CN112839761A

CN112839761A - Cutting tool

Info

Publication number: CN112839761A
Application number: CN201980067838.3A
Authority: CN
Inventors: 奥野晋; 今村晋也; 小野聪; 阿侬萨克·帕索斯
Original assignee: Sumitomo Electric Hardmetal Corp
Current assignee: Sumitomo Electric Hardmetal Corp
Priority date: 2018-10-15
Filing date: 2019-07-05
Publication date: 2021-05-25
Anticipated expiration: 2039-07-05
Also published as: KR20210045498A; KR102495052B1; US11167355B2; WO2020079894A1; CN112839761B; US20210008633A1

Abstract

A cutting tool comprising: a base material having a rake face, and a coating film covering the rake face, wherein the coating film comprises α -Al provided on the base material₂O₃Layer of alpha-Al₂O₃The layer comprises alpha-Al₂O₃Grains, alpha-Al on the rake face₂O₃In the layer, the area ratio of crystal grains having (001) orientation is 50% to 90%% alpha-Al based on rake face₂O₃2 theta-sin determined by interplanar spacing of the (001) plane of the layer and by using X-rays²Film residual stress A obtained by measuring residual stress by psi method_AMore than 0MPa and 2000MPa or less, and based on the alpha-Al of the rake face₂O₃Film residual stress B determined by interplanar spacing of the (110) face of the layer_AIs-1000 MPa or more and less than 0 MPa.

Description

Cutting tool

Technical Field

The present disclosure relates to a cutting tool. The present application claims priority based on japanese patent application No. 2018-.

Background

Generally, a cutting tool in which a base material is coated with a coating film is used. For example, Japanese patent laid-open No.2004-284003 (patent document 1) discloses a surface-coated cutting tool having a cutting insert comprising α -Al₂O₃A coating film of a layer, wherein the alpha-Al is present in₂O₃When viewed in a plan view in the normal direction of the surface of the layer, the total area of crystal grains exhibiting the crystal orientation of the (0001) plane is 70% or more.

Further, japanese patent laid-open No.2009-028894 (patent document 2) discloses a coated cutting tool having a cemented carbide body and a coating layer in which at least the outermost layer of the coating layer is α -Al₂O₃Layer of the alpha-Al₂O₃The layer has a thickness of 7 to 12 μm and is oriented in the (006) direction, an orientation coefficient TC (006) thereof is greater than 2 and less than 6, the orientation coefficients TC (012), TC (110), TC (113), TC (202), TC (024), and TC (116) are each less than 1, and the orientation coefficient TC (104) is the second largest orientation coefficient.

Reference list

Patent document

Patent document 1: japanese patent laid-open No.2004-284003

Patent document 2: japanese patent laid-open No.2009-028894

Disclosure of Invention

A cutting tool according to the present disclosure is a cutting tool including: a substrate comprising a rake surface; and a coating film for coating the rake face, wherein

The coating film comprises alpha-Al disposed on the base material₂O₃A layer of a material selected from the group consisting of,

α-Al₂O₃the layer comprises alpha-Al₂O₃The crystal grains of (a) are,

alpha-Al at rake face₂O₃In the layer, the area ratio of crystal grains oriented along (001) in the crystal grains is 50% to 90%, and

in the 2 theta-sin according to the use of X-rays²In the residual stress measurement by the ψ method,

based on alpha-Al at the rake face₂O₃Film residual stress A determined by interplanar spacing of the (001) plane of the layer_AGreater than 0MPa and not more than 2000MPa, and

based on alpha-Al at the rake face₂O₃Film residual stress B determined by interplanar spacing of the (110) face of the layer_AIs-1000 MPa or more and less than 0 MPa.

Drawings

Fig. 1 is a perspective view showing one embodiment of a base material of a cutting tool.

FIG. 2 shows α -Al₂O₃Examples of color patterns in the finished side of a layer.

FIG. 3 shows the reaction at alpha-Al₂O₃Schematic cross-sectional view of a region in the thickness direction of the layer.

FIG. 4 is a schematic representation of a-Al₂O₃A graph of stress distribution in the thickness direction of the layer.

Fig. 5 is a schematic cross-sectional view showing an example of a chemical vapor deposition apparatus for producing a coating film.

Fig. 6 is a schematic sectional view of a cutting tool according to the present embodiment.

Detailed Description

[ problem to be solved by the present disclosure ]

In

patent documents

1 and 2, α -Al having the above-described structure is included₂O₃The coating of the layer, therefore, improves the mechanical properties of the surface-coated cutting tool, such as wear resistance (e.g., crater wear resistance, etc.) and breakage resistance, with the result that the life of the intended cutting tool is longer.

However, in recent years, cutting has been performed at higher speed and higher efficiency. This results in an increase in the load applied to the cutting tool, with the result that the life of the cutting tool tends to be shortened. Therefore, further improvement in mechanical properties of the coating film of the cutting tool is required.

The present disclosure is made in view of the above circumstances, and an object of the present disclosure is to provide a cutting tool excellent in chipping resistance and crater wear resistance.

[ advantageous effects of the present disclosure ]

According to the present disclosure, a cutting tool excellent in chipping resistance and crater wear resistance can be provided.

[ description of the embodiments ]

First, embodiments of the present disclosure are enumerated and described.

[1] The cutting tool according to the present disclosure is a cutting tool including: a substrate comprising a rake surface; and a coating film for coating the rake face, wherein

α-Al₂O₃the layer comprises alpha-Al₂O₃The crystal grains of (a) are,

Since the cutting tool is configured as described above, the cutting tool can have excellent chipping resistance and excellent crater wear resistance. Here, the term "chipping resistance" refers to a property of suppressing only breakage or peeling of the surface layer of the coating film.

[2]α-Al₂O₃The thickness of the layer is 1 μm to 20 μm,

in the region r1 between the imaginary plane D1 and the imaginary plane D2, the imaginary plane D1 is located away from α — Al in the measurement of the residual stress by the constant penetration depth method using X-rays₂O₃The surface of the layer opposite to the substrate faces the substrate side by a distance d₁₀A distance d₁₀Is alpha-Al₂O₃10% of the thickness of the layer, the imaginary plane D2 being located at a distance alpha-Al₂O₃The surface of the layer opposite to the substrate faces the substrate side by a distance d₄₀A distance d₄₀Is alpha-Al₂O₃40% of the thickness of the layer,

based on alpha-Al at the rake face₂O₃A residual stress A determined by the interplanar spacing of the (001) plane of the layer is-200 MPa or more and 2000MPa or less, and

based on alpha-Al at the rake face₂O₃A residual stress B determined by the interplanar spacing of the (110) plane of the layer is-1500 MPa to 700MPa, and

satisfies the relation of A > B. By being defined in this way, a cutting tool having more excellent chipping resistance can be provided.

[3] The stress distribution of the residual stress A has

Residual stress A from alpha-Al₂O₃The surface of the layer opposite to the substrate continuously decreases toward the substrate side in the 1a region,and

a 2a region which is located on the substrate side with respect to the 1a region and in which the residual stress A continuously increases from the surface opposite to the substrate toward the substrate side, and

the 1 a-th and 2 a-th regions are continuous with each other through the minimum point of the residual stress a. By being defined in this way, a cutting tool having more excellent crater wear resistance can be provided.

[4] The stress distribution of the residual stress B has

Residual stress B from alpha-Al₂O₃A 1b region in which the surface of the layer opposite to the substrate continuously decreases toward the substrate side, an

A 2B region which is located on the substrate side with respect to the 1B region and in which the residual stress B continuously increases from the surface opposite to the substrate toward the substrate side, and

the 1B-th and 2B-th regions are continuous with each other through the minimum point of the residual stress B. By being defined in this way, a cutting tool having more excellent crater wear resistance can be provided.

