CN101320616A - Self-rotation valve with vertical magnetic anisotropy - Google Patents
Self-rotation valve with vertical magnetic anisotropy Download PDFInfo
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- CN101320616A CN101320616A CNA2008100352344A CN200810035234A CN101320616A CN 101320616 A CN101320616 A CN 101320616A CN A2008100352344 A CNA2008100352344 A CN A2008100352344A CN 200810035234 A CN200810035234 A CN 200810035234A CN 101320616 A CN101320616 A CN 101320616A
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Abstract
This invention belongs to the technical field of magnetic recording, specifically is a spin valve with vertical magnetic anisotropy. Ferromagnetic layers of upper, middle and lower adopt Co/Ni multi-layer film structure and are made by utilizing a method of magnetron sputtering to deposit under the normal temperature. The Co/Ni multi-layer film includes the feature of a preferred direction of magnetization vertical with a film surface because of larger surface and interface anisotropy, and the properties, such as the coefficient of the magnetic vertical anisotropy, the coercive force can be modulated through thicknesses, periodicity and buffer layer of layers of Co, Ni. In addition, Co and Ni are the magnetic materials and have bigger spin polarizability. A whole spin valve and a pseudo spin valve GMR signal can achieve 5/4 to 7.7%; and the exchange bias field of the whole spin valve can achieve more than 4500e, and the thermal stability can achieve 250 degrees centigrade. This invention has an important application value in the computer hard disk reading head, MRAM and the other spin electronic apparatuses.
Description
Technical field
The invention belongs to the Magnetographic Technology field, be specifically related to a kind of non-volatile magnetic random memory and other spin electric device, relate in particular to a kind of Spin Valve with perpendicular magnetic anisotropic.
Technical background
Because traditional Spin Valve utilization is magnetic anisotropy in the face of magnetic thin film, in being prepared into following electronic equipment during needed nanometer scale device owing to border magnetic eddy current effect has a strong impact on performance.Along with the continuous development of information technology, the requirement of magnetic storage technology is also improved constantly.In order to adapt to the storage target of super-high density, no matter be at hard disc of computer, still in MRAM, all require the Spin Valve unit to be reduced to the hundreds of even the size of nanometer scale what time.Be reduced to a certain degree but work as size, the free layer that has horizontal magnetic anisotropy in traditional Spin Valve has more serious vortex effect, makes the upset of free layer irregular step occur.This phenomenon can produce huge noise, and causes the instability of whole system, has become one of key problem in the high density mram research and development at present.
List of references:
[1]B.N.Engel，et?al.，IEEE?Trans.Magn.41，132(2005).
[2]J.Shi，S.Tehrani，and?M.R.Scheinfein，Appl.Phys.Lett.76，2588(2000).
[3]N.Nishimura，et?al.，J.Appl.Phys.91，5246(2002)；M.S.Lin，et?al.，J.Appl.Phys.99，08T106(2006).
[4]X.Zhu?and?Jian-Gang?Zhu，IEEE?Trans.Magn.42，2739(2006).
[5]S.Mangin，et?al.，Nature?Materials?5，210(2006).
[6]H.Meng?and?Jian-Ping?Wang，Appl.Phys.Lett.88，172506(2006).
[7]T.Seki?et?al.，Appl.Phys.Lett.88，172504(2006)；89，172504(2006).
[8]R.Law，R.Sbiaa，T.Liew，T.C.Chong，Appl.Phys.Lett.91，242504(2007).
[9]N.Thiyagarajah，S.Bae，H.W.Joo，et?al.，Appl.Phys.Lett.92，062504(2008).
Summary of the invention
The objective of the invention is to propose a kind of Spin Valve that can be used for the high density magnetic storage.
The Spin Valve that the present invention proposes is a kind of novel Spin Valve device with perpendicular magnetic anisotropic.The present invention introduces the Co/Ni multi-layer film structure in the Spin Valve first, as the free layer and the reference layer of Spin Valve, makes Spin Valve have the magnetic anisotropy of vertical direction, has satisfied the application requirements of Spin Valve device in nanometer scale.
