TWI831026B - Substrate processing method and substrate processing apparatus - Google Patents

Abstract

The present invention provides a substrate processing method and a substrate processing apparatus. The substrate processing method include a step (S14) of reserving dilute isopropyl alcohol (dIPA) that is diluted isopropyl alcohol in a processing tank (3) and an immersing step (S15) of immersing a substrate (W) subjected to water-repellent treatment in the dilute isopropyl alcohol (dIPA) in the processing tank (3).

Description

Substrate processing method and substrate processing device

The present invention relates to a substrate processing method and a substrate processing device.

The process for processing a substrate such as a semiconductor wafer and manufacturing a product such as a semiconductor device includes: a chemical liquid treatment process, which uses a chemical liquid to treat the substrate; and a cleaning (rinse) process, which uses a cleaning liquid to remove the liquid from the substrate. Surface removal chemical solution; and drying process to dry the substrate.

However, the pattern formed on the surface of the substrate may collapse during the drying process. The cause of pattern collapse comes from the surface tension of the cleaning fluid that invades the pattern.

Therefore, in order to prevent the pattern from collapsing, a water-repellent agent is supplied to the substrate and the pattern is covered with a water-repellent protective film. For example, Patent Document 1 discloses a substrate processing method that sequentially performs chemical liquid treatment, pure water cleaning, alcohol rinse, water repellency treatment, alcohol rinse, pure water rinse, and drying on the substrate. handle. The alcohol cleaning process after the water-repellent treatment is a process in which the water-repellent agent remaining on the surface of the substrate is replaced with IPA (isopropyl alcohol; isopropyl alcohol) and removed. [Prior technical literature] [Patent Document]

[Patent Document 1] Japanese Patent Application Publication No. 2010-114414.

[Problem to be solved by the invention]

However, when alcohol cleaning is performed after the water-repellent treatment, the water-repellent agent remaining on the surface of the substrate may react with IPA to generate particles. As a result, the cleanliness of the substrate may decrease.

The present invention was developed in view of the above problems, and aims to provide a substrate processing method and a substrate processing device that can improve the cleanliness of the substrate. [Means used to solve problems]

One aspect of the present invention is a substrate processing method, which is a method for processing a substrate. The aforementioned substrate treatment method includes: a step of storing diluted isopropyl alcohol in a treatment tank, and the aforementioned diluted isopropyl alcohol is diluted isopropyl alcohol; and an immersion step of immersing the aforementioned substrate that has undergone water-repellent treatment in The aforementioned diluted isopropyl alcohol in the aforementioned treatment tank.

In one embodiment, the substrate processing method further includes the step of drying the substrate after the water-repellent treatment before immersing the substrate in the diluted isopropyl alcohol in the treatment tank.

In one embodiment, the substrate treatment method further includes the step of supplying a vaporized water-repellent agent into a closed space for accommodating the treatment tank, and subjecting the substrate to water-repellent treatment.

In one embodiment, the substrate processing method further includes the following steps: immersing the substrate in a cleaning solution stored in the processing tank; scooping up the substrate from the cleaning solution; and removing the cleaning solution from the cleaning solution. Drain the treatment tank. After the aforementioned cleaning liquid is discharged, the aforementioned water-repellent treatment is performed.

In one embodiment, after the water-repellent treatment, the vaporized organic solvent is supplied into the closed space.

In one embodiment, the pressure in the sealed space is reduced and the water-repellent treatment is performed.

In one embodiment, the substrate processing method further includes the step of returning the pressure in the sealed space to atmospheric pressure before storing the diluted isopropyl alcohol in the processing tank.

In one embodiment, the substrate processing method further includes the following steps: a scooping up step of scooping up the substrate from the diluted isopropyl alcohol; and a drying step of scooping up the diluted isopropyl alcohol. Dry the substrate.

In one embodiment, the substrate processing method further includes the following step: before the lifting step, the vaporized organic solvent is supplied into a sealed space for accommodating the processing tank. The drying step includes a step of supplying an inert gas into the sealed space.

In one embodiment, the drying process is performed while reducing the pressure in a sealed space for accommodating the treatment tank.

In one embodiment, in the immersion step, the diluted isopropyl alcohol is supplied to the treatment tank.

In one embodiment, the substrate is vibrated in the immersion step.

In one embodiment, the concentration of isopropyl alcohol in the diluted isopropyl alcohol is 0.3% or more and less than 5%.

Another aspect of the present invention is a substrate processing device for processing substrates. The substrate processing apparatus includes a processing tank, a chamber, a moving part, and a control part. The aforementioned treatment tank stores diluted isopropyl alcohol, and the aforementioned diluted isopropyl alcohol is diluted isopropyl alcohol. The chamber accommodates the treatment tank. The moving part moves the substrate within the chamber between a first processing position in the processing tank and a second processing position outside the second processing tank. The control unit controls the moving unit to immerse the substrate that has undergone the water-repellent treatment into the diluted isopropyl alcohol in the treatment tank. [Invention effect]

According to the substrate processing method and substrate processing device of the present invention, the cleanliness of the substrate can be improved.

Hereinafter, embodiments of the substrate processing method and substrate processing apparatus of the present invention will be described with reference to the drawings (Figs. 1 to 16). However, the present invention is not limited to the following embodiments. In addition, descriptions may be appropriately omitted for portions where repeated descriptions are given. In addition, in the drawings, the same reference numerals are attached to the same or corresponding parts, and descriptions thereof will not be repeated.

In this specification, for ease of understanding, the X direction, Y direction, and Z direction that are orthogonal to each other may be described. Typically, the X and Y directions are parallel to the horizontal direction, and the Z direction is parallel to the vertical direction. However, there is no intention to limit the direction in which the substrate processing method of the present invention is performed and the direction in which the substrate processing apparatus of the present invention is used by the definition of these directions.

The "substrate" in this embodiment can be applied to a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display device, a glass substrate for a plasma display, or a substrate for a FED (Field Emission Display). , various substrates such as optical disc substrates, magnetic disk substrates, and optical disk substrates. Although this embodiment will be described below mainly using a substrate processing method and a substrate processing apparatus used for processing a disc-shaped semiconductor wafer as an example, it can also be applied to the processing of various substrates illustrated above. In addition, various shapes can be applied to the shape of the substrate.

[Embodiment 1] Hereinafter, Embodiment 1 of the present invention will be described with reference to FIGS. 1 to 9 . First, the substrate processing apparatus 100 of this embodiment will be described with reference to FIGS. 1 and 2 . FIG. 1 is a schematic diagram showing the internal structure of the substrate processing apparatus 100 according to this embodiment. FIG. 2 is another schematic diagram showing the internal structure of the substrate processing apparatus 100 according to this embodiment. The substrate processing apparatus 100 of this embodiment is of a batch type. Therefore, the substrate processing apparatus 100 processes a plurality of substrates W collectively. Specifically, the substrate processing apparatus 100 processes a plurality of substrates W in lot units. One batch consists of, for example, 25 substrates W.

As shown in FIG. 1 , the substrate processing apparatus 100 includes a processing unit 101 . The processing unit 101 dries the substrate W. Specifically, the processing unit 101 includes the chamber 2 , the processing tank 3 , the gas supply part 4 , the liquid supply part 5 , the holding part 50 , the opening and closing part 102 , and the lifting part 103 . Hereinafter, the processing unit 101 will be described as "drying processing unit 101."

The substrate W has a pattern forming surface on which a pattern is formed. The pattern is formed on the surface of the substrate W by wet etching. Specifically, the substrate processing apparatus 100 includes a processing unit for etching the substrate W in addition to the drying processing unit 101 . The substrate W etched by the processing unit is transported (carried in) to the drying processing unit 101 .

The chamber 2 houses a processing tank 3 , a gas supply part 4 , and a liquid supply part 5 . In addition, when processing the substrate W, the holding portion 50 is accommodated in the chamber 2 . The chamber 2 has a cover 2a. The cover 2a is installed at the upper opening of the chamber 2 . The cover 2a can be opened and closed.

The treatment tank 3 stores the treatment liquid. The treatment solution includes cleaning solution and diluted IPA (diluted isopropyl alcohol). Therefore, the treatment tank 3 stores the cleaning liquid and diluted IPA. Diluted IPA means diluted IPA. In this embodiment, the cleaning liquid is DIW (deionized water; deionized water). In addition, diluted IPA is IPA diluted with DIW. In other words, diluted IPA is a mixture of IPA and DIW. In the following, diluted IPA may be described as "dIPA".