[5]The coating film also comprises a coating layer arranged on the base material and alpha-Al₂O₃One or more intermediate layers between the layers, and

the intermediate layers each contain a compound composed of at least one element selected from the group consisting of group 4 elements, group 5 elements, group 6 elements, Al and Si in the periodic table and at least one element selected from the group consisting of C, N, B and O. By being defined in this way, a cutting tool having more excellent chipping resistance and crater wear resistance can be provided.

[ details of embodiments of the present disclosure ]

One embodiment of the present disclosure (hereinafter referred to as "the present embodiment") is described below. However, the present embodiment is not limited thereto. In the present specification, the expression "X to Y" represents a range from a lower limit to an upper limit (i.e., X to Y). When the unit of X is not specified but only the unit of Y is specified, the unit of X is the same as the unit of Y. Further, in the present specification, when a compound (for example, "TiC") is represented by a chemical formula without defining a composition ratio of constituent elements ") When used, the chemical formula is considered to include all conventionally known composition ratios (element ratios). In this case, the above chemical formula is considered to include not only stoichiometric compositions but also non-stoichiometric compositions. For example, the chemical formula "TiC" includes not only the stoichiometric composition "Ti₁C₁", but also includes non-stoichiometric compositions such as" Ti₁C_0.8". This also applies to compounds other than "TiC".

< cutting tool >)

The cutting tool according to the present disclosure is a cutting tool including: a substrate comprising a rake surface; and a coating film for coating the rake face, wherein

α-Al₂O₃the layer comprises alpha-Al₂O₃The crystal grains of (a) are,

The surface-coated cutting tool of the present embodiment (hereinafter, also simply referred to as "cutting tool") includes a base material having a rake face and a coating film that coats the rake face. In another aspect of this embodiment, the coating can coat portions of the substrate other than the rake face (e.g., the flank face). Examples of such cutting tools include drills, end mills, replaceable cutting inserts for drills, replaceable cutting inserts for end mills, replaceable cutting inserts for milling, replaceable cutting inserts for turning, metal saws, gear cutting tools, reamers, taps, and the like.

< substrate >

For the substrate of the present embodiment, any conventionally known substrate for this purpose may be used. For example, the substrate preferably includes at least one selected from the group consisting of: cemented carbides (e.g., tungsten carbide (WC) -based cemented carbides, cemented carbides containing Co in addition to WC, or cemented carbides to which carbonitrides of Cr, Ti, Ta, Nb, and the like are added in addition to WC); cermets (containing TiC, TiN, TiCN, etc. as main components); high-speed steel; ceramics (titanium carbide, silicon nitride, aluminum oxide, etc.); a cubic boron nitride sintered body (cBN sintered body); and a diamond sintered body. More preferably, the base material includes at least one selected from the group consisting of cemented carbide, cermet, and cBN sintered body.

Among these various types of base materials, WC-based cemented carbide or cBN sintered body is particularly preferably selected. This is due to the following reasons: each of these base materials is excellent in the balance between hardness and strength particularly at high temperatures, and has excellent characteristics as a base material for a cutting tool for the purpose of the above-mentioned use.

When cemented carbide is used as the base material, the effects of the present embodiment can be achieved even when free carbon or an abnormal phase called η phase is included in the structure of the cemented carbide. It should be noted that the substrate used in the present embodiment may have a modified surface. For example, in the case of cemented carbide, a de-beta layer may be formed on the surface. In the case of the cBN sintered body, a surface hardened layer may be formed. Even when such modification is performed on the surface, the effect of the present embodiment is exhibited.

Fig. 1 is a perspective view showing one embodiment of a base material of a cutting tool. For example, a base material having such a shape is used as a base material of a replaceable cutting insert for turning. The base material 10 has a rake face 1, a flank face 2, and a cutting edge ridge portion 3 where the rake face 1 and the flank face 2 intersect with each other. That is, the rake face 1 and the flank face 2 are surfaces connected to each other with the cutting edge ridge line portion 3 interposed therebetween. The cutting edge ridge portion 3 constitutes a cutting edge tip portion of the substrate 10. The shape of the substrate 10 may be regarded as the shape of the cutting tool.

When the cutting tool is a replaceable cutting insert, it may comprise a substrate 10 with a chip breaker or a substrate 10 without a chip breaker. The shape of the cutting edge line portion 3 includes any one of the following shapes: sharp edges (edges where the rake and relief surfaces meet each other), honing edges (machining sharp edges into rounded corners), negative margins (beveling), and a combination of honing and negative margins.

In the above description, the shape of the base material 10 and the names of its respective parts are described with reference to fig. 1. In the cutting tool according to the present embodiment, the same terms as those described above are used for names corresponding to the shape and portions of the base material 10. That is, the cutting tool 50 includes a rake face 1, a flank face 2, and a cutting edge ridge line portion 3 (see fig. 6) connecting the rake face 1 and the flank face 2 to each other.

< coating film >

The coating film 40 according to the present embodiment includes α -Al provided on the base material 10₂O₃Layer 20 (see fig. 6). The "coating film" has a function of improving various characteristics of the cutting tool such as chipping resistance and wear resistance by coating at least a part of the rake face (for example, a part that comes into contact with a workpiece during cutting). The coating is not limited to coating a portion of the rake face, and preferably coats the entire surface of the rake face. The coating may cover the entire surface of the substrate. However, a coating film that does not cover a part of the rake face and a coating film having a partially different composition do not depart from the scope of the present embodiment.

The thickness of the coating is preferably 3 μm to 50 μm, and more preferably 5 μm to 25 μm. Herein, the thickness of the cover film refers to the sum of the thicknesses of the respective layers included in the cover film. Examples of the "layer included in the coating film" include α -Al described below₂O₃Layers, intermediate layers, lower bottom layers, outermost layers, and the like. For example, the thickness of the coating film can be determined as follows: scanning Transmission Electron Microscopy (STEM) was used to measure the thickness at ten arbitrary points in a cross-sectional sample parallel to the normal direction of the surface of the substrate and determineThe average of the measured thicknesses at these ten points. This also applies to α -Al which will be described later₂O₃Measurement of the thickness of each of the layer, the intermediate layer, the lower base layer and the outermost layer. Examples of scanning transmission electron microscopes include JEM-2100F (trade name) supplied by JEOL.

(α-Al₂O₃Layer)

alpha-Al of the present embodiment₂O₃The layer comprises alpha-Al₂O₃Crystal grains (alumina having an α -type crystal structure) (hereinafter, also simply referred to as "crystal grains"). I.e., alpha-Al₂O₃The layer being of polycrystalline alpha-Al₂O₃Of (2) a layer of (a).

alpha-Al can be directly arranged on the substrate₂O₃The layer, or the α -Al layer may be provided on the substrate via another layer such as an intermediate layer described below₂O₃The layer may be formed as long as the effects exerted by the cutting tool according to the present embodiment are not impaired. In the presence of alpha-Al₂O₃On the layer, other layers, such as an outermost layer, may be provided. Further, alpha-Al₂O₃The layer may be the outermost layer (outermost surface layer) of the coating film.

α-Al₂O₃The layers have the following characteristics. I.e. alpha-Al at the rake face₂O₃In the layer, the area ratio of crystal grains oriented in (001) direction in the crystal grains is 50% to 90%. In another aspect of the present embodiment, the area ratio of crystal grains other than the crystal grains oriented in (001) at the rake face is 10% or more and 50% or less. Further, the sum of the area ratio of the crystal grains oriented in (001) and the area ratio of the crystal grains other than the crystal grains oriented in (001) is 100%.