The structure of the Spin Valve device that the present invention proposes is as follows: be divided into 6 layers from top to bottom altogether, be successively: resilient coating, free layer, Cu intermediate layer, reference layer, inverse ferric magnetosphere and protective layer, and shown in Fig. 1 (a).This structure is referred to as complete Spin Valve.In this structure, can not have inverse ferric magnetosphere yet, at this moment, be referred to as counterfeit Spin Valve, shown in Fig. 1 (b).Require the coercive force of reference layer bigger than free layer.The effect of resilient coating mainly is to avoid owing to reasons such as substrate surface pattern produce harmful effect to Spin Valve character, and also can induce the crystal orientation of upper layer of material.Free layer and reference layer adopt the higher ferromagnetic material of spin polarizability.The effect of inverse ferric magnetosphere is the pinning reference layer, needs to adopt antiferromagnet.Protective layer is in order to prevent film oxidation, the general metal that is difficult for oxidation that adopts.
In the said structure, resilient coating 2 adopts the Ta/Cu duplicature, and wherein, Ta tunic thickness is 1-10nm, and Cu tunic thickness is 0.6-3.0nm.Free layer adopts the Ni/Co multilayer film, and wherein the Ni layer is following, and the Co layer is last, and thickness is respectively Ni 0.50-0.70nm, and Co 0.15-0.25nm, the periodicity of multilayer film are 3-7 cycle.The Cu intermediate layer thickness is 2.1-3.3nm.Reference layer adopts the Co/Ni multilayer film, and wherein the Co layer is following, and the Ni layer is last, and thickness is respectively Co:0.15-0.25nm, and Ni:0.50-0.70nm, the periodicity of multilayer film are 3-7 cycle.Inverse ferric magnetosphere in the complete Spin Valve adopts Fe
50Mn
50, thickness is 6-20nm.Protective layer adopts Ta, and thickness is 1-10nm.
Sample among the present invention adopts magnetron sputtering apparatus at room temperature to prepare, and the detailed process of preparation is, clean corning glass is put into specimen holder as substrate layer 1, is sent to main chamber through sample cavity, treats that vacuum reaches 5 * 10
-8When Torr is following, beginning layer by layer deposition film, each metallic film all adopts direct current sputtering, and power is 60-80W, is working gas with the argon gas, and sputtering pressure is 2.5-6mTorr.For complete Spin Valve, after at room temperature deposition is finished, from sputtering equipment, take out, at magnetic field 3000Oe, 150 ℃ of vacuum annealings after 10 minutes character can reach best.
Complete Spin Valve that designs among the present invention and counterfeit Spin Valve GMR signal can reach 5.4-7.7%, the exchange bias field of complete Spin Valve can reach more than the 450Oe, thermal stability can reach 250 ℃ (promptly after annealing under 250 ℃, the GMR signal reduces value less than peaked 10%).The present invention proposes a kind of novel spin valve structure with perpendicular magnetic anisotropic.This novel spin valve structure can be used for the read head of hard disc of computer, and the non-volatile magnetic random memory of super-high density (Magnetic RandomAccess Memory, MRAM), in perhaps following other spin electric device.
Description of drawings
Fig. 1 is the structural diagrams of Spin Valve of the present invention.Wherein, (a) being complete Spin Valve, (b) is counterfeit Spin Valve.
Fig. 2 is counterfeit Spin Valve Corning Glass/Ta 3nm/Cu 0.6-3.0nm/[Ni 0.59nm/Co 0.33nm]
3/ Cu2.3nm/[Co 0.25nm/Ni 0.59nm]
5The MOKE of/Ta 3nm line and the GMR line of whirling of whirling.Wherein (a) is (f) corresponding to Cu0.6nm; (b), (g) corresponding to Cu 1.2nm; (c), (h) corresponding to Cu 1.8nm; (d), (i) corresponding to Cu 2.4nm; (e), (j) corresponding to Cu 3.0nm.
