetrates through the drain contact hole to be electrically connected with the drain electrode, the composite field plate structure comprises a source field plate and a floating field plate which are arranged between the gate electrode and the drain electrode at intervals, the source field plate is close to the gate electrode and is in equipotential connection with the source interconnection metal structure, and the floating field plate is close to the drain electrode.
9. The method for manufacturing an HEMT device with a field plate structure according to claim 8, wherein: the step of forming the HEMT device comprises:
sequentially forming a channel layer, a barrier layer and a passivation layer of the HEMT device from bottom to top;
and forming the source electrode, the gate electrode and the drain electrode on the passivation layer, wherein the source electrode, the gate electrode and the drain electrode penetrate through the passivation layer and are in contact with the barrier layer.
10. The method for manufacturing an HEMT device with a field plate structure according to claim 8, wherein: forming the interconnection metal layer on the insulating layer and patterning the interconnection metal layer, further comprising:
the HEMT device comprises an active region and a non-active region, wherein the source electrode interconnection metal structure, the drain electrode interconnection metal structure and the composite field plate structure are formed on the active region;
and a connecting wire for realizing equipotential connection between the source field plate of the composite field plate and the source electrode interconnection metal structure is formed on the non-active area.
11. The method for manufacturing a HEMT device having a field plate structure according to any one of claims 8 to 10, wherein: the steps of forming the interconnect metal layer on the insulating layer and patterning the interconnect metal layer include:
depositing metal on the insulating layer, wherein the metal fills the source contact hole and the drain contact hole, and an interconnection metal layer covering the insulating layer is formed;
forming a photoresist layer on the interconnection metal layer, and patterning the photoresist layer to form a source interconnection metal structure etching window pattern, a drain interconnection metal structure etching window pattern and a composite field plate structure etching window pattern in the photoresist layer;
etching the interconnection metal layer by adopting dry etching based on the source interconnection metal structure etching window pattern, the drain interconnection metal structure etching window pattern and the composite field plate structure etching window pattern;
and removing the photoresist layer to form the source electrode interconnection metal structure, the drain electrode interconnection metal structure and the composite field plate structure.
12. The method for manufacturing a HEMT device having a field plate structure according to any one of claims 8 to 10, wherein: the distance between the source field plate and the floating field plate is greater than or equal to 0.5 μm.
13. The method for manufacturing an HEMT device having a field plate structure according to claim 12, wherein: the total length of the source field plate and the floating field plate is greater than or equal to 1/4 of the distance between the gate electrode and the drain electrode, and/or the distance between the source field plate and the gate electrode is greater than or equal to 1/8 of the distance between the gate electrode and the drain electrode, and the distance between the floating field plate and the drain electrode is greater than or equal to 1/4 of the distance between the gate electrode and the drain electrode.
14. The method for manufacturing a HEMT device having a field plate structure according to any one of claims 8 to 10, wherein: the material of the channel layer comprises GaN, the material of the barrier layer comprises AlGaN, the material of the passivation layer comprises silicon nitride, the material of the source electrode and the drain electrode comprises at least one of the group consisting of titanium (Ti), aluminum (Al), nickel (Ni) and gold (Au), the material of the gate electrode comprises at least one of titanium (Ti) and gold (Au), the material of the insulating layer comprises nitride or oxide, and the material of the source interconnection metal layer, the drain interconnection metal layer, the connecting line, the source field plate and the floating field plate comprises at least one of aluminum (Al) and copper (Cu).
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