CN112798153B - Flexible capacitive pressure sensor and preparation method thereof - Google Patents
Flexible capacitive pressure sensor and preparation method thereof Download PDFInfo
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- CN112798153B CN112798153B CN202011558714.6A CN202011558714A CN112798153B CN 112798153 B CN112798153 B CN 112798153B CN 202011558714 A CN202011558714 A CN 202011558714A CN 112798153 B CN112798153 B CN 112798153B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
- G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
- G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
- G01L1/148—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors using semiconductive material, e.g. silicon
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/12—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
The invention discloses a flexible capacitive sensor and a preparation method thereof. The flexible capacitive sensor comprises a first polar plate, wherein the first polar plate sequentially comprises a first flexible substrate, a first elastic microstructure positioned on the first flexible substrate, and a first electrode positioned on the first elastic microstructure; the second polar plate sequentially comprises a second flexible substrate, a second elastic microstructure positioned on the second flexible substrate, a second electrode positioned on the second elastic microstructure, and a dielectric layer positioned on the second electrode; the first elastic microstructure is triangular pyramid-shaped, and the second elastic microstructure is triangular pyramid-shaped; the arrangement mode of the first polar plate and the second polar plate enables the triangular pyramid shape of the first elastic microstructure and the triangular pyramid shape of the second elastic microstructure to be orthogonal. The flexible capacitance pressure sensor can simultaneously give consideration to wide pressure detection range and high sensitivity.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a flexible capacitance pressure sensor and a preparation method thereof.
Background
The flexible capacitance pressure sensor has the working principle that an external pressure signal is converted into a signal which changes according to the capacitance change of the sensor, and when an external force acts, the distance between electrodes, the dead area or the dielectric constant is changed to change the capacitance value of the sensor, so that the purpose of detecting the change of pressure information is achieved. Currently, wearable electronic devices have become a research hotspot. The flexible capacitance pressure sensor has the advantages of high sensitivity, good dynamic response, high resolution and the like. At present, the conventional flexible capacitive pressure sensor has some problems, such as the inability to simultaneously consider both the wide pressure detection range and the high sensitivity, which greatly limits the application range of the flexible capacitive pressure sensor.
Therefore, in view of the above technical problems, it is necessary to provide a flexible capacitive pressure sensor and a method for manufacturing the same, which can simultaneously achieve a wide pressure detection range and high sensitivity.
Disclosure of Invention
In view of the above, an object of the embodiments of the present invention is to provide a flexible capacitive pressure sensor and a method for manufacturing the same. The flexible capacitive pressure sensor provided by the embodiment of the invention is provided with two elastic triangular pyramid microstructure electrodes, a composite dielectric layer and a flexible substrate, and can simultaneously give consideration to a wide pressure detection range and high sensitivity.
In order to achieve the above object, an embodiment of the present invention provides the following technical solutions: a flexible capacitive sensor comprises a first polar plate, wherein the first polar plate sequentially comprises a first flexible substrate, a first elastic microstructure positioned on the first flexible substrate, and a first electrode positioned on the first elastic microstructure; the second polar plate sequentially comprises a second flexible substrate, a second elastic microstructure positioned on the second flexible substrate, a second electrode positioned on the second elastic microstructure, and a dielectric layer positioned on the second electrode; the first elastic microstructure is triangular pyramid-shaped, and the second elastic microstructure is triangular pyramid-shaped; the arrangement mode of the first polar plate and the second polar plate enables the triangular pyramid shape of the first elastic microstructure and the triangular pyramid shape of the second elastic microstructure to be orthogonal.
As a further improvement of the present invention, the material of the first flexible substrate or the material of the second flexible substrate is polyethylene terephthalate.
As a further improvement of the present invention, the material of the first elastic microstructure or the material of the second elastic microstructure is polydimethylsiloxane.
As a further improvement of the invention, the dielectric layer comprises aluminum oxide.
As a further improvement of the present invention, the material of the first electrode or the material of the second electrode is chromium or gold.
