CN112789715A - Guide device of dryer for semiconductor wafer - Google Patents
Guide device of dryer for semiconductor wafer Download PDFInfo
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- CN112789715A CN112789715A CN201980065262.7A CN201980065262A CN112789715A CN 112789715 A CN112789715 A CN 112789715A CN 201980065262 A CN201980065262 A CN 201980065262A CN 112789715 A CN112789715 A CN 112789715A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 238000001035 drying Methods 0.000 claims abstract description 66
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000008367 deionised water Substances 0.000 claims abstract description 25
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 25
- 238000005406 washing Methods 0.000 claims abstract description 7
- 235000012431 wafers Nutrition 0.000 claims description 165
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 38
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000011010 flushing procedure Methods 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 24
- 238000004140 cleaning Methods 0.000 abstract description 8
- 239000000126 substance Substances 0.000 abstract description 5
- 230000008929 regeneration Effects 0.000 abstract description 3
- 238000011069 regeneration method Methods 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 description 11
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000005499 meniscus Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 101100165177 Caenorhabditis elegans bath-15 gene Proteins 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012855 volatile organic compound Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/6773—Conveying cassettes, containers or carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention relates to a guide device of a semiconductor wafer dryer, which is used for drying a semiconductor wafer which is cleaned by deionized water and is treated by chemical solution such as cleaning solution, etc., when the semiconductor wafer is moved from a washing tank to a drying tank in a lifting mode for Manlangoni drying, in order to prevent the wafer which is slightly twisted or bent from being stuck to each other due to surface tension gradient when the wafer is separated from the water surface in the process of using a memory device with a large number of 3D processes and the wafer regeneration process, and the inner circumferential surface of the washing tank is provided with a wafer guide device, thereby preventing the wafer which is slightly twisted or bent from being damaged to a normal wafer.
Description
Technical Field
The present invention relates to a guide device of a semiconductor wafer dryer, and more particularly, to a guide device of a semiconductor wafer dryer, which is configured to prevent a wafer from being damaged by forming a wafer guide on an inner circumferential surface of a rinsing bath (drying bath) in order to prevent the wafer from being stuck to each other due to a surface tension gradient (gradient) when the wafer is detached from a water surface when moving up and down from the rinsing bath (rinsing bath) to the drying bath (drying bath) in order to dry a semiconductor wafer, which is cleaned with deionized water (DI water), and is treated with a chemical solution such as a cleaning solution.
Background
Generally, in the entire process of manufacturing a semiconductor, a rinsing and drying process is most commonly used. For example, in the cleaning process, after impurities such as particles and a natural oxide film are removed by a cleaning liquid, a rinsing and drying process is used to remove the remaining cleaning liquid.
In a process of etching or etching a predetermined material film, a rinsing and drying process is also performed as a final step. The rinsing process is a process of washing a semiconductor wafer treated with a chemical solution such as a washing solution with deionized water, and the drying process is a process of drying the semiconductor wafer subjected to the rinsing process.
In the above-mentioned rinsing and drying processes, it is important to prevent the generation of so-called watermarks (water marks) on the silicon wafer.
The watermark is a silicon oxide film produced by dissolving oxygen in the atmosphere in deionized water remaining on a wafer and reacting the dissolved oxygen with the silicon wafer.
Therefore, in the case of the watermark, when the wafer subjected to the rinsing process is moved from the rinsing tank to the drying tank, the watermark is generated by exposing the wafer to the atmosphere. Such watermarks are generated more as the wafer is exposed to the atmosphere for longer periods of time.
In order to solve the above-described problem of occurrence of watermarks on wafers, a cleaning solution treatment and a rinsing process are generally performed in sequence in a tank in which a semiconductor wafer is loaded, and then a drying process is performed using a marangoni dryer (marangoni dryer) provided in an upper portion of the tank.
The marangoni drying described above is based on surface tension gradient forces. In this technique, when a substrate wafer is slowly recovered from water, a volatile organic compound such as isopropyl alcohol (IPA) having a lower surface tension than water is introduced in the form of vapor in the vicinity of a substrate semiconductor wafer.
As a small amount of alcohol vapor comes into contact with the constantly replenished water meniscus (water meniscus), the alcohol vapor is absorbed by the water, creating a surface tension gradient. This gradient causes the meniscus to partially contract and shows a significantly limited flow angle.
This causes a thin film of water to flow from the substrate surface and dry it. This flow also helps to remove non-volatile contaminants and suspended entrained (entrained) particles.
In a known marangoni dryer, the semiconductor wafer is immersed in deionized water. A sealing lid or cover is positioned over the bath containing the soaked wafers to create a sealed process chamber. Air is removed from the chamber along with nitrogen and the IPA bubbler produces IPA vapor which is introduced into the chamber along with the nitrogen.
In another known approach, the wafer is immersed in a bath of dilute concentration of hydrofluoric acid. After treatment by means of an acid bath, the deionized water is introduced into the bath and the hydrofluoric acid is cleaned by overflow.
Followed by marangoni drying as described above.
Without marangoni drying, the surface tension of DI water on small-sized semiconductor wafer features (e.g., 30 nm features) may cause damage to the features due to their surface tension-generated sticky, pulled, bent, or broken structures.
That is, by drying marangoni, damage to the features can be prevented.
In view of this, patent application No. 10-2017 and 7028571 disclose a wafer dryer apparatus and method.
In detail, a conventional general semiconductor wafer drying apparatus includes: a wafer receiving canister as a wafer receiving canister including a canister body defining an inner canister chamber, the inner canister chamber including an upper end chamber portion, a lower end chamber portion, an uppermost portion and a bottom portion, the uppermost portion being provided with a wafer carrier receiving open portion communicating with the canister chamber, the canister being adjustable in size for receiving a first wafer carrier and one or more semiconductor wafers thereon simultaneously, the canister further including a liquid inlet communicating with the lower end canister chamber portion and being adapted to be connected to a source of cleaning liquid, the canister chamber being provided with at least one overflow drain port in the upper end canister chamber portion, liquid from the liquid inlet flowing upwardly to the at least one overflow drain port, the canister being provided with a drain outlet communicating with the lower end canister chamber portion; a wafer carrier elevator positioned within the tank chamber and configured to accommodate the first wafer carrier and the one or more semiconductor wafers thereon through the wafer carrier accommodation opening, the wafer carrier elevator being operable to raise and lower the first wafer carrier and the one or more semiconductor wafers thereon from a first lower wafer carrier position, in which the wafer carrier elevator is also operable to lower the first wafer carrier and the one or more semiconductor wafers thereon from a second elevated wafer carrier transfer position above the wafer carrier accommodation opening, when the first wafer carrier and the one or more semiconductor wafers thereon are immersed in the liquid within the internal tank chamber, as follows: raising the first wafer carrier with the one or more semiconductor wafers from the first wafer carrier position to a second elevated wafer carrier transfer position at a controlled wafer lift speed; a wafer drying chamber connected to the canister and movable from a first drying chamber position covering the wafer carrier receiving opening to a second drying chamber position offset from the wafer carrier receiving opening, a second wafer carrier disposed within the wafer drying chamber, the wafer drying chamber operable to receive one or more wafers lifted above the first wafer carrier to the second elevated wafer carrier transfer position for providing mixed isopropyl alcohol and nitrogen gas to a surface of the wafer when the wafer is lifted by the wafer carrier lift to the liquid exterior toward the second elevated wafer transfer position, the wafer drying chamber including a first gas inlet for connection to a source of mixed isopropyl alcohol and nitrogen gas for drying at least a portion of the surface of the wafer by a surface tension gradient when the wafer is lifted to the liquid exterior, sufficient IPA is present in the isopropanol and nitrogen mixture; a wafer drying chamber mover for moving the wafer drying chamber between a first drying chamber position and a second drying chamber position; at least one gas applicator comprising a valve connected to the canister chamber and operating in the form of: the liquid may be drained from the canister through a drain while draining the canister to expose the first carrier and the wafer lifter at a rate that dries at least a portion of the surfaces of the first carrier and the wafer lifter with isopropyl alcohol and nitrogen gas, and the wafer drying chamber mover may be operated as follows: the wafer drying chamber and the second wafer carrier are moved together with one or more wafers stored therein from the first drying chamber position to the second drying chamber position and from the second drying chamber position to the first drying chamber position, and at least one gas applying device is disposed in the tank chamber so as to be connected to a nitrogen gas source so as to continuously dry the first wafer carrier and the wafer lifter after the wafer lifter and the first wafer carrier are exposed, together with the wafer drying chamber in the second drying chamber position, so as to transport nitrogen gas through the first wafer carrier.
