CN112820739A - Tft阵列基板及其制备方法 - Google Patents
Tft阵列基板及其制备方法 Download PDFInfo
- Publication number
- CN112820739A CN112820739A CN202110002999.3A CN202110002999A CN112820739A CN 112820739 A CN112820739 A CN 112820739A CN 202110002999 A CN202110002999 A CN 202110002999A CN 112820739 A CN112820739 A CN 112820739A
- Authority
- CN
- China
- Prior art keywords
- binding
- tft array
- array substrate
- metal layer
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 68
- 238000002360 preparation method Methods 0.000 title description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 45
- 239000002184 metal Substances 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 8
- 125000006850 spacer group Chemical group 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- -1 silicide nitride Chemical class 0.000 claims description 3
- 239000000463 material Substances 0.000 description 11
- 239000003599 detergent Substances 0.000 description 9
- 239000012459 cleaning agent Substances 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 229910004205 SiNX Inorganic materials 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000003814 drug Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000009545 invasion Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Manufacturing & Machinery (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
一种TFT阵列基板,包括阵列驱动区以及位于所述阵列驱动区一侧的绑定区,所述TFT阵列基板还包括柔性衬底、设置于所述柔性衬底上的缓冲层、设置于所述缓冲层上的第一金属层以及覆盖所述第一金属层的绝缘层,所述绝缘层上具有多个间隔排列的绑定端子,多个所述绑定端子位于所述绑定区,所述绝缘层还具有与多个所述绑定端子对应设置的多个过孔,每一所述绑定端子经由对应的所述过孔与所述第一金属层电连接;其中,位于所述绑定区的部分所述绝缘层上还设置有挡墙,所述挡墙围绕多个所述绑定端子排列形成的第一区域D设置。
Description
技术领域
本申请涉及显示技术领域,尤其涉及一种TFT阵列基板及制备方法。
背景技术
TFT-LCD(Thin Film Transistor Liquid Crystal Display,薄膜晶体管-液晶显示器)作为一种平板显示装置,因其具有体积小、功耗低、无辐射以及制作成本相对较低等特点,而越来越多地被应用于高性能显示领域当中。该TFT-LCD是通过绑定(Bonding)一些驱动芯片,来控制像素电极和公共电极之间的电场大小,以达到控制液晶分子偏转角度的目的,最终显示预期的画面。为了实现驱动芯片的绑定,通常在该TFT-LCD的阵列基板的绑定区,制作绑定端子,利用驱动芯片的引脚与绑定端子电连接,从而实现驱动芯片与TFT阵列基板的绑定。
当前运用TFT-LCD技术的TV产品在进行清洁剂测试时容易出现绑定端子的腐蚀,给产品竞争力造成影响。根本原因是清洁剂测试时喷洒药液流经绑定端子时,绑定端子所在的焊接区(bonding pad)防护较弱导致清洁剂侵入而产生腐蚀。
综上所述,急需提供一种TFT阵列基板及制备方法,以解决上述技术问题。
发明内容
