CN112853293A - Film coating device - Google Patents

Film coating device Download PDF

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Publication number
CN112853293A
CN112853293A CN202110010669.9A CN202110010669A CN112853293A CN 112853293 A CN112853293 A CN 112853293A CN 202110010669 A CN202110010669 A CN 202110010669A CN 112853293 A CN112853293 A CN 112853293A
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cavity
target
reaction
vacuum
transmission
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Inventor
占勤
杨洪广
窦志昂
连旭东
郭炜
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China Institute of Atomic of Energy
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China Institute of Atomic of Energy
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations

Abstract

The disclosure belongs to the technical field of coating, and particularly relates to a coating device. The device comprises a multi-reaction-cavity system, a transmission-cavity system, a control system, a gas path system, a water cooling system and a glove box; the multi-reaction cavity system comprises more than 2 independent reaction cavity systems, and each reaction cavity system is distributed around the transmission cavity system; sealed transition chambers are arranged between the glove box and the transmission cavity system and between the transmission cavity system and each reaction cavity, and the glove box and the transmission cavity system are communicated and closed through a high-vacuum gate valve. Each reaction cavity system comprises a vacuum cavity, and a target system and a slide holder system which are positioned in the vacuum cavity, and the vacuum degree in each reaction cavity is controlled to be 8 x 10‑5Pa or less. The device has the beneficial effects of multiple reaction cavities, high automation degree, rapid transfer of the substrate, inert gas atmosphere protection and reduction of vacuum damage in the transfer process.

Description

Film coating device
Technical Field
The disclosure belongs to the technical field of coating, and particularly relates to a coating device.
Background
The magnetron sputtering coating equipment realizes rapid film growth by a sputtering method. The device has the characteristics of high sputtering efficiency, good membrane binding force, low substrate temperature rise, convenient operation and control, stable device performance, capability of accurately controlling the thickness of the membrane layer and the like, and is widely applied to many aspects, particularly in the fields of hybrid integrated circuits, optical films, fuel cells and the like.
At present, the large-area magnetron sputtering coating technology has three problems: 1) the uniformity of the film (including film thickness, film composition, etc.) is difficult to control. 2) The repeatability of the thin film production process is difficult to control. 3) The multilayer thin film process technology faces more difficulties, including vacuum technology, substrate transfer technology, low cleanliness of thin film preparation environment, and the like. The prior magnetron sputtering coating equipment disclosed or sold in the market generally has the problems of low automation degree, multiple magnetron sputtering targets in a single reaction cavity, easy pollution among the targets and the like.
Disclosure of Invention
Objects of the invention
According to the problems of the prior art, the present disclosure provides a coating apparatus having multiple reaction chambers, high automation, fast substrate transfer, inert gas atmosphere protection, and reduced vacuum damage during the transfer process.
(II) technical scheme
In order to solve the problems existing in the prior art, the technical scheme provided by the disclosure is as follows:
a film coating device comprises a multi-reaction-cavity system, a transmission-cavity system, a control system, a gas path system, a water cooling system and a glove box; the multi-reaction cavity system comprises more than 2 independent reaction cavity systems, and each reaction cavity system is distributed around the transmission cavity system, so that the substrate can be conveniently transmitted to each reaction cavity system from the transmission cavity system; sealed transition chambers are arranged between the glove box and the transmission cavity system and between the transmission cavity system and each reaction cavity, and the glove box and the transmission cavity system are communicated and closed through a high-vacuum gate valve.
Each reaction cavity system comprises a vacuum cavity, and a target system and a slide holder system which are positioned in the vacuum cavity, and the vacuum degree in each reaction cavity is controlled to be 8 x 10-5Pa or less.
Preferably, the transmission cavity system comprises a columnar transmission cavity body, and an observation cover is arranged above the transmission cavity body; the transmission cavity body is internally provided with a mechanical transmission hand which can rotate freely and can realize the transmission of the substrate to each reaction cavity system.
Preferably, the slide holder system comprises a slide holder which can be heated, rotated and cleaned by radio frequency; the heating temperature of the slide holder is controlled to be 150-350 ℃, and heating is mainly used for removing water vapor on the surface of the substrate, improving the film-substrate bonding force and eliminating the film stress; the rotation rate of the slide holder is 5-30 r/min, and the rotation operation is accurately controlled through a servo motor so as to ensure the uniformity of a coated film; the radio frequency cleaning function is used for cleaning the substrate before film coating.
Preferably, a ferromagnetic target block is arranged in the target system in each reaction cavity system, the substrate is arranged on the slide holder in the slide holder system, and the distance between the target block and the substrate is 50-100 mm.
Preferably, the target block can rotate between-30 and 30 degrees.
Preferably, the position and the angle of the target block can be adjusted through a screw rod arranged outside a vacuum cavity in the reaction cavity system, and the vacuum is not damaged in the adjusting process.
Preferably, the gas path system comprises a vacuum pump, a vacuum gauge, an electromagnetic valve and corresponding pipelines, and provides vacuum for the whole film coating device.
Preferably, the shape of the vacuum cavity of each reaction cavity system is a D-shaped cavity or an O-shaped cavity, so that the vacuum degree at a dead angle in the vacuumizing process is prevented from being not met.
Preferably, the water cooling system is connected with a target system in the reaction cavity system and used for cooling the target block.
Preferably, the number of the multiple reaction cavity systems is two, and the two reaction cavity systems are distributed on two sides of the transmission cavity system at an angle of 90 degrees; wherein two reaction chamber systems are Ni target reaction chamber system and Ti target reaction chamber system respectively, the mechanical transmission hand in the transmission intracavity sets up to the selection of O °, 90 and 180 three positions, can realize rotatory and with the accurate counterpoint of glove box mouth, Ni target reaction chamber cavity and Ti target reaction chamber cavity.
Preferably, an inert gas protective atmosphere is arranged in the glove box, and a sample inlet and a transition pipe are arranged on one side of the glove box; before coating, the substrate to be coated enters a glove box from a sample inlet and a transition pipe and then enters a transmission cavity under the protection of inert atmosphere through a transition cavity between the glove box and a transmission cavity; and after the cavity of the transmission cavity and the reaction cavity system in which the target material to be plated is positioned are vacuumized, the substrate is automatically conveyed to a slide holder in the reaction cavity system by the transmission manipulator for film plating operation.
Preferably, the outer sides of the vacuum cavities are provided with observation windows and access doors.
Preferably, a corrugated pipe capable of placing the Ti target is arranged in the Ti target reaction cavity. The titanium target has high activity, and if the titanium target is contacted with air due to cavity opening operation and the like after film coating, the titanium target can be quickly oxidized, and the titanium target is hidden in the corrugated pipe, so that the influence caused by oxidation can be reduced.
(III) advantageous effects
The multi-reaction-cavity coating device provided by the disclosure can realize that the problem of pollution among target films can not occur when one target film is firstly coated and then another one or more target films are coated on the basis, and the purity and the process reliability of the coating are improved compared with the traditional single-target single-cavity coating device. Even if a certain target film is plated, the problem that a metal with high activity (such as Ti) is easy to oxidize can be solved by using the inert atmosphere protection glove box and the special transmission cavity provided by the present disclosure. The transmission cavity provided by the disclosure is ingenious in design, the mechanical transmission hand capable of being accurately positioned is used for conveying the substrate to the reaction cavity system where the corresponding target block is located from the transmission cavity, and the vacuum can be basically not broken through the transition cavity and under the matching of the gate valve in the conveying process, so that the process efficiency of coating and the activity of the target film are improved.
Drawings
FIG. 1 is a schematic view of the entire coating apparatus. Wherein 1 is a Ni target reaction chamber system; 2 is a Ti target reaction chamber system; 3 is a transmission chamber system; 4 is a glove box; 5 is a glove box station; 6 is a transition tube; 7 is a sample inlet; 8 is a Ni target system; 9 is a Ni target slide stage system; 10 is a Ti target system; 11 is a Ti target stage system; 12 is a first vacuum gauge; 13 is a second vacuum gauge; 14 is a third vacuum gauge; 15 is a first high vacuum gate valve; 16 is a second high vacuum gate valve; 17 is a third high vacuum gate valve; 18 is a mechanical transmission hand.
Detailed Description
The present disclosure will be further described with reference to specific embodiments and drawings attached to the specification.
