CN106025063B - Magnetic tunnel-junction and magnetic memory - Google Patents
Magnetic tunnel-junction and magnetic memory Download PDFInfo
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- CN106025063B CN106025063B CN201610339183.9A CN201610339183A CN106025063B CN 106025063 B CN106025063 B CN 106025063B CN 201610339183 A CN201610339183 A CN 201610339183A CN 106025063 B CN106025063 B CN 106025063B
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Abstract
The embodiment of the present invention discloses a kind of magnetic tunnel-junction MTJ and magnetic memory, the MTJ successively includes the first ferromagnetic layer, barrier layer, the second ferromagnetic layer, buffer layer, third ferromagnetic layer and heavy metal layer from top to bottom, wherein: the first ferromagnetic layer, the second ferromagnetic layer and third ferromagnetic layer include mixed-metal materials, barrier layer includes metal oxide materials, and buffer layer includes nonferromagnetic material；The direction of magnetization of first ferromagnetic layer is fixed-direction, and the second ferromagnetic layer and third ferromagnetic layer form ferromagnetic coupling or antiferromagnetic coupling.Implement the embodiment of the present invention, the reversal rate of the direction of magnetization of the third ferromagnetic layer in magnetic tunnel-junction can be improved, the reliability of MTJ is improved, and write current can be reduced, to reduce power consumption.
Description
Technical field
The present invention relates to field of communication technology more particularly to a kind of magnetic tunnel-junctions and magnetic memory.
Background technique
Magnetic memory is the memory that data information storage is carried out by magneto-resistor property, since magnetic memory has surely
It the advantages that fixed non-volatile, unlimited reading times, is widely studied at present.The core memory portion of magnetic memory is magnetic
Tunnel knot (English: Magnetic Tunnel Junction, abbreviation MTJ), as shown in Figure 1, MTJ includes the first ferromagnetic layer and the
The direction of magnetization of two ferromagnetic layers, the first ferromagnetic layer immobilizes, and is reference layer, the direction of magnetization of the second ferromagnetic layer can be the same as reference
Layer is parallel or antiparallel, is accumulation layer.When accumulation layer is parallel with the direction of magnetization of reference layer, low resistance state is presented in MTJ；When depositing
When the direction of magnetization of reservoir and reference layer is antiparallel, high-impedance state is presented in MTJ, in information storage, when low resistance state is presented in MTJ,
It characterizes binary data " 0 ", when high-impedance state is presented in MTJ, characterizes binary data " 1 ".Magnetic memory passes through spin-transfer torque
(English: Spin-Transfer Torque, abbreviation STT) changes the direction of magnetization of accumulation layer, when electric current passes through MTJ, STT with
The direction of magnetization of accumulation layer is conllinear, needs to disturb realization overturning, causes the direction of magnetization reversal rate of accumulation layer slower.
Summary of the invention
The embodiment of the invention discloses a kind of magnetic tunnel-junction and magnetic memory, the accumulation layer in magnetic tunnel-junction can be improved
The direction of magnetization reversal rate, the reliability of MTJ is improved, and write current can be reduced, to reduce power consumption.
The embodiment of the present invention successively includes first ferromagnetic in a first aspect, provide a kind of magnetic tunnel-junction MTJ from top to bottom
Layer, barrier layer, the second ferromagnetic layer, buffer layer, third ferromagnetic layer and heavy metal layer, in which:
First ferromagnetic layer, second ferromagnetic layer and the third ferromagnetic layer include mixed-metal materials, described
Barrier layer includes metal oxide materials, and the buffer layer includes nonferromagnetic material；
The direction of magnetization of first ferromagnetic layer is fixed-direction, and second ferromagnetic layer is formed with the third ferromagnetic layer
Ferromagnetic coupling or antiferromagnetic coupling.
Wherein, using three layers of ferromagnetic layer, the volume of ferromagnetic layer is increased, the thermal stability of MTJ is improved, realized using SOT
The overturning of the direction of magnetization of third ferromagnetic layer, since SOT is not conllinear with the direction of magnetization of third ferromagnetic layer, reversal rate is fast, In
When writing data, write current is not necessarily to the possibility of barrier layer aging or breakdown be reduced, to improve the reliable of MTJ by MTJ
Property, simultaneously because write current is not necessarily to write current can be reduced, to reduce power consumption by MTJ.
Wherein, the MTJ includes reading end, write-in end and common end, the reading end to be located on first ferromagnetic layer,
Said write end is located at one end of the heavy metal layer, and the common end is located at the other end of the heavy metal layer；
When a high voltage in the common end and said write end, another adds low-voltage, and the reading end is disconnected
When opening connection, data are written into the MTJ；
When a high voltage in the common end and the reading end, another adds low-voltage, and said write end is disconnected
When opening connection, data are read from the MTJ.
It is described in conjunction with present invention implementation in a first aspect, in the first implementation of first aspect of the embodiment of the present invention
The interface perpendicular magnetic anisotropic PMA of second ferromagnetic layer is greater than the interface PMA of the third ferromagnetic layer.
Wherein, since the coercive field of the second ferromagnetic layer is larger, the data of the second ferromagnetic layer storage are more stable, and number can be improved
According to the stability of storage.
The first implementation for implementing first aspect or first aspect of the embodiment of the present invention in conjunction with the present invention, in the present invention
In second of implementation of embodiment second aspect, the mixed-metal materials include ferro-cobalt, ferro-cobalt boron, cobalt platinum, ferronickel, cobalt
One of palladium or multiple combinations.
In conjunction with second of implementation of first aspect of this embodiment of the present invention, the of second aspect of the embodiment of the present invention
In three kinds of implementations, the MTJ further includes non-ferromagnetic layers, and the non-ferromagnetic layers are located at the heavy metal layer and the third iron
Between magnetosphere, the non-ferromagnetic layers be the metal oxide materials, the non-ferromagnetic layers with a thickness of 0.1~1nm.
Wherein, one layer of non-ferromagnetic layers are added between heavy metal layer and third ferromagnetic layer, are equivalent to the effect of barrier layer, it can
So that third ferromagnetic layer generates lattice structure, to enhance the PMA of third ferromagnetic layer, write current is reduced.
The first implementation for implementing first aspect or first aspect of the embodiment of the present invention in conjunction with the present invention, in the present invention
In 4th kind of implementation of embodiment second aspect, the mixed-metal materials include heusler alloy.
Wherein, crystalline substance can produce without the non-ferromagnetic layers of heavy metal layer and the ferromagnetic interlayer of third using Heusler alloy
Lattice structure, it is possible to reduce barrier layer aging or breakdown, raising device reliability, raising reading speed, reduction tunnel penetration electric current,
Improve thermal stability and integrated level.
In conjunction with the 4th kind of implementation of first aspect of this embodiment of the present invention, the of second aspect of the embodiment of the present invention
In five kinds of implementations, the MTJ further includes non-ferromagnetic layers, and the non-ferromagnetic layers are located at the heavy metal layer and the third iron
Between magnetosphere, the non-ferromagnetic layers are first metal material, first metal material include copper, gold, ruthenium, tantalum, in hafnium
It is any, the non-ferromagnetic layers with a thickness of 0.1~2nm.
Wherein, it is added after non-ferromagnetic layers in MTJ, PMA can be enhanced, reduce write current.
In conjunction with the present invention implement first aspect or first aspect of the embodiment of the present invention the first to any in the 5th kind
Implementation, in the 6th kind of implementation of second aspect of the embodiment of the present invention, the metal oxide materials include oxidation
Magnesium or aluminium oxide.
Wherein, TMR can be improved for generating tunneling effect using metal oxide in barrier layer.Non-ferromagnetic layers are using gold
Belong to oxide, third ferromagnetic layer can be made to generate lattice structure, to enhance the PMA of third ferromagnetic layer, reduces write current.
In conjunction with the present invention implement first aspect or first aspect of the embodiment of the present invention the first to any in the 6th kind
Implementation, in the 7th kind of implementation of second aspect of the embodiment of the present invention, first ferromagnetic layer further includes the second gold medal
Belong to material, second metal material includes any one of tantalum, ruthenium, tungsten.
