CN112924840B - LED failure positioning method - Google Patents
LED failure positioning method Download PDFInfo
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- CN112924840B CN112924840B CN202110216537.1A CN202110216537A CN112924840B CN 112924840 B CN112924840 B CN 112924840B CN 202110216537 A CN202110216537 A CN 202110216537A CN 112924840 B CN112924840 B CN 112924840B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2632—Circuits therefor for testing diodes
- G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes
Abstract
The disclosure provides a method for positioning failure of a light emitting diode, wherein the light emitting diode has a plastic package structure, and the method comprises the following steps: the electrical performance test is used for testing the electrical parameters of the failed light emitting diode, and judging whether the failed light emitting diode is in connection failure or not according to the electrical parameters; if yes, determining whether the package and the external pins are normal; if yes, the ray test determines whether the internal pins and the chip are normal; if yes, determining whether the bonding wire is internally broken or not by a ray test; if so, thinning the plastic package structure and determining the fracture position of the bonding wire. The LED is used for LEDs with various plastic package structures. The failure point is gradually positioned by combining physical test, mechanical grinding and chemical unsealing. The package of the surrounding organic matters has small gap of fracture crack, and the LED is in a time-on-off state, so that the bonding wire shape can be completely reserved, and the internal breakpoint of the bonding wire can be accurately analyzed. The method can simply and efficiently analyze the breakage reason of the necking part of the bonding point, which is usually caused by the connection failure of the bonding wire.
Description
Technical Field
The disclosure relates to the field of measurement technology, and in particular, to a method for positioning failure of a light emitting diode.
Background
Light Emitting Diodes (LEDs) are used in a large number of industrial fields with low power consumption, long life, small size and high reliability. The spectrum of the LED is expanded from the original red light to green light and blue light, a three-primary-color complete luminous system is formed, and a white light LED is realized.
In the practical application process, the bonding wire connection failure proportion is relatively large in the failure of the light-emitting diode, especially in products with high reliability requirements. However, when the bonding wire fails, the failure point is difficult to find, and the failure analysis work cannot be continuously carried out.
Therefore, a new method for locating the failure of the light emitting diode is needed.
Disclosure of Invention
In view of the above, the disclosure is directed to a method for positioning failure of a light emitting diode.
Based on the above object, the present disclosure provides a method for positioning failure of a light emitting diode, wherein the light emitting diode has a plastic package structure, the method comprising:
the electrical performance test is used for testing the electrical parameters of the failed light emitting diode, and judging whether the failed light emitting diode is in connection failure or not according to the electrical parameters;
if yes, determining whether the package and the external pins are normal;
if yes, the ray test determines whether the internal pins and the chip are normal;
if yes, determining whether the bonding wire is internally broken or not by a ray test;
if so, thinning the plastic package structure and determining the fracture position of the bonding wire.
In some embodiments, further comprising: and removing the residual plastic package structure, exposing the bonding wire, analyzing the picture of the breakage of the bonding wire, and determining the reason of the breakage of the bonding wire.
In some embodiments, analyzing the microscopic image of the bond wire break, determining the cause of the bond wire break specifically includes:
analyzing the shape of a bonding wire break in the picture;
if at least one of microcracks, damage or small bonding area exists at the bonding wire fracture port, judging that the bonding wire fracture causes production factors;
if the bonding wire fracture port has the characteristics of fatigue fracture or tensile fracture, the reason of the bonding wire fracture is judged to be a using factor.
In some embodiments, the removing the residual plastic package structure, the bare bonding wire specifically includes:
and adopting concentrated sulfuric acid to corrode the residual plastic package structure dropwise until the necking part of the bonding point is exposed.
In some embodiments, the radiographic testing to determine whether to break inside the bond wire specifically includes:
and analyzing the light-emitting diode ray pictures, and determining whether the bonding wire is internally broken according to whether the outer part of the bonding wire is broken.
In some embodiments, the determining whether the bonding wire is internally broken comprises:
it is determined whether a suspected breakpoint exists inside the bond wire.
