CN112928201B - Magnetic tunnel junction structure of synthetic anti-iron layer with lattice transmission function - Google Patents

Magnetic tunnel junction structure of synthetic anti-iron layer with lattice transmission function Download PDF

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CN112928201B
CN112928201B CN201911233568.7A CN201911233568A CN112928201B CN 112928201 B CN112928201 B CN 112928201B CN 201911233568 A CN201911233568 A CN 201911233568A CN 112928201 B CN112928201 B CN 112928201B
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magnetic tunnel
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tunnel junction
lattice
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CN112928201A (en
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张云森
郭一民
陈峻
肖荣福
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Shanghai Information Technologies Co ltd
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Abstract

The application provides a magnetic tunnel knot structure on synthetic anti-iron layer with lattice transmission effect, magnetic tunnel knot structure sets up the synthetic anti-ferromagnetic layer that anti-ferromagnetic coupling layer combines two ferromagnetic layers, and cooperation anti-ferromagnetic coupling layer and lattice cut off the layer, realize synthetic anti-ferromagnetic layer to the lattice conversion and the strong ferromagnetic coupling between the reference layer, are favorable to magnetic tunnel to tie the unit in the magnetism, the promotion of electricity and yield and the reduction of device.

Description

Magnetic tunnel junction structure of synthetic anti-iron layer with lattice transmission effect
Technical Field
The present invention relates to the field of memory technologies, and in particular, to a magnetic tunnel junction structure of a magnetic random access memory.
Background
Magnetic Random Access Memory (MRAM) in a Magnetic Tunnel Junction (MTJ) having Perpendicular Anisotropy (PMA), as a free layer for storing information, has two magnetization directions in a vertical direction, that is: upward and downward, respectively corresponding to "0" and "1" or "1" and "0" in the binary system, in practical application, when reading information or leaving space, the magnetization direction of the free layer will remain unchanged; during writing, if a signal different from the existing state is input, the magnetization direction of the free layer will be flipped by one hundred and eighty degrees in the vertical direction. The ability of a magnetic random access Memory to maintain the magnetization direction of the free layer constant is called Data Retention (Data Retention) or Thermal Stability (Thermal Stability), and is not required to be the same in different application situations, for a typical Non-volatile Memory (NVM), for example: the method is applied to the field of automotive electronics, the requirement of data storage capacity is that the data can be stored for at least 10 years at 125 ℃ or even 150 ℃, and the reduction of data retention capacity or thermal stability can be caused when external magnetic field is turned over, thermal disturbance, current disturbance or reading and writing are carried out for many times, so that the pinning of a Reference Layer (RL) is usually realized by adopting a Synthetic Anti-Ferromagnetic Layer (SyAF) superlattice. The current manufacturers use various techniques to achieve lattice matching of the synthetic antiferromagnetic layer to the reference layer, but the "demagnetisation" situation still occurs.
Disclosure of Invention
In order to solve the above technical problem, an object of the present application is to provide a magnetic tunnel junction structure with a synthetic antiferromagnet layer having a lattice transport effect, which realizes pinning of a reference layer, lattice transition, and reduction/avoidance of "desferrimagnetic coupling".
The purpose of the application and the technical problem to be solved are realized by adopting the following technical scheme.
According to the magnetic tunnel junction structure of the Synthetic Anti-iron Layer with lattice transport effect, the structure from top to bottom comprises a Free Layer (FL), a Barrier Layer (Tunnel Barrier Layer, TB), a Reference Layer (Reference Layer, RL), a lattice Breaking Layer (CBL), a Synthetic Anti-ferromagnetic Layer (SyAF) and a Seed Layer (Seed Layer; SL), wherein the Synthetic Anti-ferromagnetic Layer comprises: a first ferromagnetic layer formed of a transition metal having a face-centered crystalline structure in combination with a ferromagnetic material; and an antiferromagnetic coupling layer disposed on the first ferromagnetic layer and formed of a transition metal material capable of forming antiferromagnetic coupling; a second ferromagnetic layer disposed on the antiferromagnetic coupling layer and formed of a transition metal having a partial face-centered crystal structure in combination with a ferromagnetic material; wherein the antiferromagnetic coupling of the second ferromagnetic layer and the first ferromagnetic layer is achieved through the antiferromagnetic coupling layer; effecting ferromagnetic coupling of a reference layer to the second ferromagnetic layer through the lattice-partitioning layer to effect pinning of the reference layer magnetization vector; wherein the total thickness of the first ferromagnetic layer is 0.5 nm-4.0 nm, and the material of the first ferromagnetic layer is [ Co/Pt ]] n Co，[Co/Pd] n Co or [ Co/Ni)] n Co, n is more than or equal to 2; the total thickness of the second ferromagnetic layer is 0.5 nm-2.0 nm, and the material of the second ferromagnetic layer is CoX [ Pt/CoX ]] m ，CoX[Pd/CoX] m ，CoX[Ni/CoX] m ，Co[Y/Pt/Co] m ，Co[Y/Pd/Co] m ，Co[Y/Ni/Co] m ，Co[Pt/Y/Co] m ，Co[Pd/Y/Co] m Or Co [ Ni/Y/Co] m And the m is more than or equal to 1; the component of X is Mg, al, C, BSi, P, S, sc, ti, V, cr, cu, zn, ga, Y, zr, nb, mo, tc, hf, ta, W or combinations thereof; the component of Y is Mg, al, si, sc, ti, V, cr, cu, zn, ga, Y, zr, nb, mo, tc, hf, ta or W.