The gas supply part 4 supplies gas into the chamber 2 . Specifically, the gas supply unit 4 supplies the inert gas, the vapor of the organic solvent, and the vapor of the water-repellent agent SMT into the chamber 2 . In this embodiment, the vapor of the organic solvent is the vapor of IPA.

Specifically, the gas supply unit 4 has first to eighth nozzles 11 to 18 . The first to eighth nozzles 11 to 18 are arranged inside the chamber 2 and outside the treatment tank 3 . Specifically, the first to eighth nozzles 11 to 18 are arranged above the treatment tank 3 . As explained with reference to FIG. 2 , the first nozzle 11 to the sixth nozzle 16 eject the inert gas. In addition, the third nozzle 13 and the fourth nozzle 14 further eject the vapor of IPA. The seventh nozzle 17 and the eighth nozzle 18 spray the vapor of the water-repellent agent SMT.

The water-repellent agent SMT is, for example, a silicon-based water-repellent agent or a metal-based water-repellent agent. The silicone-based water-repellent agent makes silicon or a compound containing silicon water-repellent (hydrophobic). The metal-based water-repellent agent makes a metal or a compound containing a metal water-repellent (hydrophobic).

The silicone water-repellent agent is, for example, a silane coupling agent. Silane coupling agents include, for example, HMDS (hexamethyldisilazane; hexamethyldisilazane), TMS (tetramethylsilane; tetramethylsilane), fluorinated alkylchlorosilane (fluorinated alkylchlorosilane), alkyl disilazane (alkyl disilazane), and At least one non-chlorine hydrophobizing agent. Non-chlorine hydrophobizing agents include, for example, dimethylsilyldimethylamine (DMSDMA; dimethylsilyldimethylamine), dimethylsilyldiethylamine (DMSDEA; dimethylsilyldiethylamine), and hexamethyldisilazane (HMDS) ), tetramethyldisilazane (TMDS; tetramethyldisilazane), bis(dimethylamino)dimethylsilane (bis(dimethylamino)dimethylsilane), N,N-dimethyltrimethylsilamine (DMATMS; N , N-dimethylamino trimethylsilane), N-(trimethylsilyl)dimethylamine (N-(trimethylsilyl)dimethylamine) and at least one of organosilane (organosilane) compounds.

The metal hydrophobic agent contains, for example, at least one of an amine having a hydrophobic group and an organosilicon compound.

The water-repellent agent SMT can also be diluted with a solvent that has solubility with the hydrophilic organic solvent. The solvent system is, for example, IPA or PGMEA (propylene glycol monomethyl ether acetate; propylene glycol methyl ether acetate).

The liquid supply part 5 supplies the processing liquid to the processing tank 3 . Specifically, the liquid supply unit 5 supplies cleaning liquid (DIW) and dIPA to the treatment tank 3 . Specifically, the liquid supply part 5 has a ninth nozzle 19 and a tenth nozzle 20 . The ninth nozzle 19 and the tenth nozzle 20 are arranged in the treatment tank 3 . As explained with reference to FIG. 2 , the ninth nozzle 19 and the tenth nozzle 20 eject cleaning liquid (DIW) and dIPA.

The holding portion 50 holds a plurality of substrates W. Specifically, the holding part 50 has a plurality of holding rods 51 and a body plate 52 . In this embodiment, the holding part 50 has three holding rods 51 . The main body part 52 is a plate-shaped member extending in the vertical direction (Z direction). The holding rods 51 extend in the horizontal direction (X direction) from one surface of the main body plate 52 . The lower edge of each of the plurality of substrates W is in contact with a plurality (here, three) of holding rods 51 . The plurality of substrates W are held in an upright posture (vertical posture) in a state of being aligned in the X direction with intervals therebetween.

The opening and closing part 102 opens and closes the cover 2a. That is, the opening and closing part 102 moves the cover 2a between the open state and the closed state. By opening and closing the cover 2a, the opening in the upper part of the chamber 2 transitions between a closed state and an open state. The opening and closing part 102 has a driving source and an opening and closing mechanism. The opening and closing mechanism is driven by the driving source to open and close the cover 2a. The driving source system includes a motor, for example. The opening and closing mechanism includes, for example, a rack and pinion mechanism.

The lifting part 103 raises and lowers the holding part 50. The holding part 50 is raised and lowered by the lifting part 103, and the substrate W held by the holding part 50 is raised and lowered. The lifting part 103 has a driving source and a lifting mechanism. The driving source drives the lifting mechanism, thereby raising and lowering the holding part 50 . The driving source system includes a motor, for example. The lifting mechanism includes, for example, a rack and pinion mechanism or a ball screw.

Specifically, the lifting part 103 moves (lifts and lowers) the holding part 50 (substrate W) between the outside and the inside of the chamber 2 through the opening in the upper part of the chamber 2 . That is, the lifting unit 103 carries the substrate W into the chamber 2 and carries the substrate W out of the chamber 2 .

In addition, the lifting part 103 moves (lifts and lowers) the holding part 50 (substrate W) in the chamber 2 between the first processing position inside the processing tank 3 and the second processing position outside the processing tank 3 . The holding part 50 moves toward the first processing position, thereby moving the substrate W into the processing tank 3 . The holding part 50 moves toward the second processing position, whereby the substrate W moves toward the outside of the processing tank 3 . Specifically, the second processing position is a position above the first processing position. The holding part 50 moves toward the second processing position, whereby the substrate W moves toward the space above the processing tank 3 . The lifting part 103 is an example of a moving part. In addition, FIG. 1 shows the holding part 50 and the substrate W that have moved toward the first processing position as solid lines, and the holding part 50 and the substrate W that have moved toward the second processing position as dotted lines.

Next, the substrate processing apparatus 100 will be further described with reference to FIG. 1 . As shown in FIG. 1 , the substrate processing apparatus 100 further includes a control device 110 . The control device 110 controls the operations of each part of the substrate processing apparatus 100 . Specifically, the control device 110 includes a control unit 111 and a memory unit 112 .

The control unit 111 has a processor. The control unit 111 has, for example, a CPU (Central Processing Unit; Central Processing Unit) or an MPU (Micro Processor Unit; Micro Processing Unit). Alternatively, the control unit 111 may have a general-purpose computer.

The memory unit 112 stores data and computer programs. The data system includes recipe data. The prescription data includes information used to display multiple prescriptions (recipes). A plurality of prescriptions respectively specify processing contents and processing procedures of the substrate W.

The memory unit 112 has a main memory device. The main memory device is, for example, a semiconductor memory. The memory unit 112 may further include an auxiliary memory device. The auxiliary memory device includes, for example, at least one of a semiconductor memory and a hard disk drive. The memory unit 112 may also include removable media. The control unit 111 controls the operations of each part of the substrate processing apparatus 100 based on the computer program and data stored in the memory unit 112 .

The control device 110 (control unit 111) controls the opening and closing unit 102 so that the cover 2a transitions between the open state and the closed state. Specifically, the control device 110 (control unit 111 ) sets the lid 2 a to the open state when the substrate W is carried into the chamber 2 and when the substrate W is carried out of the chamber 2 . When the lid 2 a is in the open state, the opening in the upper part of the chamber 2 is in the open state, so that the substrate W can be loaded into the chamber 2 and the substrate W can be loaded out of the chamber 2 . The control device 110 (control unit 111) sets the cover 2a to the closed state when processing the substrate W. When the lid 2a is in the closed state, the opening in the upper part of the chamber 2 is in the closed state. As a result, the interior of the chamber 2 becomes a sealed space. The substrate W is processed in a closed space.

The control device 110 (control unit 111) controls the lifting unit 103 to raise and lower the holding unit 50 (substrate W). Specifically, when the control device 110 (control unit 111 ) carries the substrate W into the chamber 2 , the holding unit 50 is moved from the outside toward the inside of the chamber 2 through the opening in the upper part of the chamber 2 , thereby moving the substrate W into the chamber 2 . Move it into chamber 2. When unloading the substrate W out of the chamber 2 , the control device 110 (control unit 111 ) moves the holding part 50 from the inside of the chamber 2 to the outside through the opening in the upper part of the chamber 2 , thereby unloading the substrate W from the chamber 2 . The control device 110 (control unit 111) moves (raises and lowers) the holding unit 50 between the first processing position and the second processing position in the chamber 2 when processing the substrate W.