In yet another aspect of this embodiment, the mirror-polished α -Al is prepared when the mirror-polished α -Al is subjected to a field emission type scanning electron microscope₂O₃When the processed surface of the layer is subjected to electron backscatter diffraction image analysis and a color chart is created based on the crystal orientation of each crystal grain determined by the electron backscatter diffraction image analysis, the area ratio of the crystal grain in the (001) orientation in the color chart may be 50% to 90%. alpha-Al₂O₃The machined surface of the layer is parallel to the surface at the rake face of the substrate.

Due to alpha-Al at the rake face₂O₃In the layer, alpha-Al in (001) orientation₂O₃The area ratio of crystal grains is 50% to 90%, and therefore alpha-Al₂O₃Since the layer has a specific orientation ((001) orientation), the cutting tool of the present embodiment can sufficiently obtain the effect of improving the strength of the coating film. Further, when the entire surface of the base material is coated with the coating film, in the cutting tool of the present embodiment, α — Al at the surface of the base material other than the rake face₂O₃The area ratio of the crystal grains in the (001) orientation in the layer may be 50% or more and 90% or less, or the value of the area ratio thereof may fall outside the range of 50% or more and 90% or less.

As used herein, "α -Al oriented in (001)₂O₃The crystal grains "or" crystal grains oriented in (001) "refer to each α -Al having an inclination angle of the (001) plane (an angle formed between the normal of the surface of the substrate (the surface facing the coating film) and the normal of the (001) plane) of 0 ° to 20 ° with respect to the normal of the surface of the substrate₂O₃And (4) crystal grains. alpha-Al can be confirmed using a field emission scanning electron microscope (FE-SEM) equipped with an electron back-scattered diffraction device (EBSD device)₂O₃Any alpha-Al in the crystal layer₂O₃Whether the crystal grains are oriented in (001) direction. Electron backscatter diffraction image analysis (EBSD image analysis) is an analytical method based on the automated analysis of the chrysanthemic pool diffraction patterns produced by backscattered electrons. Further, "except for α -Al oriented in (001)₂O₃The phrase "crystal grains other than crystal grains" or "crystal grains other than those oriented in (001)" means each α -Al having an inclination angle of the (001) plane of more than 20 ° with respect to the normal line of the substrate surface₂O₃And (4) crystal grains.

For example, FE-SEM equipped with EBSD device was used to photograph mirror polished alpha-Al parallel to the substrate surface at the rake face₂O₃Image of the machined side of the layer. Next, the normal direction of the (001) plane and the normal direction of the substrate surface (i.e., parallel to α -Al) at each pixel of the captured image are calculated₂O₃The direction of the line of the processing surface in the thickness direction of the layer). Then, each pixel in which the angle is 0 ° to 20 ° is selected. Each pixel is selected to correspond to alpha-Al in which the (001) plane is inclined at an angle of 0 DEG to 20 DEG with respect to the surface of the substrate₂O₃Grains, i.e. alpha-Al corresponding to the "in (001) orientation₂O₃Grains ".

By the reaction of alpha-Al₂O₃Selected pixels of the processing side of the layer provide colors for classification to produce a color map as a crystal orientation map, and alpha-Al is calculated based on the color map₂O₃alpha-Al oriented in (001) direction of a predetermined region (i.e., color pattern) of the processed surface of the layer₂O₃Area ratio of crystal grains. In the crystal orientation mapping, a predetermined color is provided to the selected pixel. Therefore, by using the supplied color as an index, α -Al in the (001) orientation in the predetermined region can be calculated₂O₃Area ratio of crystal grains. For example, the calculation of the forming angle, the selection of each pixel having an angle of 0 to 20, and the calculation of the area ratio can be performed using commercially available software (trade name: "Orientation Imaging Microcopy Ver 6.2", supplied by EDAX).

FIG. 2 shows α -Al₂O₃An example of a color pattern of the above-described finished surface of the layer 20. In fig. 2, crystal grains 21 in (001) orientation are represented by the area surrounded by the solid line and indicated by the left oblique hatching, and crystal grains 22 other than the crystal grains in (001) orientation are represented by the area surrounded by the solid line and indicated by the white color. That is, in the color chart shown in fig. 2, the crystal grains are indicated by left diagonal hatching, and the normal direction of the (001) plane is directed to α -Al in each crystal grain₂O₃The angle of the normal direction of the surface of the layer 20 is 0 ° to 20 °. White represents crystal grains in which the normal direction of the (001) plane is opposite to that of α -Al₂O₃The angle of the normal direction of the surface of the layer 20 is greater than 20 °.

In the present embodiment, α -Al is specified from the crystal orientation map (color chart)₂O₃The working surface of the layer comprises the portion in which the rim (001) is located) Oriented alpha-Al₂O₃The area ratio of the crystal grains is 50% to 90%. alpha-Al in (001) orientation₂O₃The area ratio of the crystal grains is preferably 50% or more and 90% or less, and more preferably 55% or more and 85% or less.

It should be noted that in order to calculate the α -Al in the (001) orientation₂O₃The observation magnification of FE-SEM was set at 5000 times as the area ratio of crystal grains. Further, the observation area was set to 450 μm²(30. mu. m.times.15 μm). The number of measurement regions is set to 3 or more.

α-Al₂O₃The thickness of the layer is preferably 1 μm or more and 20 μm or less, and more preferably 4 μm or more and 15 μm or less.

(α-Al₂O₃Residual stress of layer)

(2θ-sin²Residual stress of film measured by psi method

alpha-Al in the present embodiment₂O₃In the layer, in the 2 theta-sin according to the use of X-rays²In the residual stress measurement by the ψ method,

Here, "residual stress" refers to an internal stress (intrinsic strain) in the layer. The residual stress is roughly classified into compressive residual stress and tensile residual stress. The compressive residual stress means a residual stress (expressed in units of "MPa" in the present specification) represented by a numerical value having a negative sign "-" (negative). For example, it is understood that "compressive residual stress of 100 MPa" is a residual stress of-100 MPa. Therefore, the concept "large compressive residual stress" means that the absolute value of the above numerical value is large, and the concept "small compressive residual stress" means that the absolute value of the above numerical value is small. The tensile residual stress means a residual stress (expressed in units of "MPa" in the present specification) represented by a numerical value having a positive sign "+" (positive). For example, "tensile residual stress of 100 MPa" means a residual stress of 100 MPa. Therefore, the concept "large tensile residual stress" means that the above numerical value is large, and the concept "small tensile residual stress" means that the numerical value is small.

In the present embodiment, the expression "film residual stress a determined based on the interplanar spacing of the (001) plane at the rake face_A"means a residual stress reflecting the entire predetermined measurement visual field at the rake face, and is calculated based on the interplanar spacing of the (001) plane of the entire predetermined measurement visual field. According to 2 theta-sin using X-rays²The residual stress is measured by the psi method to calculate the film residual stress A_A. The specific method is as follows. First, for all measurement fields, the 2 θ -sin is used²The interplanar spacing of the (001) plane was measured by the ψ method. Here, the diffraction angle in the measurement process means a diffraction angle corresponding to a crystal plane to be measured. The above-mentioned measurement visual field means "alpha-Al₂O₃Measurement field at the surface of the layer ". Next, based on the measured interplanar spacings of the (001) plane, the residual stress of all the measurement fields was calculated. This measurement was performed for a plurality of measurement fields, and the average value of the respective residual stresses calculated in the measurement fields was regarded as "film residual stress a_A”。

When the area ratio of crystal grains oriented in (001) is 50% or more, it is considered that the film residual stress a_AMainly due to the residual stress that the grains in (001) orientation have. For this reason, the present inventors considered that the film residual stress a could be reduced_AThe residual stress of the crystal grains oriented in (001) direction is considered.