Wherein, the second metal material is added in the first ferromagnetic layer, the steady of the direction of magnetization of the first ferromagnetic layer can be improved
It is qualitative.
In conjunction with the present invention implement first aspect or first aspect of the embodiment of the present invention the first to any in the 7th kind
Implementation, in the 8th kind of implementation of second aspect of the embodiment of the present invention, the buffer layer with a thickness of 0.1~1nm,
The nonferromagnetic material includes any one of tantalum, ruthenium, tungsten, vanadium, copper, niobium, iridium, molybdenum, chromium.
Wherein, when the material of buffer layer is tantalum, ruthenium, tungsten, vanadium, copper, niobium, iridium, molybdenum, any in chromium, can pass through
The thickness and material of buffer layer are adjusted, the second ferromagnetic layer of control and third ferromagnetic layer form ferromagnetic coupling or antiferromagnetic coupling, real
The reversal rate of the direction of magnetization of existing second ferromagnetic layer (accumulation layer) improves writing speed.
In conjunction with the present invention implement first aspect or first aspect of the embodiment of the present invention the first to any in the 8th kind
Implementation, in the 9th kind of implementation of second aspect of the embodiment of the present invention, first ferromagnetic layer with a thickness of 1~
20nm。
Wherein, the first ferromagnetic layer with a thickness of 1~20nm, the direction of magnetization of the first ferromagnetic layer can be made to fix, can be with
Improve data storage stability.
In conjunction with the present invention implement first aspect or first aspect of the embodiment of the present invention the first to any in the 9th kind
Implementation, in the tenth kind of implementation of second aspect of the embodiment of the present invention, the barrier layer with a thickness of 0.1~2nm.
Wherein, barrier layer with a thickness of 0.1~2nm, TMR value can be improved, improve reading reliability.
In conjunction with the present invention implement first aspect or first aspect of the embodiment of the present invention the first to any in the tenth kind
Implementation, in a kind of the tenth implementation of second aspect of the embodiment of the present invention, second ferromagnetic layer with a thickness of 0.2
~3nm, the third ferromagnetic layer with a thickness of 0.2~3nm.
Wherein, the second ferromagnetic layer 303 with a thickness of 0.2~3nm, third ferromagnetic layer 305 with a thickness of 0.2~3nm, can be with
So that the direction of magnetization of third ferromagnetic layer is easier to overturn, realizes low-power consumption write-in, ferromagnetic coupling or antiferromagnetic coupling can be passed through
The second ferromagnetic layer of overturning is closed, the storing data that the second ferromagnetic layer is more stable is utilized.
It is any into the tenth one kind in conjunction with the first of present invention implementation first aspect or first aspect of the embodiment of the present invention
Kind of implementation, in the 12nd kind of implementation of second aspect of the embodiment of the present invention, the heavy metal layer material include tantalum,
One of ruthenium, aluminium, platinum, tungsten or copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
Wherein, heavy metal layer has larger Hall angle, can produce bigger spin(-)orbit by the electric current of heavy metal layer
Square SOT helps to realize low-power consumption overturning.
In conjunction with the present invention implement first aspect or first aspect of the embodiment of the present invention the first to any in the 12nd kind
Kind implementation, in the 13rd kind of implementation of second aspect of the embodiment of the present invention, the shape of the MTJ is rectangle, circle
One of shape or ellipse.
Second aspect of the embodiment of the present invention provides a kind of magnetic memory, implements any of first aspect including the present invention
MTJ and switching tube corresponding with the MTJ in kind implementation, in which:
The MTJ includes reading end, write-in end and common end, first iron for reading end and being located at the MTJ
On magnetosphere, said write end is located at one end of the heavy metal layer of the MTJ, and the common end is located at the described of the MTJ
The common end of the other end of heavy metal layer, the MTJ connects bit line BL by switching tube, and the reading end of the MTJ, which connects, reads
The write-in end of line RL, the MTJ connect source line SL；
When switching tube conducting, if a high voltage in the BL and SL, another adds low-voltage, toward institute
It states and data is written in MTJ；
When switching tube conducting, if a high voltage in the BL and RL, another adds low-voltage, from institute
It states and reads data in MTJ.
Wherein, using SOT, the reversal rate of the direction of magnetization of ferromagnetic layer in MTJ can be improved, improve read or write speed, read
Independent in path is write, write current is not necessarily to reduce write-in power consumption, the barrier layer reduced in MTJ is old by the barrier layer in MTJ
The possibility changed or punctured, improves the reliability of magnetic memory.
In the embodiment of the present invention, magnetic tunnel-junction MTJ includes the first ferromagnetic layer, barrier layer, the second ferromagnetic layer, buffer layer, the
Ferromagnetic layer and heavy metal layer, in which: the first ferromagnetic layer, the second ferromagnetic layer and third ferromagnetic layer are mixed-metal materials, gesture
Barrier layer is metal oxide materials, and buffer layer is nonferromagnetic material；The direction of magnetization of first ferromagnetic layer is fixed-direction, the second iron
Magnetosphere and third ferromagnetic layer form ferromagnetic coupling or antiferromagnetic coupling, the interface perpendicular magnetic anisotropic PMA of the second ferromagnetic layer are big
In the interface PMA of third ferromagnetic layer.When Injection Current in heavy metal layer, in heavy metal layer the different electronics of spin direction to
The vertical direction of electric current is mobile, respectively the interface accumulation between heavy metal layer bottom and heavy metal layer and third ferromagnetic layer, shape
At erect spin stream, to generate spin orbital moment SOT between heavy metal layer and third ferromagnetic layer；Due to third ferromagnetic layer with
The direction of the spin(-)orbit square SOT generated between heavy metal layer is not conllinear with the direction of magnetization of third ferromagnetic layer, third ferromagnetic layer
The direction of magnetization overturning is rapidly completed under the action of spin(-)orbit square SOT, since the second ferromagnetic layer and third ferromagnetic layer are formed
Ferromagnetic coupling or antiferromagnetic coupling, and then the direction of magnetization of the second ferromagnetic layer (accumulation layer, also referred to as free layer) is caused quickly to overturn,
The reversal rate of the direction of magnetization of the accumulation layer in MTJ can be improved.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology to be briefly described, it should be apparent that, the accompanying drawings in the following description is only the present invention
Some embodiments for those of ordinary skill in the art without creative efforts, can also basis
These attached drawings obtain other attached drawings.
Fig. 1 is a kind of structural schematic diagram of tradition MTJ disclosed in the prior art；
Fig. 2 is a kind of structural schematic diagram of double potential barrier layer MTJ disclosed in the prior art；
Fig. 3 is the structural schematic diagram of MTJ disclosed by the embodiments of the present invention a kind of；
Fig. 4 is the structural schematic diagram of another kind MTJ disclosed by the embodiments of the present invention；
Fig. 5 is the structural schematic diagram of another kind MTJ disclosed by the embodiments of the present invention；
Fig. 6 is the structural schematic diagram of another kind MTJ disclosed by the embodiments of the present invention；
Fig. 7 is a kind of structural schematic diagram of magnetic memory disclosed by the embodiments of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that the described embodiment is only a part of the embodiment of the present invention, instead of all the embodiments.Based on this
Embodiment in invention, every other reality obtained by those of ordinary skill in the art without making creative efforts
Example is applied, shall fall within the protection scope of the present invention.
