CN112864313B - Magnetic tunnel junction structure of magnetic random access memory - Google Patents

Magnetic tunnel junction structure of magnetic random access memory Download PDF

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CN112864313B
CN112864313B CN201911195918.5A CN201911195918A CN112864313B CN 112864313 B CN112864313 B CN 112864313B CN 201911195918 A CN201911195918 A CN 201911195918A CN 112864313 B CN112864313 B CN 112864313B
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tunnel junction
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magnetic tunnel
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CN112864313A (en
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张云森
郭一民
陈峻
肖荣福
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Shanghai Information Technologies Co ltd
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Abstract

The application provides a magnetic tunnel junction structure of magnetic random access memory, magnetic tunnel junction structure sets up the synthetic antiferromagnetic layer of strength that the antiferromagnetic coupling layer combines the two/three sublayers of single/two ferromagnetic layers, and cooperation antiferromagnetic coupling layer and lattice partition layer realize the lattice transition and the strong ferromagnetic coupling between synthetic antiferromagnetic layer to the reference layer of strength, are favorable to the magnetic tunnel junction unit in the magnetism, the promotion of electricity and yield and the reduction of device.

Description

Magnetic tunnel junction structure of magnetic random access memory
Technical Field
The present invention relates to the field of memory technologies, and in particular, to a magnetic tunnel junction structure of a magnetic random access memory.
Background
Magnetic Random Access Memory (MRAM) in a Magnetic Tunnel Junction (MTJ) having Perpendicular Anisotropy (PMA), as a free layer for storing information, has two magnetization directions in a vertical direction, that is: upward and downward, respectively corresponding to "0" and "1" or "1" and "0" in binary, in practical application, the magnetization direction of the free layer will remain unchanged when reading information or leaving empty; during writing, if a signal different from the existing state is input, the magnetization direction of the free layer will be flipped by one hundred and eighty degrees in the vertical direction. The ability of a magnetic random access Memory to maintain the magnetization direction of the free layer constant is called Data Retention (Data Retention) or Thermal Stability (Thermal Stability), which is not required in different application scenarios, and for a typical Non-volatile Memory (NVM), for example: the method is applied to the field of automotive electronics, the requirement of data storage capacity is that the data can be stored for at least 10 years at 125 ℃ or even 150 ℃, and the reduction of data retention capacity or thermal stability can be caused when external magnetic field is turned over, thermal disturbance, current disturbance or reading and writing are carried out for many times, so that the pinning of a Reference Layer (RL) is usually realized by adopting a superlattice of a strong Synthetic Anti-ferromagnetic Layer (SyAF). Various techniques are used by current manufacturers to achieve lattice matching of the strongly synthetic antiferromagnetic layer to the reference layer, but "demagnetisation" is still a common occurrence.
Disclosure of Invention
In order to solve the above technical problems, an object of the present invention is to provide a magnetic tunnel junction structure of a magnetic random access memory, which realizes reference layer pinning, lattice transformation, and reduction/avoidance of "desferrimagnetic coupling".
The purpose of the application and the technical problem to be solved are realized by adopting the following technical scheme.