Fig. 3 is counterfeit Spin Valve Corning Glass/Ta 3nm/Cu 1.4nm/[Ni 0.59nm/Co 0.33nm]
3/ Cu2.3nm/[Co 0.25nm/Ni0.59nm]
4-7The MOKE of/Ta 3nm line and the GMR line of whirling of whirling.Wherein (a) is 4 cycles corresponding to Co/Ni multilayer film in the reference layer (e); (b), (f) it is 5 cycles corresponding to Co/Ni multilayer film in the reference layer; (c), (g) it is 6 cycles corresponding to Co/Ni multilayer film in the reference layer; (d), (h) it is 7 cycles corresponding to Co/Ni multilayer film in the reference layer.
Fig. 4 is counterfeit Spin Valve Corning Glass/Ta 3nm/Cu 1.4nm/[Ni 0.59nm/Co 0.33nm]
3/ Cu2.1-3.3nm/[Co 0.25nm/Ni 0.59nm]
5The MOKE of/Ta 3nm line and the GMR line of whirling of whirling.Wherein (a) is (e) corresponding to Cu 2.1nm; (b), (f) corresponding to Cu 2.4nm; (c), (g) corresponding to Cu 2.7nm; (d), (h) corresponding to Cu 3.3nm.
Fig. 5 is complete Spin Valve Corning Glass/Ta 3nm/Cu 1.4nm/[Ni 0.59nm/Co 0.33nm]
3/ Cu 2.3nm/[Co 0.25nm/Ni 0.59nm]
5/ FeMn 6, the MOKE of 10nm/Ta 3nm line and the GMR line of whirling of whirling.Wherein, the curve of closed square is represented the Spin Valve of FeMn 6nm; The open circles curve is represented the Spin Valve of FeMn 10nm.
Fig. 6 is complete Spin Valve Corning Glass/Ta 3nm/Cu 1.4nm/[Ni 0.59nm/Co 0.33nm]
3/ Cu 2.3nm/[Co 0.25nm/Ni 0.59nm]
5/ FeMn 10nm/Ta 3nm, in different temperatures, 3000Oe is the GMR signal variation diagram of annealing after 10 minutes down.
Number in the figure: 1 is substrate, and 2 is resilient coating, and 3 is free layer, and 4 is the CU intermediate layer, and 5 is reference layer, and 6 is inverse ferric magnetosphere, and 7 is protective layer.
Embodiment
The invention is further illustrated by the following examples.
Structure: Corning Glass/Ta 3nm/Cu 0.6-3.0nm/[Ni 0.59nm/Co 0.33nm]
3/ Cu 2.3nm/[Co 0.25nm/Ni 0.59nm]
5/ Ta 3nm.
This example is that one group of Cu buffer layer thickness is the counterfeit Spin Valve of 0.6nm-3.0nm.As shown in Figure 2, when the thickness of Cu when 0.6nm changes to 3.0nm, this organizes counterfeit Spin Valve and all shows reasonable magnetic perpendicular magnetic anisotropy, and the GMR signal is all more than 5.7%.The Cu resilient coating can destroy the magnetic perpendicular magnetic anisotropy less than 0.6nm, can make the GMR signal gets too small greater than 3.0nm.
Structure: Corning Glass/Ta 3nm/Cu 1.4nm/[Ni 0.59nm/Co 0.33nm]
3/ Cu 2.3nm/[Co 0.25nm/Ni0.59nm]
4-7/ Ta 3nm
This example is the counterfeit Spin Valve sample of one group of reference layer Co/Ni multilayer film periodicity from 4-7.As shown in Figure 3, increase at periodicity at 6 o'clock from 4, the GMR signal increases to 7.72% from 7.12%, and magnetic perpendicular magnetic anisotropy is preferably all arranged.
Structure: Corning Glass/Ta 3nm/Cu 1.4nm/[Ni 0.59nm/Co 0.33nm]
3/ Cu 2.1-3.3nm/[Co 0.25nm/Ni 0.59nm]
5/ Ta 3nm
This example is a series of counterfeit Spin Valve of interlayer Cu thickness from 2.1-3.3nm.As shown in Figure 4, intermediate layer thickness increases to 3.3nm from 2.1nm, and the GMR signal is reduced to 5.68% from 7.69%, can both satisfy the demand, and the magnetic perpendicular magnetic anisotropy is not received influence.
Structure: Corning Glass/Ta 3nm/Cu 1.4nm/[Ni 0.59nm/Co 0.33nm]
3/ Cu 2.3nm/[Co 0.25nm/Ni0.59nm]
5/ FeMn 6,10nm/Ta 3nm
This example is two complete vertical spin valves with different-thickness FeMn.The influence of having compared different-thickness antiferromagnet FeMn.Fig. 5 be these two Spin Valves at 150 ℃, 3000Oe is MOKE figure and the GMR signal graph of annealing after 10 minutes down.As can be seen from the figure, the inverse ferric magnetosphere of 6nm and 10nm can both have exchange biased preferably and the GMR signal.
Structure: Corning Glass/Ta 3nm/Cu 1.4nm/[Ni 0.59nm/Co 0.33nm]
3/ Cu 2.3nm/[Co 0.25nm/Ni0.59nm]
5/ FeMn 10nm/Ta 3nm
Fig. 6 be this structural integrity Spin Valve in different temperatures, 3000Oe magnetic field is the GMR signal variation diagram of annealing after 10 minutes down.As can be seen, annealing temperature is from 100 ℃ to 150 ℃, and the GMR signal has small rising, and is basicly stable afterwards about 6.10%.When annealing temperature rose to 225 ℃, the GMR signal began to occur descending, and in the time of 250 ℃, drops to 5.52%, and fall is still less than peaked 10%.
Claims (3)
1, a kind of Spin Valve with perpendicular magnetic anisotropic is characterized in that this spin valve structure is divided into 6 layers from top to bottom altogether, is successively: resilient coating, and free layer, the Cu intermediate layer, reference layer, inverse ferric magnetosphere and protective layer claim that this structure is complete Spin Valve; Perhaps few inverse ferric magnetosphere in the said structure claims that this structure is counterfeit Spin Valve;
Wherein free layer and reference layer adopt the Co/Ni multilayer film with perpendicular magnetic anisotropic respectively.
2, according to claim 1 have a perpendicular magnetic anisotropic Spin Valve, it is characterized in that in the described free layer, and the Ni layer is down, the Co layer is last, the Ni layer thickness is 0.50-0.70nm, and the Co layer thickness is 0.15-0.25nm, and the periodicity of this multilayer film Ni/Co is 3-7; In the described reference layer, the Co layer is following, and the Ni layer is last, and the Co layer thickness is 0.15-0.25nm, and the Ni layer thickness is 0.50-0.70nm, and the periodicity of this multilayer film Ni/Co is 3-7.
3, the Spin Valve with perpendicular magnetic anisotropy according to claim 1 is characterized in that described inverse ferric magnetosphere adopts FeMn, and thickness is 6-20nm.
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| Application Number | Priority Date | Filing Date | Title |
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| CNA2008100352344A CN101320616A (en) | 2008-03-27 | 2008-03-27 | Self-rotation valve with vertical magnetic anisotropy |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101692374A (en) * | 2009-10-15 | 2010-04-07 | 复旦大学 | Perpendicularly easy-axis orientated artificially synthetic antiferromagnet and pseudo-spin valve film structure |
| CN101752051A (en) * | 2010-03-05 | 2010-06-23 | 北京科技大学 | Vertical magnetic anisotropic multi-layer film |
| CN101853919A (en) * | 2010-04-22 | 2010-10-06 | 复旦大学 | Perpendicular magnetic spin valve with nano soft magnetic core |
| CN103682087A (en) * | 2013-12-27 | 2014-03-26 | 复旦大学 | Method for effectively enhancing vertical coercivity of magnetic multilayer film |
| CN104659202A (en) * | 2015-02-13 | 2015-05-27 | 西南应用磁学研究所 | Preparation method for magnetic tunnel junction thin film capable of improving magneto-resistive effect |
| CN106128753A (en) * | 2016-07-05 | 2016-11-16 | 北京科技大学 | A kind of method preparing FePt counterfeit Spin Valve material |
| CN106252022A (en) * | 2016-08-04 | 2016-12-21 | 浙江理工大学 | A kind of Sm Co base permanent magnetic thin film and preparation method thereof |
| CN106898694A (en) * | 2017-03-02 | 2017-06-27 | 复旦大学 | A kind of composite magnetic multi-layer film structure of controllable vertical exchange coupled field size |
| CN111613662A (en) * | 2020-05-27 | 2020-09-01 | 东北大学 | Bias-induced collinear antiferromagnetic material generated spin-polarized current and regulation and control method thereof |
| CN113140670A (en) * | 2020-01-16 | 2021-07-20 | 上海磁宇信息科技有限公司 | Magnetic tunnel junction vertical antiferromagnetic layer and random access memory |
| CN115602411A (en) * | 2022-09-07 | 2023-01-13 | 甘肃省科学院传感技术研究所（Cn） | Exchange bias field continuously adjustable vertical anisotropy artificial synthesis antiferromagnetic coupling multilayer film |
| CN115602411B (en) * | 2022-09-07 | 2024-05-10 | 甘肃省科学院传感技术研究所 | Perpendicular anisotropic synthetic antiferromagnetic coupling multilayer film with continuously adjustable exchange bias field |
-
2008
- 2008-03-27 CN CNA2008100352344A patent/CN101320616A/en active Pending
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101692374B (en) * | 2009-10-15 | 2015-01-07 | 复旦大学 | Perpendicularly easy-axis orientated artificially synthetic antiferromagnet and pseudo-spin valve film structure |
| CN101692374A (en) * | 2009-10-15 | 2010-04-07 | 复旦大学 | Perpendicularly easy-axis orientated artificially synthetic antiferromagnet and pseudo-spin valve film structure |
| CN101752051A (en) * | 2010-03-05 | 2010-06-23 | 北京科技大学 | Vertical magnetic anisotropic multi-layer film |
| CN101752051B (en) * | 2010-03-05 | 2011-07-20 | 北京科技大学 | Vertical magnetic anisotropic multi-layer film |
| CN101853919A (en) * | 2010-04-22 | 2010-10-06 | 复旦大学 | Perpendicular magnetic spin valve with nano soft magnetic core |
| CN101853919B (en) * | 2010-04-22 | 2012-09-05 | 复旦大学 | Perpendicular magnetic spin valve with nano soft magnetic core |
| CN103682087B (en) * | 2013-12-27 | 2016-05-25 | 复旦大学 | A kind of vertical coercitive method of magnetoresistance effect that effectively strengthens |
| CN103682087A (en) * | 2013-12-27 | 2014-03-26 | 复旦大学 | Method for effectively enhancing vertical coercivity of magnetic multilayer film |
| CN104659202A (en) * | 2015-02-13 | 2015-05-27 | 西南应用磁学研究所 | Preparation method for magnetic tunnel junction thin film capable of improving magneto-resistive effect |
| CN106128753A (en) * | 2016-07-05 | 2016-11-16 | 北京科技大学 | A kind of method preparing FePt counterfeit Spin Valve material |
| CN106128753B (en) * | 2016-07-05 | 2017-09-22 | 北京科技大学 | A kind of method for preparing the counterfeit Spin Valve materials of FePt |
| CN106252022A (en) * | 2016-08-04 | 2016-12-21 | 浙江理工大学 | A kind of Sm Co base permanent magnetic thin film and preparation method thereof |
| CN106898694A (en) * | 2017-03-02 | 2017-06-27 | 复旦大学 | A kind of composite magnetic multi-layer film structure of controllable vertical exchange coupled field size |
| CN113140670A (en) * | 2020-01-16 | 2021-07-20 | 上海磁宇信息科技有限公司 | Magnetic tunnel junction vertical antiferromagnetic layer and random access memory |
| CN111613662A (en) * | 2020-05-27 | 2020-09-01 | 东北大学 | Bias-induced collinear antiferromagnetic material generated spin-polarized current and regulation and control method thereof |
| CN115602411A (en) * | 2022-09-07 | 2023-01-13 | 甘肃省科学院传感技术研究所（Cn） | Exchange bias field continuously adjustable vertical anisotropy artificial synthesis antiferromagnetic coupling multilayer film |
| CN115602411B (en) * | 2022-09-07 | 2024-05-10 | 甘肃省科学院传感技术研究所 | Perpendicular anisotropic synthetic antiferromagnetic coupling multilayer film with continuously adjustable exchange bias field |
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