CN101752051A - Vertical magnetic anisotropic multi-layer film - Google Patents
Vertical magnetic anisotropic multi-layer film Download PDFInfo
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- CN101752051A CN101752051A CN 201010119180 CN201010119180A CN101752051A CN 101752051 A CN101752051 A CN 101752051A CN 201010119180 CN201010119180 CN 201010119180 CN 201010119180 A CN201010119180 A CN 201010119180A CN 101752051 A CN101752051 A CN 101752051A
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Abstract
The invention discloses a vertical magnetic anisotropic multi-layer film [Ni(x)/Co2Mz(y)]n of which the easily magnetized axis direction is vertical to a film plane, belongs to the field of magnetic materials. The vertical magnetic anisotropic multi-layer film is characterized in that: Co2MZ is a semimetal Heusler alloy component with a structure of L21, B2 or A2; M may be an element of Fe, Cr, Mn and the like; Z may be the element of Al, Si, Ge, B and the like; the thicknesses x and y of each layer of films are that: x is greater than 0.6 nm and smaller than 20 nm; y is greater than 0.4 nm and smaller than 5 nm; and the repeat number n of the periodic structure of the [Ni(x)/Co2Mz(y)]n is greater than 2 and smaller than 20. The vertical magnetic anisotropic multi-layer film has the advantages that: the film has a high vertical magnetic anisotropic field, capability of adjusting a coercive force by controlling the thickness of an Ni layer and a Co2MZ layer, and the coercive force remarkably lower than the coercive force of a traditional vertical magnetic anisotropic multi-layer film, so the film can be used as a ferromagnetic layer in a vertical spin valve or a magnetic tunnel junction, can overcome magnetic curliness under a small size and a vortex magnetic domain structure in application, has adjustable coercive force and can meet the use requirements of a magnetic sensor or a storage with super high sensitivity and storage density.
Description
Technical field
The invention belongs to field of magnetic material, particularly a kind of new vertical magnetic anisotropic multi-layer film, its easy axis is perpendicular to thin film planar.
Background technology
The size of information memory cell has determined the height of storage density, and the size of memory cell reduces day by day in recent years, make magnetic storage density improve constantly, so the magnetic storage technology is able to develop rapidly.The direction of magnetization of magnetic storage film is divided into and is parallel to face and perpendicular to face, i.e. magnetism anisotropic film and vertical magnetism anisotropic film in the plane.The direction of magnetization of the magnetic metal nano thin-film that widely uses is magnetic anisotropy in the plane at present, when the size of this kind film is reduced to sub-micron when following, meeting appearance magnetization is crispaturaed (magnetization curling), eddy current magnetization (Vortexmagnetization), even phenomenon such as superparamagnetism, therefore suppressed the further raising of storage density.Adopting vertical magnetism anisotropic film is that memory cell can solve the comprehensive magnetic property degeneration that dimensional effect is introduced.Perpendicular magnetic anisotropic metal nano multilayer film is that people such as S.Maat proposes [S.Maat et al. in calendar year 2001, Phys.Rev.Lett.87,087202 (2001)], the easy axle of the magnetic anisotropy of this film is perpendicular to face, when it is machined into sub-micron even littler size, can overcome simultaneously that magnetization is crispaturaed, the critical defect of magnetic anisotropy magnetic film in the planes such as eddy current magnetic domain and super paramagnetic.This shows that the vertical magnetism anisotropic film material is the critical material that solves the size bottleneck problem that the magnetic storage technical development run into, it provides a kind of valid approach for improving magnetic storage density.Vertical magnetism anisotropic film mainly contains (Co/Pt) at present
n, (Co/Ni)
n, structures such as FePt and TbCoFe (n represents the duplicature number of repetition) [H.Sakurai et al., J.Appl.Phys.102,013902 (2007)].But up to now, the performance of all vertical magnetism anisotropic films is not very desirable, is in particular in that their coercive force is too high, is difficult to upset, is not suitable for use in computer magnetic reading head or magnetic field sensor.For example present the most frequently used TbCoFe material, its coercive force is more than 1000Oe.
Summary of the invention
The object of the invention is to provide periodically multilayer film [Ni (x)/Co of a kind of perpendicular magnetic anisotropic
2MZ (y)]
nTo obtain the vertical magnetism anisotropic film of a kind of easy magnetizing axis perpendicular to the thin film planar direction, the magnetic that this novel film material not only can overcome under the small size is crispaturaed and the vortex domain structure, and has low coercive force, is fit to be applied in novel magnetic storage or the senser element.
