CN106876261A - A kind of flexible conductive wire, and its preparation method and application - Google Patents

A kind of flexible conductive wire, and its preparation method and application Download PDF

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Publication number
CN106876261A
CN106876261A CN201510917796.1A CN201510917796A CN106876261A CN 106876261 A CN106876261 A CN 106876261A CN 201510917796 A CN201510917796 A CN 201510917796A CN 106876261 A CN106876261 A CN 106876261A
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Prior art keywords
microballoon
flexible conductive
conductive wire
flexible
prepare
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CN106876261B (en
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袁波
刘玉成
高胜
赵长征
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Chengdu Vistar Optoelectronics Co Ltd
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Kunshan New Flat Panel Display Technology Center Co Ltd
Kunshan Guoxian Photoelectric Co Ltd
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
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    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
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    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L2021/775—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate comprising a plurality of TFTs on a non-semiconducting substrate, e.g. driving circuits for AMLCDs

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Abstract

The present invention relates to a kind of preparation method of flexible conductive wire, comprise the steps：S11：Microballoon dispersion liquid is prepared, microballoon is added in solvent, be uniformly dispersed and obtain microballoon dispersion liquid；S12：Microsphere template array is prepared, by microballoon dispersion on substrate, removal solvent is dried, microsphere template array is obtained；S13：Deposited metal line, to deposited metal layer on microsphere template, the metal level filled in the gap between the microsphere surface and microballoon forms the metal film with network structure；S14, formation flexible conductive wire, after removal substrate and microballoon, then the flexible conductive wire that the metal film with network structure is etched into predetermined shape.Resistivity can keep stabilization in the flexible conductive wire BENDING PROCESS that the present invention is provided, and extend the life-span of flexible back plate.

Description

A kind of flexible conductive wire, and its preparation method and application
Technical field
The present invention relates to flexible display apparatus field, and in particular to a kind of suitable for flexible display apparatus Flexible conductive wire and preparation method thereof, and it is provided with the flexible back plate and its system of this flexible conductive Preparation Method.
Background technology
With continuing to develop for Display Technique, OLED (Organic Light Emitting Diode) because its luminosity is high, The advantages of rich color, low-voltage direct driving, preparation process is simple, it is increasingly becoming the heat of international research Point.OLED field ranges are wider, can be made into larger sized product, can meet user to different chis Very little requirement.The advantage of above-mentioned protrusion determines that OLED will turn into the main flow of Display Technique of future generation. With the development of material technology, display screen can be fabricated to flexible form.It is aobvious using flexibility The equipment of display screen has many good qualities, such as easy to carry, flexible, freely deformable etc..But it is soft Property backboard inside metal wire in the bent state resistance be susceptible to huge change even be broken, from And influence the life-span of screen body.
For solve the problems, such as electric wire be broken, CN203025453U disclose array base palte as shown in Figure 1 and , be set to metal level 1 with zigzag fashion at metal wire overlapping place, to prevent from climbing by display device Metal level 2 is broken during slope.The patent only address only breakage problem when metal wire is climbed, but golden Can still there is breakage problem when alternating bending is carried out in category line.
The content of the invention
Therefore, the technical problems to be solved by the invention are inside the existing flexible back plate of prior art Resistance is susceptible to huge the change even problem of fracture to metal wire in the bent state, there is provided a kind of Flexible conductive wire.Resistivity can keep stabilization in described flexible conductive wire BENDING PROCESS, extend The life-span of flexible back plate.
In order to solve the above technical problems, the present invention is adopted the following technical scheme that：
A kind of preparation method of flexible conductive wire, comprises the steps：
S11：Prepare microballoon dispersion liquid
Microballoon is added in solvent, is uniformly dispersed and is obtained microballoon dispersion liquid；
S12：Prepare microsphere template array
By microballoon dispersion on substrate, removal solvent is dried, obtain microsphere template array；
S13：Deposited metal line
To deposited metal layer on microsphere template, filled in the gap between the microsphere surface and microballoon Metal level forms the metal film with network structure；
S14, formation flexible conductive wire
After removal substrate and microballoon, then the metal film with network structure is etched into the soft of predetermined shape Property conductor wire.
Described step S11 is：Microballoon is added in water or in organic solution, surface-active is added Microballoon is uniformly distributed in solution by sonic oscillation after agent and forms microballoon dispersion liquid.
A diameter of 12nm-3um of described microballoon.
