TW202209431A - Substrate processing method and substrate processing apparatus - Google Patents

Abstract

The present invention provides a substrate processing method and a substrate processing apparatus. The substrate processing method include a step (S14) of reserving dilute isopropyl alcohol (dIPA) that is diluted isopropyl alcohol in a processing tank (3) and an immersing step (S15) of immersing a substrate (W) subjected to water-repellent treatment in the dilute isopropyl alcohol (dIPA) in the processing tank (3).

Description

Substrate processing method and substrate processing apparatus

The present invention relates to a substrate processing method and a substrate processing apparatus.

The processes for processing substrates such as semiconductor wafers and manufacturing products such as semiconductor devices include: a chemical solution treatment process, which treats the substrate with a chemical solution; The surface-removing chemical solution; and the drying step, which dries the substrate.

However, in the drying process, the pattern formed on the surface of the substrate may collapse. The collapse of the pattern is caused by the surface tension of the cleaning solution that penetrates into the pattern.

Therefore, in order to avoid the collapse of the pattern, there may be cases where a water repellent agent is supplied to the substrate and the pattern is covered with a water repellent protective film. For example, Patent Document 1 discloses a substrate processing method, which sequentially performs chemical treatment, pure water cleaning, alcohol rinse, water repellency, alcohol cleaning, pure water cleaning, and drying on the substrate. deal with. The alcohol cleaning treatment after the water-repellent treatment is a treatment in which the water-repellent agent remaining on the surface of the substrate is replaced with IPA (isopropyl alcohol; isopropyl alcohol) and removed. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2010-114414.

[The problem to be solved by the invention]

However, when the alcohol cleaning treatment is performed after the water-repellent treatment, the water-repellent agent remaining on the surface of the substrate may react with IPA to generate particles. As a result, there is a possibility that the cleanliness of the substrate is lowered.

The present invention has been developed in view of the above-mentioned problems, and an object of the present invention is to provide a substrate processing method and a substrate processing apparatus which can improve the cleanliness of the substrate. [means to solve the problem]

One aspect of the present invention is a substrate processing method, which is a method for processing a substrate. The substrate processing method includes: a step of storing diluted isopropyl alcohol in a processing tank, wherein the diluted isopropyl alcohol is diluted isopropyl alcohol; and an immersion step of immersing the water-repellent treated substrate in a The aforementioned diluted isopropanol in the aforementioned treatment tank.

In one embodiment, the substrate processing method further includes a step of drying the substrate before immersing the water-repellent-treated substrate in the diluted isopropyl alcohol in the processing tank.

In one embodiment, the substrate processing method further includes a step of supplying the vaporized water-repellent agent into the closed space for accommodating the processing tank, and subjecting the substrate to a water-repellent treatment.

In one embodiment, the substrate processing method further includes the steps of: immersing the substrate in a cleaning solution stored in the processing tank; picking up the substrate from the cleaning solution; and removing the cleaning solution from the cleaning solution. Treatment tank drain. The aforementioned water repellency treatment is performed after the aforementioned cleaning liquid is drained.

In one embodiment, after the water repellency treatment, the vaporized organic solvent is supplied into the closed space.

In one embodiment, the pressure in the closed space is reduced and the water repellency treatment is performed.

In one embodiment, the substrate processing method further includes a step of returning the pressure in the closed space to atmospheric pressure before storing the diluted isopropyl alcohol in the processing tank.

In one embodiment, the substrate processing method further includes the steps of: a picking up step of picking up the substrate from the diluted isopropyl alcohol; and a drying step of picking up the substrate from the diluted isopropyl alcohol The substrate is dry.

In one embodiment, the substrate processing method further includes a step of supplying a vaporized organic solvent into a closed space for accommodating the processing tank before the picking-up step. The drying step includes a step of supplying an inert gas into the closed space.

In one embodiment, the above-mentioned drying step is performed by depressurizing the airtight space for accommodating the above-mentioned processing tank.

In one embodiment, the diluted isopropanol is supplied to the treatment tank in the immersion step.

In one embodiment, the substrate is vibrated in the dipping step.

In one embodiment, the concentration of isopropyl alcohol in the aforementioned diluted isopropyl alcohol is 0.3% or more and less than 5%.

Another aspect of the present invention is a substrate processing apparatus for processing a substrate. The aforementioned substrate processing apparatus includes a processing tank, a chamber, a moving unit, and a control unit. The aforesaid treatment tank stores the diluted isopropanol, and the aforementioned diluted isopropanol is the diluted isopropanol. The chamber accommodates the processing tank. The moving part moves the substrate between a first processing position in the processing tank and a second processing position outside the second processing tank in the chamber. The said control part controls the said moving part, and immerses the said board|substrate after the water repellency process in the said diluted isopropyl alcohol in the said processing tank. [Inventive effect]

According to the substrate processing method and the substrate processing apparatus of the present invention, the cleanliness of the substrate can be improved.

Hereinafter, embodiments of the substrate processing method and substrate processing apparatus of the present invention will be described with reference to the drawings ( FIGS. 1 to 16 ). However, the present invention is not limited to the following embodiments. In addition, there may be a case where the description is appropriately omitted for a portion where the description is repeated. In addition, in the drawings, the same reference numerals are attached to the same or corresponding parts, and the description thereof will not be repeated.

In this specification, for easy understanding, the X direction, the Y direction, and the Z direction which are orthogonal to each other are described in some cases. Typically, the X direction and the Y direction are parallel to the horizontal direction, and the Z direction is parallel to the vertical direction. However, the definitions of these directions are not intended to limit the directions when the substrate processing method of the present invention is performed and the directions when the substrate processing apparatus of the present invention is used.

The "substrate" in this embodiment can be applied to semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal display devices, glass substrates for plasma displays, and substrates for FEDs (Field Emission Displays). , Substrates for optical discs, substrates for magnetic discs, and substrates for optical and magnetic discs. Although the present embodiment will be described below mainly using a substrate processing method and a substrate processing apparatus used for processing a disk-shaped semiconductor wafer as an example, the present embodiment can also be applied to the processing of various substrates exemplified above. In addition, various shapes can be applied to the shape of the substrate.

[Embodiment 1] Hereinafter, Embodiment 1 of the present invention will be described with reference to FIGS. 1 to 9 . First, the substrate processing apparatus 100 of the present embodiment will be described with reference to FIGS. 1 and 2 . FIG. 1 is a schematic diagram showing the internal configuration of a substrate processing apparatus 100 according to the present embodiment. FIG. 2 is a schematic diagram showing another internal configuration of the substrate processing apparatus 100 of the present embodiment. The substrate processing apparatus 100 of the present embodiment is of a batch type. Therefore, the substrate processing apparatus 100 processes a plurality of substrates W systematically. Specifically, the substrate processing apparatus 100 processes a plurality of substrates W in units of lots. One lot is composed of 25 substrates W, for example.

As shown in FIG. 1 , the substrate processing apparatus 100 includes a processing unit 101 . The processing unit 101 dries the substrate W. Specifically, the processing unit 101 includes a chamber 2 , a processing tank 3 , a gas supply part 4 , a liquid supply part 5 , a holding part 50 , an opening and closing part 102 , and an elevating part 103 . Hereinafter, the processing unit 101 is described as "drying processing unit 101".

The board|substrate W has the pattern formation surface in which the pattern was formed. The pattern is formed on the surface of the substrate W by wet etching. Specifically, the substrate processing apparatus 100 includes a processing unit for etching the substrate W in addition to the drying processing unit 101 . The substrate W etched by the processing unit is conveyed (carried in) to the drying processing unit 101 .

