WO2020138812A1 - Apparatus for guiding drier for semiconductor wafer - Google Patents

Apparatus for guiding drier for semiconductor wafer Download PDF

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Publication number
WO2020138812A1
WO2020138812A1 PCT/KR2019/017859 KR2019017859W WO2020138812A1 WO 2020138812 A1 WO2020138812 A1 WO 2020138812A1 KR 2019017859 W KR2019017859 W KR 2019017859W WO 2020138812 A1 WO2020138812 A1 WO 2020138812A1
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Prior art keywords
wafers
bath
wafer
semiconductor wafer
drying
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PCT/KR2019/017859
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French (fr)
Korean (ko)
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조인숙
안종팔
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조인숙
에이제이텍 주식회사
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Priority to CN201980065262.7A priority Critical patent/CN112789715A/en
Publication of WO2020138812A1 publication Critical patent/WO2020138812A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/6773Conveying cassettes, containers or carriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces

Definitions

  • the present invention relates to a guide device for a dryer for a semiconductor wafer, and more particularly, for drying a marangoni to dry a semiconductor wafer treated with a chemical solution such as a cleaning solution washed with DI water.
  • the wafer guide device When moving from the rinsing bath to the drying bath, the wafer guide device is installed on the inner circumferential surface of the rinsing bath to prevent the wafers from sticking to each other by surface tension gradients while moving off the water surface.
  • it relates to a guide device for a semiconductor wafer dryer to prevent the wafer from being damaged.
  • rinsing and drying processes are very often used.
  • impurities such as particles or natural oxide films are removed as a cleaning solution, and then a rinsing and drying process is used to remove the residual cleaning solution.
  • a rinsing and drying process is performed as a final step in an etching process or a nicking process for a predetermined material film.
  • the rinse process is a process of washing a semiconductor wafer treated with a chemical solution such as a cleaning solution with deionized water (DI water), and a drying process is a process of drying a semiconductor wafer that has been subjected to a rinse process.
  • DI water deionized water
  • the above-mentioned water spot refers to a silicon oxide film formed by dissolving oxygen in the atmosphere in deionized water remaining on the wafer and reacting the dissolved oxygen with the silicon wafer.
  • water spots are caused when the wafer is exposed to the atmosphere when the rinsed wafer is moved from a rinsing bath to a drying bath. Such water spots are generated as the time for which the wafer is exposed to the atmosphere increases.
  • a cleaning solution treatment and rinsing process is generally performed sequentially in a bath loaded with a semiconductor wafer, and then a marangoni dryer installed on the top of the bath is used. To perform the drying process.
  • IPA isopropyl alcohol
  • the wafers are immersed in a bath of diluted concentration of hydrofluoric acid. Following treatment with the acid bath, deionized water is introduced into the bath, washing the hydrofluoric acid through an overflow.
  • the conventional general semiconductor wafer drying apparatus is a wafer storage tank including a tank body defining an inner tank chamber, wherein the inner tank chamber includes a top chamber portion and a bottom chamber portion, a top portion, and a bottom portion.
  • the uppermost portion has a wafer carrier storage opening communicating with the tank chamber and is sized to accommodate a first wafer carrier with one or more semiconductor wafers on the first wafer carrier, the tank being the lower tank chamber It further comprises a liquid inlet for communicating with a portion and connecting to a source of cleaning liquid, the tank chamber having at least one overflow outlet in the upper tank chamber portion, so that the liquid from the liquid inlet is the at least one Flowing upwards to an overflow outlet, the tank having a drain outlet communicating with the lower tank chamber portion, a wafer storage tank, and located in the tank chamber and a first wafer carrier thereon one or more semiconductor wafers
  • a wafer carrier lifter arranged to receive together with the wafer carrier receiving opening, the wafer carrier lifter receiving the wafer carrier from the
  • a first drying chamber which is operable, and is connected to the tank and covers and covers the wafer carrier storage opening.
  • a wafer drying chamber movable from a position to a second drying chamber position offset from the wafer carrier receiving opening, receiving the one or more wafers on the first wafer carrier lifted to the second elevated wafer carrier delivery position
  • a second wafer carrier is placed in the wafer drying chamber operable to do so, and the wafer drying chamber is mixed when the wafers are pulled out of the liquid by the wafer carrier lifter towards the second lifted wafer transfer location.