A kind of vertical magnetic anisotropic multi-layer film, multi-layer film structure are [Ni (x)/Co
2MZ (y)]
n, Co wherein
2MZ is L2
1, B2 or A2 structure semimetal Heusler alloy compositions, M is elements such as Fe, Cr, Mn, Z is elements such as Al, Si, Ge, B, in the structure, the M position occupies for one or both elements, the Z position also occupies for one or both elements.The ratio that specifically occupies is not done requirement, but requires to guarantee that the atomic ratio of Co: M: Z is 2: 1: 1.X, y are that (0.6nm＜x＜20nm, 0.4nm＜y＜5nm), n is periodic structure [Ni (x)/Co to each tunic thickness
2MZ (y)] repetition number (2＜n＜20).
By selecting different types of Co
2MZ semimetal Heusler alloy compositions, regulate thickness x, the y of repetitive, and repetitive number n, can realize that the coercive force of film regulates between 1000Oe at 10Oe, to the 10000Oe interval, 400 ℃ of annealing rear films still keep perpendicular magnetic anisotropic between 5000Oe in the perpendicular magnetic anisotropic field.
The invention has the advantages that: [Ni (x)/Co
2MZ (y)]
nMultilayer film is perpendicular magnetic anisotropic at 0.6nm＜x＜20nm in 0.4nm＜y＜5nm and 2＜n＜20 scopes, has high perpendicular magnetic anisotropic field, by control Ni layer and Co
2The MZ layer thickness makes coercive force adjustable in the 1000Oe scope at 10Oe, and significantly is lower than the coercive force of traditional perpendicular magnetic anisotropic film such as TbCoFe.Therefore this multi-layer film material can be used as ferromagnetic layer and is applied in vertical spin valve or the magnetic tunnel-junction, the magnetic that can overcome during application under the small size is crispaturaed and the vortex domain structure, coercive force is adjustable, and the magnetic characteristic that possesses semimetal magnetic material can satisfy the instructions for use of the Magnetic Sensor or the memory of hypersensitivity and storage density.
Embodiment
According to above-mentioned multilayer film component and structure, adopt the magnetic control co-sputtering method to prepare following 20 kinds [Ni (x)/Co
2MZ (y)]
nMultilayer film is characterized in Co
2MZ is L2
1, B2 or A2 structure semimetal Heusler alloy compositions, M is elements such as Fe, Cr, Mn, Z is elements such as A1, Si, Ge, B.
| Sequence number | Material component | Easy axis | Perpendicular magnetic anisotropic field (Oe) | The coercive force (Oe) of vertical face direction |
| ??1 | ??[Ni(1)/Co 2FeAl(0.4)] 2 | Vertical face | ??9000 | ??16 |
| ??2 | ??[Ni(1)/Co 2FeAl(0.6)] 20 | Vertical face | ??10000 | ??800 |
| ??3 | ??[Ni(1.5)/Co 2FeSi(0.8)] 8 | Vertical face | ??8000 | ??100 |
| ??4 | ??[Ni(2)/Co 2FeSi(0.6)] 10 | Vertical face | ??8500 | ??120 |
| ??5 | ??[Ni(0.6)/Co 2FeAl 0.5Si 0.5(0.4)] 2 | Vertical face | ??10000 | ??10 |
| ??6 | ??[Ni(1)/Co 2FeAl 0.5Si 0.5(0.4)] 20 | Vertical face | ??10000 | ??460 |
| ??7 | ??[Ni(2)/Co 2FeSi 0.75B 0.25(1)] 3 | Vertical face | ??8000 | ??150 |
| ??8 | ??[Ni(3)/Co 2FeSi 0.75B 0.25(1)] 10 | Vertical face | ??9000 | ??520 |
| ??9 | ??[Ni(2)/Co 2CrAl(0.8)] 4 | Vertical face | ??7000 | ??90 |
| ??10 | ??[Ni(5)/Co 2CrAl(0.6)] 8 | Vertical face | ??10000 | ??180 |
| ??11 | ??[Ni(2)/Co 2Cr 0.5Fe 0.5Al(1)] 8 | Vertical face | ??7500 | ??320 |
| ??12 | ??[Ni(3)/Co 2Cr 0.5Fe 0.5Al(2)] 4 | Vertical face | ??8000 | ??560 |
| ??13 | ??[Ni(5)/Co 2Cr 0.5Fe 0.5Si(0.6)] 5 | Vertical face | ??9000 | ??220 |
| ??14 | ??[Ni(1)/Co 2MnSi(0.6)] 5 | Vertical face | ??7000 | ??290 |
| Sequence number | Material component | Easy axis | Perpendicular magnetic anisotropic field (Oe) | The coercive force (Oe) of vertical face direction |
| ??15 | ??[Ni(5)/Co 2MnSi(1)] 10 | Vertical face | ??8000 | ??200 |
| ??16 | ??[Ni(4)/Co 2MnAl(1)] 4 | Vertical face | ??5000 | ??230 |
| ??17 | ??[Ni(8)/Co 2MnAl(5)] 4 | Vertical face | ??8000 | ??150 |
| ??18 | ??[Ni(8)/Co 2MnAl 0.5Si 0.5(1)] 3 | Vertical face | ??9500 | ??90 |
| ??19 | ??[Ni(10)/Co 2MnGe(3)] 6 | Vertical face | ??10000 | ??800 |
| ??20 | ??[Ni(20)/Co 2MnGe(5)] 20 | Vertical face | ??10000 | ??1000 |
Shown in as above showing, above-mentioned [Ni (x)/Co
2MZ (y)]
nMultilayer film all is perpendicular magnetic anisotropic, the perpendicular magnetic anisotropic field between 5000Oe between the 10000Oe, coercive force between 10Oe between the 1000Oe.Sample testing shows that film still keeps perpendicular magnetic anisotropic after 400 ℃ of annealing.
