CN112968073A - 超灵敏柔性氧化镓光电探测器及阵列、制备方法和应用 - Google Patents
超灵敏柔性氧化镓光电探测器及阵列、制备方法和应用 Download PDFInfo
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 38
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000001514 detection method Methods 0.000 claims abstract description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 33
- 229910052782 aluminium Inorganic materials 0.000 claims description 32
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- 238000004544 sputter deposition Methods 0.000 claims description 16
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 13
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 12
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Abstract
本发明提出了一种超灵敏柔性氧化镓光电探测器及阵列、制备方法和应用，光电探测器，包括衬底，衬底的上端从下到上依次设置有金属铝薄膜、氧化铝薄膜、Ga2O3薄膜和石墨烯电极。本发明针对灵敏度低不能探测微弱的日盲光信号的问题，提出了一种利用空穴捕获降低肖特基势垒实现高响应度和快响应速度的基础上，利用多光束干涉将日盲光限制在超薄Ga2O3(<λ/4n～30nm)中共振吸收，实现了兼具高灵敏度与快响应速度的Ga2O3日盲探测器，并将其用于微弱日盲信号的阵列成像和位置探测。
Description
技术领域
本发明涉及光电器件制备领域，特别是指一种超灵敏柔性氧化镓光电探测器及阵列、制备方法和应用。
背景技术
光电探测器是光电子器件的核心元器件之一，在光电系统中起到将光信号转变为电信号的作用。200-280nm波段的太阳辐射被大气层吸收和散射不能到达地球表面，被称为日盲波段。工作于日盲波段的探测器可以避免最大的自然光——太阳光的干扰，具有很高的信噪比和很低的虚警率，是光电探测领域的研究重点之一。日盲紫外成像和位置探测在通讯、导弹预警、火灾探测、导航定位和电晕放电检测等领域有广泛的应用前景。
氧化镓禁带宽度为4.9eV，响应光谱覆盖大部分日盲波段。此外Ga2O3化学和热稳定性好、易于大面积制备、击穿电场强度高等优点，被视为制备日盲紫外探测器的理想材料。但被探测目标在日盲区的信号往往非常微弱，如火焰探测中日盲信号强度只有nW/cm2量级。探测器对如此微弱信号的响应往往淹没在噪声中难以识别，虽然可以通过滤波法、双路消噪法、锁定接收法、取样积分法等进行识别，但大大增加了成本，也降低了探测速度。尤其对于探测成像和位置探测等应用来说，需要对信号实时测量，而对微弱响应信号测量是一件困难的事情，其噪声和干扰将影响到测量系统的分辨率、动态范围、信噪比和重复性。
因此，最佳解决方案是提高探测器的光电导增益和灵敏度，提高微弱日盲信号下的光电流。但是目前的器件对微弱光的探测灵敏度还不够，只能探测到亚μW/cm2强度的日盲光。而探测器的响应度和响应速度之间是一种权衡关系，如何在不降低响应速度的前提下提高对微弱信号的探测灵敏度，还缺乏有效解决方法。
发明内容
本发明的目的在于针对灵敏度低不能探测微弱的日盲光信号的问题，提出了一种利用空穴捕获降低肖特基势垒实现高响应度和快响应速度的基础上，利用多光束干涉将日盲光限制在超薄Ga2O3(<λ/4n～30nm)中共振吸收，实现了兼具高灵敏度与快响应速度的Ga2O3日盲探测器，并将其用于微弱日盲信号的阵列成像和位置探测。
本发明的技术方案是这样实现的：超灵敏柔性氧化镓光电探测器，包括衬底，衬底的上端从下到上依次设置有金属铝薄膜、氧化铝薄膜、氧化镓(Ga2O3)薄膜和石墨烯电极。
进一步地，金属铝薄膜的厚度为100-150纳米。
进一步地，氧化铝薄膜的厚度为5纳米，氧化铝薄膜太厚会阻挡光生载流子的收集，太薄起不到钝化铝膜的作用。
进一步地，当发生干涉相消时，氧化镓薄膜的厚度为20纳米。
进一步地，石墨烯为单层结构。