Referring to Fig. 1, Fig. 1 is a kind of structural schematic diagram of tradition MTJ disclosed in the prior art.MTJ packet shown in FIG. 1
Include the first ferromagnetic layer 101, barrier layer 102 and the second ferromagnetic layer 103, wherein the direction of magnetization of the first ferromagnetic layer 101 is fixed not
Become, be reference layer, the direction of magnetization of the second ferromagnetic layer 103 can be parallel or antiparallel with reference layer, is accumulation layer, also cries certainly
By layer.When the direction of magnetization of accumulation layer 103 and reference layer 101 is antiparallel, as shown in Fig. 1 (a), high-impedance state R is presented in MTJap；When
When accumulation layer 103 is parallel with the direction of magnetization of reference layer 101, as shown in Fig. 1 (b), low resistance state R is presented in MTJp, stored in information
When, it when low resistance state is presented in MTJ, characterizes binary data " 0 ", when high-impedance state is presented in MTJ, characterizes binary data " 1 ",
Diversity factor between two kinds of resistance states of height of MTJ is come with magnetic tunnel resistance (Tunnel Magnetoresistance, TMR)
Description, TMR=(Rap-Rp)/Rp, TMR is bigger, and reading reliability is higher.Magnetic memory passes through spin-transfer torque (English: Spin-
Transfer Torque, abbreviation STT) direction of magnetization that changes accumulation layer, when electric current passes through MTJ, STT and accumulation layer 103
The direction of magnetization is conllinear, needs to disturb realization overturning, causes the direction of magnetization reversal rate of accumulation layer 103 slower.
When the direction of magnetization of accumulation layer 103 and reference layer 101 is antiparallel, shown in Fig. 1 (a), the magnetization side of reference layer 101
To upward, the initial magnetization direction of accumulation layer 103 is downward, if electric current is from top to bottom, electronics from bottom to top, in reference layer 101 from
Revolve the downward electronics (electronics a1 as shown in figure 1) in direction due to different from the direction of magnetization of reference layer 101, in reference layer 101 certainly
Revolve the downward electronics in direction can not by reference to layer 101 (electronics a1 as shown in figure 1, returned by track s1 and be emitted back towards reference layer 101),
And the upward electronics of spin direction (electronics a2, a3 as shown in figure 1) is due to the direction of magnetization with reference layer 101 in reference layer 101
Identical, the upward electronics of spin direction passes through barrier layer 102 and acts on (the electronics as shown in figure 1 of accumulation layer 103 in reference layer 101
A2, a3 pass through barrier layer 102 by track s2, into accumulation layer 103), so as to pass through the electron spin of coming from reference layer 101
Spin-transfer torque (English: Spin-Transfer Torque, abbreviation STT) is generated with the electronic magnetic moment in accumulation layer 103, is made
Reference layer 101 passes through the electronics in the electronics come and accumulation layer 103 and generates precession, gradually overturns the direction of magnetization of accumulation layer 103
(from downwards, gradually overturning is upward to the direction of magnetization of overturning accumulation layer 103), it is sufficient when passing through next electron amount from reference layer 101
When more than enough, electronic magnetic moment direction " assimilation " in accumulation layer 103 (can such as be schemed shown in (a), the direction of magnetization of accumulation layer 103
It is upward by gradually becoming downwards) so that electronic magnetic moment direction and electronic magnetic moment direction in reference layer 101 in accumulation layer 103
It is identical, realize accumulation layer 103 and the consistent state of 101 direction of magnetization of reference layer.Due to the electronics in STT and accumulation layer 103
Initial magnetic moment direction is parallel, needs to disturb the direction of magnetization overturning for realizing accumulation layer 103, precession time is longer, so as to cause reading
Writing rate is slow.
When accumulation layer 103 is parallel with the direction of magnetization of reference layer 101, shown in Fig. 1 (b), the direction of magnetization of reference layer 101
Upwards, the initial magnetization direction of accumulation layer 103 is upward, electric current from bottom to up, electronics from the top down, spin side in accumulation layer 103
Barrier layer 102 is passed through due to identical as the direction of magnetization of reference layer 101 to upward electronics (electronics b2, b3 as shown in figure 1)
And reach reference layer 101, in accumulation layer 103 the downward electronics of spin direction (electronics b1 as shown in figure 1) due to reference layer 101
The direction of magnetization it is different, reference layer 101 can not be reached and reflected, in the spin and accumulation layer 103 of reflected electronics
Electronic magnetic moment generate STT, so that the electronics in reflected electronics and accumulation layer 103 is generated precession, gradually overturning storage
The direction of magnetization (direction of magnetization of overturning accumulation layer 103 is from gradually overturning is downward upwards) of layer 103, when reflected electronics
When quantity is enough, electronic magnetic moment direction " assimilation " in accumulation layer 103 (can such as be schemed shown in (b), the magnetic of accumulation layer 103
Change direction by gradually becoming downward upwards) so that in accumulation layer 103 in electronic magnetic moment direction and reference layer 101 electronics magnetic
Square direction is different, realizes the state opposite with 101 direction of magnetization of reference layer of accumulation layer 103.Similarly, due to STT and accumulation layer 103
In electronics initial magnetic moment direction it is parallel, need to disturb realize accumulation layer 103 the direction of magnetization overturning, precession time is longer,
It is slow so as to cause read or write speed.
Referring to Fig. 2, Fig. 2 is a kind of structural schematic diagram of double potential barrier layer MTJ disclosed in the prior art.As shown in Fig. 2,
It is successively ferromagnetic including the first ferromagnetic layer 201, the first barrier layer 202, the second ferromagnetic layer 203, buffer layer 204, third from bottom to up
Layer 205 and the second barrier layer 206.
Compared with tradition MTJ shown in FIG. 1, the more one layer of buffer layer of double potential barrier layer MTJ in Fig. 2, one layer of ferromagnetic layer and
One layer of barrier layer is increased the volume of ferromagnetic layer, Interface Anisotropy can be improved using double potential barrier layer MTJ shown in Fig. 2
Can, compared with traditional MTJ, thermal stability is improved.However, the direction of magnetization inversion principle of the accumulation layer due to double potential barrier layer MTJ
It is identical as traditional MTJ, by STT realize accumulation layer the direction of magnetization overturn, precession time is still very long, read or write speed still compared with
Slowly.
It should be noted that Fig. 1 and MTJ shown in Fig. 2 requires electric current and passes through entirely during reading and writing
MTJ, for example, electric current needs to flow through the second ferromagnetic layer 103, barrier layer 102 and the first ferromagnetic layer 101 in Fig. 1；In Fig. 2,
Electric current needs to flow through the second barrier layer 206, third ferromagnetic layer 205, buffer layer 204, the second ferromagnetic layer 203, the first barrier layer 202
With the first ferromagnetic layer 201.
The embodiment of the invention discloses a kind of magnetic tunnel-junction and magnetic memory, the accumulation layer in magnetic tunnel-junction can be improved
The direction of magnetization reversal rate.It is described in detail separately below.
Referring to Fig. 3, Fig. 3 is the structural schematic diagram of MTJ disclosed by the embodiments of the present invention a kind of.As shown in figure 3, from up to
Under successively include the first ferromagnetic layer 301, barrier layer 302, the second ferromagnetic layer 303, buffer layer 304, third ferromagnetic layer 305 and a huge sum of money
Belong to layer 306, in which:
First ferromagnetic layer 301, the second ferromagnetic layer 303 and third ferromagnetic layer 305 include mixed-metal materials, barrier layer
302 include metal oxide materials, and buffer layer 304 includes nonferromagnetic material；
The direction of magnetization of first ferromagnetic layer 301 is fixed-direction, and the second ferromagnetic layer 303 forms iron with third ferromagnetic layer 305
Magnetic coupling or antiferromagnetic coupling.
In the embodiment of the present invention, the first ferromagnetic layer 301, the second ferromagnetic layer 303 and third ferromagnetic layer 305 include mixing gold
Belong to material, mixed-metal materials are ferromagnetic material；Barrier layer 302 is metal oxide materials, is nonferromagnetic material；Buffer layer
304 be nonferromagnetic material, can be non-ferromagnetic metal material；First ferromagnetic layer 301 is reference layer, and the direction of magnetization remains unchanged,
So the direction of magnetization of the first ferromagnetic layer 301 is fixed-direction, such as it is fixed up or fixes downwards；It can be buffered by adjusting
The thickness and material of layer 304, the second ferromagnetic layer of control 303 form ferromagnetic coupling or antiferromagnetic coupling with third ferromagnetic layer 305.