Next, the substrate processing apparatus 100 will be further described with reference to FIG. 2 . As shown in FIG. 2 , the substrate processing apparatus 100 further includes an inert gas supply source 21 , an IPA supply source 22 , a water-repellent agent supply source 23 , a DIW supply source 24 , a pressure reducing unit 25 , and first to seventh pipes 31 to 7 . 37. Drainage line 41, exhaust line 42, first to eighth valves V1 to V8, first heater H1 and second heater H2.

The inert gas supply source 21 supplies inert gas. The inert gas system is nitrogen, for example. The IPA supply source 22 supplies IPA. The water-repellent agent supply source 23 supplies the water-repellent agent SMT. The DIW supply source 24 supplies DIW.

The inert gas is supplied to the first pipe 31 from the inert gas supply source 21 . The first pipe 31 circulates the inert gas supplied from the inert gas supply source 21 to the first nozzle 11 and the second nozzle 12 .

The first nozzle 11 and the second nozzle 12 are hollow tubular members. A plurality of ejection holes are formed in the first nozzle 11 and the second nozzle 12 respectively. In this embodiment, the first nozzle 11 and the second nozzle 12 extend in the X direction. The plurality of ejection holes of the first nozzle 11 are formed at equal intervals in the X direction. Similarly, the plurality of ejection holes of the second nozzle 12 are formed at equal intervals in the X direction.

When the inert gas is supplied to the first nozzle 11 via the first pipe 31 , the inert gas is ejected from the plurality of ejection holes of the first nozzle 11 into the chamber 2 . Similarly, when the inert gas is supplied to the second nozzle 12 via the first pipe 31 , the inert gas is ejected from the plurality of ejection holes of the second nozzle 12 into the chamber 2 .

The first valve V1 is interposed between the first pipe 31 . The first valve V1 is an on-off valve for opening and closing the flow path of the first pipe 31 . The first valve V1 controls the flow of the inert gas flowing through the first pipe 31 . Specifically, when the first valve V1 is opened, the inert gas system flows to the first nozzle 11 and the second nozzle 12 via the first pipe 31 . As a result, the inert gas is ejected from the first nozzle 11 and the second nozzle 12 . When the first valve V1 is closed, the flow of the inert gas is blocked, and the injection of the inert gas from the first nozzle 11 and the second nozzle 12 is stopped.

The first valve V1 also functions as an adjustment valve for adjusting the flow rate of the inert gas flowing through the first pipe 31 . The first valve V1 is, for example, a solenoid valve. The first valve V1 is controlled by the control device 110 (control unit 111).

IPA is supplied from the IPA supply source 22 to the second pipe 32 . The first heater H1 is interposed between the second pipe 32 . The first heater H1 heats the IPA to vaporize the IPA. That is, the first heater H1 generates the vapor of IPA. The second pipe 32 circulates the IPA vapor to the third nozzle 13 and the fourth nozzle 14 .

The third nozzle 13 and the fourth nozzle 14 are arranged below the first nozzle 11 and the second nozzle 12 . The third nozzle 13 and the fourth nozzle 14 have the same configuration as the first nozzle 11 and the second nozzle 12 . Like the first nozzle 11 and the second nozzle 12 , the third nozzle 13 and the fourth nozzle 14 spray the vapor of IPA into the inside of the chamber 2 .

The second valve V2 is interposed between the second pipe 32 . The second valve V2 is an on-off valve for opening and closing the flow path of the second pipe 32 . The second valve V2 is provided downstream of the first heater H1 with respect to the second pipe 32 . Like the first valve V1, the second valve V2 controls the flow of the IPA vapor flowing through the second pipe 32. The second valve V2 can also function as an adjustment valve to adjust the flow rate of the IPA vapor flowing in the second pipe 32 . The second valve V2 is, for example, a solenoid valve. The second valve V2 is controlled by the control device 110 (control unit 111).

The inert gas is supplied from the inert gas supply source 21 to the third pipe 33 . The third pipe 33 is connected to the second pipe 32 . That is, the third pipe 33 allows the inert gas to flow to the second pipe 32 .

A third valve V3 is provided between the third pipe 33 . The third valve V3 is an on-off valve for opening and closing the flow path of the third pipe 33 . Like the first valve V1, the third valve V3 controls the flow of the inert gas flowing through the third pipe 33. The third valve V3 can also function as an adjustment valve to adjust the flow rate of the inert gas flowing in the third pipe 33 . The third valve V3 is, for example, a solenoid valve. The third valve V3 is controlled by the control device 110 (control unit 111).

When causing the third nozzle 13 and the fourth nozzle 14 to eject the vapor of IPA, the control device 110 (control unit 111) opens the second valve V2 and closes the third valve V3. On the other hand, the control device 110 (control unit 111) closes the second valve V2 and opens the third valve V3 when causing the third nozzle 13 and the fourth nozzle 14 to eject the inert gas. When the third valve V3 is opened, the inert gas system flows from the third pipe 33 to the second pipe 32 , and the inert gas is supplied to the third nozzle 13 and the fourth nozzle 14 through the second pipe 32 . As a result, the inert gas is sprayed into the chamber 2 from the third nozzle 13 and the fourth nozzle 14 .

The inert gas is supplied to the fourth pipe 34 from the inert gas supply source 21 . The fourth pipe 34 circulates the inert gas supplied from the inert gas supply source 21 to the fifth nozzle 15 and the sixth nozzle 16 .

The fifth nozzle 15 and the sixth nozzle 16 are arranged below the third nozzle 13 and the fourth nozzle 14 . The fifth nozzle 15 and the sixth nozzle 16 have the same configuration as the first nozzle 11 and the second nozzle 12 . Like the first nozzle 11 and the second nozzle 12 , the fifth nozzle 15 and the sixth nozzle 16 inject the inert gas into the chamber 2 .

The fourth valve V4 is interposed between the fourth pipe 34 . The fourth valve V4 is an on-off valve for opening and closing the flow path of the fourth pipe 34 . Like the first valve V1, the fourth valve V4 controls the flow of the inert gas flowing through the fourth pipe 34. The fourth valve V4 also functions as an adjustment valve to adjust the flow rate of the inert gas flowing through the fourth pipe 34 . The fourth valve V4 is, for example, a solenoid valve. The fourth valve V4 is controlled by the control device 110 (control unit 111).

The water-repellent agent SMT is supplied to the fifth pipe 35 from the water-repellent agent supply source 23 . The second heater H2 is provided between the fifth pipe 35 . The second heater H2 heats the water-repellent agent SMT to vaporize the water-repellent agent SMT. That is, the second heater H2 generates the vapor of the water-repellent agent SMT. The fifth pipe 35 circulates the water-repellent agent SMT to the seventh nozzle 17 and the eighth nozzle 18 .

The seventh nozzle 17 and the eighth nozzle 18 are arranged below the fifth nozzle 15 and the sixth nozzle 16 . The seventh nozzle 17 and the eighth nozzle 18 have the same configuration as the first nozzle 11 and the second nozzle 12 . Like the first nozzle 11 and the second nozzle 12 , the seventh nozzle 17 and the eighth nozzle 18 spray the vapor of the water-repellent agent SMT into the chamber 2 .

A fifth valve V5 is provided between the fifth pipe 35 . The fifth valve V5 is an on-off valve for opening and closing the flow path of the fifth pipe 35 . The fifth valve V5 is provided downstream of the second heater H2 with respect to the fifth pipe 35 . Like the first valve V1 , the fifth valve V5 controls the flow of the vapor of the water-repellent agent SMT flowing through the fifth pipe 35 . The fifth valve V5 also functions as an adjustment valve for adjusting the flow rate of the vapor of the water-repellent agent SMT flowing through the fifth pipe 35 . The fifth valve V5 is, for example, a solenoid valve. The fifth valve V5 is controlled by the control device 110 (control unit 111).

DIW is supplied from the DIW supply source 24 to the sixth pipe 36 . The sixth pipe 36 circulates the DIW supplied from the DIW supply source 24 to the ninth nozzle 19 and the tenth nozzle 20 .