The embodiment of the invention also provides a preparation method of the flexible capacitive sensor. The preparation method comprises the following steps of S1: obtaining a triangular pyramid-shaped mold with a microstructure on a preset mold by adopting a photoetching or etching process; s2: spin-coating polydimethylsiloxane on the triangular pyramid-shaped die of the microstructure and laminating and bonding polyethylene terephthalate; s3: peeling the flexible substrate and the microstructure from the triangular pyramid-shaped mold to obtain the flexible substrate and the microstructure which are connected into a whole; s4: sputtering an electrode material on the surface of the microstructure to form an electrode layer; obtaining a first polar plate; s5: repeating the steps S1 to S4, and depositing aluminum oxide on the electrode layer by adopting an atomic deposition mode to form a dielectric layer; obtaining a second polar plate; s6: and assembling the first polar plate and the second polar plate in a micro-structure orthogonal mode to obtain the flexible capacitive sensor.
As a further improvement of the present invention, before step S2, the method further comprises the steps of: the method comprises the following steps of cleaning polyethylene terephthalate by using ethanol for the first time, carrying out ultrasonic cleaning on the polyethylene terephthalate cleaned by using ethanol in ionized water, blow-drying the polyethylene terephthalate subjected to ultrasonic cleaning by using nitrogen, and placing the blow-dried polyethylene terephthalate at a preset temperature for drying.
As a further improvement of the invention, the predetermined mold is a silicon mold made of a silicon wafer of silicon dioxide having a thickness of 280nm to 330 nm.
In a further improvement of the present invention, after the silicon mold is formed into a triangular pyramid shape of the microstructure, the surface of the silicon mold is treated with octadecyltrichlorosilane to impart hydrophobicity to the surface of the silicon mold.
As a further development of the invention, the electrode material comprises chromium or gold.
The invention has the following advantages:
the flexible capacitive sensor provided by the embodiment of the invention comprises two elastic triangular pyramid microstructure electrodes, a composite dielectric layer and a flexible substrate, and can simultaneously give consideration to a wide pressure detection range and high sensitivity.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the description of the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present invention, and it is also possible for those skilled in the art to obtain other drawings based on the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a flexible capacitive sensor according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of the flexible capacitive sensor of the embodiment shown in FIG. 1;
FIG. 3 is a schematic structural diagram of a first elastic microstructure of the embodiment shown in FIG. 1;
FIG. 4 is a schematic diagram of a first plate of the embodiment shown in FIG. 1;
fig. 5 is a schematic flow chart of a method for manufacturing a flexible capacitive sensor according to an embodiment of the present invention.
Description of the reference symbols in the drawings:
100. flexible capacitive sensor 1, first elastic microstructure 2 and first electrode
3. A first flexible substrate 10, a first plate 20, a second plate
21. A second elastic microstructure 22, a second electrode 23, a second flexible substrate
4. Dielectric layer
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the technical solution in the embodiment of the present invention will be clearly and completely described below with reference to the drawings in the embodiment of the present invention, and it is obvious that the described embodiment is only a part of the embodiment of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1 and 2, a flexible capacitive sensor 100 is provided according to a first embodiment of the present invention. In this embodiment, flexible capacitive sensor 100 includes a first plate 10 and a second plate 20.
With continued reference to fig. 3 and 4, the first plate 10 sequentially includes a first flexible substrate 3, a first elastic microstructure 1 located on the first flexible substrate 3, and a first electrode 2 located on the first elastic microstructure 1. The material of the first flexible substrate 3 is polyethylene terephthalate, which ensures the flexibility of the first flexible substrate 3. With continued reference to fig. 4, the first elastic microstructure 1 is triangular pyramidal. The material of the first elastic microstructure 1 is polydimethylsiloxane, so as to ensure that the first elastic microstructure 1 also has elasticity. The first electrode 2 is made of chromium or gold to ensure good conductivity.
With continued reference to fig. 1 and fig. 2, the second plate 20 sequentially includes a second flexible substrate 23, a second elastic microstructure 21 located on the second flexible substrate 23, a second electrode 22 located on the second elastic microstructure 21, and a dielectric layer 4 located on the second electrode 22. In this embodiment, preferably, for process simplicity and to ensure symmetry between the first and second electrode plates 10 and 20, the structure and material of the second flexible substrate 23 are kept consistent with those of the first flexible substrate 3, the structure and material of the second electrode 22 are kept consistent with those of the first electrode 2, and the structure and material of the second elastic microstructure 21 are kept consistent with those of the first elastic microstructure 1. Of course, as will be appreciated by those skilled in the art, the material and structure of the second plate 20 may be selected in other situations that are not exactly the same as the material and structure of the first plate 10.