In some embodiments, the electrical parameter comprises: forward current and forward voltage; the electrical parameters of the electrical performance test failure light emitting diode specifically include:
and applying a specified forward voltage or current between the positive electrode pin and the negative electrode pin of the failed light-emitting diode, and detecting whether a forward current value or a forward voltage value exists.
In some embodiments, the determining whether the connection is failed according to the electrical parameter specifically includes:
judging whether the anode and the cathode of the light-emitting diode are in an open circuit state or a time-on and time-off state according to the forward current value and the forward voltage value;
if so, the connection fails.
In some embodiments, the ray testing to determine if the internal pins and chips are normal specifically includes:
and analyzing the LED ray pictures, determining whether the internal pins are deformed or broken, and determining whether the bonding positions of the chips are normal.
In some embodiments, the thinned plastic package structure specifically includes: and gradually thinning the plastic package structure by a grinding method until the inside of the bonding wire can be identified.
As can be seen from the above, the method for positioning failure of a light emitting diode provided by the present disclosure, wherein the light emitting diode has a plastic package structure, by: the electrical performance test is used for testing the electrical parameters of the failed light emitting diode, and judging whether the failed light emitting diode is in connection failure or not according to the electrical parameters; if yes, determining whether the package and the external pins are normal; if yes, the ray test determines whether the internal pins and the chip are normal; if so, the ray test determines if it is a bond wire internal break. The LED can be used for LEDs with various plastic package structures. Has the advantages of strong pertinence, simple operation, etc. Aiming at the structural characteristics of the light-emitting diode and the problem of bonding wire connection failure, failure points are gradually positioned in a mode of combining physical testing, mechanical grinding and chemical unsealing. The package of the surrounding organic matters has small gap of fracture crack, and the LED is in a time-on-off state, so that the bonding wire shape can be completely reserved, and the internal breakpoint of the bonding wire can be accurately analyzed. The necking part or the bonding point of the bonding point where the bonding wire connection failure usually occurs can be simply and efficiently analyzed.
Drawings
In order to more clearly illustrate the technical solutions of the present disclosure or related art, the drawings required for the embodiments or related art description will be briefly described below, and it is apparent that the drawings in the following description are only embodiments of the present disclosure, and other drawings may be obtained according to these drawings without inventive effort to those of ordinary skill in the art.
FIG. 1 is a flow chart of a method for locating LED failure according to an embodiment of the disclosure;
FIG. 2 is a schematic view of the appearance under a microscope of failed LEDs according to an embodiment of the present disclosure;
FIG. 3 is a ray diagram of a failed light emitting diode according to an embodiment of the present disclosure;
FIG. 4 is an apparent ray diagram of suspected break points for a failed LED according to an embodiment of the present disclosure;
FIG. 5 is a schematic view of a grinding profile of a negative electrode of a failed LED according to an embodiment of the disclosure;
fig. 6 is a schematic diagram of a failure led bonding wire fracture morphology according to an embodiment of the present disclosure.
Detailed Description
For the purposes of promoting an understanding of the principles and advantages of the disclosure, reference will now be made to the embodiments illustrated in the drawings and specific language will be used to describe the same.
It should be noted that unless otherwise defined, technical or scientific terms used in the embodiments of the present disclosure should be given the ordinary meaning as understood by one of ordinary skill in the art to which the present disclosure pertains. The use of the terms "comprising" or "including" and the like in embodiments of the present disclosure is intended to cover an element or article appearing before the term and equivalents thereof, which are listed after the term, without excluding other elements or articles. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect.
In practical application, from the structural aspect of the LED, transparent resin is generally used for filling, the chip in the device is sealed in the package, and the packaging function is mainly to complete electrical interconnection, protect the chip and output visible light. The inner square chip is adhered or sintered at the center of the lead frame reflecting cup, and the lead bonding connects the chip and the lead frame.
The chips of LEDs generally have two structures: one is a heterolateral electrode chip, such as a GaAs chip emitting red light and yellow light, and for the LED of the heterolateral electrode chip, the front electrode is connected with the device pins through bonding wires, and the back electrode is connected with the base pins through silver glue (or conductive glue); the other is a same-side electrode chip, such as a GaN chip emitting blue light and green light, and PN electrodes of the same-side electrode chip are connected with the pins of the device through bonding wires. The quality of the bond wire connection inside the LED plays a critical role for the electrical interconnection.
