CN112909023A - Display panel, preparation method thereof and display device - Google Patents
Display panel, preparation method thereof and display device Download PDFInfo
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- CN112909023A CN112909023A CN202110124885.6A CN202110124885A CN112909023A CN 112909023 A CN112909023 A CN 112909023A CN 202110124885 A CN202110124885 A CN 202110124885A CN 112909023 A CN112909023 A CN 112909023A
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- 238000002360 preparation method Methods 0.000 title abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 106
- 239000002184 metal Substances 0.000 claims abstract description 106
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 259
- 239000011248 coating agent Substances 0.000 claims description 33
- 238000000576 coating method Methods 0.000 claims description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 239000000084 colloidal system Substances 0.000 claims description 24
- 229910052681 coesite Inorganic materials 0.000 claims description 19
- 229910052906 cristobalite Inorganic materials 0.000 claims description 19
- 239000000377 silicon dioxide Substances 0.000 claims description 19
- 229910052682 stishovite Inorganic materials 0.000 claims description 19
- 229910052905 tridymite Inorganic materials 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 238000005240 physical vapour deposition Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 5
- 238000009210 therapy by ultrasound Methods 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 239000011247 coating layer Substances 0.000 claims 1
- 230000009471 action Effects 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 8
- 239000010408 film Substances 0.000 description 15
- 230000008569 process Effects 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
Abstract
The invention discloses a display panel, a preparation method thereof and a display device. The display panel comprises a source drain layer, an active layer connected with the source drain layer and a grid layer corresponding to the active layer; and the source drain layer and/or the grid layer are/is a metal grid layer. The method includes providing a substrate; and forming a metal layer on the substrate, and processing the metal layer to form a metal grid layer, wherein the metal grid layer comprises a grid layer or a source drain layer. Cracks are easy to appear on a source drain electrode or a grid electrode metal layer of the display panel under the action of external force, so that the display effect is influenced; the invention provides a display panel, a preparation method thereof and a display device, wherein the conventional source drain or grid is changed into a latticed structure from whole metal, so that stress concentration is avoided, and the influence of mechanical deformation on the display performance of the display panel is improved.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display panel, a preparation method of the display panel and a display device.
Background
As the size of the liquid crystal display is increased, the driving frequency is also increased, and the electron mobility (mobility is the average drift velocity of electrons in a unit electric field, which can be understood as the conductive capability) of the conventional amorphous silicon thin film transistor is difficult to meet the requirement and has poor uniformity. In contrast, Indium Gallium Zinc Oxide (IGZO) thin film transistors have several characteristics that are attractive, including large electron mobility at low process temperatures, and excellent uniformity and surface flatness. Especially for IGZO products of flexible substrates, there is now an increasing interest. The flexible substrate is mainly characterized in that the flexible substrate can be bent at will, but cracks are easy to appear on a source drain electrode or a grid electrode metal layer under the action of external force, and the cracks are diffused to a channel to cause the electrical property of a device to be reduced, so that the display effect is influenced.
Disclosure of Invention
The invention aims to solve the problem that a source drain electrode or a grid metal layer of a display panel is easy to crack under the action of external force, so that the display effect is influenced; the invention provides a display panel, a preparation method thereof and a display device, wherein the conventional source drain or grid is changed into a latticed structure from whole metal, so that stress concentration is avoided, and the influence of mechanical deformation on the display performance of the display panel is improved.
In order to achieve the above object, an embodiment of the present invention provides a display panel, where the display panel includes a source/drain layer, an active layer connected to the source/drain layer, and a gate layer corresponding to the active layer;
and the source drain layer and/or the grid layer are/is a metal grid layer.
In some embodiments, the metal mesh layer includes a plurality of meshes, and the plurality of meshes are different in shape.
In some embodiments, the material of the metal mesh layer is Mo/Cu or Mo/Al, and the active layer includes a metal oxide semiconductor layer.
The embodiment of the invention provides a preparation method of a display panel, which comprises the following steps:
providing a substrate;
and forming a metal layer on the substrate, and processing the metal layer to form a metal grid layer, wherein the metal grid layer comprises a grid layer or a source drain layer.
