CN112736191A - Magnetic tunnel junction structure with symmetrical structure and magnetic random access memory - Google Patents
Magnetic tunnel junction structure with symmetrical structure and magnetic random access memory Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
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- Mram Or Spin Memory Techniques (AREA)
Abstract
The application provides a magnetic tunnel junction structure and magnetic random access memory of utensil symmetrical structure, magnetic tunnel junction structure includes the double-deck design of free layer, combines to set up the symmetrical structure of two barrier layers and extension in the upper and lower both sides of free layer. The design of the symmetrical structure and the design of the double free layers is beneficial to improving the thermal stability, the stable and sufficient tunneling magnetic resistance rate is kept while the total resistance area product is not amplified through the design of the double barrier layers, the critical current can be effectively reduced, and the improvement of the read/write performance of the MRAM circuit and the manufacture of the subminiature MRAM circuit are greatly facilitated.
Description
Technical Field
The present invention relates to the field of memory technologies, and in particular, to a magnetic tunnel junction structure and a magnetic random access memory.
Background
Magnetic Random Access Memory (MRAM) in a Magnetic Tunnel Junction (MTJ) having Perpendicular Anisotropy (PMA), as a free layer for storing information, has two magnetization directions in a vertical direction, that is: upward and downward, respectively corresponding to "0" and "1" or "1" and "0" in binary, in practical application, the magnetization direction of the free layer will remain unchanged when reading information or leaving empty; during writing, if a signal different from the existing state is input, the magnetization direction of the free layer will be flipped by one hundred and eighty degrees in the vertical direction. The ability of the magnetization direction of the free layer of the magnetic random access Memory to remain unchanged is called data retention capability or thermal stability, and is required to be different in different application situations, for a typical Non-volatile Memory (NVM), such as: the method is applied to the field of automotive electronics, the requirement of data storage capacity is that the data can be stored for at least ten years at 125 ℃, and the data retention capacity or the thermal stability is reduced when external magnetic field overturning, thermal disturbance, current disturbance or reading and writing are carried out for multiple times.
In order to increase the storage density of MRAM, the Critical Dimension (CD) of the magnetic tunnel junction is becoming smaller in recent years. As the dimensions are further reduced, a drastic deterioration in the thermal stability factor of the magnetic tunnel junction is observed. In order to increase the thermal stability factor of the ultra-small MRAM cell device, the effective perpendicular anisotropy energy density may be increased by reducing the thickness of the free layer, adding or changing the free layer into a material with a low saturation magnetic susceptibility, and so on, thereby maintaining a higher thermal stability factor, but the Tunneling Magnetoresistance Ratio (TMR) of the magnetic Tunnel junction may be reduced, thereby increasing the error rate of the memory read operation.
Disclosure of Invention
In order to solve the above-mentioned problems, an object of the present invention is to provide a magnetic tunnel junction structure and a magnetic random access memory having a symmetric structure and combining dual free layers and dual barrier layers.
The purpose of the application and the technical problem to be solved are realized by adopting the following technical scheme.
According to the magnetic tunnel junction with the symmetrical structure provided by the applicationStructure comprising a Capping Layer (CL), a Free Layer (FL), a Barrier Layer (TBL), a Reference Layer (RL), a lattice Breaking Layer (CBL), an antiferromagnetic Layer (SyAF) and a Seed Layer (Seed Layer, SL), wherein the Barrier Layer, the Reference Layer, the lattice Breaking Layer and the antiferromagnetic Layer are of a double-Layer structure, the double-Layer structure being separated and symmetrically disposed on the upper and lower sides of the Free Layer, the Free Layer comprising from bottom to top: first free layer (1)st Free Layer，1stFL) that is a variable magnetic polarization layer, a single-layer or multi-layer structure formed of a magnetic metal alloy or a compound thereof; a Perpendicular Anisotropy enhancement Layer (PMA-EL) disposed on the first free Layer, the Perpendicular Anisotropy enhancement Layer being formed of a non-Magnetic metal oxide; a second free layer (2)nd Free Layer，2ndFL) disposed on the perpendicular anisotropy enhancing layer, the second free layer being a variable magnetic polarization layer, a single layer or a multi-layer structure formed of a magnetic metal alloy or a compound thereof; wherein the perpendicular anisotropy enhancement layer is to enable magnetic coupling of the first free layer with a second free layer. Meanwhile, by arranging the magnetic moments of the first reference layer and the second reference layer to be antiparallel, when a write current passes through, the density of polarized spin electrons in the free layer will increase, resulting in a reduction in the required critical write current density.
The technical problem solved by the application can be further realized by adopting the following technical measures.
In one embodiment of the present application, the total thickness of the first free layer is 1.2 nm to 3 nm, the material of the first free layer is selected from the group consisting of cofeb, eb, cofeb/cofeb, fe/cofeb, cofeb/(w, mo, hf)/cofeb, fe/cofeb/(w, mo, hf)/cofeb, or cofeb/(w, mo, hf)/cofeb, preferably cofeb/(w, mo, hf)/cofeb, fe/cofeb/(w, mo, hf)/cofeb, etc., preferably cofeb/(w, mo, hf)/cofeb, fe/cofeb/(w, mo, hf)/cofeb, or cobalt boron alloy/cobalt iron boron alloy/(tungsten, molybdenum, hafnium)/cobalt iron boron alloy structure.
In an embodiment of the present application, the total thickness of the second free layer is 1.2 nm to 3 nm, the material of the second free layer is selected from cofeb, eb, cofeb/co, cofeb/(w, mo, hf)/cofeb/fe, cofeb/(w, mo, hf)/cofeb/co, cofeb/(w, mo, hf)/cofeb/co, and the like, and further, cofeb/(w, mo, hf)/cofeb/co/(w, co, fe, b/(w, mo, hf)/cofeb/co, or cofeb/(w), molybdenum, hafnium)/cofeb structures.
In an embodiment of the present application, the material of the vertical anisotropy enhancing layer is a non-magnetic metal oxide layer containing a sub-atomic interlayer or a doped material, and the thickness is 0.6 nm to 1.3 nm. The non-magnetic metal oxide layer in the vertical anisotropy enhancing layer is an oxide of magnesium, aluminum, silicon, calcium, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, strontium, yttrium, zirconium, niobium, molybdenum, technetium, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, rhenium, osmium, or a combination thereof. Further, MgO is preferable.