When Injection Current in heavy metal layer 306, the different electronics of spin direction is to the vertical of electric current in heavy metal layer 306
Direction is mobile to generate spin current, and spin current will lead to the spin accumulation of heavy metal layer 306, due to barrier layer 302, the second ferromagnetic layer
303, buffer layer 304, third ferromagnetic layer 305 and heavy metal layer 306 can make in the structure inversion asymmetry that vertical direction is formed
It obtains spin accumulation and generates the spin(-)orbit square (English: Spin-Orbit Torque, abbreviation for acting on third ferromagnetic layer 305
SOT), and the direction of magnetization of SOT and third ferromagnetic layer 305 is not conllinear, and SOT directly acts on third ferromagnetic layer 305, with Fig. 1 or
MTJ in Fig. 2 is compared, it is possible to reduce the direction of magnetization reversal rate of perturbation process, third ferromagnetic layer 305 is fast.Ferromagnetic coupling are as follows:
Need externally-applied magnetic field that SOT certainty is overturn, the second ferromagnetic layer 303 is identical as the direction of magnetization of third ferromagnetic layer 305；Anti- iron
Magnetic coupling are as follows: by the inherent effective magnetic field of exchange biased generation, SOT determination can be realized without applying externally-applied magnetic field
Property overturning, the second ferromagnetic layer 303 is opposite with the direction of magnetization of third ferromagnetic layer 305.Preferably, the second ferromagnetic layer 303 and third
Ferromagnetic layer 305 forms antiferromagnetic coupling, and compared with ferromagnetic coupling, for antiferromagnetic coupling without applying externally-applied magnetic field, saving space can
To improve integrated level.
MTJ can use the method for traditional ion beam epitaxy, atomic layer deposition or magnetron sputtering by each layer object therein
Matter on substrate, is then prepared by nano-device processing technologies such as photoetching, etchings according to sequence plating from top to bottom.
As shown in Fig. 3 (a), the first ferromagnetic layer 301 is reference layer, and the direction of magnetization of the first ferromagnetic layer 301 immobilizes, and is
" vertically upward ", the second ferromagnetic layer 303 is accumulation layer, and the initial magnetization direction of the second ferromagnetic layer 303 is " vertically downward ", at this time
The data of MTJ storage are " 1 ", and third ferromagnetic layer 305 is turning layer, due to the second ferromagnetic layer 303 and the formation of third ferromagnetic layer 305
Antiferromagnetic coupling, the initial magnetization direction of third ferromagnetic layer 305 are " vertically upward ".When data " 0 " is written into MTJ in needs
When, injection write-in positive current in heavy metal layer 306, the different electronics (spin in such as Fig. 3 of spin direction in heavy metal layer 306
Upward electronics a1, a2, electronics a3, the a4 for spinning downward) to the mobile generation spin current of the vertical direction of electric current, in heavy metal layer
The spin that 306 spin currents added up with 305 interface of third ferromagnetic layer will lead to heavy metal layer 306 accumulates (from rotation direction in such as Fig. 3
On electronics a1, a2 spin accumulation), spin accumulation, which generates, acts on the SOT of third ferromagnetic layer 305, the direction of the SOT with
The direction of magnetization of third ferromagnetic layer 305 keeps vertical, so that the direction of magnetization of third ferromagnetic layer 305 rotates counterclockwise, Zhi Dao
The direction of magnetization of ferromagnetic layer 305 becomes parallel with current direction " vertically upward " from initial, stops at this time to heavy metal layer
Injection write-in positive current in 306, it is inclined by exchanging since the second ferromagnetic layer 303 forms antiferromagnetic coupling with third ferromagnetic layer 305
The inherent effective magnetic field of generation is set, so that the direction of magnetization of third ferromagnetic layer 305 is deterministically become " hanging down from parallel with current direction
It is straight downward ", the overturning of the direction of magnetization of third ferromagnetic layer 305 is realized, and the direction of magnetization of the second ferromagnetic layer 303 is become
" vertically upward ", at this point, data are written in MTJ becomes " 0 " from " 1 ".The direction of SOT and the direction of magnetization of third ferromagnetic layer 305
Keep vertical, i.e., the direction of SOT is not conllinear with the direction of magnetization of third ferromagnetic layer 305, can compared with the MTJ in Fig. 1 or Fig. 2
To reduce perturbation process, the direction of magnetization reversal rate of third ferromagnetic layer 305 is fast.
As shown in Fig. 3 (b), the first ferromagnetic layer 301 is reference layer, and the direction of magnetization of the first ferromagnetic layer 301 immobilizes, and is
" vertically upward ", the second ferromagnetic layer 303 is accumulation layer, and the initial magnetization direction of the second ferromagnetic layer 303 is " vertically upward ", at this time
The data of MTJ storage are " 0 ", and third ferromagnetic layer 305 is turning layer, due to the second ferromagnetic layer 303 and the formation of third ferromagnetic layer 305
Antiferromagnetic coupling, the initial magnetization direction of third ferromagnetic layer 305 are " vertically downward ".When data " 1 " is written into MTJ in needs
When, injection write-in negative current in heavy metal layer 306, the different electronics (spin in such as Fig. 3 of spin direction in heavy metal layer 306
Downward electronics b1, b2, electronics b3, the b4 spun up) to the mobile generation spin current of the vertical direction of electric current, in heavy metal layer
The spin that 306 spin currents added up with 305 interface of third ferromagnetic layer will lead to heavy metal layer 306 accumulates (from rotation direction in such as Fig. 3
Under electronics b1, b2 spin accumulation), spin accumulation, which generates, acts on the SOT of third ferromagnetic layer 305, the direction of the SOT with
The direction of magnetization of third ferromagnetic layer 305 keeps vertical, so that the direction of magnetization of third ferromagnetic layer 305 rotates clockwise, Zhi Dao
The direction of magnetization of ferromagnetic layer 305 becomes parallel with current direction " vertically downward " from initial, stops at this time to heavy metal layer
Injection write-in negative current in 306, it is inclined by exchanging since the second ferromagnetic layer 303 forms antiferromagnetic coupling with third ferromagnetic layer 305
The inherent effective magnetic field of generation is set, so that the direction of magnetization of third ferromagnetic layer 305 is deterministically become " hanging down from parallel with current direction
It is straight upward ", the overturning of the direction of magnetization of third ferromagnetic layer 305 is realized, and the direction of magnetization of the second ferromagnetic layer 303 is become
" vertically downward ", at this point, data are written in MTJ becomes " 1 " from " 0 ".The direction of SOT and the direction of magnetization of third ferromagnetic layer 305
Keep vertical, i.e., the direction of SOT is not conllinear with the direction of magnetization of third ferromagnetic layer 305, can compared with the MTJ in Fig. 1 or Fig. 2
To reduce perturbation process, the direction of magnetization reversal rate of third ferromagnetic layer 305 is fast.
As shown in Fig. 3 (c), when needing to read data from MTJ, apply high voltage on the first ferromagnetic layer 301, a huge sum of money
Belong to and apply low-voltage on the left of layer 306, reads electric current from the first ferromagnetic layer 301 and flow through MTJ from top to bottom to heavy metal layer 306, by
In the first ferromagnetic layer 301 and the second ferromagnetic layer in parallel different with the reading electric current of antiparallel state, read by read-out amplifier
The electric current taken is compared with reference electric current, judges that the data information being stored therein, reference electric current can bases
It reads the first reading electric current of data " 0 " and the second of reading data " 1 " reads electric current and determine, for example, can be by reference
Electric current is set as the first reading electric current and second and reads the average value of electric current, when the electric current that read-out amplifier is read is joined greater than benchmark
When examining electric current, determine that the data read from MTJ are " 0 ", when the electric current that read-out amplifier is read is less than reference electric current,
Determine that the data read from MTJ are " 1 ".
In one embodiment, the interface perpendicular magnetic anisotropic PMA of the second ferromagnetic layer 303 is greater than third ferromagnetic layer 305
Interface PMA.
Since PMA is bigger, coercive field is bigger, and the interface PMA of the second ferromagnetic layer 303 is greater than the interface of third ferromagnetic layer 305
PMA, the coercive field of the second ferromagnetic layer 303 are greater than the coercive field of third ferromagnetic layer 305, third ferromagnetic layer 305 more easy to accomplish
Low-power consumption write-in is realized in the overturning of the direction of magnetization, since the coercive field of the second ferromagnetic layer 303 is bigger, the storage of the second ferromagnetic layer 303
Data it is more stable, can be improved data storage stability.