According to the magnetic tunnel junction structure of the magnetic random access memory provided by the present application, the structure from top to bottom includes a Free Layer (Free Layer; FL), a Barrier Layer (Tunneling Barrier, TB), a Reference Layer (RL), a lattice Breaking Layer (CBL), a Synthetic Anti-ferromagnetic Layer (SyAF), and a Seed Layer (Seed Layer; SL), wherein the Synthetic Anti-ferromagnetic Layer includes: a first ferromagnetic layer formed of a transition metal having a face-centered crystalline structure in combination with a ferromagnetic material; and an antiferromagnetic coupling layer disposed on the first ferromagnetic layer and formed of a transition metal material capable of forming antiferromagnetic coupling; wherein the antiferromagnetic coupling layer combines with the lattice-partitioning layer for lattice-switching and antiferromagnetic coupling between the first ferromagnetic layer and the reference layer to effect pinning of the magnetization vector of the reference layer; wherein the total thickness of the first ferromagnetic layer is 0.5 nm-4.0 nm, and the material of the first ferromagnetic layer is [ Co/AgPt ]] n /Co、[Co/AgPd] n /Co、[Co/AgNi] n /Co、[Co/AuPt] n /Co、[Co/AuPd] n /Co、[Co/AuNi] n /Co、[Co/CuPt] n /Co、[Co/CuPd] n /Co、[Co/CuNi] n /Co、[Co/Ag/Pt] n /Co、[Co/Ag/Pd] n /Co、[Co/Ag/Ni] n /Co、[Co/Au/Pt] n /Co、[Co/Au/Pd] n /Co、[Co/Au/Ni] n /Co、[Co/Cu/Pt] n /Co、[Co/Cu/Pd] n /Co、[Co/Cu/Ni] n /Co、[Fe/AgPt] n /Fe、[Fe/AgPd] n /Fe、[Fe/AgNi] n /Fe、[Fe/AuPt] n /Fe、[Fe/AuPd] n /Fe、[Fe/AuNi] n /Fe、[Fe/CuPt] n /Fe、[Fe/CuPd] n /Fe、[Fe/CuNi] n /Fe、[Fe/Ag/Pt] n /Fe、[Fe/Ag/Pd] n /Fe、[Fe/Ag/Ni] n /Fe、[Fe/Au/Pt] n /Fe、[Fe/Au/Pd] n /Fe、[Fe/Au/Ni] n /Fe、[Fe/Cu/Pt] n /Fe、[Fe/Cu/Pd] n /Fe、[Fe/Cu/Ni] n /Fe、[CoFe/AgPt] n /CoFe、[CoFe/AgPd] n /CoFe、[CoFe/AgNi] n /CoFe、[CoFe/AuPt] n /CoFe、[CoFe/AuPd] n /CoFe、[CoFe/AuNi] n /CoFe、[CoFe/CuPt] n /CoFe、[CoFe/CuPd] n /CoFe、[CoFe/CuNi] n /CoFe、[CoFe/Ag/Pt] n /CoFe、[CoFe/Ag/Pd] n /CoFe、[CoFe/Ag/Ni] n /CoFe、[CoFe/Au/Pt] n /CoFe、[CoFe/Au/Pd] n /CoFe、[CoFe/Au/Ni] n /CoFe、[CoFe/Cu/Pt] n /CoFe、[CoFe/Cu/Pd] n /CoFe、[CoFe/Cu/Ni] n CoFe, coAgPt, coAgPd, coAgNi, feAgPt, feAgPd, feAgNi, coFeAgPt, coFeAgPd, coFeAgNi, coAuPt, coAuPd, coAuNi, feAuPt, feAuPd, feAuNi, coFeAuPt, coFeAuPd, coFeAuNi, coCuPt, coCuPd, coCuNi, feCuPt, feCuPd, feCuNi, coFeCuPt, coFeCuPd or CoFeCuNi, where n is 2 or more.
The technical problem solved by the application can be further realized by adopting the following technical measures.
In an embodiment of the present application, the ferromagnetic layer further comprises a second ferromagnetic layer disposed on the antiferromagnetic coupling layer and formed of a transition metal having a face-centered crystal structure in combination with a ferromagnetic material; wherein the antiferromagnetic coupling of the second ferromagnetic layer and the first ferromagnetic layer is achieved through the antiferromagnetic coupling layer; effecting ferromagnetic coupling of a reference layer to the second ferromagnetic layer through the lattice-partitioning layer to effect pinning of the reference layer magnetization vector; the total thickness of the second ferromagnetic layer is 0.5 nm-2.0 nm, and the second ferromagnetic layer is made of Co, fe, coFe, co/[ Pt/Co ] material] m 、Co/[Pd/Co] m 、Co/[Ni/Co] m 、Fe/[Pt/Fe] m 、Fe/[Pd/Fe] m 、Fe/[Ni/Fe] m 、CoFe/[Pt/CoFe] m 、CoFe/[Pd/CoFe] m 、CoFe/[Ni/CoFe] m 、Co/[AgPt/Co] m 、Co/[AgPd/Co] m 、Co/[AgNi/Co] m 、Co/[AuPt/Co] m 、Co/[AuPd/Co] m 、Co/[AuNi/Co] m 、Co/[CuPt/Co] m 、Co/[CuPd/Co] m 、Co/[CuNi/Co] m 、Co/[Ag/Pt/Co] m 、Co/[Ag/Pd/Co] m 、Co/[Ag/Ni/Co] m 、Co/[Au/Pt/Co] m 、Co/[Au/Pd/Co] m 、Co/[Au/Ni/Co] m 、Co/[Cu/Pt/Co] m 、Co/[Cu/Pd/Co] m 、Co/[Cu/Ni/Co] m 、Fe/[AgPt/Fe] m 、Fe/[AgPd/Fe] m 、Fe/[AgNi/Fe] m 、Fe/[AuPt/Fe] m 、Fe/[AuPd/Fe] m 、Fe/[AuNi/Fe] m 、Fe/[CuPt/Fe] m 、Fe/[CuPd/Fe] m 、Fe/[CuNi/Fe] m 、Fe/[Ag/Pt/Fe] m 、Fe/[Ag/Pd/Fe] m 、Fe/[Ag/Ni/Fe] m 、Fe/[Au/Pt/Fe] m 、Fe/[Au/Pd/Fe] m 、Fe/[Au/Ni/Fe] m 、Fe/[Cu/Pt/Fe] m 、Fe/[Cu/Pd/Fe] m 、Fe/[Cu/Ni/Fe] m 、CoFe/[AgPt/CoFe] m 、CoFe/[AgPd/CoFe] m 、CoFe/[AgNi/CoFe] m 、CoFe/[AuPt/CoFe] m 、CoFe/[AuPd/CoFe] m 、CoFe/[AuNi/CoFe] m 、CoFe/[CuPt/CoFe] m 、CoFe/[CuPd/CoFe] m 、CoFe/[CuNi/CoFe] m 、CoFe/[Ag/Pt/CoFe] m 、CoFe/[Ag/Pd/CoFe] m 、CoFe/[Ag/Ni/CoFe] m 、CoFe/[Au/Pt/CoFe] m 、CoFe/[Au/Pd/CoFe] m 、CoFe/[Au/Ni/CoFe] m 、CoFe/[Cu/Pt/CoFe] m 、CoFe/[Cu/Pd/CoFe] m 、CoFe/[Cu/Ni/CoFe] m CoAgPt, coAgPd, coAgNi, feAgPt, feAgPd, feAgNi, coFeAgPt, coFeAgPd, coFeAgNi, coAuPt, coAuPd, coAuNi, feAuPt, feAuPd, feAuNi, coFeAuPt, coFeAuPd, coFeAuNi, coCuPt, coCuPd, coCuNi, feCuPt, feCuPd, feCuNi, coFeCuPt, coFeCuPd or CoFeCuNi, wherein m is more than or equal to 1.
