CN112953179A - Ultrahigh voltage LLC half-bridge drive circuit and working method thereof - Google Patents
Ultrahigh voltage LLC half-bridge drive circuit and working method thereof Download PDFInfo
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- CN112953179A CN112953179A CN202110382870.XA CN202110382870A CN112953179A CN 112953179 A CN112953179 A CN 112953179A CN 202110382870 A CN202110382870 A CN 202110382870A CN 112953179 A CN112953179 A CN 112953179A
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- 238000002955 isolation Methods 0.000 claims abstract description 30
- 239000003990 capacitor Substances 0.000 claims description 21
- 238000001514 detection method Methods 0.000 claims description 6
- 238000011017 operating method Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 201000001432 Coffin-Siris syndrome Diseases 0.000 description 2
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- 102100039435 C-X-C motif chemokine 17 Human genes 0.000 description 1
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- 201000000233 Coffin-Siris syndrome 1 Diseases 0.000 description 1
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- 101000889048 Homo sapiens C-X-C motif chemokine 17 Proteins 0.000 description 1
- 101100478969 Oryza sativa subsp. japonica SUS2 gene Proteins 0.000 description 1
- 101100004663 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) BRR2 gene Proteins 0.000 description 1
- 101100504519 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GLE1 gene Proteins 0.000 description 1
- 101100489717 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GND2 gene Proteins 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
Abstract
The embodiment of the invention discloses an ultrahigh voltage LLC half-bridge drive circuit and a working method thereof, wherein the circuit comprises a control unit, an isolation unit, an upper switch element and a lower switch element; the upper switch element and the lower switch element are respectively connected with a transformer; the control unit is provided with a bootstrap terminal pin, and the bootstrap terminal pin is grounded; the control unit is used for outputting a driving signal and dividing the driving signal into two parts; the isolation unit is used for carrying out bootstrap boosting on one path of driving signal to obtain a processed signal; an upper switching element for conducting or cutting according to the processed signal; and the lower switch element is used for conducting or cutting off according to the other drive signal. According to the invention, the bootstrap circuit in the control unit is closed, the upper switch element is driven to be conducted or cut off after the bootstrap boosting is carried out on the drive signal output by the control unit through the isolation unit, and the lower switch element is directly driven by the control unit, so that the small size is realized, the performance is ensured, and the withstand voltage can meet the requirement of high input voltage.
Description
Technical Field
The invention relates to the technical field of LLC half-bridge drive circuits, in particular to an ultrahigh voltage LLC half-bridge drive circuit and a working method thereof.
Background
The drive output of the commercial LLC half-bridge drive main chip generally has two modes, one mode is that the main chip is provided with an upper half-bridge self-boosting circuit to drive an upper half-bridge MOS tube, and a lower half-bridge MOS tube is directly driven by the main chip without bootstrap or other drive, but the withstand voltage of the bootstrap circuit of the commercial LLC half-bridge drive chip with the bootstrap circuit cannot exceed 650V, and the requirements of ultrahigh input voltage such as DC700-750V cannot be met; another LLC half-bridge drives main chip plus transformer and peripheral part and makes a bootstrap circuit to save chip cost.
In summary, the LLC half-bridge drives the self-contained bootstrap boost circuit of the main chip, the withstand voltage does not meet the input voltage requirement of DC700-750V, the external transformer bootstrap circuit is too large in size, and the performance is difficult to guarantee.
Therefore, it is necessary to design a new circuit, which is small in size, ensures performance, and has a withstand voltage of 700-750V.
Disclosure of Invention
The invention aims to provide an ultrahigh voltage LLC half-bridge drive circuit and a working method thereof.