In the present embodiment, the following conditions were used in accordance with 2 theta-sin²The psi method measures the residual stress.

The device comprises the following steps: SmartLab (supplied by Rigaku)

X-ray: Cu/Kalpha/45 kV/200mA

A counter: D/teX Ultra250 (supplied by Rigaku)

Scanning range: residual stress A in the film_AIn the case of (1), 89.9 DEG to 91.4 DEG (tilt method) in the film residual stress B_AIn the case ofFrom 37.0 DEG to 38.4 DEG (tilt method)

In the present embodiment, the expression "film residual stress B determined based on the interplanar spacing of the (110) plane at the rake face_A"means a residual stress reflecting the entire predetermined measurement field at the rake face, and is calculated based on the interplanar spacing of the (110) plane in the entire predetermined measurement field. According to 2 theta-sin using X-rays²The residual stress was measured by the psi method to calculate the film residual stress B_A. The specific method is as follows. First, for all measurement fields, the 2 θ -sin is used²The interplanar spacing of the (110) plane was measured by the ψ method. Here, the above-mentioned visual field of measurement means "α -Al₂O₃Measurement field at the surface of the layer ". Next, the residual stress of all measurement fields was calculated based on the measured interplanar spacings of the (110) plane. This measurement is performed in a plurality of measurement fields, and the average value of the respective residual stresses calculated in the measurement fields is regarded as "film residual stress B_A”。

And film residual stress A_AIn contrast, film residual stress B_ATend to exhibit higher compressive residual stress values. For this reason, the present inventors considered that the film residual stress A was caused_AIn contrast, film residual stress B_AAnd is further contributed by residual stress possessed by crystal grains other than those in the (001) orientation.

(α-Al₂O₃Residual stress in depth direction of layer

(residual stress obtained by constant penetration depth method)

Preferably, in the present embodiment, at the region r1 between the imaginary plane D1 and the imaginary plane D2, the imaginary plane D1 is located away from α — Al in the measurement of residual stress according to the constant penetration depth method using X-rays₂O₃The surface of the layer opposite to the substrate faces the substrate side by a distance d₁₀A distance d₁₀Is alpha-Al₂O₃10% of the thickness of the layer, the imaginary plane D2 being located at a distance alpha-Al₂O₃The surface of the layer opposite to the substrate faces the substrate side by a distance d₄₀A distance d₄₀Is alpha-Al₂O₃40% of the thickness of the layer,

based on alpha-Al on the rake face₂O₃A residual stress A determined by the interplanar spacing of the (001) plane of the layer is-200 MPa or more and 2000MPa or less, and

based on alpha-Al on the rake face₂O₃A residual stress B determined by the interplanar spacing of the (110) plane of the layer is-1500 MPa to 700MPa, and

satisfies the relation of A > B (for example, FIG. 3).

Preferably, in another aspect of this embodiment, α -Al₂O₃The thickness of the layer is 1 μm to 20 μm,

satisfies the relation of A > B.

In the present embodiment, the expression "residual stress a determined based on the interplanar spacing of the (001) plane at the rake face" refers to the residual stress at a predetermined depth position of the rake face, which is calculated based on the interplanar spacing of the (001) plane. The residual stress a was calculated according to the constant penetration depth method using X-rays. The specific method is as follows. First, for all measurement fields, a predetermined depth position is measured by a constant penetration depth methodInterplanar spacing of the (001) plane of the site. Here, the measurement visual field means "parallel to α -Al₂O₃The measurement field of view at an imaginary plane at the surface of the layer and passing through the predetermined depth position ". Next, based on the measured interplanar spacings of the (001) plane, the residual stress of all the measurement fields was calculated. Such measurement is performed in a plurality of measurement fields, and the average value of the respective residual stresses calculated in the measurement fields is regarded as "residual stress a".

In the present embodiment, the residual stress was measured according to the constant penetration depth method under the following conditions.

The device comprises the following steps: spring-8 BL16XU

X-ray energy: 10keV (λ 0.124nm)

X-ray beam diameter: 0.4mm to 1.8mm (varying according to depth of penetration)

Diffraction surface used: (001) plane in the case of residual stress A and (110) plane in the case of residual stress B

In the present embodiment, the expression "residual stress B determined based on the interplanar spacing of the (110) plane at the rake face" refers to a residual stress at a predetermined depth position of the rake face, which is calculated based on the interplanar spacing of the (110) plane. The residual stress B was calculated according to the constant penetration depth method using X-rays.

By determining alpha-Al according to a constant penetration depth method using X-rays₂O₃Predetermined distance d in the layer₁₀And a predetermined distance d₄₀Residual stress A (A) at the depth position of (2)_d10And A_d40) And B (B)_d10And B_d40) It is possible to determine whether or not the residual stress a and the residual stress B at the region r1 fall within the respective predetermined numerical ranges. Specifically, (1) first, the residual stress a in a specific measurement field of view of the virtual plane D1 is measured by the constant penetration depth method_d10And residual stress B_d10. (2) Next, the residual stress A in the visual field of the imaginary plane D2 is measured by the constant penetration depth method_d40And residual stress B_d40A field of view located directly below the specific measurement field of view of the virtual plane D1 and located in the same direction as the specific measurement field of viewIn the same area. (3) When the residual stress A is measured_d10And A_d40And residual stress B_d10And B_d40Fall within the respective numerical ranges mentioned above and satisfy A_d10＞B_d10And A is_d40＞B_d40Then, it is determined that "the residual stress a and the residual stress B at the region r1 fall within the respective numerical ranges and satisfy the relationship of a > B".

(α-Al₂O₃Residual stress distribution of layers)

Preferably, in the alpha-Al according to the present embodiment₂O₃In the layer 20, the stress distribution of the residual stress A has

The residual stress A is from alpha-Al₂O₃A 1a region in which the surface of the layer opposite to the substrate continuously decreases toward the substrate side, an

the 1 a-th and 2 a-th regions are continuous with each other through the minimum point of the residual stress a.

An exemplary stress profile is shown in fig. 4. In the graph of fig. 4, the vertical axis represents residual stress, and the horizontal axis represents α -Al₂O₃The position in the thickness direction of the layer 20. For the vertical axis, negative values are indicated at α -Al₂O₃Compressive residual stress is present in layer 20, positive values being indicated at alpha-Al₂O₃Tensile residual stress is present in layer 20 and a value of 0 is indicated at α -Al₂O₃There is no stress in layer 20.

Referring to FIG. 4, for example, in α -Al₂O₃The stress distribution of the residual stress a in the thickness direction of the layer 20 (curve a of fig. 4) includes: a 1 a-th region P1a in which the value of residual stress decreases continuously from the upper surface side (surface side or surface side opposite to the substrate) toward the lower surface side (substrate side); and a2 a-th region P2a which is located on the lower surface side with respect to the 1 a-th region and in which the value of residual stress continuously increases from the upper surface side toward the lower surface side. Here, the 2 nd region has a point where the residual stress changes from compressive residual stress to tensile residual stress. The 1a region and the 2a region are preferably continuous with each other through a minimum point P3a, where the residual stress value at the minimum point P3a is minimal. The minimum point P3a is located near the upper surface relative to the lower surface.