In one embodiment of the present application, among AgPt, agPd, agNi, auPt, auPd, auNi, cuPt, cuPd, cuNi, coAgPt, coAgPd, coAgNi, feAgPt, feAgPd, feAgNi, coFeAgPt, coFeAgPd, coFeAgNi, coAuPt, coAuPd, coAuNi, feAuPt, feAuPd, feAuNi, coFeAuPt, coFeAuPd, coCuPt, coCuPd, coCuNi, feCuPt, feCuPd, feCuNi, feCuPt, feCuNi, feCuPt, coFeCuPt, coFeCuPd, or CoFeCuNi, the atomic percentages of Ag, au and Cu do not exceed 10%.
In one embodiment of the present application, the first ferromagnetic layer or the second ferromagnetic layer is deposited at a high temperature, which does not exceed 400 ℃; after deposition, it is optionally cooled to room temperature or ultra-low temperature.
In an embodiment of the present application, the antiferromagnetic coupling layer is made of Ru, ir or Rh, and has a thickness of 0.3nm to 1.5nm. Further, in the strongly synthetic antiferromagnetic layer having a tri-layer structure, the antiferromagnetic coupling layer may be selected from a first RKKY oscillation peak (0.3 nm to 0.6 nm) of Ru, a second RKKY oscillation peak (0.7 nm to 0.9 nm) of Ru, or a first RKKY oscillation peak (0.3 nm to 0.5 nm) of Ir.
In one embodiment of the present application, an annealing process is performed on the magnetic tunnel junction to cause the reference layer and the free layer to transform from an amorphous structure to a body-centered cubic stacked crystal structure under the templating action of a face-centered cubic crystal structure barrier layer.
Co/[ AgPt/Co ] through first ferromagnetic layer] m Or similar structures, with a stronger perpendicular anisotropy (PMA), combined with an antiparallel effect of the magnetization vectors with the corresponding levels, whether tri-or bi-layer antiferromagnetic layers, allow better pinning of the Reference Layer (RL). The method is beneficial to the improvement of magnetism, electricity and yield of the magnetic random access memory and the further miniaturization of the device.
Drawings
FIG. 1 is a diagram illustrating a two-layer structure of a magnetic tunnel junction of an MRAM according to an embodiment of the present disclosure;
FIG. 2 is a schematic diagram of a three-layer structure of a magnetic tunnel junction of an MRAM according to an embodiment of the present disclosure.
Description of the symbols
10, a bottom electrode; 20, magnetic tunnel junction; 21, a seed layer; a strongly synthetic antiferromagnetic layer 22; 23, a lattice partition layer; 24 reference layer; 25, a barrier layer; 26, a free layer; 27: a cover layer; 30, a top electrode; 221 a first ferromagnetic layer; 222 antiferromagnetically coupling layer; 223 the second ferromagnetic layer.
Detailed Description
The following description of the embodiments refers to the accompanying drawings for illustrating the specific embodiments in which the invention may be practiced. In the present invention, directional terms such as "up", "down", "front", "back", "left", "right", "inner", "outer", "side", etc. refer to directions of the attached drawings. Accordingly, the directional terminology is used for purposes of illustration and understanding and is in no way limiting.
The drawings and description are to be regarded as illustrative in nature, and not as restrictive. In the drawings, elements having similar structures are denoted by the same reference numerals. In addition, the size and thickness of each component shown in the drawings are arbitrarily illustrated for understanding and ease of description, but the present invention is not limited thereto.
In the drawings, the range of configurations of devices, systems, components, circuits is exaggerated for clarity, understanding, and ease of description. It will be understood that when an element is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present.
In addition, in the description, unless explicitly described to the contrary, the word "comprise" will be understood to mean that the recited components are included, but not to exclude any other components. Further, in the specification, "on.
To further illustrate the technical means and effects of the present invention for achieving the predetermined objects, the following detailed description is given to a magnetic tunnel junction structure of a magnetic random access memory according to the present invention with reference to the accompanying drawings and embodiments.
FIG. 1 is a diagram illustrating a double-layer structure of a magnetic tunnel junction of a magnetic random access memory according to an embodiment of the present invention. FIG. 1 is a diagram illustrating a three-layer structure of a magnetic tunnel junction of a magnetic random access memory according to an embodiment of the present invention. The magnetic memory cell structure comprises a multi-layer structure formed by at least a bottom electrode 10, a magnetic tunnel junction 20 and a top electrode 30. The magnetic tunnel junction 20 includes, from top to bottom, a Free Layer (FL) 26, a Barrier Layer (TB) 25, a Reference Layer (RL) 24, a Crystal Breaking Layer (CBL) 23, a strongly Synthetic Anti-ferromagnetic Layer (SyAF) 22, and a Seed Layer (Seed Layer; SL) 21.