In order to solve the technical problems, the invention aims to realize the following technical scheme: the ultrahigh voltage LLC half-bridge drive circuit comprises a control unit, an isolation unit, an upper switching element and a lower switching element; the upper switch element and the lower switch element are respectively connected with a transformer; the control unit is provided with a bootstrap terminal pin, and the bootstrap terminal pin is grounded; the control unit is used for outputting a driving signal and dividing the driving signal into two parts; the isolation unit is used for carrying out bootstrap boosting on one path of driving signal to obtain a processed signal; the upper switch element is used for conducting or cutting off according to the processed signal; and the lower switch element is used for conducting or cutting off according to the other drive signal.
The further technical scheme is as follows: the control unit includes a control chip IC 2.
The further technical scheme is as follows: the isolation unit includes an isolation chip IC 3.
The further technical scheme is as follows: the upper switch element comprises a Mos tube Q13, the lower switch element comprises a Mos tube Q14, the grid electrode of the Mos tube Q13 is connected with the isolation chip IC3, the grid electrode of the Mos tube Q14 is connected with the control chip IC2, and the drain electrode of the Mos tube Q14 and the source electrode of the Mos tube Q13 are respectively connected with the input side of the transformer.
The further technical scheme is as follows: a resistor R84 and a diode D12 are connected between the control chip IC2 and the gate of the Mos tube Q14, and an amplifying triode Q9 is connected between the gate of the Mos tube Q14 and the source of the Mos tube Q14; the base electrode of the amplifying triode Q9 is connected with the control chip IC2, and the source electrode of the Mos tube Q14 is grounded.
The further technical scheme is as follows: the control chip IC2 is connected with the transformer through a current detection unit.
The further technical scheme is as follows: the current detection unit comprises a resistor R77, a diode D7, a resistor R87, a capacitor C27 and a capacitor C29 which are connected in sequence; the resistor R77 is connected with the control chip IC2, and the capacitor C29 is connected with the input side of the transformer.
The further technical scheme is as follows: a resistor R74 with one end grounded and a capacitor C20 are connected between the resistor R77 and the control chip IC 2.
The further technical scheme is as follows: a diode D9 with one end grounded is also connected between the diode D7 and the resistor R87.
In addition, an object of the present invention is to provide a method for operating an ultra-high voltage LLC half-bridge driver circuit, including:
the bootstrap terminal pin of the control unit is grounded so as to close the internal bootstrap function of the control unit;
the control unit outputs a driving signal and divides the driving signal into two parts;
the isolation unit performs bootstrap boosting on one path of driving signal to obtain a processed signal;
the upper switch element is conducted or cut off according to the processed signal;
the lower switch element is conducted or cut off according to the other path of driving signal;
and the conduction or the disconnection of the transformer is realized by utilizing the conduction or the disconnection of the upper switch element and the lower switch element.
Compared with the prior art, the invention has the beneficial effects that: according to the invention, the control unit, the isolation unit, the upper switch element and the lower switch element are arranged, the bootstrap terminal pin on the control unit is grounded so as to close the bootstrap circuit in the control unit, the upper switch element is driven to be conducted or cut off after the bootstrap boosting is carried out on the driving signal output by the control unit through the isolation unit, the lower switch element is directly driven by the control unit, the small size is realized, the performance is ensured, and the withstand voltage can meet the input voltage requirement of DC 700-750V.
The invention is further described below with reference to the accompanying drawings and specific embodiments.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic block diagram of an extra-high voltage LLC half-bridge driving circuit according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a specific circuit of an extra-high voltage LLC half-bridge driving circuit according to an embodiment of the present invention.
The labels in the figures illustrate:
10. a control unit; 20. an isolation unit; 30. an upper switching element; 40. a lower switching element; 50. a transformer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It will be understood that the terms "comprises" and/or "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It is also to be understood that the terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in the specification of the present invention and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
It should be further understood that the term "and/or" as used in this specification and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items.
Referring to fig. 1, fig. 1 is a schematic block diagram of an extra-high voltage LLC half-bridge driving circuit according to an embodiment of the present invention, which can be applied to a driving process of an LLC switching power supply, and can achieve a small volume, ensure performance, and a withstand voltage that can meet an input voltage requirement of DC 700-750V.
