CN112736194A - Magnetic tunnel junction structure and magnetic random access memory - Google Patents
Magnetic tunnel junction structure and magnetic random access memory Download PDFInfo
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 78
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- 239000000395 magnesium oxide Substances 0.000 claims abstract description 38
- 230000004888 barrier function Effects 0.000 claims abstract description 35
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
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- 238000010586 diagram Methods 0.000 description 7
- 235000002639 sodium chloride Nutrition 0.000 description 7
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- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 6
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- 229910000521 B alloy Inorganic materials 0.000 description 5
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- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
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- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
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- 238000006467 substitution reaction Methods 0.000 description 2
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- 229910000859 α-Fe Inorganic materials 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910002546 FeCo Inorganic materials 0.000 description 1
- 229910019791 Mg3B2 Inorganic materials 0.000 description 1
- 229910026161 MgAl2O4 Inorganic materials 0.000 description 1
- WRSVIZQEENMKOC-UHFFFAOYSA-N [B].[Co].[Co].[Co] Chemical compound [B].[Co].[Co].[Co] WRSVIZQEENMKOC-UHFFFAOYSA-N 0.000 description 1
- MHIHMSLBLJXMFH-UHFFFAOYSA-N [C].[Fe].[Co] Chemical compound [C].[Fe].[Co] MHIHMSLBLJXMFH-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- ZDVYABSQRRRIOJ-UHFFFAOYSA-N boron;iron Chemical compound [Fe]#B ZDVYABSQRRRIOJ-UHFFFAOYSA-N 0.000 description 1
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 description 1
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- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
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- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Abstract
The application provides a magnetic tunnel junction structure and a magnetic random access memory, wherein the magnetic tunnel junction structure comprises a barrier layer formed by a sub-atomic layer contained in magnesium oxide. By the design of the magnesium oxide containing the sub-atomic layer, the stable and sufficient tunneling magnetic resistance rate is kept while the resistance area product is reduced under the condition that the thickness of the barrier layer is not reduced, and the improvement of the reading/writing performance of the MRAM circuit and the manufacture of the subminiature MRAM circuit are greatly facilitated.
Description
Technical Field
The present invention relates to the field of memory technologies, and in particular, to a magnetic tunnel junction structure and a magnetic random access memory.
Background
Magnetic Random Access Memory (MRAM) in a Magnetic Tunnel Junction (MTJ) having Perpendicular Anisotropy (PMA), as a free layer for storing information, has two magnetization directions in a vertical direction, that is: upward and downward, respectively corresponding to "0" and "1" or "1" and "0" in binary, in practical application, the magnetization direction of the free layer will remain unchanged when reading information or leaving empty; during writing, if a signal different from the existing state is input, the magnetization direction of the free layer will be flipped by one hundred and eighty degrees in the vertical direction. The ability of the magnetization direction of the free layer of the magnetic random access Memory to remain unchanged is called data retention capability or thermal stability, and is required to be different in different application situations, for a typical Non-volatile Memory (NVM), for example: the data storage capacity is required to be capable of storing data for at least ten years at 125 ℃ or even 150 ℃, and the data retention capacity or the thermal stability is reduced when external magnetic field overturning, thermal disturbance, current disturbance or reading and writing are carried out for multiple times.
In order to increase the storage density of MRAM and meet the circuit requirements of CMOS with higher technology node, the Critical Dimension (CD) of the magnetic tunnel junction is smaller and smaller, and correspondingly, the Resistance Area Product (RA) of the magnetic tunnel junction is also smaller and smaller. As the critical dimensions of the magnetic tunnel decrease, a drastic degradation of the thermal stability factor of the magnetic tunnel junction is observed. In order to increase the thermal stability factor of the ultra-small MRAM cell device, the effective perpendicular anisotropy energy density may be increased by reducing the thickness of the free layer, adding or changing the free layer into a material with a low saturation magnetic susceptibility, and so on, thereby maintaining a higher thermal stability factor, but the Tunneling Magnetoresistance Ratio (TMR) of the magnetic Tunnel junction may be reduced, thereby increasing the error rate of the memory read operation. Moreover, due to the low barrier layer thickness, the Breakdown (BD) voltage is also reduced, which may reduce the endurance of the MRAM device.