The concentration of the microballoon is 0.01-0.15wt%.
Described microballoon is polystyrene microsphere or silicon dioxide microsphere.
Described step S14 is：Sonic oscillation or high annealing, remove microballoon in the solution, then Vacuum annealing treatment is carried out, the metal film with network structure is obtained, then by the gold with network structure Category film is etched into the flexible conductive wire of predetermined shape.
Metal level in the step S3 is the one kind in copper, aluminium, molybdenum or titanium or wherein several combinations.
The flexible conductive wire that a kind of preparation method of the flexible conductive wire is prepared.
A kind of flexible back plate, including flexible substrate and formation bottom gate type TFT on flexible substrates, institute State TFT include formed on flexible substrates grid layer, gate insulator, polysilicon semiconductor layer, Interlayer insulating film and source/drain electrode layer, described grid layer and/or source/drain electrode layer are claim 1-6 Any described flexible conductive wire.
A kind of preparation method of described flexible back plate, comprises the steps：
S21, prepare grid layer
Flexible conductive wire is prepared as grid layer according to any described methods of claim 1-6；
S22, prepare gate insulator, polysilicon semiconductor layer and interlayer insulating film
Gate insulator, polysilicon semiconductor layer and interlayer are deposited on grid layer prepared by step S21 Insulating barrier, and etching interlayer insulating film formation contact hole makes the polysilicon semiconductor layer exposed；
S22, prepare source-drain electrode layer
The contact hole to be formed is etched according to described method and step S21 prepare flexible conductive wire as source and drain Pole.
A kind of flexible back plate, including flexible substrate and formation top gate type TFT on flexible substrates, institute Stating TFT includes the active layer, gate insulator, interlayer insulating film, the grid that are formed on flexible substrates Layer and source/drain electrode layer, described grid layer and/or source/drain electrode layer are claim 1-6 any described Flexible conductive wire.
A kind of preparation method of described flexible back plate, comprises the steps：
S31, prepare active layer and gate insulator
Active layer and gate insulator are deposited on flexible substrates；
S32, prepare grid layer
According to any described methods of claim 1-6 compliant conductive is prepared on the gate insulator Line is used as grid layer；
S33, prepare interlayer insulating film
Interlayer insulating film is deposited on the basis of the step S32, and etches the interlayer insulating film and grid Pole insulating barrier forms contact hole makes the active layer exposed；
S34, prepare source-drain electrode layer
The contact hole to be formed is etched in the step S34 prepare flexible conductive wire work according to described method It is source-drain electrode.
Above-mentioned technical proposal of the invention has advantages below compared to existing technology：
The preparation method of the flexible conductive wire that the present invention is provided is by by polystyrene (PS) microballoon or two Silica (SiO2) microballoon making array, then after deposited over arrays metal level, then microballoon is removed Fall, leave the metal film with network structure, then metal film is fabricated to metal wire by etching.When When flexible back plate bends, metal wire can be effectively discharged repeatedly using with net metal line The stress discharged during bending, so that increase the life-span of metal wire, by the bending of significant increase flexible back plate Performance, realizes the flexible screen body life-span high.
The present invention can control the density of array arrangement by controlling microballoon concentration, so as to needed for preparing The metal film of the network structure of shape, is further fabricated to metal wire by etching by metal film.
When present invention offer flexible back plate employs above-mentioned flexible conductive wire, when flexible substrate bends, The conductive line resistance of TFT is not in acutely to become big or crack conditions, increased the reliability of device.
Brief description of the drawings
Fig. 1 is the conductive line structure schematic diagram of prior art；
Fig. 2 is micro-sphere array template schematic diagram；
Fig. 3 is the schematic diagram that PS polystyrene microsphere array mould plates prepare flexible conductive wire；
Fig. 4 is the schematic diagram that silicon dioxide microsphere array mould plate prepares flexible conductive wire；
Fig. 5 is bottom gate type TFT structure schematic diagram；
Fig. 6 is top gate type TFT structure schematic diagram；
Reference is expressed as in figure：1- flexible substrates, 2- grid layers, 3- gate insulators, 4- polycrystalline Silicon semiconductor layer, 5- interlayer insulating films, 6- source-drain electrodes layer, 7- active layers, 11- metal levels, 12- microballoons, 13- glass substrates.
Specific embodiment
In order that the object, technical solutions and advantages of the present invention are clearer, below in conjunction with accompanying drawing pair Embodiments of the present invention are described in further detail.