The filling material of LED is non-metal organic matter, and the bonding silk is the metal material of several tens micrometers, and the bonding silk is wrapped up by non-metal organic matter is whole, and there is great difference in the coefficient of thermal expansion between them, and after the LED has experienced temperature stress variation in the use, the difference of coefficient of expansion leads to the bonding silk to receive repeated tensile stress effect in junction with the chip, produces the crack fracture gradually, to LED connection failure. In order to solve the problem that the failure fault point of the bonding wire connection is difficult to confirm, the invention aims to accurately position the failure point of the bonding wire by adopting a scientific and reasonable positioning mode.
Referring to fig. 1, an embodiment of the disclosure provides a method for positioning failure of a light emitting diode, where the light emitting diode has a plastic package structure, the method includes:
s100, testing the electrical parameters of the failed light emitting diode, and judging whether the failed light emitting diode is connected according to the electrical parameters;
s200, if so, determining whether the package and the external pins are normal;
s300, if yes, determining whether the internal pins and the chip are normal or not through ray test;
s400, if so, determining whether the bonding wire is broken or not by a ray test;
s500, if not, thinning the plastic package structure and determining the breaking position of the bonding wire.
In some embodiments, the plastic package structure may be of various types, including: COB integrated package, LED wafer level package, COF integrated package, LED modular integrated package, flip chip package, EMC package, COG package, QFN package. The packaging material can be epoxy resin, epoxy plastic packaging material, silica gel, organic silicon plastic and the like.
In step S100, the electrical parameters include: forward current and forward voltage. The electrical parameters of the electrical performance test failure light emitting diode specifically include:
and applying a specified forward voltage or current between two pins of the failed light emitting diode, and detecting whether a forward current value or a forward voltage value exists.
The specific prescribed forward voltage or current may be determined based on the specific type of failed light emitting diode, such as by product specifications for the failed light emitting diode, etc. . The judging whether the connection is invalid according to the electrical parameter specifically comprises:
judging whether the anode and the cathode of the light-emitting diode are in an open circuit state or a time-on and time-off state according to the forward current value and the forward voltage value;
if so, the connection fails.
Judging whether the anode and the cathode of the light emitting diode are in an open circuit state or a time-on-time-off state according to the forward current value and the forward voltage value specifically comprises:
if the forward current value or the forward voltage value is not detected, the two electrodes are in a complete open circuit state;
if the forward current value or the forward voltage value is detected to be intermittently present, the two electrodes are in an incompletely open state.
In some embodiments, in step S200, determining whether the package and the external pins are normal may include: and determining whether the package and the pins are normal or not by analyzing the appearance state of the LED. Analysis of the appearance of the LED can be achieved by performing a visual analysis of the external features of the sample under a microscope. The external macroscopic feature of the device can be observed by using a stereo microscope under the condition of amplifying by 10 times to 100 times; and (3) performing inspection on the external microscopic features of the device under the condition of 50-1000 times of magnification by using a metallographic microscope. For example, determining whether the encapsulant is intact; whether the pins are complete, etc.
In some embodiments, in step S300, the testing to determine whether the internal pins and chips are normal specifically includes: and analyzing the LED ray pictures, determining whether the internal pins are deformed or broken, and determining whether the bonding positions of the chips are normal. The radiation pictures of the light emitting diode can comprise pictures of the front angle and pictures of the side angle of the light emitting diode.
In some embodiments, in step S400, the radiographic testing to determine whether the bond wire is internally broken specifically includes: and analyzing the light-emitting diode ray pictures, and determining whether the bonding wire is internally broken according to whether the outer part of the bonding wire is broken. That is, when the external morphology of the bonding wire is normal, there is no break, it is determined that the bonding wire is broken internally. The external morphology includes an external morphology of the body of the bonding wire and an external morphology of the necked position of the bonding wire. The exterior morphology of the necked-down location of the bonding wire may include the necked-down location of the bonding wire at the first bond point of the negative electrode; and a necked down position at a second bond point of the positive electrode. And judging that the bonding wire is not broken outside when the external shape of the body and the external shape of the necking position of the bonding wire are normal, and the bonding wire is broken inside.