As shown in FIG. 1, in one embodiment of the present application, the strongly synthetic antiferromagnetic layer 22 includes a first ferromagnetic layer (1) disposed from bottom to top st Ferro-Magnetic Layer,1 st FML) 221 formed of a transition metal having a face-centered crystal structure in combination with a ferromagnetic material; and an Anti-ferromagnetic coupling Layer (AFCL) 222 disposed on the first ferromagnetic Layer 221 and formed of a transition metal material capable of forming an Anti-ferromagnetic coupling; wherein the antiferromagnetic coupling layer 222 combines with the lattice-blocking layer 23 for lattice-switching and antiferromagnetic coupling between the first ferromagnetic layer 221 and the reference layer 24 to achieve pinning of the magnetization vector of the reference layer 24; wherein the total thickness of the first ferromagnetic layer 221 is 0.5nm to 4.0nm, and the material of the first ferromagnetic layer 221 is [ Co/AgPt ]] n /Co、[Co/AgPd] n /Co、[Co/AgNi] n /Co、[Co/AuPt] n /Co、[Co/AuPd] n /Co、[Co/AuNi] n /Co、[Co/CuPt] n /Co、[Co/CuPd] n /Co、[Co/CuNi] n /Co、[Co/Ag/Pt] n /Co、[Co/Ag/Pd] n /Co、[Co/Ag/Ni] n /Co、[Co/Au/Pt] n /Co、[Co/Au/Pd] n /Co、[Co/Au/Ni] n /Co、[Co/Cu/Pt] n /Co、[Co/Cu/Pd] n /Co、[Co/Cu/Ni] n /Co、[Fe/AgPt] n /Fe、[Fe/AgPd] n /Fe、[Fe/AgNi] n /Fe、[Fe/AuPt] n /Fe、[Fe/AuPd] n /Fe、[Fe/AuNi] n /Fe、[Fe/CuPt] n /Fe、[Fe/CuPd] n /Fe、[Fe/CuNi] n /Fe、[Fe/Ag/Pt] n /Fe、[Fe/Ag/Pd] n /Fe、[Fe/Ag/Ni] n /Fe、[Fe/Au/Pt] n /Fe、[Fe/Au/Pd] n /Fe、[Fe/Au/Ni] n /Fe、[Fe/Cu/Pt] n /Fe、[Fe/Cu/Pd] n /Fe、[Fe/Cu/Ni] n /Fe、[CoFe/AgPt] n /CoFe、[CoFe/AgPd] n /CoFe、[CoFe/AgNi] n /CoFe、[CoFe/AuPt] n /CoFe、[CoFe/AuPd] n /CoFe、[CoFe/AuNi] n /CoFe、[CoFe/CuPt] n /CoFe、[CoFe/CuPd] n /CoFe、[CoFe/CuNi] n /CoFe、[CoFe/Ag/Pt] n /CoFe、[CoFe/Ag/Pd] n /CoFe、[CoFe/Ag/Ni] n /CoFe、[CoFe/Au/Pt] n /CoFe、[CoFe/Au/Pd] n /CoFe、[CoFe/Au/Ni] n /CoFe、[CoFe/Cu/Pt] n /CoFe、[CoFe/Cu/Pd] n /CoFe、[CoFe/Cu/Ni] n CoFe, coAgPt, coAgPd, coAgNi, feAgPt, feAgPd, feAgNi, coFeAgPt, coFeAgPd, coFeAgNi, coAuPt, coAuPd, coAuNi, feAuPt, feAuPd, feAuNi, coFeAuPt, coFeAuPd, coFeAuNi, coCuPt, coCuPd, coCuNi, feCuPt, feCuPd, feCuNi, coFeCuPt, coFeCuPd or CoFeCuNi, wherein n is more than or equal to 2.
