JP5383259B2 - Cutting tools - Google Patents
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- JP5383259B2 JP5383259B2 JP2009055858A JP2009055858A JP5383259B2 JP 5383259 B2 JP5383259 B2 JP 5383259B2 JP 2009055858 A JP2009055858 A JP 2009055858A JP 2009055858 A JP2009055858 A JP 2009055858A JP 5383259 B2 JP5383259 B2 JP 5383259B2
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本発明は、被覆層を基体の表面に被着形成した切削工具に関する。 The present invention relates to a cutting tool in which a coating layer is formed on the surface of a substrate.
従来より、金属の切削加工に広く用いられている切削工具は、超硬合金やサーメット、セラミックス等の基体の表面に、複数の被覆層が形成された切削工具が多用されている。前記被覆層としては、炭化チタン（ＴｉＣ）層、窒化チタン（ＴｉＮ）層、炭窒化チタン（ＴｉＣＮ）層および酸化アルミニウム（Ａｌ２Ｏ３）層等の多層構造からなる被覆層が知られており、ＴｉＣＮ層、中間層（結合層）、Ａｌ２Ｏ３層の順に成膜された被覆層が多用されている。特に、Ａｌ２Ｏ３層をα型結晶からなるαＡｌ２Ｏ３層にて構成する場合には、ＴｉＣＮ層とαＡｌ２Ｏ３層との間で剥離が発生しやすく、αＡｌ２Ｏ３層の密着力を高める必要があった。 2. Description of the Related Art Conventionally, cutting tools that are widely used for metal cutting have frequently been used in which a plurality of coating layers are formed on the surface of a substrate such as cemented carbide, cermet, or ceramic. As the coating layer, a coating layer having a multilayer structure such as a titanium carbide (TiC) layer, a titanium nitride (TiN) layer, a titanium carbonitride (TiCN) layer, and an aluminum oxide (Al 2 O 3 ) layer is known. A coating layer formed in the order of a TiCN layer, an intermediate layer (bonding layer), and an Al 2 O 3 layer is often used. In particular, when the Al 2 O 3 layer is composed of an αAl 2 O 3 layer made of α-type crystals, peeling is likely to occur between the TiCN layer and the αAl 2 O 3 layer, and the αAl 2 O 3 layer It was necessary to increase the adhesion.
特許文献１では、αＡｌ２Ｏ３層の粒径、膜厚、および（０１２）面に対する組織化係数を調整することにより、αＡｌ２Ｏ３層の密着力を向上させることが記載されている。 Patent Document 1 describes that the adhesion strength of the αAl 2 O 3 layer is improved by adjusting the particle diameter and thickness of the αAl 2 O 3 layer and the organization coefficient with respect to the (012) plane.
また、特許文献２では、αＡｌ２Ｏ３層における(０００１)面に配向している粒子が、７０面積％以上を占めることによって、Ａｌ２Ｏ３層が優れた耐チッピング性を発揮することが記載されている。 Moreover, in patent document 2, when the particle | grains orientated in the (0001) plane in the αAl 2 O 3 layer occupy 70 area% or more, the Al 2 O 3 layer can exhibit excellent chipping resistance. Have been described.
しかしながら、上記特許文献１または２に記載の切削工具も、αＡｌ２Ｏ３層とその下地層との密着力やαＡｌ２Ｏ３層の被削材に対する耐溶着性が不十分であり、鋳鉄等の中速、または高速連続切削加工のように被削材が溶着しやすく、かつ、断続的に切刃に衝撃がかかるような切削加工においては被覆層が剥離して十分な切削性能を発揮できず、このような被削材の切削加工においては被覆層の耐剥離性の向上が求められていた。 However, the cutting tool described in the above-mentioned Patent Document 1 or 2 also has insufficient adhesion strength between the αAl 2 O 3 layer and the base layer and the welding resistance to the work material of the αAl 2 O 3 layer, such as cast iron. In a cutting process where the work material is easily welded, such as medium-speed or high-speed continuous cutting, and the cutting blade is impacted intermittently, the coating layer peels off and sufficient cutting performance can be demonstrated. However, in the cutting of such a work material, improvement in the peeling resistance of the coating layer has been demanded.
従って、本発明は上記課題を解決するためになされたもので、その目的は、被削材が溶着せず、さらにαＡｌ２Ｏ３層が剥離しない安定した切削性能を発揮する切削工具を提供することである。 Accordingly, the present invention has been made to solve the above-described problems, and an object of the present invention is to provide a cutting tool that exhibits stable cutting performance in which a work material does not weld and an αAl 2 O 3 layer does not peel off. That is.
本発明者は、上記課題に対して検討した結果、αＡｌ２Ｏ３層を構成する結晶を粗粒子と微粒子が混在した構成とし、かつ、粗粒子と微粒子の結晶方位を適正化することによって、αＡｌ２Ｏ３層の耐溶着性を向上させ、かつ、αＡｌ２Ｏ３層の剥離を抑制できる結果、切削工具の耐摩耗性が向上することを知見した。 As a result of studying the above problems, the present inventor made the crystals constituting the αAl 2 O 3 layer mixed with coarse particles and fine particles, and by optimizing the crystal orientation of the coarse particles and fine particles, to improve the adhesion resistance of the alpha Al 2 O 3 layer, and results that can suppress separation of alpha Al 2 O 3 layer was found that improves the wear resistance of the cutting tool.
