CN112864222A - 半导体功率器件 - Google Patents

半导体功率器件 Download PDF

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CN112864222A
CN112864222A CN201911184108.XA CN201911184108A CN112864222A CN 112864222 A CN112864222 A CN 112864222A CN 201911184108 A CN201911184108 A CN 201911184108A CN 112864222 A CN112864222 A CN 112864222A
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龚轶
毛振东
刘伟
刘磊
袁愿林
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Suzhou Dongwei Semiconductor Co ltd
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Abstract

本发明实施例提供的一种半导体功率器件，包括位于n型漂移区顶部的至少一个p型体区，位于所述p型体区内的第一n型源区和第二n型源区；用于控制所述第一n型源区与所述n型漂移区之间的第一电流沟道的开启和关断的第一栅极结构；用于控制所述第二n型源区与所述n型漂移区之间的第二电流沟道的开启和关断的第二栅极结构，所述第二栅极结构凹陷在所述n型漂移区内。本发明实施例的半导体功率器件芯片尺寸小且具有快的反向恢复速度。

Description

半导体功率器件
技术领域
本发明属于半导体功率器件技术领域，特别是涉及一种芯片尺寸小且反向恢复速度快的半导体功率器件。
背景技术
现有技术的半导体功率器件的等效电路如图1所示，包括源极101、漏极102、栅极103和体二极管104，其中，体二极管104是半导体功率器件中的本征寄生结构。现有技术的半导体功率器件的工作机理是：1)当栅源电压Vgs小于半导体功率器件的阈值电压Vth，漏源电压Vds大于0V时，半导体功率器件处于关断状态；2)当栅源电压Vgs大于半导体功率器件的阈值电压Vth，漏源电压Vds大于0V时，半导体功率器件正向开启，此时电流从漏极经栅极处的电流沟道流到源极。现有技术的半导体功率器件在关断时，当漏源电压Vds小于0V时，半导体功率器件的体二极管处于正偏压状态，反向电流从源极经体二极管流至漏极，此时体二极管的电流存在注入少子载流子现象，而这些少子载流子在半导体功率器件再一次开启时进行反向恢复，导致较大的反向恢复电流，反向恢复时间长。
发明内容
有鉴于此，本发明的目的是提供一种反向恢复速度快的半导体功率器件，以解决现有技术中的半导体功率器件因少子载流子注入问题造成的反向恢复时间长的技术问题。
本发明实施例提供的一种半导体功率器件，包括：
n型漏区，位于所述n型漏区之上的n型漂移区，位于所述n型漂移区顶部的至少一个p型体区，位于所述p型体区内的第一n型源区和第二n型源区；
用于控制所述第一n型源区与所述n型漂移区之间的第一电流沟道的开启和关断的第一栅极结构，所述第一栅极结构包括第一栅介质层、第一栅极和n型浮栅，所述第一栅极和所述n型浮栅位于所述第一栅介质层之上，且在横向上，所述n型浮栅位于靠近所述n型漂移区的一侧，所述第一栅极位于靠近所述第一n型源区的一侧并延伸至所述n型浮栅之上，所述第一栅极通过电容耦合作用于所述n型浮栅；位于所述第一栅介质层中的一个开口，所述n型浮栅通过所述开口与所述p型体区接触形成p-n结二极管；
用于控制所述第二n型源区与所述n型漂移区之间的第二电流沟道的开启和关断的第二栅极结构，所述第二栅极结构包括凹陷在所述n型漂移区内的栅沟槽以及位于所述栅沟槽内的第二栅介质层和第二栅极。
可选的，本发明的半导体功率器件，所述第一栅极覆盖所述n型浮栅靠近所述n型漂移区一侧的侧壁。
可选的，本发明的半导体功率器件，还包括：位于所述栅沟槽中的屏蔽栅，所述第二栅极位于所述栅沟槽的上部，所述屏蔽栅位于所述栅沟槽的下部，所述屏蔽栅通过绝缘介质层与所述第二栅极和所述n型漂移区隔离。
可选的，本发明的半导体功率器件，所述屏蔽栅在所述栅沟槽的下部并向上延伸至所述栅沟槽的上部内。
可选的，本发明的半导体功率器件，所述栅沟槽的上部的宽度大于所述栅沟槽的下部的宽度。
可选的，本发明的半导体功率器件，所述开口位于所述n型浮栅下方且靠近所述n型漂移区的一侧。
本发明实施例提供的一种半导体功率器件，在正向阻断状态和正向开启时具有高阈值电压；在反向导通时，第一电流沟道具有低阈值电压，使得第一电流沟道在低栅电压(或0V电压)下开启，从而能够增加流过第一电流沟道的反向电流，进而能够减少流过半导体功率器件中寄生的体二极管的电流，提高半导体功率器件的反向恢复速度。本发明实施例提供的一种半导体功率器件的第二电流沟道为垂直的电流沟道，可以降低半导体功率器件的芯片尺寸，使得半导体功率器件可以进行更小体积的封装。