In one embodiment, mixed-metal materials include one of ferro-cobalt, ferro-cobalt boron, cobalt platinum, ferronickel, cobalt palladium or more
Kind combination.
In the embodiment of the present invention, mixed-metal materials may include ferro-cobalt (CoFe), ferro-cobalt boron (CoFeB), cobalt platinum
(CoPt), the ferromagnetic materials such as ferronickel (NiFe), cobalt palladium (CoPd) can be one in ferro-cobalt, ferro-cobalt boron, cobalt platinum, ferronickel, cobalt palladium
Kind or multiple combinations, various elements composition can be different in mixed-metal materials, for example, in CoFeB every kind of element accounting
It can be different.
Optionally, as shown in figure 4, Fig. 4 is the structural schematic diagram of another kind MTJ disclosed by the embodiments of the present invention, in Fig. 4
MTJ further includes non-ferromagnetic layers 307, and between heavy metal layer 306 and third ferromagnetic layer 305, non-ferromagnetic layers 307 are non-ferromagnetic layers
Metal oxide materials, non-ferromagnetic layers 307 with a thickness of 0.1~1nm.
When the first ferromagnetic layer 301, the second ferromagnetic layer 303 and third ferromagnetic layer 305 are ferro-cobalt, ferro-cobalt boron, cobalt platinum, nickel
When the mixed-metal materials of one of iron, cobalt palladium or multiple combinations, MTJ further includes non-ferromagnetic layers 307, and non-ferromagnetic layers 307
For metal oxide materials, metal oxide materials may include the nonferromagnetic materials such as magnesia, aluminium oxide, non-ferromagnetic layers 307
With a thickness of 0.1~1nm.One layer of non-ferromagnetic layers 307 are added between heavy metal layer 306 and third ferromagnetic layer 305, are equivalent to gesture
The effect of barrier layer 304 can make third ferromagnetic layer 305 generate lattice structure, to enhance the PMA of third ferromagnetic layer 305, reduce
Write current.
In one embodiment, mixed-metal materials include heusler alloy.
In the embodiment of the present invention, mixed-metal materials may include heusler alloy, also referred to as Heusler alloy,
Heusler alloy is the general name of a kind of alloy, usually XYZ and X2YZ, wherein X, Y, Z are given zone in the periodic table of elements
The element in domain, for example, X can for iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), zinc (Zn), ruthenium (Ru), rhodium (Rh), palladium (Pd),
Any one of silver-colored (Ag), cadmium (Cd), iridium (Ir), platinum (Pt), golden (Au)；Y can be titanium (Ti), vanadium (V), chromium (Cr), manganese
(Mn), yttrium (Y), zirconium (Zr), niobium (Nb), hafnium (Hf), tantalum (Ta), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium
(Tm), any one of ytterbium (Yb), lutetium (Lu)；Z can be aluminium (Al), silicon (Si), gallium (Ga), germanium (Ge), arsenic (As), indium
(In), any one of tin (Sn), antimony (Sb), thallium (Tl), lead (Pb), bismuth (Bi).Common Heusler alloy may include:
Cu2MnAl、Cu2MnIn、Cu2MnSn、Ni2MnAl、Ni2MnIn、Ni2MnSn、Ni2MnSb、Ni2MnGa、Co2MnAl、Co2MnSi、
Co2MnGa、Co2MnGe、Pd2MnAl、Pd2MnIn、Pd2MnSn、Pd2MnSb、CoFeSi、CoFeAl、Mn2VGa、Co2FeGe etc..
Heusler alloy has the advantages that (1), high spinning polarizability, and the magnetic tunnel resistance (Tunnel of MTJ can be improved
Magnetoresistance, TMR), for example, NiMnSb can obtain 100% spin polarizability；(2), high PMA；(3), low
Magneto damped coefficient, can reduce the write current of MTJ, and magneto damped coefficient α can be down to 0.001；(4), high-curie temperature uses
Heusler alloy can keep ferromagnetism within the scope of larger temperature, facilitate MTJ and work within the scope of bigger temperature；
(5), lattice mismatch is small, smaller with the lattice mismatch of barrier layer 402, for magnesia (MgO), MgO and Co2The crystalline substance of FeAl
Lattice mismatch very little, it is easily fabricated.Using Heusler alloy, without non-ferromagnetic between heavy metal layer 306 and third ferromagnetic layer 305
Layer 307, that is, can produce lattice structure, it is possible to reduce 302 aging of barrier layer or breakdown improve device reliability, reduce RA value (RA
Value is the resistance value of MTJ and the product of cross-sectional area, and reducing RA value can be improved reading speed), improve reading speed, reduce potential barrier
Tunnelling current improves thermal stability and integrated level.
Optionally, as shown in figure 5, Fig. 5 is the structural schematic diagram of another kind MTJ disclosed by the embodiments of the present invention, in Fig. 5
MTJ further includes non-ferromagnetic layers 307, and non-ferromagnetic layers 307 are between heavy metal layer 306 and third ferromagnetic layer 305, non-ferromagnetic layers
307 be the first metal material, and the first metal material includes any one of copper, gold, ruthenium, tantalum, hafnium, the thickness of non-ferromagnetic layers 307
For 0.1~2nm.
When the first ferromagnetic layer 301, the second ferromagnetic layer 303 and third ferromagnetic layer 305 are heusler alloy, MTJ may be used also
To include non-ferromagnetic layers 307, and non-ferromagnetic layers 307 are the first metal material, and the first metal material includes copper, gold, ruthenium, tantalum, hafnium
Any one of, it is added after non-ferromagnetic layers 307, PMA can be enhanced, reduce write current.
In one embodiment, metal oxide materials include magnesia or aluminium oxide.
TMR can be improved for generating tunneling effect using metal oxide in barrier layer 302.Non-ferromagnetic layers 307 use
Metal oxide can make third ferromagnetic layer 305 generate lattice structure, to enhance the PMA of third ferromagnetic layer 305, reduction is write
Enter electric current.Preferably, barrier layer 302 can use magnesia, when barrier layer 302 uses magnesia, the first ferromagnetic layer 301 and the
When two ferromagnetic layers 303 are using heusler alloy, lattice mismatch is small, and lattice defect is few, is readily synthesized.
In one embodiment, the first ferromagnetic layer 301 further includes the second metal material, the second metal material include tantalum, ruthenium,
Any one of tungsten.
First ferromagnetic layer 301 can also include the second metal material, first is ferromagnetic other than including mixed-metal materials
Layer 301 may include three layers in itself, for example, as shown in fig. 6, the structure that Fig. 6 is another kind MTJ disclosed by the embodiments of the present invention is shown
It is intended to, it is cobalt platinum (CoPt) that the upper and lower in Fig. 6, which are mixed-metal materials, and middle layer is tantalum, ruthenium, any in tungsten
Kind.Implement MTJ shown in fig. 6, the stability of the direction of magnetization of the first ferromagnetic layer 301 can be improved.
In one embodiment, buffer layer 304 with a thickness of 0.1~1nm, nonferromagnetic material include tantalum, ruthenium, tungsten, vanadium,
Any one of copper, niobium, iridium, molybdenum, chromium.
Buffer layer 304 is using nonferromagnetic material, such as tantalum, ruthenium, tungsten, vanadium, copper, niobium, iridium, molybdenum, chromium etc..Adjusting can be passed through
The thickness and material of buffer layer 304, the second ferromagnetic layer of control 303 form ferromagnetic coupling or antiferromagnetic coupling with third ferromagnetic layer 305
It closes.Such as:；
The antiferromagnetic coupling section of tantalum Ta is 0.5nm-0.9nm, reaches antiferromagnetic coupling maximum in 0.7nm；Ferromagnetic coupling
Section is 0.1nm-0.5nm；
The antiferromagnetic coupling section of ruthenium Ru is 0.1nm-0.6nm, reaches antiferromagnetic coupling maximum in 0.3nm；Ferromagnetic coupling
Section is 0.6nm-1.0nm；
The antiferromagnetic coupling section of tungsten W is 0.25nm-0.85nm, reaches antiferromagnetic coupling maximum in 0.55nm；Ferromagnetic coupling
Closing section is 0.1nm-0.5nm；
The antiferromagnetic coupling section of vanadium V is 0.6nm-1.0nm, reaches antiferromagnetic coupling maximum in 0.9nm；Ferromagnetic coupling area
Between be 0.1nm-0.6nm；
The antiferromagnetic coupling section of copper Cu is 0.5nm-1.0nm, reaches antiferromagnetic coupling maximum in 0.8nm；Ferromagnetic coupling
Section is 0.1nm-0.5nm；
The antiferromagnetic coupling section of niobium Nb is 0.7nm-1.0nm, reaches antiferromagnetic coupling maximum in 0.95nm；Ferromagnetic coupling
Section is 0.1nm-0.7nm；
The antiferromagnetic coupling section of iridium Ir is 0.1nm-0.7nm, reaches antiferromagnetic coupling maximum in 0.4nm；Ferromagnetic coupling
Section is 0.7nm-1.0nm；
The antiferromagnetic coupling section of molybdenum Mo is 0.22nm-0.82nm, reaches antiferromagnetic coupling maximum in 0.52nm；
The antiferromagnetic coupling section of chromium Cr is 0.1nm-1nm, reaches antiferromagnetic coupling maximum in 0.7nm；
Since antiferromagnetic coupling is not necessarily to externally-applied magnetic field, in the embodiment of the present invention, preferred antiferromagnetic coupling.
In one embodiment, the first ferromagnetic layer 301 with a thickness of 1~20nm.It can make the magnetic of the first ferromagnetic layer 301
Change direction to fix, data storage stability can be improved.
In one embodiment, barrier layer 302 with a thickness of 0.1~2nm.Preferably, barrier layer 302 with a thickness of 1nm,
TMR value can be improved in the thickness for increasing barrier layer 302, improves reading reliability.
In one embodiment, the second ferromagnetic layer 303 with a thickness of 0.2~3nm, third ferromagnetic layer 305 with a thickness of 0.2
~3nm.The direction of magnetization of third ferromagnetic layer 305 can be made to be easier to overturn, low-power consumption write-in is realized, ferromagnetic coupling can be passed through
It closes or antiferromagnetic coupling overturns the second ferromagnetic layer 303, utilize the storing data that the second ferromagnetic layer 303 is more stable.
In one embodiment, the material of heavy metal layer 306 includes one of tantalum, ruthenium, aluminium, platinum, tungsten or copper or a variety of
Combination, heavy metal layer 306 with a thickness of 5~200nm.With larger Hall angle, can produce by the electric current of heavy metal layer 306
Bigger spin(-)orbit square SOT helps to realize low-power consumption overturning.
In one embodiment, the shape of MTJ is one of rectangle, round or ellipse.
By MTJ shown in implementing Fig. 3, compared with MTJ shown in FIG. 1, the volume of ferromagnetic layer is increased, boundary can be improved
Face anisotropy energy, compared with MTJ shown in FIG. 1, thermal stability is improved.Compared with Fig. 1 and MTJ shown in Fig. 2, shown in Fig. 3
MTJ using SOT realize third ferromagnetic layer 305 the direction of magnetization overturning, due to the magnetization side of SOT and third ferromagnetic layer 305
To not conllinear, reversal rate is fast, and when writing data, write current is not necessarily to through MTJ, and reduce barrier layer aging or breakdown can
Can, so that the reliability of MTJ is improved, simultaneously because write current is not necessarily to write current can be reduced, to drop by MTJ
Low-power consumption.
Referring to Fig. 7, Fig. 7 is a kind of structural schematic diagram of magnetic memory disclosed by the embodiments of the present invention, as shown in fig. 7,
Magnetic memory includes multiple MTJ shown in Fig. 3 and multiple switch pipe, in which:
Each MTJ includes reading end RP, write-in end WP and public terminal GND, reads the first ferromagnetic layer that end RP is located at MTJ
On 301, write-in end WP is located at one end of the heavy metal layer 306 of MTJ, and public terminal GND is located at the another of the heavy metal layer 306 of MTJ
The public terminal GND at end, MTJ connects bit line BL, the write-in end WP of reading end RP connection the read line RL, MTJ of MTJ by switching tube
Connection source line SL；
When switching tube conducting, if a high voltage in BL and SL, another adds low-voltage, and data are written into MTJ；
When switching tube conducting, if a high voltage in BL and RL, another adds low-voltage, and data are read from MTJ.
In the embodiment of the present invention, magnetic memory may include magnetic random memory (English: Magnetic Random
Access Memory, abbreviation MRAM).The magnetic memory multiple switch pipe T corresponding with above-mentioned multiple MTJ that include multiple MTJ, is opened
Closing pipe T can be metal oxide semiconductor field effect tube (English: Metal-Oxide-Semiconductor Field-
Effect Transistor, MOSFET, abbreviation metal-oxide-semiconductor), such as MTJ0, MTJ1, MTJ2, MTJ3...... in Fig. 7.Each
The public terminal GND of MTJ connects bit line BL by switching tube, for example, the public terminal GND 0 of MTJ0 passes through 0 connection position of switch transistor T
The public terminal GND 1 of line BL0, MTJ1 connect bit line BL1 by switch transistor T 1, and the public terminal GND 2 of MTJ2 is connected by switch transistor T 2
Meet bit line BL2...... etc..The reading end RP connection read line RL of each MTJ, for example, the reading end RP0 connection of MTJ0 is read
Reading end RP2 connection read line RL2...... of reading end RP1 connection read line RL1, MTJ2 of line RL0, MTJ1 etc..Each
The write-in end WP connection source line SL of MTJ, for example, the write-in end WP1 connection source of write-in end WP0 connection source the line SL0, MTJ1 of MTJ0
Write-in end WP2 connection source line SL2...... of line SL1, MTJ2 etc..
When data being written into magnetic memory, for example, data " 0 " if desired is written into MTJ0, then pipe T0 is turned on the switch
If (switch transistor T 0 is metal-oxide-semiconductor, applies high level to WL0, so that switch transistor T 0 is connected), applies high voltage to SL0, BL0 is applied
Add low-voltage, RL0 is disconnected；If desired data " 1 " is written into MTJ0, then turns on the switch pipe T0, apply low-voltage, BL0 to SL0
Apply high voltage, RL0 is disconnected.When data being written into MTJ, electric current does not need to pass through MTJ, it is only necessary to pass through the heavy metal of MTJ
Layer, so write-in lower power consumption, reduces the possibility of the barrier layer aging or breakdown in MTJ, improve the reliability of magnetic memory.
When reading data from magnetic memory, for example, if desired reading the data in MTJ0, then pipe T0 is turned on the switch, give RL0
Apply high voltage, apply low-voltage to BL0, SL0 is disconnected, and is read the electric current in MTJ0 by read-out amplifier, is put by reading
The electric current that big device is read is compared with reference electric current, judges the data information being stored therein, for example, when reading amplification
When the electric current that device is read is greater than reference electric current, determines that the data being stored in MTJ0 are " 0 ", read when read-out amplifier
When electric current is less than reference electric current, determine that the data being stored in MTJ0 are " 1 ".
Implement magnetic memory shown in Fig. 7, using SOT, the overturning speed of the direction of magnetization of ferromagnetic layer in MTJ can be improved
Degree improves read or write speed, and read/write path is independent, and write current is not necessarily to reduce write-in power consumption by the barrier layer in MTJ, drops
The possibility of barrier layer aging or breakdown in low MTJ, improves the reliability of magnetic memory.
A kind of magnetic tunnel-junction disclosed by the embodiments of the present invention and magnetic memory are described in detail above, herein
Apply that a specific example illustrates the principle and implementation of the invention, the explanation of above example is only intended to help
Understand method and its core concept of the invention；At the same time, for those skilled in the art, according to the thought of the present invention,
There will be changes in the specific implementation manner and application range, in conclusion the content of the present specification should not be construed as to this
The limitation of invention.
Claims (134)
1. a kind of magnetic tunnel-junction MTJ, which is characterized in that from top to bottom successively include the first ferromagnetic layer, barrier layer, second ferromagnetic
Layer, buffer layer, third ferromagnetic layer and heavy metal layer, in which:
First ferromagnetic layer, second ferromagnetic layer and the third ferromagnetic layer include mixed-metal materials, the potential barrier
Layer includes metal oxide materials, and the buffer layer includes nonferromagnetic material；The MTJ realizes institute using spin(-)orbit square SOT
State the overturning of the direction of magnetization of third ferromagnetic layer；The mixed-metal materials include heusler alloy；
The direction of magnetization of first ferromagnetic layer is fixed-direction, and second ferromagnetic layer and the third ferromagnetic layer form anti-iron
Magnetic coupling, the buffer layer with a thickness of 0.1~1nm, the nonferromagnetic material include tantalum, ruthenium, tungsten, vanadium, copper, niobium, iridium, molybdenum,
Any one of chromium；
When Injection Current in the heavy metal layer, the different electronics of spin direction is to vertical with electric current in the heavy metal layer
Direction is mobile, and the interface accumulation between the heavy metal layer bottom and the heavy metal layer and third ferromagnetic layer, forms respectively
Erect spin stream, to generate spin orbital moment SOT between the heavy metal layer and the third ferromagnetic layer；Wherein, described
The direction of the spin(-)orbit square SOT generated between third ferromagnetic layer and the heavy metal layer and the magnetization side of the third ferromagnetic layer
To not conllinear.
2. MTJ according to claim 1, which is characterized in that the MTJ includes reading end, write-in end and common end, described
It reads end to be located on first ferromagnetic layer, said write end is located at one end of the heavy metal layer, and the common end is located at institute
State the other end of heavy metal layer；
When a high voltage in the common end and said write end, another adds low-voltage, and the reading end disconnects and connecting
When connecing, data are written into the MTJ；
When a high voltage in the common end and the reading end, another adds low-voltage, and said write end disconnects and connecting
When connecing, data are read from the MTJ.
3. MTJ according to claim 1, which is characterized in that the interface perpendicular magnetic anisotropic PMA of second ferromagnetic layer
Greater than the interface PMA of the third ferromagnetic layer.
4. MTJ according to claim 2, which is characterized in that the interface perpendicular magnetic anisotropic PMA of second ferromagnetic layer
Greater than the interface PMA of the third ferromagnetic layer.
5. MTJ according to claim 1, which is characterized in that the MTJ further includes non-ferromagnetic layers, the non-ferromagnetic layers position
Between the heavy metal layer and the third ferromagnetic layer, the non-ferromagnetic layers are the first metal material, first metal material
Material include any one of copper, gold, ruthenium, tantalum, hafnium, the non-ferromagnetic layers with a thickness of 0.1~2nm.
6. described in any item MTJ according to claim 1~5, which is characterized in that the metal oxide materials include magnesia
Or aluminium oxide.
7. described in any item MTJ according to claim 1~5, which is characterized in that first ferromagnetic layer further includes the second metal
Material, second metal material include any one of tantalum, ruthenium, tungsten.
8. MTJ according to claim 6, which is characterized in that first ferromagnetic layer further includes the second metal material, described
Second metal material includes any one of tantalum, ruthenium, tungsten.
9. described in any item MTJ according to claim 1~5, which is characterized in that first ferromagnetic layer with a thickness of 1~
20nm。
10. MTJ according to claim 6, which is characterized in that first ferromagnetic layer with a thickness of 1~20nm.
11. MTJ according to claim 7, which is characterized in that first ferromagnetic layer with a thickness of 1~20nm.
12. MTJ according to claim 8, which is characterized in that first ferromagnetic layer with a thickness of 1~20nm.
13. described in any item MTJ according to claim 1~5, which is characterized in that the barrier layer with a thickness of 0.1~2nm.
14. MTJ according to claim 6, which is characterized in that the barrier layer with a thickness of 0.1~2nm.
15. MTJ according to claim 7, which is characterized in that the barrier layer with a thickness of 0.1~2nm.
16. MTJ according to claim 8, which is characterized in that the barrier layer with a thickness of 0.1~2nm.
17. MTJ according to claim 9, which is characterized in that the barrier layer with a thickness of 0.1~2nm.
18. MTJ according to claim 10, which is characterized in that the barrier layer with a thickness of 0.1~2nm.
19. MTJ according to claim 11, which is characterized in that the barrier layer with a thickness of 0.1~2nm.
20. MTJ according to claim 12, which is characterized in that the barrier layer with a thickness of 0.1~2nm.
21. described in any item MTJ according to claim 1~5, which is characterized in that second ferromagnetic layer with a thickness of 0.2~
3nm, the third ferromagnetic layer with a thickness of 0.2~3nm.
22. MTJ according to claim 6, which is characterized in that second ferromagnetic layer with a thickness of 0.2~3nm, it is described
Third ferromagnetic layer with a thickness of 0.2~3nm.
23. MTJ according to claim 7, which is characterized in that second ferromagnetic layer with a thickness of 0.2~3nm, it is described
Third ferromagnetic layer with a thickness of 0.2~3nm.
24. MTJ according to claim 8, which is characterized in that second ferromagnetic layer with a thickness of 0.2~3nm, it is described
Third ferromagnetic layer with a thickness of 0.2~3nm.
25. MTJ according to claim 9, which is characterized in that second ferromagnetic layer with a thickness of 0.2~3nm, it is described
Third ferromagnetic layer with a thickness of 0.2~3nm.
26. MTJ according to claim 10, which is characterized in that second ferromagnetic layer with a thickness of 0.2~3nm, it is described
Third ferromagnetic layer with a thickness of 0.2~3nm.
27. MTJ according to claim 11, which is characterized in that second ferromagnetic layer with a thickness of 0.2~3nm, it is described
Third ferromagnetic layer with a thickness of 0.2~3nm.
28. MTJ according to claim 12, which is characterized in that second ferromagnetic layer with a thickness of 0.2~3nm, it is described
Third ferromagnetic layer with a thickness of 0.2~3nm.
29. MTJ according to claim 13, which is characterized in that second ferromagnetic layer with a thickness of 0.2~3nm, it is described
Third ferromagnetic layer with a thickness of 0.2~3nm.
30. MTJ according to claim 14, which is characterized in that second ferromagnetic layer with a thickness of 0.2~3nm, it is described
Third ferromagnetic layer with a thickness of 0.2~3nm.
31. MTJ according to claim 15, which is characterized in that second ferromagnetic layer with a thickness of 0.2~3nm, it is described
Third ferromagnetic layer with a thickness of 0.2~3nm.
32. MTJ according to claim 16, which is characterized in that second ferromagnetic layer with a thickness of 0.2~3nm, it is described
Third ferromagnetic layer with a thickness of 0.2~3nm.
33. MTJ according to claim 17, which is characterized in that second ferromagnetic layer with a thickness of 0.2~3nm, it is described
Third ferromagnetic layer with a thickness of 0.2~3nm.
34. MTJ according to claim 18, which is characterized in that second ferromagnetic layer with a thickness of 0.2~3nm, it is described
Third ferromagnetic layer with a thickness of 0.2~3nm.
35. MTJ according to claim 19, which is characterized in that second ferromagnetic layer with a thickness of 0.2~3nm, it is described
Third ferromagnetic layer with a thickness of 0.2~3nm.
36. MTJ according to claim 20, which is characterized in that second ferromagnetic layer with a thickness of 0.2~3nm, it is described
Third ferromagnetic layer with a thickness of 0.2~3nm.