In an embodiment of the present application, the vertical anisotropy enhancing layer is a non-magnetic metal oxide layer containing a doped conductive material, and the total thickness is 0.8 nm to 1.2 nm.
In an embodiment of the present application, the non-magnetic metal oxide layer containing the doped conductive material is a uniformly doped non-magnetic metal oxide layer.
In an embodiment of the present application, the perpendicular anisotropy enhancing layer is a [ nonmagnetic metal oxide layer ]]1-aMaM is magnesium, aluminum, silicon, calcium, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, strontium, yttrium, zirconiumNiobium, molybdenum, technetium, ruthenium, rhodium, palladium, silver, hafnium, tantalum, tungsten, rhenium, osmium, iridium, platinum, gold, or combinations thereof, 0<a≤7％。
In an embodiment of the present application, the perpendicular anisotropy enhancement layer is sputter deposited by doping a target of the non-magnetic metal oxide layer with M, or co-sputter deposited with a target of the non-magnetic metal oxide layer and an M target.
In an embodiment of the present application, the doped conductive material-containing non-magnetic metal oxide layer is a single-interpenetration or multi-interpenetration doped conductive material sublayer non-magnetic metal oxide layer.
In an embodiment of the present application, the perpendicular anisotropy enhancing layer is [ nonmagnetic metal oxide layer/M ]]nThe structure of the non-magnetic metal oxide layer, n is more than or equal to 1 and less than or equal to 3, preferably, the thickness of the single-layer non-magnetic metal oxide layer is between 0.2 and 1.0 nanometers, and the thicknesses of the single-layer non-magnetic metal oxide layer are the same or different; preferably, the subatomic interlayer M is magnesium, aluminum, silicon, calcium, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, strontium, yttrium, zirconium, niobium, molybdenum, technetium, ruthenium, rhodium, palladium, silver, hafnium, tantalum, tungsten, rhenium, osmium, iridium, platinum, gold, or a combination thereof, and the thickness of the single-layer subatomic interlayer M is b, 0<b is less than or equal to 0.1 nm, and the thickness of the single layer of subatomic interlayer M can be the same or different.
In an embodiment of the present application, each non-magnetic metal oxide layer is generated by performing a sputtering deposition on a non-magnetic metal oxide target, or by performing a sputtering deposition on a non-magnetic metal target and then performing an oxidation to form a non-magnetic metal oxide layer.
In an embodiment of the present application, the barrier layers include a first barrier layer (1)st Tunneling Barrier Layer，1stTBL) and a second barrier layer (2)nd Tunneling Barrier Layer，2ndTBL) including a first reference layer (1)st Reference Layer，1stRL) and a second reference layer (2)nd Reference Layer，2ndRL) of the lattice-stopper layerComprising a first lattice barrier layer (1)st Crystal Breaking Layer，1stCBL) and second lattice barrier (2)nd Crystal Breaking Layer，1stCBL) including a first antiferromagnetic layer (1)stSynthetic Anti-Ferromagnet Layer，1stSyAF) and a second antiferromagnetic layer (2)nd Synthetic Anti-Ferromagnet Layer，1stSyAF); the first antiferromagnetic layer, the first crystal lattice partition layer, the first reference layer and the first barrier layer are arranged between the seed layer and the free layer from bottom to top; the free layer and the cover layer include: a second barrier layer disposed on the free layer and formed of a magnesium metal oxide layer; a second reference layer disposed on the second barrier layer and formed of a ferromagnetic material and an alloy thereof; a second lattice partition layer disposed on the second reference layer and formed of a metal material having a low electronegativity or a metal having a low electronegativity in combination with a ferromagnetic material; a second antiferromagnetic layer disposed on the second lattice partition layer and formed of a transition metal material capable of forming antiferromagnetic coupling in combination with a ferromagnetic material; the second barrier layer, the second reference layer, the second lattice partition layer, the second antiferromagnetic layer, the first barrier layer, the first reference layer, the first lattice partition layer, and the first antiferromagnetic layer are symmetrically disposed on the upper and lower sides of the free layer.
In an embodiment of the present application, the first antiferromagnetic layer has a total thickness of 1.3 nm to 10.0 nm, and the first antiferromagnetic layer is made of a material selected from [ Co/Pt ] n Co/Ru, [ Co/Pt ] n Co/Ir, [ Co/Pt ] n Co/Ru/Co, [ Co/Pt ] n Co/Ir/Co/Pt ] n Co/Ru [ Pt/Co ] m, [ Co/Pt ] n Co/Ir/Co [ Pt/Co ] m, [ Co/Pd ] n Co/Ru/Co, [ Co/Pd ] n Co/Ir/Pd/Ru/Co [ Pd/Co ] m, [ Co/Pd ] n Co/Ir/Co/Pd/Co [ Pd/Co ] m [ Co/Ni ] n Co/Ru A multilayer structure of [ Co/Ni ] n Co/Ir, [ Co/Ni ] n Co/Ru/Co, [ Co/Ni ] n Co/Ir/Co, [ Co/Ni ] n Co/Ru/Co [ Ni/Co ] m or [ Co/Ni ] n Co/Ir/Co [ Ni/Co ] m, wherein n > m is not less than 1, the thickness of Pt, Pd or Ni is 0.1 nm to 0.4 nm, the thickness of Co is 0.15 nm to 1.0 nm, the thickness of each layer of Pt, Pd, Ni or Co may be the same or different, the thickness of Ru is 0.3 nm to 1.5 nm, the first RKKY oscillation peak or the second RKKY oscillation peak may be selected, the thickness of Ir is 0.3 nm to 0.6 nm, which corresponds to the first RKKY oscillation peak, and further, the first RK oscillation peak of Ir or Ru is selected.
In an embodiment of the present application, the total thickness of the second antiferromagnetic layer is 1.3 nm to 10.0 nm, and the material of the second antiferromagnetic layer is selected from ru/co [ pt/co ] materials]nCobalt/ruthenium/cobalt [ platinum/cobalt ]]n[ cobalt/platinum ]]mCobalt/ruthenium/cobalt [ platinum/cobalt ]]nRuthenium/cobalt [ palladium/cobalt ]]nCobalt/ruthenium/cobalt [ palladium/cobalt ]]n[ cobalt/palladium ]]mCobalt/ruthenium/cobalt [ palladium/cobalt ]]nRuthenium/cobalt [ nickel/cobalt ]]nCobalt/ruthenium/cobalt [ nickel/cobalt ]]nOr [ cobalt/nickel ]]mCobalt/ruthenium/cobalt [ nickel/cobalt ]]nIn which n is>m is more than or equal to 1, the thickness of the platinum, the palladium or the nickel is 0.1 to 0.4 nanometers, the thickness of the cobalt is 0.15 to 1.0 nanometers, the thickness of each layer of the platinum, the palladium, the nickel or the cobalt can be the same or different, the thickness of the ruthenium is 0.3 to 1.5 nanometers, and the RKKY first oscillation peak or the RKKY second oscillation peak can be selected. Further, the second oscillation peak of RKKY for ruthenium was selected.
In an embodiment of the present application, the thicknesses of the first lattice partition layer and the second lattice partition layer are respectively 0.1 nm to 1.0 nm, and the material of the first lattice partition layer and the second lattice partition layer is selected from ta, w, mo, hf, co (ta, w, mo, or hf), fe-co alloy (ta, w, mo, or hf), or fe-co-b alloy (ta, w, mo, or hf).
In an embodiment of the present application, the first reference layer and the second reference layer have a thickness of 0.5 nm to 1.5 nm, respectively, and the material of the first reference layer and the second reference layer is selected from cobalt, iron, nickel, cobalt-iron alloy, cobalt-boron alloy, iron-boron alloy, cobalt-iron-boron alloy, or a combination thereof. Further, after the magnetic field is initialized, the magnetization vectors of the first reference layer and the second reference layer in the vertical direction are antiparallel. In an embodiment of the present application, the material of the first barrier layer and the second barrier layer is magnesium oxide. Further, the second barrier layer is formed of a magnesium metal oxide layer containing a doped conductive material. The total thicknesses of the first barrier layer and the second barrier layer are respectively between 0.5 nm and 1.5 nm; the junction resistance area product of the first barrier layer is greater than the junction resistance area product of the second barrier layer.
In an embodiment of the present application, the magnesium metal oxide layer containing the doped conductive material is a uniformly doped magnesium metal oxide layer.
In an embodiment of the present application, the second barrier layer is [ MgO ]]1-aMaM is magnesium, aluminum, silicon, calcium, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, strontium, yttrium, zirconium, niobium, molybdenum, technetium, ruthenium, rhodium, palladium, silver, hafnium, tantalum, tungsten, rhenium, osmium, iridium, platinum, gold, or a combination thereof, 0<a is less than or equal to 20 percent. The second barrier layer can be formed by doping M into the magnesium oxide target material to perform sputtering deposition or performing co-sputtering deposition on the magnesium oxide target material and the M target in a PVD process cavity.
In an embodiment of the present application, the doped conductive material-containing magnesium metal oxide layer is a magnesium metal oxide layer with a single or multiple insertion of doped conductive material sublayers.
In one embodiment of the present application, the second barrier layer is [ MgO/M ]]nThe structure of the magnesium oxide, n is more than or equal to 1 and less than or equal to 3, preferably, the thickness of the single-layer magnesium oxide is between 0.3 and 1.0 nanometers, and the thicknesses of the single-layer magnesium oxide are the same or different; preferably, M is magnesium, aluminum, silicon, calcium, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, strontium, yttrium, zirconium, niobium, molybdenum, technetium, ruthenium, rhodium, palladium, silver, hafnium, tantalum, tungsten, rhenium, osmium, iridium, platinum, gold, or a combination thereof, the monolayer M has a thickness b, 0<b is less than or equal to 0.1 nm, and the thickness of the single layer M can be the same or different. The generation mode of each layer of magnesium oxide is realized by adopting a mode of carrying out sputtering deposition on a magnesium oxide target material, or the magnesium target material is firstly carried out the sputtering depositionAnd then oxidized to form magnesium oxide.
In an embodiment of the present application, the total thickness of the second barrier layer is between 0.5 nm and 1.5 nm.
It is another objective of the present invention to provide a magnetic random access memory, wherein the storage unit comprises any one of the foregoing magnetic tunnel junction structures, a top electrode disposed above the magnetic tunnel junction structure, and a bottom electrode disposed below the magnetic tunnel junction structure.
In an embodiment of the present application, an annealing operation is performed at a temperature of not less than 350 ℃ for at least 30 minutes after the bottom electrode, seed layer, antiferromagnetic layer, lattice partition layer, reference layer, barrier layer, free layer, capping layer, and top electrode are deposited. The first reference layer, the second reference layer and the free layer are transformed from an amorphous structure to a crystal structure of a body centered cubic structure BCC (001) by a template action of the first barrier layer and the second barrier layer of a NaCl type structure face centered cubic structure FCC (001).
According to the magnetic tunnel junction unit structure, the thermal stability is improved beneficially through a symmetrical structure design and a double free layer design; secondly, through the design of the double barrier layers, the stable and enough tunneling magnetic resistance rate can be kept while the total resistance area product is not amplified, the critical current of the MTJ unit can be effectively reduced, and the improvement of the read/write performance of the MRAM circuit and the manufacture of the subminiature MRAM circuit are greatly facilitated.
Drawings
FIG. 1 is a diagram illustrating an exemplary MRAM cell structure;
FIG. 2 is a schematic diagram of a symmetric magnetic memory cell according to an embodiment of the present invention;
FIG. 3A is a schematic illustration showing a doping structure of a vertical anisotropy enhancing layer according to an embodiment of the present application;
fig. 3B is a schematic structural diagram of a vertical anisotropy enhancement layer with interpenetration layers according to an embodiment of the present application.
Detailed Description
Refer to the drawings wherein like reference numbers refer to like elements throughout. The following description is based on illustrated embodiments of the application and should not be taken as limiting the application with respect to other embodiments that are not detailed herein.