By using doped [ Mg1-xMx]Methods for fabricating O barrier layers have been proposed (AIP ADVANCES 8,055905, 055905(2018)), where M is a transition metal such as Cr, Ru, Ta, etc., in an amount of 10%. However, the experimental results show thatThe TMR value is greatly reduced. The barrier layer is co-sputtering (co-sputtering) coated or alloy target coated to form mixed oxide or polycrystal [ Mg ] of multiple metal element alloy1-xMx]O, it is difficult to form a single crystal structure [ Mg ] required to have a high TMR1-xMx]O。
Disclosure of Invention
In order to solve the above-mentioned problems, an object of the present invention is to provide a magnetic tunnel junction structure and a magnetic random access memory.
The purpose of the application and the technical problem to be solved are realized by adopting the following technical scheme.
According to the present application, a magnetic tunnel junction structure includes, from top to bottom, a Capping Layer (CL), a Free Layer (FL), a Barrier Layer (TBL), a Reference Layer (RL), a lattice Breaking Layer (CBL), a antiferromagnetic Anti-ferromagnetic Layer (SyAF), and a Seed Layer (Seed Layer; SL), wherein the Barrier Layer is a crystalline structure and is formed of a magnesium oxide Layer containing a sub-atomic Layer.
The technical problem solved by the application can be further realized by adopting the following technical measures.
In an embodiment of the application, the sub-atomic layer is embedded between or on one side of the magnesium oxide layer.
In an embodiment of the present application, the sub-atomic layer is formed of zinc, copper, gold, silver, aluminum, nickel, cobalt, iron, tungsten, or a combination thereof, and has a thickness of 0.05 nm to 0.15 nm.
In an embodiment of the present application, the barrier layer is formed by a triple-layered sputtering coating of magnesium oxide/M/magnesium oxide, wherein M is formed by zn, cu, au, ag, al, ni, co, fe, w, or a combination thereof, and the total thickness of the barrier layer is between 0.5 nm and 1.5 nm.
In one embodiment of the present application, a high temperature anneal is performed after sputter coating to form magnesium having a mineral salt crystal structure (also called rock salt crystal structure)1-xMx]Oxygen, wherein the (001) crystal direction of the mineral salt crystal structure is parallel to the film plane, and M atoms replace a portion of the magnesium atoms to form the barrier layer comprising a subatomic layer of the mineral salt structure in the magnesium oxide layer.
In an embodiment of the present application, the capping layer includes a double-layer structure of a first capping sublayer and a second capping sublayer, the first capping sublayer is made of a non-magnetic metal oxide, and the second capping layer is formed of a magnetic and a non-magnetic metal or a combination thereof.
In an embodiment of the present application, the thickness of the first capping sublayer is between 0.6 nm and 1.5 nm, and the non-magnetic metal oxide includes magnesium oxide, magnesium zinc oxide, aluminum oxide, magnesium nitride, magnesium boron oxide, or magnesium aluminum oxide.
In an embodiment of the present application, the second cap sub-layer is made of a multi-layer material of tungsten, zinc, aluminum, copper, calcium, titanium, vanadium, chromium, molybdenum, magnesium, niobium, ruthenium, hafnium, platinum, or a combination thereof, and the thickness of the second cap sub-layer is between 0.5 nm and 3.0 nm.
It is another objective of the present invention to provide a magnetic random access memory, wherein the storage unit comprises any one of the foregoing magnetic tunnel junction structures, a top electrode disposed above the magnetic tunnel junction structure, and a bottom electrode disposed below the magnetic tunnel junction structure.