Due to alpha-Al₂O₃The layer 20 has the stress distribution described above, so in interrupted cutting, α -Al₂O₃The layer 20 is more excellent in the balance between crater wear resistance and chipping resistance. This is due to the following reasons: between the upper surface side and the minimum point P3a, the secondary alpha-Al is sufficiently absorbed₂O₃The upper surface side of layer 20 is applied to alpha-Al₂O₃The impact of layer 20 and exhibits high resistance to crack progression on the lower surface side relative to minimum point P3 a.

In the stress distribution of the residual stress a, the value of the residual stress is preferably-1000 MPa to 2000 MPa. In other words, in the stress distribution of the residual stress a, the absolute value of the compressive residual stress is preferably 1000MPa or less (i.e., -1000MPa or more and less than 0MPa), and the absolute value of the tensile residual stress is preferably 2000MPa or less (i.e., greater than 0MPa and 2000MPa or less). In this case, both chipping resistance and crater wear resistance tend to be exhibited appropriately.

Further, the minimum point P3a is preferably located at a distance of α -Al from the surface (upper surface) opposite to the base material₂O₃At a location of 0.1% to 40% of the thickness of the layer 20. In this case, α -Al₂O₃The damage form of the layer 20 is stable, so that sudden chipping of the coating film, for example, is suppressed, whereby variations in tool life can be reduced. For example, when alpha-Al₂O₃When the thickness of the layer 20 is 1 μm to 20 μm, the position of the minimum point P3a is preferably 0.1 μm to 8 μm from the surface opposite to the substrate. Further, the value of the residual stress at the minimum point P3a is preferably-300 MPa to 900MPa, more preferably-200 MPa to 850MPa, and further preferably-100 MPa to 750 MPa.

Preferably, in the present embodiment, the stress distribution of the residual stress B has

Residual stress B from alpha-Al₂O₃Surface of the layer opposite to the substrateA 1b region whose surface continuously decreases toward the substrate side, an

the 1B-th and 2B-th regions are continuous with each other through the minimum point of the residual stress B.

In the stress distribution of the residual stress B (curve B of fig. 4), the value of the residual stress is preferably-2000 MPa to 1000 MPa. In other words, in the stress distribution of the residual stress B, the absolute value of the compressive residual stress is preferably 2000MPa or less (i.e., -2000MPa or more and less than 0MPa), and the absolute value of the tensile residual stress is preferably 1000MPa or less (i.e., more than 0MPa and 1000MPa or less). In this case, both chipping resistance and crater wear resistance tend to be exhibited appropriately.

Further, the minimum point P3b is preferably located at a distance of α -Al from the surface (upper surface) opposite to the base material₂O₃At a location of 0.1% to 40% of the thickness of the layer 20. In this case, α -Al₂O₃The damage form of the layer 20 is stable, so that sudden chipping of the coating film, for example, is suppressed, whereby variations in tool life can be reduced. For example, when alpha-Al₂O₃When the thickness of the layer 20 is 1 μm to 20 μm, the position of the minimum point P3b is preferably 0.1 μm to 8 μm from the surface opposite to the substrate. Further, the value of the residual stress at the minimum point P3b is preferably-1900 MPa to-100 MPa, more preferably-1800 MPa to-200 MPa, and further preferably-1700 MPa to-300 MPa.

(α-Al₂O₃Average particle diameter of crystal grains of (2)

In the present embodiment, α -Al₂O₃The average particle diameter of the crystal grains of (2) is preferably 0.1 to 3 μm, and more preferably 0.2 to 2 μm. For example, the average grain size of the crystal grains can be calculated using the above color chart. Specifically, first, in the above-described color chart, regions having the same color (i.e., the same plane orientation) and surrounded by different colors (i.e., different plane orientations) are regarded as separate regions of each crystal grain. Next, two points on the outer periphery of each die are measuredAnd the longest distance between two points thereon is taken as the grain size of the crystal grains.

(intermediate layer)

The coating film preferably further comprises a coating layer formed on the base material and alpha-Al₂O₃More than one intermediate layer between the layers. Preferably, the intermediate layers each contain a compound composed of at least one element selected from the group consisting of group 4 elements, group 5 elements, group 6 elements, Al and Si in the periodic table and at least one element selected from the group consisting of C, N, B and O. Examples of the group 4 element in the periodic table include titanium (Ti), zirconium (Zr), hafnium (Hf), and the like. Examples of the group 5 element in the periodic table include vanadium (V), niobium (Nb), tantalum (Ta), and the like. Examples of the group 6 element in the periodic table include chromium (Cr), molybdenum (Mo), tungsten (W), and the like. The intermediate layer more preferably contains a Ti compound composed of a Ti element and at least one element selected from the group consisting of C, N, B and O.

Examples of the compound contained in the intermediate layer include TiCNO, TiAlN, TiAlSiN, TiCrSiN, TiAlCrSiN, AlCrSiN, AlCrN, AlCrO, AlCrSiN, TiZrN, TiAlMoN, TiAlNbN, TiSiN, AlCrTaN, AlTiVN, TiB₂TiCrHfN, CrSiWN, TiAlTiCN, TiSiCN, AlZrON, AlCrCN, AlHfN, CrSiBON, TiAlWN, AlCrMoCN, TiAlBN, TiAlCrSiBCNO, ZrN, ZrCN, etc.

The thickness of the intermediate layer is preferably 0.1 μm or more and 3 μm or less, and more preferably 0.5 μm or more and 1.5 μm or less.

(other layer)

The coating film may further include other layers as long as the effects exerted by the cutting tool of the present embodiment are not impaired. The other layer may have a composition similar to that of alpha-Al₂O₃The composition of the layers or intermediate layers may be different or the same. Examples of the compound contained in the other layer include TiN, TiCN, TiBN, Al₂O₃And the like. It should be noted that the stacking order of these layers is not particularly limited. Examples of other layers include: is arranged on the base material and alpha-Al₂O₃A lower bottom layer between the layers; is arranged at alpha-Al₂O₃An outermost layer on the layer; and so on. The respective thicknesses of the other layers are not particularly limited as long as they do not impairThe effect of the present embodiment is sufficient. For example, the thickness of each of the other layers is 0.1 μm or more and 20 μm or less.

< method for producing cutting tool >)

The method of manufacturing a cutting tool according to the present embodiment includes:

a step of preparing a base material having a rake face (hereinafter, also referred to as "first step");

forming a layer including alpha-Al on a rake surface of a substrate using a chemical vapor deposition method₂O₃A step of coating a layer (hereinafter, also referred to as "second step"); and

for alpha-Al at the rake face₂O₃A step of subjecting the layer to shot blasting (hereinafter, also referred to as "third step").

< first step: step of preparing the substrate >

In the first step, a substrate having a rake face is prepared. For example, a cemented carbide substrate is prepared as the substrate. As the cemented carbide substrate, a commercially available cemented carbide substrate may be used, or a cemented carbide substrate may be produced by a general powder metallurgy method. In the production using a general powder metallurgy method, for example, WC powder and Co powder are mixed using a ball mill or the like to obtain a powder mixture. The powder mixture is dried and then formed into a predetermined shape, thereby obtaining a formed body. Further, the formed body was sintered to obtain a WC — Co cemented carbide (sintered body). Next, the sintered body is subjected to predetermined cutting edge processing such as honing, thereby producing a base material composed of a WC — Co-based cemented carbide. In the first step, any conventionally known such substrate other than the above-mentioned substrate may be prepared.

< second step: step of Forming coating film >

In the second step, a chemical vapor deposition method (CVD method) is used to form a coating film including alpha-Al on the rake face of the base material₂O₃And (3) coating the layer.

