CN112908948A - 一种封装结构及其制造方法 - Google Patents
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Abstract
本发明公开一种封装结构,包括转接板,贴装于转接板上的芯片,以及包覆芯片的第一塑封层,转接板上设置有硅通孔,其第一表面及第二表面分别设置有与硅通孔电连接的外接焊球和/或外接焊盘,且转接板的侧面包括第二塑封层。其中,第二塑封层是在封装结构制造过程中,对转接板进行预切割,并进行二次塑封,包覆预切割形成的切痕形成。
Description
技术领域
本发明涉及半导体技术领域,特别涉及一种封装结构及其制造方法。
背景技术
随着半导体技术的发展,集成电路尺寸持续减小,人们对于集成电路的封装要求越来越高。
随着芯片的厚度的减小,在封装过程中,对于晶圆的研磨量则越来越大,这就使得晶圆自身硬度降低的同时,应力却更大,使得晶圆的翘曲越来越严重。翘曲会给芯片制造带来碎片、划伤等风险,甚至可能导致参数漂移。
因此,有效地控制晶圆翘曲有助于提高封装的可靠性。
发明内容
针对现有技术中的部分或全部问题,本发明一方面提供一种封装结构,包括:
转接板,其第一表面布置有第一重布线层,第二表面布置有外接焊球,以及所述转接板的侧面包括第二塑封层;
芯片,其第二表面包括焊盘,所述焊盘电连接至所述第一重布线层;以及
第一塑封层,其包覆所述芯片,但露出所述芯片的第一表面。
进一步地,所述芯片包括多个相同、同类或不同的芯片。
进一步地,所述芯片与所述第一重布线层之间设置有底层填充料。
本发明另一方面提供所述封装结构的制造方法,包括:
在硅片的第一表面形成硅通孔以及第一重布线层,得到初始转接板;
将芯片贴片至初始转接板的第一表面,所述芯片的焊盘与第一重布线层电连接;
形成第一塑封层;
减薄所述第一塑封层,露出所述芯片的第一表面;
在所述初始转接板的第二表面,形成切痕;
形成第二塑封层,包裹所述切痕;
减薄所述第二塑封层以及初始转接板的第二表面,使得所述硅通孔露头;
在所述初始转接板的第二表面上形成第二重布线层,电连接至所述硅通孔;以及
切割形成单颗封装结构。
进一步地,所述制造方法包括,在所述初始转接板的第二表面,沿着切割道进行切割,形成切痕。
进一步地,所述切痕贯穿所述初始转接板,到达所述第一塑封层。
本发明提供的一种封装结构,其转接板的侧壁具有塑封保护,提高了封装的可靠性。所述转接板侧壁的塑封保护通过切痕以及二次整体塑封形成,所述切痕将转接板分割成单个的单元,以降低转接板整体的刚度,进而降低翘曲,而二次整体塑封包裹住所述切痕,使得封装结构的正反均有塑封保护,平衡了正反面的应力,进一步降低了翘曲,使得可以不使用临时键合即可完成后续的工艺步骤,降低了工艺难度及成本。此外,由于切痕沿切割道形成,且切痕内填充有塑封保护,这能有效避免切割晶圆时芯片崩边。
附图说明
为进一步阐明本发明的各实施例的以上和其它优点和特征,将参考附图来呈现本发明的各实施例的更具体的描述。可以理解,这些附图只描绘本发明的典型实施例,因此将不被认为是对其范围的限制。在附图中,为了清楚明了,相同或相应的部件将用相同或类似的标记表示。
图1示出本发明一个实施例的一种封装结构的结构示意图;
图2示出本发明一个实施例的一种封装结构的制造方法的流程示意图;以及
图3a-3j示出根据本发明一个实施例形成一种封装结构的过程剖面示意图。
具体实施方式
以下的描述中,参考各实施例对本发明进行描述。然而,本领域的技术人员将认识到可在没有一个或多个特定细节的情况下或者与其它替换和/或附加方法、材料或组件一起实施各实施例。在其它情形中,未示出或未详细描述公知的结构、材料或操作以免模糊本发明的发明点。类似地,为了解释的目的,阐述了特定数量、材料和配置,以便提供对本发明的实施例的全面理解。然而,本发明并不限于这些特定细节。此外,应理解附图中示出的各实施例是说明性表示且不一定按正确比例绘制。
