CN112802959A - Magnetic tunnel junction structure and magnetic random access memory - Google Patents
Magnetic tunnel junction structure and magnetic random access memory Download PDFInfo
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 70
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 42
- 229910052735 hafnium Inorganic materials 0.000 claims description 39
- 229910052750 molybdenum Inorganic materials 0.000 claims description 38
- 229910052715 tantalum Inorganic materials 0.000 claims description 37
- 239000010936 titanium Substances 0.000 claims description 37
- 229910052804 chromium Inorganic materials 0.000 claims description 36
- 239000011651 chromium Substances 0.000 claims description 36
- 229910019236 CoFeB Inorganic materials 0.000 claims description 35
- 229910052758 niobium Inorganic materials 0.000 claims description 34
- 239000010955 niobium Substances 0.000 claims description 34
- 229910052719 titanium Inorganic materials 0.000 claims description 33
- 229910052720 vanadium Inorganic materials 0.000 claims description 31
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 29
- 229910052726 zirconium Inorganic materials 0.000 claims description 27
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 26
- 229910052706 scandium Inorganic materials 0.000 claims description 24
- 229910052707 ruthenium Inorganic materials 0.000 claims description 21
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 16
- 230000005294 ferromagnetic effect Effects 0.000 claims description 16
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 14
- 239000010937 tungsten Substances 0.000 claims description 14
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 13
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 13
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 12
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 12
- 229910044991 metal oxide Inorganic materials 0.000 claims description 12
- 150000004706 metal oxides Chemical class 0.000 claims description 12
- 239000011733 molybdenum Substances 0.000 claims description 12
- 229910052697 platinum Inorganic materials 0.000 claims description 12
- 239000011777 magnesium Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 229910052742 iron Inorganic materials 0.000 claims description 10
- 229910052749 magnesium Inorganic materials 0.000 claims description 10
- -1 HfOx Inorganic materials 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 229910052741 iridium Inorganic materials 0.000 claims description 9
- 239000002131 composite material Substances 0.000 claims description 8
- 230000005415 magnetization Effects 0.000 claims description 8
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052791 calcium Inorganic materials 0.000 claims description 7
- 239000011575 calcium Substances 0.000 claims description 7
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 7
- 229910017107 AlOx Inorganic materials 0.000 claims description 6
- 229910019923 CrOx Inorganic materials 0.000 claims description 6
- 229910016553 CuOx Inorganic materials 0.000 claims description 6
- 229910015711 MoOx Inorganic materials 0.000 claims description 6
- 229910003070 TaOx Inorganic materials 0.000 claims description 6
- 239000013598 vector Substances 0.000 claims description 6
- 229910003134 ZrOx Inorganic materials 0.000 claims description 5
- 229910003321 CoFe Inorganic materials 0.000 claims description 4
- 230000009471 action Effects 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- 238000005192 partition Methods 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 3
- 230000001590 oxidative effect Effects 0.000 claims 1
- 230000001965 increasing effect Effects 0.000 abstract description 6
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 230000005611 electricity Effects 0.000 abstract description 3
- 230000006872 improvement Effects 0.000 abstract description 3
- 230000005389 magnetism Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 153
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 9
- 229910017052 cobalt Inorganic materials 0.000 description 8
- 239000010941 cobalt Substances 0.000 description 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 8
- 239000000395 magnesium oxide Substances 0.000 description 8
- 229910052703 rhodium Inorganic materials 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000014759 maintenance of location Effects 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910002546 FeCo Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- ZDZZPLGHBXACDA-UHFFFAOYSA-N [B].[Fe].[Co] Chemical compound [B].[Fe].[Co] ZDZZPLGHBXACDA-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000005347 demagnetization Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910000521 B alloy Inorganic materials 0.000 description 1
- 229910019791 Mg3B2 Inorganic materials 0.000 description 1
- 229910026161 MgAl2O4 Inorganic materials 0.000 description 1
- WRSVIZQEENMKOC-UHFFFAOYSA-N [B].[Co].[Co].[Co] Chemical compound [B].[Co].[Co].[Co] WRSVIZQEENMKOC-UHFFFAOYSA-N 0.000 description 1
- MHIHMSLBLJXMFH-UHFFFAOYSA-N [C].[Fe].[Co] Chemical compound [C].[Fe].[Co] MHIHMSLBLJXMFH-UHFFFAOYSA-N 0.000 description 1
- QVYYOKWPCQYKEY-UHFFFAOYSA-N [Fe].[Co] Chemical compound [Fe].[Co] QVYYOKWPCQYKEY-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- ZDVYABSQRRRIOJ-UHFFFAOYSA-N boron;iron Chemical compound [Fe]#B ZDVYABSQRRRIOJ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
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- Hall/Mr Elements (AREA)
Abstract
The magnetic tunnel junction structure comprises a free layer with a multilayer structure, and two vertical anisotropy enhancement layers formed by nonmagnetic metal, oxide thereof and/or incomplete oxide are arranged between three free sublayers. The application provides two interfaces with strong vertical anisotropy for each free layer through the arrangement of two vertical anisotropy enhancement layers, thereby increasing the thermal stability. The method is very beneficial to the improvement of magnetism, electricity and yield of the magnetic random access memory and the further miniaturization of the device.
Description
Technical Field
The present invention relates to the field of memory technologies, and in particular, to a magnetic tunnel junction structure and a magnetic random access memory.
Background
Magnetic Random Access Memory (MRAM) in a Magnetic Tunnel Junction (MTJ) having Perpendicular Anisotropy (PMA), as a free layer for storing information, has two magnetization directions in a vertical direction, that is: upward and downward, respectively corresponding to "0" and "1" or "1" and "0" in binary, in practical application, the magnetization direction of the free layer will remain unchanged when reading information or leaving empty; during writing, if a signal different from the existing state is input, the magnetization direction of the free layer will be flipped by one hundred and eighty degrees in the vertical direction. The ability of the magnetization direction of the free layer of the magnetic random access Memory to remain unchanged is called data retention capability or thermal stability, and is required to be different in different application situations, for a typical Non-volatile Memory (NVM), for example: the method is applied to the field of automotive electronics, the requirement of data storage capacity is that the data can be stored for at least ten years at 125 ℃ or even 150 ℃, and the data retention capacity or the thermal stability is reduced when external magnetic field overturning, thermal disturbance, current disturbance or reading and writing are carried out for multiple times.
In order to increase the storage density of MRAM, the Critical Dimension (CD) of the magnetic tunnel junction is becoming smaller in recent years. As the dimensions are further reduced, a drastic deterioration in the thermal stability factor of the magnetic tunnel junction is observed. In order to increase the thermal stability factor of the ultra-small MRAM cell device, the effective perpendicular anisotropy energy density may be increased by reducing the thickness of the free layer, adding or changing the free layer into a material with a low saturation magnetic susceptibility, and so on, thereby maintaining a higher thermal stability factor, but the Tunneling Magnetoresistance Ratio (TMR) of the magnetic Tunnel junction may be reduced, thereby increasing the error rate of the memory read operation.
Disclosure of Invention
In order to solve the above-mentioned problems, an object of the present invention is to provide a magnetic tunnel junction structure and a magnetic random access memory having a structural design in which a plurality of free sublayers are combined with a plurality of perpendicular anisotropy enhancing layers.
The purpose of the application and the technical problem to be solved are realized by adopting the following technical scheme.
According to the present application, a magnetic tunnel junction structure includes, from top to bottom, a Capping Layer (CL), a Free Layer (FL), a Barrier Layer (TBL), a Reference Layer (RL), a lattice Breaking Layer (CBL), an antiferromagnetic Anti-ferromagnetic Layer (SyAF), and a Seed Layer (Seed Layer; SL), wherein the Free Layer includes: the first free sublayer is arranged on the barrier layer and is formed by ferromagnetic metal or alloy thereof; a first perpendicular anisotropy enhancement layer, disposed on the first free sublayer, being a multilayer combination formed of a non-magnetic metal layer, an oxide layer thereof, an incomplete oxide layer thereof, or a combination thereof; a second free sublayer disposed on the first perpendicular anisotropy enhancement layer and formed of a ferromagnetic metal or an alloy thereof; a second perpendicular anisotropy enhancement layer disposed on the second free sublayer and formed of a multilayer combination of a non-magnetic metal layer, an oxide layer thereof, an incomplete oxide layer thereof, or a combination thereof; a third free sublayer disposed on the second perpendicular anisotropy enhancement layer and formed of a ferromagnetic metal or an alloy thereof; wherein the first and second perpendicular anisotropy enhancement layers respectively provide the free layer with two interfaces having strong perpendicular anisotropy; the magnetization vectors of the first free sublayer, the second free sublayer and the third free sublayer always present a parallel state under the action of the first perpendicular anisotropy enhancement layer and the second perpendicular anisotropy enhancement layer.
The technical problem solved by the application can be further realized by adopting the following technical measures.
In an embodiment of the present application, the total thickness of the first free sub-layer is 1.2nm to 2.5nm, and the composition material is FeB/(Sc, Ti, V, Cr, Zr, Nb, Hf, Ta, W or Mo)/CoFeB, CoFeB/(Sc, Ti, V, Cr, Zr, Nb, Hf, Ta, W or Mo)/CoFeB, Fe/FeB/(Sc, Ti, V, Cr, Zr, Nb, Hf, Ta, W or Mo)/CoFeB or Fe/CoFeB/(Sc, Ti, V, Cr, Zr, Nb, Hf, Ta, W or Mo)/CoFeB.
In an embodiment of the present application, the material of the first and second vertical anisotropy enhancing layers is a multilayer combination of metal layers W, Mo, Ta, Hf, Zr, Nb, Cr, Mg, Cu, Al or their oxide layers WOx, MoOx, TaOx, HfOx, ZrOx, NbOx, CrOx, MgO, CuOx, AlOx, or their incomplete oxide composite layers W-WOx, Mo-MoOx, Ta-TaOx, Hf-HfOx, Zr-ZrOx, Nb-NbOx, Cr-CrOx, Mg-MgO, Cu-CuOx, Al-AlOx, or their combinations, and the thickness ranges from 0.15 to 0.5 nm.
In an embodiment of the present application, the incomplete oxide composite layer is a metal layer and a discontinuous oxide layer thereon, and the manufacturing method may be to oxidize a surface of a metal layer sputtered first, so that the formed oxide is island-shaped, i.e., the discontinuous metal layer is covered.
In an embodiment of the present application, the total thickness of the second free sub-layer is 0.6nm to 2.1nm, and the material is CoFeB/(Sc, Ti, V, Cr, Zr, Nb, Hf, Ta, W, or Mo)/CoFeB, CoB/(Sc, Ti, V, Cr, Zr, Nb, Hf, Ta, W, or Mo)/CoB, CoBM, or CoFeBM, where M is Sc, Ti, V, Cr, Zr, Nb, Hf, Ta, W, Mo, or a combination thereof, and the ratio thereof is not more than 10%.
In an embodiment of the present application, the total thickness of the third free sublayer is 0.4nm to 1.5nm, and the material of the third free sublayer is Co, Fe, CoFe, CoB, FeB, CoFeB, CoBM, FeBM or CoFeBM, where M is Sc, Ti, V, Cr, Zr, Nb, Hf, Ta, W, Mo or a combination thereof, and the ratio thereof is not more than 10%.
In an embodiment of the present application, a plasma post-treatment process is performed on the surface of the third free sublayer after the third free sublayer is fabricated.
In an embodiment of the present application, the cover layer includes a double-layer structure of a first cover sub-layer and a second cover sub-layer; the first covering sublayer is made of metal oxide, the material of the first covering sublayer is made of metal oxide of iron, tungsten, zinc, aluminum, copper, calcium, titanium, vanadium, chromium, molybdenum, magnesium, niobium, ruthenium, hafnium, platinum and the like or a multi-layer metal oxide material of combination of the metal oxide and the like, and the thickness of the first covering sublayer is 0 nm-0.6 nm; the second covering layer is made of non-ferromagnetic metal, the material of the second covering layer is made of multilayer materials of tungsten, zinc, aluminum, copper, calcium, titanium, vanadium, chromium, molybdenum, magnesium, niobium, ruthenium, hafnium, platinum or the combination of the materials, the second covering layer is optimized to be made of ruthenium or/and iridium, and the total thickness of the second covering layer is 0.5 nm-10.0 nm.
It is another objective of the present invention to provide a magnetic random access memory, wherein the storage unit comprises any one of the foregoing magnetic tunnel junction structures, a top electrode disposed above the magnetic tunnel junction structure, and a bottom electrode disposed below the magnetic tunnel junction structure.
In an embodiment of the present application, an annealing operation is performed at a temperature of not less than 350 ℃ for at least 30 minutes after the bottom electrode, seed layer, antiferromagnetic layer, lattice partition layer, reference layer, barrier layer, free layer, capping layer, and top electrode are deposited.
The application provides two interfaces with strong vertical anisotropy for each free layer through the arrangement of two vertical anisotropy enhancement layers, thereby increasing the thermal stability. The method is very beneficial to the improvement of magnetism, electricity and yield of the magnetic random access memory and the further miniaturization of the device.
Drawings
FIG. 1 is a diagram illustrating an exemplary MRAM cell structure;
FIGS. 2a and 2b are schematic diagrams of a magnetic tunnel junction structure and a magnetic moment vector of a free layer according to an embodiment of the present invention.
Detailed Description
Refer to the drawings wherein like reference numbers refer to like elements throughout. The following description is based on illustrated embodiments of the application and should not be taken as limiting the application with respect to other embodiments that are not detailed herein.
The following description of the various embodiments refers to the accompanying drawings, which illustrate specific embodiments that can be used to practice the present application. In the present application, directional terms such as "up", "down", "front", "back", "left", "right", "inner", "outer", "side", and the like are merely referring to the directions of the attached drawings. Accordingly, the directional terminology is used for purposes of illustration and understanding, and is in no way limiting.
The terms "first," "second," "third," and the like in the description and in the claims of the present application and in the above-described drawings, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It should be understood that the objects so described are interchangeable under appropriate circumstances. Furthermore, the terms "comprising" and "having," as well as variations thereof, such as, for example, are intended to cover non-exclusive inclusions.
The terminology used in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the concepts of the present application. Unless the context clearly dictates otherwise, expressions used in the singular form encompass expressions in the plural form. In the present specification, it will be understood that terms such as "including," "having," and "containing" are intended to specify the presence of the features, integers, steps, acts, or combinations thereof disclosed in the specification, and are not intended to preclude the presence or addition of one or more other features, integers, steps, acts, or combinations thereof. Like reference symbols in the various drawings indicate like elements.
The drawings and description are to be regarded as illustrative in nature, and not as restrictive. In the drawings, elements having similar structures are denoted by the same reference numerals. In addition, the size and thickness of each component shown in the drawings are arbitrarily illustrated for understanding and ease of description, but the present application is not limited thereto.
In the drawings, the range of configurations of devices, systems, components, circuits is exaggerated for clarity, understanding, and ease of description. It will be understood that when an element is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present.
In addition, in the description, unless explicitly described to the contrary, the word "comprise" will be understood to mean that the recited components are included, but not to exclude any other components. Further, in the specification, "on.
To further illustrate the technical means and effects of the present invention adopted to achieve the predetermined objects, the following detailed description is given to a magnetic tunnel junction structure and a magnetic random access memory according to the present invention with reference to the accompanying drawings and specific embodiments.
FIG. 1 is a diagram of an exemplary MRAM cell structure. The magnetic memory cell structure includes a multi-layer structure formed by at least a Bottom Electrode (BE) 10, a Magnetic Tunnel Junction (MTJ)20, and a Top Electrode (Top Electrode) 30.
In some embodiments, the bottom electrode 10 is titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), ruthenium (Ru), tungsten (W), tungsten nitride (WN), or combinations thereof; the top electrode 30 is made of titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), tungsten (W), tungsten nitride (WN), or a combination thereof. The magnetic memory cell structure is typically implemented by Physical Vapor Deposition (PVD), and is typically planarized after the bottom electrode 10 is deposited to achieve surface flatness for the magnetic tunnel junction 20.
In some embodiments, the magnetic tunnel junction 20 includes, from top to bottom, a Capping Layer (CL) 27, a Free Layer (FL) 26, a Barrier Layer (Tunnel Barrier, TBL)25, a Reference Layer (RL) 24, a lattice Breaking Layer (CBL) 23, an antiferromagnetic Anti-ferromagnetic Layer (SyAF) 22, and a Seed Layer (Seed Layer; SL) 21.
As shown in fig. 1, in some embodiments, the free layer 26 is composed of a single or multi-layer structure of CoFeB, FeCo/CoFeB, or CoFeB/(Ta, W, Mo, or Hf)/CoFeB. Among them, the Data Retention capability (Data Retention) can be calculated by the following formula:
wherein τ is in the thermal disturbance stripTime of invariance of magnetization vector under the element, tau0For the trial time (typically 1ns), E is the energy barrier of the free layer, kBBoltzmann constant, T is the operating temperature.
The Thermal Stability factor (Thermal Stability factor) can then be expressed as the following equation:
wherein, KeffIs the effective isotropic energy density of the free layer, V is the volume of the free layer, KVConstant of bulk anisotropy MsSaturation susceptibility of the free layer, demagnetization constant in the direction perpendicular to Nz, t thickness of the free layer, KiIs the interfacial anisotropy constant, DMTJThe critical dimension of the magnetic random access memory (generally referred to as the diameter of the free layer 26), AsFor stiffness integral exchange constant, DnThe size of the inverted nucleus (generally referred to as the diameter of the inverted nucleus) during free layer inversion. Experiments show that when the thickness of the free layer is thicker, the free layer shows in-plane anisotropy, and when the thickness of the free layer is thinner, the free layer shows vertical anisotropy, KVGenerally, the contribution of demagnetization energy to the vertical anisotropy is negative, so that the vertical anisotropy is completely derived from the interfacial effect Ki。
In addition, as the volume of the free layer 26 is reduced, the smaller the spin-polarized current that needs to be injected for a write or switching operation. Critical current I for write operationc0The relationship between the compound and the thermal stability is strongly related, and can be expressed as the following formula:
wherein alpha is a damping constant,
η is the spin polarizability, which is the approximate planck constant. While increasing thermal stability, it becomes exceptionally important to reduce the critical current.
FIGS. 2a and 2b are schematic diagrams of a magnetic tunnel junction structure and a magnetic moment vector of a free layer according to an embodiment of the present invention. The prior art also refers to fig. 1 to facilitate understanding.
As shown in fig. 2a and 2b, in an embodiment of the present invention, a magnetic tunnel junction structure 20 includes a Capping Layer (CL) 27, a Free Layer (FL) 26, a Barrier Layer (tunnel Barrier, TBL)25, a Reference Layer (RL) 24, a Crystal Barrier Layer (CBL) 23, an antiferromagnetic Anti-ferromagnetic Layer (SyAF) 22, and a Seed Layer (Seed Layer; SL)21 from top to bottom, wherein the Free Layer 26 includes: a first free sublayer 261 disposed on the barrier layer 25, the first free sublayer 261 being formed of a ferromagnetic metal or an alloy thereof; a first perpendicular anisotropy enhancement layer 262, disposed on the first free sublayer 261, and formed by a non-magnetic metal layer, an oxide layer thereof, an incomplete oxide layer thereof, or a multi-layer combination thereof; a second free sublayer 263 disposed on the first perpendicular anisotropy enhancement layer 262 and formed of a ferromagnetic metal or an alloy thereof; a second perpendicular anisotropy enhancement layer 264, disposed on the second free sublayer 263, and formed of a multi-layer combination of a non-magnetic metal layer, an oxide layer thereof, an incomplete oxide layer thereof, or a combination thereof; a third free sublayer 265 disposed on the second perpendicular anisotropy enhancement layer 264 and formed of a ferromagnetic metal or an alloy thereof; wherein the first and second perpendicular anisotropy enhancement layers 262 and 264, respectively, provide two interfaces with strong perpendicular anisotropy for each of the free layers 26; the magnetization vectors of the first free sublayer 261, the second free sublayer 263 and the third free sublayer 265 are always parallel to each other under the action of the first perpendicular anisotropy enhancement layer 262 and the second perpendicular anisotropy enhancement layer 264.
In an embodiment of the present application, the total thickness of the first free sub-layer 261 is 1.2nm to 2.5nm, and the composition material is FeB/(Sc, Ti, V, Cr, Zr, Nb, Hf, Ta, W or Mo)/CoFeB, CoFeB/(Sc, Ti, V, Cr, Zr, Nb, Hf, Ta, W or Mo)/CoFeB, Fe/FeB/(Sc, Ti, V, Cr, Zr, Nb, Hf, Ta, W or Mo)/CoFeB or Fe/CoFeB/(Sc, Ti, V, Cr, Zr, Nb, Hf, Ta, W or Mo)/CoFeB.
In an embodiment of the present application, the first and second vertical anisotropy enhancing layers 262 and 264 are formed of a material of a multi-layer combination of W, Mo, Ta, Hf, Zr, Nb, Cr, Mg, Cu, Al or their oxide layers WOx, MoOx, TaOx, HfOx, ZrOx, NbOx, CrOx, MgO, CuOx, AlOx, or their incomplete oxide composite layers W-WOx, Mo-MoOx, Ta-TaOx, Hf-HfOx, Zr-Ox, Nb-NbOx, Cr-CrOx, Mg-MgO, Cu-CuOx, Al-AlOx, or their combinations, and have a thickness ranging from 0.15 nm to 0.5 nm. The incomplete oxide composite layer is a metal layer and a discontinuous oxide layer on the metal layer, and the manufacturing method can be that the surface of the metal layer which is sputtered firstly is oxidized, and the formed oxide is island-shaped, namely the metal layer is covered discontinuously.
In some embodiments, the total thickness of the second free sublayer 263 is 0.6nm to 2.1nm, and is formed of CoFeB/(Sc, Ti, V, Cr, Zr, Nb, Hf, Ta, W or Mo)/CoFeB, CoB/(Sc, Ti, V, Cr, Zr, Nb, Hf, Ta, W or Mo)/CoB, CoBM or CoFeBM, where M is Sc, Ti, V, Cr, Zr, Nb, Hf, Ta, W, Mo or a combination thereof, and the ratio thereof is not more than 10%.
In an embodiment of the present application, the total thickness of the third free sub-layer 265 is 0.4nm to 1.5nm, and the material is Co, Fe, CoFe, CoB, FeB, CoFeB, CoBM, FeBM or CoFeBM, where M is Sc, Ti, V, Cr, Zr, Nb, Hf, Ta, W, Mo or a combination thereof, and the ratio thereof is not more than 10%.
In an embodiment of the present application, the surface of the third free sub-layer 265 is subjected to a plasma post-treatment process after the fabrication thereof is completed.
In an embodiment of the present application, the cover layer 27 comprises a double-layer structure of a first cover sub-layer and a second cover sub-layer; the first covering sublayer is made of metal oxide, the material of the first covering sublayer is made of metal oxide of iron, tungsten, zinc, aluminum, copper, calcium, titanium, vanadium, chromium, molybdenum, magnesium, niobium, ruthenium, hafnium, platinum and the like or a multi-layer metal oxide material of combination of the metal oxide and the like, and the thickness of the first covering sublayer is 0 nm-0.6 nm; the second covering layer is made of non-ferromagnetic metal, the material of the second covering layer is made of multilayer materials of tungsten, zinc, aluminum, copper, calcium, titanium, vanadium, chromium, molybdenum, magnesium, niobium, ruthenium, hafnium, platinum or the combination of the materials, the second covering layer is optimized to be made of ruthenium or/and iridium, and the total thickness of the second covering layer is 0.5 nm-10.0 nm.
Referring to fig. 2a to 2b, in an embodiment of the present invention, a memory cell of a magnetic random access memory includes any one of the above-described magnetic tunnel junction 20 structures, a top electrode 30 disposed above the magnetic tunnel junction 20 structure, and a bottom electrode 10 disposed below the magnetic tunnel junction 20 structure.
In an embodiment of the present application, the material of the seed layer 21 of the magnetic tunnel junction 20 is one or a combination of Ti, TiN, Ta, TaN, W, WN, Ru, Pt, Cr, CrCo, Ni, CrNi, CoB, FeB, CoFeB, etc. selected from Ti, TiN, Ta, TaN, W, WN, Ru, Pt, Cr, CrCo, Ni, CoFeB, and CoFeB. In some embodiments, the seed layer 21 may be selected from one of tantalum Ta/ruthenium Ru, tantalum Ta/platinum Pt/ruthenium Ru, and the like.
The antiferromagnetic layer 22, formally known as an antiparallel ferromagnetic super-lattice (Anti-Parallel ferromagnetic super-lattice) layer 22, is also known as a Synthetic antiferromagnetic (Synthetic Anti-ferromagnetic, SyAF) layer. Typically from [ cobalt Co/platinum Pt ]]nCo/(Ru, Ir, Rh) and Co/Pt]nCo/(Ru, Ir, Rh)/(Co, Co [ Co/Pt ] Co]m) [ cobalt Co/palladium Pd ]]nCo/(Ru, Ir, Rh) and Co/Pt]nCo/(Ru, Ir, Rh)/(Co, Co [ Co/Pt ] Co]m) [ cobalt Co/nickel Ni ]]nCo/(Ru, Ir, Rh) or [ Co/Ni ]]nCo/(Ru, Ir, Rh)/(Co, Co [ Ni/Co ]]m) A superlattice composition, wherein n>m.gtoreq.0, preferably, the monolayer thickness of cobalt (Co) and platinum (Pt) is below 0.5nm, such as: 0.10 nm, 0.15 nm, 0.20 nm, 0.25 nm, 0.30 nm, 0.35 nm, 0.40 nm, 0.45 nm, or 0.50 nm …. In some embodiments, the thickness of each layer structure of the antiferromagnetic layer 22 is the same or different.The antiferromagnetic layer 22 has a strong perpendicular anisotropy (PMA).
