CN112736193A - Magnetic tunnel junction structure and magnetic random access memory thereof - Google Patents
Magnetic tunnel junction structure and magnetic random access memory thereof Download PDFInfo
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 83
- 230000004888 barrier function Effects 0.000 claims abstract description 35
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- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 21
- 239000004020 conductor Substances 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 131
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 48
- 239000000395 magnesium oxide Substances 0.000 claims description 40
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 37
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 32
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 22
- 229910052707 ruthenium Inorganic materials 0.000 claims description 22
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- 239000010936 titanium Substances 0.000 claims description 20
- 229910052721 tungsten Inorganic materials 0.000 claims description 19
- 239000010948 rhodium Substances 0.000 claims description 18
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- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 7
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 7
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052702 rhenium Inorganic materials 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- GKLVYJBZJHMRIY-UHFFFAOYSA-N technetium atom Chemical compound [Tc] GKLVYJBZJHMRIY-UHFFFAOYSA-N 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
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- -1 magnesium nitride Chemical class 0.000 claims description 5
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 5
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229910052712 strontium Inorganic materials 0.000 claims description 5
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 5
- GSWGDDYIUCWADU-UHFFFAOYSA-N aluminum magnesium oxygen(2-) Chemical compound [O--].[Mg++].[Al+3] GSWGDDYIUCWADU-UHFFFAOYSA-N 0.000 claims description 3
- VJQGOPNDIAJXEO-UHFFFAOYSA-N magnesium;oxoboron Chemical compound [Mg].O=[B] VJQGOPNDIAJXEO-UHFFFAOYSA-N 0.000 claims description 2
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 238000005192 partition Methods 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims 1
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- 239000013077 target material Substances 0.000 description 4
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- 238000000034 method Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
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- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 2
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- 229910026161 MgAl2O4 Inorganic materials 0.000 description 1
- WRSVIZQEENMKOC-UHFFFAOYSA-N [B].[Co].[Co].[Co] Chemical compound [B].[Co].[Co].[Co] WRSVIZQEENMKOC-UHFFFAOYSA-N 0.000 description 1
- ZDZZPLGHBXACDA-UHFFFAOYSA-N [B].[Fe].[Co] Chemical compound [B].[Fe].[Co] ZDZZPLGHBXACDA-UHFFFAOYSA-N 0.000 description 1
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- ZDVYABSQRRRIOJ-UHFFFAOYSA-N boron;iron Chemical compound [Fe]#B ZDVYABSQRRRIOJ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Abstract
A magnetic tunnel junction structure includes a barrier layer formed of a magnesium metal oxide layer containing a doped conductive material. By doping or further compounding the barrier layer, the stable and sufficient tunneling magnetic resistance rate is kept while the area product of the resistance is reduced under the condition that the thickness of the barrier layer is not reduced, and the improvement of the read/write performance of the MRAM circuit and the manufacture of the subminiature MRAM circuit are greatly facilitated.
Description
Technical Field
The present invention relates to the field of memory technologies, and in particular, to a magnetic tunnel junction structure and a magnetic random access memory thereof.
Background
Magnetic Random Access Memory (MRAM) in a Magnetic Tunnel Junction (MTJ) having Perpendicular Anisotropy (PMA), as a free layer for storing information, has two magnetization directions in a vertical direction, that is: upward and downward, respectively corresponding to "0" and "1" or "1" and "0" in binary, in practical application, the magnetization direction of the free layer will remain unchanged when reading information or leaving empty; during writing, if a signal different from the existing state is input, the magnetization direction of the free layer will be flipped by one hundred and eighty degrees in the vertical direction. The ability of the magnetization direction of the free layer of the magnetic random access Memory to remain unchanged is called data retention capability or thermal stability, and is required to be different in different application situations, for a typical Non-volatile Memory (NVM), such as: the data storage capacity is required to be capable of storing data for at least ten years at 125 ℃ or 150 ℃, and the data retention capacity or the thermal stability is reduced when external magnetic field overturning, thermal disturbance, current disturbance or reading and writing are carried out for multiple times.