In some embodiments, step S400 may further include: and analyzing the light-emitting diode ray picture, and determining whether a suspected breakpoint exists in the bonding wire according to whether a light-transmitting point exists in the light-emitting diode ray picture.
In some embodiments, in step S500, the plastic package structure may be gradually thinned until the morphology of the internal bonding wires can be identified. Specifically, the polishing can be performed by a grinding method. The packaging material is gradually thinned by a grinding method, so that the plastic packaging structure is gradually thinned, and the outer surface of the plastic packaging structure is enabled to be close to the bonding wire as much as possible without damaging the shape of the bonding wire. When the encapsulating material is thin to a predetermined extent, that is, the morphology of the internal bonding wires can be observed by an optical microscope.
Specifically, the gradual thinning may be a preset thickness of each thinning, for example, no more than 0.2mm each time. The packaging structure with the thickness is thinned every time, so that damage to the internal form of the bonding wire caused by too thick thinning can be avoided, too many thinning times caused by too thin thinning can be avoided, and the thinning efficiency is highest. Neither too cumbersome nor too poor in thinning effect.
In some embodiments, the method further comprises removing the residual plastic package structure, exposing the bonding wire, analyzing the picture of the bonding wire fracture crack, and determining the reason for the bonding wire fracture.
In some embodiments, analyzing the microscopic image of the bond wire break, determining the cause of the bond wire break specifically includes:
analyzing the shape of a bonding wire break in the picture;
if at least one of microcracks, damage, thinner thickness or smaller bonding area exists at the bonding wire fracture port, judging that the bonding wire fracture causes production factors;
if the bonding wire fracture port has the characteristics of fatigue fracture or tensile fracture, the reason of the bonding wire fracture is judged to be a using factor.
Wherein, the fatigue fracture can be characterized in that the surface of the accumulated damage fracture surface is smooth, and no obvious shaping deformation exists; the stretch-break may be characterized by a rough stretch-break surface, a presence of a plastic deformation, or the like.
It should be noted that the bond wire fracture port is mostly a necked portion of the bond wire. When the necking part at the first bonding point or the second bonding point is observed to have micro cracks, damage, thinner thickness, smaller bonding area or the like, the production factor is caused. Production factors, which are understood to be early defects belonging to the bonding process, are here relevant for production. The use factor results when the necked area at the bond point is observed to be a normal fatigue fracture or stretch-break characteristic. The use factor is understood to be related to the environmental stress of the actual use process.
In some embodiments, the removing the residual plastic package structure, the bare bonding wire specifically includes:
and adopting concentrated sulfuric acid to corrode the residual plastic package structure dropwise until the necking part of the bonding point is exposed. It can be understood that, specifically, the light emitting diode with the residual plastic package structure is subjected to drop-by-drop corrosion by using concentrated sulfuric acid, and after the necking part of the bonding point is exposed visually, the corrosion is stopped in the application scene, and the residual package structure can be removed by using a chemical unsealing method. For different LED chips, the corresponding chemical reagent is selected according to the specific packaging material and bonding wire material. The chemical agent should be kept from producing significant corrosion to the bonding wire as much as possible.
The method for locating the failure of the light emitting diode of the present disclosure is described in further detail below with reference to specific embodiments.
Examples
The device used in the embodiment of the disclosure is a plastic package diode, and the device is determined to be on and off between two electrodes through an electrical property test and is in an unstable connection state. The appearance inspection of the device encapsulation material and the external pin leading-out terminal is complete, no obvious abnormality is seen, and the appearance is shown in figure 2. Analyzing that the necking position 610 of the first bonding point on the surface of the diode chip and the external morphology of the bonding wire body are not obviously abnormal through radiographic image, wherein the necking position 620 of the second bonding point of the positive electrode and the pin are not de-bonded, as shown in fig. 3; but a suspected break 630 exists inside the necked down portion of the bond wire as shown in figure 4. The ray morphology was observed after chemical unsealing to separate the diode bond wire from the bond point at the necked down portion of the second bond point, the necked down portion being flat, the morphology being as shown in fig. 5, wherein the negative electrode lead 640, the diode chip 650. The failure of the led thus located is due to the bond wire breaking at the necked down portion of the second bond site. A picture of a bond wire break is shown in fig. 6, and by analyzing the picture, the bond wire break has fatigue fracture characteristics, i.e., the necked-down portion of the bond wire is flat and the break is thinnest. Therefore, it is determined that the cause of the fracture of the bond wire fracture opening is a factor of use, that is, a crack is generated by an external environmental stress during use and propagates to the fracture.