すなわち、本発明の切削工具は、すくい面と逃げ面との交差稜線部が切刃を構成し、基体表面に、炭窒化チタン（ＴｉＣＮ）層とα型結晶構造を有する酸化アルミニウム（Ａｌ２Ｏ３）層とを順に形成してなる切削工具において、前記すくい面において前記αＡｌ２Ｏ３層の表面を鏡面とした状態で電界放出型走査顕微鏡（ＦＥ−ＳＥＭ）を用いて後方散乱電子回折像（ＥＢＳＤ）解析から酸化アルミニウム層の各結晶の結晶方位を特定し、これに基づいてカラーマップを作成して、（０，０，０，１）面、（１，０，−１，０）面または（０，１，−１，０）面のいずれの結晶方位に、より配向しているかを確認したとき、５０〜９０面積％が長径１μｍ〜３μｍの粗粒子、０〜２０面積％が長径０．５μｍより大きくて１μｍより小さい中粒子、１０〜５０面積％が長径０．０５μｍ〜０．５μｍの微粒子で構成され、かつ、前記粗粒子のうちの８０面積％以上が（０，０，０，１）面の結晶方位に配向しているとともに、前記微粒子のうちの５０面積％以上が（１，０，
−１，０）面の結晶方位に配向していることを特徴とする。
That is, in the cutting tool of the present invention, the intersection ridge line portion between the rake face and the flank face constitutes a cutting edge, and the surface of the base has an aluminum oxide (Al 2 O) having a titanium carbonitride (TiCN) layer and an α-type crystal structure. 3 ) In a cutting tool in which layers are sequentially formed, a backscattered electron diffraction image using a field emission scanning microscope (FE-SEM) with the surface of the αAl 2 O 3 layer as a mirror surface on the rake face The crystal orientation of each crystal of the aluminum oxide layer is specified from the (EBSD) analysis, and a color map is created based on the crystal orientation , and the (0, 0, 0, 1) plane, (1, 0, -1, 0) When it is confirmed whether the crystal orientation of the plane or the (0,1, -1,0) plane is more oriented , 50 to 90 area% is a coarse particle having a major axis of 1 μm to 3 μm, 0 to 20 area% Is longer than 0.5μm and smaller than 1μm Medium particles, 10 to 50 area% are composed of fine particles having a major axis of 0.05 μm to 0.5 μm, and 80 area% or more of the coarse particles are in the (0, 0, 0, 1) plane crystal orientation. And 50% by area or more of the fine particles are (1, 0,
It is characterized by being oriented in the crystal orientation of the (1,0) plane.
ここで、前記中粒子が存在する場合にはそのうちの５０面積％以上が（０，１，−１，０）面に配向していることが望ましい。
Here, in the case where the medium particles are present, it is desirable that 50% by area or more thereof is oriented in the (0, 1, -1, 0) plane.
本発明の切削工具によれば、Ａｌ２Ｏ３層を構成する結晶がα型Ａｌ２Ｏ３結晶であって粗粒子と微粒子が混在した構成からなり、かつ、粗粒子と微粒子の配向結晶面を適正化することによって、αＡｌ２Ｏ３層の耐溶着性を向上させ、かつ、αＡｌ２Ｏ３層の剥離を抑制できる結果、切削工具の耐剥離性を向上させることができる。 According to the cutting tool of the present invention, the crystal constituting the Al 2 O 3 layer is an α-type Al 2 O 3 crystal and has a configuration in which coarse particles and fine particles are mixed, and the oriented crystal plane of the coarse particles and fine particles. by optimizing the, to improve adhesion resistance of the alpha Al 2 O 3 layer, and results that can suppress separation of alpha Al 2 O 3 layer, it is possible to improve the peeling resistance of the cutting tool.
また、前記中粒子が存在する場合にはそのうちの５０面積％以上の粒子の結晶配向が（０，１，−１，０）面に配向していることによって、αＡｌ２Ｏ３層の耐溶着性をさらに向上させることができる。 Further, when the medium particles are present, the crystal orientation of 50% by area or more of the particles is oriented in the (0, 1, −1, 0) plane, so that the αAl 2 O 3 layer is resistant to welding. The property can be further improved.
本発明の切削工具の好適例であるスローアウェイチップ（以下、チップと略す。）の一例についての概略斜視図である図１、およびその断面についての模式図である図２に基づいて説明する。図１によれば、チップ１は主面をすくい面１１および着座面（図示せず）、側面を逃げ面１２とし、すくい面１１と逃げ面１２の交差稜線部に切刃１３を有する形状からなる。そして、図２に示すように、チップ１は、基体２の表面に、ＴｉＮ層３と、ＴｉＣＮ層４と、α型結晶構造を有するＡｌ２Ｏ３層（以下、単にαＡｌ２Ｏ３層と称す。）６とが形成された被覆層８を被覆した構成からなる。 A description will be given based on FIG. 1 which is a schematic perspective view of an example of a throw-away tip (hereinafter abbreviated as a tip) which is a preferred example of the cutting tool of the present invention, and FIG. 2 which is a schematic diagram of a cross section thereof. According to FIG. 1, the chip 1 has a shape having a rake face 11 and a seating face (not shown) as main surfaces, a side face as a flank face 12, and a cutting edge 13 at a cross ridge line portion between the rake face 11 and the flank face 12. Become. As shown in FIG. 2, the chip 1 has a TiN layer 3, a TiCN layer 4, an Al 2 O 3 layer having an α-type crystal structure (hereinafter simply referred to as an αAl 2 O 3 layer) on the surface of the base 2. And a coating layer 8 on which 6 is formed.
ここで、本発明によれば、αＡｌ２Ｏ３層６を表面に露出させて、鏡面となるように加工した状態で電界放出型走査顕微鏡（ＦＥ−ＳＥＭ）を用いて後方散乱電子回折像（ＥＢＳＤ）解析からαＡｌ２Ｏ３層６の各結晶の結晶方位を特定し、これに基づいてカラーマップを作成して、（０，０，０，１）面、（１，０，−１，０）面または（０，１，−１，０）面のいずれの結晶方位に、より配向しているかを確認したとき、図３のようなマップとなる。すなわち、αＡｌ２Ｏ３結晶のうちの５０〜９０面積％、好ましくは６０〜８０面積％、特に６０〜７０面積％が長径１μｍ〜３μｍよりなる粗粒子２１からなり、０〜２０面積％、好ましくは、０〜１０面積％、特に０〜１面積％が長径０．５μｍより大きく１μｍより小さい中粒子２３からなり、１０〜５０面積％、好ましくは２０〜４０面積％、特に、３０〜４０面積％が長径０．０５μｍ〜０．５μｍの微粒子２２からなる構成となる。そして、粗粒子２１のうちの８０面積％以上、特に９０面積％以上が（０，０，０，１）面に配向し、かつ、微粒子２２のうちの５０面積％以上、特に８０面積％以上が（１，０，−１，０）面に配向している。 Here, according to the present invention, the backscattered electron diffraction image (FE-SEM) is used with a field emission scanning microscope (FE-SEM) in a state in which the αAl 2 O 3 layer 6 is exposed on the surface and processed to be a mirror surface. The crystal orientation of each crystal of the αAl 2 O 3 layer 6 is specified from the EBSD) analysis, and a color map is created based on this, and the (0, 0, 0, 1) plane, (1, 0, -1, When it is confirmed whether the crystal orientation of the (0) plane or the (0, 1, -1, 0) plane is more oriented, a map as shown in FIG. 3 is obtained. That is, 50 to 90 area%, preferably 60 to 80 area%, particularly 60 to 70 area% of αAl 2 O 3 crystal is composed of coarse particles 21 having a major axis of 1 μm to 3 μm, and 0 to 20 area%, preferably Consists of medium particles 23 having a major axis larger than 0.5 μm and smaller than 1 μm, and 10 to 50 area%, preferably 20 to 40 area%, especially 30 to 40 area%. % Is composed of fine particles 22 having a major axis of 0.05 μm to 0.5 μm. Further, 80 area% or more, particularly 90 area% or more of the coarse particles 21 are oriented in the (0, 0, 0, 1) plane, and 50 area% or more, particularly 80 area% or more of the fine particles 22. Are oriented in the (1, 0, -1, 0) plane.