本申请提供一种TFT阵列基板及制备方法,以解决现有的TFT阵列基板及制备方法,由于绑定端子所在的焊接区的防护能力较弱导致清洁剂测试时,清洁剂侵入绑定端子而产生腐蚀的技术问题。
为达到上述目的,本申请实施例采用如下技术方案:
本申请实施例提供一种TFT阵列基板,包括阵列驱动区以及位于所述阵列驱动区一侧的绑定区,所述TFT阵列基板还包括柔性衬底、设置于所述柔性衬底上的缓冲层、设置于所述缓冲层上的第一金属层以及覆盖所述第一金属层的绝缘层,所述绝缘层上具有多个间隔排列的绑定端子,多个所述绑定端子位于所述绑定区,所述绝缘层还具有与多个所述绑定端子对应设置的多个过孔,每一所述绑定端子经由对应的所述过孔与所述第一金属层电连接;
其中,位于所述绑定区的部分所述绝缘层上还设置有挡墙,所述挡墙围绕多个所述绑定端子排列形成的第一区域D设置。
在一些实施例中,所述挡墙为将所述第一区域D四面包围后形成的一闭环图案。
在一些实施例中,所述挡墙为将所述第一区域D三面包围且未包围的一面靠近所述阵列驱动区的开环图案。
在一些实施例中,所述挡墙为间隔物挡墙,所述间隔物挡墙的材料为有机色阻。
在一些实施例中,所述挡墙的宽度为20~400um,所述挡墙的高度为3~6um。
在一些实施例中,每一所述绑定端子均包括一端部及一走线,每一所述绑定端子中,所述走线的一端连接所述端部,另一端经对应的所述过孔与所述第一金属层电连接。
在一些实施例中,多个所述端部的形状均为矩形,多个所述端部沿直线排列。
在一些实施例中,所述柔性衬底的材料为聚酰亚胺,所述缓冲层以及所述绝缘层的材料为氮硅化物或者氮氧化物,所述第一金属层的材料为铝或铜。
本申请实施例还提供一种如上所述TFT阵列基板的制备方法,其特征在于,所述方法包括:
S10,在一柔性衬底上形成缓冲层;
S20,在所述缓冲层上沉积金属材料并进行图案化,形成第一金属层;
S30,形成覆盖所述第一金属层的绝缘层,对所述绝缘层进行图案化,形成多个间隔设置的过孔;
S40,在所述绝缘层上形成多个间隔的绑定端子,每一所述绑定端子位于所述过孔上方,并经由对应的所述过孔与所述第一金属层电连接;
S50,在所述绝缘层上涂布一有机色阻形成挡墙,所述挡墙围绕多个所述绑定端子排列形成的第一区域D设置。
在一些实施例中,所述所述挡墙的宽度为20~400um,所述挡墙的高度为3~6um。
本申请实施例所提供的TFT阵列基板及制备方法,在多个所述绑定端子排列形成的第一区域D外围设置挡墙,对清洁剂测试时侵入绑定端子的清洁剂药液进行阻挡,有效的防止绑定端子受到清洁剂侵袭导致的腐蚀不良,进一步提升了TFT阵列基板的产品性能。
附图说明
下面结合附图,通过对本申请的具体实施方式进行详细描述。
图1为本申请实施例提供的TFT阵列基板的截面结构示意图。
图2A为本申请第一实施例提供的TFT阵列基板的俯视图。
图2B为本申请第二实施例提供的TFT阵列基板的俯视图。
图3为本申请实施例提供的TFT阵列基板的制备方法流程图。
图4A-4E为本申请实施例提供的TFT阵列基板的制备方法的截面结构示意图。
具体实施方式
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述。显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。
在本申请的描述中,需要理解的是,术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本申请和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本申请的限制。此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中,“多个”的含义是两个或两个以上,除非另有明确具体的限定。
在本申请的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接或可以相互通讯;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语在本申请中的具体含义。
在本申请中,除非另有明确的规定和限定,第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触,也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且,第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方,或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方,或仅仅表示第一特征水平高度小于第二特征。