In some embodiments, the step of processing the metal layer to form the metal mesh layer includes:
coating a coating on the substrate, and treating the coating to form the network cracks;
forming a metal layer on the coating; and
treating the coating to peel off portions of the coating and portions of the metal layer to form the metal mesh layer.
In some embodiments, the coating is SiO2A colloid, wherein,
the step of applying the coating on the substrate and treating the coating to form the network of cracks includes: spin coating the SiO on the substrate2Colloid to the SiO2Drying the colloid to form the reticular cracks;
the step of treating the coating to peel off a portion of the coating and a portion of the metal layer to form the metal mesh layer comprises: for the SiO2Subjecting the colloid to pure water ultrasonic treatment to strip off part of the SiO2The colloid and a part of the metal layer form the metal grid layer;
wherein the metal mesh layer comprises a plurality of meshes, and the shapes of the meshes are different.
In some embodiments, the material of the metal mesh layer is Mo/Cu or Mo/Al.
In some embodiments, the method for manufacturing a display panel further includes:
forming an IGZO film layer on the substrate through physical vapor deposition;
carrying out post-heating annealing treatment on the IGZO film layer; and
and patterning the IGZO film layer to form the active layer, wherein the active layer is connected to the source drain layer and corresponds to the gate layer.
In some embodiments, the display panel further comprises a buffer layer on the substrate and a gate insulating layer between the gate layer and the active layer, the gate layer is on the buffer layer, the active layer is on the gate layer, and the source and drain layers are on the active layer; the buffer layer is formed through silicon nitride or silicon oxide chemical vapor deposition, and the grid electrode insulating layer is formed through silicon nitride or silicon oxide chemical vapor deposition.
The embodiment of the invention further provides a display device, which comprises the display panel described in the foregoing embodiment or the display panel prepared by the method described in the foregoing embodiment.
Has the advantages that: the invention discloses a display panel, a preparation method thereof and a display device. The display panel comprises a source drain layer, an active layer connected with the source drain layer and a grid layer corresponding to the active layer; and the source drain layer and/or the grid layer are/is a metal grid layer. The method includes providing a substrate; and forming a metal layer on the substrate, and processing the metal layer to form a metal grid layer, wherein the metal grid layer comprises a grid layer or a source drain layer. Cracks are easy to appear on a source drain electrode or a grid electrode metal layer of the display panel under the action of external force, so that the display effect is influenced; the invention provides a display panel, a preparation method thereof and a display device, wherein the conventional source drain or grid is changed into a latticed structure from whole metal, so that stress concentration is avoided, and the influence of mechanical deformation on the display performance of the display panel is improved.
Drawings
The technical solution and other advantages of the present invention will become apparent from the following detailed description of specific embodiments of the present invention, which is to be read in connection with the accompanying drawings.
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
FIGS. 2 a-2 f are flowcharts illustrating a hierarchical structure of a method for fabricating a display panel according to an embodiment of the present invention;
fig. 3a to fig. 3d are top views of a hierarchical structure of a method for manufacturing a display panel according to an embodiment of the invention.
Reference numerals:
100-a display panel; 10-a substrate; 11-a buffer layer; 12-a gate insulating layer; 13-a gate layer; 14-a source drain layer; 15-an active layer; 20-SiO2A colloid; 21-a metal layer; 22-metal mesh layer.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the invention. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or uses of other materials.
Specifically, referring to fig. 1, the present invention provides a display panel 100, where the display panel 100 includes a source/drain electrode layer 14, an active layer 15 connected to the source/drain electrode layer 14, and a gate layer 13 corresponding to the active layer 15;
the source drain layer 14 and/or the gate layer 13 are/is a metal mesh layer 22.