The material of the dielectric layer 4 comprises alumina. When the flexible capacitive sensor 100 works, the dielectric layer between the first plate 10 and the second plate 20 is a composite dielectric layer formed by mixing alumina and air.
With reference to fig. 1 and fig. 2, in the present embodiment, the first electrode plate 10 and the second electrode plate 20 are arranged in such a manner that the triangular pyramid shape of the first elastic microstructure 3 is orthogonal to the triangular pyramid shape of the second elastic microstructure 23. The orthogonal arrangement mode can not only well utilize the space shape of the triangular pyramid, so as to better obtain a mixed dielectric layer with high dielectric constant and air and alumina mixture, and obtain a wider detection range; the elastic action of the contact of the two triangular pyramid tops can be better utilized, and good sensitivity and dynamic response can be obtained.
When pressure acts on the surfaces of the first flexible substrate 3 or/and the second flexible substrate 23, on one hand, the pressure acts to change the distance between the electrodes attached to the microstructure, and meanwhile, due to the deformation of the microstructure under the action of the pressure, the facing area between the electrodes attached to the microstructure is changed; on the other hand, the pressure action changes the dielectric constant of the composite dielectric layer, which is beneficial to improving the sensitivity of the sensor and the pressure detection range of the sensor.
The flexible capacitive pressure sensor 100 provided by the embodiment of the invention comprises two elastic triangular pyramid microstructures, electrodes attached to the elastic triangular pyramid microstructures, a composite dielectric layer formed by mixing aluminum oxide and air, and a flexible substrate made of polyethylene terephthalate, wherein the flexible capacitive pressure sensor 100 has an obvious response signal to pressure, has good sensitivity and dynamic response, and has a large pressure detection range.
As shown in fig. 5, an embodiment of the present invention further provides a method for manufacturing a flexible capacitive sensor. The preparation method comprises 6 steps, and the content of each specific step is as follows.
Step S1: and (3) obtaining the triangular pyramid-shaped mold with the microstructure on a preset mold by adopting a photoetching or etching process. In one embodiment, the predetermined mold is a silicon mold made of a silicon wafer with a thickness of 280nm to 330 nm. In particular, the microstructure and the electrodes are manufactured on the basis of a MEMS process, the microstructured silicon mold being made of SiO with a thickness of 300nm 2 Is/are as follows<100>Preparing a silicon wafer: first, a mask for preparing a triangular pyramid microstructure is drawn, and then a wafer is patterned by photolithography to generate a wafer having exposed SiO 2 The open pattern shape of (a); etching exposed SiO with buffered hydrofluoric acid (BOE) 2 Then putting the wafer into deionized water for ultrasonic cleaning for 5min, etching the wafer by potassium hydroxide (KOH) solution to generate a triangular pyramid microstructure, and etching residual SiO by buffered hydrofluoric acid (BOE) after the microstructure is formed 2 Then, the wafer is placed into deionized water for ultrasonic cleaning for 10min, and finally, nitrogen is used for blow-drying.
Step S2: and spin-coating polydimethylsiloxane on the triangular pyramid-shaped mold of the microstructure and laminating and bonding polyethylene terephthalate. Preferably, after the silicon mold forms a triangular pyramid shape of the microstructure, the surface of the silicon mold is treated with octadecyltrichlorosilane to make the surface of the silicon mold hydrophobic. Then, polydimethylsiloxane was spin-coated on the surface of the silicon mold by a spin coater to transfer the microstructure on the silicon mold, and after subjecting polyethylene terephthalate to oxygen ion treatment for 5min, it was laminated on an uncured polydimethylsiloxane film, clamped at room temperature under a pressure exceeding 12MPa for 15min, and then cured at 80 ℃ for 3h under the same pressure.
Preferably, a pretreatment step of polyethylene terephthalate is further included before step S2: the method comprises the following steps of cleaning polyethylene terephthalate by using ethanol for the first time, carrying out ultrasonic cleaning on the polyethylene terephthalate cleaned by using ethanol in ionized water, blow-drying the polyethylene terephthalate subjected to ultrasonic cleaning by using nitrogen, and placing the blow-dried polyethylene terephthalate at a preset temperature for drying. Specifically, the time period of the first cleaning is 5 minutes, the time period of the ultrasonic cleaning in the ionized water is 10 minutes, and the preset temperature is 80 ℃.
And step S3: and peeling the flexible substrate and the microstructure from the triangular pyramid-shaped mold to obtain the flexible substrate and the microstructure which are connected into a whole.