  • a first gas inlet for connecting to a source of mixed isopropyl alcohol and nitrogen to provide the isopropyl alcohol and nitrogen to the surfaces of the wafers, the surface tension when the wafers are lifted out of the liquid
  • a wafer drying chamber mover for moving between locations, the isopropyl alcohol and nitrogen of the first carrier and wafer lifter connected to the tank chamber and when the tank is discharged to expose the first carrier and wafer lifter.
  • a valve operable to discharge liquid from the tank through the drain at a rate to at least partially dry surfaces, the wafer drying chamber mover receiving the wafer drying chamber and the second wafer carrier from the received one
  • the above wafers may be operated to move from the first drying chamber location to the second drying chamber location and from the second drying chamber location to the first drying chamber location and wafers in the second drying chamber location.
  • nitrogen to continue drying the first wafer carrier and wafer lifter following exposure of the wafer lifter and first wafer carrier with a drying chamber. It comprises at least one gas applicator disposed in the tank chamber for connection to a source of nitrogen for transport to a first wafer carrier.
  • the conventional general semiconductor wafer drying apparatus configured as described above solves the problem of depositing materials on the processed and dried wafers, such as the liquid leaving behind the material stations on the wafers due to the above-described configurations.
  • the wafer moves out of the water surface as it is lifted from the lower tank portion to the upper tank portion, the wafer is processed in multiple processes, for example, a process using a memory device with many warping 3D processes or using a wafer ( In the process of reclaim), there is a problem in that the wafers that are finely twisted or bent and stick to each other by surface tension gradients are still generated and are damaged to normal wafers.
  • Patent Document 1 Patent Application No. 10-2017-7028571, filing date (international); March 03, 2016
  • the present invention was devised to solve the above-mentioned problems, and for rinsing for drying Marangoni to dry a semiconductor wafer treated with a chemical solution such as a cleaning solution washed with DI water.
  • a chemical solution such as a cleaning solution washed with DI water.
  • it is finely twisted or bent in the process of using a memory device that uses a large 3D process with large warpage or reclaiming the wafer.
  • the wafer guide device on the inner circumferential surface of the rinse bath to prevent the wafers from sticking to each other by surface tension gradients while leaving the water surface, it is possible to prevent damage to a normal wafer due to fine twisted or curved wafers.
  • An object of the present invention is to provide a guide device for a semiconductor wafer dryer.
  • the guide device of the semiconductor wafer dryer of the present invention for achieving the above object is installed on the inner lower portion of the housing forming the exterior, the bottom can be stored when deionized water is supplied through a piped deionized water supply port It is formed so that the upper portion is opened so that the supplied deionized water is overflowed, the upper side of the outer surface is formed with a discharge portion for guiding the overflowed deionized water to the outlet side, and the rinsing bath and the rinsing bath A lifter that is positioned to lift a slotter having a plurality of seating grooves so as to seat a plurality of wafers at regular intervals on top, and the lifter located on the top of the rinse bath according to the inside of the housing.
  • the wafer is dried by spraying the isopropyl alcohol and hot nitrogen through a spray supply unit to a plurality of wafers lifted by a drying bath configured to include a drying bath, and the wafers are dried when dried.
  • a slotter having a plurality of wafers mounted on the inner circumferential surface of the rinsing bath can individually guide the plurality of wafers when moving to the drying bath side by driving a lifter.
  • Each side is characterized in that it comprises a guide member provided to face each other with a plurality of guide grooves formed at regular intervals.
  • the guide member is provided to be movable to the discharge side of the rinse bath by moving means to guide the plurality of wafers only when the slotter on which a plurality of wafers are seated moves through the lifter to the drying bath side. It is characterized by.
  • the guide device of the dryer for a semiconductor wafer when the guide member is installed on the inner surface of the bath for rinsing, it is moved while being lifted from the bath for rinsing to drying bath for drying marangoni.
  • the small twisted or bent wafer and the normal wafers are individually guided and raised, so that they do not stick to each other by the surface tension gradient, so that the micro twisting or bending It has an effect of preventing damage to a normal wafer due to the wafer.
  • FIG. 1 is a perspective view showing a dryer for a semiconductor wafer in which a guide device for a semiconductor wafer dryer according to the present invention is installed.
  • FIG. 2 is a perspective view showing a state in which the guide device of the dryer for a semiconductor wafer according to the present invention is installed in a rinse bath.
  • FIG. 3 is a view showing a slotter and a lifter of a semiconductor wafer dryer equipped with a guide device for a semiconductor wafer dryer according to the present invention.
  • FIG. 4 is a view showing a drying bath for a semiconductor wafer dryer equipped with a guide device for a semiconductor wafer dryer according to the present invention.
  • FIG. 5 is a cross-sectional view showing a state in which the guide device of the dryer for a semiconductor wafer according to the present invention is installed in a bath for rinsing.
  • FIG. 6 is a sectional view showing a state in which the guide device of the dryer for a semiconductor wafer according to the present invention is connected to a moving means.
  • the guide device 100 of the dryer for a semiconductor wafer according to the present invention is installed at an inner lower portion of a housing 11 forming an exterior, and deionized through a deionized water supply port 12a piped to the bottom.
  • a deionized water supply port 12a piped to the bottom.
  • water (DI) When water (DI) is supplied, it is formed to be stored, and the upper part is opened so that the supplied deionized water (DI) is overflowed, and the overflowed deionized water (DI) is discharged to the outlet (12b) side at the upper side of the outer surface.
  • a rinsing bath 12 provided with a discharge portion 12c for guiding is provided, and a plurality of wafers positioned at the rinsing bath 12 so that a plurality of wafers can be seated at regular intervals.
  • the lifter 14 is provided so as to be able to lift the slotter 13 in which the seating groove is formed, and the lifter 14 is located above the bath 12 for rinsing as it is installed inside the housing 11.
  • IPA isopropyl alcohol
  • a slotter installed on the inner circumferential surface of the rinse bath 12 to prevent the wafers from sticking to each other by the surface tension gradient when drying the above-mentioned wafers through the drying dryer 10 ( When 13) is moved to the drying bath 15 side by the drive of the lifter 14, a plurality of guide grooves 111 are formed at regular intervals on each side so that each of the plurality of wafers can be individually guided. It comprises a guide member 110 provided to face.
  • the guide member 110 of the moving means 130 to guide the plurality of wafers only when the plurality of wafer-mounted slotter 13 is moved to the drying bath 15 through the lifter 14 side.
  • the rinse bath 12 is provided to be movable to the discharge portion (12b) side.
  • the guide member 110 of the guide device of the semiconductor wafer dryer according to the present invention is formed in a plate shape of a square shape so as to be respectively installed on both inner sides facing each other of the rinse bath 12, each surface When the wafer leaves the surface of deionized water (DI), it responds to the seating groove formed in the slotter 13 so as to rise vertically while maintaining a spaced apart from each other without sticking to each other by a surface tension gradient. It is provided with a plurality of guide grooves 111 are formed at regular intervals in the longitudinal direction.
  • the moving means 130 is fixedly installed on the outer surface of the discharge portion of the rinse bath 12 and is provided with a pneumatic or hydraulic fluid that can be introduced and discharged under control of a control unit, and a movable cylinder 131 and the movable cylinder ( 131) one end is inserted and the other end is fixed to the guide member 110 located on both inner sides of the bath 12 for rinsing through a hole for movement 133 drilled to communicate with the discharge portion 12b, the moving cylinder It is composed of a connecting member (135) provided to move the guide member (110) toward the discharge portion (12b) to correspond to the driving (131).
  • the guide device of the dryer for a semiconductor wafer according to the present invention configured as described above is installed at a position facing each other on the inner circumferential surface of the rinse bath 12, is stored in the rinse bath 12 and is overflowed to the discharge section 12b side.
  • DI deionized water
  • the attached drawing is fixed to the seating groove as shown in FIGS. 1 to 5.
  • the slotter 13 in which a plurality of wafers are seated at intervals is raised to move to the drying bath 15 side.
  • the plurality of wafers are guided to the guide grooves 111 of the guide member 110 installed on both inner sides of the rinse bath 12, respectively, and ascend.
  • the plurality of wafers are guided and ascended along the guide grooves 111 of the guide member 110 until they exit the surface of the deionized water (DI), so that they are different from each other by a surface tension gradient. It will not stick.
  • DI deionized water