The chamber 2 accommodates the processing tank 3 , the gas supply unit 4 and the liquid supply unit 5 . In addition, when the substrate W is processed, the holding portion 50 is accommodated in the chamber 2 . The chamber 2 has a cover 2a. The cover 2a is installed in the upper opening of the chamber 2 . The lid 2a is openable and closable.

The treatment tank 3 stores the treatment liquid. The treatment liquid system includes a cleaning liquid and diluted IPA (diluted isopropyl alcohol). Therefore, the treatment tank 3 stores the cleaning liquid and the diluted IPA. Diluted IPA refers to diluted IPA. In the present embodiment, the cleaning liquid is DIW (deionized water; deionized water). In addition, the diluted IPA is the IPA diluted by DIW. In other words, the diluted IPA is a mixture of IPA and DIW. Hereinafter, diluted IPA may be described as "dIPA".

The gas supply unit 4 supplies gas into the chamber 2 . Specifically, the gas supply unit 4 supplies the inert gas, the vapor of the organic solvent, and the vapor of the water repellent SMT into the chamber 2 . In the present embodiment, the vapor of the organic solvent is the vapor of IPA.

Specifically, the gas supply unit 4 has the first nozzle 11 to the eighth nozzle 18 . The first nozzle 11 to the eighth nozzle 18 are arranged inside the chamber 2 and outside the processing tank 3 . Specifically, the first nozzle 11 to the eighth nozzle 18 are arranged above the processing tank 3 . As described with reference to FIG. 2 , the first to sixth nozzles 11 to 16 eject the inert gas. Moreover, the 3rd nozzle 13 and the 4th nozzle 14 inject the vapor|steam of IPA further. The seventh nozzle 17 and the eighth nozzle 18 spray the steam of the water repellent SMT.

The water-repellent agent SMT is, for example, a silicon-based water-repellent agent or a metal-based water-repellent agent. Silicon-based water-repellent agents make silicon or a compound containing silicon water-repellent (hydrophobic). The metal-based water-repellent agent is used to water-repel (hydrophobize) a metal or a metal-containing compound.

The silicon-based water-repellent agent is, for example, a silane coupling agent. Silane coupling agents include, for example, HMDS (hexamethyldisilazane; hexamethyldisilazane), TMS (tetramethylsilane; tetramethylsilane), fluorinated alkylchlorosilane (fluorinated alkylchlorosilane), alkyl disilazane (alkyl disilazane) and At least one of non-chlorine-based hydrophobizing agents. Non-chlorine-based hydrophobizing agents include, for example, dimethylsilyldimethylamine (DMSDMA; dimethylsilyldimethylamine), dimethylsilyldiethylamine (DMSDEA; dimethylsilyldiethylamine), and hexamethyldisilazane (HMDS; hexamethyldisilazane). ), tetramethyldisilazane (TMDS; tetramethyldisilazane), bis(dimethylamino)dimethylsilane (bis(dimethylamino)dimethylsilane), N,N-dimethyltrimethylsilazane (DMATMS; N , N-dimethylamino trimethylsilane), N-(trimethylsilyl) dimethylamine (N-(trimethylsilyl) dimethylamine) and at least one of organosilane (organosilane) compounds.

The metal-based water-repellent agent includes, for example, at least one of an amine having a hydrophobic group and an organosilicon compound.

The water repellent SMT can also be diluted with a solvent having phase solubility with respect to the hydrophilic organic solvent. The solvent is, for example, IPA or PGMEA (propylene glycol monomethyl ether acetate; propylene glycol monomethyl ether acetate).

The liquid supply unit 5 supplies the processing liquid to the processing tank 3 . Specifically, the liquid supply unit 5 supplies the cleaning liquid (DIW) and dIPA to the processing tank 3 . Specifically, the liquid supply unit 5 has the ninth nozzle 19 and the tenth nozzle 20 . The ninth nozzle 19 and the tenth nozzle 20 are arranged in the processing tank 3 . As described with reference to FIG. 2 , the ninth nozzle 19 and the tenth nozzle 20 eject the cleaning liquid (DIW) and dIPA.

The holding portion 50 holds a plurality of substrates W. As shown in FIG. Specifically, the holding part 50 has a plurality of holding rods 51 and a main body plate 52 . In this embodiment, the holding part 50 has three holding rods 51 . The main body portion 52 is a plate-shaped member extending in the vertical direction (Z direction). The holding rods 51 extend in the horizontal direction (X direction) from one surface of the main body plate 52, respectively. The lower edge of each of the plurality of substrates W is in contact with a plurality of (here, three) holding rods 51 . The plurality of substrates W are held in a standing posture (vertical posture) in a state where they are aligned in the X direction at intervals.

The opening and closing portion 102 opens and closes the cover 2a. That is, the opening and closing portion 102 transitions the lid 2a between the open state and the closed state. By opening and closing the cover 2a, the opening of the upper part of the chamber 2 is shifted between a closed state and an open state. The opening and closing portion 102 includes a drive source and an opening and closing mechanism, and the opening and closing mechanism is driven by the drive source to open and close the lid 2a. The drive source system includes, for example, a motor. The opening and closing mechanism includes, for example, a rack and pinion mechanism.

The raising and lowering part 103 raises and lowers the holding part 50 . The holding part 50 is raised and lowered by the raising and lowering part 103 , so that the substrate W held by the holding part 50 is raised and lowered. The elevating portion 103 has a drive source and an elevating mechanism, and the elevating mechanism is driven by the drive source to raise and lower the holding portion 50 . The drive source system includes, for example, a motor. The lift mechanism includes, for example, a rack and pinion mechanism or a ball screw.

Specifically, the elevating part 103 moves (elevates) the holding part 50 (substrate W) between the outside and the inside of the chamber 2 through the opening in the upper part of the chamber 2 . That is, the elevating part 103 carries out the loading of the substrate W into the chamber 2 and the loading of the substrate W to the outside of the chamber 2 .

Further, the elevating unit 103 moves (elevates) the holding unit 50 (substrate W) in the chamber 2 between the first processing position in the processing tank 3 and the second processing position outside the processing tank 3 . The holding portion 50 moves toward the first processing position, whereby the substrate W moves into the processing tank 3 . The holding portion 50 moves to the second processing position, whereby the substrate W moves out of the processing tank 3 . Specifically, the second processing position is a position above the first processing position. When the holding part 50 moves to the second processing position, the substrate W moves to the space above the processing tank 3 . The elevating part 103 is an example of a moving part. 1 shows the holding portion 50 and the substrate W that have moved to the first processing position by solid lines, and the holding portion 50 and the substrate W that have moved to the second processing position by broken lines.

Next, the substrate processing apparatus 100 will be further described with reference to FIG. 1 . As shown in FIG. 1 , the substrate processing apparatus 100 further includes a control device 110 . The control device 110 controls the operation of each part of the substrate processing apparatus 100 . Specifically, the control device 110 includes a control unit 111 and a memory unit 112 .

The control unit 111 has a processor. The control unit 111 has, for example, a CPU (Central Processing Unit; central processing unit) or an MPU (Micro Processor Unit; micro processing unit). Alternatively, the control unit 111 may include a general-purpose computing machine.

The memory unit 112 stores data and computer programs. The data includes recipe data. The prescription data includes information for displaying a plurality of prescriptions. The plurality of recipes define the processing contents and processing procedures of the substrate W, respectively.

The memory unit 112 has a main memory device. The main memory device is, for example, a semiconductor memory. The memory unit 112 may further have an auxiliary memory device. The auxiliary memory device includes, for example, at least one of a semiconductor memory and a hard disk drive. The memory unit 112 may also include removable media. The control part 111 controls the operation|movement of each part of the board|substrate processing apparatus 100 based on the computer program and data memorize|stored in the memory|storage part 112.

The control device 110 (control unit 111 ) controls the opening/closing unit 102 to transition the lid 2a between the open state and the closed state. Specifically, the control device 110 (control unit 111 ) sets the lid 2 a to the open state when the substrate W is loaded into the chamber 2 and when the substrate W is loaded out of the chamber 2 . When the lid 2 a is in the open state, the opening of the upper part of the chamber 2 is in the open state, and the substrate W can be loaded into the chamber 2 and the substrate W can be loaded out of the chamber 2 . The control device 110 (control unit 111 ) sets the lid 2 a to a closed state when the substrate W is processed. When the lid 2a is in the closed state, the opening of the upper part of the chamber 2 is in the closed state. As a result, the inside of the chamber 2 becomes a closed space. The substrate W is processed in a closed space.

The control device 110 (control unit 111 ) controls the lift unit 103 to move the holding unit 50 (substrate W) up and down. Specifically, the control device 110 (control unit 111 ) moves the holding unit 50 from the outside of the chamber 2 to the inside through the opening of the upper part of the chamber 2 when the substrate W is loaded into the chamber 2 to move the substrate W into the chamber 2 . into the chamber 2. The control device 110 (control unit 111 ) moves the holding unit 50 from the inside of the chamber 2 to the outside through the opening of the upper part of the chamber 2 to unload the substrate W from the chamber 2 when the substrate W is unloaded to the outside of the chamber 2 . . The control device 110 (control unit 111 ) moves (raises and lowers) the holding unit 50 in the chamber 2 between the first processing position and the second processing position when the substrate W is processed.

Next, the substrate processing apparatus 100 will be further described with reference to FIG. 2 . As shown in FIG. 2 , the substrate processing apparatus 100 further includes an inert gas supply source 21 , an IPA supply source 22 , a water repellent supply source 23 , a DIW supply source 24 , a decompression unit 25 , and a first piping 31 to a seventh piping. 37. The drain line 41, the exhaust line 42, the first valve V1 to the eighth valve V8, the first heater H1 and the second heater H2.

The inert gas supply source 21 supplies inert gas. An inert gas system is, for example, nitrogen. The IPA supply source 22 supplies IPA. The water-repellent agent supply source 23 supplies the water-repellent agent SMT. The DIW supply source 24 supplies DIW.

The inert gas is supplied from the inert gas supply source 21 to the first piping 31 . The first piping 31 circulates the inert gas supplied from the inert gas supply source 21 to the first nozzle 11 and the second nozzle 12 .

The first nozzle 11 and the second nozzle 12 are hollow tubular members. A plurality of ejection holes are formed in the first nozzle 11 and the second nozzle 12, respectively. In the present embodiment, the first nozzle 11 and the second nozzle 12 extend in the X direction. The plurality of ejection holes of the first nozzle 11 are formed in the X direction at equal intervals. Similarly, the plurality of ejection holes of the second nozzle 12 are formed in the X direction at equal intervals.

When the inert gas is supplied to the first nozzle 11 through the first piping 31 , the inert gas is ejected into the chamber 2 from the plurality of ejection holes of the first nozzle 11 . Similarly, when the inert gas is supplied to the second nozzle 12 via the first piping 31 , the inert gas is ejected into the chamber 2 from the plurality of ejection holes of the second nozzle 12 .

The first valve V1 is interposed between the first piping 31 . The first valve V1 is an on-off valve for opening and closing the flow path of the first piping 31 . The first valve V1 controls the flow of the inert gas flowing through the first piping 31 . Specifically, when the first valve V1 is opened, the inert gas system flows through the first piping 31 to the first nozzle 11 and the second nozzle 12 . As a result, the inert gas is ejected from the first nozzle 11 and the second nozzle 12 . When the first valve V1 is closed, the flow of the inert gas is blocked, and the ejection of the inert gas from the first nozzle 11 and the second nozzle 12 is stopped.

The first valve V1 also functions as an adjustment valve for adjusting the flow rate of the inert gas flowing through the first piping 31 . The first valve V1 is, for example, a solenoid valve. The first valve V1 is controlled by the control device 110 (control unit 111 ).

IPA is supplied from the IPA supply source 22 to the second piping 32 . The first heater H1 is interposed between the second piping 32 . The first heater H1 heats the IPA to vaporize the IPA. That is, the first heater H1 generates the vapor of IPA. The second piping 32 flows the vapor of the IPA to the third nozzle 13 and the fourth nozzle 14 .

The third nozzle 13 and the fourth nozzle 14 are arranged below the first nozzle 11 and the second nozzle 12 . The configuration of the third nozzle 13 and the fourth nozzle 14 is the same as that of the first nozzle 11 and the second nozzle 12 . Like the first nozzle 11 and the second nozzle 12 , the third nozzle 13 and the fourth nozzle 14 eject the vapor of IPA into the chamber 2 .

The second valve V2 is interposed in the second piping 32 . The second valve V2 is an on-off valve for opening and closing the flow path of the second piping 32 . The second valve V2 is provided downstream of the first heater H1 with respect to the second piping 32 . Like the first valve V1 , the second valve V2 controls the flow of the vapor of the IPA flowing through the second piping 32 . The second valve V2 also functions as a regulating valve for regulating the flow rate of the steam of the IPA flowing through the second piping 32 . The second valve V2 is, for example, a solenoid valve. The second valve V2 is controlled by the control device 110 (control unit 111 ).

The inert gas is supplied from the inert gas supply source 21 to the third piping 33 . The third piping 33 is connected to the second piping 32 . That is, the 3rd piping 33 distribute|circulates the inert gas to the 2nd piping 32. As shown in FIG.

The third valve V3 is interposed in the third piping 33 . The third valve V3 is an on-off valve for opening and closing the flow path of the third piping 33 . Like the first valve V1 , the third valve V3 controls the flow of the inert gas flowing through the third piping 33 . The third valve V3 also functions as an adjustment valve for adjusting the flow rate of the inert gas flowing through the third piping 33 . The third valve V3 is, for example, a solenoid valve. The third valve V3 is controlled by the control device 110 (control unit 111 ).

The control device 110 (control unit 111 ) opens the second valve V2 and closes the third valve V3 when causing the third nozzle 13 and the fourth nozzle 14 to discharge the vapor of IPA. On the other hand, the control device 110 (control unit 111 ) closes the second valve V2 and opens the third valve V3 when causing the third nozzle 13 and the fourth nozzle 14 to discharge the inert gas. When the third valve V3 is opened, the inert gas system flows from the third pipe 33 to the second pipe 32 , and the inert gas is supplied to the third nozzle 13 and the fourth nozzle 14 via the second pipe 32 . As a result, the inert gas is ejected into the chamber 2 from the third nozzle 13 and the fourth nozzle 14 .

The fourth piping 34 is supplied with an inert gas from the inert gas supply source 21 . The fourth piping 34 circulates the inert gas supplied from the inert gas supply source 21 to the fifth nozzle 15 and the sixth nozzle 16 .

The fifth nozzle 15 and the sixth nozzle 16 are arranged below the third nozzle 13 and the fourth nozzle 14 . The configuration of the fifth nozzle 15 and the sixth nozzle 16 is the same as that of the first nozzle 11 and the second nozzle 12 . Like the first nozzle 11 and the second nozzle 12 , the fifth nozzle 15 and the sixth nozzle 16 eject the inert gas into the chamber 2 .