The LED failure positioning method provided by the embodiment of the invention can be used for LEDs with various plastic package structures. Has the advantages of strong pertinence, simple operation, etc. Aiming at the structural characteristics of the light-emitting diode and the problem of bonding wire connection failure, failure points are gradually positioned in a mode of combining physical testing, mechanical grinding and chemical unsealing. The package of the surrounding organic matters has small gap of fracture crack, and the LED is in a time-on-off state, so that the bonding wire shape can be completely reserved, and the internal breakpoint of the bonding wire can be accurately analyzed. The necking part of the bonding point where the bonding wire connection failure usually occurs can be simply and efficiently analyzed.
It should be noted that the foregoing describes some embodiments of the present disclosure. Other embodiments are within the scope of the following claims. In some cases, the actions or steps recited in the claims may be performed in a different order than in the embodiments described above and still achieve desirable results. In addition, the processes depicted in the accompanying figures do not necessarily require the particular order shown, or sequential order, to achieve desirable results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.
Those of ordinary skill in the art will appreciate that: the discussion of any of the embodiments above is merely exemplary and is not intended to suggest that the scope of the disclosure, including the claims, is limited to these examples; the technical features of the above embodiments or in the different embodiments may also be combined under the idea of the present disclosure, the steps may be implemented in any order, and there are many other variations of the different aspects of the embodiments of the present disclosure as described above, which are not provided in details for the sake of brevity.
Additionally, well-known power/ground connections to Integrated Circuit (IC) chips and other components may or may not be shown within the provided figures, in order to simplify the illustration and discussion, and so as not to obscure the embodiments of the present disclosure. Furthermore, the devices may be shown in block diagram form in order to avoid obscuring the embodiments of the present disclosure, and this also accounts for the fact that specifics with respect to implementation of such block diagram devices are highly dependent upon the platform on which the embodiments of the present disclosure are to be implemented (i.e., such specifics should be well within purview of one skilled in the art). Where specific details (e.g., circuits) are set forth in order to describe example embodiments of the disclosure, it should be apparent to one skilled in the art that embodiments of the disclosure can be practiced without, or with variation of, these specific details. Accordingly, the description is to be regarded as illustrative in nature and not as restrictive.
While the present disclosure has been described in conjunction with specific embodiments thereof, many alternatives, modifications, and variations of those embodiments will be apparent to those skilled in the art in light of the foregoing description. For example, other memory architectures (e.g., dynamic RAM (DRAM)) may use the embodiments discussed.
The disclosed embodiments are intended to embrace all such alternatives, modifications and variances which fall within the broad scope of the appended claims. Accordingly, any omissions, modifications, equivalents, improvements, and the like, which are within the spirit and principles of the embodiments of the disclosure, are intended to be included within the scope of the disclosure.