However, in the conventional general semiconductor wafer drying apparatus having such a configuration, the problem of deposition of substances on the processed and dried wafer, for example, a liquid that leaves a watermark on the wafer, can be solved by the above configuration, but when the wafer is lifted from the lower end tank part to the upper end tank part and is detached from the water surface, the wafer is still slightly distorted or the curved wafers are stuck to each other due to a surface tension gradient in a plurality of processes, for example, a process using a memory device having a large number of 3D processes with a large curvature or a wafer regeneration process, and thus there is a problem of damage to a normal wafer.
(patent document 1) korean patent application No. 10-2017 and 7028571, application date (international): 2016, 03 month and 03 days
Disclosure of Invention
The present invention has been made to solve the above problems, and an object of the present invention is to provide a guide apparatus for a semiconductor wafer dryer, which is configured to prevent a wafer from being stuck to each other due to a surface tension gradient when a wafer, which is slightly distorted or bent in a process using a memory device having a large number of 3D processes and is lifted and lowered in order to dry a semiconductor wafer cleaned with deionized water and processed with a chemical solution such as a cleaning solution, is separated from a rinsing bath and moved to a drying bath in order to dry the semiconductor wafer, and to prevent the wafer, which is slightly distorted or bent, from being damaged to a normal wafer by configuring a wafer guide apparatus on an inner circumferential surface of the rinsing bath.
Another object of the present invention will become apparent while describing it.
The guide device of the semiconductor wafer dryer according to the present invention for achieving the above object is characterized by comprising: and a guide member provided on an inner circumferential surface of the rinsing bath so as to prevent wafers from sticking to each other due to a surface tension gradient when the wafers are subjected to marangoni drying by the semiconductor wafer drying machine, wherein the guide member has a plurality of guide grooves formed at regular intervals on each surface thereof and arranged to face each other, in order to guide the plurality of wafers individually when the slotter on which the plurality of wafers are placed moves in a direction of the drying bath by driving of the lifter, wherein the semiconductor wafer drying machine includes: a rinsing tank provided in a lower part of an inner side of the housing forming an external appearance, a bottom surface of the rinsing tank being formed in a form capable of storing deionized water after the deionized water is supplied through a deionized water supply port of the pipe, an upper part of the rinsing tank being opened in a form allowing the supplied deionized water to overflow, and a discharge part for guiding the overflowing deionized water in a direction of the discharge port being formed in an upper part of an outer side surface of the rinsing tank; an elevator which is positioned in the washing tank and is provided in a form that the slotter can be lifted, wherein a plurality of placing grooves are formed on the upper part of the slotter so as to enable a plurality of wafers to be placed at certain intervals; and a drying tank which is positioned above the rinsing tank provided in the housing and is provided so that the wafers can be dried by spraying isopropyl alcohol and high-temperature nitrogen onto the plurality of wafers lifted by the lifter through the spray supply unit.
The guide member is provided so as to be movable to the discharge side of the rinse tank by the moving means, and is characterized in that the guide member guides the plurality of wafers only when the slotter on which the plurality of wafers are placed is moved to the drying tank side by the lifter.