The fourth valve V4 is interposed in the fourth piping 34 . The fourth valve V4 is an on-off valve for opening and closing the flow path of the fourth piping 34 . Like the first valve V1 , the fourth valve V4 controls the flow of the inert gas flowing through the fourth piping 34 . The fourth valve V4 also functions as an adjustment valve for adjusting the flow rate of the inert gas flowing through the fourth piping 34 . The fourth valve V4 is, for example, a solenoid valve. The fourth valve V4 is controlled by the control device 110 (control unit 111 ).

The water-repellent agent SMT is supplied from the water-repellent agent supply source 23 to the fifth piping 35 . The second heater H2 is interposed in the fifth piping 35 . The second heater H2 heats the water-repellent agent SMT to vaporize the water-repellent agent SMT. That is, the second heater H2 generates the steam of the water repellent SMT. The fifth piping 35 circulates the water repellent SMT to the seventh nozzle 17 and the eighth nozzle 18 .

The seventh nozzle 17 and the eighth nozzle 18 are arranged below the fifth nozzle 15 and the sixth nozzle 16 . The configuration of the seventh nozzle 17 and the eighth nozzle 18 is the same as that of the first nozzle 11 and the second nozzle 12 . Similarly to the first nozzle 11 and the second nozzle 12 , the seventh nozzle 17 and the eighth nozzle 18 eject the vapor of the water repellent SMT into the chamber 2 .

A fifth valve V5 is interposed in the fifth piping 35 . The fifth valve V5 is an on-off valve for opening and closing the flow path of the fifth piping 35 . The fifth valve V5 is provided downstream of the second heater H2 with respect to the fifth pipe 35 . Like the first valve V1 , the fifth valve V5 controls the flow of the vapor of the water repellent SMT flowing through the fifth piping 35 . The fifth valve V5 also functions as a regulating valve for regulating the flow rate of the steam of the water repellent SMT flowing through the fifth piping 35 . The fifth valve V5 is, for example, a solenoid valve. The fifth valve V5 is controlled by the control device 110 (control unit 111 ).

DIW is supplied from the DIW supply source 24 to the sixth piping 36 . The sixth piping 36 circulates the DIW supplied from the DIW supply source 24 to the ninth nozzle 19 and the tenth nozzle 20 .

The configurations of the ninth nozzle 19 and the tenth nozzle 20 are the same as those of the first nozzle 11 and the second nozzle 12 . By supplying DIW to the ninth nozzle 19 and the tenth nozzle 20 via the sixth piping 36 , the DIW is ejected from the ninth nozzle 19 and the tenth nozzle 20 into the processing tank 3 .

A sixth valve V6 is interposed in the sixth piping 36 . The sixth valve V6 is an on-off valve for opening and closing the flow path of the sixth piping 36 . Like the first valve V1 , the sixth valve V6 controls the flow of DIW flowing through the sixth piping 36 . The sixth valve V6 also functions as a regulating valve for regulating the flow rate of DIW flowing through the sixth piping 36 . The sixth valve V6 is, for example, a solenoid valve. The sixth valve V6 is controlled by the control device 110 (control unit 111 ).

IPA is supplied from the IPA supply source 22 to the seventh piping 37 . The seventh piping 37 is connected to the sixth piping 36 . That is, the seventh piping 37 circulates the IPA to the sixth piping 36 .

A seventh valve V7 is interposed in the seventh piping 37 . The seventh valve V7 is an on-off valve for opening and closing the flow path of the seventh piping 37 . Similar to the first valve V1 , the seventh valve V7 controls the flow of IPA flowing through the seventh pipe 37 . The seventh valve V7 also functions as an adjustment valve for adjusting the flow rate of IPA flowing through the seventh piping 37 . The seventh valve V7 is, for example, a solenoid valve. The seventh valve V7 is controlled by the control device 110 (control unit 111 ).

The control device 110 (control unit 111 ) opens the sixth valve V6 and closes the seventh valve V7 when storing DIW in the processing tank 3 . Thereby, DIW is ejected into the processing tank 3 from the ninth nozzle 19 and the tenth nozzle 20 .

On the other hand, the control device 110 (control unit 111 ) opens the sixth valve V6 and the seventh valve V7 when storing dIPA in the processing tank 3 . When the sixth valve V6 and the seventh valve V7 are opened, IPA flows from the seventh pipe 37 to the sixth pipe 36 , and the IPA merges into the DIW flowing in the sixth pipe 36 , thereby generating dIPA in the sixth pipe 36 . dIPA is supplied to the ninth nozzle 19 and the tenth nozzle 20 via the sixth piping 36 . As a result, dIPA is ejected into the processing tank 3 from the ninth nozzle 19 and the tenth nozzle 20 .

Further, the control device 110 (control unit 111 ) adjusts the opening degrees of the sixth valve V6 and the seventh valve V7 so that the concentration of IPA in dIPA becomes a predetermined concentration. The predetermined concentration is 0.3% or more and less than 5%.

The drain line 41 is connected to the bottom of the processing tank 3 . An eighth valve V8 is sandwiched in the drain line 41 . The eighth valve V8 is an on-off valve for opening and closing the flow path of the drain line 41 . The eighth valve V8 is, for example, a solenoid valve. The eighth valve V8 is controlled by the control device 110 (control unit 111 ). The control device 110 (control unit 111 ) closes the eighth valve V8 when storing the treatment liquid in the treatment tank 3 . On the other hand, the control device 110 (control unit 111 ) opens the eighth valve V8 when the processing liquid is discharged from the processing tank 3 . When the eighth valve V8 is opened, the processing liquid stored in the processing tank 3 is discharged from the processing tank 3 to the outside of the chamber 2 via the drain line 41 .

The decompression part 25 reduces the pressure in the chamber 2 . That is, the decompression part 25 decompresses the inside of the chamber 2 . The decompression unit 25 includes, for example, an exhaust pump. The exhaust pump is, for example, a vacuum pump. The decompression unit 25 is controlled by the control device 110 (control unit 111 ). Specifically, the decompression unit 25 is connected to the chamber 2 via the exhaust line 42 . The decompression part 25 exhausts the gas in the chamber 2 when the lid 2a is in the closed state, and decompresses the chamber 2 to less than atmospheric pressure.

Next, the substrate processing apparatus 100 and the substrate processing method of the present embodiment will be described with reference to FIGS. 1 to 9 . The substrate processing method of the present embodiment is executed by the substrate processing apparatus 100 described in FIGS. 1 and 2 . 3 to 9 are flowcharts showing the substrate processing method of the present embodiment. In detail, FIGS. 3 to 9 show processing sequences performed by the substrate processing apparatus 100 . As shown in FIGS. 3 to 9 , the substrate processing method (processing procedure) of the present embodiment includes steps S1 to S21.

First, as shown in FIG. 3 , in step S1 , the control device 110 (control unit 111 ) moves the holding unit 50 to the first processing position, and immerses the substrate W carried into the chamber 2 into the processing unit. DIW for slot 3.

The substrate W after the etching process (after the wet etching process) is carried into the chamber 2 . The etching liquid adhering to the surface of the substrate W is washed by DIW by immersing the substrate W after the etching process in DIW.

In the present embodiment, in step S1 , the control device 110 (control unit 111 ) discharges DIW from the ninth nozzle 19 and the tenth nozzle 20 (liquid supply unit 5 ). Thereby, the etching liquid system is further washed.