在本说明书中,对“一个实施例”或“该实施例”的引用意味着结合该实施例描述的特定特征、结构或特性被包括在本发明的至少一个实施例中。在本说明书各处中出现的短语“在一个实施例中”并不一定全部指代同一实施例。
需要说明的是,本发明的实施例以特定顺序对工艺步骤进行描述,然而这只是为了阐述该具体实施例,而不是限定各步骤的先后顺序。相反,在本发明的不同实施例中,可根据工艺的调节来调整各步骤的先后顺序。
针对现有的封装技术存在工艺过程翘曲较大的问题,本发明通过二次塑封,在转接板边缘形成保护,平衡封装结构正反面的应力,降低翘曲。下面结合实施例附图,对本发明的具体方案做进一步描述。
图2及图3a-3i分别示出根据本发明一个实施例形成一种封装结构的流程图以及过程剖面示意图。如图所示,一种封装结构的制造方法,包括:
首先,在步骤201,如图3a所示,形成初始转接板。所述初始转接板101的形成包括:
在硅片的第一表面形成硅通孔111,所述硅通孔111不穿透所述硅片,与所述硅片101的第二表面保持一定的距离,所述硅通孔111可通过光刻和刻蚀工艺形成;
在所述硅通孔111的表面沉积钝化层或直接热氧化,在本发明的一个实施例中,所述钝化层的材料为氧化硅或氮化硅等;
通过物理溅射、磁控溅射或蒸镀工艺,在所述钝化层上方制作种子层,种子层可采用钛、铜、铝、银、金、钯、铊、锡、镍等金属制作;
在所述硅通孔内电镀填充金属,所述金属可以为铜金属;以及
采用干法刻蚀或湿法腐蚀工艺,去除硅片表面绝缘层,使得填充的金属露头,形成初始转接板;
在本发明的一个实施例中,也可以在所述硅片的第一表面形成第一重布线层112,使其电连接至所述硅通孔111;
接下来,在步骤202,如图3b所示,芯片贴片。将芯片102贴片至初始转接板101的第一表面,使得所述芯片102的焊盘与第一重布线层112或硅通孔111电连接;在本发明的一个实施例中,贴片完成后,在所述芯片102与初始转接板101的间隙内填充底部填充料121;在本发明的一个实施例中,所述芯片可以为为CPU、DSP、GPU、FPGA等逻辑芯片,也可以为DRAM、Flash等存储芯片,还可以为SOC等其他类型芯片或传感器(如MEMS传感器等),一个封装结构上可以包含一个或多个相同、同类或不同的芯片;
接下来,在步骤203,如图3c所示,形成第一塑封层。所述第一塑封层103包覆所述芯片102;在本发明的一个实施例中,所述第一塑封层103的材料可以为树脂材料等;
接下来,在步骤204,如图3d所示,减薄第一塑封层。通过研磨减薄所述第一塑封层103,使得芯片102的第一表面露出;
接下来,在步骤205,如图3e所示,形成切痕。在所述初始转接板101的第二表面形成切痕113,所述切痕113可以沿着切割道进行切割得到,所述切痕113贯穿所述初始转接板101,停留于所述第一塑封层103,使得所述初始转接板101被分割为单个的单元,以降低其整体刚度;
接下来,在步骤206,如图3f所示,形成第二塑封层。所述第二塑封层104包覆所述切痕113,在本发明的一个实施例中,所述第二塑封层104的材料可以为树脂材料等;
接下来,在步骤207,如图3g所示,硅通孔露头。减薄所述第二塑封层104以及初始转接板101的第二表面,使得所述硅通孔111露头;
接下来,在步骤208,如图3h所示,形成第二重布线层。在所述初始转接板101的第二表面形成电镀种子层,具体形成方法可以通过化学镀、PVD等工艺形成,在本发明的一个具体实施例中,可以通过PVD沉积一层200-1000埃的铬和一层500-3000埃的铜形成该电镀种子层,然后在电镀种子层上图形化电镀形成第二重布线层114,使得其与所述硅通孔电连接,具体的图形化电镀方法进一步包括,涂胶、烘干、光刻、显影、电镀、去胶等步骤。在本发明的一个实施例中,还可在所述第二重布线层114的外接焊盘上,通过植球、电镀等工艺形成外接焊球115;以及