As described above, according to the guide apparatus of the semiconductor wafer dryer of the present invention, since the guide member is provided on the inner side surface of the rinsing bath, when moving up and down from the rinsing bath to the drying bath for marangoni drying, the wafer which is slightly distorted or bent during the process using the memory device having a large curvature and a 3D process or the wafer regeneration process is guided and lifted up separately from the normal wafer, and thus there is an effect that the wafer which is slightly distorted or bent is not stuck to the normal wafer due to the surface tension gradient, and the wafer which is slightly distorted or bent can be prevented from being damaged to the normal wafer.
Drawings
Fig. 1 is a perspective view showing a semiconductor wafer dryer provided with a guide device of the semiconductor wafer dryer according to the present invention.
Fig. 2 is a perspective view showing a state in which a guide device of a dryer for a semiconductor wafer according to the present invention is disposed in a rinsing bath.
Fig. 3 is a view showing a slotter and an elevator of a drying machine for semiconductor wafers provided with a guide device of the drying machine for semiconductor wafers according to the present invention.
Fig. 4 is a view showing a drying tank of a semiconductor wafer dryer provided with a guide device of the semiconductor wafer dryer according to the present invention.
Fig. 5 is a sectional view showing a state in which a guide of a dryer for a semiconductor wafer according to the present invention is disposed in a rinsing bath.
Fig. 6 is a sectional view showing a state in which a guide of a dryer for a semiconductor wafer is coupled to a moving means according to the present invention.
Detailed Description
Hereinafter, an embodiment of a guide device of a dryer for a semiconductor wafer according to the present invention will be described in detail.
First, it should be noted that the same constituent elements or components in the drawings should show the same reference numerals as much as possible. In the description of the present invention, detailed descriptions of related well-known functions and configurations are omitted in order to avoid obscuring the gist of the present invention.
As shown in the drawings, the guide device 100 of the semiconductor wafer drying machine according to the present invention includes a guide member 110 provided at an inner circumferential surface of a rinsing groove 12 so as to prevent wafers from sticking to each other due to a surface tension gradient when the wafers are subjected to marangoni drying by the semiconductor wafer drying machine 10, and a plurality of guide grooves 111 are formed at respective surfaces of the guide member 110 at regular intervals and provided in a manner of facing each other when a slotter 13 on which the plurality of wafers are seated is moved toward a drying groove 15 by driving of an elevator 14 in order to be able to guide the plurality of wafers individually, wherein the semiconductor wafer drying machine 10 includes: a rinse tank 12 provided at a lower portion of an inner side of the outer case 11 forming an external appearance, having a bottom surface formed in a form capable of storing deionized water (DI) supplied through a deionized water supply port 12a of a pipe, and an upper portion opened in a form of overflowing the supplied deionized water, and having a discharge portion 12c formed at an upper portion of an outer side surface for guiding the overflowing deionized water to a discharge port 12b side; an elevator 14 located in the rinse tank 12 and provided in such a manner as to be able to elevate the slotter 13, the slotter 13 being formed with a plurality of seating grooves at an upper portion so as to enable a plurality of wafers to be seated at regular intervals; and a drying tank 15 which is located above the rinsing tank 12 provided in the housing 11 and is provided to be capable of drying the wafers by spraying isopropyl alcohol (IPA) and high-temperature nitrogen to the plurality of wafers lifted by the lifter 14 through a spray supply unit (not shown).
Here, the guide member 110 is provided to be movable toward the discharge portion 12b of the rinse tank 12 by the moving device 130 so as to guide the plurality of wafers only when the slotter 13 on which the plurality of wafers are placed is moved toward the drying tank 15 by the lifter 14.
Hereinafter, since the semiconductor wafer dryer is well known, a detailed description thereof will be omitted, and only the guide device of the semiconductor wafer dryer according to the present invention as described above will be described in more detail with reference to fig. 1 to 6 as follows.
In other words, the guide member 110 of the guide apparatus for the semiconductor wafer dryer according to the present invention as described above is formed in a quadrangular plate shape so as to be respectively disposed at both inner side surfaces of the rinsing bath 12 facing each other, and a plurality of guide grooves 111 are respectively formed at each surface at regular intervals in the longitudinal direction in a form corresponding to the seating grooves formed at the slotter 13 so as not to be stuck to each other due to a surface tension gradient when the wafer is separated from the water surface of the deionized water, but to be vertically raised while maintaining a spaced distance from each other.