Claims (4)
1. A method for locating a failure of a light emitting diode, wherein the light emitting diode has a plastic package structure, the method comprising:
the electrical performance test is used for testing the electrical parameters of the failed light emitting diode, and judging whether the failed light emitting diode is in connection failure or not according to the electrical parameters;
if yes, determining whether the package and the external pins are normal;
if yes, the ray test determines whether the internal pins and the chip are normal;
if yes, determining whether the bonding wire is internally broken or not by a ray test;
if yes, thinning the plastic package structure and determining the fracture position of the bonding wire;
wherein said determining if the bonding wire is internally broken comprises:
determining whether a suspected breakpoint exists inside the bonding wire;
the thinning plastic packaging structure specifically comprises: gradually thinning the plastic package structure by a grinding method until the inside of the bonding wire can be identified; the gradual thinning is not more than 0.2mm for each thinning;
further comprises: removing the residual plastic package structure, exposing the bonding wire, analyzing the picture of the broken opening of the bonding wire, and determining the reason of the breakage of the bonding wire; the plastic package structure for removing the residues comprises a bare bonding wire, wherein the bare bonding wire comprises: adopting concentrated sulfuric acid to corrode the residual plastic package structure dropwise until the necking part of the bonding point is exposed;
the method for determining the reasons of the bond wire breakage specifically comprises the following steps of:
analyzing the shape of a bonding wire break in the picture;
if at least one of microcracks, damage or small bonding area exists at the bonding wire fracture port, judging that the bonding wire fracture causes production factors;
if the bonding wire fracture port has the characteristics of fatigue fracture or tensile fracture, judging that the reason of the bonding wire fracture is a use factor; the fatigue fracture is characterized in that the surface of the accumulated damage fracture surface is smooth, and no plastic deformation exists; the stretch-break is characterized in that the surface of the stretch-break is rough and has plastic deformation;
the electrical parameters include: at least one of a forward current and a forward voltage; the electrical parameters of the electrical performance test failure light emitting diode specifically include:
and applying a specified forward voltage or current between the positive electrode pin and the negative electrode pin of the failed light-emitting diode, and detecting whether a forward current value or a forward voltage value exists.
2. The method of claim 1, wherein the testing to determine if the bond wire internal fracture is present comprises:
and analyzing the light-emitting diode ray pictures, and determining whether the bonding wire is internally broken according to whether the outer part of the bonding wire is broken.
3. The method for positioning a failure of a light emitting diode according to claim 1, wherein the determining whether the connection failure is specific according to the electrical parameter comprises:
judging whether the anode and the cathode of the light-emitting diode are in an open circuit state or a time-on and time-off state according to the forward current value and the forward voltage value;
if so, the connection fails.
4. The method of claim 1, wherein the testing to determine if the internal pins and chips are normal comprises:
and analyzing the LED ray pictures, determining whether the internal pins are deformed or broken, and determining whether the bonding positions of the chips are normal.
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| US5111137A (en) * | 1990-10-29 | 1992-05-05 | Hewlett-Packard Company | Method and apparatus for the detection of leakage current |
| US6087842A (en) * | 1996-04-29 | 2000-07-11 | Agilent Technologies | Integrated or intrapackage capability for testing electrical continuity between an integrated circuit and other circuitry |
| JP2004233171A (en) * | 2003-01-29 | 2004-08-19 | Nec Semiconductors Kyushu Ltd | Assembly failure analytical device of semiconductor device and its failure analytical method |
| US7279921B1 (en) * | 2005-06-08 | 2007-10-09 | National Semiconductor Corporation | Apparatus and method for testing power and ground pins on a semiconductor integrated circuit |
| KR101168316B1 (en) * | 2009-12-01 | 2012-07-25 | 삼성전자주식회사 | Apparatus for inspecting light emitting diode |
| JP2012028686A (en) * | 2010-07-27 | 2012-02-09 | Nitto Denko Corp | Light emitting apparatus inspection method, and light emitting apparatus processing method after inspection |
| US8933722B2 (en) * | 2011-08-31 | 2015-01-13 | Infineon Technologies Ag | Measuring device and a method for measuring a chip-to-chip-carrier connection |
| CN106098913B (en) * | 2016-06-29 | 2019-04-02 | 深圳市源磊科技有限公司 | A method of white light LEDs trial is improved than testing efficiency |
| CN106770502A (en) * | 2017-01-03 | 2017-05-31 | 航天科工防御技术研究试验中心 | A kind of position finding and detection method of capacitance short-circuit failure |
| CN106872575B (en) * | 2017-01-05 | 2020-01-14 | 航天科工防御技术研究试验中心 | Grading risk evaluation method for layered defects of plastic package device |
| CN108169651B (en) * | 2017-11-22 | 2021-05-11 | 北京无线电计量测试研究所 | Clock crystal oscillator detection method |
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| CN109632791B (en) * | 2018-11-12 | 2022-03-25 | 航天科工防御技术研究试验中心 | Method for evaluating bonding quality of semiconductor device bonding wire |
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