下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开,下文中对特定例子的部件和设置进行描述。当然,它们仅仅为示例,并且目的不在于限制本申请。此外,本申请可以在不同例子中重复参考数字和/或参考字母,这种重复是为了简化和清楚的目的,其本身不指示所讨论各种实施方式和/或设置之间的关系。此外,本申请提供了的各种特定的工艺和材料的例子,但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
本申请提供一种TFT阵列基板及制备方法,为使本申请的目的、技术方案及效果更加清楚、明确,以下参照附图并举实施例对本申请进一步详细说明。应当理解,此处所描述的具体实施例仅用以解释本申请,并不用于限定本申请。
本申请实施例针对现有的TFT阵列基板及制备方法,在进行清洁剂测试过程中喷洒的清洁剂药液流经绑定端子,由于绑定端子所在的焊接区防护较弱导致清洁剂侵入而产生腐蚀的技术问题,本实施例能够解决该缺陷。
如图1所示,为本申请实施例提供的TFT阵列基板的截面结构示意图。所述TFT阵列基板包括阵列驱动区以及位于所述阵列驱动区一侧的绑定区;其中,所述TFT阵列基板还包括柔性衬底20、设置于所述柔性衬底20上的缓冲层30、设置于所述缓冲层30上的第一金属层40以及覆盖所述第一金属层40的绝缘层50,所述绝缘层50上具有多个间隔排列的绑定端子60,多个所述绑定端子60位于所述绑定区,所述绝缘层50还具有与多个所述绑定端子60对应设置的多个过孔51,每一所述绑定端子60经由对应的所述过孔51与所述第一金属层40电连接;
其中,位于所述绑定区的部分所述绝缘层50上还设置有挡墙70,所述挡墙围绕多个所述绑定端子60排列形成的第一区域D设置。
具体地,所述柔性衬底20形成在刚性衬底10上,所述刚性衬底的材料优选为玻璃;所述柔性衬底20的材料可以为现有技术中常用于制作衬底的柔性材料,例如可以为聚酰亚胺。
具体地,所述TFT阵列基板位于所述阵列驱动区的部分还包括设置在所述第一金属层40上方且与所述第一金属层40绝缘的有源层及源漏极电极层、设于源漏极电极层上方且与源漏极电极层绝缘的透明导电电极层。所述绝缘层50由所述第一金属层40与有源层及源漏极电极层之间的绝缘结构层以及源漏极电极层与透明导电电极层之间的绝缘结构层层叠而成。
优选地,所述有源层可以采用氧化物半导体材料,例如,铟锌氧化物(IZO)、镓铟氧化物(IGO)、铟镓锌氧化物(IGZO)、铟镓锡氧化物(IGTO)、铟镓锌锡氧化物(IGZTO)等。所述有源层也可以采用例如,非晶硅、单晶硅、低温多晶硅等。
具体地,所述缓冲层30以及所述绝缘层50的材料为氮硅化物或者氮氧化物,所述第一金属层40的材料为铝或铜,所述第一金属层40用于制备薄膜晶体管的栅极。
如图2A所示,为本申请第一实施例提供的TFT阵列基板的俯视图。其中,所述挡墙70为将所述第一区域D四面包围后形成的一闭环图案。如图2B所示,为本申请第二实施例提供的TFT阵列基板的俯视图。其中,所述挡墙70为将所述第一区域D三面包围且未包围的一面靠近所述阵列驱动区的开环图案。
具体地,所述挡墙70为间隔物(Photo spacer)挡墙,所述间隔物挡墙的材料为有机色阻。所述挡墙70在加工时进行有机色阻涂布,同时对色阻进行曝光。通过光罩上在该位置设定特定地图案,以使经过曝光后该地方留下所述挡墙70的形状。
优选地,所述挡墙70的宽度为20~400um,所述挡墙70的高度为3~6um。但并不以此为限制,具体视公司产品而设计。
具体地,由图2A以及图2B可知,每一所述绑定端子60均包括一端部61及一走线62,每一所述绑定端子60中,所述走线62的一端连接所述端部61,另一端经对应的所述过孔51与所述第一金属层40电连接。优选地,多个所述端部61的形状均为矩形,多个所述端部61沿直线排列。当然,根据实际的产品需求,多个所述端部61也可以采用其他形状。
本发明的TFT阵列基板中,将间隔物(Photo spacer)挡墙设计为不同的形状对清洁剂进行阻挡,能够有效改善清洁剂侵入绑定端子后导致腐蚀不良,进一步提升产品性能。
基于同一发明构思,本发明还提供一种TFT阵列基板的制备方法。如图3所示,为本申请实施例提供的TFT阵列基板的制备方法流程图,所述方法具体包括:
S10,在一柔性衬底20上形成缓冲层30。
具体地,所述S10还包括:
首先,提供一刚性衬底10,在所述刚性衬底10上制备柔性衬底20;之后,在所述柔性衬底20上沉积第一层无机绝缘膜,形成缓冲层30。优选地,所述刚性衬底10例如可以为塑料基板或者玻璃基板。在本申请一实施方式中,所述柔性衬底20可以是聚酰亚胺基板。所述缓冲层30的材料优选为SiNx或SiOx,如图4A所示。
S20,在所述缓冲层30上沉积金属材料并进行图案化,形成第一金属层40。
具体地,所述S20还包括:
在所述缓冲层30上沉积一层金属薄膜,所述金属薄膜经图案化后形成第一金属层40。所述第一金属层40选自Mo金属层、Mo/Al/Mo金属层、Mo/Cu金属层、Ni/Cu/Ni金属层、MoTiNi/Cu/MoTiNi金属层、NiCr/Cu/NiCr金属层以及CuNb金属层中的任意一种。优选地,所述第一金属层40为铜或铝,如图4B所示。