In an embodiment of the present application, an annealing operation is performed at a temperature greater than 300 ℃ for at least 30 minutes after the bottom electrode, seed layer, antiferromagnetic layer, lattice partition layer, reference layer, barrier layer, free layer, capping layer, and top electrode are deposited.
By the design of the magnesium oxide containing the sub-atomic layer, the stable and sufficient tunneling magnetic resistance rate is kept while the resistance area product is reduced under the condition that the thickness of the barrier layer is not reduced, and the improvement of the reading/writing performance of the MRAM circuit and the manufacture of the subminiature MRAM circuit are greatly facilitated.
Drawings
FIG. 1 is a diagram illustrating an exemplary MRAM cell structure;
FIG. 2 is a diagram illustrating a magnetic memory cell structure of an embodiment of the magnetic random access memory of the present application;
FIGS. 3A and 3B are graphs showing the atomic band gap and (ionic) radius periodicities of MgO and MO in an example of an MgO barrier layer containing a sub-atomic layer;
FIG. 4A is a schematic diagram of a pre-anneal structure of a MgO barrier layer containing a sub-atomic layer according to an embodiment of the present application;
fig. 4B is a schematic structure diagram of the annealed MgO barrier layer containing a sub-atomic layer according to the embodiment of the present application.
Detailed Description
Refer to the drawings wherein like reference numbers refer to like elements throughout. The following description is based on illustrated embodiments of the application and should not be taken as limiting the application with respect to other embodiments that are not detailed herein.
The following description of the various embodiments refers to the accompanying drawings, which illustrate specific embodiments that can be used to practice the present application. In the present application, directional terms such as "up", "down", "front", "back", "left", "right", "inner", "outer", "side", and the like are merely referring to the directions of the attached drawings. Accordingly, the directional terminology is used for purposes of illustration and understanding, and is in no way limiting.
The terms "first," "second," "third," and the like in the description and in the claims of the present application and in the above-described drawings, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It should be understood that the objects so described are interchangeable under appropriate circumstances. Furthermore, the terms "include" and "have," as well as other similar variations of embodiments, are intended to cover non-exclusive inclusions.
The terminology used in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the concepts of the present application. Unless the context clearly dictates otherwise, expressions used in the singular form encompass expressions in the plural form. In the present specification, it will be understood that terms such as "including," "having," and "containing" are intended to specify the presence of the features, integers, steps, acts, or combinations thereof disclosed in the specification, and are not intended to preclude the presence or addition of one or more other features, integers, steps, acts, or combinations thereof. Like reference symbols in the various drawings indicate like elements.
The drawings and description are to be regarded as illustrative in nature, and not as restrictive. In the drawings, elements having similar structures are denoted by the same reference numerals. In addition, the size and thickness of each component shown in the drawings are arbitrarily illustrated for understanding and ease of description, but the present application is not limited thereto.
In the drawings, the range of configurations of devices, systems, components, circuits is exaggerated for clarity, understanding, and ease of description. It will be understood that when an element is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present.
In addition, in the description, unless explicitly described to the contrary, the word "comprise" will be understood to mean that the recited components are included, but not to exclude any other components. Further, in the specification, "on.
To further illustrate the technical means and effects of the present invention adopted to achieve the predetermined objects, the following detailed description is given to a magnetic tunnel junction structure and a magnetic random access memory according to the present invention with reference to the accompanying drawings and specific embodiments.
FIG. 1 is a diagram of an exemplary MRAM cell structure. The magnetic memory cell structure includes a multi-layer structure formed by at least a Bottom Electrode (BE) 110, a Magnetic Tunnel Junction (MTJ)200, and a Top Electrode (Top Electrode) 310.
In some embodiments, the bottom electrode 110 is titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), ruthenium (Ru), tungsten (W), tungsten nitride (WN), or combinations thereof; the top electrode 310 is made of titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), tungsten (W), tungsten nitride (WN), or a combination thereof. The magnetic memory cell structure is typically implemented by Physical Vapor Deposition (PVD), and is typically planarized after the bottom electrode 110 is deposited to achieve surface flatness for the magnetic tunnel junction 200.