The following description of the various embodiments refers to the accompanying drawings, which illustrate specific embodiments that can be used to practice the present application. In the present application, directional terms such as "up", "down", "front", "back", "left", "right", "inner", "outer", "side", and the like are merely referring to the directions of the attached drawings. Accordingly, the directional terminology is used for purposes of illustration and understanding, and is in no way limiting.
The terms "first," "second," "third," and the like in the description and in the claims of the present application and in the above-described drawings, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It should be understood that the objects so described are interchangeable under appropriate circumstances. Furthermore, the terms "include" and "have," as well as variations of other related examples, are intended to cover non-exclusive inclusions.
The terminology used in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the concepts of the present application. Unless the context clearly dictates otherwise, expressions used in the singular form encompass expressions in the plural form. In the present specification, it will be understood that terms such as "including," "having," and "containing" are intended to specify the presence of the features, integers, steps, acts, or combinations thereof disclosed in the specification, and are not intended to preclude the presence or addition of one or more other features, integers, steps, acts, or combinations thereof. Like reference symbols in the various drawings indicate like elements.
The drawings and description are to be regarded as illustrative in nature, and not as restrictive. In the drawings, elements having similar structures are denoted by the same reference numerals. In addition, the size and thickness of each component shown in the drawings are arbitrarily illustrated for understanding and ease of description, but the present application is not limited thereto.
In the drawings, the range of configurations of devices, systems, components, circuits is exaggerated for clarity, understanding, and ease of description. It will be understood that when an element is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present.
In addition, in the description, unless explicitly described to the contrary, the word "comprise" will be understood to mean that the recited components are included, but not to exclude any other components. Further, in the specification, "on.
To further illustrate the technical means and effects of the present invention for achieving the predetermined objects, the following detailed description is provided with reference to the accompanying drawings and embodiments for a magnetic tunnel junction structure and a magnetic random access memory with a symmetric structure according to the present invention, and its specific structure, features and effects are described below.
FIG. 1 is a diagram of an exemplary MRAM cell structure. The magnetic memory cell structure includes a multi-layer structure formed by at least a Bottom Electrode (BE) 10, a Magnetic Tunnel Junction (MTJ)20, and a Top Electrode (Top Electrode) 30.
In some embodiments, the bottom electrode 10 is titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), ruthenium (Ru), tungsten (W), tungsten nitride (WN), or combinations thereof; the top electrode 30 is made of titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), tungsten (W), tungsten nitride (WN), or a combination thereof. The magnetic memory cell structure is typically implemented by Physical Vapor Deposition (PVD), and is typically planarized after the bottom electrode 10 is deposited to achieve surface flatness for the magnetic tunnel junction 20.
In some embodiments, the magnetic tunnel junction 20 includes, from top to bottom, a Capping Layer (CL) 27, a Free Layer (FL) 26, a Barrier Layer (Tunnel Barrier, TBL)25, a Reference Layer (RL) 24, a lattice Breaking Layer (CBL) 23, an antiferromagnetic Anti-ferromagnetic Layer (SyAF) 22, and a Seed Layer (Seed Layer; SL) 21.
As shown in fig. 1, in some embodiments, the free layer 26 is composed of a single or multi-layer structure of CoFeB, FeCo/CoFeB, or CoFeB/(Ta, W, Mo, or Hf)/CoFeB. Among them, the Data Retention capability (Data Retention) can be calculated by the following formula:
wherein tau is the time when the magnetization vector is unchanged under the condition of thermal disturbance, tau0For the trial time (typically 1ns), E is the energy barrier of the free layer, kBBoltzmann constant, T is the operating temperature.
The Thermal Stability factor (Thermal Stability factor) can then be expressed as the following equation:
wherein, KeffIs the effective isotropic energy density of the free layer, V is the volume of the free layer, KVConstant of bulk anisotropy MsSaturation susceptibility of the free layer, demagnetization constant in the direction perpendicular to Nz, t thickness of the free layer, KiIs the interfacial anisotropy constant, DMTJThe critical dimension of the magnetic random access memory (generally referred to as the diameter of the free layer 26), AsFor stiffness integral exchange constant, DnThe size of the inverted nucleus (generally referred to as the diameter of the inverted nucleus) during free layer inversion. Experiments show that when the thickness of the free layer is thicker, the free layer shows in-plane anisotropy, and when the thickness of the free layer is thinner, the free layer shows vertical anisotropy, KVGenerally, the contribution of demagnetization energy to the vertical anisotropy is negative, so that the vertical anisotropy is completely derived from the interfacial effect Ki。
In addition, as the volume of the free layer 26 is reduced, the writing or switching operation is performedThe smaller the spin-polarized current that needs to be injected. Critical current I for write operationc0The relationship between the compound and the thermal stability is strongly related, and can be expressed as the following formula:
wherein alpha is a damping constant,
η is the spin polarizability, which is the approximate planck constant. While increasing thermal stability, it becomes exceptionally important to reduce the critical current.
However, in order to increase the density of the magnetic random access memory, the Critical Dimension (Critical Dimension) of the magnetic tunnel junction 20 is made smaller and smaller. When the size is further reduced, it is found that the Thermal Stability (Thermal Stability Factor) of the magnetic tunnel junction 20 is drastically deteriorated. For ultra-small sized MRAM magnetic memory cells, the thickness of the free layer 26 may generally be reduced, the saturation susceptibility of the free layer 26 may be reduced, or the interfacial anisotropy may be increased in order to improve thermal stability. If the thickness of the free layer 26 is reduced, the Tunneling Magnetoresistance Ratio (TMR) is reduced, which increases the error rate in the read operation; under the condition of constant thickness, the addition or change of the free layer 26 into a material with low saturation magnetic susceptibility in the free layer 26 also reduces the tunneling magnetic resistivity, thereby reducing the spin polarization rate, which is not beneficial to the read/write operation of the device.
FIG. 2 is a schematic diagram of a symmetric magnetic memory cell according to an embodiment of the present invention; FIG. 3A is a schematic illustration showing a doping structure of a vertical anisotropy enhancing layer according to an embodiment of the present application; fig. 3B is a schematic structural diagram of a vertical anisotropy enhancement layer with interpenetration layers according to an embodiment of the present application. The prior art also refers to fig. 1 to facilitate understanding.