Example 1
A coating device is shown in figure 1 and comprises two reaction cavity systems, a transmission cavity system 3, a control system, a gas path system, a water cooling system and a glove box 4; the two reaction cavity systems are respectively an Ni target reaction cavity system 1 and a Ti target reaction cavity system 2, the two reaction cavity systems are distributed on two sides of a transmission cavity system 3 at an angle of 90 degrees, and a substrate is respectively transmitted to the reaction cavity systems from the transmission cavity system 3 through a glove box 4. Sealed transition chambers are arranged between the glove box 4 and the transmission cavity system 3 and between the transmission cavity system 3 and each reaction cavity, and the glove box and the transmission cavity system are communicated and closed through a high-vacuum gate valve.
The mechanical transmission hand in the transmission cavity system 3 is set to rotate at three positions of O degrees, 90 degrees and 180 degrees, and can be accurately aligned with the glove box opening, the Ni target reaction cavity 1 and the Ti target reaction cavity 2.
The Ni target reaction cavity system 1 comprises a vacuum cavity, and a Ni target system 8 and a Ni target slide holder system 9 which are positioned in the vacuum cavity; the Ti target reaction cavity system 2 comprises a vacuum cavity, a Ti target system 10 and a Ti target slide holder system 11 which are positioned in the vacuum cavity, and the vacuum degrees in the two reaction cavity are controlled at 6 x 10-5Pa. And observation windows and access doors are arranged on the outer sides of the vacuum cavities.
The Ni target slide holder system 9 and the Ti target slide holder system 11 respectively comprise a slide holder which can be heated, rotated and cleaned by radio frequency; the heating temperature of the slide holder is controlled at 250 ℃, and the heating is mainly used for removing moisture on the surface of the substrate, improving the film-substrate bonding force and eliminating the film stress; the rotation rate of the slide holder is 20r/min, and the rotation operation is accurately controlled by a servo motor so as to ensure the uniformity of the coating film; the radio frequency cleaning function is used for cleaning the substrate before film coating.
The target system in each reaction cavity system is internally provided with a ferromagnetic target block, the substrate is arranged on a slide holder in the slide holder system, and the distance between the target block and the substrate is 80 mm. The angle between the target block and the substrate is adjustable between 0 and 30 degrees. The position and the angle of the target block can be adjusted by a screw rod arranged outside a vacuum cavity in the reaction cavity system, and the vacuum is not damaged in the adjusting process.
The gas path system comprises a vacuum pump, a vacuum gauge, an electromagnetic valve and corresponding pipelines and provides vacuum for the whole film coating device. And the water cooling system is connected with a target system in the reaction cavity system and is used for cooling the target block.
The shape of the vacuum cavity of each reaction cavity system is a D-shaped cavity, so that the vacuum degree at a dead angle in the vacuumizing process is prevented from meeting the requirement.
An inert gas protective atmosphere is arranged in the glove box, and a sample inlet and a transition pipe are arranged on one side of the glove box; before coating, the substrate to be coated enters a glove box from a sample inlet and a transition pipe and then enters a transmission cavity under the protection of inert atmosphere through a transition cavity between the glove box and a transmission cavity; and after the cavity of the transmission cavity and the reaction cavity system in which the target material to be plated is positioned are vacuumized, the substrate is automatically conveyed to a slide holder in the reaction cavity system by the transmission manipulator for film plating operation.
And a corrugated pipe capable of placing a Ti target block is arranged in the Ti target reaction cavity. The titanium target has high activity, and if the titanium target is contacted with air due to cavity opening operation and the like after film coating, the titanium target can be quickly oxidized, and the titanium target is hidden in the corrugated pipe, so that the influence caused by oxidation can be reduced.
A high-purity Ti film with the thickness of 2.5 μm is plated on a Cu substrate by using the plating device provided in example 1, and the operation method and the result are as follows:
firstly, preparation work of a substrate is carried out: two Cu substrates and 1 Si substrate are selected, wherein the Si substrate is used for detecting the thickness and carrying out GD-OES analysis test, and a laser marking machine is used for numbering on one side according to the shape. The method for pretreating the substrate comprises the following steps: cleaning with ethanol as cleaning agent under ultrasonic condition for 5min, cleaning with deionized water, wiping, drying the surface of the substrate, and vacuum packaging. Each substrate was weighed at least 3 times with an electronic balance within ± 0.0005g, respectively, and the average was taken as the substrate reference weight.