It can be understood that the existing flexible substrate can be bent at will, but cracks are easy to appear on the source/drain electrodes or the gate metal layer under the action of external force, and the cracks are spread to the channel, so that the electrical property of the device is reduced, and the display effect is influenced. In contrast, the display panel 100 of the present invention includes a source/drain layer 14, an active layer 15 connected to the source/drain layer 14, and a gate layer 13 corresponding to the active layer 15; the source drain layer 14 and/or the gate layer 13 are/is a metal mesh layer 22. The specific corresponding structure of the gate layer 13 and the active layer 15 may be a top gate type or a bottom gate type, and is not limited in particular. The metal mesh structure can increase the covering performance of the surfaces of the source drain electrode layer 14 and the gate electrode layer 13, so that the bending stress of the surfaces of the source drain electrode layer 14 and the gate electrode layer 13 is more dispersed under the action of a bending external force, the possibility of cracks in the source drain electrode layer 14 and the gate electrode layer 13 is reduced, even if cracks are generated in the source drain electrode layer 14 or the gate electrode layer 13, the discontinuity characteristic of the mesh structure can also block the further expansion and extension of the cracks, and the influence of the cracks on the display effect of the display panel 100 after the cracks are diffused to a channel is avoided. The improved structure of the display panel 100 is to change the source/drain layer 14 and the gate layer 13 from the original whole metal to a grid structure, so as to avoid stress concentration and improve the influence of mechanical deformation on the display performance of the display panel.
The display panel 100 further includes a buffer layer 11 located on the substrate 10 and a gate insulating layer 12 located between the gate layer 13 and the active layer 15, where the gate layer 13 is located on the buffer layer 11, the active layer 15 is located on the gate layer 13, and the source drain layer 14 is located on the active layer 15. The display panel 100 may be a flexible display panel having a flexible and foldable structure, implementing a foldable or curling function, and is suitable for a foldable terminal. The display panel 100 may be an OLED display panel, an LCD display panel, a QD-MiniLED display panel, a perovskite-micro led display panel, or the like.
In some embodiments, the metal mesh layer 22 includes a plurality of meshes, and the shapes of the plurality of meshes are different. The material of the metal grid layer 22 is Mo/Cu or Mo/Al.
It is understood that the metal mesh layer 22 may be a double metal layer structure, and the material used may be selected from Mo/Cu or Mo/Al. The metal mesh layer 22 includes a plurality of meshes, that is, the plurality of meshes are connected to each other to form the metal mesh layer 22, and the shapes of the plurality of meshes may be different, and the specific shape may be at least one or more of a rectangle, a triangle, a hexagon, a circle, and the like. Compared with a full-surface continuous metal layer, the metal grid line structure has better interlayer coverage, higher tensile strength and compressive strength, is not easy to form cracks generated by stress concentration, and improves the influence of mechanical deformation on the display performance of the display panel 100.
In some embodiments, the active layer 15 includes a metal oxide semiconductor layer.
It is understood that the active layer 15 includes a metal oxide semiconductor layer, and in particular, the active layer 15 may be formed by forming an IGZO film layer through IGZO physical vapor deposition, annealing the IGZO film layer through Clean and Dry compressed Air (CDA) at a heating temperature of 350 ℃, and wet etching the IGZO film layer after patterning the IGZO film layer with yellow light. The semiconductor active layer 15 made of IGZO material has a low process temperature and a large electron mobility, and is excellent in uniformity, surface flatness, and the like.
Referring to fig. 2a to fig. 3d, an embodiment of the invention provides a method for manufacturing a display panel 100, including:
providing a substrate 10;
forming a metal layer 21 on the substrate 10, and processing the metal layer 21 to form a metal grid layer 22, where the metal grid layer 22 includes a gate layer 13 or a source drain layer 14.
It can be understood that the existing flexible substrate can be bent at will, but cracks are easy to appear on the source/drain electrodes or the gate metal layer under the action of external force, and the cracks are spread to the channel, so that the electrical property of the device is reduced, and the display effect is influenced. In this regard, the method of manufacturing the display panel 100 of the present invention includes providing a substrate 10; the substrate 10 may be a Polyimide (PI) substrate. Forming a metal layer 21 on the substrate 10, forming the metal layer 21 by physical vapor deposition, forming a required pattern by yellow light, and performing wet etching to form a metal grid layer 22; the metal grid layer 22 includes a grid layer 13 or a source drain layer 14, and the source drain layer 14 and the grid layer 13 are changed from the original whole metal into a grid structure, so that stress concentration is avoided, and the influence of mechanical deformation on the display performance of the display panel is improved.