In order to increase the storage density of MRAM and meet the circuit requirements of CMOS with higher technology node, the Critical Dimension (CD) of the magnetic tunnel junction is smaller and smaller, and correspondingly, the Resistance Area Product (RA) of the magnetic tunnel junction is also smaller and smaller. At the same time as the critical dimensions decrease, a drastic deterioration of the thermal stability factor (v) of the magnetic tunnel junction is found. In order to increase the thermal stability factor (v) of the ultra-small MRAM cell device, the effective perpendicular anisotropy energy density may be increased by reducing the thickness of the free layer, adding or changing the free layer to a material with a low saturation magnetic susceptibility, and so on, thereby maintaining a higher thermal stability factor (v), but the Tunneling Magnetoresistance Ratio (TMR) of the magnetic Tunnel junction will be reduced, thereby increasing the error rate of the memory read operation. Moreover, due to the low barrier layer thickness, the Breakdown (BD) voltage is also reduced, which may reduce the endurance of the MRAM device.
Disclosure of Invention
In order to solve the above technical problems, an object of the present application is to provide a magnetic tunnel junction structure and a magnetic random access memory thereof, which can enhance the performance of a barrier layer.
The purpose of the application and the technical problem to be solved are realized by adopting the following technical scheme.
According to the magnetic random tunnel junction structure provided by the application, the structure of the magnetic random tunnel junction structure comprises a Covering Layer (CL), a Free Layer (FL), a Barrier Layer (TBL), a Reference Layer (RL), a Crystal Breaking Layer (CBL), an antiferromagnetic Anti-ferromagnetic Layer (SyAF) and a Seed Layer (Seed Layer; SL) from top to bottom, wherein the Barrier Layer is formed by a magnesium metal oxide Layer containing a doped ferromagnetic material.
The technical problem solved by the application can be further realized by adopting the following technical measures.
In an embodiment of the application, the magnesium metal oxide layer containing the doped ferromagnetic material is a magnesium metal oxide layer uniformly doped with the ferromagnetic material.
In one embodiment of the present application, the barrier layer is [ magnesium oxide ]]1-aMaM is magnesium, aluminum, silicon, calcium, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, strontium, yttrium, zirconium, niobium, molybdenum, technetium, ruthenium, rhodium, palladium, silver, hafnium, tantalum, tungsten, rhenium, osmium, iridium, platinum, gold, or a combination thereof, 0<a is less than or equal to 20 percent. The barrier layer is formed by sputtering deposition by doping M into the magnesium oxide target or co-sputtering deposition of the magnesium oxide target and the M target.
In an embodiment of the present application, the magnesium metal oxide layer containing the doped ferromagnetic material is a magnesium metal oxide layer of a single-time or multi-time insertion doped conductive material sublayer.
In one embodiment of the present application, the barrier layer is [ MgO/M ]]nThe structure of the magnesium oxide, n is more than or equal to 1 and less than or equal to 3, preferably, the thickness of the single-layer magnesium oxide is between 0.3 and 1.0 nanometers, and the thicknesses of the single-layer magnesium oxide are the same or different; preferably, M is magnesium, aluminum, silicon, calcium,Scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, strontium, yttrium, zirconium, niobium, molybdenum, technetium, ruthenium, rhodium, palladium, silver, hafnium, tantalum, tungsten, rhenium, osmium, iridium, platinum, gold, or combinations thereof, the thickness of the monolayer M is b, 0<b is less than or equal to 0.1 nm, and the thickness of the single layer M can be the same or different.
In an embodiment of the present application, the generation of each layer of magnesium oxide is realized by performing sputtering deposition on a magnesium oxide target, or by performing sputtering deposition on a magnesium target first and then oxidizing to form magnesium oxide.
In an embodiment of the present application, the total thickness of the barrier layer is between 0.5 nm and 1.5 nm.
In an embodiment of the present application, the capping layer includes a double-layer structure of a first capping sublayer and a second capping sublayer, the first capping sublayer is made of a non-magnetic metal oxide, and the second capping layer is formed of a magnetic and a non-magnetic metal or a combination thereof.
In an embodiment of the present application, the thickness of the first capping sublayer is between 0.6 nm and 1.5 nm, and the non-magnetic metal oxide includes magnesium oxide, magnesium zinc oxide, aluminum oxide, magnesium nitride, magnesium boron oxide, or magnesium aluminum oxide.
In an embodiment of the present application, the second cap sub-layer is made of a multi-layer material of tungsten, zinc, aluminum, copper, calcium, titanium, vanadium, chromium, molybdenum, magnesium, niobium, ruthenium, hafnium, platinum, or a combination thereof, and the thickness of the second cap sub-layer is between 0.5 nm and 3.0 nm.
It is another objective of the present invention to provide a magnetic random access memory, wherein the storage unit comprises any one of the foregoing magnetic tunnel junction structures, a top electrode disposed above the magnetic tunnel junction structure, and a bottom electrode disposed below the magnetic tunnel junction structure.
It is another objective of the present invention to provide a magnetic random access memory, wherein the storage unit comprises any one of the foregoing magnetic tunnel junction structures, a top electrode disposed above the magnetic tunnel junction structure, and a bottom electrode disposed below the magnetic tunnel junction structure.
In an embodiment of the present application, an annealing operation is performed at a temperature greater than 350 ℃ for at least 30 minutes after the bottom electrode, seed layer, antiferromagnetic layer, lattice partition layer, reference layer, barrier layer, free layer, capping layer, and top electrode are deposited.
By doping or further compounding the barrier layer, the stable and sufficient tunneling magnetic resistance rate is kept while the area product of the resistance is reduced under the condition that the thickness of the barrier layer is not reduced, and the improvement of the read/write performance of the MRAM circuit and the manufacture of the subminiature MRAM circuit are greatly facilitated.
Drawings
FIG. 1 is a diagram illustrating an exemplary MRAM cell structure;
FIG. 2 is a diagram illustrating a magnetic memory cell structure of an embodiment of the magnetic random access memory of the present application;
FIG. 3A is a schematic diagram of a doping structure of a barrier layer according to an embodiment of the present disclosure;
fig. 3B is a schematic view of a conductive via structure of a barrier layer according to an embodiment of the present disclosure.
Detailed Description
Refer to the drawings wherein like reference numbers refer to like elements throughout. The following description is based on illustrated embodiments of the application and should not be taken as limiting the application with respect to other embodiments that are not detailed herein.
The following description of the various embodiments refers to the accompanying drawings, which illustrate specific embodiments that can be used to practice the present application. In the present application, directional terms such as "up", "down", "front", "back", "left", "right", "inner", "outer", "side", and the like are merely referring to the directions of the attached drawings. Accordingly, the directional terminology is used for purposes of illustration and understanding, and is in no way limiting.
The terms "first," "second," "third," and the like in the description and in the claims of the present application and in the above-described drawings, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It should be understood that the objects so described are interchangeable under appropriate circumstances. Furthermore, the terms "include" and "have," as well as other similar variations of embodiments, are intended to cover non-exclusive inclusions.
The terminology used in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the concepts of the present application. Unless the context clearly dictates otherwise, expressions used in the singular form encompass expressions in the plural form. In the present specification, it will be understood that terms such as "including," "having," and "containing" are intended to specify the presence of the features, integers, steps, acts, or combinations thereof disclosed in the specification, and are not intended to preclude the presence or addition of one or more other features, integers, steps, acts, or combinations thereof. Like reference symbols in the various drawings indicate like elements.
The drawings and description are to be regarded as illustrative in nature, and not as restrictive. In the drawings, elements having similar structures are denoted by the same reference numerals. In addition, the size and thickness of each component shown in the drawings are arbitrarily illustrated for understanding and ease of description, but the present application is not limited thereto.
In the drawings, the range of configurations of devices, systems, components, circuits is exaggerated for clarity, understanding, and ease of description. It will be understood that when an element is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present.
In addition, in the description, unless explicitly described to the contrary, the word "comprise" will be understood to mean that the recited components are included, but not to exclude any other components. Further, in the specification, "on.
To further illustrate the technical means and effects of the present invention adopted to achieve the predetermined objects, the following detailed description is given to a magnetic tunnel junction structure and a magnetic random access memory according to the present invention with reference to the accompanying drawings and specific embodiments.
FIG. 1 is a diagram of an exemplary MRAM cell structure. The magnetic memory cell structure includes a multi-layer structure formed by at least a Bottom Electrode (BE) 110, a Magnetic Tunnel Junction (MTJ)200, and a Top Electrode (Top Electrode) 310.
In some embodiments, the bottom electrode 110 is titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), ruthenium (Ru), tungsten (W), tungsten nitride (WN), or combinations thereof; the top electrode 310 is made of titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), tungsten (W), tungsten nitride (WN), or a combination thereof. The magnetic memory cell structure is typically implemented by Physical Vapor Deposition (PVD), and is typically planarized after the bottom electrode 110 is deposited to achieve surface flatness for the magnetic tunnel junction 200.
In some embodiments, the magnetic tunnel junction 200 includes, from top to bottom, a Capping Layer (CL) 270, a Free Layer (FL) 260, a Barrier Layer (Tunnel Barrier, TBL)250, a Reference Layer (RL) 240, a lattice Breaking Layer (CBL) 230, an antiferromagnetic Anti-ferromagnetic Layer (SyAF) 220, and a Seed Layer (Seed Layer; SL) 210.
As shown in fig. 1, in some embodiments, the free layer 260 is composed of a single or multi-layer structure of CoFeB, CoFeB/CoFeB, or CoFeB/(Ta, W, Mo, or Hf)/CoFeB, and a vertical anisotropy enhancing layer 270a of MgO is added to enhance the energy barrier (E) of the free layer, but since MgO has high Resistance, the Resistance Area Product (RA) of MTJ is increased. However, in order to increase the storage density of MRAM and meet the circuit requirements of CMOS with higher technology node, the Critical Dimension (CD) of the magnetic tunnel junction is getting smaller, and the Resistance Area Product (RA) of the magnetic tunnel junction is also getting smaller. While reducing the critical dimension of the magnetic tunnel junction, it was found that the thermal stability factor (v) of the magnetic tunnel junction becomes drastically worse. In order to increase the thermal stability factor (v) of the ultra-small MRAM cell device, the effective perpendicular anisotropy energy density may be increased by reducing the thickness of the free layer, adding or changing the free layer to a material with a low saturation magnetic susceptibility, and so on, thereby maintaining a higher thermal stability factor (v), but the Tunneling Magnetoresistance Ratio (TMR) of the magnetic Tunnel junction will be reduced, thereby increasing the error rate of the memory read operation. Moreover, due to the low barrier layer thickness, the Breakdown (BD) voltage is also reduced, which may reduce the endurance of the MRAM device.
FIG. 2 is a schematic diagram of a magnetic memory cell structure of a magnetic memory according to an embodiment of the present application; FIG. 3A is a schematic view of a conductive doping structure of a barrier layer according to an embodiment of the present disclosure; fig. 3B is a schematic view of a conductive via structure of a barrier layer according to an embodiment of the present disclosure. The prior art also refers to fig. 1 to facilitate understanding.
In one embodiment of the present application, as shown in fig. 2, a magnetic tunnel junction structure 200 includes a Capping Layer (CL) 270, a Free Layer (FL) 260, a Barrier Layer (tunnel Barrier, TBL)250, a Reference Layer (RL) 240, a lattice Breaking Layer (CBL) 230, an Anti-ferromagnetic Layer (SyAF) 220, and a Seed Layer (Seed Layer; SL)210 from top to bottom, wherein the Barrier Layer 250 is a magnesium-doped metal oxide.
As shown in FIG. 3A, in some embodiments, the barrier layer 270 is [ magnesium oxide MgO ]]1-aMaThe magnesium metal oxide layer containing the doping element is uniformly doped. Preferably, M is Mg, Al, Si, Ca, Sc, Ti, V, Cr, Mn, Fe, Fn, Co, Ni, Cu, Zn, Ga, Sr, YY, Zr, Nb, Mo, technetium Tc, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Pt, Au or combinations thereof, 0<a is less than or equal to 20 percent. The total thickness of the barrier layer 250 is between 0.5 nm and 1.5 nm, and the method is realizedThe magnesium oxide target material can be doped with M to carry out sputtering deposition or the magnesium oxide target material and the M target can be subjected to co-sputtering deposition in a PVD process cavity.
As illustrated in fig. 3B, in some embodiments, the doped conductive material-containing magnesium metal oxide layer is a single-pass or multiple-pass doped conductive material sublayer magnesium metal oxide layer. The barrier layer 250 is [ magnesium oxide/M ]]nThe structure of the magnesium oxide is more than or equal to 1 and less than or equal to n, preferably, the thickness of the single-layer magnesium oxide MgO is between 0.3 and 1.0 nm, and the thicknesses of the single-layer magnesium oxide MgO are the same or different; preferably, n is more than or equal to 1 and less than or equal to 3, and the thickness of the single-layer magnesium oxide is preferably between 0.3 and 1.0 nanometers and is the same or different; preferably, M is magnesium, aluminum, silicon, calcium, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, strontium, yttrium, zirconium, niobium, molybdenum, technetium, ruthenium, rhodium, palladium, silver, hafnium, tantalum, tungsten, rhenium, osmium, iridium, platinum, gold, or a combination thereof, the monolayer M has a thickness b, 0<b is less than or equal to 0.1 nm, and the thickness of the single layer M can be the same or different. The generation mode of each layer of magnesium oxide is realized by adopting a mode of carrying out sputtering deposition on a magnesium oxide target material, or the magnesium oxide target material is firstly subjected to sputtering deposition and then oxidized to form magnesium oxide. The total thickness of the barrier layer of the composite layer is also between 0.5 nm and 1.5 nm.
In an embodiment of the present application, the cover layer 270 includes a double-layer structure of a first cover sub-layer 271 and a second cover sub-layer 272; the first cover sub-layer 271 is made of a non-magnetic metal oxide with a thickness of 0.6 nm to 1.5 nm, and the non-magnetic metal oxide includes MgO, MgZnO, ZnO, Al2O3MgN, Mg boron oxide, Mg3B2O6Or magnesium aluminum oxide MgAl2O4(ii) a The second cap sub-layer 272 is made of a multi-layer material of W, Zn, Al, Cu, Ca, Ti, V, Cr, Mo, Mg, Nb, Ru, Hf, Pt, or combinations thereof, and has a total thickness of 0.5 nm to 10.0 nm.
Referring to fig. 2 to 3B, in an embodiment of the present application, a memory cell of a magnetic memory includes any one of the above-described magnetic tunnel junction 200 structures, a top electrode 310 disposed above the magnetic tunnel junction 200 structure, and a bottom electrode 110 disposed below the magnetic tunnel junction 200 structure.
In an embodiment of the present application, the material of the seed layer 210 of the magnetic tunnel junction 200 is one or a combination of Ti, TiN, Ta, TaN, W, WN, Ru, Pt, Cr, CrCo, Ni, CrNi, CoB, FeB, CoFeB, etc. In some embodiments, the seed layer 21 may be selected from one of tantalum Ta/ruthenium Ru, tantalum Ta/platinum Pt/ruthenium Ru, and the like.
The antiferromagnetic layer 220, formally known as an antiparallel ferromagnetic super-lattice (Anti-Parallel ferromagnetic super-lattice) layer 220 is also known as a Synthetic antiferromagnetic-ferromagnetic (SyAF) layer. Typically from [ cobalt Co/platinum Pt ]]nCo/(Ru, Ir, Rh) and Co/Pt]nCo/(Ru, Ir, Rh)/(Co, Co [ Co/Pt ] Co]m) [ cobalt Co/palladium Pd ]]nCo/(Ru, Ir, Rh) and Co/Pt]nCo/(Ru, Ir, Rh)/(Co, Co [ Co/Pt ] Co]m) [ cobalt Co/nickel Ni ]]nCo/(Ru, Ir, Rh) or [ Co/Ni ]]nCo/(Ru, Ir, Rh)/(Co, Co [ Ni/Co ]]m) A superlattice composition, wherein n>m.gtoreq.0, preferably, the monolayer thickness of cobalt (Co) and platinum (Pt) is below 0.5 nm, such as: 0.10 nm, 0.15 nm, 0.20 nm, 0.25 nm, 0.30 nm, 0.35 nm, 0.40 nm, 0.45 nm, or 0.50 nm …. In some embodiments, the thickness of each layer structure of the antiferromagnetic layer 220 is the same or different. The antiferromagnetic layer 220 has a strong perpendicular anisotropy (PMA).
In an embodiment of the present application, the reference layer 240 has a magnetic polarization invariance under ferromagnetic coupling of the antiferromagnetic layer 220. The reference layer 240 is made of one or a combination of cobalt Co, iron Fe, nickel Ni, cobalt ferrite CoFe, cobalt boride CoB, iron boride FeB, cobalt iron carbon CoFeC, and cobalt iron boron alloy CoFeB, and the thickness of the reference layer 25 is between 0.5 nm and 1.5 nm.
Since the antiferromagnetic layer 220 has a Face Centered Cubic (FCC) crystal structure and the reference layer 240 has a Body Centered Cubic (BCC) crystal structure, the lattices are not matched, in order to realize the transition and ferromagnetic coupling from the antiferromagnetic layer 220 to the reference layer 240, a lattice-blocking layer 230 is typically added between two layers of materials, the material of the lattice-blocking layer 230 is one or a combination of Ta, W, Mo, Hf, Fe, Co, including but not limited to Co (Ta, W, Mo, or Hf), Fe (FeCo (Ta, W, Mo, or Hf), or Fe-b (Ta, W, Mo, or Hf), and the thickness of the lattice-blocking layer 230 is between 0.1 nm and 0.5 nm.
In an embodiment of the present application, the free layer 260 has a variable magnetic polarization, and is made of a single-layer structure selected from CoB, FeB, CoFeB, or a double-layer structure of CoFe/CoFeB, or CoFeB/(W, Mo, V, Nb, Cr, Hf, Ti, Zr, Ta, Sc, Y, Zn, Ru, Os, Rh, Ir, Pd, and/or Pt)/CoFeB, CoFeB/(W, Mo, V, Nb, Cr, Hf, Ti, Zr, Ta, Sc, Y, Zn, Ru, Hf, Os, Rh, Ir, Sc, Y, Zn, Ru, Os, Rh, Ir, Pd, and/or Pt)/CoFeB, or a three-layer structure of Fe/Co/(W, Mo, V, Nb, Cr, Nb, Hf, Ti, Zr, Ta, Nb, Y, Zn, Ru, Os, Mo, V, Nb, or Pt)/CoFeB, A four-layer structure of chromium Cr, hafnium Hf, titanium Ti, zirconium Zr, tantalum Ta, scandium Sc, yttrium Y, zinc Zn, ruthenium Ru, osmium Os, rhodium Rh, iridium Ir, palladium Pd and/or platinum Pt)/cobalt ferroboron, cobalt ferrite/cobalt ferroboron/(tungsten W, molybdenum Mo, vanadium V, niobium Nb, chromium Cr, hafnium Hf, titanium Ti, zirconium Zr, tantalum Ta, scandium Sc, yttrium Y, zinc Zn, ruthenium Ru, osmium Os, rhodium Rh, iridium Ir, palladium Pd and/or platinum Pt)/cobalt ferroboron; the thickness of the free layer 260 is between 1.2 nm and 3.0 nm.
In an embodiment of the present application, after all the film layers are deposited, an annealing process is performed on the magnetic tunnel junction 200 at a temperature greater than 350 ℃ for a time greater than 30 minutes to change the reference layer 240 and the free sub-layer 260 from an amorphous phase to a body-centered cubic (BCC) crystal structure.
By doping or further compounding the barrier layer, the resistance area is reduced, the stable and sufficient tunneling magnetic resistance rate is kept at the same time under the condition of not reducing the thickness of the barrier layer, and the improvement of the read/write performance of the MRAM circuit and the manufacture of the ultra-small MRAM circuit are greatly facilitated.