S30,形成覆盖所述第一金属层40的绝缘层50,对所述绝缘层50进行图案化,形成多个间隔设置的过孔51。
具体地,所述S30还包括:
在所述第一金属层40上制备第二无机绝缘层,形成绝缘层50;之后,对所述绝缘层50进行图案化,形成多个间隔设置的过孔51。其中,所述绝缘层50膜层材料可为SiOx,SiNx,Al2O3/SiNx/SiOx,SiOx/SiNx/SiOx等,如图4C所示。
S40,在所述绝缘层50上形成多个间隔的绑定端子60,每一所述绑定端子60位于所述过孔51上方,并经由对应的所述过孔51与所述第一金属层40电连接。
具体地,所述S40还包括:
在所述绝缘层50上形成多个间隔的绑定端子60,每一所述绑定端子60位于所述过孔51上方,并经由对应的所述过孔51与所述第一金属层40电连接。其中,每一所述绑定端子60均包括一端部及一走线,每一所述绑定端子60中,所述走线的一端连接所述端部,另一端经对应的所述过孔51与所述第一金属层40电连接。优选地,多个所述端部的形状均为矩形,多个所述端部沿直线排列。当然,根据实际的产品需求,多个所述端部也可以采用其他形状,如图4D所示。
S50,在所述绝缘层50上涂布一有机色阻形成挡墙70,所述挡墙70围绕多个所述绑定端子60排列形成的第一区域D设置。
具体地,所述S50还包括:
在所述绝缘层50上涂布一有机色阻形成挡墙70。在本申请第一实施例中,所述挡墙70为将所述第一区域D四面包围后形成的一闭环图案。在本申请第二实施例中,所述挡墙70为将所述第一区域D三面包围且未包围的一面靠近所述阵列驱动区的开环图案。优选地,所述挡墙70为间隔物(Photo spacer)挡墙,所述间隔物挡墙的材料为有机色阻。所述挡墙70在加工时进行有机色阻涂布,同时对色阻进行曝光。通过光罩上在该位置设定特定地图案,以使经过曝光后该地方留下所述挡墙70的形状。优选地,所述挡墙70的宽度为20~400um,所述挡墙70的高度为3~6um。但并不以此为限制,具体视公司产品而设计,如图4E所示。
综上所述,本申请实施例所提供的TFT阵列基板及制备方法,在多个所述绑定端子排列形成的第一区域D外围设置挡墙,对清洁剂测试时侵入绑定端子的清洁剂药液进行阻挡,有效的防止绑定端子受到清洁剂侵袭导致的腐蚀不良,进一步提升了TFT阵列基板的产品性能。
在上述实施例中,对各个实施例的描述都各有侧重,某个实施例中没有详述的部分,可以参见其他实施例的相关描述。
以上对本申请实施例所提供的一种显示面板及制备方法进行了详细介绍,本文中应用了具体个例对本申请的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想;本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。
Claims (10)
1.一种TFT阵列基板,包括阵列驱动区以及位于所述阵列驱动区一侧的绑定区,其特征在于,所述TFT阵列基板还包括柔性衬底、设置于所述柔性衬底上的缓冲层、设置于所述缓冲层上的第一金属层以及覆盖所述第一金属层的绝缘层,所述绝缘层上具有多个间隔排列的绑定端子,多个所述绑定端子位于所述绑定区,所述绝缘层还具有与多个所述绑定端子对应设置的多个过孔,每一所述绑定端子经由对应的所述过孔与所述第一金属层电连接;
其中,位于所述绑定区的部分所述绝缘层上还设置有挡墙,所述挡墙围绕多个所述绑定端子排列形成的第一区域D设置。
2.根据权利要求1所述的TFT阵列基板,其特征在于,所述挡墙为将所述第一区域D四面包围后形成的一闭环图案。
3.根据权利要求1所述的TFT阵列基板,其特征在于,所述挡墙为将所述第一区域D三面包围且未包围的一面靠近所述阵列驱动区的开环图案。
4.根据权利要求2或3所述的TFT阵列基板,其特征在于,所述挡墙为间隔物挡墙,所述间隔物挡墙的材料为有机色阻。
5.根据权利要求4所述的TFT阵列基板,其特征在于,所述挡墙的宽度为20~400um,所述挡墙的高度为3~6um。
6.根据权利要求1所述的TFT阵列基板,其特征在于,每一所述绑定端子均包括一端部及一走线,每一所述绑定端子中,所述走线的一端连接所述端部,另一端经对应的所述过孔与所述第一金属层电连接。
7.根据权利要求6所述的TFT阵列基板,其特征在于,多个所述端部的形状均为矩形,多个所述端部沿直线排列。
8.根据权利要求1所述的TFT阵列基板,其特征在于,所述柔性衬底的材料为聚酰亚胺,所述缓冲层以及所述绝缘层的材料为氮硅化物或者氮氧化物,所述第一金属层的材料为铝或铜。
9.一种如权利要求1-8所述TFT阵列基板的制备方法,其特征在于,所述方法包括:
S10,在一柔性衬底上形成缓冲层;
S20,在所述缓冲层上沉积金属材料并进行图案化,形成第一金属层;
S30,形成覆盖所述第一金属层的绝缘层,对所述绝缘层进行图案化,形成多个间隔设置的过孔;