The LLC switching power supply output part outputs the constant current which is set; the voltage is variable within a range, such as an output voltage of between 25-54VDC, to automatically accommodate string voltages within this range.
Referring to fig. 1, the ultra-high voltage LLC half-bridge driving circuit includes a control unit 10, an isolation unit 20, an upper switching element 30, and a lower switching element 40; the upper switching element 30 and the lower switching element 40 are connected to a transformer 50; the control unit 10 is provided with a bootstrap terminal pin, and the bootstrap terminal pin is grounded; the control unit 10 is configured to output a driving signal and divide the driving signal into two parts; the isolation unit 20 is configured to perform bootstrap boosting on one of the driving signals to obtain a processed signal; an upper switching element 30 for conducting or intercepting according to the processed signal; and a lower switching element 40 for conducting or cutting according to the other driving signal.
The control unit 10 adopts a general-purpose IC on the market, has a highest internal self-contained withstand voltage of 650V, and performs grounding processing on a bootstrap terminal pin so as to close the internal bootstrap of the control unit 10. The upper half bridge self-boosting circuit externally made by the isolation unit 20 drives the half bridge MOS upper tube, and the lower tube is directly driven by the control unit 10. The problem of withstand voltage of the chip is solved. A chip with an isolation function is used as a circuit with a similar bootstrap function, so that the size is small; the performance is guaranteed.
In the present embodiment, the transformer 50 is referred to as a transformer T3A in fig. 2. The upper switching element 20 is connected to an input voltage device.
In one embodiment, referring to fig. 2, the control unit 10 includes a control chip IC 2. In the present embodiment, the model of the control chip IC2 is, but not limited to, PN 7103.
The OUT terminal pin of the control chip IC2 is grounded as a bootstrap terminal pin, so as to turn off the internal bootstrap boosting function of the control chip IC 2.
In one embodiment, referring to fig. 2, the isolation unit 20 includes an isolation chip IC 3. In the present embodiment, the type of the isolated chip IC3 is, but not limited to, 1EDI20N12 AF.
In an embodiment, referring to fig. 2, the upper switch element 30 includes a Mos transistor Q13, the lower switch element 40 includes a Mos transistor Q14, a gate of the Mos transistor Q13 is connected to an isolation chip IC3, a gate of the Mos transistor Q14 is connected to a control chip IC2, and a drain of the Mos transistor Q14 and a source of the Mos transistor Q13 are respectively connected to the input side of the transformer 50.
In the embodiment, the source of the Mos transistor Q13 is connected to the isolated chip IC3, and a resistor R107 is connected between the source of the Mos transistor Q13 and the gate of the Mos transistor Q13. The drain of Mos transistor Q13 is connected to an input voltage device, which may be, but is not limited to, DC 700-750V.
The VCC1 terminal pin and the VCC2 terminal pin of the isolated chip IC3 are also connected to a power supply, which is connected to the VCC2 terminal pin of the isolated chip IC3 through a resistor R80 and a diode D8 in this order, and the diode D2 is connected to the GND2 terminal pin of the isolated chip IC3 through a capacitor C70.
A resistor R73 is connected between the isolated chip IC3 and the control chip IC2, and a resistor R73A with one end grounded is connected between the resistor R73 and the isolated chip IC 3.
The isolation chip IC3 and the peripheral circuit connected with the isolation chip IC3 form a bootstrap voltage boosting circuit, and after one path of driving signal output by the control chip IC2 is subjected to bootstrap voltage boosting, the conduction or the disconnection of the Mos tube Q13 is driven, so that the conduction or the disconnection of the transformer 50 is realized.
In an embodiment, referring to fig. 2, a resistor R84 and a diode D12 are connected between the control chip IC2 and the gate of the Mos transistor Q14, and an amplifying transistor Q9 is connected between the gate of the Mos transistor Q14 and the source of the Mos transistor Q14; the base electrode of the amplifying triode Q9 is connected with the control chip IC2, and the source electrode of the Mos transistor Q14 is grounded.