最后,在步骤209,如图3i所述,切割形成单颗封装结构001。
最终形成的封装结构001如图1所示,包括:转接板101,芯片102,第一塑封层103以及第二塑封层104。其中,所述芯片102贴装于所述转接板101的第一表面,与所述转接板101上的硅通孔111电连接,在本发明的一个实施例中,所述芯片102与所述转接板101之间还填充有底层填充料121,在本发明的一个实施例中,所述芯片102通过第一重布线层与所述硅通孔111电连接,所述转接板的第二表面包括外接焊球,使得所述封装可以贴装至基板002上,如图3j所示,其中,外接焊球115布置于第二重布线层114的外接焊盘上,所述第二重布线114形成于所述转接板101的第二表面,与所述硅通孔111电连接。所述第一塑封层103包覆所述芯片102,但露出所述芯片102的第一表面。所述第二塑封层104包覆所述转接板的侧面。
本发明提供的一种封装结构,其转接板的侧壁具有塑封保护,提高了封装的可靠性。所述转接板侧壁的塑封保护通过切痕以及二次整体塑封形成,所述切痕将转接板分割成单个的单元,以降低转接板整体的刚度,进而降低翘曲,而二次整体塑封包裹住所述切痕,使得封装结构的正反均有塑封保护,平衡了正反面的应力,进一步降低了翘曲,使得可以不使用临时键合即可完成后续的工艺步骤,降低了工艺难度及成本。此外,由于切痕沿切割道形成,且切痕内填充有塑封保护,这能有效避免切割晶圆时芯片崩边。
尽管上文描述了本发明的各实施例,但是,应该理解,它们只是作为示例来呈现的,而不作为限制。对于相关领域的技术人员显而易见的是,可以对其做出各种组合、变型和改变而不背离本发明的精神和范围。因此,此处所公开的本发明的宽度和范围不应被上述所公开的示例性实施例所限制,而应当仅根据所附权利要求书及其等同替换来定义。
Claims (8)
1.一种封装结构,其特征在于,包括:
转接板,包括硅通孔,所述转接板的第一表面及第二表面分别设置有与所述硅通孔电连接的外接焊球和/或外接焊盘,且所述转接板的侧面包括第二塑封层;
芯片,贴装至所述转接板的第一表面;以及
第一塑封层,其包覆所述芯片,但露出所述芯片的第一表面。
2.如权利要求1所述的封装结构,其特征在于,所述转接板的第二表面包括第二重布线层,其与所述硅通孔电连接,且所述第二重布线层上包括外接焊球。
3.如权利要求1所述的封装结构,其特征在于,所述转接板的第一表面包括第一重布线层,其与所述硅通孔电连接,所述芯片电连接至所述第一重布线层。
4.如权利要求1所述的封装结构,其特征在于,所述芯片包括多个相同、同类或不同的芯片。
5.如权利要求1所述的封装结构,其特征在于,所述芯片与所述转接板之间设置有底层填充料。
6.一种封装结构的制造方法,其特征在于,包括步骤:
在硅片的第一表面形成硅通孔,得到初始转接板;
将芯片贴片至初始转接板的第一表面,所述芯片的焊盘与所述硅通孔电连接;
形成第一塑封层,包覆所述芯片;
减薄所述第一塑封层,露出所述芯片的第一表面;
在所述初始转接板的第二表面,形成切痕;
形成第二塑封层,包裹所述切痕;
减薄所述第二塑封层以及初始转接板的第二表面,使得所述硅通孔露头;
在所述初始转接板的第二表面上形成第二重布线层及外接焊球,电连接至所述硅通孔;以及
切割形成单颗封装结构。
7.如权利要求6所述的制作方法,其特征在于,所述切痕的形成包括:在所述初始转接板的第二表面,沿着切割道进行切割,形成切痕。
8.如权利要求7所述的制作方法,其特征在于,所述切痕贯穿所述初始转接板,到达所述第一塑封层。
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