进一步地，衬底为柔性PEN衬底，厚度为0.125毫米。
所述超灵敏柔性氧化镓光电探测器的制备方法，包括以下步骤：
(1)清洗衬底；
(2)采用激光直写和磁控溅射在衬底上金属铝薄膜，金属铝薄膜作为反射层和低电极；
(3)利用原子层相沉积技术在金属铝薄膜上沉积氧化铝薄膜；
(4)采用磁控溅射技术在氧化铝薄膜上溅射Ga2O3薄膜；
(5)采用湿法转移技术，在Ga2O3薄膜上转移一层石墨烯作为公共电极。
进一步地，步骤(2)中，射频磁控溅射所用的靶材为金属铝靶，金属铝靶的纯度为99.9％，溅射气体为氩气。
进一步地，步骤(3)中，原子层沉积所用的铝源为三甲基铝，氧源为水，气体为氮气。
进一步地，步骤(4)中，射频磁控溅射所用的靶材为Ga2O3陶瓷靶，Ga2O3陶瓷靶的纯度99.99％，溅射气体为氩气和氧气混合气体，溅射温度为30℃。
采用所述的超灵敏柔性氧化镓光电探测器制备的光电探测器阵列。
所述的光电探测器阵列在光学成像或光轨迹探测的应用。
本发明的有益效果：
本发明通过利用空穴捕获降低肖特基势垒实现高响应度和快响应速度的基础上，利用多光束干涉将日盲光限制在超薄Ga2O3(h<λ/4n～30nm，h是薄膜的厚度及光在薄膜当中所走的光程)中共振吸收，实现了兼具高灵敏度与快响应速度的Ga2O3日盲探测器，并将其用于微弱日盲信号的阵列成像和位置探测。本发明的光电探测器10V偏压下响应度为295A/W，探测度为1.2×1016Jones，上升时间为1.7微秒，下降时间为26.8微秒。
本发明通过利用反射光的干涉相消原理在超薄的Ga2O3中实现高光吸收效率可以提高微弱日盲光产生的载流子浓度，更显著缩短了光生载流子输运距离，提高了光生载流子输运效率，从而实现兼具高灵敏度与快响应速度的Ga2O3日盲探测器，并将其用于微弱日盲信号的阵列成像和位置探测。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为金属铝的反射光谱；
图2为本发明柔性氧化镓光电探测器不同氧化铝厚度的反射光谱；
图3为本发明柔性氧化镓光电探测器的结构示意图；
图4为本发明柔性氧化镓光电探测器的能带示意图；
图5为本发明氧化镓薄膜的吸收光谱；
图6为本发明氧化镓薄膜的扫描电子显微镜照片；
图7为本发明氧化镓薄膜的原子力显微镜照片；
图8为光电探测器的光电流和暗电流；
图9为光电探测器的光响应图谱；
图10为光电探测器阵列光学成像的应用；
图11为光电探测器阵列光轨迹探测的应用。
衬底1，金属铝薄膜2，氧化铝薄膜3，氧化镓薄膜4，石墨烯电极5。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有付出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
实施例1
超灵敏柔性氧化镓光电探测器，包括衬底1，衬底1的上端从下到上依次设置有金属铝薄膜2、氧化铝薄膜3、氧化镓薄膜4和石墨烯电极5。金属铝薄膜2的厚度为100-150纳米。氧化铝薄膜3的厚度为5纳米。氧化镓薄膜4的厚度为20纳米。石墨烯5为单层结构，衬底为柔性PEN衬底，厚度为0.125毫米。因为金属铝在深紫外的反射光大于百分之八十，所以本实验选用铝作为反光层，反射光谱如图1所示，金属铝薄膜的厚度采用100纳米，氧化铝薄膜3设置于金属铝薄膜2一端的上侧，该端金属铝薄膜2作为反射层，金属铝薄膜2的另一端外露，作为低电极，氧化镓薄膜4设置于氧化铝薄膜3的上端以及衬底1上端远离低电极的一侧，石墨烯电极5设置于氧化镓薄膜4的上端作为公共电极。如图2所示通过对比这个器件结构的反射光谱发现，当氧化镓厚度为20纳米时，器件具有最小的光反射率，即发生干涉相消现象，因此在实验中氧化镓的最佳厚度为20纳米。
超灵敏柔性氧化镓光电探测器的使用方法，包括以下步骤：
(1)清洗衬底；
(2)采用激光直写和磁控溅射在衬底上金属铝薄膜，金属铝薄膜作为反射层和低电极，射频磁控溅射所用的靶材为金属铝靶，金属铝靶的纯度为99.9％，溅射气体为氩气；其中激光直写的步骤如下：首先画出需要用的图案，然后旋涂光刻胶，温度为115℃下加热1分钟，然后放入激光直写中曝光，曝光完成后，取出显影，既可得到想要的图案。射频磁控溅射步骤如下：将显影后的样品放入溅射室。在溅射之前，通过分子泵将生长室的真空抽至低于6.0×10-4Pa。在生长过程中通入氩气，气体的通量都保持在10sccm，整个溅射过程射频功率为50W，生长压强为1Pa，整个生长时间为3分钟；