And step S4: sputtering an electrode material on the surface of the microstructure to form an electrode layer; a first plate is obtained. The specific sputtering method may be a magnetron sputtering method. The electrode material may be specifically chromium or gold. Upon completion of step S4, the first plate 10 of the flexible capacitive sensor 100 is obtained.
Step S5: repeating the steps S1 to S4, and depositing aluminum oxide on the electrode layer by adopting an atomic deposition mode to form a dielectric layer; upon completion of step S5, the second plate 20 of the flexible capacitive sensor 100 is obtained.
Step S6: the first plate 10 and the second plate 20 are assembled in a microstructure orthogonal manner, and the flexible capacitive sensor 100 is obtained.
The flexible capacitive sensor provided by the embodiment of the invention comprises two elastic triangular pyramid microstructure electrodes, a composite dielectric layer and a flexible substrate, and can simultaneously give consideration to a wide pressure detection range and high sensitivity.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (10)
1. A flexible capacitive sensor, comprising:
the first polar plate sequentially comprises a first flexible substrate, a first elastic microstructure positioned on the first flexible substrate, and a first electrode positioned on the first elastic microstructure;
the second polar plate sequentially comprises a second flexible substrate, a second elastic microstructure positioned on the second flexible substrate, a second electrode positioned on the second elastic microstructure, and a dielectric layer positioned on the second electrode;
the first elastic microstructure is triangular pyramid-shaped, and the second elastic microstructure is triangular pyramid-shaped;
the arrangement mode of the first polar plate and the second polar plate enables the triangular pyramid shape of the first elastic microstructure and the triangular pyramid shape of the second elastic microstructure to be orthogonal, and the elastic action of two triangular pyramid-shaped cone tops is utilized when the two triangular pyramid-shaped cone tops are in contact.
2. A flexible capacitive sensor according to claim 1, wherein the material of the first flexible substrate or the material of the second flexible substrate is polyethylene terephthalate.
3. The flexible capacitive sensor of claim 1, wherein the material of the first elastic microstructure or the material of the second elastic microstructure is polydimethylsiloxane.
4. A flexible capacitive sensor according to claim 1 wherein the dielectric layer comprises alumina.
5. A flexible capacitive sensor according to claim 1, wherein the material of the first electrode or the material of the second electrode is chromium or gold.
6. A method for preparing a flexible capacitive sensor, the method comprising the steps of:
s1: obtaining a triangular pyramid-shaped mold with a microstructure on a preset mold by adopting a photoetching or etching process;
s2: spin-coating polydimethylsiloxane on the triangular pyramid-shaped mold of the microstructure and laminating and bonding polyethylene terephthalate;
s3: peeling the flexible substrate and the microstructure from the triangular pyramid-shaped mold to obtain the flexible substrate and the microstructure which are connected into a whole;
s4: sputtering an electrode material on the surface of the microstructure to form an electrode layer; obtaining a first polar plate;
s5: repeating the steps S1 to S4, and depositing aluminum oxide on the electrode layer by adopting an atomic deposition mode to form a dielectric layer; obtaining a second polar plate;
s6: and assembling the first polar plate and the second polar plate in a microstructure orthogonal mode to enable the two triangular pyramid-shaped conical tops to be in contact with each other, so as to obtain the flexible capacitive sensor.
7. The method of claim 6, further comprising, before step S2, the steps of: the method comprises the following steps of cleaning polyethylene terephthalate by using ethanol for the first time, carrying out ultrasonic cleaning on the polyethylene terephthalate cleaned by using ethanol in ionized water, blow-drying the polyethylene terephthalate subjected to ultrasonic cleaning by using nitrogen, and placing the blow-dried polyethylene terephthalate at a preset temperature for drying.
8. The method according to claim 6, wherein the predetermined mold is a silicon mold made of a silicon wafer of silicon dioxide having a thickness of 280nm to 330 nm.
9. The method of claim 8, wherein after the silicon mold forms the triangular pyramid of the microstructure, the surface of the silicon mold is treated with octadecyltrichlorosilane to make the surface of the silicon mold hydrophobic.
10. The method of claim 6, wherein the electrode material comprises chromium or gold.
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| CN113959603A (en) * | 2021-10-09 | 2022-01-21 | 厦门大学 | Flexible capacitive pressure sensor and manufacturing method thereof |
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