The mobile device 130 includes: a moving cylinder 131 which is fixedly installed on the outer surface of the discharge portion of the flushing tank 12 and is installed so that air pressure or hydraulic pressure can be introduced and discharged by the control of the control portion; the connection member 135 has one end inserted into the movement cylinder 131 and the other end fixed to the guide members 110 positioned on both inner surfaces of the flushing tank 12 through a movement hole 133 perforated so as to communicate with the discharge portion 12b, and is provided so that the guide members 110 can move toward the discharge portion 12b in response to the driving of the movement cylinder 131.
The guide device of the semiconductor wafer dryer according to the present invention configured as above is installed at a position facing the inner circumferential surface of the rinsing bath 12, and after rinsing with deionized water stored in the rinsing bath 12 and overflowing toward the discharge portion 12b side, if the lifter 14 is driven to dry a plurality of wafers being rinsed, as shown in fig. 1 to 5, a plurality of wafers are placed at a certain interval in the placement bath in order to move the slotter 13 on which the plurality of wafers are placed toward the drying bath 15 side and ascend.
At this time, the plurality of wafers are guided to the guide grooves 111 of the guide members 110 provided on both inner surfaces of the rinsing groove 12 and are simultaneously raised.
Thereafter, the wafers are guided along the guide grooves 111 of the guide member 110 and are lifted up until they are separated from the water surface of the deionized water, so that they do not stick to each other due to the surface tension gradient.
Thus, the wafer which is slightly twisted or bent can be prevented from being damaged to a normal wafer.
The above description is merely illustrative of the technical idea of the present invention, and various modifications and variations can be made by those having ordinary knowledge in the technical field to which the present invention pertains without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain the technical spirit of the present invention, and the scope of the technical spirit of the present invention is not limited by such embodiments. The scope of the invention should be construed by the appended claims, and all technical ideas within the scope of equivalents thereof should be construed as being included in the scope of the claims.
Claims (3)
1. A guide device of a dryer for semiconductor wafers, comprising:
a guide member (110) provided on an inner peripheral surface of the rinsing bath (12) so as to prevent wafers from sticking to each other due to a surface tension gradient when each wafer is subjected to marangoni drying by the semiconductor wafer drying machine (10), wherein a plurality of guide grooves (111) are formed at regular intervals on each surface of the guide member (110) and are provided so as to face each other when a slotter (13) on which a plurality of wafers are placed moves toward a drying bath (15) by driving of an elevator (14), in order to be able to guide the plurality of wafers individually, wherein the semiconductor wafer drying machine (10) comprises: a rinsing tank (12) which is provided at the lower part of the inner side of a housing (11) forming the appearance, the bottom surface of which is formed in a form capable of storing deionized water after the deionized water is supplied through a deionized water supply port (12a) of a pipe, the upper part of which is opened in a form that the supplied deionized water overflows, and the upper part of the outer side surface of which is formed with a discharge part (12c) for guiding the overflowing deionized water in the direction of a discharge port (12 b); an elevator (14) which is positioned in the washing tank (12) and is provided in a form that the slotter (13) can be lifted, wherein a plurality of placing grooves are formed on the upper part of the slotter (13) so that a plurality of wafers can be placed at certain intervals; and a drying tank (15) which is positioned above the rinsing tank (12) provided in the housing (11) and is provided so that the wafers can be dried by spraying isopropyl alcohol and high-temperature nitrogen onto the plurality of wafers lifted by the lifter (14) through the spray supply unit.
2. The guide device of a dryer for semiconductor wafers as set forth in claim 1,
the guide member (110) is provided so as to be movable toward the discharge section (12b) of the rinse tank (12) by a moving device (130) and guides the plurality of wafers only when the slotter (13) on which the plurality of wafers are placed is moved toward the drying tank (15) by the lifter (14).