S40,在所述绝缘层上形成多个间隔的绑定端子,每一所述绑定端子位于所述过孔上方,并经由对应的所述过孔与所述第一金属层电连接;
S50,在所述绝缘层上涂布一有机色阻形成挡墙,所述挡墙围绕多个所述绑定端子排列形成的第一区域D设置。
10.根据权利要求9所述的TFT阵列基板的制备方法,其特征在于,所述所述挡墙的宽度为20~400um,所述挡墙的高度为3~6um。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110002999.3A CN112820739B (zh) | 2021-01-04 | 2021-01-04 | Tft阵列基板及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110002999.3A CN112820739B (zh) | 2021-01-04 | 2021-01-04 | Tft阵列基板及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN112820739A true CN112820739A (zh) | 2021-05-18 |
CN112820739B CN112820739B (zh) | 2022-07-12 |
Family
ID=75856933
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110002999.3A Active CN112820739B (zh) | 2021-01-04 | 2021-01-04 | Tft阵列基板及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN112820739B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114185210A (zh) * | 2021-12-03 | 2022-03-15 | 武汉华星光电技术有限公司 | 阵列基板及显示面板 |
CN114335087A (zh) * | 2021-12-17 | 2022-04-12 | 武汉华星光电半导体显示技术有限公司 | 显示面板及移动终端 |
WO2023077543A1 (zh) * | 2021-11-02 | 2023-05-11 | 武汉华星光电半导体显示技术有限公司 | 显示面板和显示装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108663865A (zh) * | 2018-07-24 | 2018-10-16 | 武汉华星光电技术有限公司 | Tft阵列基板及其制造方法与柔性液晶显示面板 |
CN108874256A (zh) * | 2018-06-29 | 2018-11-23 | 武汉天马微电子有限公司 | 显示面板和显示装置 |
CN109698160A (zh) * | 2018-12-27 | 2019-04-30 | 厦门天马微电子有限公司 | 阵列基板及其制作方法、显示面板、显示装置 |
-
2021
- 2021-01-04 CN CN202110002999.3A patent/CN112820739B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108874256A (zh) * | 2018-06-29 | 2018-11-23 | 武汉天马微电子有限公司 | 显示面板和显示装置 |
CN108663865A (zh) * | 2018-07-24 | 2018-10-16 | 武汉华星光电技术有限公司 | Tft阵列基板及其制造方法与柔性液晶显示面板 |
CN109698160A (zh) * | 2018-12-27 | 2019-04-30 | 厦门天马微电子有限公司 | 阵列基板及其制作方法、显示面板、显示装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023077543A1 (zh) * | 2021-11-02 | 2023-05-11 | 武汉华星光电半导体显示技术有限公司 | 显示面板和显示装置 |
CN114185210A (zh) * | 2021-12-03 | 2022-03-15 | 武汉华星光电技术有限公司 | 阵列基板及显示面板 |
CN114335087A (zh) * | 2021-12-17 | 2022-04-12 | 武汉华星光电半导体显示技术有限公司 | 显示面板及移动终端 |
CN114335087B (zh) * | 2021-12-17 | 2022-11-08 | 武汉华星光电半导体显示技术有限公司 | 显示面板及移动终端 |