(3)利用原子层相沉积技术在金属铝薄膜上沉积氧化铝薄膜，原子层沉积所用的铝源为三甲基铝，氧源为水，气体为氮气，原子层相沉积步骤如下：在沉积之前，通过机械泵将沉积室压强抽至低于2.0×10-3Pa；温度增加至100℃，然后再通入氩气，调控压强为1.6～1.7Pa，沉积时间为50分钟；
(4)采用磁控溅射技术在氧化铝薄膜上溅射Ga2O3薄膜，射频磁控溅射所用的靶材为Ga2O3陶瓷靶，Ga2O3陶瓷靶的纯度99.99％，射频磁控溅射步骤如下：首先将柔性衬底依次在丙酮、酒精和去离子水中超声波清洗5分钟，然后用氮气吹干。在溅射之前，通过分子泵将生长室的真空抽至低于6.0×10-4Pa。在生长过程中通入氩气和氧气，气体的通量都保持在10sccm，整个溅射过程射频功率为120W，生长压强为1Pa，整个生长时间为30分钟；其中，氩气和氧气为任意比例。
(5)采用湿法转移技术，在Ga2O3薄膜上转移一层石墨烯作为公共电极。
本实施例利用空穴捕获降低肖特基势垒实现高响应度和快响应速度的基础上，利用多光束干涉将日盲光限制在超薄Ga2O3(<λ/4n～30nm)中共振吸收，实现了兼具高灵敏度与快响应速度的Ga2O3日盲探测器，器件的平面图和界面图如图3所示。
光电探测器是有金属绝缘层半导体组成的MIS结构，其能带图在负向偏压下如图4所示。氧化镓薄膜的吸收光谱如图5所示，可以看出氧化镓只对深紫外有吸收，对于可见光和近紫外是完全透过的。
氧化镓薄膜的扫描图如图6所示，从图中可以看出氧化镓为无定形结构，表面为纳米团簇小颗粒组成。氧化镓的表面粗糙度可以从原子力显微镜中看出，如图7所示，氧化镓具有光滑的平面，均方根表面粗糙度为1.2纳米。
光电探测器的电压电流曲线如图8所示，从图中可以看出，器件的光电流明显大于暗电流，且是暗电流的106倍，说明器件具有良好的光电性能。光电探测器的光响应曲线如图9所示，从图中可以看出器件只对波长小于260纳米的光有响应，对于看见光和近紫外光都是没有响应，说明器件具有良好的光谱选择性。
实施例2
把实施例1的光电探测器做成一个7×7的光电探测器阵列，作为光电探测器阵列的一个应用就是成像，把光电探测器阵列器件和光源之间放置一个镂空的6字形淹膜版，然后通过记录阵列器件中每个像素的光电，绘制出来的光电如图10所示，从图中可以看出，7×7的光电探测器阵列完全还原了淹膜的图像，也出现一个6字形的图案，说明光电探测器阵列完全可以应用到成像中去。
实施例3
实施例2中的光电探测器阵列还可以探测运动着的光源，当运动着的光源途径光电探测器阵列时，阵列中的各各像素会跟着光轨迹依次输出高电流，这样的在各各像素之间交替出现，就可以判断出光源的运动轨迹，还可以根据两个像素出现高电流的时间来判断光源的运动速度，输出端被光照射的光电探测器阵列的电流随时间的变化如图11所示。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (10)
1.超灵敏柔性氧化镓光电探测器，包括衬底(1)，其特征在于：衬底(1)的上端从下到上依次设置有金属铝薄膜(2)、氧化铝薄膜(3)、Ga2O3薄膜(4)和石墨烯电极(5)。
2.根据权利要求1所述的一种超灵敏柔性氧化镓光电探测器，其特征在于：金属铝薄膜的厚度为100-150纳米，氧化铝薄膜的厚度为5纳米。
3.根据权利要求1所述的超灵敏柔性氧化镓光电探测器，其特征在于：Ga2O3薄膜的厚度为20纳米，石墨烯为单层结构。
4.根据权利要求1所述的超灵敏柔性氧化镓光电探测器，其特征在于：衬底为柔性PEN衬底。
5.权利要求1-4之一所述的超灵敏柔性氧化镓光电探测器阵列的制备方法，其特征在于，包括以下步骤：
(1)清洗衬底；
(2)采用激光直写和磁控溅射在衬底上金属铝薄膜，金属铝薄膜作为反射层和低电极；
(3)利用原子层相沉积技术在金属铝薄膜上沉积氧化铝薄膜；
(4)采用磁控溅射技术在氧化铝薄膜上溅射Ga2O3薄膜；
(5)采用湿法转移技术，在Ga2O3薄膜上转移一层石墨烯作为公共电极。
6.根据权利要求5所述的制备方法，其特征在于，步骤(2)中，射频磁控溅射所用的靶材为金属铝靶，金属铝靶的纯度为99.9％，溅射气体为氩气。
7.根据权利要求5所述的制备方法，其特征在于，步骤(3)中，原子层沉积所用的铝源为三甲基铝，氧源为水，气体为氮气。
8.根据权利要求5所述的制备方法，其特征在于，步骤(4)中，射频磁控溅射所用的靶材为Ga2O3陶瓷靶，Ga2O3陶瓷靶的纯度99.99％，溅射气体为氩气和氧气混合气体，溅射温度为30℃。
9.采用权利权利要求1-4之一所述的超灵敏柔性氧化镓光电探测器制备的光电探测器阵列。
10.权利要求9所述的光电探测器阵列在光学成像或光轨迹探测的应用。
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