In an embodiment of the present application, further comprises a second ferromagnetic layer (2) nd Ferro-Magnetic Layer，2 nd FML) 223, disposed on the antiferromagnetic coupling layer 222, formed of a transition metal having a face-centered crystal structure in combination with a ferromagnetic material; wherein the antiferromagnetic coupling of the second ferromagnetic layer 223 and the first ferromagnetic layer 221 is achieved by the antiferromagnetic coupling layer 222; ferromagnetic coupling of the reference layer 24 and the second ferromagnetic layer 223 is achieved through the lattice-blocking layer 23 to achieve pinning of the magnetization vector of the reference layer 24; the total thickness of the second ferromagnetic layer 223 is 0.5 nm-2.0 nm, and the material is Co, fe, coFe, co/[ Pt/Co ]] m 、Co/[Pd/Co] m 、Co/[Ni/Co] m 、Fe/[Pt/Fe] m 、Fe/[Pd/Fe] m 、Fe/[Ni/Fe] m 、CoFe/[Pt/CoFe] m 、CoFe/[Pd/CoFe] m 、CoFe/[Ni/CoFe] m 、Co/[AgPt/Co] m 、Co/[AgPd/Co] m 、Co/[AgNi/Co] m 、Co/[AuPt/Co] m 、Co/[AuPd/Co] m 、Co/[AuNi/Co] m 、Co/[CuPt/Co] m 、Co/[CuPd/Co] m 、Co/[CuNi/Co] m 、Co/[Ag/Pt/Co] m 、Co/[Ag/Pd/Co] m 、Co/[Ag/Ni/Co] m 、Co/[Au/Pt/Co] m 、Co/[Au/Pd/Co] m 、Co/[Au/Ni/Co] m 、Co/[Cu/Pt/Co] m 、Co/[Cu/Pd/Co] m 、Co/[Cu/Ni/Co] m 、Fe/[AgPt/Fe] m 、Fe/[AgPd/Fe] m 、Fe/[AgNi/Fe] m 、Fe/[AuPt/Fe] m 、Fe/[AuPd/Fe] m 、Fe/[AuNi/Fe] m 、Fe/[CuPt/Fe] m 、Fe/[CuPd/Fe] m 、Fe/[CuNi/Fe] m 、Fe/[Ag/Pt/Fe] m 、Fe/[Ag/Pd/Fe] m 、Fe/[Ag/Ni/Fe] m 、Fe/[Au/Pt/Fe] m 、Fe/[Au/Pd/Fe] m 、Fe/[Au/Ni/Fe] m 、Fe/[Cu/Pt/Fe] m 、Fe/[Cu/Pd/Fe] m 、Fe/[Cu/Ni/Fe] m 、CoFe/[AgPt/CoFe] m 、CoFe/[AgPd/CoFe] m 、CoFe/[AgNi/CoFe] m 、CoFe/[AuPt/CoFe] m 、CoFe/[AuPd/CoFe] m 、CoFe/[AuNi/CoFe] m 、CoFe/[CuPt/CoFe] m 、CoFe/[CuPd/CoFe] m 、CoFe/[CuNi/CoFe] m 、CoFe/[Ag/Pt/CoFe] m 、CoFe/[Ag/Pd/CoFe] m 、CoFe/[Ag/Ni/CoFe] m 、CoFe/[Au/Pt/CoFe] m 、CoFe/[Au/Pd/CoFe] m 、CoFe/[Au/Ni/CoFe] m 、CoFe/[Cu/Pt/CoFe] m 、CoFe/[Cu/Pd/CoFe] m 、CoFe/[Cu/Ni/CoFe] m CoAgPt, coAgPd, coAgNi, feAgPt, feAgPd, feAgNi, coFeAgPt, coFeAgPd, coFeAgNi, coAuPt, coAuPd, coAuNi, feAuPt, feAuPd, feAuNi, coFeAuPt, coFeAuPd, coFeAuNi, coCuPt, coCuPd, coCuNi, feCuPt, feCuPd, feCuNi, coFeCuPt, coFeCuPd or CoFeCuNi, wherein m is more than or equal to 1.
In an embodiment of the present application, either the first ferromagnetic layer 221 or the second ferromagnetic layer 223, among AgPt, agPd, agNi, auPt, auPd, auNi, cuPt, cuPd, cuNi, coAgPt, coAgPd, coAgNi, feAgPt, feAgPd, feAgNi, coFeAgPt, coFeAgPd, coFeAgNi, coAuPt, coAuPd, coAuNi, feAuPt, feAuPd, feAuNi, coFeAuPt, coFeAuPd, coCuPt, coCuPd, coCuNi, feCuPt, feCuPd, feCuNi, feCuPt, feCuNi, feCuPt, coFeCuPt, coFeCuPd, or CoFeCuNi, the atomic percentages of Ag, au and Cu do not exceed 10%.
In one embodiment of the present application, the first ferromagnetic layer 221 or the second ferromagnetic layer 223 are deposited at a high temperature, not exceeding 400 ℃; after deposition, it is optionally cooled to room temperature or ultra-low temperature.
In one embodiment of the present application, the antiferromagnetic coupling layer 222 is Ru, ir or Rh with a thickness of 0.3nm to 1.5nm. Further, in the strongly synthetic antiferromagnetic layer 22 having a tri-layer structure, the antiferromagnetic coupling layer 222 may be selected from a first peak (0.3 nm to 0.6 nm) of RKKY of Ru, a second peak (0.7 nm to 0.9 nm) of RKKY of Ru, or a first peak (0.3 nm to 0.5 nm) of RKKY of Ir.
In one embodiment of the present application, the seed layer 21 is generally composed of Ta, ti, tiN, taN, W, WN, ru, pt, cr, O, N, coB, feB, coFeB or their combination, and further may be a multi-layer structure such as CoFeB/Ta/Pt, ta/Ru, ta/Pt or Ta/Pt/Ru. To optimize the crystal structure of the subsequent synthetic ferromagnetic layer (SyAF) 22.
In an embodiment of the present application, the total thickness of the lattice partition layer 23 is 0nm to 0.8nm, and the material is X or XY, wherein X is Mg, ca, sc, Y, ti, zr, V, ta, hf, nb, cr, mn, ru, ir, os, zn, al, ga, in, C, si, ge, sn, or any combination of the foregoing elements, and Y is CoB, feB, feCoB, feC, coC, feCoC, O, N, or the like.
In one embodiment of the present application, the Reference Layer (RL) 24 has a thickness of 0.5nm to 2.0nm, and is typically Co, fe, ni, coFe, coC, feC, feCoC, coB, feB, coFeB, or any combination thereof.