WO2023108726A1 (zh) * | 2021-12-17 | 2023-06-22 | 武汉华星光电半导体显示技术有限公司 | 显示面板及移动终端 |
Also Published As
Publication number | Publication date |
---|---|
CN112820739B (zh) | 2022-07-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN112820739B (zh) | Tft阵列基板及其制备方法 | |
US8405811B2 (en) | Liquid crystal display and method of manufacturing the same | |
US9524992B2 (en) | Thin film transistor array panel and manufacturing method thereof | |
KR101747391B1 (ko) | 액정표시장치용 어레이 기판 및 이의 제조 방법 | |
US7811870B2 (en) | Array substrate for liquid crystal display device and fabrication method thereof | |
US8324003B2 (en) | Method for manufacturing a thin film transistor array panel | |
US9064752B2 (en) | Array substrate for liquid crystal display having gate line, gate electrode and data pattern in at least two trenches and method of fabricating the same | |
KR20120067288A (ko) | 액정 표시 장치 | |
US7053972B2 (en) | Chip-on-glass array substrate of liquid crystal display device and method of fabricating the same | |
US9741748B2 (en) | Thin film transistor array panel and manufacturing method thereof | |
KR20070103810A (ko) | 유기 반도체물질을 이용한 액정표시장치용 어레이 기판 및그 제조 방법 | |
US9360695B2 (en) | Liquid crystal display | |
US9761614B2 (en) | Thin film transistor array panel and manufacturing method thereof | |
US6791651B2 (en) | Array substrate for IPS mode liquid crystal display device and fabricating method for the same | |
EP1903609A2 (en) | Method for manufacturing a thin film transistor array panel | |
KR20070009013A (ko) | 평판표시장치 및 평판표시장치의 제조방법 | |
US20070052908A1 (en) | Liquid crystal display and method for manufacturing the same | |
US6961101B2 (en) | Copper alloy, array substrate of liquid crystal display using the same and method of fabricating the same | |
KR101978789B1 (ko) | 표시장치용 어레이 기판 및 그의 제조 방법 | |
KR20080057877A (ko) | 어레이 기판 및 그 제조방법 | |
KR101198219B1 (ko) | 액정표시장치용 어레이 기판 및 그 제조방법 | |
KR20070017710A (ko) | 액정 표시 장치, 이를 위한 표시판 및 그 제조 방법 | |
KR101377673B1 (ko) | 액정표시장치용 어레이 기판 및 그 제조방법 | |
KR101066484B1 (ko) | 액정표시소자의 제조방법 | |
KR100631369B1 (ko) | 액정표시장치용 어레이패널 및 그의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |