CN113140670A - Magnetic tunnel junction vertical antiferromagnetic layer and random access memory - Google Patents
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Abstract
The invention relates to the technical field of magnetic random access memories, in particular to a magnetic tunnel junction vertical antiferromagnetic layer and a random access memory, wherein the vertical antiferromagnetic layer is arranged on a storage unit of the magnetic random access memory, a vertical anisotropic field enhancement layer and a vertical antiferromagnetic layer double-layer structure are sequentially arranged from bottom to top in a magnetic tunnel junction structure with the vertical antiferromagnetic layer and are stacked above a free layer, the vertical antiferromagnetic layer is magnetically coupled with the free layer through vertical anisotropy enhancement multiplication, the thermal stability of the free layer is enhanced, and the vertical antiferromagnetic layer (pAFM) is arranged through a vertical anisotropy enhancement layer (H)KEL) to realize magnetic coupling with the Free Layer (FL), thereby enhancing the thermal stability of the Free Layer (FL), meanwhile, due to the introduction of the vertical antiferromagnetic layer (pAFM), the regulation and control of the leakage magnetic field are facilitated,the method is beneficial to the improvement of Magnetic Random Access Memory (MRAM) devices, reading/writing and storage performance, and the miniaturization of the devices.
Description
Technical Field
The invention relates to the technical field of magnetic random access memories, in particular to a magnetic tunnel junction vertical antiferromagnetic layer and a random access memory.
Background
In recent years, Magnetic Random Access Memory (MRAM) using Magnetic Tunnel Junction (MTJ) is considered as a future solid-state nonvolatile Memory, which has the characteristics of high speed reading and writing, large capacity, and low power consumption. Ferromagnetic MTJs are typically sandwich structures with a magnetic memory layer (free layer) that can change the magnetization direction to record different data; an insulating tunnel barrier layer in the middle; and the magnetic reference layer is positioned on the other side of the tunnel barrier layer, and the magnetization direction of the magnetic reference layer is unchanged.
In order to be able to record information in such a magnetoresistive element, a writing method based on Spin momentum Transfer (STT) switching technology has been proposed, and such an MRAM is called STT-MRAM. STT-MRAM is further classified into in-plane STT-MRAM and perpendicular STT-MRAM (i.e., pSTT-MRAM), which have better performance depending on the direction of magnetic polarization. In a Magnetic Tunnel Junction (MTJ) with perpendicular anisotropy (PMA), as a free layer for storing information, two magnetization directions are possessed in the perpendicular direction, that is: up and down, corresponding to "0" and "1" in the binary, respectively. In practical application, the magnetization direction of the free layer is kept unchanged when information is read or the free layer is empty; during writing, if a signal of a different state from that of the prior art is input, the magnetization direction of the free layer is inverted by one hundred and eighty degrees in the vertical direction. The ability of the free layer of a magnetic memory to maintain a constant magnetization direction in this empty state is known in the industry as data retention or thermal stability.
The requirements are different in different application scenarios. For a typical non-volatile memory, for example: the requirement of thermal stability for application in automotive electronics is to preserve data for at least ten years at 125 c or even 150 c.
Further, the Data Retention capability (Data Retention) can be calculated by the following formula:
wherein tau is the time when the magnetization vector is unchanged under the condition of thermal disturbance, tau0For the trial time (typically 1ns), E is the energy barrier of the free layer, kBBoltzmann constant, T is the operating temperature.
The Thermal Stability factor (Thermal Stability factor) can then be expressed as the following equation:
wherein, KeffIs the effective isotropic energy density of the free layer, V is the volume of the free layer, KVConstant of bulk anisotropy MsSaturation susceptibility of the free layer, demagnetization constant in the direction perpendicular to Nz, t thickness of the free layer, KiIs the interfacial anisotropy constant, DMTJThe critical dimension of the magnetic random access memory (generally referred to as the diameter of the free layer), AsFor stiffness integral exchange constant, DnThe size of the inverted nucleus (generally referred to as the diameter of the inverted nucleus) during free layer inversion. Experiments show that when the thickness of the free layer is thicker, the free layer shows in-plane anisotropy, and when the thickness of the free layer is thinner, the free layer shows vertical anisotropy, KVGenerally negligible, while the contribution of demagnetization energy to the perpendicular anisotropy is negative, so the perpendicular anisotropy comes entirely from the interfacial effect (K)i)。
At the same time, the static magnetic Field, particularly the leakage magnetic Field (Stray Field) from the reference layer, also affects the thermal stability factor of the Magnetic Random Access Memory (MRAM) magnetic memory cell, and can act as both a reinforcing and a weakening depending on the direction of magnetization applied to the Free Layer (FL). To reduce the effect of stray magnetic fields on the Free Layer (FL), a Synthetic Anti-Ferromagnetic Layer (SyAF) with a strong perpendicular anisotropy (PMA) superlattice structure is usually added below the Reference Layer (RL)
From the Reference Layer (RL) and the synthesis due to the presence of the synthetic antiferromagnetic layer (SyAF)The leakage field of the antiferromagnetic layer (SyAF) can be partially cancelled, quantitatively, and the total leakage field from the reference layer and the synthetic antiferromagnetic layer (SyAF) is defined as HStrayThen:
wherein Hk effIs a perpendicular effective anisotropy field, Hk eff＝2(Keff/(μ0Ms)). Further, defining the magnetization vector perpendicular to the free layer and upward as positive, the leakage magnetic field perpendicular to the free layer upward is positive. Then the thermal stability factor for the case where the magnetization vectors of the free layer and the reference layer are parallel or antiparallel, respectively, can be expressed as the following equation:
in addition, as the volume of the magnetic free layer is reduced, the smaller the spin-polarized current to be injected for writing or switching operation. Critical current I for write operationc0The relationship between the compound and the thermal stability is strongly related, and can be expressed as the following formula:
wherein alpha is a damping constant,
η is the spin polarizability, which is the approximate planck constant.
Further, the critical current can be expressed as the following expressions when the magnetizations are parallel and antiparallel, respectively:
in this case, the critical current of the MRAM in the parallel state and the anti-parallel state can be further controlled by controlling the leakage magnetic Field (Stray Field).
To achieve fast writing of a logic "0" or "1", a typical write requires that the write current density (J) be greater than the critical current density (J)c0). Wherein,
time of writing is tpwThen, there are:
the write current (J) exceeds the critical current (J)c0) The ratio of the fraction (J) to the critical current is J, J being J/Jc0-1。
Wherein alpha is a secondary damping coefficient,
to approximate Planck constant, MsIs the saturation susceptibility of the free layer, t is the effective thickness of the free layer, HKIs a perpendicular effective anisotropy field, kBIs the Boltzmann constant, T is the temperature, η spin polarizability, γ is the gyromagnetic ratio, Δ is the thermodynamic stability factor of the magnetic tunnel to junction (MTJ), τrelaxRelaxation time, θ0The angle is initialized for the free layer magnetization vector.
In fast caches, for example: as an alternative to SRAM, MRAM is required to have a read and write speed that matches SRAM.
In addition, MTJ, which is a core memory cell of a magnetic memory (MRAM), must also be compatible with CMOS processes and must be able to withstand long term annealing at 350 ℃ or higher; meanwhile, a Magnetic memory cell of MRAM is required to have strong Magnetic Immunity (Magnetic Immunity).
In recent years, the Critical Dimension (CD) of the magnetic Tunnel junction is getting smaller, and in order to match the impedance of the CMOS circuit, the junction Area Product (RA) is also getting smaller and smaller, and at the same time, it is required to maintain a relatively high Tunneling Magnetoresistance Ratio (TMR) to ensure a high read speed.
Disclosure of Invention
Aiming at the defects of the prior art, the invention discloses a magnetic tunnel junction vertical antiferromagnetic layer and a random access memory, and in order to solve the problems in the prior art, the invention provides the following technical scheme for realizing:
in a first aspect, the present invention provides a magnetic tunnel junction perpendicular antiferromagnetic layer, the perpendicular antiferromagnetic layer is disposed in a magnetic random access memory storage unit, a perpendicular anisotropy field enhancement layer and a perpendicular antiferromagnetic layer bilayer structure are sequentially disposed from bottom to top in a magnetic tunnel junction structure having the perpendicular antiferromagnetic layer and stacked above a free layer, and the perpendicular antiferromagnetic layer is magnetically coupled to the free layer by perpendicular anisotropy enhancement multiplication, thereby enhancing thermal stability of the free layer.
Further, the total thickness of the perpendicular anisotropy enhancing layer is 0.3 nm-1.4 nm.
Further, the material of the vertical anisotropy enhancing layer is an oxide or nitride of X, wherein X is Mg, Co, Fe, Pt, Au, Cu, Ru, Zn, Al, Mo, Ti, V, Cr, Y, Zr, Nb, Tc, Ru, Ni, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Si or a combination thereof.
Or the material of the vertical anisotropy enhancement layer is MgO/X with a double-layer structure, wherein X is Co, Fe, Pt, Au, Cu, Ru, Zn, Al, Mo, Ti, V, Cr, Y, Zr, Nb, Tc, Ru, Ni, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Si or the combination of the Co, Fe, Pt, Au, Cu, Ru, Y, Nb, Tc, Ru, Ni, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir and Si.
Furthermore, the free layer obtains an additional source of interfacial anisotropy through perpendicular anisotropy, thereby enhancing its thermal stability.
Further, the total thickness of the perpendicular antiferromagnetic layer is 0.5nm to 20 nm.
Go further forwardIn one step, the vertical antiferromagnetic layer is made of IrMn, PtMn, PdMn, NiMn, MnAu, FeRh, NiO, CoO, Cr2O3、BiFeO3、MnF2、FeMn、CuMnAs、MnSiN2、Sr2IrO4MnTe, or a combination thereof.
In a second aspect, the present invention provides a magnetic random access memory, comprising a memory cell including the perpendicular antiferromagnetic layer having the magnetic tunnel junction as described in the first aspect, and further comprising a bottom electrode and a top electrode, wherein the memory cell comprises a seed layer, a synthetic antiferromagnetic layer, a lattice-blocking layer, a reference layer, a barrier layer, a free layer, a perpendicular anisotropy field enhancement layer, a perpendicular antiferromagnetic layer, a capping layer, and a top electrode, which are stacked.
Furthermore, the bottom electrode is made of Ti, TiN, Ta, TaN, W, Ru, WN or the combination thereof, and after the deposition is carried out by adopting a physical vapor deposition mode, the bottom electrode is subjected to planarization treatment so as to achieve the surface flatness for manufacturing the magnetic tunnel junction.
Further, the top electrode is selected from Ta, TaN, TaN/Ta, Ti, TiN, TiN/Ti, W, WN, WN/W or their combination.
Further, the bottom electrode, the seed layer, the synthetic antiferromagnetic layer, the lattice partition layer, the reference layer, the barrier layer, the free layer, the vertical anisotropy field enhancement layer, the vertical antiferromagnetic layer, the capping layer and the top electrode are deposited and then annealed at a temperature of not less than 350 ℃ for at least 30 minutes.
The invention has the beneficial effects that:
the perpendicular antiferromagnetic layer (pAFM) of the present invention is enhanced by a perpendicular anisotropy layer (H)KEL) realizes the magnetic coupling with the Free Layer (FL), thereby enhancing the thermal stability of the Free Layer (FL), and simultaneously, the introduction of the vertical antiferromagnetic layer (pAFM) is beneficial to the regulation and control of a leakage magnetic field, the improvement of the Magnetic Random Access Memory (MRAM) device, the reading/writing and the storage performance, and the miniaturization of the device.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of a MRAM memory cell according to an embodiment of the invention;
FIG. 2 shows a perpendicular anisotropy enhancement layer (H) in an MRAM cell in an embodiment of the inventionKEL).
FIG. 3 shows an embodiment of the present invention in which the MRAM cell includes a Free Layer (FL), a perpendicular anisotropy enhancement layer (H)KEL) and a perpendicular antiferromagnetic layer (pAFM).
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
The embodiment discloses a perpendicular antiferromagnetic layer of a magnetic tunnel junction, the perpendicular antiferromagnetic layer is arranged on a storage unit of a magnetic random access memory, a perpendicular anisotropy field enhancement layer and a perpendicular antiferromagnetic layer double-layer structure are sequentially arranged from bottom to top in a magnetic tunnel junction structure with the perpendicular antiferromagnetic layer and are stacked above a free layer, and the perpendicular antiferromagnetic layer is magnetically coupled with the free layer through perpendicular anisotropy enhancement multiplication, so that the thermal stability of the free layer is enhanced.
The total thickness of the vertical anisotropic enhancement layer is 0.3 nm-1.4 nm. The material of the vertical anisotropy enhancement layer is oxide or nitride of X, wherein X is Mg, Co, Fe, Pt, Au, Cu, Ru, Zn, Al, Mo, Ti, V, Cr, Y, Zr, Nb, Tc, Ru, Ni, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Si or combination thereof.
Or the material of the vertical anisotropy enhancement layer is MgO/X with a double-layer structure, wherein X is Co, Fe, Pt, Au, Cu, Ru, Zn, Al, Mo, Ti, V, Cr, Y, Zr, Nb, Tc, Ru, Ni, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Si or the combination of the Co, Fe, Pt, Au, Cu, Ru, Y, Nb, Tc, Ru, Ni, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir and Si.
The free layer obtains an additional source of interfacial anisotropy through perpendicular anisotropy, thereby enhancing its thermal stability.
The total thickness of the vertical antiferromagnetic layer is 0.5 nm-20 nm. The vertical antiferromagnetic layer is made of IrMn, PtMn, PdMn, NiMn, MnAu, FeRh, NiO, CoO and Cr2O3、BiFeO3、MnF2、FeMn、CuMnAs、MnSiN2、Sr2IrO4MnTe, or a combination thereof.
Perpendicular antiferromagnetic layer (pAFM) through perpendicular anisotropy enhancement layer (H)KEL) realizes the magnetic coupling with the Free Layer (FL), thereby enhancing the thermal stability of the free layer, and simultaneously, due to the introduction of the vertical antiferromagnetic layer (pAFM), the magnetic coupling method is very beneficial to the regulation and control of a leakage magnetic field, is very beneficial to the improvement of Magnetic Random Access Memory (MRAM) devices, reading/writing and storage performance, and is very beneficial to the miniaturization of the devices.
Example 2
This embodiment discloses that as shown in fig. 1, the magnetic random access memory cell includes a seed layer 21, a synthetic antiferromagnetic layer 22, a lattice-blocking layer 23, a reference layer 24, a barrier layer 25, a free layer 26, a vertical anisotropy field enhancement layer 27, a vertical antiferromagnetic layer 28, and a capping layer 29, which are stacked.
A magnetic tunnel junction perpendicular antiferromagnetic layer cell structure is provided. In a Magnetic Tunnel Junction (MTJ) structure with a Perpendicular antiferromagnetic Anti-Ferromagnetic Layer (pAFM)28 as shown in FIG. 2, a Perpendicular anisotropy field enhancement Layer (H) as shown in FIG. 3K Enhancement Layer，HKEL)27 and a perpendicular antiferromagnetic layer (pAFM)28 are stacked over the free layer.
Perpendicular anisotropy enhancement layer (H)KEL)27 is 0.3nm to 1.4nm in total thickness, and the material of the vertical anisotropy enhancing layer is an oxide or nitride of X, wherein X is Mg, Co, Fe, Pt, Au, Cu, Ru, Zn, Al, Mo, Ti, V, Cr, Y, Zr, Nb, Tc, Ru, Ni, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Si or a combination thereof.
Or the material of the vertical anisotropy enhancement layer is MgO/X with a double-layer structure, wherein X is Co, Fe, Pt, Au, Cu, Ru, Zn, Al, Mo, Ti, V, Cr, Y, Zr, Nb, Tc, Ru, Ni, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Si or the combination of the Co, Fe, Pt, Au, Cu, Ru, Y, Nb, Tc, Ru, Ni, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir and Si.
Perpendicular anisotropy (H)KEL)27 provides an additional source of interfacial anisotropy for the Free Layer (FL)26, thereby enhancing its thermal stability.
The total thickness of the vertical antiferromagnetic layer (pAFM)28 is 0.5 nm-20 nm, and the material of the vertical antiferromagnetic layer is IrMn, PtMn, PdMn, NiMn, MnAu, FeRh, NiO, CoO, Cr2O3、BiFeO3、MnF2、FeMn、CuMnAs、MnSiN2、Sr2IrO4MnTe, or a combination thereof.
Perpendicular antiferromagnetic layer (pAFM)28 through perpendicular anisotropy enhancement layer (H)KEL)27 achieves magnetic coupling with the Free Layer (FL)26, thereby enhancing the thermal stability of the Free Layer (FL)26, and at the same time, due to the introduction of the perpendicular antiferromagnetic layer (pAFM)28, it is very beneficial to the regulation of the leakage magnetic field, and is very beneficial to the enhancement of the read/write and storage performances of the Magnetic Random Access Memory (MRAM) device, and is very beneficial to the miniaturization of the device.
Example 3
In the present embodiment, a magnetic random access memory is provided, which includes the memory cell as described above, and further includes a bottom electrode 10 and a top electrode 30, wherein the bottom electrode 10, the seed layer 21, the synthetic antiferromagnetic layer 22, the lattice blocking layer 23, the reference layer 24, the barrier layer 25, the free layer 26, the vertical anisotropy field enhancement layer 27, the vertical antiferromagnetic layer 28, the capping layer 29, and the top electrode 30 are sequentially stacked.
The bottom electrode 10 is made of Ti, TiN, Ta, TaN, W, Ru, WN or a combination thereof, and is generally implemented by Physical Vapor Deposition (PVD), and after Deposition, planarization of the bottom electrode 10 is usually selected to achieve surface flatness for fabricating the magnetic tunnel junction.
The seed layer 21 is generally composed of Ta, Ti, TiN, TaN, W, WN, Ru, Pt, Ni, Cr, CrNi, CrCo, CoFeB or a combination thereof, and may have a multilayer structure of Ta/Ru, CoFeB/Ta/Pt, CoFeB/Ta/Ru, CoFeB/Ta/Ru/Pt, Ta/Pt or Ta/Pt/Ru. To optimize the crystal structure of the subsequent synthetic antiferromagnetic layer 220.
The Synthetic Anti-ferromagnetic layer (SyAF)22 has [ Co/Pt ]]nCo/Ru、[Co/Pt]nCo/Ir、[Co/Pt]nCo/Ru/Co、[Co/Pt]nCo/Ir/Co、[Co/Pt]nCo/Ru/Co[Pt/Co]mOr [ Co/Pt ]]nCo/Ir/Co[Pt/Co]mA superlattice structure, wherein n>m.gtoreq.1, the synthetic antiferromagnetic layer 20 has a strong perpendicular anisotropy (PMA).
The reference layer 24 is magnetically polarization invariant under ferromagnetic coupling of the antiferromagnetic layer 22 and is typically comprised of Co, Fe, Ni, CoFe, CoFeB, combinations thereof or the like. Since the synthetic antiferromagnetic layer (SyAF)22 has a Face Centered Cubic (FCC) crystal structure and the reference layer 24 has a Body Centered Cubic (BCC) crystal structure, the lattices are not matched, and in order to achieve the transition and ferromagnetic coupling from the synthetic antiferromagnetic layer (SyAF)22 to the reference layer 24, a lattice-blocking layer 23 is typically added between two layers of material, typically Ta, W, Mo, Hf, Fe, Co (Ta, Zr, Nb, V, Cr, W, Mo or Hf), Fe (Ta, Zr, Nb, V, Cr, W, Mo or Hf), FeCo (Ta, Zr, Nb, V, Cr, W, Mo or Hf) or FeCoB (Ta, Zr, Nb, V, Cr, W, Mo or Hf), etc.
The total thickness of the barrier layer 25 is 0.6nm to 1.5 nm. The material is MgO, and the method can be realized by directly sputtering and depositing the MgO target material, or by firstly sputtering and depositing Mg on the Mg target material and then changing the Mg into the MgO through an oxidation process.
The free layer 26 is a single or multi-layer material structure comprising Fe, FeC, FeCo, FeCoB, FeCoBC, FeB, FeC, CoB, CoC, W, Mo, V, Nb, Cr, Hf, Ti, Zr, Ta, Sc, Y, Zn, Ru, Os, Ru, Rh, Ir, Pd or Pt structure. Further, optionally, a plasma process may be used to perform surface plasma treatment after the free layer deposition for surface modification or selective removal.
The material of the cap layer 29 is Zr, Nb, Ru, Ir, Ti, V, Cr, W, Hf, Mo, Tc, Y, or a combination thereof. The thickness is z, and the z is more than 0.0 and less than or equal to 15.0 nm.
