CN112908930B - 一种改善soi晶圆制造良率的方法 - Google Patents
一种改善soi晶圆制造良率的方法 Download PDFInfo
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- CN112908930B CN112908930B CN202110086178.2A CN202110086178A CN112908930B CN 112908930 B CN112908930 B CN 112908930B CN 202110086178 A CN202110086178 A CN 202110086178A CN 112908930 B CN112908930 B CN 112908930B
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 65
- 229910052710 silicon Inorganic materials 0.000 claims description 65
- 239000010703 silicon Substances 0.000 claims description 65
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 13
- 238000001312 dry etching Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- -1 hydrogen ions Chemical class 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 67
- 238000007254 oxidation reaction Methods 0.000 description 11
- 230000003647 oxidation Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202110086178.2A CN112908930B (zh) | 2021-01-22 | 2021-01-22 | 一种改善soi晶圆制造良率的方法 |
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CN202110086178.2A CN112908930B (zh) | 2021-01-22 | 2021-01-22 | 一种改善soi晶圆制造良率的方法 |
Publications (2)
Publication Number | Publication Date |
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CN112908930A CN112908930A (zh) | 2021-06-04 |
CN112908930B true CN112908930B (zh) | 2023-03-14 |
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CN202110086178.2A Active CN112908930B (zh) | 2021-01-22 | 2021-01-22 | 一种改善soi晶圆制造良率的方法 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101527277A (zh) * | 2009-03-05 | 2009-09-09 | 电子科技大学 | 双面介质槽部分soi材料的制备方法 |
CN104409411A (zh) * | 2014-11-24 | 2015-03-11 | 上海华虹宏力半导体制造有限公司 | 半导体器件及其形成方法 |
JP2015060887A (ja) * | 2013-09-17 | 2015-03-30 | 信越半導体株式会社 | Soiウェーハの製造方法及び貼り合わせsoiウェーハ |
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2021
- 2021-01-22 CN CN202110086178.2A patent/CN112908930B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101527277A (zh) * | 2009-03-05 | 2009-09-09 | 电子科技大学 | 双面介质槽部分soi材料的制备方法 |
JP2015060887A (ja) * | 2013-09-17 | 2015-03-30 | 信越半導体株式会社 | Soiウェーハの製造方法及び貼り合わせsoiウェーハ |
CN104409411A (zh) * | 2014-11-24 | 2015-03-11 | 上海华虹宏力半导体制造有限公司 | 半导体器件及其形成方法 |
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CN112908930A (zh) | 2021-06-04 |
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Effective date of registration: 20220920 Address after: 510000 building a, No. 136, Kaiyuan Avenue, Huangpu Development Zone, Guangzhou, Guangdong Applicant after: Guangdong Dawan District integrated circuit and System Application Research Institute Applicant after: Ruili flat core Microelectronics (Guangzhou) Co.,Ltd. Address before: 510535 building a, 136 Kaiyuan Avenue, Guangzhou Development Zone, Guangdong Province Applicant before: Guangdong Dawan District integrated circuit and System Application Research Institute Applicant before: AoXin integrated circuit technology (Guangdong) Co.,Ltd. |
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