As shown in FIG. 2, in one embodiment of the present application, a magnetic tunnel junction structure 20 includes a Capping Layer (CL), a Free Layer (FL) 26, a Barrier Layer (Tunneling Barrier L)an underlayer, TBL), a Reference Layer (RL), a lattice Breaking Layer (CBL), an antiferromagnetic Anti-ferromagnetic Layer (SyAF), and a Seed Layer (Seed Layer, SL), wherein the barrier Layer, the Reference Layer, the lattice Breaking Layer, and the antiferromagnetic Layer are a double-Layer structure, the double-Layer structure is separated and symmetrically disposed on the upper and lower sides of the free Layer 26, and the free Layer 26 includes, from bottom to top: first free layer (1)stFree Layer，1stFL)26a, the first free layer 26a being a variable magnetic polarization layer, a single layer or a multilayer structure formed of a magnetic metal alloy or a compound thereof; a Perpendicular Anisotropy enhancement Layer (PMA-EL) 26c disposed on the first free Layer 26a, the Perpendicular Anisotropy enhancement Layer 26c being formed of a non-Magnetic metal oxide; a second free layer (2)nd Free Layer，2ndFL)26b disposed on the perpendicular anisotropy enhancing layer 26c, the second free layer 26b being a variable magnetic polarization layer, a single layer or a multi-layer structure formed of a magnetic metal alloy or a compound thereof; wherein the perpendicular anisotropy enhancing layer 26c is used to enable magnetic coupling of the first free layer 26a and the second free layer 26 b.
In an embodiment of the present application, the total thickness of the first free layer 26a is 1.2 nm to 3 nm, and the material of the first free layer 26a is selected from CoFeB, FeB, CoFeB, coffe/CoFeB, CoFeB/(W, Mo, Hf)/CoFeB, or CoFeB, and preferably CoFeB/CoFeB, CoFeB/(W, Mo, Ta)/CoFeB, or CoFeB, coffe/CoFeB/(W, Mo, Hf)/CoFeB, and the like, and is CoFeB/(W, Mo, Hf)/CoFeB, or CoFeB, preferably CoFeB/CoFeB, CoFeB/(W, Mo, Hf)/Hf, or a CoB/CoFeB/(W, Mo, Hf/CoFeB structure.
In an embodiment of the present application, the total thickness of the second free layer 26b is 1.2 nm to 3 nm, the material of the second free layer 26b is selected from CoFeB, FeB, CoFeB/CoFe, CoFeB/co, CoFeB/Fe, CoFeB/(Ta, W, Mo, Hf)/CoFeB, CoFeB/(W, Mo, Hf)/CoFeB/Fe, CoFeB/(W, Mo, Hf)/CoFeB/Hf, CoFeB/(W, Mo, Hf)/CoFeB/(CoFeB, Mo, Hf)/CoFeB, CoFeB/(W, Mo, Hf)/CoFeB, or CoFeB/(coffe, Mo, Hf)/CoFeB/(W, Mo, Hf)/CoFeB/(CoFeB, Hf)/CoFeB, and Hf, and the like, and further, CoFeB/(W, Hf, CoFeB/(CoFeB, Hf, CoFeB, cof, molybdenum Mo, hafnium Hf)/cobalt iron boron alloy CoFeB, cobalt iron boron alloy CoFeB/(tungsten W, molybdenum Mo, hafnium Hf)/cobalt iron boron alloy CoFeB/cobalt or cobalt iron boron alloy CoFeB/(tungsten W, molybdenum Mo, hafnium Hf)/cobalt iron boron alloy CoFeB/cobalt iron alloy CoFeB structure.
In an embodiment of the present application, the vertical anisotropy enhancing layer 26c is made of a non-magnetic metal oxide layer with a thickness of 0.6 nm to 1.3 nm. Furthermore, the vertical anisotropy enhancement layer 26c is a non-magnetic metal oxide layer containing a doped conductive material, and the total thickness is 0.8 nm to 1.2 nm. The non-magnetic metal oxide layer in the vertical anisotropy enhancing layer is an oxide of magnesium, aluminum, silicon, calcium, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, strontium, yttrium, zirconium, niobium, molybdenum, technetium, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, rhenium, osmium, or a combination thereof, preferably magnesium oxide MgO.
As shown in FIG. 3A, in some embodiments, the perpendicular anisotropy enhancing layer 26c is a [ non-magnetic metal oxide layer ]]1-aMaThe structure of (3), wherein the non-magnetic metal oxide layer is uniformly doped with a conductive material M. Wherein M is Mg, Al, Si, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Sr, YY, Zr, Nb, Mo, technetium Tc, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Pt, Au or their combinations, 0<a is less than or equal to 7 percent. Such an implementation of the perpendicular anisotropy enhancement layer 26c may beIn the PVD process cavity, the non-magnetic metal oxide target material is doped with M to carry out sputtering deposition, or the non-magnetic metal oxide target material and the M target are subjected to co-sputtering deposition.
As shown in FIG. 3B, in some embodiments, the perpendicular anisotropy enhancement layer 26c is [ non-magnetic metal oxide layer/M ]]nThe structure of the non-magnetic metal oxide layer is a sub-atom interlayer doped with a conductive material M and inserted in the non-magnetic metal oxide layer for one time or multiple times. Wherein n is more than or equal to 1 and less than or equal to 3, preferably, the thickness of the single-layer nonmagnetic metal oxide layer is between 0.2 nm and 1.0 nm, and the thicknesses of the single-layer nonmagnetic metal oxide layer are the same or different; preferably, M is Mg, Al, Si, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Sr, YY, Zr, Nb, Mo, technetium Tc, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Pt, Au or a combination thereof, the thickness of the single layer M is b, 0<b is less than or equal to 0.1 nm, and the thickness of the single layer M can be the same or different. The generation mode of each nonmagnetic metal oxide layer is realized by carrying out sputtering deposition on a target material of the nonmagnetic metal oxide layer, or the nonmagnetic metal target material is firstly subjected to sputtering deposition and then oxidized to form the nonmagnetic metal oxide layer.