Fig. 5 is a schematic sectional view showing an exemplary chemical vapor deposition apparatus (CVD method) for manufacturing a coating film. Hereinafter, the second step will be described with reference to fig. 5.The CVD apparatus 30 includes: a plurality of substrate setting jigs 31 for holding the substrate 10; and a reaction vessel 32 made of heat-resistant alloy steel and covering the substrate setting jig 31. A temperature control device 33 for controlling the temperature in the reaction vessel 32 is provided around the reaction vessel 32. The reaction vessel 32 is provided with a gas introduction pipe 35 having a gas introduction port 34. In the inner space of the reaction vessel 32 provided with the substrate setting jig 31, a gas introduction pipe 35 is provided to extend in the vertical direction and to be rotatable with respect to the vertical direction, and the gas introduction pipe 35 is provided with a plurality of injection holes 36 for injecting gas into the reaction vessel 32. By using this CVD apparatus 30, the film including α -Al can be formed as follows₂O₃Each layer of the coating of the layer.

First, each substrate 10 is placed on the substrate setting jig 31, and while controlling the temperature and pressure in the reaction vessel 32 to fall within predetermined ranges, α -Al is introduced from the gas introduction pipe 35 into the reaction vessel 32₂O₃The layer 20 is a source gas. Thus, α -Al is formed on the rake face of the base material 10₂O₃Layer 20. Herein, alpha-Al is formed₂O₃Before the layer 20, it is preferable to form an intermediate layer on the surface of the substrate 10 by introducing a raw material gas for an intermediate layer into the reaction vessel 32 from the gas introduction pipe 35. The formation of α -Al after the formation of the intermediate layer on the surface of the substrate 10 will be described below₂O₃Method of layer 20.

Although there is no particular limitation on the source gas for the intermediate layer, examples of the source gas for the intermediate layer include: TiCl (titanium dioxide)₄And N₂The mixed gas of (3); TiCl (titanium dioxide)₄、N₂And CH₃Mixed gas of CN; and TiCl₄、N₂CO and CH₄The mixed gas of (1).

In the process of forming the intermediate layer, the temperature inside the reaction vessel 32 is preferably controlled so as to fall within the range of 1000 ℃ to 1100 ℃, and the pressure inside the reaction vessel 32 is preferably controlled so as to fall within the range of 0.1hPa to 1013 hPa. Further, HCl gas may be introduced together with the raw material gas. The introduction of HCl gas allows the thickness uniformity of each layerAnd (4) improving. It should be noted that H is preferably used₂As a carrier gas. Further, when the gas is introduced, it is preferable to rotate the gas introduction pipe 35 by a driving unit not shown in the drawing. Therefore, the respective gases can be uniformly distributed in the reaction vessel 32.

Further, the intermediate layer can be formed using an MT (intermediate temperature) -CVD method. Unlike the CVD method (hereinafter, also referred to as "HT-CVD") performed at a temperature of 1000 ℃ to 1100 ℃, the MT-CVD method is a method of forming a layer by maintaining the temperature in the reaction vessel 32 at a relatively low temperature of 850 ℃ to 950 ℃. Since MT-CVD is performed at a lower temperature than the HT-CVD method, damage to the substrate 10 due to heating can be reduced. In particular, when the intermediate layer is a TiCN layer, the intermediate layer is preferably formed by an MT-CVD method.

Next, α -Al is formed on the intermediate layer₂O₃Layer 20. AlCl was used as the raw material gas₃、N₂、CO₂And H₂And S mixed gas. At this time, CO is introduced₂And H₂The respective flow rates (L/min) of S are set to satisfy CO₂/H₂S is more than or equal to 2. Thus, alpha-Al is formed₂O₃And (3) a layer. It should be noted that for CO₂/H₂The upper limit of S is not particularly limited, but is preferably 5 or less in consideration of the uniformity of the thickness of the layer. Furthermore, the present inventors have confirmed that CO₂And H₂The flow rates of S are preferably 0.4L/min to 2.0L/min and 0.1L/min to 0.8L/min, respectively, and most preferably 1L/min and 0.5L/min.

The temperature in the reaction vessel 32 is preferably controlled so as to fall within the range of 1000 ℃ to 1100 ℃, and the pressure in the reaction vessel 32 is preferably controlled so as to fall within the range of 0.1hPa to 100 hPa. Further, HCl gas may be introduced together with the above raw material gas, and H₂Can be used as carrier gas. It should be noted that when gas is introduced, it is preferable to rotate the gas introduction pipe 35 as in the foregoing case.

In order to further enhance the effect of the present disclosure, it is preferable to form α -Al₂O₃The final stage of the layer is continuously decreased at a rate of 0.1 deg.C/min to 0.3 deg.C/min (hereinafter, also referred to as "cooling rate")/minThe temperature in the low reaction vessel is maintained for a period of 30 minutes or more and less than 90 minutes (hereinafter, also referred to as "temperature lowering time"), preferably 30 minutes or more and 80 minutes or less. In this way, the tensile residual stress generated in the coating film becomes small, with the result that in the subsequent step of performing the shot peening, the tensile stress can be reduced, and the compressive stress can be introduced more efficiently.

It should be noted that the concentration may be in alpha-Al₂O₃The outermost layer is formed on the layer 20 as long as the effects exerted by the cutting tool according to the present embodiment are not impaired. The method for forming the outermost layer is not particularly limited. Examples thereof include a method of forming an outermost layer using a CVD method or the like.

In the above manufacturing method, the composition of each layer is changed by controlling the conditions of the CVD method. For example, the composition of each layer is determined by the composition of the raw material gas introduced into the reaction vessel 32, and the thickness of each layer is controlled by the execution time (film formation time). In particular, to reduce alpha-Al₂O₃The ratio of coarse particles in the layer 20, and increasing the crystal grains oriented along the (001) plane, it is important to control CO in the raw material gas₂Gas and H₂Flow ratio of S gas (CO)₂/H₂S)。

< third step: step of carrying out shot peening

In the step of performing shot blasting, α -Al at the rake face is treated₂O₃The layer is shot-blasted. "shot peening" refers to a process of changing various properties of a surface such as orientation and compressive stress by causing a large amount of small spheres (media) such as steel or nonferrous metal (e.g., ceramic) to collide (project) with the surface such as a rake face at high speed. In the present embodiment, the shot peening of the rake face is performed to impart α -Al on the rake face₂O₃The layer provides residual stress, thereby causing film residual stress A_AAnd film residual stress B_AThere is a difference between them. As a result, α -Al is suppressed₂O₃Cracks in the layer progress, and excellent chipping resistance is achieved. The projection of the medium is not particularly limited as long as α -Al₂O₃In the layerFilm residual stress A of_AAnd film residual stress B_AFalling within the respective predetermined numerical ranges described above. Can be directly connected with alpha-Al₂O₃The projection of the medium is carried out on a layer, or may be on alpha-Al₂O₃The projection of the medium is performed on other layers (e.g., outermost layers) disposed on the layer. The projection of the medium is not particularly limited as long as the projection of the medium is performed at least on the rake face. For example, the projection of the medium may be performed over the entire surface of the cutting tool.

Generally, the shot peening is performed so as to change tensile stress mainly remaining in the target layer of the coating film into compressive stress. However, it has not been generally known that shot peening is performed to cause film residual stress (film residual stress a) of crystal grains oriented in (001)_A) And film residual stress of crystal grains other than the crystal grains oriented in (001) (film residual stress B_A) Tensile residual stress and compressive residual stress falling within predetermined numerical ranges are respectively achieved. The present inventors have first discovered this.