The technical problem solved by the application can be further realized by adopting the following technical measures.
In an embodiment of the present application, in the first ferromagnetic layer, the thicknesses of the single layers of Co, pt, and Ni are less than 1nm, and the thicknesses of the sublayers may be the same or different; preferably, the monolayer thickness of Co, ni, pt or Pd is below 0.5nm.
In one embodiment of the present application, in CoX, the atomic percent of X is a,0< -X ≦ 15%. CoX is realized by adopting a co-sputtering mode or a sputtering deposition mode on an alloy target material. The thickness of Y is b, 0-less-than-0.5 nm.
In one embodiment of the present application, the first ferromagnetic layer or the second ferromagnetic layer is deposited at a high temperature, which does not exceed 400 ℃; after deposition, it is optionally cooled to room temperature or ultra-low temperature.
In an embodiment of the present application, the antiferromagnetic coupling layer is formed of Ir, ru, rh, ag, au, re, os or a combination thereof, and has a thickness of 0.3nm to 1.5nm. Furthermore, the antiferromagnetic coupling layer can select a first RKKY oscillation peak (0.3 nm-0.6 nm) of Ru, can select a second RKKY oscillation peak (0.7 nm-0.9 nm) of Ru, and can also select a first RKKY oscillation peak (0.3 nm-0.5 nm) of Ir.
In one embodiment of the present application, an annealing process is performed on the magnetic tunnel junction to cause the reference layer and the free layer to transform from an amorphous structure to a body-centered cubic stacked crystal structure under the templating effect of the face-centered cubic crystal structure barrier layer.
The present application provides a synthetic antiferromagnetic layer (SyAF) with lattice transport due to a second ferromagnetic layer (2) nd FM) does not have a strict FCC (001) structure, its lattice can be better matched to the Reference Layer (RL) with BCC (001), and ferromagnetic coupling of the synthetic antiferromagnetic layer (SyAF) and the Reference Layer (RL) is also achieved. The overall MTJ cell magnetism is very advantageous,the improvement of electricity and yield and the miniaturization of devices.
Drawings
FIG. 1 is a diagram illustrating a three-layer structure of a magnetic tunnel junction of a magnetic random access memory according to an embodiment of the present invention.
Description of the symbols
10, a bottom electrode; 20, magnetic tunnel junction; 21, a seed layer; 22, synthesizing an antiferromagnetic layer; 23, a lattice partition layer; 24 reference layer; 25, a barrier layer; 26, a free layer; 27: a cover layer; 30, a top electrode.
Detailed Description
The following description of the embodiments refers to the accompanying drawings for illustrating the specific embodiments in which the invention may be practiced. In the present invention, directional terms such as "up", "down", "front", "back", "left", "right", "inner", "outer", "side", etc. refer to directions of the attached drawings. Accordingly, the directional terminology is used for purposes of illustration and understanding and is in no way limiting.
The drawings and description are to be regarded as illustrative in nature, and not as restrictive. In the drawings, elements having similar structures are denoted by the same reference numerals. In addition, the size and thickness of each component shown in the drawings are arbitrarily illustrated for understanding and convenience of description, but the present invention is not limited thereto.
In the drawings, the range of arrangements of devices, systems, components, circuits is exaggerated for clarity, understanding and ease of description. It will be understood that when an element is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present.
In addition, in the description, unless explicitly described to the contrary, the word "comprise" will be understood to mean the inclusion of stated elements but not the exclusion of any other elements. Further, in the specification, "on". Immediately above "means above or below the target component, and does not mean that it must be on top based on the direction of gravity.