The ninth nozzle 19 and the tenth nozzle 20 have the same configuration as the first nozzle 11 and the second nozzle 12 . DIW is supplied to the ninth nozzle 19 and the tenth nozzle 20 via the sixth pipe 36 , thereby ejecting DIW from the ninth nozzle 19 and the tenth nozzle 20 into the treatment tank 3 .

A sixth valve V6 is provided between the sixth pipe 36 . The sixth valve V6 is an on-off valve for opening and closing the flow path of the sixth pipe 36 . Like the first valve V1, the sixth valve V6 controls the flow of DIW flowing through the sixth pipe 36. The sixth valve V6 also functions as an adjustment valve to adjust the flow rate of the DIW flowing through the sixth pipe 36 . The sixth valve V6 is, for example, a solenoid valve. The sixth valve V6 is controlled by the control device 110 (control unit 111).

IPA is supplied from the IPA supply source 22 to the seventh pipe 37 . The seventh pipe 37 is connected to the sixth pipe 36 . That is, the seventh pipe 37 circulates IPA to the sixth pipe 36 .

A seventh valve V7 is provided between the seventh pipe 37 . The seventh valve V7 is an on-off valve for opening and closing the flow path of the seventh pipe 37 . Like the first valve V1, the seventh valve V7 controls the flow of IPA flowing through the seventh pipe 37. The seventh valve V7 also functions as an adjustment valve to adjust the flow rate of IPA flowing through the seventh pipe 37 . The seventh valve V7 is, for example, a solenoid valve. The seventh valve V7 is controlled by the control device 110 (control unit 111).

When storing DIW in the processing tank 3, the control device 110 (control unit 111) opens the sixth valve V6 and closes the seventh valve V7. Thereby, DIW is sprayed from the ninth nozzle 19 and the tenth nozzle 20 into the treatment tank 3 .

On the other hand, when storing dIPA in the treatment tank 3, the control device 110 (control unit 111) opens the sixth valve V6 and the seventh valve V7. When the sixth valve V6 and the seventh valve V7 are opened, IPA flows from the seventh pipe 37 to the sixth pipe 36 and the IPA merges with the DIW flowing in the sixth pipe 36 , thereby generating dIPA in the sixth pipe 36 . dIPA is supplied to the ninth nozzle 19 and the tenth nozzle 20 via the sixth pipe 36 . As a result, dIPA is sprayed from the ninth nozzle 19 and the tenth nozzle 20 into the treatment tank 3 .

Furthermore, the control device 110 (control unit 111) adjusts the opening degrees of the sixth valve V6 and the seventh valve V7 so that the concentration of IPA in dIPA becomes a predetermined concentration. The predetermined concentration is 0.3% or more and less than 5%.

The drain line 41 is connected to the bottom of the treatment tank 3 . An eighth valve V8 is provided in the drain line 41 . The eighth valve V8 is an opening and closing valve for opening and closing the flow path of the drain line 41 . The eighth valve V8 is, for example, a solenoid valve. The eighth valve V8 is controlled by the control device 110 (control unit 111). The control device 110 (control unit 111 ) closes the eighth valve V8 when the processing liquid is stored in the processing tank 3 . On the other hand, the control device 110 (control unit 111 ) opens the eighth valve V8 when discharging the processing liquid from the processing tank 3 . When the eighth valve V8 is opened, the processing liquid stored in the processing tank 3 is discharged from the processing tank 3 to the outside of the chamber 2 through the drain line 41 .

The pressure reducing part 25 reduces the pressure in the chamber 2 . That is, the depressurizing part 25 depressurizes the inside of the chamber 2 . The pressure reducing unit 25 includes, for example, an exhaust pump. The exhaust pump is, for example, a vacuum pump. The pressure reducing unit 25 is controlled by the control device 110 (control unit 111). Specifically, the pressure reducing part 25 is connected to the chamber 2 via the exhaust line 42 . The pressure reducing part 25 exhausts the gas in the chamber 2 when the lid 2a is in a closed state, and reduces the pressure in the chamber 2 to less than atmospheric pressure.

Next, the substrate processing apparatus 100 and the substrate processing method of this embodiment will be described with reference to FIGS. 1 to 9 . The substrate processing method of this embodiment is executed by the substrate processing apparatus 100 illustrated in FIGS. 1 and 2 . 3 to 9 are flowcharts showing the substrate processing method of this embodiment. In detail, FIGS. 3 to 9 show the processing sequence executed by the substrate processing apparatus 100 . As shown in FIGS. 3 to 9 , the substrate processing method (processing sequence) of this embodiment includes steps S1 to S21.

First, as shown in FIG. 3 , in step S1 , the control device 110 (control unit 111 ) moves the holding unit 50 toward the first processing position, and immerses the substrate W carried into the chamber 2 in the process water stored therein. DIW for slot 3.

The substrate W after the etching process (after the wet etching process) is carried into the chamber 2 . The etched substrate W is immersed in DIW, whereby the etching liquid adhering to the surface of the substrate W is washed by DIW.

In this embodiment, in step S1, the control device 110 (control unit 111) ejects DIW from the ninth nozzle 19 and the tenth nozzle 20 (liquid supply unit 5). Thereby, the etching liquid is further washed.

Furthermore, in step S1, the control device 110 (control unit 111) causes the third nozzle 13 and the fourth nozzle 14 to eject the inert gas. For example, the control device 110 (control unit 111) starts ejecting the inert gas after immersing the substrate W in DIW. In addition, the pressure reducing part 25 is not driven at this time. Therefore, the internal pressure of the chamber 2 becomes atmospheric pressure.

Next, in step S2, the control device 110 (control unit 111) continues to eject the inert gas. Furthermore, in step S2, the control device 110 (control unit 111) causes the ninth nozzle 19 and the tenth nozzle 20 (liquid supply unit 5) to stop ejecting DIW. In addition, the pressure reducing part 25 is not driven at this time. Therefore, the internal pressure of the chamber 2 becomes atmospheric pressure.

Next, in step S3, the control device 110 (control unit 111) continues to eject the inert gas. Furthermore, in step S3 , the control device 110 (control unit 111 ) drives the pressure reducing unit 25 to exhaust the gas in the chamber 2 through the exhaust line 42 . As a result, the pressure in the chamber 2 is reduced to less than atmospheric pressure. In addition, the substrate W is immersed in DIW at this time. Therefore, pattern collapse caused by drying of the substrate W can be avoided.

Next, as shown in FIG. 4 , in step S4 , the control device 110 (control unit 111 ) continues to depressurize the chamber 2 . The pressure reduction in the chamber 2 continues until step S12 (Fig. 6). Furthermore, in step S4, the control device 110 (control unit 111) causes the third nozzle 13 and the fourth nozzle 14 to eject the vapor of IPA. As a result, an atmosphere containing vapor of IPA is formed in the chamber 2 . In addition, the ejection of the vapor of IPA continues until step S7 (Fig. 7).

Next, in step S5, the control device 110 (control unit 111) moves the holding unit 50 toward the second processing position to pick up the substrate W from the DIW. As a result, the water droplets (DIW droplets) adhering to the substrate W are removed by the vapor of IPA. More specifically, the water droplets adhering to the substrate W are replaced with IPA droplets.

Furthermore, in step S5, the control device 110 (control unit 111) opens the eighth valve V8 to discharge DIW from the treatment tank 3 through the drain line 41. In addition, the open state of the eighth valve V8 is maintained until step S13 (Fig. 7).

According to this embodiment, in step S5, the water droplets can be replaced with IPA droplets in a reduced pressure state. Therefore, replacement of water droplets with IPA droplets can be performed in a shorter time than in the case of performing the process under atmospheric pressure.

Next, in step S6 , the control device 110 (control unit 111 ) moves the holding unit 50 toward the first processing position, thereby moving the substrate W into the processing tank 3 . At this time, no DIW remains in the treatment tank 3 .

Next, as shown in FIG. 5 , in step S7 , the control device 110 (control unit 111 ) moves the holding unit 50 toward the second processing position to lift up the substrate W from the processing tank 3 . Furthermore, in step S7, the control device 110 (control unit 111) causes the seventh nozzle 17 and the eighth nozzle 18 to eject the vapor of the water-repellent agent SMT. In addition, the vapor of IPA and the vapor of the water-repellent agent SMT are sprayed in step S7 in order to suppress the pressure fluctuation in the chamber 2 .