The substrate is placed in the Ti target reaction chamber system 2. Before the operation, the device is started according to the specification, then the glove box 4 is opened by rotating an emergency stop button of the glove box 4, the vacuum pump is started, and the upper and lower air pressure limits are set. The substrate and other related tools are then fed into a glove box 4, the substrate is fixed to a jig in the glove box 4, and a high temperature adhesive tape is applied to the substrate whose thickness is to be measured. After the cavity of the transfer chamber is evacuated, the jig is placed on the mechanical transfer hand 18, and the substrate is transferred into the transfer chamber through the glove box 4. And after the vacuum degree in the Ti target reaction cavity body meets the requirement, conveying the substrate into the Ti target reaction cavity body from the transmission cavity.
The substrate is degassed before coating, the embodiment carries out heat preservation and degassing for 2h at 250 ℃, after the substrate degassing is finished, the process parameters are set, and after the process is finished, the device executes the coating process flow.
TABLE 1 Process parameters
Figure BDA0002884929350000051
After the process flow is finished, the sheet taking operation is carried out: and opening a gate valve of the Ti target reaction chamber, transferring the substrate plated with the film to a film support at the end part of a vacuum cylinder of the transmission chamber system by using a mechanical transmission hand from a Ti target film carrying platform, then after the cylinder is contracted, rotating the cylinder by a swing platform to face the glove box 4, opening a gate valve of the glove box 4, controlling the cylinder to extend, and conveying the substrate into the glove box 4. Taking out the substrate in a glove box, and quickly packaging the substrate by vacuum plastic package.
And finally, measuring membrane parameters: (1) and (3) thickness testing: taking the Mo substrate with the steps, carrying out thickness test by a step profiler, selecting different positions of the steps, and obtaining at least 5 groups of results to test the uniformity of the film thickness. (2) Weighing a Ti film: and (3) respectively weighing the Cu substrate for at least 3 times by using an electronic balance, wherein the error is within +/-0.0005 g, and averaging, and subtracting the average value from the weight before film coating to obtain the reference weight of the Ti film. (3) Glow discharge spectrometer (GDOES) analysis: the Ti film on the Mo sheet was analytically tested with a GDOES apparatus.
Table 2 Ti film weighing measurement results
Figure BDA0002884929350000061
It can be seen that with the apparatus provided by the present disclosure, the process parameter conditions are controlled as follows: when the sputtering power is 100W, the sputtering temperature is 250 ℃, and the working pressure is 1Pa, a Ti film with the thickness of 2.5 mu m and a better surface is obtained on the Cu cambered surface substrate material.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes performed by the present specification and drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Example 2
A coating device comprises two reaction cavity systems, a transmission cavity system 3, a control system, a gas path system, a water cooling system and a glove box 4; the two reaction cavity systems are respectively an Ni target reaction cavity system 1 and a Ti target reaction cavity system 2, and the two reaction cavity systems are distributed at two sides of the transmission cavity system 3 at an angle of 90 degrees, so that the substrates can be conveniently transmitted to the reaction cavity systems from the transmission cavity system 3 through the glove box 4. Sealed transition chambers are arranged between the glove box 4 and the transmission cavity system 3 and between the transmission cavity system 3 and each reaction cavity, and the glove box and the transmission cavity system are communicated and closed through a high-vacuum gate valve.
The mechanical transmission hand in the transmission cavity system 3 is set to rotate at three positions of O degrees, 90 degrees and 180 degrees, and can be accurately aligned with the glove box opening, the Ni target reaction cavity 1 and the Ti target reaction cavity 2.
The Ni target reaction cavity system 1 comprises a vacuum cavity, and a Ni target system 8 and a Ni target slide holder system 9 which are positioned in the vacuum cavity; the Ti target reaction cavity system comprises a vacuum cavity, a Ti target system 10 and a Ti target slide holder system 11 which are positioned in the vacuum cavity, and the vacuum degrees in the two reaction cavity are controlled at 6 x 10-5Pa. And observation windows and access doors are arranged on the outer sides of the vacuum cavities.
The Ni target slide holder system 9 and the Ti target slide holder system 11 respectively comprise a slide holder which can be heated, rotated and cleaned by radio frequency; the heating temperature of the slide holder is controlled at 350 ℃, and the heating is mainly used for removing moisture on the surface of the substrate, improving the film-substrate bonding force and eliminating the film stress; the rotation rate of the slide holder is 30r/min, and the rotation operation is accurately controlled by a servo motor so as to ensure the uniformity of the coating; the radio frequency cleaning function is used for cleaning the substrate before film coating.
The target system in each reaction cavity system is internally provided with a ferromagnetic target block, the substrate is arranged on a slide holder in the slide holder system, and the distance between the target block and the substrate is 100 mm. The angle between the target block and the substrate is adjustable between-30 degrees and 30 degrees. The position and the angle of the target block can be adjusted by a screw rod arranged outside a vacuum cavity in the reaction cavity system, and the vacuum is not damaged in the adjusting process.
The gas path system comprises a vacuum pump, a vacuum gauge, an electromagnetic valve and corresponding pipelines and provides vacuum for the whole film coating device. And the water cooling system is connected with a target system in the reaction cavity system and is used for cooling the target block.
The vacuum cavity of each reaction cavity system is in an O-shaped cavity, so that the vacuum degree at a dead angle in the vacuumizing process is prevented from meeting the requirement.
An inert gas protective atmosphere is arranged in the glove box, and a sample inlet and a transition pipe are arranged on one side of the glove box; before coating, the substrate to be coated enters a glove box from a sample inlet and a transition pipe and then enters a transmission cavity under the protection of inert atmosphere through a transition cavity between the glove box and a transmission cavity; and after the cavity of the transmission cavity and the reaction cavity system in which the target material to be plated is positioned are vacuumized, the substrate is automatically conveyed to a slide holder in the reaction cavity system by the transmission manipulator for film plating operation.
And a corrugated pipe capable of placing the Ti target is arranged in the Ti target reaction cavity. The titanium target has high activity, and if the titanium target is contacted with air due to cavity opening operation and the like after film coating, the titanium target can be quickly oxidized, and the titanium target is hidden in the corrugated pipe, so that the influence caused by oxidation can be reduced.
The plating device provided in example 1 was used to plate a high purity Ti film with a thickness of 2.5 μm and a nickel film with a thickness of 2 μm on a Cu substrate, and the operation method and results were as follows:
firstly, preparation work of a substrate is carried out: two Cu substrates and 1 Si substrate are selected, wherein the Si substrate is used for detecting the thickness and carrying out GD-OES analysis test, and a laser marking machine is used for numbering on one side according to the shape. The method for pretreating the substrate comprises the following steps: cleaning with ethanol as cleaning agent under ultrasonic condition for 5min, cleaning with deionized water, wiping, drying the surface of the substrate, and vacuum packaging. Each substrate was weighed at least 3 times with an electronic balance within ± 0.0005g, respectively, and the average was taken as the substrate reference weight.
The substrate is placed in the Ti target reaction chamber system 2. Before the operation, the device is started according to the specification, then the glove box equipment is opened by rotating an emergency stop button of the glove box 4, the vacuum pump is started, and the upper and lower air pressure limits are set. The substrate and other associated tooling are then fed into a glove box where the substrate is secured to a fixture and a high temperature adhesive tape is applied to the substrate for which thickness measurements are to be made. After the cavity of the transmission cavity is vacuumized, the clamp is placed on a mechanical transmission hand, and the substrate is conveyed into the transmission cavity through the glove box. And after the vacuum degree in the Ti target reaction cavity body meets the requirement, conveying the substrate into the Ti target reaction cavity body from the transmission cavity.
The substrate is degassed before coating, the embodiment carries out heat preservation and degassing for 2h at 350 ℃, after the substrate degassing is finished, the process parameters are set, and after the process is finished, the device executes the coating process flow.
TABLE 3 Process parameters set for this experiment
Figure BDA0002884929350000081
After the process flow is finished, the sheet taking operation is carried out: and opening a gate valve of the Ti target reaction chamber, transferring the substrate plated with the film to a film support at the end part of a vacuum cylinder of the transmission chamber system by using a mechanical transmission hand from a Ti target film carrying platform, then after the cylinder is contracted, rotating the cylinder by a swing platform to face the glove box 4, opening a gate valve of the glove box 4, controlling the cylinder to extend, and conveying the substrate into the glove box 4. Taking out the substrate in a glove box, and quickly packaging the substrate by vacuum plastic package.
And finally, measuring membrane parameters: (1) and (3) thickness testing: taking the Mo substrate with the steps, carrying out thickness test by a step profiler, selecting different positions of the steps, and obtaining at least 5 groups of results to test the uniformity of the film thickness. (2) Weighing a Ti film: and (3) respectively weighing the Cu substrate for at least 3 times by using an electronic balance, wherein the error is within +/-0.0005 g, and averaging, and subtracting the average value from the weight before film coating to obtain the reference weight of the Ti film. (3) Glow discharge spectrometer (GDOES) analysis: the Ti film on the Mo sheet was analytically tested with a GDOES apparatus.
It can be seen that with the apparatus provided by the present disclosure, the process parameter conditions are controlled as follows: when the sputtering power is 100W, the sputtering temperature is 350 ℃, and the working pressure is 1Pa, a Ti film with the thickness of 2.5 mu m and a relatively good surface is obtained on the Cu cambered surface substrate material.
After the Ti film is plated, the Ti plated substrate is taken out by a mechanical transmission hand and is transmitted into the Ni target reaction cavity body through a transition cavity between the transmission cavity system and the Ni target reaction cavity system 1, and the plating of the nickel film with the thickness of 2 mu m is completed.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes performed by the present specification and drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Example 3
A coating device comprises a multi-reaction-cavity system, a transmission-cavity system 3, a control system, a gas path system, a water cooling system and a glove box 4; the multi-reaction cavity system comprises 4 independent reaction cavity systems, and each reaction cavity system is distributed around the transmission cavity system 3, so that the substrate is conveniently transmitted to each reaction cavity system from the transmission cavity system 3; sealed transition chambers are arranged between the glove box 4 and the transmission cavity system 3 and between the transmission cavity system 3 and each reaction cavity, and the glove box and the transmission cavity system are communicated and closed through a high-vacuum gate valve.
Each reaction cavity system comprises a vacuum cavity, and a target system and a slide holder system which are positioned in the vacuum cavity, and the vacuum degree in each reaction cavity is controlled to be 8 x 10-5Pa or less.
The transmission cavity system 3 comprises a columnar transmission cavity body, and an observation cover is arranged above the transmission cavity body; the transfer chamber cavity is provided with a freely rotatable mechanical transfer hand 18, and the mechanical transfer hand 18 can realize the transfer of the substrate to each reaction chamber system.
The slide holder system comprises a slide holder which can be heated, rotated and cleaned by radio frequency; the heating temperature of the slide holder is controlled to be 150-350 ℃, and the heating is mainly used for removing moisture on the surface of the substrate, improving the film-substrate bonding force and eliminating the film stress; the rotation rate of the slide holder is 5-30 r/min, and the rotation operation is accurately controlled through a servo motor so as to ensure the uniformity of a coated film; the radio frequency cleaning function is used for cleaning the substrate before film coating.
The target system in each reaction cavity system is internally provided with a ferromagnetic target block, the substrate is arranged on a slide holder in the slide holder system, and the distance between the target block and the substrate is 50-100 mm. The target block can rotate between-30 and 30 degrees. The position and the angle of the target block can be adjusted by a screw rod arranged outside a vacuum cavity in the reaction cavity system, and the vacuum is not damaged in the adjusting process.
The gas path system comprises a vacuum pump, a vacuum gauge, an electromagnetic valve and corresponding pipelines and provides vacuum for the whole film coating device. And the water cooling system is connected with a target system in the reaction cavity system and is used for cooling the target block.
An inert gas protective atmosphere is arranged in the glove box, and a sample inlet and a transition pipe are arranged on one side of the glove box; before coating, the substrate to be coated enters a glove box from a sample inlet and a transition pipe and then enters a transmission cavity under the protection of inert atmosphere through a transition cavity between the glove box and a transmission cavity; and after the cavity of the transmission cavity and the reaction cavity system in which the target material to be plated is positioned are vacuumized, the substrate is automatically conveyed to a slide holder in the reaction cavity system by the transmission manipulator for film plating operation. And opening a gate valve between the reaction cavity system and the transmission cavity system after the film coating operation, taking out the substrate by the transmission manipulator, conveying the substrate into a transition cavity of the glove box and the transmission cavity, and taking out the substrate by the glove box under the protection of inert atmosphere.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes performed by the present specification and drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.