In some embodiments, the magnetic tunnel junction 200 includes, from top to bottom, a Capping Layer (CL) 270, a Free Layer (FL) 260, a Barrier Layer (Tunnel Barrier, TBL)250, a Reference Layer (RL) 240, a lattice Breaking Layer (CBL) 230, an antiferromagnetic Anti-ferromagnetic Layer (SyAF) 220, and a Seed Layer (Seed Layer; SL) 210.
In some embodiments, as shown in fig. 1, the barrier layer is generally formed of a thin MgO layer, and the free layer 260 is composed of a CoFeB (cobalt iron boron alloy), CoFeB (iron Fe/cobalt iron boron alloy), CoFeB (cobalt iron boron alloy)/CoFeB/(tantalum Ta, tungsten W, one of Mo or Hf), CoFeB (cobalt iron boron alloy). In order to increase the storage density of MRAM and meet the circuit requirements of CMOS with higher technology node, the Critical Dimension (CD) of the magnetic tunnel junction is smaller and smaller, and correspondingly, the Resistance Area Product (RA) of the magnetic tunnel junction is also smaller and smaller. At the same time as the critical dimensions are reduced, it has been found that the thermal stability factor of the magnetic tunnel junction is drastically deteriorated. In order to increase the thermal stability factor of the ultra-small MRAM cell device, the effective perpendicular anisotropy energy density may be increased by reducing the thickness of the free layer, adding or changing the free layer into a material with a low saturation magnetic susceptibility, and so on, thereby maintaining a higher thermal stability factor, but the Tunneling Magnetoresistance Ratio (TMR) of the magnetic Tunnel junction may be reduced, thereby increasing the error rate of the memory read operation. Moreover, due to the low barrier layer thickness, the Breakdown (BD) voltage is also reduced, which may reduce the endurance of the MRAM device. .
FIG. 2 is a diagram illustrating a magnetic memory cell structure of an embodiment of the magnetic random access memory of the present application; FIG. 3 is a table showing the atomic gap width atoms and (ion) radius periods of MgO and MO in an example of an MgO barrier layer containing a sub-atomic layer; fig. 4A and 4B are schematic structural diagrams of the MgO barrier layer including the sub-atomic layer before/after annealing according to the embodiment of the present application. The prior art also refers to fig. 1 to facilitate understanding.
In one embodiment of the present application, as shown in fig. 2, a magnetic tunnel junction structure 200 includes a Capping Layer (CL) 270, a Free Layer (FL) 260, a Barrier Layer (Tunneling Barrier, TBL)250, a Reference Layer (RL) 240, a lattice Breaking Layer (CBL) 230, an Anti-ferromagnetic Layer (SyAF) 220, and a Seed Layer (Seed Layer; SL)210, wherein the Barrier Layer 250 is a crystalline structure and is formed of a magnesium oxide Layer containing a sub-atomic Layer.
In an embodiment of the present application, the sub-atomic layer is embedded between or on one side of the magnesium oxide layer MgO.
In an embodiment of the present application, the sub-atomic layer is formed of Zn, Cu, Au, Ag, Al, Ni, Co, Fe, W, or a combination thereof, and has a thickness of 0.05 nm to 0.15 nm.
In some embodiments, the barrier layer 250 is fabricated by sputtering a triple stack of MgO/M/MgO, wherein M is formed of Zn, Cu, Au, Ag, Al, Ni, Co, Fe, W, or a combination thereof, and the total thickness of the barrier layer 250 is between 0.5 nm and 1.5 nm.
In one embodiment of the present application, a sputter coating is followed by a high temperature anneal to form [ Mg ] with a mineral salt crystal structure1-xMx]O, wherein the (001) crystal direction of the mineral salt crystal structure is parallel to the film plane, M atoms replace a portion of the magnesium Mg atoms to form the barrier layer 250 comprising a subatomic layer of the mineral salt structure in a magnesium oxide, MgO, layer. The M atoms function as a catalyst for the transition from amorphous to crystalline during high temperature annealing. Superior effect of MgO barrier layer containing sub-atomic layerTo reduce the area product of Resistance (RA) without reducing the thickness of the barrier layer 250, the TMR remains substantially unchanged. The method is very beneficial to improving the read/write performance of the MRAM circuit and is very beneficial to manufacturing the ultra-miniature MRAM circuit.
As shown in FIGS. 3A and 3B, in some embodiments, Zn is present in the periodic table of atomic (ionic) radii2+，Cu2+，Ni2 +，Co2+，Fe2+，Ag2+，Au3+，W6+And Mg2+This is not so different, and it provides the possibility of replacing Mg in MgO (001) in the Face Centered Cubic (FCC) structure with Zn, Cu, Ni, Co, Fe, Ag, Au, W. At the same time, due to Zn2+，Cu2+，Ni2+，Co2+，Fe2+And O2-The difference is very large, and in the structure of MgO (001), the probability of Zn, Cu, Ni, Co, Fe substituting for O or inlaying the gap between Mg and O is greatly reduced or not possible at all.
As shown in fig. 4A and 4B, the barrier layer 250 of MgO containing sub-atomic layer has a thickness of 0.5 nm to 1.5 nm, and is formed by a three-layered MgO/M/MgO sputtering coating, wherein the material M is Zn, Cu, Au, Ag, Al, Ni, Co, Fe, W, or a combination thereof, and the sub-atomic layer has a thickness of 0.05 nm to 0.15 nm. After sputtering and coating, the MgO/M/MgO is in an amorphous structure; after high temperature annealing, [ Mg ] having a rock-salt crystal structure is formed1-xMx]The O, (001) crystal orientation is parallel to the film plane, and M atoms replace a portion of Mg atoms to form a barrier layer of MgO (001) containing a subatomic layer of a mineral-salt structure (rock-salt). The M atoms function as a catalyst for the transition from amorphous to crystalline during high temperature annealing. Further, a rapid thermal anneal may optionally be performed after the barrier layer 250 is deposited, preferably at a temperature greater than 350 c for a time greater than 5 minutes.
In an embodiment of the present application, the cover layer 270 includes a double-layer structure of a first cover sub-layer 271 and a second cover sub-layer 272; the first cover sublayer 271 is made of nonmagnetic materialA non-magnetic metal oxide with a thickness of 0.6-1.5 nm, wherein the non-magnetic metal oxide comprises MgO, MgZnO, ZnO, Al2O3MgN, Mg boron oxide, Mg3B2O6Or magnesium aluminum oxide MgAl2O4(ii) a The second cap sub-layer 272 is made of a multi-layer material of W, Zn, Al, Cu, Ca, Ti, V, Cr, Mo, Mg, Nb, Ru, Hf, Pt, or combinations thereof, and has a total thickness of 0.5 nm to 10.0 nm.
Referring to fig. 2 to 4B, in an embodiment of the present application, a memory cell of a magnetic random access memory includes any one of the above-described magnetic tunnel junction 200 structures, a top electrode 310 disposed above the magnetic tunnel junction 200 structure, and a bottom electrode 110 disposed below the magnetic tunnel junction 200 structure.
In an embodiment of the present application, the material of the seed layer 210 of the magnetic tunnel junction 200 is one or a combination of Ti, TiN, Ta, TaN, W, WN, Ru, Pt, Cr, CrCo, Ni, CrNi, CoB, FeB, CoFeB, etc. In some embodiments, the seed layer 21 may be selected from one of tantalum Ta/ruthenium Ru, tantalum Ta/platinum Pt/ruthenium Ru, and the like.
The antiferromagnetic layer 220, formally known as an antiparallel ferromagnetic super-lattice (Anti-Parallel ferromagnetic super-lattice) layer 220 is also known as a Synthetic antiferromagnetic-ferromagnetic (SyAF) layer. Typically from [ cobalt Co/platinum Pt ]]nCo/(Ru, Ir, Rh) and Co/Pt]nCo/(Ru, Ir, Rh)/(Co, Co [ Co/Pt ] Co]m) [ cobalt Co/palladium Pd ]]nCo/(Ru, Ir, Rh) and Co/Pt]nCo/(Ru, Ir, Rh)/(Co, Co [ Co/Pt ] Co]m) [ cobalt Co/nickel Ni ]]nCo/(Ru, Ir, Rh) or [ Co/Ni ]]nCo/(Ru, Ir, Rh)/(Co, Co [ Ni/Co ]]m) A superlattice composition, wherein n>m.gtoreq.0, preferablyThe monolayer thickness of cobalt (Co) and platinum (Pt) is below 0.5 nm, such as: 0.10 nm, 0.15 nm, 0.20 nm, 0.25 nm, 0.30 nm, 0.35 nm, 0.40 nm, 0.45 nm, or 0.50 nm …. In some embodiments, the thickness of each layer structure of the antiferromagnetic layer 220 is the same or different. The antiferromagnetic layer 220 has a strong perpendicular anisotropy (PMA).
In an embodiment of the present application, the reference layer 240 has a magnetic polarization invariance under ferromagnetic coupling of the antiferromagnetic layer 220. The reference layer 240 is made of one or a combination of cobalt Co, iron Fe, nickel Ni, cobalt ferrite CoFe, cobalt boride CoB, iron boride FeB, cobalt iron carbon CoFeC, and cobalt iron boron alloy CoFeB, and the thickness of the reference layer 25 is between 0.5 nm and 1.5 nm.
Since the antiferromagnetic layer 220 has a Face Centered Cubic (FCC) crystal structure and the reference layer 240 has a Body Centered Cubic (BCC) crystal structure, the lattices are not matched, in order to realize the transition and ferromagnetic coupling from the antiferromagnetic layer 220 to the reference layer 240, a lattice-blocking layer 230 is typically added between two layers of materials, the material of the lattice-blocking layer 230 is one or a combination of Ta, W, Mo, Hf, Fe, Co, including but not limited to Co (Ta, W, Mo, or Hf), Fe (FeCo (Ta, W, Mo, or Hf), or Fe-b (Ta, W, Mo, or Hf), and the thickness of the lattice-blocking layer 230 is between 0.1 nm and 0.5 nm.
In an embodiment of the present application, the free layer 260 has a variable magnetic polarization, and is made of a single-layer structure selected from CoB, FeB, CoFeB, or a double-layer structure of CoFe/CoFeB, or CoFeB/(W, Mo, V, Nb, Cr, Hf, Ti, Zr, Ta, Sc, Y, Zn, Ru, Os, Rh, Ir, Pd, and/or Pt)/CoFeB, CoFeB/(W, Mo, V, Nb, Cr, Hf, Ti, Zr, Ta, Sc, Y, Zn, Ru, Hf, Os, Rh, Ir, Sc, Y, Zn, Ru, Os, Rh, Ir, Pd, and/or Pt)/CoFeB, or a three-layer structure of Fe/Co/(W, Mo, V, Nb, Cr, Nb, Hf, Ti, Zr, Ta, Nb, Y, Zn, Ru, Os, Mo, V, Nb, or Pt)/CoFeB, A four-layer structure of chromium Cr, hafnium Hf, titanium Ti, zirconium Zr, tantalum Ta, scandium Sc, yttrium Y, zinc Zn, ruthenium Ru, osmium Os, rhodium Rh, iridium Ir, palladium Pd and/or platinum Pt)/cobalt ferroboron, cobalt ferrite/cobalt ferroboron/(tungsten W, molybdenum Mo, vanadium V, niobium Nb, chromium Cr, hafnium Hf, titanium Ti, zirconium Zr, tantalum Ta, scandium Sc, yttrium Y, zinc Zn, ruthenium Ru, osmium Os, rhodium Rh, iridium Ir, palladium Pd and/or platinum Pt)/cobalt ferroboron; the thickness of the free layer 260 is between 1.2 nm and 3.0 nm.
In an embodiment of the present application, after all the film layers are deposited, an annealing process is performed on the magnetic tunnel junction 200 at a temperature of not less than 300 ℃ for not less than 30 minutes, so that the reference layer 240 and the free sub-layer 260 are transformed from an amorphous phase to a body-centered cubic (BCC) crystal structure.
According to the magnetic tunnel junction unit structure, due to the design that the magnesium oxide contains the sub-atomic layer, under the condition that the thickness of the barrier layer is not reduced, the resistance area product is reduced, meanwhile, the stable and sufficient tunneling magnetic resistance rate is kept, and the improvement of the reading/writing performance of an MRAM circuit and the manufacture of an ultra-small MRAM circuit are greatly facilitated.
The terms "in one embodiment of the present application" and "in various embodiments" are used repeatedly. This phrase generally does not refer to the same embodiment; it may also refer to the same embodiment. The terms "comprising," "having," and "including" are synonymous, unless the context dictates otherwise.
Although the present application has been described with reference to specific embodiments, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the application, and all changes, substitutions and alterations that fall within the spirit and scope of the application are to be understood as being covered by the following claims.
Claims (10)
1. A magnetic tunnel junction structure of a magnetic random access memory is arranged in a magnetic random access memory unit and comprises a covering layer, a free layer, a barrier layer, a reference layer, a lattice partition layer, an anti-ferromagnetic layer and a seed layer from top to bottom.
2. The magnetic tunnel junction structure of claim 1 wherein said sub-atomic layer is embedded between or on one side of said magnesium oxide layers.
3. The magnetic tunnel junction structure of claim 1 wherein the sub-atomic layer is formed of zinc, copper, gold, silver, aluminum, nickel, cobalt, iron, tungsten, or combinations thereof, and has a thickness of between 0.05 nm and 0.15 nm.
4. The mtj structure of claim 1 wherein the barrier layer is formed by a triple-stack of mgo/M/mgo sputtering, wherein M is formed of zn, cu, au, ag, al, ni, co, fe, w, or combinations thereof, and the total thickness of the barrier layer is between 0.5 nm and 1.5 nm.
5. The magnetic tunnel junction structure of magnetic random access memory of claim 4 wherein the sputter coating is followed by a high temperature anneal to form [ magnesium ] having a mineral salt crystal structure1-xMx]Oxygen, wherein the (001) crystal direction of the mineral salt crystal structure is parallel to the film plane, and M atoms replace a portion of the magnesium atoms to form the barrier layer comprising a sub-atomic layer of the mineral salt crystal structure in the magnesium oxide layer.
6. The magnetic tunnel junction structure of claim 1 wherein the capping layer comprises a bilayer of a first capping sublayer and a second capping sublayer, the first capping sublayer being made of a non-magnetic metal oxide and the second capping layer being formed of a magnetic and a non-magnetic metal or a combination thereof.
7. The mtj structure of claim 6, wherein the first capping sublayer has a thickness of between 0.6 nm and 1.5 nm, and the nonmagnetic metal oxide comprises magnesium oxide, magnesium zinc oxide, aluminum oxide, magnesium nitride, magnesium boron oxide, or magnesium aluminum oxide.
8. The mtj structure of claim 6, wherein the second capping sublayer is made of a multilayer material of w, zn, al, cu, ca, ti, v, cr, mo, mg, nb, ru, hf, pt, or a combination thereof, and has a thickness of 0.5 nm to 3.0 nm.
9. The magnetic tunnel junction structure of claim 1 wherein the magnetic tunnel junction is deposited followed by an annealing process at a temperature of not less than 300 ℃ for a time of not less than 30 minutes.
10. A magnetic random access memory comprising the magnetic tunnel junction structure of any of claims 1-9, a top electrode disposed above the magnetic tunnel junction structure, and a bottom electrode disposed below the magnetic tunnel junction structure.
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