附图说明
为了更加清楚地说明本发明示例性实施例的技术方案，下面对描述实施例中所需要用到的附图做一简单介绍。
图1是现有技术的半导体功率器件的等效电路示意图；
图2是本发明提供的一种半导体功率器件的第一个实施例的剖面结构示意图；
图3是本发明提供的一种半导体功率器件的第二个实施例的剖面结构示意图。
具体实施方式
以下将结合本发明实施例中的附图，通过具体实施方式，完整地描述本发明的技术方案。同时，为清楚地说明本发明的具体实施方式，说明书附图中所列示意图，放大了本发明所述的层和区域的尺寸，且所列图形大小并不代表实际尺寸。说明书中所列实施例不应仅限于说明书附图中所示区域的特定形状，而是包括所得到的形状如制备引起的偏差等。
图2是本发明提供的一种半导体功率器件的第一个实施例的剖面结构示意图，如图2所示，本发明实施例提供的一种半导体功率器件包括n型漏区20，位于n型漏区20之上的n型漂移区21，位于n型漂移区21顶部的至少一个p型体区22，图2中仅示例性的示出一个p型体区22。位于p型体区22内的第一n型源区23和第二n型源区33。
用于控制第一n型源区23与n型漂移区23之间的第一电流沟道的开启和关断的第一栅极结构，所述第一栅极结构包括第一栅介质层24、n型浮栅25和第一栅极26，第一栅极26和n型浮栅25位于第一栅介质层24之上，且在横向上，n型浮栅25位于靠近n型漂移区21的一侧，第一栅极26位于靠近第一n型源区23的一侧并延伸至所述n型浮栅25之上，第一栅极26和n型浮栅25由绝缘介质层27隔离，第一栅极26通过电容耦合作用于n型浮栅25。绝缘介质层27通常为二氧化硅。在第一栅介质层24中形成有一个开口28，n型浮栅25通过第一栅介质层24中的开口28与p型体区22接触形成p-n结二极管。
本发明实施例的半导体功率器件的第一栅极26在延伸至n型浮栅25之上的同时还可以覆盖n型浮栅25靠近n型漂移区21的一侧侧壁，这可以增大第一栅极26覆盖n型浮栅25的面积，进而能够增大第一栅极26对n型浮栅26的电容耦合率，该结构在本发明实施例中不再具体展示。
本发明实施例的半导体功率器件，在正向阻断状态时，n型漏区20被施加高电压，由n型浮栅25与p型体区22形成的p-n结二极管被正向偏置，n型浮栅25被充入正电荷，这使得n型浮栅25下面的电流沟道的阈值电压Vht1降低。n型浮栅25的电压与位于第一栅介质层24中的开口28的位置有关，可选的的，位于第一栅介质层24中的开口28位于n型浮栅25下方且靠近n型漂移区21的一侧。即在横向上，开口28的中心到第一栅介质层24的靠近n型漂移区21的一侧端的距离，小于开口28的中心到第一栅介质层24的靠近第一n型源区23的一侧端的距离，亦即，在横向上，开口28位于第一栅介质层24的更靠近n型漂移区21的区域。由此将开口28在第一栅介质层24更靠近n型漂移区21设置，这样可以使n型浮栅25更容易被充入正电荷，从而可以提高n型浮栅25的电压，降低n型浮栅25下方的电流沟道的阈值电压。
本发明实施例的半导体功率器件在正向阻断状态和正向开启状态时，漏源电压Vds大于0V，n型浮栅25下面的电流沟道的阈值电压Vht1对整个第一电流沟道的阈值电压Vth的影响很低，第一电流沟道仍具有高阈值电压Vth。本发明实施例的半导体功率器件在关断时，当源漏电压Vsd大于0V时，n型浮栅25下面的电流沟道的阈值电压Vht1对第一电流沟道的阈值电压Vth的影响很大，使得第一电流沟道具有低阈值电压Vth，从而使第一电流沟道的电流沟道在低栅极电压(或0V电压)下开启，从而能够增加流过第一电流沟道的反向电流，减少流过半导体功率器件中寄生的体二极管的电流，提高半导体功率器件的反向恢复速度。
用于控制第二n型源区33与n型漂移区21之间的第二电流沟道的开启和关断的第二栅极结构，所述第二栅极结构包括凹陷在所述n型漂移区内的栅沟槽以及位于该栅沟槽内的第二栅介质层34和第二栅极36，第二栅极36通过接栅极电压来控制介于第二n型源区33与n型漂移区21之间的第二电流沟道的开启和关断，第二电流沟道为垂直的电流沟道，可以降低半导体功率器件的芯片尺寸，使得半导体功率器件可以进行更小体积的封装。
图3是本发明提供的一种半导体功率器件的第二个实施例的剖面结构示意图，如图3所示，本发明实施例的半导体功率器件中的第二栅极结构还包括位于所述栅沟槽中的屏蔽栅38，此时，第二栅极36位于栅沟槽的上部，屏蔽栅38位于栅沟槽的下部，屏蔽栅38通过绝缘介质层与第二栅极36隔离，在本实施例中，屏蔽栅38通过场氧化层37与n型漂移区21隔离，屏蔽栅38通过栅介质层34与第二栅极36隔离。屏蔽栅38通常接源极电压，用以在栅沟槽底部形成横向电压，提高半导体功率器件的耐压。本发明实施例的半导体功率器件，屏蔽栅38还可以在栅沟槽的下部并向上延伸至栅沟槽的上部内，此时，栅沟槽的上部的宽度可以大于栅沟槽下部的宽度，该结构在本发明实施例中不再详细展示。
以上具体实施方式及实施例是对本发明技术思想的具体支持，不能以此限定本发明的保护范围，凡是按照本发明提出的技术思想，在本技术方案基础上所做的任何等同变化或等效的改动，均仍属于本发明技术方案保护的范围。

