CN113030000B - 单晶硅棒间隙氧含量的测量方法及装置 - Google Patents
单晶硅棒间隙氧含量的测量方法及装置 Download PDFInfo
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- CN113030000B CN113030000B CN202110226443.2A CN202110226443A CN113030000B CN 113030000 B CN113030000 B CN 113030000B CN 202110226443 A CN202110226443 A CN 202110226443A CN 113030000 B CN113030000 B CN 113030000B
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- oxygen content
- single crystal
- silicon
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 218
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 218
- 239000010703 silicon Substances 0.000 title claims abstract description 218
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 217
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 217
- 239000001301 oxygen Substances 0.000 title claims abstract description 217
- 239000013078 crystal Substances 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims abstract description 41
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 228
- 238000010521 absorption reaction Methods 0.000 claims abstract description 62
- 235000012431 wafers Nutrition 0.000 claims description 137
- 238000005259 measurement Methods 0.000 claims description 70
- 238000002834 transmittance Methods 0.000 claims description 10
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000002329 infrared spectrum Methods 0.000 claims description 5
- 238000004364 calculation method Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000012360 testing method Methods 0.000 description 17
- 230000008569 process Effects 0.000 description 10
- 238000001514 detection method Methods 0.000 description 6
- 238000005070 sampling Methods 0.000 description 6
- 238000004590 computer program Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
- G01N2021/3568—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor applied to semiconductors, e.g. Silicon
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
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CN113030000A CN113030000A (zh) | 2021-06-25 |
CN113030000B true CN113030000B (zh) | 2023-02-21 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0410737A2 (en) * | 1989-07-27 | 1991-01-30 | Fujitsu Limited | Silicon crystal evaluation method and semiconductor device fabrication method using the same |
JPH0749305A (ja) * | 1993-08-04 | 1995-02-21 | Komatsu Electron Metals Co Ltd | シリコン単結晶中の格子間型酸素濃度測定装置および測定方法 |
US5757003A (en) * | 1994-04-22 | 1998-05-26 | Forsvarets Forskningsanstalt | Method to determine the extent of oxygen precipitate in silicon |
CN104089917A (zh) * | 2014-05-04 | 2014-10-08 | 中国科学院上海应用物理研究所 | 一种氟盐中氧含量的测试方法 |
CN105092511A (zh) * | 2015-08-12 | 2015-11-25 | 南京秀科仪器有限公司 | 一种测量单晶硅代位碳和间隙氧含量的方法 |
CN110006839A (zh) * | 2019-05-06 | 2019-07-12 | 西安奕斯伟硅片技术有限公司 | 一种检测装置及检测方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5524894B2 (ja) * | 2011-04-04 | 2014-06-18 | 信越化学工業株式会社 | 多結晶シリコン中の炭素濃度測定方法 |
CN111257267B (zh) * | 2020-03-30 | 2023-03-17 | 宁波材料所杭州湾研究院 | 一种测定碳化硅陶瓷材料中氧含量的方法 |
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2021
- 2021-03-01 CN CN202110226443.2A patent/CN113030000B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0410737A2 (en) * | 1989-07-27 | 1991-01-30 | Fujitsu Limited | Silicon crystal evaluation method and semiconductor device fabrication method using the same |
JPH0749305A (ja) * | 1993-08-04 | 1995-02-21 | Komatsu Electron Metals Co Ltd | シリコン単結晶中の格子間型酸素濃度測定装置および測定方法 |
US5757003A (en) * | 1994-04-22 | 1998-05-26 | Forsvarets Forskningsanstalt | Method to determine the extent of oxygen precipitate in silicon |
CN104089917A (zh) * | 2014-05-04 | 2014-10-08 | 中国科学院上海应用物理研究所 | 一种氟盐中氧含量的测试方法 |
CN105092511A (zh) * | 2015-08-12 | 2015-11-25 | 南京秀科仪器有限公司 | 一种测量单晶硅代位碳和间隙氧含量的方法 |
CN110006839A (zh) * | 2019-05-06 | 2019-07-12 | 西安奕斯伟硅片技术有限公司 | 一种检测装置及检测方法 |
Non-Patent Citations (2)
Title |
---|
INFRARED MEASUREMENTS OF INTERSTITIAL OXYGEN IN HEAVILY DOPED SILICON;A.S. OATES et al.;《Journal of Crystal Growth》;19881231;第89卷;全文 * |
红外测量重掺硅中间隙氧含量;任丙彦等;《第十一届全国半导体集成电路、硅材料学术会议》;19991231;全文 * |
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Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Patentee after: Xi'an Yisiwei Material Technology Co.,Ltd. Patentee after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Patentee before: Xi'an yisiwei Material Technology Co.,Ltd. Patentee before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |