CN205177844U - Flexible conductor wire and be provided with flexible backplate of said flexible electric conductivity - Google Patents
Flexible conductor wire and be provided with flexible backplate of said flexible electric conductivity Download PDFInfo
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- CN205177844U CN205177844U CN201520984524.9U CN201520984524U CN205177844U CN 205177844 U CN205177844 U CN 205177844U CN 201520984524 U CN201520984524 U CN 201520984524U CN 205177844 U CN205177844 U CN 205177844U
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Abstract
The utility model provides a pair of flexible conductor wire and being provided with the flexible backplate of flexible conductor wire, including the first metal layer and second metal level, be provided with the electrically conductive articulamentum that constitutes by a plurality of metal wires between the first metal layer and the second metal level, the both ends of metal wire respectively with the first metal layer and second metal level electricity are connected. The crooked in -process resistivity of flexible conductor wire can remain stable, prolonged life -span of flexible backplate.
Description
Technical field
The utility model relates to flexible display apparatus field, is specifically related to a kind of flexible conductive wire and is provided with the flexible back plate of described flexible conductive wire.
Background technology
Along with the development of Display Technique, OLED (Organic Light Emitting Diode), because of advantages such as its luminosity are high, rich color, low-voltage direct drive, preparation technology is simple, becomes the focus of international research day by day.OLED field range is wider, can be made into larger sized product, can meet the requirement of user to different size.Above-mentioned outstanding advantage determines OLED will become the main flow of Display Technique of future generation.Along with the development of material technology, display screen can be made into flexible form.The equipment of flexible display screen is adopted to have many good qualities, such as easy to carry, flexible, freely deformable etc.But easily there is huge change and even rupture in the metal wire of flexible back plate inside in the bent state resistance, thus the life-span of impact screen body.
Utility model content
For this reason, easily there is the problem that huge change even ruptures in the metal wire of technical problem to be solved in the utility model existing flexible back plate inside in the bent state resistance, a kind of flexible conductive wire is provided, and is provided with the flexible back plate of this flexible conductive wire.In described flexible conductive wire BENDING PROCESS, resistivity can keep stable, extends the life-span of flexible back plate.
For solving the problems of the technologies described above, the technical solution adopted in the utility model is as follows:
A kind of flexible conductive wire, comprise the first metal layer and the second metal level, be provided with the conductive tie layers be made up of some metal wires between described the first metal layer and the second metal level, the two ends of described metal wire are electrically connected with described the first metal layer and the second metal level respectively.
Gap is provided with between described metal wire.
The angle α of described metal wire and described the first metal layer is acute angle or obtuse angle.
Arranged in parallel between described metal wire.
Metal wire in conductive tie layers is copper metal line, a kind of or wherein several combination in aluminum metal lines, molybdenum line or titanium metal wire.
The thickness of described the first metal layer is 2-5um, and the thickness of described second metal level is 2-5um.
Described the first metal layer and the second metal level identical or different, be respectively Mo layer, copper metal layer, aluminum metal layer or titanium coating.
A kind of flexible back plate, TFT (thin-film transistor) backboard comprising flexible substrate and formed on flexible substrates, described TFT backplate comprises the grid layer, gate insulator, polysilicon semiconductor layer and the source/drain electrode layer that are formed on flexible substrates, and described grid layer and/or source/drain electrode layer are described flexible conductive wire.
A kind of flexible back plate, TFT (thin-film transistor) backboard comprising flexible substrate and formed on flexible substrates, described TFT backplate comprises the active layer, gate insulator, interlayer insulating film, grid layer and the source/drain electrode layer that are formed on flexible substrates, and described grid layer and/or source/drain electrode layer are described flexible conductive wire.
Technique scheme of the present utility model has the following advantages compared to existing technology:
The flexible conductive wire that the utility model provides comprises the first metal layer and the second metal level, be provided with the conductive tie layers be made up of some metal wires between described the first metal layer and the second metal level, the two ends of described metal wire are electrically connected with described the first metal layer and the second metal level respectively.When flexible conductive wire bends, owing to being provided with gap between metal wire, the stress concentration phenomenon produced when can effectively cushion bending, can not cause the resistance of conductor wire to become large; If the situation ruptured in somewhere appears in two metal layers up and down, upper and lower metal can connect by metal wire, and conductor wire resistance can not be caused to become large or fracture.Therefore flexible conductive wire of the present utility model is not when needing to make bending, and by existing metal is made latticed wire laying mode, the bending reliability resistance variations that can promote metal is little, and reliability is high.
The grid layer of the TFT that the utility model provides, source/drain electrode layer have employed above-mentioned compliant conductive line structure, and when flexible substrate bends, the conductor wire resistance of TFT there will not be violent change greatly or crack conditions, adds the reliability of device.
Accompanying drawing explanation
In order to make content of the present utility model be more likely to be clearly understood, below according to specific embodiment of the utility model also by reference to the accompanying drawings, the utility model is described in further detail, wherein
Fig. 1 is the structural representation of the utility model flexible conductive wire;
Fig. 2 is the structural representation of the utility model flexible back plate;
Fig. 3 is another execution mode structural representation of the utility model flexible back plate;
In figure, Reference numeral is expressed as: 1-flexible substrate, 2-grid layer, 3-gate insulator, 4-polysilicon semiconductor layer, 5-passivation layer, 6-source-drain electrode layer, 7-interlayer insulating film, 8-active layer, 11-the first metal layer, 12-conductive particle, 13-second metal level.
Embodiment
For making the purpose of this utility model, technical scheme and advantage clearly, below in conjunction with accompanying drawing, the utility model execution mode is described in further detail.
The utility model can be implemented in many different forms, and should not be understood to be limited to embodiment set forth herein.On the contrary, provide these embodiments, make the disclosure to be thorough and complete, and design of the present utility model fully will be conveyed to those skilled in the art, the utility model will only be limited by claim.In the accompanying drawings, for clarity, the size in layer and region and relative size can be exaggerated.Should be understood that, when element such as layer, region or flexible substrate be referred to as " being formed in " or " being arranged on " another element " on " time, this element can be set directly on another element described, or also can there is intermediary element.On the contrary, when element is referred to as on " being formed directly into " or " being set directly at " another element, there is not intermediary element.
As shown in Figure 1, a kind of flexible conductive wire, comprise the first metal layer 11 and the second metal level 13, be provided with the conductive tie layers be made up of some metal wires 12 between described the first metal layer 11 and the second metal level 13, the two ends of described metal wire 12 are electrically connected with described the first metal layer 11 and the second metal level 12 respectively.Gap is provided with between described metal wire 12.Described metal wire 12 is acute angle or obtuse angle with the angle α of described the first metal layer.Preferably, arranged in parallel between described metal wire 12.
Metal wire 12 in conductive tie layers is copper metal line, a kind of or wherein several combination in aluminum metal lines, molybdenum line or titanium metal wire.
The thickness of described the first metal layer is 2-5um, and the thickness of described second metal level is 2-5um.
Described the first metal layer and the second metal level identical or different, be respectively Mo layer, copper metal layer, aluminum metal layer or titanium coating.
As shown in Figure 2, a kind of flexible back plate, the bottom gate type TFT thin-film transistor comprising flexible substrate 1 and be formed in flexible substrate 1) backboard, described TFT (thin-film transistor) backboard comprises the grid layer 2, gate insulator 3, polysilicon semiconductor layer 4 and the source/drain electrode layer 6 that are formed on flexible substrates, and described grid layer 2 and source/drain electrode layer 6 are described flexible conductive wire.As other execution modes, described TFT backplate also can be for: grid layer 2 adopts the compliant conductive line structure shown in Fig. 1, and source/drain electrode layer 6 adopts common existing structure; Or source/drain electrode layer 6 adopts flexible conductive wire shown in Fig. 1, grid layer 2 adopts common existing structure.
Described gate insulator 3 is selected from but is not limited to the stacked structure layer of one or more materials in silica, silicon nitride, silicon oxynitride, aluminium oxide, titanium oxide, the present embodiment preferential oxidation silicon layer; The thickness of gate insulator 3 described in the present embodiment is
as other embodiments of the present utility model, the thickness of described gate insulator 3 can also be
all can realize the purpose of this utility model, belong to protection range of the present utility model.
Described polysilicon semiconductor layer 4 easily sustains damage in the process of the patterning of source/drain electrode layer 6, for this reason, polysilicon semiconductor layer described in the present embodiment is also provided with the covering surface of described polysilicon semiconductor layer 4 away from described substrate 1 and the passivation layer 5 of side.Described passivation layer is selected from but is not limited to the stacked structure layer of one or more materials in silica, silicon nitride, silicon oxynitride, aluminium oxide, titanium oxide, all can realize the purpose of this utility model, belong to protection range of the present utility model.Passivation layer 5 described in the present embodiment is etching barrier layer preferably, and described etching barrier layer preferential oxidation silicon layer, thickness is
In thin-film transistor TFT backplate, described source electrode and drain electrode adopt homogeneous raw material to be formed within the same layer usually, for convenience of description, usually described source electrode and described drain electrode place layer are referred to as source/drain layer 6.Source/drain layer 6 is connected by the source region of the via hole in passivation layer 5 and polysilicon semiconductor layer 4 and drain region.In the utility model institute drawings attached, the position of described source electrode and described drain electrode can exchange.
TFT (thin-film transistor) backboard, the same prior art of pixel display unit in the preparation technology of above-mentioned flexible back plate, wherein flexible conductive wire preparation method is as follows:
S1, employing magnetically controlled sputter method are at gate insulation layer or interlayer insulating film depositing metal layers;
S2, etching sheet metal reserve the first metal layer and the second metal level, and metal level therebetween adopts etching mode to form some metal wires 12 be parallel to each other, and described metal wire 12 forms conductive tie layers.
Alternatively, flexible back plate as shown in Figure 3, adopt top grid TFT (thin-film transistor) backboard, the top gate type TFT specifically comprising flexible substrate 1 and be formed in flexible substrate 1, described TFT comprises the active layer 8, gate insulator 3, interlayer insulating film 7, grid layer 2 and the source/drain electrode layer 6 that are formed on flexible substrates, and described grid layer 2 and source/drain electrode layer 6 are described flexible conductive wire.As other execution modes, described TFT also can be for: grid layer 2 adopts the compliant conductive line structure shown in Fig. 1, and source/drain electrode layer 6 adopts common existing structure; Or source/drain electrode layer 6 adopts flexible conductive wire shown in Fig. 1, grid layer 2 adopts common existing structure.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.And thus the apparent change of extending out or variation be still among protection range of the present utility model.
Claims (9)
1. a flexible conductive wire, it is characterized in that, comprise the first metal layer and the second metal level, be provided with the conductive tie layers be made up of some metal wires between described the first metal layer and the second metal level, the two ends of described metal wire are electrically connected with described the first metal layer and the second metal level respectively.
2. flexible conductive wire according to claim 1, is characterized in that, is provided with gap between described metal wire.
3. flexible conductive wire according to claim 2, is characterized in that, the angle α of described metal wire and described the first metal layer is acute angle or obtuse angle.
4. flexible conductive wire according to claim 3, is characterized in that, arranged in parallel between described metal wire.
5. flexible conductive wire according to claim 3, is characterized in that, the metal wire in conductive tie layers is copper metal line, a kind of or wherein several combination in aluminum metal lines, molybdenum line or titanium metal wire.
6. flexible conductive wire according to claim 1, is characterized in that, the thickness of described the first metal layer is 2-5um, and the thickness of described second metal level is 2-5um.
7. flexible conductive wire according to claim 1 or 5, is characterized in that, described the first metal layer and the second metal level identical or different, be respectively Mo layer, copper metal layer, aluminum metal layer or titanium coating.
8. a flexible back plate, the TFT backplate comprising flexible substrate and formed on flexible substrates, described TFT backplate comprises the grid layer, gate insulator, polysilicon semiconductor layer and the source/drain electrode layer that are formed on flexible substrates, it is characterized in that, described grid layer and/or source/drain electrode layer are the arbitrary described flexible conductive wire of claim 1-7.
9. a flexible back plate, the TFT backplate comprising flexible substrate and formed on flexible substrates, described TFT backplate comprises the active layer, gate insulator, interlayer insulating film, grid layer and the source/drain electrode layer that are formed on flexible substrates, it is characterized in that, described grid layer and/or source/drain electrode layer are the arbitrary described flexible conductive wire of claim 1-7.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520984524.9U CN205177844U (en) | 2015-12-02 | 2015-12-02 | Flexible conductor wire and be provided with flexible backplate of said flexible electric conductivity |
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| CN201520984524.9U CN205177844U (en) | 2015-12-02 | 2015-12-02 | Flexible conductor wire and be provided with flexible backplate of said flexible electric conductivity |
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| CN205177844U true CN205177844U (en) | 2016-04-20 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105957812A (en) * | 2016-06-06 | 2016-09-21 | 京东方科技集团股份有限公司 | Field effect transistor, manufacturing method thereof, array substrate, manufacturing method thereof, and display panel |
| WO2020077931A1 (en) * | 2018-10-17 | 2020-04-23 | 昆山工研院新型平板显示技术中心有限公司 | Wire, manufacturing method therefor, and array substrate |
-
2015
- 2015-12-02 CN CN201520984524.9U patent/CN205177844U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105957812A (en) * | 2016-06-06 | 2016-09-21 | 京东方科技集团股份有限公司 | Field effect transistor, manufacturing method thereof, array substrate, manufacturing method thereof, and display panel |
| WO2017211176A1 (en) * | 2016-06-06 | 2017-12-14 | 京东方科技集团股份有限公司 | Field-effect transistor and manufacturing method thereof, array substrate and manufacturing method thereof, and display panel |
| CN105957812B (en) * | 2016-06-06 | 2019-02-22 | 京东方科技集团股份有限公司 | Field effect transistor and its manufacturing method, array substrate and its manufacturing method and display panel |
| US10312372B2 (en) | 2016-06-06 | 2019-06-04 | Boe Technology Group Co., Ltd. | Production method of field-effect transistor, production method of array substrate, field-effect transistor, array substrate, and display panel |
| WO2020077931A1 (en) * | 2018-10-17 | 2020-04-23 | 昆山工研院新型平板显示技术中心有限公司 | Wire, manufacturing method therefor, and array substrate |
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