Next, in step S8, the control device 110 (control unit 111) continues to eject the vapor of the water-repellent agent SMT. Furthermore, in step S8, the control device 110 (control unit 111) stops ejecting the vapor of IPA. As a result, the droplets of IPA attached to the substrate W are replaced by droplets of the water-repellent agent SMT, and a water-repellent protective film is formed on the surface of the substrate W. Therefore, the pattern formed on the substrate W is covered with a water-repellent protective film (water-repellent treatment). By covering the pattern with a water-repellent protective film, the pattern can be prevented from collapsing.

Next, in step S9, the control device 110 (control unit 111) causes the third nozzle 13 and the fourth nozzle 14 to eject the vapor of IPA. Furthermore, in step S9, the control device 110 (control unit 111) continues to eject the vapor of the water-repellent agent SMT. In step S9, the vapor of IPA and the vapor of the water-repellent agent SMT are sprayed in order to suppress the pressure change in the chamber 2.

Next, as shown in FIG. 6 , in step S10 , the control device 110 (control unit 111 ) stops ejecting the vapor of the water-repellent agent SMT. Furthermore, in step S10, the control device 110 (control unit 111) continues to discharge the vapor of IPA. As a result, the residue of the water-repellent agent SMT adhered to the substrate W is removed by the vapor of IPA. More specifically, the residues of the water-repellent agent SMT adhered to the substrate W are replaced with droplets of IPA.

Next, in step S11, the control device 110 (control unit 111) causes the third nozzle 13 and the fourth nozzle 14 to eject the inert gas.

Next, in step S12, the control device 110 (control unit 111) causes the third nozzle 13 and the fourth nozzle 14 to continuously eject the inert gas, and causes the first nozzle 11, the second nozzle 12, the fifth nozzle 15 and the sixth nozzle 15 to continue ejecting the inert gas. Nozzle 16 also sprays inert gas. As a result, the substrate W is dried. In this embodiment, the substrate W is dried under reduced pressure. Compared with drying the substrate W under an atmospheric pressure state, drying efficiency can be improved by drying the substrate W under a reduced pressure state. That is, the time required for drying the substrate W can be shortened.

Next, as shown in FIG. 7 , in step S13 , the control device 110 (control unit 111 ) continues to cause the first to sixth nozzles 11 to 16 to eject the inert gas and stops driving the pressure reducing unit 25 . As a result, the internal pressure of the chamber 2 returns to atmospheric pressure.

Next, in step S14, the control device 110 (control unit 111) causes the first nozzle 11, the second nozzle 12, the fifth nozzle 15, and the sixth nozzle 16 to stop ejecting the inert gas, while causing the third nozzle 13 and the sixth nozzle 16 to stop ejecting the inert gas. The fourth nozzle 14 continues to spray the inert gas.

Furthermore, in step S14 , the control device 110 (control unit 111 ) causes the ninth nozzle 19 and the tenth nozzle 20 to eject dIPA and accumulate the dIPA in the treatment tank 3 after closing the eighth valve V8 . At this time, the internal pressure of the chamber 2 becomes atmospheric pressure. Therefore, dIPA can be easily stored in the treatment tank 3 .

Next, in step S15, the control device 110 (control unit 111) stops ejecting dIPA. Furthermore, in step S15 , the control device 110 (control unit 111 ) moves the holding unit 50 toward the first processing position to immerse the substrate W in dIPA stored in the processing tank 3 (immersion step). As a result, the particles generated due to the reaction between the residue of the water-repellent agent SMT attached to the substrate W and IPA are removed by dIPA. Specifically, the microparticles produced by the reaction between the water-repellent agent SMT and IPA are dissolved in the water contained in dIPA.

Furthermore, in step S15, the control device 110 (control unit 111) continues to eject the inert gas, while driving the pressure reducing unit 25 to exhaust the gas in the chamber 2 through the exhaust line 42. As a result, the pressure in the chamber 2 is reduced to less than atmospheric pressure. The pressure reduction in the chamber 2 continues until step S19 (Fig. 9).

In addition, in step S15, the control device 110 (control unit 111) may continue to eject dIPA. By continuously spraying dIPA, particles produced by the reaction between the water-repellent agent SMT and IPA can be further removed.

In addition, in step S15, the control device 110 (control unit 111) may swing (vibrate) the holding unit 50 in the up and down direction while maintaining the state in which the substrate W is immersed in dIPA. In this way, the particles produced by the reaction of the water-repellent agent SMT and IPA can be further removed.

Next, as shown in FIG. 8 , in step S16 , the control device 110 (control unit 111 ) causes the third nozzle 13 and the fourth nozzle 14 to eject the vapor of IPA. As a result, an atmosphere containing vapor of IPA is formed in the chamber 2 .

Next, in step S17, the control device 110 (control unit 111) moves the holding unit 50 toward the second processing position to lift the substrate W from the dIPA (lifting step). As a result, the dIPA droplets attached to the substrate W are removed by the vapor of IPA. More specifically, the droplets of dIPA attached to the substrate W are replaced by the droplets of IPA.

Furthermore, in step S17, the control device 110 (control unit 111) opens the eighth valve V8 to discharge dIPA from the treatment tank 3 through the drain line 41. In addition, the open state of the eighth valve V8 is maintained until step S21 (Fig. 9).

According to this embodiment, in step S17, the liquid droplets of dIPA can be replaced with the liquid droplets of IPA in a reduced pressure state. Therefore, the replacement of the droplets of dIPA with the droplets of IPA can be performed in a shorter time than in the case of performing the process under atmospheric pressure.

Next, in step S18, the control device 110 (control unit 111) causes the third nozzle 13 and the fourth nozzle 14 to eject the inert gas.

Next, as shown in FIG. 9 , in step S19 , the control device 110 (control unit 111 ) continues to cause the third nozzle 13 and the fourth nozzle 14 to eject the inert gas, and also causes the first nozzle 11 , the second nozzle 12 , The fifth nozzle 15 and the sixth nozzle 16 eject inert gas (drying process). As a result, the substrate W is dried.

In this embodiment, the substrate W is dried under reduced pressure. Compared with drying the substrate W under an atmospheric pressure state, drying efficiency can be improved by drying the substrate W under a reduced pressure state.

Next, in step S20 , the control device 110 (control unit 111 ) continues to spray the inert gas from the first nozzle 11 to the sixth nozzle 16 and stops driving the pressure reducing unit 25 . As a result, the internal pressure of the chamber 2 returns to atmospheric pressure.

Next, in step S21, the control device 110 (control unit 111) causes the first nozzle 11, the second nozzle 12, the fifth nozzle 15, and the sixth nozzle 16 to stop ejecting the inert gas, while causing the third nozzle 13 to stop ejecting the inert gas. And the fourth nozzle 14 continues to spray the inert gas. At this time, the internal pressure of the chamber 2 becomes atmospheric pressure.

The first embodiment of the present invention has been described above with reference to FIGS. 1 to 9 . According to this embodiment, particles generated due to the reaction between the residue of the water-repellent agent SMT attached to the substrate W and IPA can be removed by dIPA. Therefore, the cleanliness of the substrate W can be improved.

Furthermore, according to this embodiment, the water droplets adhering to the surface of the substrate W can be replaced with the droplets of IPA before the vapor of the water-repellent agent SMT is ejected. Therefore, compared with the case where water droplets adhere to the surface of the substrate W, the droplets of the water-repellent agent SMT can be easily adhered to the surface of the substrate W.

Furthermore, according to this embodiment, the droplets of dIPA attached to the surface of the substrate W can be replaced by the droplets of IPA before the drying process (step S19). Since the surface tension of IPA is smaller than that of dIPA, the surface tension of the liquid acting on the pattern during the drying process becomes smaller, which can further prevent the collapse of the pattern.

Furthermore, according to this embodiment, the vapor of the water-repellent agent SMT can be ejected under reduced pressure to form a water-repellent film on the surface of the substrate W. Therefore, compared with the case where the vapor of the water-repellent agent SMT is sprayed under atmospheric pressure to form a water-repellent film on the surface of the substrate W, the water-repellent film can be formed more easily.

[Embodiment 2] Next, Embodiment 2 of the present invention will be described with reference to FIGS. 1 , 2 to 7 , 10 and 11 . However, matters that are different from Embodiment 1 will be described, and description of matters that are the same as Embodiment 1 will be omitted. The difference between Embodiment 2 and Embodiment 1 is that the processing after the cleaning process by dIPA is performed under atmospheric pressure.