Claims (6)

1.一种半导体功率器件，其特征在于，包括：
n型漏区，位于所述n型漏区之上的n型漂移区，位于所述n型漂移区顶部的至少一个p型体区，位于所述p型体区内的第一n型源区和第二n型源区；
用于控制所述第一n型源区与所述n型漂移区之间的第一电流沟道的开启和关断的第一栅极结构，所述第一栅极结构包括第一栅介质层、第一栅极和n型浮栅，所述第一栅极和所述n型浮栅位于所述第一栅介质层之上，且在横向上，所述n型浮栅位于靠近所述n型漂移区的一侧，所述第一栅极位于靠近所述第一n型源区的一侧并延伸至所述n型浮栅之上，所述第一栅极通过电容耦合作用于所述n型浮栅；位于所述第一栅介质层中的一个开口，所述n型浮栅通过所述开口与所述p型体区接触形成p-n结二极管；
用于控制所述第二n型源区与所述n型漂移区之间的第二电流沟道的开启和关断的第二栅极结构，所述第二栅极结构包括凹陷在所述n型漂移区内的栅沟槽以及位于所述栅沟槽内的第二栅介质层和第二栅极。
2.如权利要求1所述的半导体功率器件，其特征在于，所述第一栅极覆盖所述n型浮栅靠近所述n型漂移区一侧的侧壁。
3.如权利要求1所述的半导体功率器件，其特征在于，还包括：位于所述栅沟槽中的屏蔽栅，所述第二栅极位于所述栅沟槽的上部，所述屏蔽栅位于所述栅沟槽的下部，所述屏蔽栅通过绝缘介质层与所述第二栅极和所述n型漂移区隔离。
4.如权利要求3所述的半导体功率器件，其特征在于，所述屏蔽栅在所述栅沟槽的下部并向上延伸至所述栅沟槽的上部内。
5.如权利要求4所述的半导体功率器件，其特征在于，所述栅沟槽的上部的宽度大于所述栅沟槽的下部的宽度。
6.如权利要求1所述的半导体功率器件，其特征在于，所述开口位于所述n型浮栅下方且靠近所述n型漂移区的一侧。
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