Further, in the conventional shot peening treatment, the projection pressure is high, and the coating film is ground at the same time. Therefore, the conventional shot peening tends to have breakage of the target layer due to grinding of the coating film. In the present embodiment, in the second step, in the case of α -Al₂O₃The tensile residual stress generated in the layer is less than that of alpha-Al formed according to the conventional manufacturing method₂O₃Tensile residual stress in the layer. Therefore, α -Al is less likely to occur₂O₃Breakage of the layer and easy introduction of stress into the alpha-Al₂O₃Layer, as a result, film residual stress A_AAnd film residual stress B_AMay be a tensile residual stress and a compressive residual stress each falling within a predetermined numerical range.

Albeit with respect to the passage of alpha-Al₂O₃The layer is shot-blasted to cause residual stress A of the film_AAnd film residual stress B_AThe reason for the tensile residual stress and the compressive residual stress which respectively fall within the predetermined numerical ranges is not clear, but the present inventors consider as follows. It is considered that the crystal grains oriented in (001) direction have a resistance to external forceResistance to deformation because grains of the same crystal orientation support each other. On the other hand, it is considered that the resistance of crystal grains other than those in the (001) orientation to deformation due to external force is reduced because the crystal orientations thereof are not uniform. It is considered that since the crystal grains oriented in (001) direction and the other crystal grains differ from each other in deformability against external force, there is a difference in residual stress generated by shot peening, and as a result, the film residual stress a_ATo tensile residual stress, and film residual stress B_ACompressive residual stress.

Examples of materials for the media include steel, ceramic, alumina, zirconia, and the like.

For example, the average particle diameter of the medium is preferably 1 μm to 300 μm, and more preferably 5 μm to 200 μm.

For the medium, a commercially available product can be used. Examples thereof include ceramic abrasive grains (supplied by NICCHU; trade name: WAF120) each having a grain diameter of 90 to 125 μm (average grain diameter of 100 μm).

A distance between the projection unit of the projection medium and the surface of the rake face or the like (hereinafter, also referred to as "projection distance") is preferably 80mm to 120mm, and more preferably 80mm to 100 mm.

The pressure applied to the medium at the time of projection (hereinafter, also referred to as "projection pressure") is preferably 0.02MPa to 0.5MPa, and more preferably 0.05MPa to 0.3 MPa.

The treatment time of the shot blast is preferably 5 seconds to 60 seconds, and more preferably 10 seconds to 30 seconds.

The conditions of the shot peening can be appropriately adjusted according to the composition of the coating film.

< other steps >

In the manufacturing method according to the present embodiment, in addition to the above-described steps, another step may be appropriately performed as long as the effect of the shot peening is not impaired.

Examples

Although the present invention will be described in detail with reference to examples, the present invention is not limited thereto.

< production of cutting tool >)

< first step: step of preparing the substrate >

As the substrate, cemented carbide inserts (shape: CNMG 120408N-UX; provided by sumitomo electrical cemented carbide Co., ltd.; JIS B4120(2013)) each composed of TaC (2.0 mass%), NbC (1.0 mass%), Co (10.0 mass%), and WC (the balance) (and including unavoidable impurities) were prepared.

< second step: step of Forming coating film >

Forming an intermediate layer and alpha-Al in this order on each prepared substrate by using a CVD apparatus₂O₃A layer to form a coating on a surface of the base material including the rake face. In addition, in some samples, α -Al was formed directly on the substrate₂O₃Layers, without forming intermediate layers (sample nos. 8 and 13). The conditions for forming each layer are as follows. In the formation of alpha-Al₂O₃The final stage of the layer was cooled at the cooling rate shown in table 2, and the cooling time was as shown in table 2. The cell having "-" in table 2 indicates that the corresponding processing is not performed. It should be noted that the value in parentheses after each gas composition indicates the flow rate (L/min) of each gas. Further, alpha-Al₂O₃The thicknesses of the layers and the thicknesses and compositions of the intermediate layers are shown in table 1.

(intermediate layer)

Raw material gas: TiCl (titanium dioxide)₄(0.002L/min)、CH₄(2.0L/min)、CO(0.3L/min)、N₂(6.5L/min)、HCl(1.8L/min)、H₂(50L/min)

Pressure: 160hPa

Temperature: 1000 deg.C

Film forming time: 45 minutes

(α-Al₂O₃Layer)

Raw material gas: AlCl₃(3.0L/min)、CO₂(1.5L/min)、H₂S(2.2L/min)、H₂(40L/min)

Pressure: 65hPa

Temperature: 980 ℃ to 1000 DEG C

Cooling rate: as shown in table 2

Cooling time: as shown in table 2

Film forming time: 340 minutes

[ Table 1]

Denotes "area ratio of crystal grains other than those in (001) orientation"

[ Table 2]

< third step: step of carrying out shot peening

Next, the surface of the cutting insert (cutting tool) on which the coating film is formed, including the rake face, is subjected to shot blasting under the following conditions. The cell having "-" in table 2 indicates that the corresponding processing is not performed.

(conditions of shot blasting)

Abrasive grain concentration: 5 to 20% by weight

Projection pressure: as shown in table 2

Projection time: 5 seconds to 20 seconds

Through the above procedure, cutting tools of sample nos. 1 to 8 (examples) and 11 to 13 (comparative examples) were produced.

< evaluation of cutting tool characteristics >

By using the cutting tools of sample nos. 1 to 8 and 11 to 13 produced as described above, the characteristics of each cutting tool were evaluated as described below.

< preparation of color map >

Mirror-polishing the rake face of the cutting tool having the coating film provided thereon to produce alpha-Al₂O₃The face of the layer is machined so that it is parallel to the surface of the substrate. The processed surface thus prepared was observed at a magnification of 5000 times using an FE-SEM equipped with EBSD, to prepare the above color chart of a processed surface of 30 μm 15 μm. At this time, the productionThe number of color charts (the number of measurement fields) was 3. For each color plot, alpha-Al oriented in (001) was calculated using commercially available software (trade name: "organization Imaging Microcopy Ver 6.2", supplied by EDAX)₂O₃Area ratio of crystal grains and a-Al except in (001) orientation₂O₃The area ratio of crystal grains other than the crystal grains. The results are shown in Table 1. Further, as is apparent from table 1, in each color chart, α — Al in the (001) orientation is present with respect to the total area of the color chart₂O₃Area ratio of crystal grains and a-Al except in (001) orientation₂O₃The sum of the area ratios of crystal grains other than the crystal grains is 100%.

Adopts the 2 theta-sin²Psi method, alpha-Al was measured under the following conditions₂O₃Film residual stress in layer A_AAnd film residual stress B_A. Measured film residual stress A_AAnd film residual stress B_AShown in Table 4. In table 4, the residual stress represented by a negative number represents the compressive residual stress, and the residual stress represented by a positive number represents the tensile residual stress.

The device comprises the following steps: SmartLab (supplied by Rigaku)

X-ray: Cu/Kalpha/45 kV/200mA

A counter: D/teX Ultra250 (supplied by Rigaku)

Scanning range: residual stress A in the film_AIn the case of (1), 89.9 DEG to 91.4 DEG (tilt method) in the film residual stress B_AIn the case of (1), 37.0 to 38.4 ° (tilt method)

< measurement of residual stress by constant penetration depth method >

Furthermore, the alpha-Al content was measured under the following conditions by a constant penetration depth method₂O₃Residual stress a and residual stress B at predetermined depth positions within the layer. Table 3 shows the residual stress A (A) at representative depth positions_d10、A_d40) And B (B)_d10、B_d40). From the results of the measurement of the residual stresses A and B, it was confirmed that the residual stresses in the respective samples wereThe 1a region P1a and the 2a region P2a (the 1b region P1b and the 2b region P2b) are not present. In addition, for each sample confirmed to have the 1b region P1b and the 2b region P2b, the presence of the minimum point P3b therein was determined (table 3).