Claims (12)

1. A film coating device is characterized by comprising a multi-reaction-cavity system, a transmission-cavity system, a control system, a gas path system, a water cooling system and a glove box; the multi-reaction cavity system comprises more than 2 independent reaction cavity systems, and each reaction cavity system is distributed around the transmission cavity system; sealed transition chambers are arranged between the glove box and the transmission cavity system and between the transmission cavity system and each reaction cavity, and the glove box and the transmission cavity system are communicated and closed through a high-vacuum gate valve;
each reaction cavity system comprises a vacuum cavity, and a target system and a slide holder system which are positioned in the vacuum cavity, and the vacuum degree in each reaction cavity is controlled to be 8 x 10-5Pa or less.
2. The plating device according to claim 1, wherein the transfer chamber system comprises a columnar transfer chamber body above which an observation cover is provided; the transmission cavity body is internally provided with a mechanical transmission hand which can rotate freely and can realize the transmission of the substrate to each reaction cavity system.
3. The plating device according to claim 1, wherein the stage system comprises a stage that is heatable, rotatable, and radio frequency-washable; the heating temperature of the slide holder is controlled to be 150-350 ℃; the rotation rate of the slide holder is 5 to 30 r/min.
4. The coating device according to claim 1, wherein a ferromagnetic target block is provided in the target system in each reaction chamber system, the substrate is placed on a stage in the stage system, and the target block is spaced from the substrate by 50 to 100 mm.
5. The plating device according to claim 4, wherein the target is rotatable between-30 and 30 °.
6. The plating device according to claim 4 or 5, wherein the position and angle of the target block are adjustable by a lead screw provided outside the vacuum chamber in the reaction chamber system.
7. The plating device according to claim 1, wherein the vacuum chamber of each reaction chamber system is shaped as a "D" chamber or an "O" chamber.
8. The plating device according to claim 1, wherein the water cooling system is connected to a target system in the reaction chamber system for cooling the target mass.
9. The plating device according to claim 1, wherein the number of the multiple reaction chamber systems is two, and the two reaction chamber systems are distributed at 90 ° on both sides of the transfer chamber system; wherein two reaction chamber systems are Ni target reaction chamber system and Ti target reaction chamber system respectively, the mechanical transmission hand in the transmission intracavity sets up to the selection of O °, 90 and 180 three positions, can realize rotatory and with the accurate counterpoint of glove box mouth, Ni target reaction chamber cavity and Ti target reaction chamber cavity.
10. The plating device according to claim 1, wherein an inert gas atmosphere is provided in the glove box, and a sample inlet and a transition tube are provided at one side of the glove box.
11. The plating device according to claim 1, wherein an observation window and an access door are provided outside the vacuum chamber.
12. The plating device according to claim 9, wherein a bellows for holding a Ti target mass is provided in the Ti target reaction chamber.
CN202110010669.9A 2021-01-06 2021-01-06 Film coating device Pending CN112853293A (en)

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TW200715448A (en) * 2005-07-25 2007-04-16 Canon Anelva Corp Vacuum processing apparatus, semiconductor device manufacturing method and semiconductor device manufacturing system
CN101988190A (en) * 2010-05-25 2011-03-23 东莞宏威数码机械有限公司 Pretreatment device and pretreatment method for film-coating substrate
CN103403215A (en) * 2010-12-28 2013-11-20 佳能安内华股份有限公司 Manufacturing apparatus
CN210367891U (en) * 2019-07-29 2020-04-21 深圳市溢鑫科技研发有限公司 Cluster formula filming equipment

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200715448A (en) * 2005-07-25 2007-04-16 Canon Anelva Corp Vacuum processing apparatus, semiconductor device manufacturing method and semiconductor device manufacturing system
US20080171435A1 (en) * 2005-07-25 2008-07-17 Canon Anelva Corporation Vacuum Processing Apparatus, Method for Manufacturing Semiconductor Device, and System For Manufacturing Semiconductor Device
CN101988190A (en) * 2010-05-25 2011-03-23 东莞宏威数码机械有限公司 Pretreatment device and pretreatment method for film-coating substrate
CN103403215A (en) * 2010-12-28 2013-11-20 佳能安内华股份有限公司 Manufacturing apparatus
CN210367891U (en) * 2019-07-29 2020-04-21 深圳市溢鑫科技研发有限公司 Cluster formula filming equipment

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