The control chip IC2 outputs another driving signal, which is amplified by the amplifying transistor Q9, and then directly drives the Mos transistor Q14 to be turned on or off, so as to turn on or off the transformer 50.
In an embodiment, referring to fig. 2, a resistor R108 is connected between the gate and the source of the Mos transistor Q14.
In one embodiment, the control chip IC2 is connected to the transformer 50 through a current detection unit.
In an embodiment, referring to fig. 2, the current detecting unit includes a resistor R77, a diode D7, a resistor R87, a capacitor C27, and a capacitor C29 connected in sequence; the resistor R77 is connected to the control chip IC2, and the capacitor C29 is connected to the input side of the transformer 50.
In an embodiment, referring to fig. 2, a resistor R74 and a capacitor C20 with one end grounded are further connected between the resistor R77 and the control chip IC 2.
In an embodiment, referring to fig. 2, a diode D9 with one end grounded is further connected between the diode D7 and the resistor R87.
The control chip IC2 detects the current in the main loop through a current detection element formed by a resistance shunt or a capacitive current sensor, etc., to realize current-dependent control.
In an embodiment, the LINE pin of the control chip IC2 is grounded through the capacitor C11, and the resistor R30 is connected between the LINE pin of the control chip IC2 and the capacitor C11, and the resistor R30 is further connected in sequence with a resistor R24, a resistor R23, a resistor R22, and a resistor R21.
The control chip IC2 is further connected with an opto-isolator OP2A, a CSS terminal pin of the control chip IC2 is grounded through a resistor RSS1 and a resistor rfmini, an EDLAY terminal pin of the control chip IC2 is grounded through a resistor R37, a capacitor C9 and a capacitor Cf1, the CSS terminal pin of the control chip IC2 is grounded through a capacitor CSS1, an Rfmin terminal pin of the control chip IC2 is connected with the resistor rfmini, the opto-isolator OP2A is connected with the Rfmin terminal pin of the control chip IC2 through a resistor Rfmaxl, an STBY terminal pin of the control chip IC2 is grounded through a capacitor C4, the opto-isolator OP2A is connected with a capacitor C4, and a resistor R36 is connected between the capacitor C4 and the opto-isolator OP 2A.
The working voltage of the ultrahigh voltage LLC half-bridge driving circuit is between DC700 and 750V, and a bootstrap booster circuit formed by an isolation chip IC3 is additionally arranged, so that the problem of insufficient voltage resistance of an LLC main control chip is solved.
According to the ultrahigh voltage LLC half-bridge driving circuit, the control unit 10, the isolation unit 20, the upper switching element 30 and the lower switching element 40 are arranged, a bootstrap pin on the control unit 10 is grounded to close a bootstrap circuit in the control unit 10, after a driving signal output by the control unit 10 is subjected to bootstrap boosting through the isolation unit 20, the upper switching element 30 is driven to be connected or disconnected, and the lower switching element 40 is directly driven by the control unit 10, so that the size is small, the performance is ensured, and the withstand voltage can meet the requirement of DC700-750V input voltage.
In an embodiment, there is also provided a method for operating an ultra-high voltage LLC half-bridge driver circuit, including:
the bootstrap pin of the control unit 10 is grounded to turn off the internal bootstrap function of the control unit 10;
the control unit 10 outputs a driving signal and divides the driving signal into two;
the isolation unit 20 performs bootstrap boosting on one of the driving signals to obtain a processed signal;
the upper switching element 30 is turned on or off according to the processed signal;
the lower switching element 40 is turned on or off according to the other driving signal;
the conduction or interruption of the transformer 50 is achieved by the conduction or interruption of the upper switching element 30 and the lower switching element 40.
