CN112899642A - 一种大沉积区域金刚石薄膜制备用热丝架 - Google Patents
一种大沉积区域金刚石薄膜制备用热丝架 Download PDFInfo
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- CN112899642A CN112899642A CN202110070121.3A CN202110070121A CN112899642A CN 112899642 A CN112899642 A CN 112899642A CN 202110070121 A CN202110070121 A CN 202110070121A CN 112899642 A CN112899642 A CN 112899642A
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- CN
- China
- Prior art keywords
- hot wire
- strip
- electrode
- shaped
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 22
- 239000010432 diamond Substances 0.000 title claims abstract description 22
- 230000008021 deposition Effects 0.000 title claims abstract description 21
- 230000006835 compression Effects 0.000 claims abstract description 27
- 238000007906 compression Methods 0.000 claims abstract description 27
- 230000005484 gravity Effects 0.000 claims abstract description 16
- 230000008093 supporting effect Effects 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000009413 insulation Methods 0.000 claims description 12
- 239000000919 ceramic Substances 0.000 claims description 11
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 230000009471 action Effects 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 239000000110 cooling liquid Substances 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 2
- 238000003763 carbonization Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000004050 hot filament vapor deposition Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 238000005491 wire drawing Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/271—Diamond only using hot filaments
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
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CN202110070121.3A CN112899642B (zh) | 2021-01-19 | 2021-01-19 | 一种大沉积区域金刚石薄膜制备用热丝架 |
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CN202110070121.3A CN112899642B (zh) | 2021-01-19 | 2021-01-19 | 一种大沉积区域金刚石薄膜制备用热丝架 |
Publications (2)
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CN112899642A true CN112899642A (zh) | 2021-06-04 |
CN112899642B CN112899642B (zh) | 2022-08-19 |
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CN202110070121.3A Active CN112899642B (zh) | 2021-01-19 | 2021-01-19 | 一种大沉积区域金刚石薄膜制备用热丝架 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115287633A (zh) * | 2022-08-01 | 2022-11-04 | 隆基绿能科技股份有限公司 | 热丝化学气相沉积设备、硅基薄膜沉积方法及太阳能电池 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007230799A (ja) * | 2006-02-28 | 2007-09-13 | Japan Science & Technology Agency | 気相ダイヤモンド膜のコーティング方法及び装置 |
CN102634770A (zh) * | 2012-05-06 | 2012-08-15 | 北京科技大学 | 一种大面积沉积金刚石膜的热丝架及其制造方法 |
CN203754804U (zh) * | 2014-02-24 | 2014-08-06 | 中科联碳(北京)科技有限公司 | 一种化学气相沉积金刚石设备中使用的热丝张紧机构 |
CN212349912U (zh) * | 2020-06-15 | 2021-01-15 | 河南赞碳科技有限公司 | 一种热丝法制备金刚石涂层模具的布丝装置 |
-
2021
- 2021-01-19 CN CN202110070121.3A patent/CN112899642B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007230799A (ja) * | 2006-02-28 | 2007-09-13 | Japan Science & Technology Agency | 気相ダイヤモンド膜のコーティング方法及び装置 |
CN102634770A (zh) * | 2012-05-06 | 2012-08-15 | 北京科技大学 | 一种大面积沉积金刚石膜的热丝架及其制造方法 |
CN203754804U (zh) * | 2014-02-24 | 2014-08-06 | 中科联碳(北京)科技有限公司 | 一种化学气相沉积金刚石设备中使用的热丝张紧机构 |
CN212349912U (zh) * | 2020-06-15 | 2021-01-15 | 河南赞碳科技有限公司 | 一种热丝法制备金刚石涂层模具的布丝装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115287633A (zh) * | 2022-08-01 | 2022-11-04 | 隆基绿能科技股份有限公司 | 热丝化学气相沉积设备、硅基薄膜沉积方法及太阳能电池 |
CN115287633B (zh) * | 2022-08-01 | 2023-12-01 | 隆基绿能科技股份有限公司 | 热丝化学气相沉积设备、硅基薄膜沉积方法及太阳能电池 |
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Effective date of registration: 20231031 Address after: 344600 Ceramic Industrial Park, Lichuan County, Fuzhou City, Jiangxi Province Patentee after: Jiangxi Xinyuan New Material Technology Co.,Ltd. Patentee after: Sinoma intraocular lens Research Institute (Shandong) Co.,Ltd. Patentee after: Shandong Xinyuan New Material Technology Co.,Ltd. Address before: 250200 crystal building A15, shuangchuang base, 7888 Jingshi East Road, Shuangshan street, Zhangqiu City, Jinan City, Shandong Province Patentee before: Shandong Xinyuan New Material Technology Co.,Ltd. Patentee before: Sinoma intraocular lens Research Institute (Shandong) Co.,Ltd. |