10 and 11 are flowcharts showing the substrate processing method of this embodiment. Specifically, FIG. 10 and FIG. 11 show the processing sequence executed by the substrate processing apparatus 100 . The substrate processing method (processing sequence) of this embodiment includes steps S1 to S14 described with reference to FIGS. 3 to 7 . As shown in FIGS. 10 and 11 , the substrate processing method of this embodiment further includes steps S31 to S36.

In this embodiment, first, the control device 110 (control unit 111) executes the processes from step S1 to step S14 described in the first embodiment. Thereafter, as shown in FIG. 10 , the control device 110 (control unit 111) stops ejecting dIPA in step S31. Furthermore, in step S31 , the control device 110 (control unit 111 ) moves the holding unit 50 toward the first processing position to immerse the substrate W in dIPA stored in the processing tank 3 (immersion step). As a result, the particles generated by the reaction between the residue of the water-repellent agent SMT attached to the substrate W and IPA can be removed by dIPA.

In addition, in step S31, similarly to step S15, the control device 110 (control unit 111) continues to eject the inert gas. On the other hand, unlike step S15, the control device 110 (control unit 111) does not drive the pressure reducing unit 25. Therefore, the internal pressure of the chamber 2 is maintained at atmospheric pressure. Until step 34 (Fig. 11), the internal pressure of the chamber 2 is maintained at atmospheric pressure.

In addition, in step S31, similarly to step S15, the control device 110 (control unit 111) continues to eject dIPA. In step S31 , similarly to step S15 , the control device 110 (control unit 111 ) may swing (vibrate) the holding unit 50 in the up and down direction while maintaining the state in which the substrate W is immersed in dIPA.

Next, in step S32, the control device 110 (control unit 111) causes the third nozzle 13 and the fourth nozzle 14 to eject the vapor of IPA. As a result, an atmosphere containing vapor of IPA is formed in the chamber 2 .

Next, in step S33, the control device 110 (control unit 111) moves the holding unit 50 toward the second processing position to lift up the substrate W from the dIPA (lifting step). Furthermore, in step S33, the control device 110 (control unit 111) opens the eighth valve V8 to discharge dIPA from the treatment tank 3 through the drain line 41. In addition, the open state of the eighth valve V8 is maintained until step S36 (Fig. 11).

Next, as shown in FIG. 11 , in step S34 , the control device 110 (control unit 111 ) continues to eject the vapor of IPA. As a result, the dIPA droplets attached to the substrate W are removed by the vapor of IPA.

Next, in step S35 , the control device 110 (control unit 111 ) drives the pressure reducing unit 25 to exhaust the gas in the chamber 2 through the exhaust line 42 . As a result, the pressure in the chamber 2 is reduced to less than atmospheric pressure. Furthermore, in step S35, the control device 110 (control unit 111) causes the third nozzle 13 and the fourth nozzle 14 to eject the inert gas, thereby drying the substrate W (drying step).

In this embodiment, the substrate W is dried under reduced pressure. Compared with drying the substrate W under an atmospheric pressure state, drying efficiency can be improved by drying the substrate W under a reduced pressure state.

Next, in step S36, the control device 110 (control unit 111) causes the third nozzle 13 and the fourth nozzle 14 to continuously eject the inert gas, and also causes the first nozzle 11, the second nozzle 12, the fifth nozzle 15 and the third nozzle 15 to continuously eject the inert gas. Six nozzles 16 eject inert gas. Furthermore, in step S36, the control device 110 (control unit 111) stops driving the pressure reducing unit 25. As a result, the internal pressure of the chamber 2 returns to atmospheric pressure.

According to this embodiment, by causing the first nozzle 11 to the sixth nozzle 16 to eject the inert gas, the internal pressure of the chamber 2 can be efficiently returned to the atmospheric pressure.

As above, the second embodiment of the present invention has been described with reference to FIG. 1 , FIG. 2 to FIG. 7 , FIG. 10 and FIG. 11 . According to this embodiment, particles generated due to the reaction between the residue of the water-repellent agent SMT attached to the substrate W and IPA can be removed by dIPA. Therefore, the cleanliness of the substrate W can be improved.

[Embodiment 3] Next, Embodiment 3 of the present invention will be described with reference to FIGS. 1, 2, and 10 to 15. However, matters different from Embodiment 1 and Embodiment 2 will be described, and description of matters that are the same as Embodiment 1 and Embodiment 2 will be omitted. Unlike Embodiment 1 and Embodiment 2, Embodiment 3 performs processing under atmospheric pressure.

12 to 15 are flowcharts showing the substrate processing method of this embodiment. In detail, FIGS. 12 to 15 show the processing sequence executed by the substrate processing apparatus 100 . As shown in FIGS. 12 to 15 , the substrate processing method (processing sequence) of this embodiment includes steps S41 to S52. In addition, the substrate processing method of this embodiment further includes steps S33 to S36 described with reference to FIGS. 10 and 11 .

First, as shown in FIG. 12 , in steps S41 and S42 , the control device 110 (control unit 111 ) performs the same processing as steps S1 and S2 described in the first embodiment. Since the processes of steps S41 and S42 are the same as steps S1 and S2 described in Embodiment 1, description thereof will be omitted.

Next, in step S43, similarly to step S3 described in Embodiment 1, the control device 110 (control unit 111) continues to cause the third nozzle 13 and the fourth nozzle 14 to eject the inert gas. On the other hand, in step S43, unlike step S3 described in the first embodiment, the control device 110 (control unit 111) does not drive the pressure reducing unit 25. Therefore, the internal pressure of the chamber 2 is maintained at atmospheric pressure. Until step S52 (Fig. 15), the internal pressure of the chamber 2 is maintained at atmospheric pressure.

Next, as shown in FIG. 13 , in steps S44 and S45 , the control device 110 (control unit 111 ) performs the same processing as steps S4 and S5 described in the first embodiment. Since the processes of steps S44 and S45 are the same as steps S4 and S5 described in Embodiment 1 except that they are performed under atmospheric pressure, description thereof will be omitted. Furthermore, the control device 110 (control unit 111) opens the eighth valve V8 in step S45 to discharge the DIW from the treatment tank 3 through the drain line 41. The open state of the eighth valve V8 is maintained until step S50 (Fig. 15).

Next, in step S46, the control device 110 (control unit 111) continues to eject the vapor of IPA and maintains the position of the holding unit 50 at the second processing position. As a result, the water droplets (DIW droplets) adhering to the substrate W are removed by the vapor of IPA. More specifically, the water droplets adhering to the substrate W are replaced with IPA droplets.

Next, as shown in FIG. 14 , in steps S47 to S49 , the control device 110 (control unit 111 ) performs the same processing as steps S7 to S9 described in the first embodiment. The processes from steps S47 to S49 are the same as steps S7 to S9 described in Embodiment 1 except that they are performed under atmospheric pressure, and therefore the description thereof is omitted.

Next, as shown in FIG. 15 , in step S50 , the control device 110 (control unit 111 ) performs the same process as step S10 described in the first embodiment. The process of step S50 is the same as step S10 described in Embodiment 1 except that it is performed under atmospheric pressure, so the description is omitted.

Next, in step S51, the control device 110 (control unit 111) continues to discharge the vapor of IPA. Furthermore, in step S51 , the control device 110 (control unit 111 ) closes the eighth valve V8 and causes the ninth nozzle 19 and the tenth nozzle 20 to eject dIPA and store the dIPA in the treatment tank 3 . At this time, the internal pressure of the chamber 2 becomes atmospheric pressure. Therefore, dIPA can be easily stored in the treatment tank 3 .

Next, in step S52, the control device 110 (control unit 111) stops ejecting dIPA. Furthermore, in step S52, the control device 110 (control unit 111) moves the holding unit 50 toward the first processing position to immerse the substrate W in dIPA stored in the processing tank 3 (immersion step). As a result, the particles generated due to the reaction between the residue of the water-repellent agent SMT attached to the substrate W and IPA are removed by dIPA. Furthermore, in step S52, the control device 110 (control unit 111) continues to discharge the vapor of IPA.

Thereafter, the control device 110 (control unit 111) executes the processing from step S33 to step S36 described in the second embodiment.