To further illustrate the technical means and effects of the present invention adopted to achieve the predetermined objects, the following detailed description is provided with reference to the accompanying drawings and embodiments for a magnetic tunnel junction structure of a synthetic anti-iron layer with lattice transport effect according to the present invention, and its specific structure, characteristics and effects are described below.
FIG. 1 is a diagram illustrating a double-layer structure of a magnetic tunnel junction of a magnetic random access memory according to an embodiment of the present invention. FIG. 1 is a schematic diagram of a three-layer structure of a magnetic tunnel junction of a magnetic random access memory according to an embodiment of the present invention. The magnetic memory cell structure comprises at least a multi-layer structure formed by a bottom electrode 10, a magnetic tunnel junction 20 and a top electrode 30. The magnetic tunnel junction 20 includes, from top to bottom, a Free Layer (FL) 26, a Barrier Layer (TB) 25, a Reference Layer (RL) 24, a Crystal Breaking Layer (CBL) 23, a Synthetic Anti-Ferromagnetic Layer (SyAF) 22, and a Seed Layer (Seed Layer; SL) 21.
In one embodiment of the present application, as shown in FIG. 1, the synthetic antiferromagnetic layer 22 includes a first ferromagnetic layer (1) disposed from bottom to top st Ferro-Magnetic Layer,1 st FML) formed of a transition metal having a face-centered crystalline structure in combination with a ferromagnetic material; an Anti-ferromagnetic coupling Layer (AFCL) disposed on the first ferromagnetic Layer and formed of a transition metal material capable of forming an Anti-ferromagnetic coupling; second ferromagnetic layer (2) nd Ferro-Magnetic Layer,2 nd FML) arranged on the antiferromagnetically-coupled layer and formed by combining transition metal with ferromagnetic materials with partial face-centered crystal structures; wherein the antiferromagnetic coupling of the second ferromagnetic layer and the first ferromagnetic layer is achieved through the antiferromagnetic coupling layer; ferromagnetic coupling of the reference layer 24 to the second ferromagnetic layer is achieved by the lattice-blocking layer 23 to achieve pinning of the magnetization vector of the reference layer 24; the total thickness of the first ferromagnetic layer is 0.5 nm-4.0 nm, and the material of the first ferromagnetic layer is [ Co/Pt ]] n Co，[Co/Pd] n Co or [ Co/Ni] n Co, n is more than or equal to 2; the total thickness of the second ferromagnetic layer is 0.5 nm-2.0 nm, and the material of the second ferromagnetic layer is CoX [ Pt/CoX ]] m ，CoX[Pd/CoX] m ，CoX[Ni/CoX] m ，Co[Y/Pt/Co] m ，Co[Y/Pd/Co] m ，Co[Y/Ni/Co] m ，Co[Pt/Y/Co] m ，Co[Pd/Y/Co] m Or Co [ Ni/Y/Co] m And the m is more than or equal to 1; the component of X is Mg, al, C, B, si, P, S, sc, ti, V, cr, cu, zn, ga, Y, zr, nb, mo, tc, hf, ta, W or the combination thereof; the component of Y is Mg, al, si, sc, ti, V, cr, cu, zn, ga, Y, zr, nb, mo, tc, hf, ta or W.
In an embodiment of the present application, in the first ferromagnetic layer, the thicknesses of the single layers of Co, pt, and Ni are less than 1nm, and the thicknesses of the sublayers may be the same or different; preferably, the monolayer thickness of Co, ni, pt or Pd is below 0.5nm.
In one embodiment of the present application, in CoX, X is represented by a,0 </X ≦ 15 atomic%. CoX is realized by adopting a co-sputtering mode or a sputtering deposition mode on an alloy target material. The thickness of Y is b, 0-less-than-0.5 nm.
In one embodiment of the present application, the first ferromagnetic layer or the second ferromagnetic layer is deposited at a high temperature, which does not exceed 400 ℃; after deposition, it is optionally cooled to room temperature or ultra-low temperature.
In an embodiment of the present application, the antiferromagnetic coupling layer is formed of Ir, ru, rh, ag, au, re, os or a combination thereof, and has a thickness of 0.3nm to 1.5nm. Furthermore, the anti-ferromagnetic coupling layer can select a first oscillation peak (0.3 nm-0.6 nm) of RKKY of Ru, can select a second oscillation peak (0.7 nm-0.9 nm) of RKKY of Ru, and can also select a first oscillation peak (0.3 nm-0.5 nm) of RKKY of Ir.