The present invention can be embodied in many different forms, and should not be construed as limited to illustrate herein Embodiment.Conversely, there is provided these embodiments so that the disclosure will be thorough and complete, and Design of the invention will be fully conveyed to those skilled in the art, the present invention only will be come by claim Limit.
Embodiment 1
The preparation method of the flexible conductive wire in the present embodiment, comprises the steps：
S11：Prepare microballoon dispersion liquid
Polystyrene microsphere is added to organic solvent-acetone or directly using in deionized water, is added Surfactant SDS (sodium dodecyl sulfate, sodium salt, SDS), so Microballoon is uniformly distributed in solution by sonic oscillation afterwards and forms microballoon dispersion liquid, the diameter of the microballoon It is 10nm-3um, the concentration of microballoon is 0.15wt% in the microballoon dispersion liquid；
S12：Prepare microsphere template array
Microballoon dispersion is formed into the microsphere template array shown in Fig. 2, glass on glass substrate 13 The microballoon 12 of array arrangement is distributed with glass substrate 13, removal solvent is dried, microsphere template array is obtained； PS microsphere template arrays prepare flexible conductive wire as shown in figure 3, the metal layer thickness for making as needed Select the microballoon 12 of different-diameter.Selection rule is：The radius of PS microballoons is more than making metal level 11 Thickness, can so ensure that the metal for linking together will not be formed during metal level 11 is deposited Line, as shown in Figure 3, forms metal level 11 and the metal level above microballoon 11 between microballoon To disconnect, it is convenient after to remove formed after microballoon there is latticed metal wire.Sunk in the present embodiment The metal level of product 250nm thickness, a diameter of 600nm of the PS microballoons of selection was so being deposited The metal level being deposited in journey above microballoon and the metal level that is deposited between microballoon will not be into being connected to one The metal wire for rising.
S13：Deposited metal line
To aluminum metal layer on microsphere template, filled in the gap between the microsphere surface and microballoon Metal level formed with network structure metal film；
S14, formation flexible conductive wire
In the annealing of dichloromethane solution high temperature, remove microballoon, then carry out vacuum annealing treatment, obtain Metal film with network structure as shown in Figure 4, then the metal film with network structure is etched into The flexible conductive wire of predetermined shape.When flexible conductive wire manufactured in the present embodiment is applied to flexible substrate, When flexible substrate bends, the conductive line resistance of TFT is not in acutely to become big or crack conditions, Increased the reliability of device.
Embodiment 2
The preparation method of the flexible conductive wire in the present embodiment, comprises the steps：
S11：Prepare microballoon dispersion liquid
Silicon dioxide microsphere is added in water or in organic solution, surfactant sodium dodecyl base is added Microballoon is uniformly distributed in solution by sonic oscillation after sodium sulphate and forms microballoon dispersion liquid, the microballoon A diameter of 10nm-2um, in the microballoon dispersion liquid concentration of microballoon be 0.01wt%；
S12：Prepare microsphere template array
Microballoon dispersion is formed into the microsphere template array shown in Fig. 2 on glass substrate 13, The microballoon 12 of array arrangement is distributed with glass substrate 13, removal solvent is dried, microsphere template battle array is obtained Row；Silicon dioxide microsphere array of templates prepares flexible conductive wire as shown in figure 4, making as needed Metal layer thickness selects the silicon dioxide microsphere of different-diameter, and the diameter of microballoon 12 can be golden more than making Belong to the thickness of layer 11, it is also possible to which, less than the thickness for making metal level 11, silica is micro- in such as Fig. 4 A diameter of 150nm of ball, the thickness of metal level is 250nm.
S13：Deposited metal line
To deposited copper metal layer on microsphere template, filled in the gap between the microsphere surface and microballoon Metal level formed with network structure metal film；
S14, formation flexible conductive wire
Vacuum annealing treatment is carried out on the basis of step S13, obtains as shown in Figure 4 with netted knot The metal film of structure, then the metal film with network structure is etched into the flexible conductive wire of predetermined shape.
Used as other embodiment, the metal level of deposition can also be molybdenum or titanium coating, Huo Zhetong, Several combination in aluminium, molybdenum or titanium.When flexible conductive wire manufactured in the present embodiment is applied to flexible substrate, When flexible substrate bends, the conductive line resistance of TFT is not in acutely to become big or crack conditions, Increased the reliability of device.
Application examples 1
As shown in figure 5, a kind of flexible back plate, including flexible substrate 1 and it is formed in flexible substrate 1 Bottom gate type TFT, grid layer 2 that the TFT includes being formed on flexible substrates, gate insulator 3, Polysilicon semiconductor layer 4 and source/drain electrode layer 6, described grid layer 2 and source/drain electrode layer 6 is institute The flexible conductive wire stated.Used as other embodiment, described TFT can also be：Grid layer 2 is adopted The compliant conductive cable architecture prepared with embodiment 1 or embodiment 2, source/drain electrode layer 6 is using common Existing structure；Or the flexible conductive wire that source/drain electrode layer 6 is prepared using embodiment 1 or embodiment 2, Grid layer 2 uses common existing structure.
The gate insulator 3 be selected from, but not limited to, silica, silicon nitride, silicon oxynitride, aluminum oxide, The stacked structure layer of one or more material in titanium oxide, the preferred silicon oxide layer of the present embodiment；This reality The thickness for applying gate insulator 3 described in example isAs other embodiment of the invention, institute Stating the thickness of gate insulator 3 can also beThe purpose of the present invention can be realized, Belong to protection scope of the present invention.
The polysilicon semiconductor layer 4 is easily subject to during the patterning of source/drain electrode layer 6 Damage, therefore, being additionally provided with the covering polysilicon described in the present embodiment on polysilicon semiconductor layer Semiconductor layer 4 is away from the surface of the substrate 1 and the interlayer insulating film 5 of side.The layer insulation Layer be selected from, but not limited to, one kind in silica, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide or The stacked structure layer of multiple material, can realize the purpose of the present invention, belong to protection model of the invention Enclose.The preferred etching barrier layer of interlayer insulating film 5 described in the present embodiment, the etching barrier layer is preferred Silicon oxide layer, thickness is
In thin film transistor (TFT) TFT, the source electrode and drain electrode are generally formed in together using homogeneous raw material In one layer, therefore, describing for convenience, generally layer where the source electrode and the drain electrode is referred to as Source/drain layer 6.Source/drain layer 6 is by the via in interlayer insulating film 5 and polysilicon semiconductor layer 4 Source region and drain region connection.In all accompanying drawings of the invention, the position of the source electrode and the drain electrode can To exchange.
The preparation method of above-mentioned flexible back plate, comprises the steps：
S21, prepare grid layer
Method according to embodiment 1 or embodiment 2 prepares flexible conductive wire as grid layer；
S22, prepare gate insulator, polysilicon semiconductor layer and interlayer insulating film
Gate insulator, polysilicon semiconductor layer and interlayer are deposited on grid layer prepared by step S21 Insulating barrier, and etching interlayer insulating film formation contact hole makes the polysilicon semiconductor layer exposed；
S22, prepare source-drain electrode layer
Method according to embodiment 1 or embodiment 2 etches the contact hole system to be formed in the step S22 Standby flexible conductive wire is used as source-drain electrode.Glass substrate described in embodiment 1 or embodiment 2 is in this step Equivalent to the hole wall of contact hole in rapid.
When flexible substrate manufactured in the present embodiment bends, the conductive line resistance of TFT is not in acutely to become Big or crack conditions, increased the reliability of device.
Application examples 2
As shown in fig. 6, a kind of flexible back plate, including flexible substrate 1 and it is formed in flexible substrate 1 Top gate type TFT, active layer 7 that the TFT includes being formed on flexible substrates, gate insulator 3, Interlayer insulating film 5, grid layer 2 and source/drain electrode layer 6, described grid layer 2 and/or source/drain electrode Layer 6 is described flexible conductive wire.Used as other embodiment, described TFT can also be：Grid The compliant conductive cable architecture that pole layer 2 is prepared using embodiment 1 or embodiment 2, source/drain electrode layer 6 is adopted With common existing structure；Or source/drain electrode layer 6 using embodiment 1 or embodiment 2 prepare it is soft Property conductor wire, grid layer 2 use common existing structure.
The preparation method of above-mentioned flexible back plate, comprises the steps：
S31, prepare active layer and gate insulator
Active layer and gate insulator are deposited on flexible substrates；
S32, prepare grid layer
Flexibility is prepared according to the method described in embodiment 1 or embodiment 2 on the gate insulator to lead Electric wire is used as grid layer；Glass substrate described in embodiment 1 or embodiment 2 in this step should It is gate insulator；
S33, prepare interlayer insulating film
Interlayer insulating film is deposited on the basis of the step S32, and etches the interlayer insulating film and grid Pole insulating barrier forms contact hole makes the active layer exposed
S34, prepare source-drain electrode layer
According to the method described in embodiment 1 or embodiment 2 contact to be formed is etched in the step S33 Hole prepares flexible conductive wire as source-drain electrode.Glass substrate described in embodiment 1 or embodiment 2 exists Equivalent to the hole wall of contact hole in this step.
When flexible substrate manufactured in the present embodiment bends, the conductive line resistance of TFT is not in acutely to become Big or crack conditions, increased the reliability of device.
Obviously, above-described embodiment is only intended to clearly illustrate example, and not to embodiment party The restriction of formula.For those of ordinary skill in the field, may be used also on the basis of the above description To make other changes in different forms.There is no need and unable to give all of implementation method With exhaustion.And the obvious change thus extended out or change guarantor still in the invention Among shield scope.

Claims (10)

1. a kind of preparation method of flexible conductive wire, it is characterised in that comprise the steps：
S11：Prepare microballoon dispersion liquid
Microballoon is added in solvent, is uniformly dispersed and is obtained microballoon dispersion liquid；
S12：Prepare microsphere template array
By microballoon dispersion on substrate, removal solvent is dried, obtain microsphere template array；
S13：Deposited metal line
To deposited metal layer on microsphere template, filled in the gap between the microsphere surface and microballoon Metal level forms the metal film with network structure；
S14, formation flexible conductive wire
After removal substrate and microballoon, then the metal film with network structure is etched into the soft of predetermined shape Property conductor wire.
2. the preparation method of flexible conductive wire according to claim 1, it is characterised in that described The step of S11 be：
Microballoon is added in water or in organic solution, is incited somebody to action by sonic oscillation after adding surfactant Microballoon forms microballoon dispersion liquid in being uniformly distributed solution.
3. the preparation method of flexible conductive wire according to claim 2, it is characterised in that described A diameter of 12nm-3um of microballoon.
4. according to the preparation method of any described flexible conductive wires of claim 1-3, it is characterised in that The concentration of the microballoon is 0.01-0.15wt%, and the microballoon is that polystyrene microsphere or silica are micro- Ball.
5. according to the preparation method of any described flexible conductive wires of claim 1-3, it is characterised in that The step S14 is：
Sonic oscillation or high annealing, remove microballoon in the solution, then carry out vacuum annealing treatment, The metal film with network structure is obtained, then the metal film with network structure is etched into predetermined shape Flexible conductive wire.
6. the preparation method of flexible conductive wire according to claim 5, it is characterised in that the step Metal level in rapid S13 is the one kind in copper, aluminium, molybdenum or titanium or wherein several combinations.
7. the flexibility that a kind of preparation method of any flexible conductive wires of claim 1-6 is prepared Conductor wire.
8. a kind of flexible back plate, including flexible substrate and formation TFT on flexible substrates, its feature It is that the grid layer and/or source/drain electrode layer of the TFT are any described flexibilities of claim 1-6 Conductor wire.
9. a kind of preparation method of flexible back plate, it is characterised in that comprise the steps：
S21, prepare grid layer
Flexible conductive wire is prepared as grid layer according to any described methods of claim 1-6；
S22, prepare gate insulator, polysilicon semiconductor layer and interlayer insulating film
Gate insulator, polysilicon semiconductor layer and interlayer are deposited on grid layer prepared by step S21 Insulating barrier, and etching interlayer insulating film formation contact hole makes the polysilicon semiconductor layer exposed；
S22, prepare source-drain electrode layer
According to any described methods of claim 1-6 the contact hole system to be formed is etched in the step S21 Standby flexible conductive wire is used as source-drain electrode.
10. a kind of preparation method of flexible back plate, it is characterised in that comprise the steps：
S31, prepare active layer and gate insulator
Active layer and gate insulator are deposited on flexible substrates；
S32, prepare grid layer
According to any described methods of claim 1-6 compliant conductive is prepared on the gate insulator Line is used as grid layer；
S33, prepare interlayer insulating film
Interlayer insulating film is deposited on the basis of the step S32, and etches the interlayer insulating film and grid Pole insulating barrier forms contact hole makes the active layer exposed；
S34, prepare source-drain electrode layer
According to any described methods of claim 1-6 the contact hole system to be formed is etched in the step S34 Standby flexible conductive wire is used as source-drain electrode.
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