すなわち、αＡｌ２Ｏ３層６を構成するαＡｌ２Ｏ３結晶が粗粒子と微粒子が混在する粗微混粒構造からなり、かつこれらの粒子の結晶方位が上記所定の方向にあることによって、αＡｌ２Ｏ３層６の被削材に対する耐溶着性を向上できると共に、αＡｌ２Ｏ３層６の耐剥離性を向上させることができる。 That is, the αAl 2 O 3 crystal constituting the αAl 2 O 3 layer 6 has a coarse / fine mixed structure in which coarse particles and fine particles are mixed, and the crystal orientation of these particles is in the predetermined direction. The welding resistance of the 2 O 3 layer 6 to the work material can be improved, and the peel resistance of the αAl 2 O 3 layer 6 can be improved.
ここで、粗粒子２１の含有量が５０面積％未満もしくは９０面積％より大きくなると、αＡｌ２Ｏ３層６の密着力が弱くなり、αＡｌ２Ｏ３層に剥離が発生してしまう。また、微粒子２２の含有比率が１０面積％未満になるかもしくは５０面積％より大きくなると、αＡｌ２Ｏ３層６に十分な密着力を付与させることができなくなる。さらに、中粒子２３の含有量が１０面積％より多い場合にもαＡｌ２Ｏ３層に剥離が発生しやすくなる。 Here, when the content of the coarse particles 21 is less than 50 area% or greater than 90 area%, the adhesion of the αAl 2 O 3 layer 6 becomes weak, and peeling occurs in the αAl 2 O 3 layer. Further, when the content ratio of the fine particles 22 is less than 10 area% or greater than 50 area%, the αAl 2 O 3 layer 6 cannot be provided with sufficient adhesion. Further, even when the content of the medium particles 23 is more than 10 area%, the αAl 2 O 3 layer is easily peeled off.
また、粗粒子２１の（０，０，０，１）面配向が８０％未満だと耐溶着性が低下する。一方、微粒子２２の（１，０，−１，０）面配向となる粒子が５０％未満であると、αＡｌ２Ｏ３層６の密着力が不十分となり、膜剥離が発生しやすくなってしまう。 Further, if the (0, 0, 0, 1) plane orientation of the coarse particles 21 is less than 80%, the welding resistance is lowered. On the other hand, when the particles having the (1,0, -1, 0) plane orientation of the fine particles 22 are less than 50%, the adhesion of the αAl 2 O 3 layer 6 becomes insufficient, and film peeling tends to occur. End up.
ここで、αＡｌ２Ｏ３層６を構成する結晶の粒径、および各結晶の結晶方位を測定する方法について説明する。測定面はすくい面１１のうちの着座面に平行な部分とし、αＡｌ２Ｏ３層６の上面から０．２μｍの深さ以内の深さだけ研磨した鏡面とする。このとき、被覆層８の表面がαＡｌ２Ｏ３層６でなく、ＴｉＮのように他の層が被覆している場合には、被覆層８を着座面と平行に研磨加工してαＡｌ２Ｏ３層６を露出させた面を測定面とする。αＡｌ２Ｏ３層６が露出している場合には上面から０．２μｍの深さ以内の深さだけ研磨した鏡面を測定面とする。 Here, a method for measuring the grain size of the crystals constituting the αAl 2 O 3 layer 6 and the crystal orientation of each crystal will be described. The measurement surface is a portion of the rake surface 11 parallel to the seating surface, and is a mirror surface polished by a depth within 0.2 μm from the upper surface of the αAl 2 O 3 layer 6. At this time, when the surface of the coating layer 8 is not the αAl 2 O 3 layer 6 but is covered with another layer such as TiN, the coating layer 8 is polished in parallel with the seating surface to obtain the αAl 2 O The surface where the three layers 6 are exposed is taken as the measurement surface. When the αAl 2 O 3 layer 6 is exposed, a mirror surface polished by a depth within 0.2 μm from the upper surface is used as the measurement surface.
測定装置は、電界放出型走査電子顕微鏡（ＦＥ−ＳＥＭ）を用い、これに後方散乱電子回折像（ＥＢＳＤ：Electron Backscatter diffrection PatternまたはＥＢＳＰとも呼ばれる。）システムが組み込まれた装置を用いる。そして、この装置を用いて後方散乱電子回折像（ＥＢＳＤ）を作成し、そのデータを解析して結晶方位データを算出し、この結晶方位データに基づいてカラーマッピング図を作成する。カラーマッピングにおいては、αＡｌ２Ｏ３層６の（０，０，０，１）面、（１，０，−１，０）面、（０，１，−１，０）面をそれぞれ異なる色に指定してマッピングすることにより、視覚的に各結晶の配向状態を認識することができる。 As a measuring apparatus, a field emission scanning electron microscope (FE-SEM) is used, and an apparatus in which a backscattered electron diffraction image (also called EBSD: Electron Backscatter Diffrection Pattern or EBSD) system is incorporated is used. Then, a backscattered electron diffraction image (EBSD) is created using this apparatus, the data is analyzed to calculate crystal orientation data, and a color mapping diagram is created based on the crystal orientation data. In color mapping, the (0, 0, 0, 1) plane, (1, 0, -1, 0) plane, and (0, 1, -1, 0) plane of the αAl 2 O 3 layer 6 have different colors. By specifying and mapping, it is possible to visually recognize the orientation state of each crystal.