In one embodiment of the present application, the seed layer 21 is generally composed of Ta, ti, tiN, taN, W, WN, ru, pt, cr, O, N, coB, feB, coFeB or their combination, and further may be a multi-layer structure such as CoFeB/Ta/Pt, ta/Ru, ta/Pt or Ta/Pt/Ru. To optimize the crystal structure of the subsequent synthetic ferromagnetic layer (SyAF) 22.
In an embodiment of the present application, the total thickness of the lattice partition layer 23 is 0nm to 0.8nm, and the material is X or XY, wherein X is Mg, ca, sc, Y, ti, zr, V, ta, hf, nb, cr, mn, ru, ir, os, zn, al, ga, in, C, si, ge, sn, or any combination of the foregoing elements, and Y is CoB, feB, feCoB, feC, coC, feCoC, O, N, or the like.
In one embodiment of the present application, the Reference Layer (RL) 24 has a thickness of 0.5nm to 2.0nm, and is typically Co, fe, ni, coFe, coC, feC, feCoC, coB, feB, coFeB, or any combination thereof.
In one embodiment of the present application, the barrier layer 25 is a non-magnetic metal oxide having a total thickness of 0.6nm to 1.5nm, preferably MgO, mgZnO, mg 3 B 2 O 6 Or MgAl 2 O 4 Further, mgO may be selected.
In one embodiment of the present application, the free layer 26 has a variable magnetic polarization with a total thickness of 1.2nm to 3nm, and generally comprises CoB, feB, coFeB, coFe/CoFeB, fe/CoFeB, coFeB/(Ta, W, mo, hf)/CoFeB, fe/CoFeB/(W, mo, hf)/CoFeB or CoFe/CoFeB/(W, mo, hf)/CoFeB, and further CoFeB/(W, mo, hf)/CoFeB, fe/CoFeB/(W, mo, hf)/CoFeB or CoFe/CoFeB/(W, mo, hf)/CoFeB structure can be selected.
In one embodiment of the present application, after the deposition of the free layer 26, a Capping Layer (CL) 27, typically (Mg, mgO, mgZnO, mg), is again deposited 3 B 2 O 6 Or MgAl 2 O 4 ) /(combinations of W, mo, mg, nb, ru, hf, V, cr, or Pt) bilayer structure. Preferably, the structure MgO/(W, mo, hf)/Ru or MgO/Pt/(W, mo, hf)/Ru can be selected. The superior effect of selecting MgO provides a source of additional interfacial anisotropy for the free layer 26, thereby increasing thermal stability.
In one embodiment of the present application, an annealing process is performed on the magnetic tunnel junction 20 at a temperature between 350 ℃ and 400 ℃ to cause the reference layer 24 and the free layer 26 to transform from an amorphous structure to a body-centered cubic stacked crystal structure under the templating effect of the sodium chloride (NaCl) type face-centered cubic crystal structure barrier layer 25.
Another objective of the present invention is to provide a magnetic random access memory architecture, which includes a plurality of memory cells, each memory cell being disposed at a crossing of a bit line and a word line, each memory cell comprising: a magnetic tunnel junction 20 as any of the previously described; a bottom electrode located below the magnetic tunnel junction 20; and a top electrode located above the magnetic tunnel junction 20.
In one embodiment of the present application, the bottom electrode 10, the magnetic tunnel junction 20, and the top electrode 30 are all formed by a physical vapor deposition process.
In an embodiment of the present application, the material of the bottom electrode 10 is one or a combination of titanium, titanium nitride, tantalum nitride, ruthenium, tungsten nitride, and the like.
In an embodiment of the present application, the material of the top electrode 30 is selected from one or a combination of titanium, titanium nitride, tantalum nitride, tungsten nitride, and the like.
In some embodiments, the bottom electrode 10 is planarized after deposition to achieve a planar surface for the magnetic tunnel junction 20.
The present application provides a synthetic antiferromagnetic layer (SyAF) with lattice transport due to a second ferromagnetic layer (2) nd FM) does not have a strict FCC (001) structure, its lattice can be better matched to the Reference Layer (RL) with BCC (001), and ferromagnetic coupling of the synthetic antiferromagnetic layer (SyAF) and the Reference Layer (RL) is also achieved. The method is very beneficial to the improvement of magnetism, electricity and yield of the whole MTJ unit and the miniaturization of devices.
The terms "in one embodiment of the present application" and "in various embodiments" are used repeatedly. This phrase generally does not refer to the same embodiment; it may also refer to the same embodiment. The terms "comprising," "having," and "including" are synonymous, unless the context dictates otherwise.
Although the present application has been described with reference to specific embodiments, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the application, and all changes, substitutions and alterations that fall within the spirit and scope of the application are to be understood as being covered by the following claims.

Claims (10)

1. A magnetic tunnel junction structure of a synthetic antiferromagnetic layer with lattice transport effect is provided in a magnetic random access memory cell, the magnetic tunnel junction structure including a capping layer, a free layer, a barrier layer, a reference layer, a lattice partition layer, a synthetic antiferromagnetic layer and a seed layer from top to bottom, the synthetic antiferromagnetic layer comprising:
a first ferromagnetic layer formed of a transition metal having a face-centered crystalline structure in combination with a ferromagnetic material;
an antiferromagnetic coupling layer disposed on the first ferromagnetic layer and formed of a transition metal material capable of forming antiferromagnetic coupling;
a second ferromagnetic layer disposed on the antiferromagnetic coupling layer and formed of a transition metal having a partial planar-centered crystalline structure in combination with a ferromagnetic material;
wherein the antiferromagnetic coupling of the second ferromagnetic layer and the first ferromagnetic layer is achieved through the antiferromagnetic coupling layer; effecting ferromagnetic coupling of a reference layer and the second ferromagnetic layer through the lattice-blocking layer to effect pinning of the reference layer magnetization vector;
wherein the total thickness of the first ferromagnetic layer is 0.5 nm-4.0 nm, the material of the first ferromagnetic layer is [ Co/Pt ] nCo, [ Co/Pd ] nCo or [ Co/Ni ] nCo, and n is more than or equal to 2;
wherein the total thickness of the second ferromagnetic layer is 0.5 nm-2.0 nm, the second ferromagnetic layer is made of CoX [ Pt/CoX ] m, coX [ Pd/CoX ] m, coX [ Ni/CoX ] m, co [ Y/Pt/Co ] m, co [ Y/Pd/Co ] m, co [ Y/Ni/Co ] m, co [ Pt/Y/Co ] m, co [ Pd/Y/Co ] m or Co [ Ni/Y/Co ] m, and m is more than or equal to 1; the component of X is Mg, al, C, B, si, P, S, sc, ti, V, cr, cu, zn, ga, Y, zr, nb, mo, tc, hf, ta, W or the combination thereof; the component of Y is Mg, al, si, sc, ti, V, cr, cu, zn, ga, Y, zr, nb, mo, tc, hf, ta or W.
2. The magnetic tunnel junction structure with a lattice-transporting synthetic antiferromagnetic layer of claim 1 wherein in the first ferromagnetic layer a single layer of Co, pt or Ni is less than 1nm thick and the sublayers may be the same or different.
3. The magnetic tunnel junction structure with lattice transport synthetic anti-iron layer of claim 2 wherein the monolayer thickness of Co, ni, pt or Pd is below 0.5nm.
4. The magnetic tunnel junction structure of a synthetic anti-iron layer with lattice transport of claim 1 wherein in CoX, X is in atomic percent a, 0-a ≦ 15%.
5. The magnetic tunnel junction structure with lattice transport synthetic anti-iron layer of claim 2 wherein CoX is achieved by co-sputtering or sputter deposition of an alloy target.
6. A magnetic tunnel junction structure with lattice transport synthetic antiferro layers as in claim 1 wherein Y has a thickness of b, 0-b ≦ 0.5nm.
7. The magnetic tunnel junction structure with a lattice-transporting synthetic antiferromagnet layer of claim 1 wherein said first ferromagnetic layer is deposited at a temperature not exceeding 400 ℃ using a high temperature deposition; after deposition, cool to room temperature or ultra low temperature.
8. The magnetic tunnel junction structure with lattice transport synthetic antiferromagnet layer of claim 1 wherein said antiferromagnetically coupling layer is Ir, ru, rh, ag, au, re, os or combinations thereof, having a thickness of 0.3nm to 1.5nm.
9. The magnetic tunnel junction structure with a lattice-transporting synthetic antiferromagnet layer of claim 1 wherein said second ferromagnetic layer is deposited at a temperature not exceeding 400 ℃ using a high temperature deposition; after deposition, cool to room temperature or ultra low temperature.
10. A magnetic random access memory comprising the magnetic tunnel junction structure of any of claims 1-9, a top electrode disposed above the magnetic tunnel junction structure, and a bottom electrode disposed below the magnetic tunnel junction structure.
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