37. described in any item MTJ according to claim 1~5, which is characterized in that the heavy metal layer material include tantalum, ruthenium,
One of aluminium, platinum, tungsten or copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
38. MTJ according to claim 6, which is characterized in that the heavy metal layer material include tantalum, ruthenium, aluminium, platinum, tungsten or
One of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
39. MTJ according to claim 7, which is characterized in that the heavy metal layer material include tantalum, ruthenium, aluminium, platinum, tungsten or
One of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
40. MTJ according to claim 8, which is characterized in that the heavy metal layer material include tantalum, ruthenium, aluminium, platinum, tungsten or
One of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
41. MTJ according to claim 9, which is characterized in that the heavy metal layer material include tantalum, ruthenium, aluminium, platinum, tungsten or
One of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
42. MTJ according to claim 10, which is characterized in that the heavy metal layer material includes tantalum, ruthenium, aluminium, platinum, tungsten
Or one of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
43. MTJ according to claim 11, which is characterized in that the heavy metal layer material includes tantalum, ruthenium, aluminium, platinum, tungsten
Or one of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
44. MTJ according to claim 12, which is characterized in that the heavy metal layer material includes tantalum, ruthenium, aluminium, platinum, tungsten
Or one of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
45. MTJ according to claim 13, which is characterized in that the heavy metal layer material includes tantalum, ruthenium, aluminium, platinum, tungsten
Or one of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
46. MTJ according to claim 14, which is characterized in that the heavy metal layer material includes tantalum, ruthenium, aluminium, platinum, tungsten
Or one of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
47. MTJ according to claim 15, which is characterized in that the heavy metal layer material includes tantalum, ruthenium, aluminium, platinum, tungsten
Or one of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
48. MTJ according to claim 16, which is characterized in that the heavy metal layer material includes tantalum, ruthenium, aluminium, platinum, tungsten
Or one of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
49. MTJ according to claim 17, which is characterized in that the heavy metal layer material includes tantalum, ruthenium, aluminium, platinum, tungsten
Or one of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
50. MTJ according to claim 18, which is characterized in that the heavy metal layer material includes tantalum, ruthenium, aluminium, platinum, tungsten
Or one of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
51. MTJ according to claim 19, which is characterized in that the heavy metal layer material includes tantalum, ruthenium, aluminium, platinum, tungsten
Or one of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
52. MTJ according to claim 20, which is characterized in that the heavy metal layer material includes tantalum, ruthenium, aluminium, platinum, tungsten
Or one of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
53. MTJ according to claim 21, which is characterized in that the heavy metal layer material includes tantalum, ruthenium, aluminium, platinum, tungsten
Or one of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
54. MTJ according to claim 22, which is characterized in that the heavy metal layer material includes tantalum, ruthenium, aluminium, platinum, tungsten
Or one of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
55. MTJ according to claim 23, which is characterized in that the heavy metal layer material includes tantalum, ruthenium, aluminium, platinum, tungsten
Or one of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
56. MTJ according to claim 24, which is characterized in that the heavy metal layer material includes tantalum, ruthenium, aluminium, platinum, tungsten
Or one of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
57. MTJ according to claim 25, which is characterized in that the heavy metal layer material includes tantalum, ruthenium, aluminium, platinum, tungsten
Or one of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
58. MTJ according to claim 26, which is characterized in that the heavy metal layer material includes tantalum, ruthenium, aluminium, platinum, tungsten
Or one of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
59. MTJ according to claim 27, which is characterized in that the heavy metal layer material includes tantalum, ruthenium, aluminium, platinum, tungsten
Or one of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
60. MTJ according to claim 28, which is characterized in that the heavy metal layer material includes tantalum, ruthenium, aluminium, platinum, tungsten
Or one of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
61. MTJ according to claim 29, which is characterized in that the heavy metal layer material includes tantalum, ruthenium, aluminium, platinum, tungsten
Or one of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
62. MTJ according to claim 30, which is characterized in that the heavy metal layer material includes tantalum, ruthenium, aluminium, platinum, tungsten
Or one of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
63. MTJ according to claim 31, which is characterized in that the heavy metal layer material includes tantalum, ruthenium, aluminium, platinum, tungsten
Or one of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
64. MTJ according to claim 32, which is characterized in that the heavy metal layer material includes tantalum, ruthenium, aluminium, platinum, tungsten
Or one of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
65. MTJ according to claim 33, which is characterized in that the heavy metal layer material includes tantalum, ruthenium, aluminium, platinum, tungsten
Or one of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
66. MTJ according to claim 34, which is characterized in that the heavy metal layer material includes tantalum, ruthenium, aluminium, platinum, tungsten
Or one of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
67. MTJ according to claim 35, which is characterized in that the heavy metal layer material includes tantalum, ruthenium, aluminium, platinum, tungsten
Or one of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
68. MTJ according to claim 36, which is characterized in that the heavy metal layer material includes tantalum, ruthenium, aluminium, platinum, tungsten
Or one of copper or multiple combinations, the heavy metal layer with a thickness of 5~200nm.
69. described in any item MTJ according to claim 1~5, which is characterized in that the shape of the MTJ be rectangle, circle or
One of ellipse.
70. MTJ according to claim 6, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
It is a kind of.
71. MTJ according to claim 7, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
It is a kind of.
72. MTJ according to claim 8, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
It is a kind of.
73. MTJ according to claim 9, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
It is a kind of.
74. MTJ according to claim 10, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
75. MTJ according to claim 11, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
76. MTJ according to claim 12, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
77. MTJ according to claim 13, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
78. MTJ according to claim 14, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
79. MTJ according to claim 15, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
80. MTJ according to claim 16, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
81. MTJ according to claim 17, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
82. MTJ according to claim 18, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
83. MTJ according to claim 19, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
84. MTJ according to claim 20, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
85. MTJ according to claim 21, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
86. MTJ according to claim 22, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
87. MTJ according to claim 23, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
88. MTJ according to claim 24, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
89. MTJ according to claim 25, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
90. MTJ according to claim 26, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
91. MTJ according to claim 27, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
92. MTJ according to claim 28, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
93. MTJ according to claim 29, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
94. MTJ according to claim 30, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
95. MTJ according to claim 31, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
96. MTJ according to claim 32, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
97. MTJ according to claim 33, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
98. MTJ according to claim 34, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
99. MTJ according to claim 35, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
100. MTJ according to claim 36, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
101. the MTJ according to claim 37, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
102. the MTJ according to claim 38, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
103. MTJ according to claim 39, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
104. MTJ according to claim 40, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
105. MTJ according to claim 41, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
106. MTJ according to claim 42, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
107. MTJ according to claim 43, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
108. MTJ according to claim 44, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
109. MTJ according to claim 45, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
110. MTJ according to claim 46, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
111. MTJ according to claim 47, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
112. MTJ according to claim 48, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
113. MTJ according to claim 49, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
114. MTJ according to claim 50, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
115. MTJ according to claim 51, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
116. MTJ according to claim 52, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
117. MTJ according to claim 53, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
118. MTJ according to claim 54, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
119. MTJ according to claim 55, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
120. MTJ according to claim 56, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
121. MTJ according to claim 57, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
122. MTJ according to claim 58, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
123. MTJ according to claim 59, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
124. MTJ according to claim 60, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
125. MTJ according to claim 61, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
126. MTJ according to claim 62, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
127. MTJ according to claim 63, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
128. MTJ according to claim 64, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
129. MTJ according to claim 65, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
130. MTJ according to claim 66, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
131. MTJ according to claim 67, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
132. MTJ according to claim 68, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
133. MTJ according to claim 69, which is characterized in that the shape of the MTJ is rectangle, in round or ellipse
One kind.
134. a kind of magnetic memory, which is characterized in that including it is multiple as the described in any item MTJ of claim 1~133 and with institute
State the corresponding switching tube of MTJ, in which:
The MTJ includes reading end, write-in end and common end, first ferromagnetic layer for reading end and being located at the MTJ
On, said write end is located at one end of the heavy metal layer of the MTJ, and the common end is located at the huge sum of money of the MTJ
Belonging to the other end of layer, the common end of the MTJ connects bit line BL by switching tube, and the reading end of the MTJ connects read line RL,
The write-in end of the MTJ connects source line SL；
When switching tube conducting, if a high voltage in the BL and SL, another adds low-voltage, described in
Data are written in MTJ；
When switching tube conducting, if a high voltage in the BL and RL, another adds low-voltage, from described
Data are read in MTJ.
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| WO2021189295A1 (en) * | 2020-03-25 | 2021-09-30 | 北京航空航天大学 | Magnetic random access memory and data writing method therefor |
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