It should be noted that, as can be clearly understood by those skilled in the art, the specific implementation process of the working method of the extra-high voltage LLC half-bridge driving circuit may refer to the corresponding description in the embodiment of the extra-high voltage LLC half-bridge driving circuit, and for convenience and brevity of description, no further description is provided herein.
While the invention has been described with reference to specific embodiments, the invention is not limited thereto, and various equivalent modifications and substitutions can be easily made by those skilled in the art within the technical scope of the invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. The ultrahigh voltage LLC half-bridge drive circuit is characterized by comprising a control unit, an isolation unit, an upper switching element and a lower switching element; the upper switch element and the lower switch element are respectively connected with a transformer; the control unit is provided with a bootstrap terminal pin, and the bootstrap terminal pin is grounded; the control unit is used for outputting a driving signal and dividing the driving signal into two parts; the isolation unit is used for carrying out bootstrap boosting on one path of driving signal to obtain a processed signal; the upper switch element is used for conducting or cutting off according to the processed signal; and the lower switch element is used for conducting or cutting off according to the other drive signal.
2. The ultra-high voltage LLC half-bridge drive circuit of claim 1, wherein said control unit comprises a control chip IC 2.
3. The ultra-high voltage LLC half-bridge drive circuit of claim 2, wherein said isolation unit comprises an isolation chip IC 3.
4. The ultra-high voltage LLC half-bridge drive circuit of claim 3, wherein said upper switching element comprises a Mos transistor Q13, said lower switching element comprises a Mos transistor Q14, a gate of said Mos transistor Q13 is connected to said isolated chip IC3, a gate of said Mos transistor Q14 is connected to said control chip IC2, and a drain of said Mos transistor Q14 and a source of said Mos transistor Q13 are respectively connected to an input side of said transformer.
5. The ultra-high voltage LLC half-bridge drive circuit of claim 4, wherein a resistor R84 and a diode D12 are connected between the control chip IC2 and the gate of the Mos transistor Q14, and an amplifying transistor Q9 is connected between the gate of the Mos transistor Q14 and the source of the Mos transistor Q14; the base electrode of the amplifying triode Q9 is connected with the control chip IC2, and the source electrode of the Mos tube Q14 is grounded.
6. The ultra-high voltage LLC half-bridge drive circuit of claim 5, wherein said control chip IC2 is connected with said transformer through a current detection unit.
7. The ultra-high voltage LLC half-bridge drive circuit of claim 6, wherein the current detection unit comprises a resistor R77, a diode D7, a resistor R87, a capacitor C27 and a capacitor C29 connected in sequence; the resistor R77 is connected with the control chip IC2, and the capacitor C29 is connected with the input side of the transformer.
8. The ultra-high voltage LLC half-bridge drive circuit of claim 7, wherein a resistor R74 and a capacitor C20 are connected between the resistor R77 and the control chip IC2, wherein one end of the resistor R74 is grounded.
9. The extra-high voltage LLC half-bridge driver circuit of claim 8, wherein a diode D9 with one end grounded is further connected between the diode D7 and the resistor R87.
10. An operating method of an ultra-high voltage LLC half-bridge driving circuit is characterized by comprising the following steps:
the bootstrap terminal pin of the control unit is grounded so as to close the internal bootstrap function of the control unit;
the control unit outputs a driving signal and divides the driving signal into two parts;
the isolation unit performs bootstrap boosting on one path of driving signal to obtain a processed signal;
the upper switch element is conducted or cut off according to the processed signal;
the lower switch element is conducted or cut off according to the other path of driving signal;
and the conduction or the disconnection of the transformer is realized by utilizing the conduction or the disconnection of the upper switch element and the lower switch element.
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| CN202110382870.XA CN112953179A (en) | 2021-04-09 | 2021-04-09 | Ultrahigh voltage LLC half-bridge drive circuit and working method thereof |
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| CN202110382870.XA CN112953179A (en) | 2021-04-09 | 2021-04-09 | Ultrahigh voltage LLC half-bridge drive circuit and working method thereof |
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Application publication date: 20210611 |