Moreover, in step S1, the control apparatus 110 (control part 111) makes the 3rd nozzle 13 and the 4th nozzle 14 inject inert gas. For example, the control device 110 (control unit 111 ) starts to spray the inert gas after immersing the substrate W in DIW. In addition, the decompression part 25 is not driven at this time. Therefore, the internal pressure of the chamber 2 becomes atmospheric pressure.

Next, in step S2, the control device 110 (control unit 111) continues to blow out the inert gas. In addition, in step S2, the control apparatus 110 (control part 111) stops the discharge of DIW from the ninth nozzle 19 and the tenth nozzle 20 (liquid supply part 5). In addition, the decompression part 25 is not driven at this time. Therefore, the internal pressure of the chamber 2 becomes atmospheric pressure.

Next, in step S3, the control apparatus 110 (control part 111) keeps injecting an inert gas. In addition, in step S3 , the control device 110 (control unit 111 ) drives the decompression unit 25 to exhaust the gas in the chamber 2 through the exhaust line 42 . As a result, the inside of the chamber 2 is depressurized to less than the atmospheric pressure. In addition, at this time, the board|substrate W was immersed in DIW. Therefore, pattern collapse due to drying of the substrate W can be avoided.

Next, as shown in FIG. 4 , in step S4 , the control device 110 (control unit 111 ) continues to depressurize the inside of the chamber 2 . The decompression in the chamber 2 is continued until step S12 (FIG. 6). In addition, in step S4, the control apparatus 110 (control part 111) makes the 3rd nozzle 13 and the 4th nozzle 14 discharge the vapor|steam of IPA. As a result, an atmosphere of vapor containing IPA is formed in the chamber 2 . In addition, the vapor|steam of IPA is continued until step S7 (FIG. 7).

Next, in step S5, the control apparatus 110 (control part 111) moves the holding|maintenance part 50 to a 2nd process position, and lifts up the board|substrate W from DIW. As a result, the water droplets (droplets of DIW) adhering to the substrate W are removed by the vapor of the IPA. More specifically, the water droplets adhering to the substrate W are replaced with IPA droplets.

In addition, in step S5 , the control device 110 (control unit 111 ) opens the eighth valve V8 to discharge DIW from the processing tank 3 via the drain line 41 . In addition, the open state of the eighth valve V8 is maintained until step S13 ( FIG. 7 ).

According to the present embodiment, in step S5, the replacement of the water droplets with the droplets of IPA can be performed in a reduced pressure state. Therefore, the replacement of the water droplets with the droplets of IPA can be carried out in a shorter time than in the case of carrying out in an atmospheric pressure state.

Next, in step S6, the control apparatus 110 (control part 111) moves the holding|maintenance part 50 to the 1st processing position, and moves the board|substrate W into the processing tank 3. FIG. At this time, no DIW remained in the processing tank 3 .

Next, as shown in FIG. 5 , in step S7 , the control device 110 (control unit 111 ) moves the holding unit 50 to the second processing position to lift the substrate W from the processing tank 3 . Moreover, in step S7, the control apparatus 110 (control part 111) makes the 7th nozzle 17 and the 8th nozzle 18 discharge the vapor|steam of the water repellent agent SMT. In addition, in step S7, the vapor|steam of IPA and the vapor|steam of a water repellent agent SMT are ejected in order to suppress the fluctuation|variation of the pressure in the chamber 2. FIG.

Next, in step S8, the control apparatus 110 (control part 111) continuously discharges the vapor|steam of the water repellent agent SMT. In addition, in step S8, the control apparatus 110 (control part 111) stops injecting the vapor|steam of IPA. As a result, the droplets of IPA adhering to the substrate W are replaced with droplets of the water-repellent agent SMT, and a water-repellent protective film is formed on the surface of the substrate W. As shown in FIG. Therefore, the pattern formed on the substrate W is covered with a water-repellent protective film (water-repellent treatment). The pattern is covered with a water-repellent protective film to avoid pattern collapse.

Next, in step S9, the control apparatus 110 (control part 111) makes the 3rd nozzle 13 and the 4th nozzle 14 discharge the vapor|steam of IPA. In addition, in step S9, the control apparatus 110 (control part 111) continuously discharges the vapor|steam of the water repellent agent SMT. The purpose of ejecting the vapor of IPA and the vapor of the water repellent SMT in step S9 is to suppress the fluctuation of the pressure in the chamber 2 .

Next, as shown in FIG. 6, in step S10, the control apparatus 110 (control part 111) stops injecting the vapor|steam of the water repellent agent SMT. In addition, in step S10, the control apparatus 110 (control part 111) keeps blowing out the vapor|steam of IPA. As a result, the residue of the water repellent agent SMT adhering to the substrate W is removed by the vapor of IPA. More specifically, the residues of the water repellent SMT adhering to the substrate W are replaced with droplets of IPA.

Next, in step S11 , the control device 110 (control unit 111 ) causes the third nozzle 13 and the fourth nozzle 14 to discharge the inert gas.

Next, in step S12 , the control device 110 (control unit 111 ) keeps the third nozzle 13 and the fourth nozzle 14 ejecting the inert gas, and the first nozzle 11 , the second nozzle 12 , the fifth nozzle 15 , and the sixth nozzle 14 . The nozzle 16 also sprays inert gas. As a result, the substrate W is dried. In this embodiment, the substrate W is dried in a reduced pressure state. Compared with the case where the substrate W is dried under the atmospheric pressure, drying efficiency can be improved by drying the substrate W under the reduced pressure. That is, the time required for drying the substrate W can be shortened.

Next, as shown in FIG. 7 , in step S13 , the control device 110 (control unit 111 ) continues to eject the inert gas from the first nozzle 11 to the sixth nozzle 16 and stops the driving of the decompression unit 25 . As a result, the internal pressure of the chamber 2 returns to the atmospheric pressure.

Next, in step S14, the control device 110 (control unit 111) stops the discharge of the inert gas from the first nozzle 11, the second nozzle 12, the fifth nozzle 15, and the sixth nozzle 16, while the third nozzle 13 and the The fourth nozzle 14 continuously sprays the inert gas.

In addition, in step S14 , after closing the eighth valve V8 , the control device 110 (control unit 111 ) causes the ninth nozzle 19 and the tenth nozzle 20 to discharge dIPA and store dIPA in the processing tank 3 . At this time, the internal pressure of the chamber 2 becomes atmospheric pressure. Therefore, dIPA can be easily stored in the processing tank 3 .

Next, in step S15, the control apparatus 110 (control part 111) stops the discharge of dIPA. Moreover, in step S15, the control apparatus 110 (control part 111) moves the holding|maintenance part 50 to a 1st processing position, and immerses the board|substrate W in dIPA stored in the processing tank 3 (immersion process). As a result, fine particles generated by the reaction of the residue of the water repellent SMT adhering to the substrate W and IPA are removed by dIPA. Specifically, the fine particles generated by the reaction of the water repellent SMT and IPA are dissolved in the water contained in dIPA.

In addition, in step S15 , the control device 110 (control unit 111 ) continuously ejects the inert gas, while driving the decompression unit 25 to exhaust the gas in the chamber 2 through the exhaust line 42 . As a result, the inside of the chamber 2 is depressurized to less than the atmospheric pressure. The decompression in the chamber 2 is continued until step S19 (FIG. 9).

In addition, in step S15, the control apparatus 110 (control part 111) may continue to discharge dIPA. By continuously ejecting dIPA, fine particles generated by the reaction of the water repellent SMT and IPA can be further removed.

In addition, in step S15, the control apparatus 110 (control part 111) may rock|fluctuate (vibrate) the holding|maintenance part 50 in the up-down direction, maintaining the state of the board|substrate W immersed in dIPA. Thereby, the fine particles generated by the reaction of the water repellent SMT and IPA can be further removed.

Next, as shown in FIG. 8, in step S16, the control apparatus 110 (control part 111) makes the 3rd nozzle 13 and the 4th nozzle 14 discharge the vapor|steam of IPA. As a result, an atmosphere containing the vapor of IPA is formed in the chamber 2 .

Next, in step S17, the control apparatus 110 (control part 111) moves the holding|maintenance part 50 to a 2nd process position, and lifts up the board|substrate W from dIPA (lifting process). As a result, the droplets of dIPA adhering to the substrate W are removed by the vapor of IPA. More specifically, the droplets of dIPA adhering to the substrate W are replaced with droplets of IPA.

Moreover, in step S17, the control apparatus 110 (control part 111) opens the eighth valve V8, and discharges dIPA from the processing tank 3 via the drain line 41. In addition, the open state of the eighth valve V8 is maintained until step S21 ( FIG. 9 ).

According to this embodiment, in step S17, the droplet of dIPA can be replaced with the droplet of IPA in a reduced pressure state. Therefore, the replacement of the droplets of dIPA with the droplets of IPA can be carried out in a shorter time than in the case of carrying out in an atmospheric pressure state.

Next, in step S18 , the control device 110 (control unit 111 ) causes the third nozzle 13 and the fourth nozzle 14 to discharge the inert gas.

Next, as shown in FIG. 9 , in step S19 , the control device 110 (control unit 111 ) continuously causes the third nozzle 13 and the fourth nozzle 14 to eject the inert gas, and also causes the first nozzle 11 , the second nozzle 12 , and the The fifth nozzle 15 and the sixth nozzle 16 eject the inert gas (drying step). As a result, the substrate W is dried.

In this embodiment, the substrate W is dried in a reduced pressure state. Compared with the case where the substrate W is dried under the atmospheric pressure, drying efficiency can be improved by drying the substrate W under the reduced pressure.

Next, in step S20 , the control device 110 (control unit 111 ) continues to eject the inert gas from the first nozzle 11 to the sixth nozzle 16 and stops the driving of the decompression unit 25 . As a result, the internal pressure of the chamber 2 returns to the atmospheric pressure.

Next, in step S21 , the control device 110 (control unit 111 ) stops the discharge of the inert gas from the first nozzle 11 , the second nozzle 12 , the fifth nozzle 15 , and the sixth nozzle 16 , while the third nozzle 13 stops the discharge of the inert gas. And the fourth nozzle 14 continuously sprays the inert gas. At this time, the internal pressure of the chamber 2 becomes atmospheric pressure.

The first embodiment of the present invention has been described above with reference to FIGS. 1 to 9 . According to this embodiment, the fine particles generated by the reaction of the residue of the water repellent SMT adhering to the substrate W and IPA can be removed by dIPA. Therefore, the cleanliness of the substrate W can be improved.

Further, according to the present embodiment, the water droplets adhering to the surface of the substrate W can be replaced with the droplets of IPA before the steam of the water repellent agent SMT is ejected. Therefore, the droplets of the water repellent agent SMT can be easily attached to the surface of the substrate W compared with the case where the water droplets are attached to the surface of the substrate W. FIG.

Further, according to the present embodiment, the droplets of dIPA adhering to the surface of the substrate W can be replaced with droplets of IPA before the drying process (step S19). Since the surface tension of IPA is smaller than that of dIPA, the surface tension of the liquid acting on the pattern during the drying process becomes smaller, which can further avoid the collapse of the pattern.

Further, according to the present embodiment, the water-repellent film can be formed on the surface of the substrate W by ejecting the vapor of the water-repellent agent SMT in a reduced pressure state. Therefore, the water-repellent film can be formed more easily than when the vapor of the water-repellent agent SMT is ejected in an atmospheric pressure state to form a water-repellent film on the surface of the substrate W.

[Embodiment 2] Next, Embodiment 2 of the present invention will be described with reference to FIGS. 1 , 2 to 7 , 10 and 11 . However, descriptions of matters different from those of the first embodiment will be omitted, and descriptions of the same matters as those of the first embodiment will be omitted. The difference between the second embodiment and the first embodiment is that the treatment after the cleaning treatment by dIPA is performed in an atmospheric pressure state.

10 and 11 are flowcharts showing the substrate processing method of the present embodiment. In detail, FIG. 10 and FIG. 11 show the processing sequence performed by the substrate processing apparatus 100 . The substrate processing method (processing procedure) of the present embodiment includes steps S1 to S14 described with reference to FIGS. 3 to 7 . As shown in FIG. 10 and FIG. 11 , the substrate processing method of the present embodiment further includes steps S31 to S36.

In the present embodiment, first, the control device 110 (control unit 111 ) executes the processing from step S1 to step S14 described in the first embodiment. After that, as shown in FIG. 10 , the control device 110 (control unit 111 ) stops the discharge of dIPA in step S31 . Moreover, in step S31, the control apparatus 110 (control part 111) moves the holding part 50 to a 1st processing position, and immerses the board|substrate W in the dIPA stored in the processing tank 3 (immersion process). As a result, fine particles generated by the reaction of the residue of the water repellent SMT adhering to the substrate W and IPA can be removed by dIPA.

In addition, in step S31, similarly to step S15, the control apparatus 110 (control part 111) keeps injecting an inert gas. On the other hand, unlike step S15 , the control device 110 (control unit 111 ) does not drive the decompression unit 25 . Therefore, the internal pressure of the chamber 2 is maintained at atmospheric pressure. Until step 34 (FIG. 11), the internal pressure of the chamber 2 is maintained at atmospheric pressure.

In addition, in step S31, similarly to step S15, the control apparatus 110 (control part 111) can also continue to discharge dIPA. In step S31 , similarly to step S15 , the control device 110 (control unit 111 ) may swing (vibrate) the holding unit 50 in the vertical direction while maintaining the state of the substrate W immersed in dIPA.

Next, in step S32, the control apparatus 110 (control part 111) makes the 3rd nozzle 13 and the 4th nozzle 14 discharge the vapor|steam of IPA. As a result, an atmosphere containing the vapor of IPA is formed in the chamber 2 .

Next, in step S33, the control apparatus 110 (control part 111) moves the holding part 50 to the 2nd processing position, and lifts up the board|substrate W from dIPA (lifting process). Moreover, in step S33, the control apparatus 110 (control part 111) opens the eighth valve V8, and discharges dIPA from the processing tank 3 via the drain line 41. In addition, the open state of the eighth valve V8 is maintained until step S36 ( FIG. 11 ).

Next, as shown in FIG. 11, in step S34, the control apparatus 110 (control part 111) continuously ejects the vapor|steam of IPA. As a result, the droplets of dIPA adhering to the substrate W are removed by the vapor of IPA.

Next, in step S35 , the control device 110 (control unit 111 ) drives the decompression unit 25 to exhaust the gas in the chamber 2 through the exhaust line 42 . As a result, the inside of the chamber 2 is depressurized to less than the atmospheric pressure. Moreover, in step S35, the control apparatus 110 (control part 111) dries the board|substrate W by making the 3rd nozzle 13 and the 4th nozzle 14 discharge an inert gas (drying process).

In this embodiment, the substrate W is dried in a reduced pressure state. Compared with the case where the substrate W is dried under the atmospheric pressure, drying efficiency can be improved by drying the substrate W under the reduced pressure.

Next, in step S36 , the control device 110 (control unit 111 ) keeps the third nozzle 13 and the fourth nozzle 14 ejecting the inert gas, and also makes the first nozzle 11 , the second nozzle 12 , the fifth nozzle 15 , and the third nozzle 14 . Six nozzles 16 spray inert gas. Moreover, in step S36, the control apparatus 110 (control part 111) stops driving of the decompression part 25. As a result, the internal pressure of the chamber 2 returns to the atmospheric pressure.

According to the present embodiment, by ejecting the inert gas from the first nozzle 11 to the sixth nozzle 16, the internal pressure of the chamber 2 can be efficiently returned to the atmospheric pressure.

The second embodiment of the present invention has been described above with reference to FIGS. 1 , 2 to 7 , 10 and 11 . According to this embodiment, the fine particles generated by the reaction of the residue of the water repellent SMT adhering to the substrate W and IPA can be removed by dIPA. Therefore, the cleanliness of the substrate W can be improved.

[Embodiment 3] Next, Embodiment 3 of the present invention will be described with reference to FIGS. 1 , 2 , and 10 to 15 . However, descriptions of matters different from those of the first and second embodiments will be omitted, and descriptions of the same matters as those of the first and second embodiments will be omitted. Different from Embodiment 1 and Embodiment 2, Embodiment 3 is processed under atmospheric pressure.

12 to 15 are flowcharts showing the substrate processing method of the present embodiment. In detail, FIGS. 12 to 15 show the processing sequence performed by the substrate processing apparatus 100 . As shown in FIGS. 12 to 15 , the substrate processing method (processing procedure) of the present embodiment includes steps S41 to S52. In addition, the substrate processing method of the present embodiment further includes steps S33 to S36 described with reference to FIGS. 10 and 11 .

First, as shown in FIG. 12 , in steps S41 and S42 , the control device 110 (control unit 111 ) performs the same processing as in steps S1 and S2 described in the first embodiment. Since the processing of step S41 and step S42 is the same as that of step S1 and step S2 described in the first embodiment, the description is omitted.

Next, in step S43, as in step S3 described in the first embodiment, the control device 110 (control unit 111) continues to eject the inert gas from the third nozzle 13 and the fourth nozzle 14. On the other hand, in step S43 , unlike step S3 described in the first embodiment, the control device 110 (control unit 111 ) does not drive the decompression unit 25 . Therefore, the internal pressure of the chamber 2 is maintained at atmospheric pressure. The internal pressure of the chamber 2 is maintained at atmospheric pressure until step S52 ( FIG. 15 ).

Next, as shown in FIG. 13, in step S44 and step S45, the control apparatus 110 (control part 111) performs the same process as step S4 and step S5 demonstrated in Embodiment 1. Since the processing of step S44 and step S45 is the same as that of step S4 and step S5 described in the first embodiment, except that the processing is performed in the atmospheric pressure state, the description is omitted. In addition, the control apparatus 110 (control part 111) opens the eighth valve V8 in step S45, and discharges DIW from the processing tank 3 via the drain line 41. The open state of the eighth valve V8 is maintained until step S50 ( FIG. 15 ).

Next, in step S46, the control apparatus 110 (control part 111) keeps blowing out the vapor|steam of IPA, and maintains the position of the holding|maintenance part 50 in the 2nd processing position. As a result, the water droplets (droplets of DIW) adhering to the substrate W are removed by the vapor of the IPA. More specifically, the water droplets adhering to the substrate W are replaced with IPA droplets.

Next, as shown in FIG. 14, in step S47 to step S49, the control apparatus 110 (control part 111) performs the same process as step S7 to step S9 demonstrated in Embodiment 1. Since the processing of step S47 to step S49 is the same as that of step S7 to step S9 described in the first embodiment except that it is performed in the atmospheric pressure state, the description is omitted.

Next, as shown in FIG. 15, in step S50, the control apparatus 110 (control part 111) performs the same process as step S10 demonstrated in Embodiment 1. FIG. The processing of step S50 is the same as that of step S10 described in the first embodiment, except that it is performed in the atmospheric pressure state, so the description is omitted.

Next, in step S51, the control apparatus 110 (control part 111) continuously discharges the vapor|steam of IPA. In addition, in step S51 , after the control device 110 (control unit 111 ) closes the eighth valve V8 , the ninth nozzle 19 and the tenth nozzle 20 discharge dIPA and store dIPA in the processing tank 3 . At this time, the internal pressure of the chamber 2 becomes atmospheric pressure. Therefore, dIPA can be easily stored in the processing tank 3 .

Next, in step S52, the control apparatus 110 (control part 111) stops the discharge of dIPA. Moreover, in step S52, the control apparatus 110 (control part 111) moves the holding part 50 to a 1st processing position, and immerses the board|substrate W in dIPA stored in the processing tank 3 (immersion process). As a result, fine particles generated by the reaction of the residue of the water repellent SMT adhering to the substrate W and IPA are removed by dIPA. In addition, in step S52, the control apparatus 110 (control part 111) keeps blowing out the vapor|steam of IPA.

After that, the control device 110 (the control unit 111 ) executes the processing from step S33 to step S36 described in the second embodiment.

In addition, in step S52, similarly to step S15, the control apparatus 110 (control part 111) can also continue to discharge dIPA. In addition, in step S52, similarly to step S15, the control device 110 (control unit 111) may swing (vibrate) the holding unit 50 in the vertical direction while maintaining the state of the substrate W immersed in dIPA.

The third embodiment of the present invention has been described above with reference to FIGS. 1 , 2 , and 10 to 15 . According to this embodiment, the cleanliness of the board|substrate W can be improved similarly to Embodiment 1 and Embodiment 2. In addition, according to the present embodiment, since the internal pressure of the chamber 2 is maintained at atmospheric pressure, after the residue of the water repellent SMT adhering to the substrate W is removed by the vapor of IPA (after step S50 ), it is not necessary to dry The processing (step S11 to step S13 described in the first embodiment) can supply dIPA into the processing tank 3 .

The embodiments of the present invention have been described above with reference to the drawings ( FIGS. 1 to 15 ). However, the present invention is not limited to the above-described embodiments, and can be implemented in various aspects without departing from the spirit of the present invention. In addition, a plurality of constituent elements disclosed in the above-described embodiments can be appropriately changed. For example, one of all the constituent elements shown in a certain embodiment may be added to the constituent elements of another embodiment, or some of all the constituent elements shown in a certain embodiment may be added. Several constituent elements are deleted from the embodiment.

In order to easily understand the present invention, the drawings show each constituent element as a subject and schematically, and the thickness, length, number, interval, etc. of each constituent element shown in the drawings may also be different from the relationship between the drawings and the drawings. actually different situations. In addition, the structure of each component shown in the said embodiment is an example, Comprising: It is not specifically limited, Various changes are possible in the range which does not deviate substantially from the effect of this invention.

For example, in the embodiment described with reference to FIGS. 1 to 15 , the cleaning process of the etching solution by DIW is performed in the processing tank 3 of the drying process unit 101, but the cleaning process of the etching solution by DIW may be performed in the same process as the drying process. The processing unit 101 is performed in processing tanks of different processing units. For example, the cleaning process of the etching solution by DIW can also be performed in the processing tank of the processing unit for etching the substrate W.

In addition, in the embodiment described with reference to FIGS. 1 to 15 , the water repellency treatment is performed in the chamber 2 of the drying processing unit 101 , but the water repelling treatment may be performed in a processing unit different from the drying processing unit 101 . performed in the chamber.