The top electrode 30 may be selected from Ta, TaN, TaN/Ta, Ti, TiN, TiN/Ti, W, WN, WN/W or combinations thereof.
Further, after the bottom electrode, the seed layer, the synthetic antiferromagnetic layer, the lattice partition layer, the reference layer, the barrier layer, the free layer, the vertical anisotropy field enhancing layer, the vertical antiferromagnetic layer, the capping layer and the top electrode are deposited, an annealing operation is performed at a temperature of not less than 350 ℃ for at least 30 minutes.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. The vertical antiferromagnetic layer is arranged on a storage unit of a magnetic random access memory and is characterized in that the magnetic tunnel junction comprises a reference layer, a barrier layer and a free layer which are sequentially arranged from bottom to top, a vertical anisotropy field enhancement layer and a vertical antiferromagnetic layer double-layer structure are sequentially arranged from bottom to top and are stacked above the free layer, and the vertical antiferromagnetic layer is magnetically coupled with the free layer through the vertical anisotropy enhancement layer to enhance the thermal stability of the free layer.
2. The magnetic tunnel junction perpendicular antiferromagnetic layer of claim 2, wherein the total thickness of the perpendicular anisotropy enhancement layer is 0.3nm to 1.4 nm.
3. The magnetic tunnel junction perpendicular antiferromagnetic layer of claim 1, wherein the material of the perpendicular anisotropy enhancing layer is an oxide or nitride of X, where X is Mg, Co, Fe, Pt, Au, Cu, Ru, Zn, Al, Mo, Ti, V, Cr, Y, Zr, Nb, Tc, Ru, Ni, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Si, or combinations thereof.
4. The magnetic tunnel junction perpendicular antiferromagnetic layer of claim 1, wherein the material of the perpendicular anisotropy enhancing layer is a bilayer MgO/X, where X is Co, Fe, Pt, Au, Cu, Ru, Zn, Al, Mo, Ti, V, Cr, Y, Zr, Nb, Tc, Ru, Ni, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Si, or combinations thereof.
5. The magnetic tunnel junction perpendicular antiferromagnetic layer of claim 5, wherein the total thickness of the perpendicular antiferromagnetic layer is 0.5nm to 20 nm.
6. The magnetic tunnel junction perpendicular antiferromagnetic layer of claim 1, wherein the material of the perpendicular antiferromagnetic layer is IrMn, PtMn, PdMn, NiMn, MnAu, FeRh, NiO, CoO, Cr2O3、BiFeO3、MnF2、FeMn、CuMnAs、MnSiN2、Sr2IrO4MnTe, or a combination thereof.
7. A magnetic random access memory comprising a memory cell comprising the magnetic tunnel junction perpendicular antiferromagnetic layer as recited in any one of claims 1-6, further comprising a bottom electrode and a top electrode, wherein the memory cell comprises a seed layer, a synthetic antiferromagnetic layer, a lattice-blocking layer, a reference layer, a barrier layer, a free layer, a perpendicular anisotropy field enhancement layer, a perpendicular antiferromagnetic layer, a capping layer, and a top electrode, which are stacked.
8. The magnetic random access memory of claim 7 wherein the free layer is a single or multi-layer material structure and is selected from the group consisting of Fe, FeC, FeCo, FeCoB, FeCoBC, FeB, FeC, CoB, CoC, W, Mo, V, Nb, Cr, Hf, Ti, Zr, Ta, Sc, Y, Zn, Ru, Os, Ru, Rh, Ir, Pd, and Pt.
9. The magnetic random access memory of claim 7 wherein the capping layer is Zr, Nb, Ru, Ir, Ti, V, Cr, W, Hf, Mo, Tc, Y or combinations thereof. The thickness is z, and the z is more than 0.0 and less than or equal to 15.0 nm.
10. The magnetic random access memory according to claim 7, wherein the bottom electrode, the seed layer, the synthetic antiferromagnetic layer, the lattice blocking layer, the reference layer, the barrier layer, the free layer, the vertical anisotropy field enhancing layer, the vertical antiferromagnetic layer, the capping layer and the top electrode are deposited and then annealed at a temperature of not less than 350 ℃ for at least 30 minutes.
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