As shown in FIG. 2, in an embodiment of the present application, the barrier layer comprises a first barrier layer (1) in an embodiment of the present applicationst Tunneling Barrier Layer，1stTBL)25a and a second barrier layer (2)nd Tunneling Barrier Layer，2ndTBL)25b, the reference layer comprising a first reference layer (1)st Reference Layer，1stRL)24a and a second reference layer (2)nd Reference Layer，2ndRL)24b, the lattice partition layer comprising a first lattice partition layer (1)st Crystal Breaking Layer，1stCBL)23a and second lattice isolation layer (2)nd Crystal Breaking Layer，1stCBL)23b, the antiferromagnetic layer comprising a first antiferromagnetic layer (1)st Synthetic Anti-Ferromagnet Layer，1stSyAF)22a and a second antiferromagnetic layer (2)nd Synthetic Anti-Ferromagnet Layer，1stSyAF)22 b; the first antiferromagnetic layer 22a, the first lattice blocking layer 23a, the first reference layer 24a, and the first barrier layer 25a are provided between the seed layer 21 and the free layer 26 from bottom to top; between the free layer 26 and the capping layer 27 are included: a second barrier layer 25b formed of a magnesium metal oxide layer and provided on the free layer 26; a second reference layer 24b disposed on the second barrier layer 25b and formed of a ferromagnetic material and an alloy thereof; a second lattice partition layer 23b disposed on the second reference layer 24b and formed of a metal material having a low electronegativity or a metal having a low electronegativity in combination with a ferromagnetic material; a second antiferromagnetic layer 22b disposed on the second lattice partition layer 23b and formed of a transition metal material capable of forming antiferromagnetic coupling in combination with a ferromagnetic material; the second barrier layer 25b, the second reference layer 24b, the second lattice-blocking layer 23b, and the second antiferromagnetic layer 22b, and the first barrier layer 25a, the first reference layer 24a, the first lattice-blocking layer 23a, and the first antiferromagnetic layer 22a are symmetrically disposed on upper and lower sides of the free layer 26.
In one embodiment of the present application, the total thickness of the first antiferromagnetic layer 22a is 1.3 nm to 10.0 nm, and the material of the first antiferromagnetic layer 22a is selected from [ Co/Pt/n Co/Ru, [ Co/Pt/n Co/Ir, [ Co/Pt/n Co/Ru/Co, Co/Pt ] n Co/Ir/Co, [ Co/Pt ] n Co/Ru/Co [ Pt/Co ] m, [ Co/Pt ] n Co/Ir/Co [ Pt/Co ] n Co/Co ] m, [ Co/Pd ] n Co/Pd/n Co/Ru, [ Co/Pd ] n Co/Ir, [ Co/Pd ] n Co/Pd/Co/Ru/Co, Co/Pd ] n Co/Pd/Ir, Co/Pd/Co, Co/Pd, [ Co/Pd ] n-Co/Ru/Co [ Pd/Co ] m, [ Co/Pd ] n-Co/Ir/Co [ Pd/Co ] m [ Co/Ni ] n-Co/Ru, [ Co/Ni ] n-Co/Ir, [ Co/Ni ] n-Co/Ru, [ Co/Ni ] n-Co/Ru/Co, [ Co/Ni ] n-Co/Ir/Co, or [ Co/Ni ] n-Co/Ru/Co [ Ni/Co ] m or [ Co/Ni ] n-Co/Ir/Co [ Ni/Co ] m, where n is not less than 1, Pt, Pd or Ni has a thickness of 0.1 nm to 0.4 nm, and Co has a thickness of 0.15 nm to 1.0 nm, the thicknesses of the platinum Pt, the palladium Pd, the nickel Ni or the cobalt Co of each layer can be the same or different, the thickness of the ruthenium Ru is 0.3-1.5 nanometers, a first RKKY oscillation peak can be selected, a second RKKY oscillation peak can be selected, the thickness of the iridium Ir is 0.3-0.6 nanometers, the first RKKY oscillation peak corresponds to the thickness of the iridium Ir or the first RKKY oscillation peak of the ruthenium Ru.
In an embodiment of the present application, the total thickness of the second antiferromagnetic layer 22b is 1.3 nm to 10.0 nm, and the material of the second antiferromagnetic layer 22b is selected from Ru/Co [ Pt/Co ] Co]nCobalt Co/ruthenium Ru/cobalt Co [ platinum Pt/cobalt Co ]]n[ cobalt Co/platinum Pt ]]mCobalt Co/ruthenium Ru/cobalt Co [ platinum Pt/cobalt Co ]]nRuthenium Ru/cobalt Co [ palladium Pd/cobalt Co ]]nCobalt Co/ruthenium Ru/cobalt Co [ palladium Pd/cobalt Co ]]n[ cobalt Co/palladium Pd ]]mCobalt Co/ruthenium Ru/cobalt Co [ palladium Pd/cobalt Co ]]nRuthenium Ru/cobalt Co [ nickel Ni/cobalt Co ]]nCobalt Co/ruthenium Ru/cobalt Co [ nickel Ni/cobalt Co ]]nOr [ cobalt Co/nickel Ni]mCobalt Co/ruthenium Ru/cobalt Co [ nickel Ni/cobalt Co ]]nIn which n is>m is more than or equal to 1, the thickness of the platinum Pt, the palladium Pd or the nickel Ni is 0.1-0.4 nm, the thickness of the cobalt Co is 0.15-1.0 nm, the thickness of each layer of the platinum Pt, the palladium Pd, the nickel Ni or the cobalt Co can be the same or different, the thickness of the ruthenium Ru is 0.3-1.5 nm, the RKKY first oscillation peak can be selected, and the RKKY second oscillation peak can be selected. Further, the second oscillation peak of RKKY of ruthenium Ru was selected.
In some embodiments, the thicknesses of the first lattice isolation layer 23a and the second lattice isolation layer 23b are 0.1 nm to 1.0 nm, respectively, the materials of the first lattice isolation layer 23a and the second lattice isolation layer 23b are selected from Ta, W, Mo, Hf, Co (Ta, W, Mo, Hf), Fe (Ta, W, Mo, Hf), FeCo (Ta, W, Mo, Hf), or FeCoB (Ta, W, Mo, Hf), and the preferred material of the first lattice isolation layer 23a is W or Mo.
In an embodiment of the present application, the thicknesses of the first reference layer 24a and the second reference layer 24b are 0.5 nm to 1.5 nm, respectively, and the materials of the first reference layer 24a and the second reference layer 24b are selected from Co, Fe, Ni, CoFE, CoB, FeB, or CoFeB, or a combination thereof. Further, after the magnetic field is initialized, the magnetization vectors of the first reference layer 24a and the second reference layer 24b in the vertical direction are antiparallel.
In an embodiment of the present application, the material of the first barrier layer 25a and the second barrier layer 25b is magnesium oxide MgO. Further, the second barrier layer 25b is formed of a magnesium metal oxide layer containing a doped conductive material.
In some embodiments, the second barrier layer 25b is [ magnesium oxide MgO]1-aMaThe structure of (3), wherein the magnesium metal oxide layer is uniformly doped with ferromagnetic material M. Wherein M is Mg, Al, Si, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Sr, YY, Zr, Nb, Mo, technetium Tc, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Pt, Au or their combinations, 0<a is less than or equal to 20 percent. The second barrier layer 25b can be formed by sputtering deposition of a magnesium oxide target doped with M or co-sputtering deposition of a magnesium oxide target and an M target in a PVD process chamber.
In some embodiments, the second barrier layer 25b is [ magnesium oxide/M ]]nThe structure of the magnesium oxide is a doped conductive material M sub-layer which is inserted in the magnesium metal oxide layer once or repeatedly. Wherein n is more than or equal to 1 and less than or equal to 3, preferably, the thickness of the single-layer magnesium oxide is between 0.3 and 1.0 nanometers, and the thicknesses of the single-layer magnesium oxide are the same or different; preferably, M is Mg, Al, Si, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Sr, YY, Zr, Nb, Mo, technetium Tc, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Pt, Au or a combination thereof, the thickness of the single layer M is b, 0<b is less than or equal to 0.1 nm, and the thickness of the single layer M can be the same or different. Each layer of magnesium oxide is generated by adopting para-oxygenThe magnesium oxide target material is subjected to sputtering deposition, or the magnesium oxide target material is subjected to sputtering deposition and then oxidized to form magnesium oxide.
In some embodiments, the total thickness of the second barrier layer 25b is between 0.5 nm and 1.5 nm.
In an embodiment of the present application, the capping layer 27 is made of a multi-layer material of tungsten W, zinc Zn, aluminum Al, copper Cu, calcium Ca, titanium Ti, vanadium V, chromium Cr, molybdenum Mo, magnesium Mg, niobium Nb, ruthenium Ru, hafnium Hf, platinum Pt, or a combination thereof, and has a total thickness of 0.5 nm to 10.0 nm.
From the critical current (I)c0) The formula (2) as (3) shows that the critical current (I)c0) Inversely proportional to the spin polarizability (η), when the magnetization directions of the first and second reference layers are antiparallel, the spin polarizability (η) can be effectively increased, thereby reducing the critical current (I)c0). The method is beneficial to the improvement of the read-write performance and the reliability of the MRAM device.
Referring to fig. 2 to 3B, in an embodiment of the present application, a memory cell of a magnetic random access memory includes any one of the above-described magnetic tunnel junction 20 structures, a top electrode 30 disposed above the magnetic tunnel junction 20 structure, and a bottom electrode 10 disposed below the magnetic tunnel junction 20 structure.
In an embodiment of the present application, the material of the seed layer 21 of the magnetic tunnel junction 20 is one or a combination of Ti, TiN, Ta, TaN, W, WN, Ru, Pd, Cr, CrCo, Ni, CrNi, CoB, FeB, CoFeB, etc. selected from Ti, TiN, Ta, TaN, W, WN, Ru, Pd, Cr, CrCo, Ni, CoFeB, and CoFeB. In some embodiments, the seed layer 21 may be selected from one of tantalum Ta/ruthenium Ru, tantalum Ta/platinum Pt/ruthenium Ru, and the like.
In an embodiment of the present application, an annealing operation is performed at a temperature greater than 350 ℃ for at least 30 minutes after the bottom electrode, seed layer, antiferromagnetic layer, lattice partition layer, reference layer, barrier layer, free layer, capping layer, and top electrode are deposited. The first reference layer 24a, the second reference layer 24b and the free layer 26 are transformed from an amorphous structure to a crystal structure of a body centered cubic structure BCC (001) by the template action of the first barrier layer 25a and the second barrier layer 25b of a NaCl type structure face centered cubic structure FCC (001).
According to the magnetic tunnel junction unit structure, the thermal stability is improved beneficially through a symmetrical structure design and a double free layer design; secondly, through the design of the double barrier layers, the stable and enough tunneling magnetic resistance rate can be kept while the total resistance area product is not amplified, the critical current of the MTJ unit can be effectively reduced, and the improvement of the read/write performance of the MRAM circuit and the manufacture of the subminiature MRAM circuit are greatly facilitated.
The terms "in one embodiment of the present application" and "in various embodiments" are used repeatedly. This phrase generally does not refer to the same embodiment; it may also refer to the same embodiment. The terms "comprising," "having," and "including" are synonymous, unless the context dictates otherwise.
Although the present application has been described with reference to specific embodiments, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the application, and all changes, substitutions and alterations that fall within the spirit and scope of the application are to be understood as being covered by the following claims.
Claims (10)
1. A magnetic tunnel junction structure with a symmetrical structure is arranged in a magnetic random access memory unit, and comprises a covering layer, a free layer, a barrier layer, a reference layer, a lattice partition layer, an antiferromagnetic layer and a seed layer, wherein the barrier layer, the reference layer, the lattice partition layer and the antiferromagnetic layer are of a double-layer structure, the double-layer structure is divided and symmetrically arranged on the upper side and the lower side of the free layer, and the free layer comprises the following components from bottom to top:
a first free layer which is a variable magnetic polarization layer, and has a single-layer or multi-layer structure formed of a magnetic metal alloy or a compound thereof;
a vertical anisotropy enhancement layer disposed on the first free layer, the vertical anisotropy enhancement layer being formed of a non-magnetic metal oxide containing a sub-atom interlayer or a doped material;
a second free layer disposed on the perpendicular anisotropy enhancing layer, the second free layer being a variable magnetic polarization layer and having a single-layer or multi-layer structure formed of a magnetic metal alloy or a compound thereof;
wherein the perpendicular anisotropy enhancement layer is to enable magnetic coupling of the first free layer with a second free layer.