3. The guide apparatus of a dryer for semiconductor wafers as set forth in claim 2, wherein the moving means (130) comprises:
a moving cylinder (131) which is fixedly arranged on the outer side surface of the discharge part of the washing tank (12) and is arranged in a mode that air pressure or hydraulic pressure can flow in and out through the control of the control part; and a connecting member (135) having one end inserted into the moving cylinder (131) and the other end fixed to the guide members (110) positioned on both inner surfaces of the flushing tank (12) through a moving hole (133) perforated so as to communicate with the discharge section (12b), and provided so that the guide members (110) can move toward the discharge section (12b) in accordance with the driving of the moving cylinder (131).
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020180169356A KR102035626B1 (en) | 2018-12-26 | 2018-12-26 | Guide device of drier for semiconductor wafer |
| KR10-2018-0169356 | 2018-12-26 | ||
| PCT/KR2019/017859 WO2020138812A1 (en) | 2018-12-26 | 2019-12-17 | Apparatus for guiding drier for semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112789715A true CN112789715A (en) | 2021-05-11 |
Family
ID=68460929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980065262.7A Pending CN112789715A (en) | 2018-12-26 | 2019-12-17 | Guide device of dryer for semiconductor wafer |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR102035626B1 (en) |
| CN (1) | CN112789715A (en) |
| WO (1) | WO2020138812A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115031509B (en) * | 2022-05-18 | 2023-06-30 | 扬州思普尔科技有限公司 | Lifting type semiconductor wafer drying device |
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|---|---|---|---|---|
| JPH10270410A (en) * | 1997-03-28 | 1998-10-09 | Dainippon Screen Mfg Co Ltd | Wafer drying device |
| JP2002343757A (en) * | 2001-05-15 | 2002-11-29 | Mitsubishi Electric Corp | Tank, apparatus, and method for washing semiconductor wafer |
| US20040045185A1 (en) * | 2002-09-06 | 2004-03-11 | Samsung Electronics Co., Ltd. | Apparatus for drying semiconductor wafer using vapor dry method |
| KR20150009487A (en) * | 2014-08-26 | 2015-01-26 | 오진성 | Substrate dryer |
| CN105359259A (en) * | 2013-07-01 | 2016-02-24 | 应用材料公司 | Single use rinse in a linear marangoni drier |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07297165A (en) * | 1994-04-22 | 1995-11-10 | Nippon Steel Corp | Method of drying cleaning liquid for semiconductor substrate |
| KR100715983B1 (en) * | 2005-11-23 | 2007-05-08 | 세메스 주식회사 | Apparatus and method for cleaning substrates |
| KR100872995B1 (en) * | 2007-09-07 | 2008-12-09 | 주식회사 케이씨텍 | Apparatus for treating substrate, and method for treating substrate using the same |
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2018
- 2018-12-26 KR KR1020180169356A patent/KR102035626B1/en active IP Right Grant
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2019
- 2019-12-17 WO PCT/KR2019/017859 patent/WO2020138812A1/en active Application Filing
- 2019-12-17 CN CN201980065262.7A patent/CN112789715A/en active Pending
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| JPH10270410A (en) * | 1997-03-28 | 1998-10-09 | Dainippon Screen Mfg Co Ltd | Wafer drying device |
| JP2002343757A (en) * | 2001-05-15 | 2002-11-29 | Mitsubishi Electric Corp | Tank, apparatus, and method for washing semiconductor wafer |
| US20040045185A1 (en) * | 2002-09-06 | 2004-03-11 | Samsung Electronics Co., Ltd. | Apparatus for drying semiconductor wafer using vapor dry method |
| CN105359259A (en) * | 2013-07-01 | 2016-02-24 | 应用材料公司 | Single use rinse in a linear marangoni drier |
| KR20150009487A (en) * | 2014-08-26 | 2015-01-26 | 오진성 | Substrate dryer |
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| KR102035626B1 (en) | 2019-10-23 |
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