In one embodiment of the present application, the reference layer 24 has a magnetic polarization invariance under ferromagnetic coupling of the antiferromagnetic layer 22. The reference layer 24 is made of one or a combination of cobalt Co, iron Fe, nickel Ni, cobalt ferrite CoFe, cobalt boride CoB, iron boride FeB, cobalt iron carbon CoFeC, and cobalt iron boron alloy CoFeB, and the thickness of the reference layer 24 is between 0.5nm and 1.5 nm.
Since the antiferromagnetic layer 22 has a Face Centered Cubic (FCC) crystal structure and the reference layer 24 has a Body Centered Cubic (BCC) crystal structure, the lattices are not matched, in order to realize the transition and ferromagnetic coupling from the antiferromagnetic layer 22 to the reference layer 24, a lattice-blocking layer 23 is typically added between two layers of materials, the material of the lattice-blocking layer 23 is one or a combination of tantalum Ta, tungsten W, molybdenum Mo, hafnium Hf, iron Fe, cobalt Co, including but not limited to cobalt Co (tantalum Ta, tungsten W, molybdenum Mo, or hafnium Hf), iron Fe (tantalum Ta, tungsten W, molybdenum Mo, or hafnium Hf), iron cobalt FeCo (tantalum Ta, tungsten W, molybdenum Mo, or hafnium Hf), or iron cobalt boron FeCoB (tantalum, tungsten W, molybdenum Mo, or hafnium Hf), and the thickness of the lattice-blocking layer 23 is 0.1 nm to 0.5 nm.
In some embodiments, barrier layer 25 is formed of a non-magnetic metal oxide having a thickness between 0.6nm and 1.5nm, including magnesium oxide MgO, magnesium zinc oxide MgZnO, zinc oxide ZnO, aluminum oxide Al2O3MgN, Mg boron oxide, Mg3B2O6Or MgAl2O4. Preferably, magnesium oxide MgO may be used.
In one embodiment of the present application, after all the film layers are deposited, an annealing process is performed on the magnetic tunnel junction 20 at a temperature not less than 350 ℃ for at least 30 minutes to change the reference layer 24, the first free sublayer 26a, and the second free sublayer 26b from an amorphous phase to a Body Centered Cubic (BCC) crystal structure under the template action of the NaCl type FCC (001) barrier layer 25.
The application provides two interfaces with strong vertical anisotropy for each free layer through the arrangement of two vertical anisotropy enhancement layers, thereby increasing the thermal stability. The method is very beneficial to the improvement of magnetism, electricity and yield of the magnetic random access memory and the further miniaturization of the device.
The terms "in one embodiment of the present application" and "in various embodiments" are used repeatedly. This phrase generally does not refer to the same embodiment; it may also refer to the same embodiment. The terms "comprising," "having," and "including" are synonymous, unless the context dictates otherwise.
Although the present application has been described with reference to specific embodiments, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the application, and all changes, substitutions and alterations that fall within the spirit and scope of the application are to be understood as being covered by the following claims.
Claims (9)
1. The utility model provides a magnetic tunnel junction structure of magnetic random access memory sets up in the magnetic random access memory unit, the magnetic tunnel junction from top to bottom structure includes overburden, free layer, barrier layer, reference layer, lattice partition layer, anti-ferromagnetic layer and seed layer, its characterized in that, the free layer includes:
the first free sublayer is arranged on the barrier layer and is formed by ferromagnetic metal or alloy thereof;
a first perpendicular anisotropy enhancement layer, disposed on the first free sublayer, being a multilayer combination formed of a non-magnetic metal layer, an oxide layer thereof, an incomplete oxide layer thereof, or a combination thereof;
a second free sublayer disposed on the first perpendicular anisotropy enhancement layer and formed of a ferromagnetic metal or an alloy thereof;
a second perpendicular anisotropy enhancement layer disposed on the second free sublayer and formed of a multilayer combination of a non-magnetic metal layer, an oxide layer thereof, an incomplete oxide layer thereof, or a combination thereof;
a third free sublayer disposed on the second perpendicular anisotropy enhancement layer and formed of a ferromagnetic metal or an alloy thereof;
wherein the first and second perpendicular anisotropy enhancement layers respectively provide the free layer with two interfaces having strong perpendicular anisotropy; the magnetization vectors of the first free sublayer, the second free sublayer and the third free sublayer always present a parallel state under the action of the first perpendicular anisotropy enhancement layer and the second perpendicular anisotropy enhancement layer.
2. The magnetic tunnel junction structure of claim 1 wherein the first free sublayer has a total thickness of 1.2nm to 2.5nm and is composed of FeB/(Sc, Ti, V, Cr, Zr, Nb, Hf, Ta, W or Mo)/CoFeB, CoFeB/(Sc, Ti, V, Cr, Zr, Nb, Hf, Ta, W or Mo)/CoFeB, Fe/FeB/(Sc, Ti, V, Cr, Zr, Nb, Hf, Ta, W or Mo)/CoFeB or Fe/CoFeB/(Sc, Ti, V, Cr, Zr, Nb, Hf, Ta, W or Mo)/CoFeB.
3. The magnetic tunnel junction structure of magnetic random access memory of claim 1 wherein the material of the first and second perpendicular anisotropy enhancement layers is a multilayer combination of W, Mo, Ta, Hf, Zr, Nb, Cr, Mg, Cu, Al or their oxide layers WOx, MoOx, TaOx, HfOx, ZrOx, NbOx, CrOx, MgO, CuOx, AlOx, or their incomplete oxide composite layers W-WOx, Mo-MoOx, Ta-TaOx, Hf-HfOx, Zr-ZrOx, Nb-NbOx, Cr-CrOx, Mg-MgO, Cu-CuOx, Al-AlOx, or their combinations, and the thickness ranges from 0.15 to 0.5 nm.
4. The magnetic tunnel junction structure of claim 3 wherein the incomplete oxide composite layer is a metal layer and a discontinuous oxide layer thereon, and the method comprises oxidizing a surface of the metal layer sputtered first to form an island-shaped oxide, i.e., a discontinuous covering metal layer.
5. The magnetic tunnel junction structure of magnetic random access memory of claim 1 wherein the total thickness of the second free sublayer is 0.6nm to 2.1nm and is formed of a material selected from the group consisting of CoFeB/(Sc, Ti, V, Cr, Zr, Nb, Hf, Ta, W or Mo)/CoFeB, CoB/(Sc, Ti, V, Cr, Zr, Nb, Hf, Ta, W or Mo)/CoB, CoBM and CoFeBM, wherein M is Sc, Ti, V, Cr, Zr, Nb, Hf, Ta, W, Mo or combinations thereof, and wherein the ratio of M is no more than 10%.
6. The magnetic tunnel junction structure of the magnetic random access memory of claim 1 wherein the third free sublayer has a total thickness of 0.4nm to 1.5nm and is formed of a material selected from the group consisting of Co, Fe, CoFe, CoB, FeB, CoFeB, CoBM, FeBM and CoFeBM, wherein M is Sc, Ti, V, Cr, Zr, Nb, Hf, Ta, W, Mo and combinations thereof in a proportion of no more than 10%.
7. The magnetic tunnel junction structure of claim 1 wherein the surface of the third free sublayer is subjected to a plasma post-treatment process after the third free sublayer is formed.
8. The magnetic tunnel junction structure of claim 1 wherein the capping layer comprises a bilayer structure of a first capping sublayer and a second capping sublayer; the first covering sublayer is made of metal oxides, the metal oxides are made of iron, tungsten, zinc, aluminum, copper, calcium, titanium, vanadium, chromium, molybdenum, magnesium, niobium, ruthenium, hafnium, platinum or a multi-layer metal oxide material of the combination of the iron, tungsten, zinc, aluminum, copper, calcium, titanium, vanadium, chromium, molybdenum, magnesium, niobium, ruthenium, hafnium and platinum, and the thickness of the first covering sublayer is 0-0.6 nm; the second covering layer is made of non-ferromagnetic metal, the material of the second covering layer is made of multilayer materials of tungsten, zinc, aluminum, copper, calcium, titanium, vanadium, chromium, molybdenum, magnesium, niobium, ruthenium, hafnium, platinum or the combination of the materials, the second covering layer is optimized to be made of ruthenium or/and iridium, and the total thickness of the second covering layer is 0.5 nm-10.0 nm.
9. A magnetic random access memory comprising the magnetic tunnel junction structure of any of claims 1-8, a top electrode disposed above the magnetic tunnel junction structure, and a bottom electrode disposed below the magnetic tunnel junction structure.
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