本発明においては、各結晶に対して最も長く引ける対角線を長軸として、１〜３μｍを粗粒子２１、０．５μｍより大きく１μｍより小さい中粒子２３、０．０５〜０．５μｍを微粒子２２と区分する。そして、粗粒子の各結晶について結晶方位を特定し、(０，０
，０，１)面の結晶方位を示す色を呈している結晶の面積を粗粒子２１の総面積で割り、
（０，０，０，１）面に配向している粒子の割合を算出する。同様に微粒子２２の（１，０，−１，０）面に配向する色を呈している結晶の割合、中粒子２３の（０，１，−１，０）面の結晶方位への配向を示す色を呈している結晶の割合を算出する。
In the present invention, the longest diagonal line with respect to each crystal is the major axis, 1 to 3 μm are coarse particles 21, medium particles 23 that are larger than 0.5 μm and smaller than 1 μm, and 0.05 to 0.5 μm are fine particles 22. Break down. Then, the crystal orientation is specified for each crystal of the coarse particles, and (0,0
, 0, 1) the area of the crystal exhibiting a color indicating the crystal orientation of the plane is divided by the total area of the coarse particles 21;
The ratio of particles oriented in the (0, 0, 0, 1) plane is calculated. Similarly the particles 22 (1,0, -1,0) proportion of crystals exhibits a color oriented in plane, the medium particles 23 (0,1, -1,0) the orientation of the crystal orientation of the surface The ratio of crystals exhibiting the indicated color is calculated.
なお、測定に際しては、観察する画像の倍率は７，５００倍として１５μｍ四方のカラーマッピングにて分析する。また、このカラーマッピングを３視野について行い、これらの測定値の平均値を測定値とする。 In the measurement, the magnification of the image to be observed is 7,500, and analysis is performed by color mapping of 15 μm square. Further, this color mapping is performed for three visual fields, and the average value of these measured values is taken as the measured value.
ここで、本発明によれば、αＡｌ２Ｏ３層６において、中粒子２３の存在比率が２０面積％以下であることが、αＡｌ２Ｏ３層６の密着力を向上させることができるために望ましい。つまり、中粒子２３の含有量を２０面積％以下として、αＡｌ２Ｏ３層６の結晶状態を粗微混粒の組織とすることによってαＡｌ２Ｏ３層６の付着力を高めることができる。 Here, according to the present invention, in the αAl 2 O 3 layer 6, the presence ratio of the medium particles 23 is 20 area% or less, so that the adhesion of the αAl 2 O 3 layer 6 can be improved. desirable. That is, the content of the medium particles 23 as 20 area% or less, it is possible to increase the adhesion of alpha Al 2 O 3 layer 6 by the alpha Al 2 O 3 layer 6 in the crystalline state of the crude fine mixed grain tissue.
なお、中粒子２３が存在する場合であっても、中粒子２３のうちの５０面積％以上、特に、８０面積％以上の粒子の結晶配向が（０，１，−１，０）面に配向していることが、αＡｌ２Ｏ３層６の被削材に対する耐溶着性が向上するため望ましい。 Even in the case where the medium particles 23 are present, the crystal orientation of the particles of 50 area% or more, particularly 80 area% or more of the medium particles 23 is oriented in the (0, 1, -1, 0) plane. This is desirable because the welding resistance of the αAl 2 O 3 layer 6 to the work material is improved.
一方、ＴｉＣＮ層４は、高い硬度と靭性を有するため、工具１の耐摩耗性および耐欠損性を向上させることができる。特に、筋状結晶構造をなす筋状ＴｉＣＮ結晶とすることにより、工具１の耐摩耗性および耐欠損性を向上させることができる。また、幅の狭い筋状ＴｉＣＮ結晶にて構成されるＴｉＣＮ層の上に、幅の広い結晶構造をなす筋状のＴｉＣＮ結晶からなるＴｉＣＮ層を設けることによって、αＡｌ２Ｏ３層６の密着力をさらに向上させることができるため望ましい。 On the other hand, since the TiCN layer 4 has high hardness and toughness, the wear resistance and fracture resistance of the tool 1 can be improved. In particular, by using a streak TiCN crystal having a streak crystal structure, the wear resistance and fracture resistance of the tool 1 can be improved. Further, by providing a TiCN layer made of a streak-like TiCN crystal having a wide crystal structure on a TiCN layer composed of a narrow streak-like TiCN crystal, the adhesion force of the αAl 2 O 3 layer 6 is provided. Can be further improved.
さらに、αＡｌ２Ｏ３層６とＴｉＣＮ層４との間には、Ｔｉ、Ａｌ、炭素および窒素を主成分とする中間層５が設けられている。特に、中間層５は、αＡｌ２Ｏ３層６と接する下層として酸素を１５〜２５原子％含有し、かつ、厚みが０．５〜３０ｎｍからなることが、αＡｌ２Ｏ３層６の密着力を向上させることができるため望ましい。 Further, an intermediate layer 5 mainly composed of Ti, Al, carbon, and nitrogen is provided between the αAl 2 O 3 layer 6 and the TiCN layer 4. In particular, the intermediate layer 5, oxygen containing 15 to 25 atomic% as a lower layer in contact with the alpha Al 2 O 3 layer 6, and the thickness is from 0.5~30nm is, adhesion of alpha Al 2 O 3 layer 6 Can be improved, which is desirable.
また、αＡｌ２Ｏ３層６の上層にＴｉＮ層を形成した場合には、被覆層表面の摺動性、外観等の調整が可能となる。すなわち、ＴｉＮ層は金色を呈するため、切削工具１を使用したときに表層が摩耗して使用済みかどうかの判別がつきやすく、また、摩耗の進行を容易に確認できるため望ましい。なお、表層はＴｉＮ層に限定されるものではなく、摺動性を高めるためにＤＬＣ（ダイヤモンドライクカーボン）層やＣｒＮ層を形成する場合もある。表層をなすＴｉＮ層の厚みは２．０μｍ以下であることが望ましく、かかる表層の剥離強度がαＡｌ２Ｏ３層６の剥離強度よりも低いことが使用の有無を目視で確認しやすくなる点で望ましい。 Further, when a TiN layer is formed on the αAl 2 O 3 layer 6, it is possible to adjust the slidability, appearance, etc. of the surface of the coating layer. That is, since the TiN layer exhibits a gold color, it is desirable that when the cutting tool 1 is used, it is easy to determine whether the surface layer is worn and used, and the progress of wear can be easily confirmed. The surface layer is not limited to the TiN layer, and a DLC (diamond-like carbon) layer or a CrN layer may be formed in order to improve slidability. The thickness of the TiN layer constituting the surface layer is desirably 2.0 μm or less, and the fact that the peel strength of the surface layer is lower than the peel strength of the αAl 2 O 3 layer 6 makes it easy to visually check whether it is used or not. desirable.
さらに、ＴｉＣＮ層４と基体２との間に下地層として配設されるＴｉＮ層３は、基体２の成分が被覆層８に拡散することを抑制する効果がある。 Further, the TiN layer 3 disposed as a base layer between the TiCN layer 4 and the substrate 2 has an effect of suppressing the diffusion of the components of the substrate 2 into the coating layer 8.
なお、切削工具１の基体２は、炭化タングステン（ＷＣ）と、所望により周期表第４、５、６族金属の炭化物、窒化物、炭窒化物の群から選ばれる少なくとも１種からなる硬質相をコバルト（Ｃｏ）および／またはニッケル（Ｎｉ）等の鉄属金属からなる結合相にて結合させた超硬合金や、Ｔｉ基サーメット、またはＳｉ３Ｎ４、Ａｌ２Ｏ３、ダイヤモンド、立方晶窒化ホウ素（ｃＢＮ）等のセラミックスのいずれかが好適に使用できる。中でも、基体２は、超硬合金またはサーメットからなることが耐欠損性および耐摩耗性の点で望ましい。
（製造方法）
ここで、本発明の切削工具を作製する方法の一例について説明する。
The base 2 of the cutting tool 1 is a hard phase composed of tungsten carbide (WC) and, if desired, at least one selected from the group consisting of carbides, nitrides, and carbonitrides of Group 4, 5, and 6 metals of the periodic table. Cemented carbide in which a binder phase composed of an iron group metal such as cobalt (Co) and / or nickel (Ni) is bonded, Ti-based cermet, Si 3 N 4 , Al 2 O 3 , diamond, cubic crystal Any ceramic such as boron nitride (cBN) can be suitably used. Among these, it is desirable that the substrate 2 is made of cemented carbide or cermet in terms of fracture resistance and wear resistance.
(Production method)
Here, an example of a method for producing the cutting tool of the present invention will be described.
まず、基体２となる硬質合金を焼成によって形成しうる金属炭化物、窒化物、炭窒化物、酸化物等の無機物粉末に、金属粉末、カーボン粉末等を適宜添加、混合し、プレス成形、鋳込成形、押出成形、冷間静水圧プレス成形等の公知の成形方法によって所定の工具形状に成形した後、真空中または非酸化性雰囲気中にて焼成することによって上述した硬質合金からなる基体２を作製する。そして、上記基体２の表面に所望によって研磨加工や切刃部のホーニング加工を施す。 First, metal powder, carbon powder, etc. are appropriately added to and mixed with inorganic powders such as metal carbides, nitrides, carbonitrides, oxides, etc. that can form a hard alloy to be the base 2 by firing, press molding, casting After forming into a predetermined tool shape by a known molding method such as molding, extrusion molding, cold isostatic pressing, etc., the substrate 2 made of the hard alloy described above is fired in a vacuum or non-oxidizing atmosphere. Make it. Then, the surface of the base 2 is subjected to polishing or honing of the cutting edge as desired.
次に、その表面に化学気相蒸着（ＣＶＤ）法によって表面被覆層を成膜する。
まず、反応ガス組成として四塩化チタン（ＴｉＣｌ４）ガスを０．５〜１０体積％、窒素（Ｎ２）ガスを１０〜６０体積％、残りが水素（Ｈ２）ガスからなる混合ガスを調整して反応チャンバ内に導入し、チャンバ内を８００〜９４０℃、８〜５０ｋＰａの条件で下地層であるＴｉＮ層３を成膜する。
Next, a surface coating layer is formed on the surface by chemical vapor deposition (CVD).
First, a mixed gas composed of 0.5 to 10% by volume of titanium tetrachloride (TiCl 4 ) gas, 10 to 60% by volume of nitrogen (N 2 ) gas, and the balance of hydrogen (H 2 ) gas is prepared as a reaction gas composition. Then, it is introduced into the reaction chamber, and a TiN layer 3 as a base layer is formed in the chamber under conditions of 800 to 940 ° C. and 8 to 50 kPa.
次に、反応ガス組成として、体積％で四塩化チタン（ＴｉＣｌ４）ガスを０．５〜１０体積％、窒素（Ｎ２）ガスを１０〜６０体積％、アセトニトリル（ＣＨ３ＣＮ）ガスを０．１〜３．０体積％、残りが水素（Ｈ２）ガスからなる混合ガスを調整して反応チャンバ内に導入し、成膜温度を７８０〜８８０℃、５〜２５ｋＰａにてＴｉＣＮ層４を成膜する。 Next, as a reaction gas composition, titanium tetrachloride (TiCl 4 ) gas is 0.5 to 10% by volume, nitrogen (N 2 ) gas is 10 to 60% by volume, and acetonitrile (CH 3 CN) gas is 0% by volume. A mixed gas composed of 0.1 to 3.0% by volume and the remainder consisting of hydrogen (H 2 ) gas was prepared and introduced into the reaction chamber, and the TiCN layer 4 was formed at a film formation temperature of 780 to 880 ° C. and 5 to 25 kPa. Form a film.
ここで、上記成膜条件のうち、反応ガス中のアセトニトリルガスの割合が０．１〜０．４体積％に調整すること、および成膜温度を７８０℃〜８８０℃とすることが、断面観察において下側部分が微細な筋状晶をなすＴｉＣＮ層（ＭＴ−ＴｉＣＮ層）を形成できるために望ましい。 Here, of the above film forming conditions, the ratio of acetonitrile gas in the reaction gas is adjusted to 0.1 to 0.4% by volume, and the film forming temperature is set to 780 ° C. to 880 ° C. In this case, the TiCN layer (MT-TiCN layer) in which the lower portion forms fine streak crystals is desirable.
また、ＴｉＣＮ層４の上側部分の成膜条件として、四塩化チタン（ＴｉＣｌ４）ガスを２．５〜４体積％、メタン（ＣＨ４）ガスを０．１〜１０体積％、窒素（Ｎ２）ガスを０〜１５体積％、残りが水素（Ｈ２）ガスからなる混合ガスを調整して反応チャンバ内に導入し、チャンバ内を９５０〜１１００℃、５〜４０ｋＰａとすることが望ましい。 Further, as film formation conditions for the upper portion of the TiCN layer 4, titanium tetrachloride (TiCl 4 ) gas is 2.5 to 4 % by volume, methane (CH 4 ) gas is 0.1 to 10% by volume, nitrogen (N 2 It is desirable that a mixed gas consisting of 0 to 15% by volume of gas and the remainder of hydrogen (H 2 ) gas is prepared and introduced into the reaction chamber, and the chamber is 950 to 1100 ° C. and 5 to 40 kPa.
その後、中間層５を下記ａ工程にて成膜する。具体的な条件としては、まず、四塩化チタン（ＴｉＣｌ４）ガスを１〜５体積％、メタン（ＣＨ４）ガスを４〜１０体積％、窒素（Ｎ２）ガスを１０〜３０体積％、一酸化炭素（ＣＯ）ガスを４〜１０体積％、残りが水素（Ｈ２）ガスからなる混合ガスを調整する。これらの混合ガスを調整して反応チャンバ内に導入し、チャンバ内を９５０〜１１００℃、ガス圧５〜４０ｋＰａ、成膜時間を２０〜６０分とする（ａ−１工程）。 Thereafter, the intermediate layer 5 is formed in the following step a. As specific conditions, first, titanium tetrachloride (TiCl 4 ) gas is 1 to 5% by volume, methane (CH 4 ) gas is 4 to 10% by volume, nitrogen (N 2 ) gas is 10 to 30% by volume, A mixed gas composed of 4 to 10% by volume of carbon monoxide (CO) gas and the balance of hydrogen (H 2 ) gas is prepared. These mixed gases are adjusted and introduced into the reaction chamber, and the inside of the chamber is set to 950 to 1100 ° C., the gas pressure is set to 5 to 40 kPa, and the film formation time is set to 20 to 60 minutes (step a-1).
次に、二酸化炭素（ＣＯ２）ガスを１〜３体積％、残りが窒素（Ｎ２）ガスとし、この混合ガスを反応チャンバ内に導入し、反応チャンバ内の温度を９５０〜１１００℃、圧力を５〜４０ｋＰａにして、処理時間を１０〜６０分として前記ａ−１工程で成膜された部分を酸化する処理を行う（ａ−２工程）。 Next, carbon dioxide (CO 2 ) gas is 1 to 3% by volume, and the remainder is nitrogen (N 2 ) gas. This mixed gas is introduced into the reaction chamber, the temperature in the reaction chamber is set to 950 to 1100 ° C., pressure Is set to 5 to 40 kPa, and the treatment time is set to 10 to 60 minutes to oxidize the portion formed in the step a-1 (step a-2).
このａ−１工程とａ−２工程によって中間層５を極薄く形成できる。形成された中間層５は適正な酸素量を有するが、これが、この後に成膜されるＡｌ２Ｏ３層を構成する結晶がα型Ａｌ２Ｏ３結晶となり、α型Ａｌ２Ｏ３結晶の成長を本発明の範囲内とするために必要である。 The intermediate layer 5 can be formed extremely thin by the steps a-1 and a-2. The formed intermediate layer 5 has an appropriate amount of oxygen. This is because the crystals constituting the Al 2 O 3 layer to be formed later are α-type Al 2 O 3 crystals, and the α-type Al 2 O 3 crystals are formed. It is necessary for the growth to be within the scope of the present invention.
そして、上記ａ工程にて形成された中間層５の表面に、水素（Ｈ２）ガスをキャリアガスとして塩化アルミニウム（ＡｌＣｌ３）を流すことによってαＡｌ２Ｏ３層６の核形成を行う（ｂ工程）。本発明によれば、この核形成処理工程（ｂ工程）を下記２つの工程に分けて行う。すなわち、まず、三塩化アルミニウム（ＡｌＣｌ３）ガスを２．０〜５．０体積％、残りが水素（Ｈ２）ガスからなる混合ガスを用いて、この混合ガスを反応チャンバ内に導入し、反応チャンバ内の温度を９５０〜１１００℃、圧力を５〜４０ｋＰａ、処理時間を５〜１０分として成膜を行う。これによって、中間層５の表面部分にαＡｌ２Ｏ３層６の粗粒子の核が生成する（ｂ−１工程）。次に、ＡｌＣｌ３ガスの量を０．５〜１．５体積％として、反応チャンバ内の温度を９５０〜１１００℃、圧力を５〜４０ｋＰａ、処理時間を１〜４分として成膜を行う。これによってαＡｌ２Ｏ３の微粒子の核が生成する（ｂ−２工程）。このように粗粒子の核を生成させた後に微粒子の核を生成させることによって、αＡｌ２Ｏ３粒子が粗粒子と微粒子との２種類の粒径群からなるとともに結晶の方位を特定の方向に制御したαＡｌ２Ｏ３層６を作製することができる。 Then, nucleation of the αAl 2 O 3 layer 6 is performed by flowing aluminum chloride (AlCl 3 ) using hydrogen (H 2 ) gas as a carrier gas on the surface of the intermediate layer 5 formed in the step a (b). Process). According to the present invention, this nucleation process step (step b) is performed in the following two steps. That is, first, using a mixed gas composed of 2.0 to 5.0% by volume of aluminum trichloride (AlCl 3 ) gas and the remaining hydrogen (H 2 ) gas, this mixed gas is introduced into the reaction chamber, Film formation is performed at a temperature in the reaction chamber of 950 to 1100 ° C., a pressure of 5 to 40 kPa, and a processing time of 5 to 10 minutes. Thereby, nuclei of coarse particles of the αAl 2 O 3 layer 6 are generated on the surface portion of the intermediate layer 5 (step b-1). Next, the AlCl 3 gas amount is set to 0.5 to 1.5% by volume, the temperature in the reaction chamber is set to 950 to 1100 ° C., the pressure is set to 5 to 40 kPa, and the processing time is set to 1 to 4 minutes. As a result, nuclei of αAl 2 O 3 fine particles are generated (step b-2). By generating the nuclei of the fine particles after generating the nuclei of the coarse particles in this way, the αAl 2 O 3 particles are composed of two types of particle size groups of the coarse particles and the fine particles, and the crystal orientation is set in a specific direction. A controlled αAl 2 O 3 layer 6 can be produced.
そして、引き続き、αＡｌ２Ｏ３層６を成膜する。αＡｌ２Ｏ３層６の成膜方法としては、三塩化アルミニウム（ＡｌＣｌ３）ガスを０．５〜３．０体積％、塩化水素（ＨＣｌ）ガスを１．０〜３．０体積％、二酸化炭素（ＣＯ２）ガスを１．０〜５．０体積％、硫化水素（Ｈ２Ｓ）ガスを０．２〜０．４体積％、残りが水素（Ｈ２）ガスからなる混合ガスを用い、９５０〜１０５０℃、５〜１０ｋＰａとすることが望ましい。 Subsequently, an αAl 2 O 3 layer 6 is formed. As a method for forming the αAl 2 O 3 layer 6, aluminum trichloride (AlCl 3 ) gas is 0.5 to 3.0% by volume, hydrogen chloride (HCl) gas is 1.0 to 3.0% by volume, dioxide dioxide. A mixed gas composed of 1.0 to 5.0% by volume of carbon (CO 2 ) gas, 0.2 to 0.4% by volume of hydrogen sulfide (H 2 S) gas, and the remainder consisting of hydrogen (H 2 ) gas is used. 950-1050 ° C., 5-10 kPa is desirable.
また、所望により、表層（ＴｉＮ層等）を成膜する。具体的な成膜条件は、反応ガス組成として四塩化チタン（ＴｉＣｌ４）ガスを０．１〜１０体積％、窒素（Ｎ２）ガスを５〜６０体積％、残りが水素（Ｈ２）ガスからなる混合ガスを調整して反応チャンバ内に導入し、チャンバ内を９６０〜１１００℃、１０〜８５ｋＰａとすればよい。 If desired, a surface layer (TiN layer or the like) is formed. Specific film forming conditions are as follows: titanium tetrachloride (TiCl 4 ) gas is 0.1 to 10% by volume, nitrogen (N 2 ) gas is 5 to 60% by volume, and the remainder is hydrogen (H 2 ) gas. The mixed gas consisting of the above may be adjusted and introduced into the reaction chamber, and the inside of the chamber may be set to 960 to 1100 ° C. and 10 to 85 kPa.
そして、所望により、成膜した被覆層３表面の少なくとも切刃部を研磨加工する。この研磨加工により、切刃部が平滑に加工され、被削材の溶着を抑制して、さらに耐欠損性に優れた工具となる。 Then, if desired, at least the cutting edge portion on the surface of the formed coating layer 3 is polished. By this polishing process, the cutting edge portion is processed smoothly, the welding of the work material is suppressed, and the tool is further excellent in fracture resistance.
平均粒径１．５μｍの炭化タングステン（ＷＣ）粉末に対して、平均粒径１．２μｍの金属コバルト（Ｃｏ）粉末を６質量％の割合で添加、混合して、プレス成形により切削工具形状（ＣＮＭＡ１２０４１２）に成形した後、脱バインダ処理を施し、０．５〜１００Ｐａの真空中、１４００℃で１時間焼成して超硬合金を作製した。さらに、作製した超硬合金にブラシ加工にてすくい面側について刃先処理（Ｒホーニング）を施した。 A metal cobalt (Co) powder with an average particle diameter of 1.2 μm is added to and mixed with tungsten carbide (WC) powder with an average particle diameter of 1.5 μm at a ratio of 6% by mass, and the cutting tool shape ( After forming into CNMA12041), a binder removal treatment was performed, followed by firing at 1400 ° C. for 1 hour in a vacuum of 0.5 to 100 Pa to produce a cemented carbide. Furthermore, the cutting edge process (R honing) was given to the rake face side by brushing to the manufactured cemented carbide.
次に、上記超硬合金に対して、ＣＶＤ法により、ＴｉＣｌ４ガスを２．０体積％、Ｎ２ガスを３３体積％、残りがＨ２ガスからなる混合ガスを反応チャンバ内に導入し、チャンバ内を８８０℃、１６ｋＰａとして下地層のＴｉＮ層を０．１μｍ成膜し、次に、ＴｉＣｌ４ガスを２．５体積％、Ｎ２ガスを２３体積％、ＣＨ３ＣＮガスを０．４体積％、残りがＨ２ガスからなる混合ガスを反応チャンバ内に導入し、チャンバ内を８６５℃、９ｋＰａとして平均結晶幅が０．３μｍの筋状ＴｉＣＮ層を５μｍ成膜し、続いて、ＴｉＣｌ４ガスを２．５体積％、Ｎ２ガスを１０体積％、ＣＨ３ＣＮガスを０．９体積％、残りがＨ２ガスからなる混合ガスを反応チャンバ内に導入し、チャンバ内を８６５℃、９ｋＰａとして平均結晶幅が０．８μｍの筋状ＴｉＣＮ層を０．５μｍ成膜した。その後、表１の条件の工程を表２に示す順に成膜して、中間層を１５ｎｍ、αＡｌ２Ｏ３層を４．５μｍおよび最表層のＴｉＮ層を０．５μｍ成膜した。そして、被覆層の表面をすくい面側から３０秒間ブラシ加工して試料Ｎｏ．１〜２０の切削工具を作製した。 Next, a mixed gas composed of 2.0% by volume of TiCl 4 gas, 33% by volume of N 2 gas, and the remainder of H 2 gas is introduced into the reaction chamber by CVD, with respect to the cemented carbide, The inside of the chamber was 880 ° C. and 16 kPa, and a TiN layer of 0.1 μm was formed as a base layer. Next, TiCl 4 gas was 2.5 vol%, N 2 gas was 23 vol%, and CH 3 CN gas was 0.4 vol. A mixed gas consisting of volume% and the remainder of H 2 gas was introduced into the reaction chamber, and a streaked TiCN layer having an average crystal width of 0.3 μm was formed at 865 ° C. and 9 kPa in the chamber, followed by TiCl. A mixed gas consisting of 2.5% by volume of 4 gases, 10% by volume of N 2 gas, 0.9% by volume of CH 3 CN gas, and the remaining H 2 gas was introduced into the reaction chamber, and the inside of the chamber was 865 ° C. 9 kPa and the average crystal width is 0.8 A 0.5 μm thick TiCN layer having a thickness of 0.5 μm was formed. Thereafter, the steps under the conditions shown in Table 1 were formed in the order shown in Table 2, and the intermediate layer was formed to 15 nm, the αAl 2 O 3 layer was formed to 4.5 μm, and the outermost TiN layer was formed to 0.5 μm. Then, the surface of the coating layer was brushed for 30 seconds from the rake face side, and sample No. 1 to 20 cutting tools were produced.
得られた工具について、主面を研磨加工し、αＡｌ２Ｏ３層が表面から０．２μｍ以内の深さだけ研磨された鏡面状態で露出するように研磨加工した。そして、この研磨面に対して電界放出型走査電子顕微鏡（ＦＥ−ＳＥＭ）を用いてＥＢＳＤ解析からαＡｌ２Ｏ３層を構成する各αＡｌ２Ｏ３結晶の粒径、粗粒子、微粒子、中粒子の存在割合、および各結晶の結晶方位を測定した。なお、測定には上記ＥＢＳＤ解析からαＡｌ２Ｏ３層の各結晶の結晶方位を特定したデータに基づいて作成したカラーマッピングを用いた。ここで、カラーマッピング像においては、酸化アルミニウム層の（０，０，０，１）面を赤色、（１，０，−１，０）面を青色、（０，１，−１，０）面を緑色として示した。 About the obtained tool, the main surface was polished and polished so that the αAl 2 O 3 layer was exposed in a mirror surface state polished by a depth of 0.2 μm or less from the surface. Then, the particle size, coarse particles, fine particles, and medium particles of each αAl 2 O 3 crystal constituting the αAl 2 O 3 layer from EBSD analysis using a field emission scanning electron microscope (FE-SEM) on this polished surface And the crystal orientation of each crystal were measured. Incidentally, using the color mappings created based on the data identifying the crystal orientation of the crystal of alpha Al 2 O 3 layer from the EBSD analysis for the measurement. Here, in the color mapping image, the (0, 0, 0, 1) plane of the aluminum oxide layer is red, the (1, 0, -1, 0) plane is blue, and (0, 1, -1, 0). The surface is shown as green.
そして、全ての粗粒子に対して、(０，０，０，１)面の赤色になっている粒子を特定して粗粒子の総面積で割り、粗粒子のうちの（０，０，０，１）面に配向している結晶の割合を算出した。同様に微粒子の（１，０，−１，０）面に配向している結晶の割合、中粒子の（０，１，−１，０）面に配向している結晶の割合を算出した。このとき、測定する画像の倍率は７，５００倍とし、１５μｍ四方を１視野として３視野について測定を行い
、これらの測定値の平均値を各結晶の測定値とした。結果は表３に示した。
Then, for all the coarse particles, the (0, 0, 0, 1) face red particles are specified and divided by the total area of the coarse particles, and (0, 0, 0 1) The ratio of crystals oriented in the plane was calculated. Similarly the particles (1,0, -1,0) proportion of crystals oriented in the plane of the medium particles (0,1, -1,0) and calculating the ratio of crystal oriented in the plane. At this time, the magnification of the image to be measured was 7,500 times, the measurement was performed for three visual fields with one 15 μm square as one visual field, and the average value of these measured values was taken as the measured value of each crystal. The results are shown in Table 3.
そして、この切削工具を用いて下記の条件により、断続切削試験を行い、耐欠損性を評価した。
被削材 ：ダクタイル鋳鉄８本溝入りスリーブ材（ＦＣＤ７００）
工具形状：ＣＮＭＡ１２０４１２
切削速度：３００ｍ／分
送り速度：０．３ｍｍ／ｒｅｖ
切り込み：１．０ｍｍ
その他 ：水溶性切削液使用
評価項目： 摩耗量が０．３ｍｍとなった時の切削時間を測定した。また、切削直後、切削時間３分経過した後の切刃の状態をそれぞれ観察した。結果は表４に示した。
And the intermittent cutting test was done on condition of the following using this cutting tool, and fracture resistance was evaluated.
Work Material: Ductile Iron 8 Slotted Sleeve Material (FCD700)
Tool shape: CNMA120204
Cutting speed: 300 m / min Feeding speed: 0.3 mm / rev
Cutting depth: 1.0mm
Others: Use of water-soluble cutting fluid Evaluation item: The cutting time when the amount of wear was 0.3 mm was measured. Moreover, the state of the cutting blade was observed immediately after cutting and after 3 minutes of cutting time. The results are shown in Table 4.
表１〜４より、試料Ｎｏ．９〜２０では、切刃のαＡｌ２Ｏ３層が早期に剥離したため、摩耗の進行が早まり、十分な工具寿命を得ることができなかった。 From Tables 1-4, sample No. In Nos. 9 to 20, since the αAl 2 O 3 layer of the cutting edge peeled off early, the progress of wear was accelerated and a sufficient tool life could not be obtained.
これに対して、本発明のαＡｌ２Ｏ３層を成膜した試料１〜８では、切削評価においてαＡｌ２Ｏ３層の剥離や切刃チッピング、被削材の溶着が抑制され、耐摩耗性が優れた切削性能を有するものであった。 On the other hand, in samples 1 to 8 in which the αAl 2 O 3 layer of the present invention was formed, peeling of the αAl 2 O 3 layer, chipping of the cutting edge, and welding of the work material were suppressed in cutting evaluation, and wear resistance Has excellent cutting performance.
１ 切削工具
２ 基体
３ 窒化チタン（ＴｉＮ）層
４ 炭窒化チタン（ＴｉＣＮ）層
５ 中間層
６ α型結晶構造を有する酸化アルミニウム層（αＡｌ２Ｏ３層）
８ 被覆層
１１ すくい面
１２ 逃げ面
１３ 切刃
２１ 粗粒子
２２ 微粒子
２３ 中粒子
DESCRIPTION OF SYMBOLS 1 Cutting tool 2 Base | substrate 3 Titanium nitride (TiN) layer 4 Titanium carbonitride (TiCN) layer 5 Intermediate layer 6 Aluminum oxide layer (αAl 2 O 3 layer) having α-type crystal structure
8 Coating layer 11 Rake face 12 Flank face 13 Cutting edge 21 Coarse particles 22 Fine particles 23 Medium particles
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