In addition, in step S52, similarly to step S15, the control device 110 (control unit 111) continues to eject dIPA. In addition, in step S52, similarly to step S15, the control device 110 (control unit 111) may swing (vibrate) the holding unit 50 in the up and down direction while maintaining the state of the substrate W being immersed in dIPA.

The third embodiment of the present invention has been described above with reference to FIGS. 1, 2 and 10 to 15. According to this embodiment, the cleanliness of the substrate W can be improved similarly to the first and second embodiments. In addition, according to this embodiment, since the internal pressure of the chamber 2 is maintained at atmospheric pressure, there is no need to dry after removing the residue of the water-repellent agent SMT adhered to the substrate W by the vapor of IPA (after step S50). The process (Step S11 to Step S13 described in Embodiment 1) can supply dIPA into the treatment tank 3 .

The embodiments of the present invention have been described above with reference to the drawings (Figs. 1 to 15). However, the present invention is not limited to the above-described embodiments, and can be implemented in various aspects without departing from the spirit of the present invention. In addition, the plurality of components disclosed in the above-mentioned embodiments can be appropriately changed. For example, one of all the constituent elements shown in one embodiment may be added to the constituent elements of another embodiment, or some one of all the constituent elements shown in one embodiment may be added. Several components are deleted from the implementation form.

In order to easily understand the present invention, the drawings mainly and schematically show each component, and the thickness, length, number, spacing, etc. of each component shown in the drawings may also differ from the drawings due to the relationship between the drawings. The actual situation is different. In addition, the configuration of each component shown in the above-mentioned embodiment is an example and is not particularly limited. Various changes can be made within the scope that does not substantially depart from the effects of the present invention.

For example, in the embodiment described with reference to FIGS. 1 to 15 , the cleaning process of the etching liquid represented by DIW is performed in the processing tank 3 of the drying process unit 101 . However, the cleaning process of the etching liquid represented by DIW may also be performed in the same manner as the drying process. The processing unit 101 is performed in the processing tanks of different processing units. For example, the cleaning process of the etching liquid used by DIW can also be performed in the processing tank of the processing unit used to etch the substrate W.

In addition, in the embodiment described with reference to FIGS. 1 to 15 , the water-repellent treatment is performed in the chamber 2 of the drying processing unit 101 . However, the water-repelling processing may also be performed in a processing unit different from the drying processing unit 101 . performed in the chamber.

In addition, in the embodiment described with reference to FIGS. 1 to 15 , the substrate W is oscillated (vibrated) in the up and down direction when the substrate W is immersed in dIPA. However, the direction in which the substrate W is oscillated (vibrated) is not limited to the up and down direction. direction. Even if the substrate W is oscillated (vibrated) in any direction, the removal of particles can be promoted. For example, when the substrate W is immersed in dIPA, the substrate W may be oscillated (vibrated) in the lateral direction.

In addition, in the embodiment described with reference to FIGS. 1 to 15 , the vaporized water-repellent agent SMT is used to make the substrate W water-repellent. However, the liquid water-repellent agent SMT may be stored in the treatment tank. 3. The substrate W is immersed in the water-repellent agent SMT in the treatment tank 3.

In addition, in the embodiment (third embodiment) described with reference to FIGS. 1 , 2 , and 10 to 15 , the processes from steps S33 to S36 described in the second embodiment are executed after step S52 . The processing after step S52 can be performed in a reduced pressure state as shown in FIG. 16 . Hereinafter, other embodiments of the present invention will be described with reference to FIG. 16 .

FIG. 16 is a flowchart showing a substrate processing method according to another embodiment of the present invention. The substrate processing method (processing sequence) of this embodiment includes steps S41 to S52 described with reference to FIGS. 12 to 15 . In addition, as shown in FIG. 16 , the substrate processing method of this embodiment further includes step S61 after step S52. In addition, the substrate processing method of this embodiment further includes steps S17 to S21 described with reference to FIGS. 8 and 9 .

As shown in FIG. 16 , the control device 110 (control unit 111 ) may continue to eject the vapor of IPA in step S61 after executing the processes from step S41 to step S52 described in the third embodiment. The gas in the chamber 2 is exhausted through the exhaust line 42 by driving the decompression unit 25 . As a result, the pressure in the chamber 2 is reduced to less than atmospheric pressure. In other embodiments, after step S61, the processes from step S17 to step 21 described in the first embodiment are executed. [Industrial Availability]

The present invention can be applied to methods and devices for processing substrates.

2: Chamber 2a: cover 3: Processing tank 4:Gas supply department 5:Liquid supply department 11:First nozzle 12:Second nozzle 13:The third nozzle 14:The fourth nozzle 15:The fifth nozzle 16:Sixth nozzle 17:The seventh nozzle 18:The eighth nozzle 19:Ninth nozzle 20:The tenth nozzle 21: Inert gas supply source 22:IPA supply source 23: Water repellent agent supply source 24:DIW supply source 25:Decompression Department 31:First piping 32:Second piping 33:Third piping 34:Fourth piping 35:Fifth piping 36:Sixth piping 37:Seventh piping 41: Drainage line 42:Exhaust pipe 50:Maintenance Department 51:keep the stick 52:Body board 100:Substrate processing device 101: Processing unit (drying processing unit) 102: Opening and closing part 103:Lifting part 110:Control device 111:Control Department 112:Memory Department H1: first heater H2: Second heater S1 to S21, S31 to S36, S41 to S52, S61: steps SMT: water repellent agent V1: first valve V2: Second valve V3: The third valve V4: fourth valve V5: fifth valve V6: The sixth valve V7: seventh valve V8: eighth valve W: substrate

[Fig. 1] is a schematic diagram showing the internal structure of the substrate processing apparatus according to Embodiment 1 of the present invention. FIG. 2 is another schematic diagram showing the internal structure of the substrate processing apparatus according to Embodiment 1 of the present invention. [Fig. 3] is a flowchart showing a substrate processing method according to Embodiment 1 of the present invention. [Fig. 4] is a flowchart showing a substrate processing method according to Embodiment 1 of the present invention. [Fig. 5] is a flowchart showing a substrate processing method according to Embodiment 1 of the present invention. [Fig. 6] is a flowchart showing a substrate processing method according to Embodiment 1 of the present invention. [FIG. 7] is a flowchart showing the substrate processing method according to Embodiment 1 of the present invention. [Fig. 8] is a flowchart showing a substrate processing method according to Embodiment 1 of the present invention. [Fig. 9] is a flowchart showing a substrate processing method according to Embodiment 1 of the present invention. [Fig. 10] Fig. 10 is a flowchart showing a substrate processing method according to Embodiment 2 of the present invention. [Fig. 11] Fig. 11 is a flowchart showing a substrate processing method according to Embodiment 2 of the present invention. [Fig. 12] Fig. 12 is a flowchart showing a substrate processing method according to Embodiment 3 of the present invention. [Fig. 13] Fig. 13 is a flowchart showing a substrate processing method according to Embodiment 3 of the present invention. [Fig. 14] Fig. 14 is a flowchart showing a substrate processing method according to Embodiment 3 of the present invention. [Fig. 15] Fig. 15 is a flowchart showing a substrate processing method according to Embodiment 3 of the present invention. [Fig. 16] Fig. 16 is a flowchart showing a substrate processing method according to another embodiment of the present invention.

2: Chamber

3: Processing tank

11:First nozzle

12:Second nozzle

13:The third nozzle

14:The fourth nozzle

15:The fifth nozzle

16:Sixth nozzle

19:Ninth nozzle

20:The tenth nozzle

42:Exhaust pipe

S13 to S15: Steps

W: substrate

Claims (23)

A substrate processing method, which is used to process a substrate, and includes the steps of positioning the water-repellent treated substrate above a treatment tank; supplying a vaporized organic solvent into a closed space for accommodating the treatment tank The process; the process of storing liquid diluted isopropyl alcohol in the aforementioned treatment tank, and the liquid aforementioned diluted isopropyl alcohol is diluted isopropyl alcohol; and the immersion process is the process of making the aforementioned water-repellent treated The substrate is lowered from a position above the treatment tank and immersed in the liquid dilute isopropyl alcohol in the treatment tank; before the immersion step, the vaporized organic solvent is supplied into the sealed space. The substrate processing method according to claim 1, further comprising the step of drying the substrate before immersing the water-repellent treated substrate in the diluted isopropyl alcohol in the treatment tank. The substrate processing method according to claim 1 or 2, further comprising the following steps: supplying a vaporized water-repellent agent into the closed space to perform water-repellent treatment on the substrate. The substrate processing method according to claim 3, further comprising the following steps: immersing the substrate in the cleaning liquid stored in the processing tank; scooping up the substrate from the cleaning liquid; and removing the cleaning liquid from the cleaning liquid. The treatment tank is drained; after the aforementioned cleaning liquid is drained, the aforementioned water-repellent treatment is performed. The substrate processing method according to claim 3, wherein after the water-repellent treatment, the vaporized organic solvent is supplied into the closed space. The substrate processing method according to Claim 3, wherein the pressure in the enclosed space is reduced and the water-repellent treatment is performed. The substrate processing method according to claim 6, further comprising the following steps: storing the diluted isopropyl alcohol before the treatment tank, and returning the pressure in the sealed space to atmospheric pressure. The substrate processing method as described in claim 1 or 2, further comprising the following steps: a lifting step in which the substrate is scooped up from the diluted isopropyl alcohol; and a drying step in which the substrate is scooped up from the diluted isopropyl alcohol. The aforementioned substrate is dried. The substrate processing method as described in claim 8, which further includes the following steps: before the aforementioned lifting step, supplying the vaporized organic solvent into the aforementioned closed space; the aforementioned drying step includes the following steps: placing the inert The gas is supplied into the aforementioned sealed space. The substrate processing method according to claim 8, wherein the pressure in the sealed space is reduced and the drying process is performed. The substrate processing method according to claim 1 or 2, wherein the diluted isopropyl alcohol is supplied to the processing tank in the immersion step. The substrate processing method according to claim 1 or 2, wherein the substrate is vibrated in the immersion step. The substrate processing method according to claim 1 or 2, wherein the concentration of isopropyl alcohol in the diluted isopropyl alcohol is 0.3% or more and less than 5%. A substrate processing method is used to process a substrate, and includes: a process of immersing the aforementioned substrate in a cleaning liquid stored in a processing tank; a process of scooping up the aforementioned substrate from the aforementioned cleaning liquid; and removing the aforementioned cleaning liquid from the aforementioned processing tank. The process of draining the liquid; the process of supplying the vaporized water-repellent agent into the closed space used to accommodate the aforementioned treatment tank and subjecting the aforementioned substrate to water-repellent treatment; storing the liquid diluted isopropyl alcohol in the aforementioned process In the process of the treatment tank, the liquid diluted isopropyl alcohol is diluted isopropyl alcohol; before the water-repellent treated substrate is immersed in the liquid diluted isopropyl alcohol in the treatment tank, the The substrate drying process; and the immersion process include immersing the water-repellent-treated substrate in the liquid diluted isopropyl alcohol in the treatment tank; after draining the cleaning liquid, the water-repellent treatment is performed . A substrate treatment method for treating a substrate, and includes the steps of: supplying a vaporized water-repellent agent into a closed space for accommodating a treatment tank and subjecting the substrate to a water-repellent treatment; adding a liquid The process of storing diluted isopropyl alcohol in the aforementioned treatment tank. The aforementioned liquid diluted isopropyl alcohol is diluted isopropyl alcohol; and the step of immersing the aforementioned substrate that has undergone water-repellent treatment into the liquid form in the aforementioned treatment tank. The step of drying the substrate before diluting the isopropyl alcohol; and the immersion step of immersing the water-repellent treated substrate in the liquid diluted isopropyl alcohol in the treatment tank; The pressure in the aforementioned sealed space is reduced and the aforementioned water-repellent treatment is performed. The substrate processing method according to claim 15, further comprising the following steps: storing the diluted isopropyl alcohol before the treatment tank, and returning the pressure in the sealed space to atmospheric pressure. A substrate processing method is used to process a substrate, and includes: a process of immersing the aforementioned substrate in a cleaning liquid stored in a processing tank; a process of scooping up the aforementioned substrate from the aforementioned cleaning liquid; and removing the aforementioned cleaning liquid from the aforementioned processing tank. The process of draining the liquid; the process of storing the liquid diluted isopropyl alcohol in the aforementioned treatment tank, and the aforementioned liquid diluted isopropyl alcohol is diluted isopropyl alcohol; supplying the vaporized water-repellent agent to A process for accommodating the substrate in a closed space of the treatment tank and subjecting the substrate to water-repellent treatment; and an immersion process in which the substrate subjected to water-repellent treatment is lowered from a position above the treatment tank and immersed in the treatment The liquid dilute isopropyl alcohol in the tank is subjected to the water-repellent treatment after the cleaning liquid is discharged. A substrate processing method is used to process a substrate, and includes the steps of storing liquid diluted isopropyl alcohol in a processing tank, where the liquid diluted isopropyl alcohol is diluted isopropyl alcohol; The process of supplying the water-repellent agent into a closed space for accommodating the treatment tank and subjecting the substrate to water-repellent treatment; and the immersion process in which the water-repellent treatment of the substrate is removed from above the treatment tank. The position is lowered and immersed in the liquid aforementioned diluted isopropyl alcohol in the aforementioned treatment tank; The pressure in the aforementioned sealed space is reduced and the aforementioned water-repellent treatment is performed. The substrate processing method according to claim 18, further comprising the following steps: storing the diluted isopropyl alcohol before the processing tank, and returning the pressure in the sealed space to atmospheric pressure. A substrate processing method is used to process a substrate, and includes: a process of immersing the aforementioned substrate in a cleaning liquid stored in a processing tank; a process of scooping up the aforementioned substrate from the aforementioned cleaning liquid; and removing the aforementioned cleaning liquid from the aforementioned processing tank. The process of draining the liquid; the process of supplying the vaporized water-repellent agent into the closed space used to accommodate the aforementioned treatment tank and subjecting the aforementioned substrate to water-repellent treatment; and storing diluted isopropyl alcohol in the aforementioned treatment tank. In the process, the aforementioned diluted isopropyl alcohol is diluted isopropyl alcohol; in the immersion process, the aforementioned substrate that has undergone water-repellent treatment is immersed in the aforementioned diluted isopropyl alcohol in the aforementioned treatment tank; in the aforementioned diluted isopropyl alcohol, Before lifting the substrate, the vaporized organic solvent is supplied into the sealed space; the lifting step is to lift the substrate from the diluted isopropyl alcohol; and the drying step is to lift the diluted isopropyl alcohol. The substrate is dried; after the cleaning liquid is discharged, the water-repellent treatment is performed; the drying process includes the following process: supplying an inert gas into the sealed space. A substrate processing method is used to process a substrate and includes: The process of supplying the vaporized water-repellent agent into the closed space used to accommodate the treatment tank and subjecting the aforementioned substrate to water-repellent treatment; the process of storing diluted isopropyl alcohol in the aforementioned treatment tank, the aforementioned diluted isopropyl alcohol The alcohol is diluted isopropyl alcohol; the immersion process involves immersing the water-repellent treated substrate in the aforementioned diluted isopropyl alcohol in the aforementioned treatment tank; before picking up the aforementioned substrate from the aforementioned diluted isopropyl alcohol, The vaporized organic solvent is supplied into the sealed space; the lifting step is to lift the substrate from the diluted isopropyl alcohol; and the drying step is to dry the substrate lifted from the diluted isopropyl alcohol; The pressure in the sealed space is reduced and the aforementioned water-repellent treatment is performed; the aforementioned drying process includes the following steps: supplying an inert gas into the aforementioned sealed space. The substrate processing method according to claim 21, further comprising the following steps: storing the diluted isopropyl alcohol before the treatment tank, and returning the pressure in the sealed space to atmospheric pressure. A substrate processing device is used to process substrates and is provided with: a processing tank that stores liquid diluted isopropyl alcohol, and the liquid diluted isopropyl alcohol is diluted isopropyl alcohol; and a chamber that contains The processing tank; the moving unit moves the substrate in the chamber between a first processing position in the processing tank and a second processing position above the processing tank; The control unit controls the moving unit to move the water-repellent treated substrate from the second processing position toward the first processing position and immerse it in the liquid diluted isopropyl alcohol in the processing tank; and gas The supply unit supplies the vaporized organic solvent into the chamber; the control unit controls the gas before the substrate that has undergone the water-repellent treatment is immersed in the liquid diluted isopropyl alcohol in the treatment tank. The supply part supplies the vaporized organic solvent into the chamber.