The device comprises the following steps: spring-8 BL16XU

X-ray energy: 10keV (λ 0.124nm)

X-ray beam diameter: 0.4mm to 1.8mm (varying depending on the depth of penetration)

[ Table 3]

< cutting test >

(intermittent working test)

The respective cutting tools of sample nos. 1 to 8 and 11 to 13 produced as described above were used to measure the number of times of contact with the workpiece until chipping and peeling of the coating film occurred at the cutting edge ridge line portion under the following conditions. The results are shown in Table 4. The more times of contact, the more excellent the chipping resistance of the cutting tool can be evaluated.

Test conditions for interrupted working

Workpiece: FCD450 slotted material

Cutting speed: 250m/min

Feeding: 0.25mm/rev

Cutting depth: 2mm

Cutting fluid: wet type

(continuous working test)

The respective cutting tools of sample nos. 1 to 8 and 11 to 13 produced as described above were used to measure the cutting time until the depth of crater wear was 0.1mm under the following cutting conditions. The results are shown in Table 4. The longer the cutting time, the more excellent the crater wear resistance of the cutting tool can be evaluated.

Test conditions for continuous processing

Workpiece: SCM435 round bar

Cutting speed: 250m/min

Feeding: 0.25mm/rev

Cutting depth: 2mm

Cutting fluid: wet type

[ Table 4]

In view of the results of table 4, each of the cutting tools of sample nos. 1 to 8 (examples) achieved excellent results, i.e., the number of times of contact with the workpiece until chipping and peeling occurred was 5000 times or more in the interrupted machining process. On the other hand, the number of contacts during the interrupted machining was less than 5000 times for each of the cutting tools of sample nos. 11 to 13 (comparative example). From the above results, it was found that each of the cutting tools of examples (sample nos. 1 to 8) had excellent chipping resistance.

In view of the results of table 4, each of the cutting tools of sample nos. 1 to 8 (examples) achieved excellent results, i.e., had a cutting time of 20 minutes or more in continuous machining. On the other hand, for each of the cutting tools of sample nos. 11 to 13 (comparative example), the cutting time during continuous machining was less than 20 minutes. From the above results, it was found that each of the cutting tools of examples (sample nos. 1 to 8) had excellent crater wear resistance.

Although the embodiments and examples of the present invention have been described above, it is originally intended to appropriately combine the configurations of the embodiments and examples.

The embodiments and examples disclosed herein are illustrative and not restrictive in any respect. The scope of the present invention is defined by the terms of the claims, rather than the embodiments and examples described above, and is intended to include any modifications within the meaning and scope equivalent to the terms of the claims.

The above description includes the features described below.

(pay 1)

A method of manufacturing a cutting tool, the method comprising:

a first step of preparing a base material including a rake face;

forming a layer including alpha-Al on a rake surface of a substrate using a chemical vapor deposition method₂O₃A second step of laminating the layers; and

for alpha-Al at the rake face₂O₃A third step of shot blasting the layer.

(pay 2)

The method of manufacturing a cutting tool according to note 1, wherein

The second step comprises forming alpha-Al at a temperature of 1000 ℃ to 1100 ℃ inclusive and a pressure of 0.1hPa to 100hPa inclusive₂O₃A layer, and

in the formation of alpha-Al₂O₃The final stage of the layer is continuously reduced in temperature at a rate of 0.1 to 0.3 ℃/min for a period of 30 to less than 90 minutes.

List of reference numerals

1: a rake face; 2: a flank face; 3: cutting the edge line part; 10: a substrate; 20: alpha-Al₂O₃A layer; 21: grains oriented in the (001) direction; 22: crystal grains other than those in the (001) orientation; 30: a CVD apparatus; 31: arranging a clamp on the base material; 32: a reaction vessel; 33: a temperature adjustment device; 34: a gas inlet; 35: a gas introduction pipe; 36: a through hole; 40: coating a film; 50: a cutting tool; d1: imaginary plane D1; d2: imaginary plane D2; p1 a: region 1 a; p2 a: region 2 a; p3 a: a minimum point; p1 b: a 1b region; p2 b: a 2b region; p3 b: a minimum point; r 1: region r 1.

Claims

1. A cutting tool, comprising: a substrate comprising a rake surface; and a coating film covering the rake face, wherein

The coating film includes alpha-Al disposed on the base material₂O₃A layer of a material selected from the group consisting of,

the alpha-Al₂O₃The layer comprises alpha-Al₂O₃The crystal grains of (a) are,

the alpha-Al at the rake face₂O₃In the layer, the area ratio of crystal grains oriented along (001) in the crystal grains is 50% to 90%, and

based on the alpha-Al at the rake face₂O₃Film residual stress A determined by interplanar spacing of the (001) plane of the layer_AGreater than 0MPa and not more than 2000MPa, and

based on the alpha-Al at the rake face₂O₃Film residual stress B determined by interplanar spacing of the (110) face of the layer_AIs-1000 MPa or more and less than 0 MPa.

2. The cutting tool of claim 1, wherein

The alpha-Al₂O₃The thickness of the layer is 1 μm to 20 μm,

at a region r1 between an imaginary plane D1 and an imaginary plane D2, the imaginary plane D1 is located away from the α -Al in the measurement of residual stress according to the constant penetration depth method using X-rays₂O₃The distance d of the surface of the layer opposite to the substrate facing the substrate side₁₀A distance d of₁₀Is the alpha-Al₂O₃10% of the thickness of the layer, said imaginary plane D2 being located at a distance from said alpha-Al₂O₃The distance d of the surface of the layer opposite to the substrate facing the substrate side₄₀A distance d of₄₀Is the alpha-Al₂O₃40% of the thickness of the layer,

based on the alpha-Al at the rake face₂O₃A residual stress A determined by the interplanar spacing of the (001) plane of the layer is-200 MPa or more and 2000MPa or less, and

based on the alpha-Al at the rake face₂O₃A residual stress B determined by the interplanar spacing of the (110) plane of the layer is-1500 MPa to 700MPa, and

satisfies the relation of A > B.

3. The cutting tool of claim 2, wherein

The stress distribution of the residual stress A has

The residual stress A is derived from the alpha-Al₂O₃The surface of the layer opposite to the substrate continuously decreases toward the substrate side in the 1a region, an

A 2a region which is located on the substrate side with respect to the 1a region and in which the residual stress A continuously increases from a surface opposite to the substrate toward the substrate side, and

the 1a region and the 2a region are continuous with each other through a minimum point of the residual stress a.

4. A cutting tool according to claim 2 or claim 3, wherein

The stress distribution of the residual stress B has

The residual stress B is derived from the alpha-Al₂O₃A 1b region in which the surface of the layer opposite to the substrate continuously decreases toward the substrate side, and

a 2B region which is located on the substrate side with respect to the 1B region and in which the residual stress B continuously increases from a surface opposite to the substrate toward the substrate side, and

the 1B-th and 2B-th regions are continuous with each other through a minimum point of the residual stress B.

5. The cutting tool according to any one of claims 1 to 4, wherein

The coating film also comprises a coating layer arranged on the base material and the alpha-Al₂O₃One or more intermediate layers between the layers, and

the intermediate layers each contain a compound composed of at least one element selected from the group consisting of group 4 elements, group 5 elements, group 6 elements, Al and Si in the periodic table and at least one element selected from the group consisting of C, N, B and O.