2. The magnetic tunnel junction structure with symmetric structure of claim 1, wherein the total thickness of the first free layer is 1.2 nm to 3 nm, and the material of the first free layer is selected from cofeb, feb, cofeb/cofeb, fe/cofeb, cofeb/(w, mo, hf)/cofeb, fe/cofeb/(w, mo, hf)/cofeb, preferably cofeb/(w, mo, hf)/cofeb, fe/cofeb/(w, mo, hf)/cofeb, or the like, preferably cofeb/(w, mo, hf)/cofeb, or cofeb/(w, mo, hf)/cofeb, molybdenum, hafnium)/cofeb alloy structures; the total thickness of the second free layer is 1.2 nm to 3 nm, the material of the second free layer is selected from the group consisting of cofeb, eb, cofeb/cofeb, cofeb/fe, cofeb/co, cofeb/(w, mo, hf)/cofeb/fe, cofeb/(w, mo, hf)/cofeb/co or cofeb/(w, mo, hf)/cofeb/co, and the like, and further, cofeb/(w, mo, hf)/cofeb/(w, mo, hf), cofeb/co, and the like, and further, cofeb/(w, mo, hf)/cofeb/co or cofeb/(w), molybdenum, hafnium)/cofeb structures.
3. The magnetic tunnel junction structure of claim 1, wherein the non-magnetic metal oxide layer in the perpendicular anisotropy enhancement layer is an oxide of magnesium, aluminum, silicon, calcium, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, strontium, yttrium, zirconium, niobium, molybdenum, technetium, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, rhenium, osmium, or a combination thereof.
4. The symmetric magnetic tunnel junction structure of claim 1 wherein the perpendicular anisotropy enhancement layer is a [ nonmagnetic metal oxide layer/sub-atomic interlayer]nThe structure of the non-magnetic metal oxide layer, n is more than or equal to 1 and less than or equal to 3, preferably, the thickness of the single non-magnetic metal oxide layer is between 0.2 and 1.0 nanometers, and the thicknesses of the single non-magnetic metal oxide layers are the same or different; the thickness of the single layer subatomic interlayer is b, 0<b is less than or equal to 0.1 nm, and the thickness of the single layer subatomic interlayer can be the same or different; the subatomic interlayer is magnesium, aluminum, silicon, calcium, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, strontium, yttrium, zirconium, niobium, molybdenum, technetium, ruthenium, rhodium, palladium, silver, hafnium, tantalum, tungsten, rhenium, osmium, iridium, platinum, gold, or a combination or oxide thereof.
5. The magnetic tunnel junction structure with symmetric structure of claim 1, wherein the doped material in the vertical anisotropy enhancement layer is magnesium, aluminum, silicon, calcium, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, strontium, yttrium, zirconium, niobium, molybdenum, technetium, ruthenium, rhodium, palladium, silver, hafnium, tantalum, tungsten, rhenium, osmium, iridium, platinum, gold, or their combination, and the doped material is not more than 7% by mass.
6. The magnetic tunnel junction structure of claim 1 wherein the barrier layers comprise a first barrier layer and a second barrier layer, the reference layers comprise a first reference layer and a second reference layer, the lattice barrier layer comprises a first lattice barrier layer and a second lattice barrier layer, and the antiferromagnetic layers comprise a first antiferromagnetic layer and a second antiferromagnetic layer;
the first antiferromagnetic layer, the first crystal lattice partition layer, the first reference layer and the first barrier layer are arranged between the seed layer and the free layer from bottom to top;
the free layer and the seed layer include:
a first barrier layer disposed below the free layer and formed of a magnesium metal oxide layer;
a first reference layer disposed below the second barrier layer and formed of a ferromagnetic material and an alloy thereof;
a first lattice partition layer disposed under the second reference layer and formed of a metallic material preferably selected from, but not limited to, tantalum, niobium, molybdenum, tungsten, or a metal-combined ferromagnetic material thereof;
a first antiferromagnetic layer disposed under the second lattice partition layer and formed of a transition metal material capable of forming antiferromagnetic coupling in combination with a ferromagnetic material;
the free layer and the cover layer include:
a second barrier layer disposed on the free layer and formed of a magnesium metal oxide layer;
a second reference layer disposed on the second barrier layer and formed of a ferromagnetic material and an alloy thereof;
a second lattice partition layer disposed on the second reference layer and formed of a metal material having a low electronegativity or a metal having a low electronegativity in combination with a ferromagnetic material;
a second antiferromagnetic layer disposed on the second lattice partition layer and formed of a transition metal material capable of forming antiferromagnetic coupling in combination with a ferromagnetic material;
the second barrier layer, the second reference layer, the second lattice partition layer, the second antiferromagnetic layer, the first barrier layer, the first reference layer, the first lattice partition layer, and the first antiferromagnetic layer are symmetrically disposed on the upper and lower sides of the free layer.
The magnetization vector of the first reference layer is antiparallel to the magnetization vector of the second reference layer.
7. The symmetric magnetic tunnel junction structure of claim 6 wherein the first barrier layer and the second barrier layer are made of magnesium oxide.
8. The symmetric magnetic tunnel junction structure of claim 6 wherein the second barrier layer is formed of a magnesium metal oxide layer containing a doped conductive material.
9. The symmetric magnetic tunnel junction structure of claim 6, wherein the first barrier layer and the second barrier layer have a total thickness of 0.5 nm to 1.5 nm, respectively; the junction resistance area product of the first barrier layer is greater than the junction resistance area product of the second barrier layer.
10. A magnetic tunnel junction structure with a symmetric structure disposed in a magnetic random access memory cell, said magnetic tunnel junction comprising a multi-layer structure of a seed layer to a capping layer, said structure between said seed layer and said capping layer being the reverse of the relative positions of the layers between said seed layer and said capping layer in the magnetic tunnel junction as claimed in claims 1-9.
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