The terms "in one embodiment of the present application" and "in various embodiments" are used repeatedly. This phrase generally does not refer to the same embodiment; it may also refer to the same embodiment. The terms "comprising," "having," and "including" are synonymous, unless the context dictates otherwise.
Although the present application has been described with reference to specific embodiments, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the application, and all changes, substitutions and alterations that fall within the spirit and scope of the application are to be understood as being covered by the following claims.
Claims (12)
1. A magnetic tunnel junction structure of a magnetic memory is arranged in a magnetic random access memory unit, the magnetic tunnel junction structure comprises a covering layer, a free layer, a barrier layer, a reference layer, a crystal lattice partition layer, an anti-ferromagnetic layer and a seed layer from top to bottom, and the magnetic tunnel junction structure is characterized in that the barrier layer is formed by a magnesium metal oxide layer containing a doped conductive material.
2. The magnetic tunnel junction structure of claim 1 wherein said doped conductive material containing magnesium metal oxide layer is a uniformly doped magnesium metal oxide layer.
3. The magnetic tunnel junction structure of claim 2 wherein said barrier layer is [ magnesium oxide ]]1-aMaM is magnesium, aluminum, silicon, calcium, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, strontium, yttrium, zirconium, niobium, molybdenum, technetium, ruthenium, rhodium, palladium, silver, hafnium, tantalum, tungsten, rhenium, osmium, iridium, platinum, gold, or a combination thereof, 0<a≤20％。
4. The magnetic tunnel junction structure of claim 3 wherein the barrier layer is sputter deposited by doping the magnesium oxide target with M or co-sputter deposited with a magnesium oxide target and M target.
5. The magnetic tunnel junction structure of claim 1 wherein said doped conductive material containing magnesium metal oxide layer is a single-pass or multiple-pass doped ferromagnetic material sublayer magnesium metal oxide layer.
6. The magnetic tunnel junction structure of claim 4 wherein the barrier layer is [ MgO/M ]]nThe structure of the magnesium oxide, n is more than or equal to 1 and less than or equal to 3, preferably, the thickness of the single-layer magnesium oxide is between 0.3 and 1.0 nanometers, and the thicknesses of the single-layer magnesium oxide are the same or different; preferably, M is magnesium, aluminum, silicon, calcium, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, strontium, yttrium, zirconium, niobium, molybdenum, technetium, ruthenium, rhodium, palladium, silver, hafnium, tantalum, tungsten, rhenium, osmium, iridium, platinum, gold, or a combination thereof, the monolayer M has a thickness b, 0<b is less than or equal to 0.1 nm, and the thickness of the single layer M can be the same or different.
7. The magnetic tunnel junction structure of claim 6 wherein each layer of magnesium oxide is formed by sputter deposition of a magnesium oxide target or by sputter deposition of a magnesium target followed by oxidation to form magnesium oxide.
8. The magnetic tunnel junction structure of claim 1 wherein the total thickness of the barrier layer is between 0.5 nm and 1.5 nm.
9. The magnetic tunnel junction structure of claim 1 wherein the capping layer comprises a bilayer of a first capping sublayer and a second capping sublayer, the first capping sublayer being made of a non-magnetic metal oxide and the second capping layer being formed of a magnetic and a non-magnetic metal or a combination thereof.
10. The mtj structure of claim 9, wherein the first capping sublayer has a thickness of between 0.6 nm and 1.5 nm, and the nonmagnetic metal oxide comprises magnesium oxide, magnesium zinc oxide, aluminum oxide, magnesium nitride, magnesium boron oxide, or magnesium aluminum oxide.
11. The mtj structure of claim 9, wherein the second capping sublayer is made of a multilayer material of w, zn, al, cu, ca, ti, v, cr, mo, mg, nb, ru, hf, pt, or a combination thereof, and has a thickness of 0.5 nm to 3.0 nm.
12. A magnetic memory comprising the magnetic tunnel junction structure of any of claims 1-11, a top electrode disposed above the magnetic tunnel junction structure, and a bottom electrode disposed below the magnetic tunnel junction structure.
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