In some embodiments, the display panel 100 further includes a buffer layer 11 on the substrate 10, and the substrate 10 and the buffer layer 11 can block moisture influence; a gate insulating layer 12 located between the gate layer 13 and the active layer 15, wherein the gate layer 13 is located on the buffer layer 11, the active layer 15 is located on the gate layer 13, and the source drain layer 14 is located on the active layer 15; the buffer layer 11 is formed by silicon nitride or silicon oxide chemical vapor deposition, and the gate insulating layer 12 is formed by silicon nitride or silicon oxide chemical vapor deposition. The display panel 100 may be a flexible display panel having a flexible and foldable structure, implementing a foldable or curling function, and is suitable for a foldable terminal. The display panel 100 may be an OLED display panel, an LCD display panel, a QD-MiniLED display panel, a perovskite-micro led display panel, or the like.
In some embodiments, the step of processing the metal layer 21 to form the metal mesh layer 22 includes:
coating the substrate 10 with a coating which is treated to form network cracks;
forming a metal layer 21 on the coating; and
the coating is treated to peel off portions of the coating and portions of the metal layer 21 to form the metal mesh layer 22.
Specifically, the coating is SiO2A colloid, wherein,
the step of coating the coating on the substrate 10, and the step of treating the coating to form the network cracks includes: spin coating the SiO on the substrate 102 Colloid 20 to said SiO2The colloid 20 is dried to form the network cracks;
the processing the coating to peel off a portion of the coating and a portion of the metal layer 21 to form the metal mesh layer 22 includes: for the SiO2Purifying the colloid 20Water ultrasonic treatment to strip off part of the SiO2Colloid 20 and part of metal layer 21 to form the metal grid layer 22;
wherein the metal mesh layer 22 includes a plurality of meshes, and the shapes of the plurality of meshes are different.
The material of the metal grid layer 22 is Mo/Cu or Mo/Al.
It will be appreciated that SiO is spin-coated on the surface of the substrate 102 Colloid 20, said SiO2The colloid 20 is dried due to SiO2Colloids 20 are aggregated in islands, the SiO2The colloid 20 generates a large number of cracks which are distributed in a net shape on the SiO2In the layer of colloid 20, a metal layer 21 is then deposited by physical vapour deposition, since the SiO2A large number of cracks exist in the colloid 20, and metal materials are naturally deposited and connected in crack gaps. For the SiO2The colloid 20 is subjected to pure water ultrasonic treatment, and cracked SiO can be removed by utilizing the principle of ultrasonic vibration cleaning2The colloid 20 is stripped off, and the metal mesh layer 22 is formed after removing part of the metal layer 21. The metal mesh layer 22 is subjected to yellow light to form a pattern, and is further subjected to wet etching to be used as the source/drain layer 14 or the gate layer 13 of the display panel 100. The metal mesh layer 22 may be a double-layer metal layer structure, and the material used may be Mo/Cu or Mo/Al. The metal mesh layer 22 includes a plurality of meshes, that is, the plurality of meshes are connected to each other to form the metal mesh layer 22, and the shapes of the plurality of meshes may be different, and the specific shape may be at least one or more of a rectangle, a triangle, a hexagon, a circle, and the like. Compared with a full-surface continuous metal layer, the metal grid line structure has better interlayer coverage, higher tensile strength and compressive strength, is not easy to form cracks generated by stress concentration, and improves the influence of mechanical deformation on the display performance of the display panel 100.
In some embodiments, the method for manufacturing the display panel 100 further includes:
forming an IGZO film layer on the substrate 10 by physical vapor deposition;
carrying out post-heating annealing treatment on the IGZO film layer; and
and patterning the IGZO film layer to form the active layer 15, wherein the active layer 15 is connected to the source and drain electrode layer 14 and corresponds to the gate layer 13.
It is understood that the active layer 15 includes a metal oxide semiconductor layer, and in particular, the active layer 15 may be formed by forming an IGZO film layer through IGZO physical vapor deposition, heating the IGZO film layer to 350 ℃ in a heating chamber, annealing the IGZO film layer by applying Clean and Dry compressed Air (CDA) in the chamber, and then wet etching the IGZO film layer after patterning the IGZO film layer using yellow light. The semiconductor active layer 15 made of IGZO material has a low process temperature and a large electron mobility, and is excellent in uniformity, surface flatness, and the like.