In one embodiment of the present application, the barrier layer 25 is a non-magnetic metal oxide having a total thickness of 0.6nm to 1.5nm, preferably MgO, mgZnO, mg 3 B 2 O 6 Or MgAl 2 O 4 Further, mgO may be selected.
In one embodiment of the present application, the free layer 26 has a variable magnetic polarization with a total thickness of 1.2nm to 3nm, and is generally composed of CoB, feB, coFeB, coFe/CoFeB, fe/CoFeB, coFeB/(Ta, W, mo, hf)/CoFeB, fe/CoFeB/(W, mo, hf)/CoFeB or CoFe/CoFeB/(W, mo, hf)/CoFeB, and further CoFeB/(W, mo, hf)/CoFeB, fe/CoFeB/(W, mo, hf)/CoFeB or CoFe/CoFeB/(W, mo, hf)/CoFeB.
In one embodiment of the present application, after the deposition of the free layer 26, a Capping Layer (CL) 27, typically (Mg, mgO, mgZnO, mg), is again deposited 3 B 2 O 6 Or MgAl 2 O 4 ) /(combinations of W, mo, mg, nb, ru, hf, V, cr, or Pt) bilayer structures. Preferably, the structure MgO/(W, mo, hf)/Ru or MgO/Pt/(W, mo, hf)/Ru can be selected. The superior effect of selecting MgO provides a source of additional interfacial anisotropy for the free layer 26, thereby increasing thermal stability.
In one embodiment of the present application, an annealing process is performed on the magnetic tunnel junction 20 at a temperature between 350 ℃ and 400 ℃ to cause the reference layer 24 and the free layer 26 to transform from an amorphous structure to a body-centered cubic stacked crystal structure under the templating action of the sodium chloride (NaCl) type face-centered cubic crystal structure barrier layer 25.
Another aspect of the present invention is a magnetic random access memory architecture, comprising a plurality of memory cells, each memory cell being disposed at an intersection of a bit line and a word line, each memory cell comprising: a magnetic tunnel junction 20 as any of the previously described; a bottom electrode located below the magnetic tunnel junction 20; and a top electrode located above the magnetic tunnel junction 20.
In one embodiment of the present application, the bottom electrode 10, the magnetic tunnel junction 20, and the top electrode 30 are all formed by a physical vapor deposition process.
In an embodiment of the present application, the material of the bottom electrode 10 is one or a combination of titanium, titanium nitride, tantalum nitride, ruthenium, tungsten nitride, and the like.
In an embodiment of the present application, the material of the top electrode 30 is selected from one or a combination of titanium, titanium nitride, tantalum nitride, tungsten nitride, and the like.
In some embodiments, the bottom electrode 10 is planarized after deposition to achieve surface planarity for fabricating the magnetic tunnel junction 20.
The pinning of the Reference Layer (RL) is better achieved due to the stronger perpendicular anisotropy (PMA) of the first ferromagnetic layer. The method is beneficial to the improvement of magnetism, electricity and yield of the magnetic random access memory and the further miniaturization of the device.
The terms "in one embodiment of the present application" and "in various embodiments" are used repeatedly. This phrase generally does not refer to the same embodiment; it may also refer to the same embodiment. The terms "comprising," "having," and "including" are synonymous, unless the context dictates otherwise.
Although the present application has been described with reference to specific embodiments, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the application, and all changes, substitutions and alterations that fall within the spirit and scope of the application are to be understood as being covered by the following claims.

Claims (6)

1. A magnetic tunnel junction structure of a magnetic random access memory is arranged in a magnetic random access memory unit, the magnetic tunnel junction structure comprises a covering layer, a free layer, a barrier layer, a reference layer, a lattice partition layer, a strong synthetic antiferromagnetic layer and a seed layer from top to bottom, and the strong synthetic antiferromagnetic layer comprises:
a first ferromagnetic layer formed of a transition metal having a face-centered crystalline structure in combination with a ferromagnetic material; and
an antiferromagnetic coupling layer disposed on the first ferromagnetic layer and formed of a transition metal material capable of forming antiferromagnetic coupling;
wherein the antiferromagnetic coupling layer combines with the lattice partition layer to perform lattice switching and antiferromagnetic coupling between the first ferromagnetic layer and the reference layer to achieve pinning of a magnetization vector of the reference layer;
wherein the total thickness of the first ferromagnetic layer is 0.5 nm-4.0 nm, and the material of the first ferromagnetic layer is [ Co/AgPt ]] n /Co、[Co/AgPd] n /Co、[Co/AgNi] n /Co、[Co/AuPt] n /Co、[Co/AuPd] n /Co、[Co/AuNi] n /Co、[Co/CuPt] n /Co、[Co/CuPd] n /Co、[Co/CuNi] n /Co、[Co/Ag/Pt] n /Co、[Co/Ag/Pd] n /Co、[Co/Ag/Ni] n /Co、[Co/Au/Pt] n /Co、[Co/Au/Pd] n /Co、[Co/Au/Ni] n /Co、[Co/Cu/Pt] n /Co、[Co/Cu/Pd] n /Co、[Co/Cu/Ni] n /Co、[Fe/AgPt] n /Fe、[Fe/AgPd] n /Fe、[Fe/AgNi] n /Fe、[Fe/AuPt] n /Fe、[Fe/AuPd] n /Fe、[Fe/AuNi] n /Fe、[Fe/CuPt] n /Fe、[Fe/CuPd] n /Fe、[Fe/CuNi] n /Fe、[Fe/Ag/Pt] n /Fe、[Fe/Ag/Pd] n /Fe、[Fe/Ag/Ni] n /Fe、[Fe/Au/Pt] n /Fe、[Fe/Au/Pd] n /Fe、[Fe/Au/Ni] n /Fe、[Fe/Cu/Pt] n /Fe、[Fe/Cu/Pd] n /Fe、[Fe/Cu/Ni] n /Fe、[CoFe/AgPt] n /CoFe、[CoFe/AgPd] n /CoFe、[CoFe/AgNi] n /CoFe、[CoFe/AuPt] n /CoFe、[CoFe/AuPd] n /CoFe、[CoFe/AuNi] n /CoFe、[CoFe/CuPt] n /CoFe、[CoFe/CuPd] n /CoFe、[CoFe/CuNi] n /CoFe、[CoFe/Ag/Pt] n /CoFe、[CoFe/Ag/Pd] n /CoFe、[CoFe/Ag/Ni] n /CoFe、[CoFe/Au/Pt] n /CoFe、[CoFe/Au/Pd] n /CoFe、[CoFe/Au/Ni] n /CoFe、[CoFe/Cu/Pt] n /CoFe、[CoFe/Cu/Pd] n /CoFe、[CoFe/Cu/Ni] n CoFe, coAgPt, coAgPd, coAgNi, feAgPt, feAgPd, feAgNi, coFeAgPt, coFeAgPd, coFeAgNi, coAuPt, coAuPd, coAuNi, feAuPt, feAuPd, feAuNi, coFeAuPt, coFeAuPd, coFeAuNi, coCuPt, coCuPd, coCuNi, feCuPt, feCuPd, feCuNi, coFeCuPt, coFeCuPd or CoFeCuNi, wherein n is more than or equal to 2;
the second ferromagnetic layer is arranged on the antiferromagnetic coupling layer and is formed by combining a transition metal with a face-centered crystal structure with a ferromagnetic material; wherein the antiferromagnetic coupling of the second ferromagnetic layer and the first ferromagnetic layer is achieved through the antiferromagnetic coupling layer; effecting ferromagnetic coupling of a reference layer and the second ferromagnetic layer through the lattice-blocking layer to effect pinning of the reference layer magnetization vector; the total thickness of the second ferromagnetic layer is 0.5 nm-2.0 nm, and the second ferromagnetic layer is made of Co, fe, coFe, co/[ Pt/Co ] material] m 、Co/[Pd/Co] m 、Co/[Ni/Co] m 、Fe/[Pt/Fe] m 、Fe/[Pd/Fe] m 、Fe/[Ni/Fe] m 、CoFe/[Pt/CoFe] m 、CoFe/[Pd/CoFe] m 、CoFe/[Ni/CoFe] m 、Co/[AgPt/Co] m 、Co/[AgPd/Co] m 、Co/[AgNi/Co] m 、Co/[AuPt/Co] m 、Co/[AuPd/Co] m 、Co/[AuNi/Co] m 、Co/[CuPt/Co] m 、Co/[CuPd/Co] m 、Co/[CuNi/Co] m 、Co/[Ag/Pt/Co] m 、Co/[Ag/Pd/Co] m 、Co/[Ag/Ni/Co] m 、Co/[Au/Pt/Co] m 、Co/[Au/Pd/Co] m 、Co/[Au/Ni/Co] m 、Co/[Cu/Pt/Co] m 、Co/[Cu/Pd/Co] m 、Co/[Cu/Ni/Co] m 、Fe/[AgPt/Fe] m 、Fe/[AgPd/Fe] m 、Fe/[AgNi/Fe] m 、Fe/[AuPt/Fe] m 、Fe/[AuPd/Fe] m 、Fe/[AuNi/Fe] m 、Fe/[CuPt/Fe] m 、Fe/[CuPd/Fe] m 、Fe/[CuNi/Fe] m 、Fe/[Ag/Pt/Fe] m 、Fe/[Ag/Pd/Fe] m 、Fe/[Ag/Ni/Fe] m 、Fe/[Au/Pt/Fe] m 、Fe/[Au/Pd/Fe] m 、Fe/[Au/Ni/Fe] m 、Fe/[Cu/Pt/Fe] m 、Fe/[Cu/Pd/Fe] m 、Fe/[Cu/Ni/Fe] m 、CoFe/[AgPt/CoFe] m 、CoFe/[AgPd/CoFe] m 、CoFe/[AgNi/CoFe] m 、CoFe/[AuPt/CoFe] m 、CoFe/[AuPd/CoFe] m 、CoFe/[AuNi/CoFe] m 、CoFe/[CuPt/CoFe] m 、CoFe/[CuPd/CoFe] m 、CoFe/[CuNi/CoFe] m 、CoFe/[Ag/Pt/CoFe] m 、CoFe/[Ag/Pd/CoFe] m 、CoFe/[Ag/Ni/CoFe] m 、CoFe/[Au/Pt/CoFe] m 、CoFe/[Au/Pd/CoFe] m 、CoFe/[Au/Ni/CoFe] m 、CoFe/[Cu/Pt/CoFe] m 、CoFe/[Cu/Pd/CoFe] m 、CoFe/[Cu/Ni/CoFe] m CoAgPt, coAgPd, coAgNi, feAgPt, feAgPd, feAgNi, coFeAgPt, coFeAgPd, coFeAgNi, coAuPt, coAuPd, coAuNi, feAuPt, feAuPd, feAuNi, coFeAuPt, coFeAuPd, coFeAuNi, coCuPt, coCuPd, coCuNi, feCuPt, feCuPd, feCuNi, coFeCuPt, coFeCuPd or CoFeCuNi, wherein m is more than or equal to 1;
<xnotran> AgPt, agPd, agNi, auPt, auPd, auNi, cuPt, cuPd, cuNi, coAgPt, coAgPd, coAgNi, feAgPt, feAgPd, feAgNi, coFeAgPt, coFeAgPd, coFeAgNi, coAuPt, coAuPd, coAuNi, feAuPt, feAuPd, feAuNi, coFeAuPt, coFeAuPd, coFeAuNi, coCuPt, coCuPd, coCuNi, feCuPt, feCuPd, feCuNi, coFeCuPt, coFeCuPd CoFeCuNi , ag, au Cu 10%. </xnotran>
2. The magnetic tunnel junction structure for magnetic random access memory of claim 1 wherein the atomic percentage of Au, ag, and Cu in said AgPt, agPd, agNi, auPt, auPd, auNi, cuPt, cuPd, cuNi, coapt, coAgPd, coagdi, coAgPt, feAgPt, feagdi, cofeaagpt, cofeaagpd, cofeaagni, coadpt, coaldi, fealdi, feAuPd, feAuPt, cofeaipt, cofeapd, cofeamni, cocutpt, cocubd, cocubni, fecutpt, fecudp, fecundi, coFeCuPt, coFeCuPd, or CoFeCuNi is not more than 10%.
3. The magnetic tunnel junction structure of claim 1 wherein a high temperature deposition is used to deposit said first ferromagnetic layer, the temperature of which does not exceed 400 ℃; after deposition, it is optionally cooled to room temperature or ultra-low temperature.
4. The magnetic tunnel junction structure of claim 1 wherein the antiferromagnetic coupling layer is Ru, ir or Rh with a thickness of 0.3nm to 1.5nm.
5. The magnetic tunnel junction structure of claim 1 wherein a high temperature deposition is used in depositing said second ferromagnetic layer, the temperature of which does not exceed 400 ℃; after deposition, it is optionally cooled to room temperature or ultra-low temperature.
6. A magnetic random access memory comprising the magnetic tunnel junction structure of any of claims 1-5, a top electrode disposed above the magnetic tunnel junction structure, and a bottom electrode disposed below the magnetic tunnel junction structure.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09186375A (en) * 1992-10-30 1997-07-15 Toshiba Corp Magnetoresistive effect element
CN107452869A (en) * 2016-05-31 2017-12-08 上海磁宇信息科技有限公司 A kind of vertical-type magnetoresistive element and its manufacturing process
CN108232003A (en) * 2016-12-21 2018-06-29 上海磁宇信息科技有限公司 A kind of vertical-type magnetoresistive element and its manufacturing method
EP3442042A1 (en) * 2017-08-10 2019-02-13 Commissariat à l'Energie Atomique et aux Energies Alternatives Synthetic antiferromagnetic layer, magnetic tunnel junction and spintronic device using said synthetic antiferromagnetic layer
KR20190087943A (en) * 2018-01-17 2019-07-25 한양대학교 산학협력단 Memory device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9214624B2 (en) * 2012-07-27 2015-12-15 Qualcomm Incorporated Amorphous spacerlattice spacer for perpendicular MTJs
US9741926B1 (en) * 2016-01-28 2017-08-22 Spin Transfer Technologies, Inc. Memory cell having magnetic tunnel junction and thermal stability enhancement layer
WO2017135767A1 (en) * 2016-02-05 2017-08-10 한양대학교 산학협력단 Memory device
EP3460811B1 (en) * 2017-09-20 2020-06-17 IMEC vzw Magnetic layer structure for magnetic tunnel junction device
US10461242B2 (en) * 2017-12-30 2019-10-29 Spin Memory, Inc. Antiferromagnetic exchange coupling enhancement in perpendicular magnetic tunnel junction stacks for magnetic random access memory applications

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09186375A (en) * 1992-10-30 1997-07-15 Toshiba Corp Magnetoresistive effect element
CN107452869A (en) * 2016-05-31 2017-12-08 上海磁宇信息科技有限公司 A kind of vertical-type magnetoresistive element and its manufacturing process
CN108232003A (en) * 2016-12-21 2018-06-29 上海磁宇信息科技有限公司 A kind of vertical-type magnetoresistive element and its manufacturing method
EP3442042A1 (en) * 2017-08-10 2019-02-13 Commissariat à l'Energie Atomique et aux Energies Alternatives Synthetic antiferromagnetic layer, magnetic tunnel junction and spintronic device using said synthetic antiferromagnetic layer
KR20190087943A (en) * 2018-01-17 2019-07-25 한양대학교 산학협력단 Memory device

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