In addition, in the embodiment described with reference to FIGS. 1 to 15 , when the substrate W is immersed in dIPA, the substrate W is swung (vibrated) in the up-down direction, but the direction in which the substrate W is swung (vibrated) is not limited to the up-down direction direction. Even if the substrate W is swung (vibrated) in an arbitrary direction, the removal of particles can be promoted. For example, when the substrate W is dipped in dIPA, the substrate W may be swung (vibrated) in the lateral direction.

In addition, in the embodiment described with reference to FIGS. 1 to 15 , the substrate W is water-repellent using the vaporized water-repellent agent SMT, but the liquid water-repellent agent SMT may be stored in the processing tank. 3. The substrate W is immersed in the water repellent SMT in the treatment tank 3.

In addition, in the embodiment (Embodiment 3) described with reference to FIGS. 1 , 2 , and FIGS. 10 to 15 , the processes of Step S33 to Step S36 described in Embodiment 2 are executed after Step S52 . The processing after step S52 may be performed in a decompressed state as shown in FIG. 16 . Hereinafter, another embodiment of the present invention will be described with reference to FIG. 16 .

16 is a flowchart showing a substrate processing method according to another embodiment of the present invention. The substrate processing method (processing procedure) of the present embodiment includes steps S41 to S52 described with reference to FIGS. 12 to 15 . Moreover, as shown in FIG. 16, the substrate processing method of this embodiment further includes step S61 after step S52. In addition, the substrate processing method of the present embodiment further includes steps S17 to S21 described with reference to FIGS. 8 and 9 .

As shown in FIG. 16 , the control device 110 (control unit 111 ) may continue to spray the vapor of IPA in step S61 after executing the processing from step S41 to step S52 described in the third embodiment, while using The gas in the chamber 2 is exhausted through the exhaust line 42 by driving the decompression unit 25 . As a result, the inside of the chamber 2 is depressurized to less than the atmospheric pressure. In another embodiment, after step S61, the processing of step S17 to step 21 described in the first embodiment is performed. [Industrial Availability]

The present invention can be applied to a method and apparatus for processing a substrate.

2: Chamber 2a: cover 3: Processing tank 4: Gas supply part 5: Liquid supply part 11: The first nozzle 12: Second nozzle 13: The third nozzle 14: Fourth nozzle 15: Fifth nozzle 16: Sixth Nozzle 17: Seventh Nozzle 18: Eighth Nozzle 19: Ninth Nozzle 20: Tenth Nozzle 21: Inert gas supply source 22:IPA supply source 23: Water repellent supply source 24: DIW supply source 25: Decompression Department 31: First piping 32: Second piping 33: Third piping 34: Fourth piping 35: Fifth piping 36: Sixth piping 37: Seventh piping 41: Drain line 42: Exhaust line 50: Keeping Department 51: Keep Sticks 52: body board 100: Substrate processing device 101: Processing unit (drying processing unit) 102: Opening and closing part 103: Lifting department 110: Control device 111: Control Department 112: Memory Department H1: First heater H2: Second heater S1 to S21, S31 to S36, S41 to S52, S61: Steps SMT: water repellent V1: The first valve V2: Second valve V3: The third valve V4: Fourth valve V5: Fifth valve V6: Sixth valve V7: Seventh valve V8: Eighth valve W: substrate

1 is a schematic view showing the internal configuration of the substrate processing apparatus according to the first embodiment of the present invention. 2 is a schematic diagram showing another internal configuration of the substrate processing apparatus according to the first embodiment of the present invention. 3 is a flowchart showing a substrate processing method according to Embodiment 1 of the present invention. 4 is a flowchart showing a substrate processing method according to Embodiment 1 of the present invention. 5 is a flowchart showing a substrate processing method according to Embodiment 1 of the present invention. 6 is a flowchart showing a substrate processing method according to Embodiment 1 of the present invention. 7 is a flowchart showing a substrate processing method according to Embodiment 1 of the present invention. 8 is a flowchart showing a substrate processing method according to Embodiment 1 of the present invention. 9 is a flowchart showing a substrate processing method according to Embodiment 1 of the present invention. 10 is a flowchart showing a substrate processing method according to Embodiment 2 of the present invention. 11 is a flowchart showing a substrate processing method according to Embodiment 2 of the present invention. 12 is a flowchart showing a substrate processing method according to Embodiment 3 of the present invention. 13 is a flowchart showing a substrate processing method according to Embodiment 3 of the present invention. 14 is a flowchart showing a substrate processing method according to Embodiment 3 of the present invention. 15 is a flowchart showing a substrate processing method according to Embodiment 3 of the present invention. 16 is a flowchart showing a substrate processing method according to another embodiment of the present invention.

2: Chamber

3: Processing tank

11: The first nozzle

12: Second nozzle

13: The third nozzle

14: Fourth nozzle

15: Fifth nozzle

16: Sixth Nozzle

19: Ninth Nozzle

20: Tenth Nozzle

42: Exhaust line

S13 to S15: Steps

W: substrate

Claims (14)

A substrate processing method is used for processing a substrate, comprising: The process of storing the diluted isopropanol in the treatment tank, the aforementioned diluted isopropanol is the diluted isopropanol; and In the immersion step, the substrate subjected to the water repellency treatment is immersed in the diluted isopropyl alcohol in the treatment tank. The substrate processing method according to claim 1, further comprising the step of drying the substrate before immersing the water repellent treated substrate in the diluted isopropyl alcohol in the processing tank. The substrate processing method according to claim 1 or 2, further comprising the step of: supplying the vaporized water-repellent agent into the closed space for accommodating the processing tank, and subjecting the substrate to a water-repellent treatment . The substrate processing method according to claim 3, further comprising the following steps: immersing the substrate in the cleaning solution stored in the processing tank; Lifting the substrate from the cleaning solution; and Draining the aforementioned cleaning solution from the aforementioned processing tank; The aforementioned water repellency treatment is performed after the aforementioned cleaning liquid is drained. The substrate processing method according to claim 3, wherein after the water repellency treatment, the vaporized organic solvent is supplied into the closed space. The substrate processing method according to claim 3, wherein the inside of the closed space is depressurized and the water-repellent treatment is performed. The substrate processing method according to claim 6, further comprising the step of returning the pressure in the closed space to atmospheric pressure before storing the diluted isopropyl alcohol in the processing tank. The substrate processing method according to claim 1 or 2, further comprising the following steps: The pick-up process is to pick up the substrate from the diluted isopropanol; and In the drying step, the substrate picked up from the diluted isopropyl alcohol is dried. The substrate processing method according to claim 8, further comprising the step of: supplying the vaporized organic solvent into the closed space for accommodating the processing tank before the picking-up step; The drying step includes a step of supplying an inert gas into the closed space. The substrate processing method according to claim 8, wherein the drying step is performed by depressurizing the closed space for accommodating the processing tank. The substrate processing method according to claim 1 or 2, wherein the diluted isopropyl alcohol is supplied to the processing tank in the dipping step. The substrate processing method according to claim 1 or 2, wherein the substrate is vibrated in the dipping step. The substrate processing method according to claim 1 or 2, wherein the concentration of isopropyl alcohol in the diluted isopropyl alcohol is 0.3% or more and less than 5%. A substrate processing apparatus is used for processing substrates, and is provided with: The treatment tank is to reserve the diluted isopropanol, and the aforementioned diluted isopropanol is the diluted isopropanol; a chamber, which houses the aforementioned processing tank; a moving unit for moving the substrate between a first processing position in the processing tank and a second processing position outside the second processing tank in the chamber; and A control part controls the said moving part, and immerses the said board|substrate which has undergone the water repellency treatment in the said diluted isopropyl alcohol in the said processing tank.

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