Claims (2)
1. vertical magnetic anisotropic multi-layer film, it is characterized in that: multi-layer film structure is [Ni (x)/Co
2MZ (y)]
n, Co
2MZ is L2
1, B2 or A2 structure semimetal Heusler alloy compositions, M is Fe, Cr or Mn element, Z is Al, Si, Ge or B element, in the structure, the M position occupies for one or both elements, the Z position also occupies for one or both elements, and the ratio that specifically occupies is not done requirement, but requires to guarantee that the atomic ratio of Co: M: Z is 2: 1: 1; Each tunic thickness x, y are 0.6nm＜x＜20nm, 0.4nm＜y＜5nm, [Ni (x)/Co
2MZ (y)] repetition number of periodic structure is 2＜n＜20.
2. vertical magnetic anisotropic multi-layer film as claimed in claim 1 is characterized in that: between 1000Oe, to the 10000Oe interval, 400 ℃ of annealing rear films still keep perpendicular magnetic anisotropic to the coercive force of film between 5000Oe in the perpendicular magnetic anisotropic field at 10Oe.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8633555B2 (en) | 2011-12-28 | 2014-01-21 | Industrial Technology Research Institute | Magnetic sensor |
| CN106025063A (en) * | 2016-05-19 | 2016-10-12 | 华为技术有限公司 | Magnetic tunnel junction and magnetic memory |
| CN112928201A (en) * | 2019-12-05 | 2021-06-08 | 上海磁宇信息科技有限公司 | Magnetic tunnel junction structure of synthetic anti-iron layer with lattice transmission effect |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101034146A (en) * | 2006-03-10 | 2007-09-12 | 日本电气株式会社 | Magnetic sensor, method of manufacturing the same, and electronic device |
| CN101320616A (en) * | 2008-03-27 | 2008-12-10 | 复旦大学 | Self-rotation valve with vertical magnetic anisotropy |
| CN101550507A (en) * | 2009-04-17 | 2009-10-07 | 北京科技大学 | A semi-metal Heusler alloy material Co2Fe(Si<1-x>Bx) |
| CN101593601A (en) * | 2009-04-10 | 2009-12-02 | 北京科技大学 | A kind of semi-metal synthetic anti-ferromagnetic structure |
| CN101620915A (en) * | 2009-06-09 | 2010-01-06 | 北京科技大学 | Vertical magnetism anisotropic film |
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2010
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101034146A (en) * | 2006-03-10 | 2007-09-12 | 日本电气株式会社 | Magnetic sensor, method of manufacturing the same, and electronic device |
| CN101320616A (en) * | 2008-03-27 | 2008-12-10 | 复旦大学 | Self-rotation valve with vertical magnetic anisotropy |
| CN101593601A (en) * | 2009-04-10 | 2009-12-02 | 北京科技大学 | A kind of semi-metal synthetic anti-ferromagnetic structure |
| CN101550507A (en) * | 2009-04-17 | 2009-10-07 | 北京科技大学 | A semi-metal Heusler alloy material Co2Fe(Si<1-x>Bx) |
| CN101620915A (en) * | 2009-06-09 | 2010-01-06 | 北京科技大学 | Vertical magnetism anisotropic film |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8633555B2 (en) | 2011-12-28 | 2014-01-21 | Industrial Technology Research Institute | Magnetic sensor |
| CN106025063A (en) * | 2016-05-19 | 2016-10-12 | 华为技术有限公司 | Magnetic tunnel junction and magnetic memory |
| CN106025063B (en) * | 2016-05-19 | 2019-11-19 | 华为技术有限公司 | Magnetic tunnel-junction and magnetic memory |
| CN112928201A (en) * | 2019-12-05 | 2021-06-08 | 上海磁宇信息科技有限公司 | Magnetic tunnel junction structure of synthetic anti-iron layer with lattice transmission effect |
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| CN101752051B (en) | 2011-07-20 |
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