An embodiment of the present invention further provides a display device, which includes the display panel described in any one of the previous embodiments or the display panel prepared by the method described in any one of the previous embodiments. The display device can be a fixed terminal display device, such as a computer, a household television and intelligent household equipment; or a mobile terminal display device, such as a mobile phone, a tablet computer, a navigator, a digital camera; and may be a wearable terminal display device, such as a sports watch, virtual reality wearable device. The specific structure of the display device can refer to the embodiment of the display panel described in any of the previous embodiments or the embodiment of the display panel prepared by the method described in any of the previous embodiments and fig. 1 to 3d, and details are not repeated herein.
The invention discloses a display panel, a preparation method thereof and a display device. The display panel comprises a source drain layer, an active layer connected with the source drain layer and a grid layer corresponding to the active layer; and the source drain layer and/or the grid layer are/is a metal grid layer. The method includes providing a substrate; and forming a metal layer on the substrate, and processing the metal layer to form a metal grid layer, wherein the metal grid layer comprises a grid layer or a source drain layer. Cracks are easy to appear on a source drain electrode or a grid electrode metal layer of the display panel under the action of external force, so that the display effect is influenced; the invention provides a display panel, a preparation method thereof and a display device, wherein the conventional source drain or grid is changed into a latticed structure from whole metal, so that stress concentration is avoided, and the influence of mechanical deformation on the display performance of the display panel is improved.
The display panel, the manufacturing method thereof, and the display device provided in the embodiments of the present invention are described in detail above, and the principles and embodiments of the present invention are explained herein by applying specific examples, and the description of the above embodiments is only used to help understanding the technical solutions and the core ideas of the present invention; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. The display panel is characterized by comprising a source drain layer, an active layer connected with the source drain layer and a grid layer corresponding to the active layer;
and the source drain layer and/or the grid layer are/is a metal grid layer.
2. The display panel of claim 1, wherein the metal mesh layer comprises a plurality of meshes, and a shape of the plurality of meshes is different.
3. The display panel according to claim 1, wherein the material of the metal mesh layer is Mo/Cu or Mo/Al, and the active layer includes a metal oxide semiconductor layer.
4. A method for manufacturing a display panel, comprising:
providing a substrate;
and forming a metal layer on the substrate, and processing the metal layer to form a metal grid layer, wherein the metal grid layer comprises a grid layer or a source drain layer.
5. The method for manufacturing a display panel according to claim 4, wherein the step of processing the metal layer to form the metal mesh layer comprises:
coating a coating on the substrate, and treating the coating to form the network cracks;
forming a metal layer on the coating; and
treating the coating to peel off portions of the coating and portions of the metal layer to form the metal mesh layer.
6. The method of manufacturing a display panel according to claim 5, wherein the coating layer is SiO2A colloid, wherein,
the step of coating a coating on the substrate and treating the coating to form the network cracks comprises: spin coating the SiO on the substrate2Colloid to the SiO2Drying the colloid to form the reticular cracks;
the step of treating the coating to peel off a portion of the coating and a portion of the metal layer to form the metal mesh layer comprises: for the SiO2Subjecting the colloid to pure water ultrasonic treatment to strip off part of the SiO2The colloid and a part of the metal layer form the metal grid layer;
wherein the metal mesh layer comprises a plurality of meshes, and the shapes of the meshes are different.
7. The method of manufacturing a display panel according to claim 4, wherein the material of the metal mesh layer is Mo/Cu or Mo/Al.
8. The method for manufacturing a display panel according to claim 4, further comprising:
forming an IGZO film layer on the substrate through physical vapor deposition;
carrying out post-heating annealing treatment on the IGZO film layer; and
and patterning the IGZO film layer to form the active layer, wherein the active layer is connected to the source drain layer and corresponds to the gate layer.
9. The method for manufacturing a display panel according to claim 8, wherein the display panel further comprises a buffer layer over the substrate and a gate insulating layer between the gate layer and the active layer, the gate layer is over the buffer layer, the active layer is over the gate layer, and the source and drain layers are over the active layer; the buffer layer is formed through silicon nitride or silicon oxide chemical vapor deposition, and the grid electrode insulating layer is formed through silicon nitride or silicon oxide chemical vapor deposition.
10. A display device comprising the display panel according to any one of claims 1 to 3 or the display panel produced by the method according to any one of claims 4 to 9.
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