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Abstract

The present invention relates to an apparatus for guiding a drier for a semiconductor wafer. When, in order to dry a semiconductor wafer, the semiconductor wafer is processed with a chemical solution such as a cleaning solution washed with DI water and moved from a rinsing bath to a drying bath for Marangoni drying while ascending/descending, a wafer guide device is provided on the internal circumferential surface of the rinsing bath so as to prevent wafers from sticking to each other due to a surface tension gradient while the wafers are out of the water surface, wherein the wafers are finely twisted or bent during a process of using a memory device, the process including many 3D processes having a large warpage, or a process of reclaiming the wafer. Therefore, damage to normal wafers due to fine twisting or bending of the wafers may be prevented.

Description

반도체 웨이퍼용 건조기의 가이드장치Guide device for semiconductor wafer dryer
본 발명은 반도체 웨이퍼용 건조기의 가이드장치에 관한 것으로서, 보다 상게하게는 탈이온수(DI water)로 세척한 세정 용액 등의 화학 용액이 처리된 반도체 웨이퍼를 건조시키기 위해 마란고니(Marangoni) 건조를 위해 린스용 배쓰(rinsing bath)에서 건조용 배쓰(drying bath)로 승강되면서 이동될 때, 웨이퍼가 수면을 벗어나면서 표면 장력 그레디언트(gradient)에 의해 서로 달라붙는 것을 방지하도록 린스용 배쓰 내주면에 웨이퍼 가이드장치를 구성함으로써, 웨이퍼가 손상되는 것을 방지할 수 있도록 한 반도체 웨이퍼용 건조기의 가이드장치에 관한 것이다.The present invention relates to a guide device for a dryer for a semiconductor wafer, and more particularly, for drying a marangoni to dry a semiconductor wafer treated with a chemical solution such as a cleaning solution washed with DI water. When moving from the rinsing bath to the drying bath, the wafer guide device is installed on the inner circumferential surface of the rinsing bath to prevent the wafers from sticking to each other by surface tension gradients while moving off the water surface. By configuring the, it relates to a guide device for a semiconductor wafer dryer to prevent the wafer from being damaged.
일반적으로 반도체를 제조하는 전체 공정 중에, 린스 및 건조 공정은 아주 많이 사용된다. 예컨대, 세정 공정에서 세정액으로 파티클 등의 불순물이나 자연 산화막을 제거한 다음, 잔류 세정액을 제거하기 위하여 린스 및 건조 공정을 사용한다. In general, during the entire process of manufacturing a semiconductor, rinsing and drying processes are very often used. For example, in the cleaning process, impurities such as particles or natural oxide films are removed as a cleaning solution, and then a rinsing and drying process is used to remove the residual cleaning solution.
그리고, 소정의 물질막에 대한 식각 공정이나 애칭 공정 등에서도 마지막 단계로서 린스 및 건조 공정을 실시한다. 린스 공정은 세정 용액 등의 화학 용액이 처리된 반도체 웨이퍼를 탈이온수(DI water)로 세척하는 공정이며, 건조 공정은 린스 공정을 거친 반도체 웨이퍼를 건조하는 공정이다.In addition, a rinsing and drying process is performed as a final step in an etching process or a nicking process for a predetermined material film. The rinse process is a process of washing a semiconductor wafer treated with a chemical solution such as a cleaning solution with deionized water (DI water), and a drying process is a process of drying a semiconductor wafer that has been subjected to a rinse process.
상기한 린스 및 건조 공정 중에는 실리콘 웨이퍼 상에 소위 물반점(water mark)이 발생하지 않도록 하는 것이 중요하다. During the rinsing and drying process described above, it is important not to cause so-called water marks on the silicon wafer.
상기한 물반점이란, 웨이퍼에 잔류하는 탈이온수에 대기 중의 산소가 용해되고, 그 용해된 산소가 실리콘 웨이퍼와 반응하여 생기는 실리콘 산화막을 가리킨다. The above-mentioned water spot refers to a silicon oxide film formed by dissolving oxygen in the atmosphere in deionized water remaining on the wafer and reacting the dissolved oxygen with the silicon wafer.
따라서, 물반점은 린스 처리된 웨이퍼를 린스용 배쓰(rinsing bath)에서 건조용 배쓰(drying bath)로 이동시킬 때, 웨이퍼가 대기에 노출됨으로 인하여 발생한다. 이러한 물반점은 웨이퍼가 대기에 노출되는 시간이 길어 질수록 많이 생긴다.Therefore, water spots are caused when the wafer is exposed to the atmosphere when the rinsed wafer is moved from a rinsing bath to a drying bath. Such water spots are generated as the time for which the wafer is exposed to the atmosphere increases.
웨이퍼에 물반점이 생기는 상기한 문제점을 해결하기 위해서는, 일반적으로 반도체 웨이퍼가 로딩되어 있는 배쓰에서 세정액 처리 및 린스 공정을 순차적으로 수행한 다음, 상기 배쓰의 상부에 설치된 마란고니 건조기(marangoni dryer)를 사용하여 건조 공정을 실시한다.In order to solve the above-mentioned problem that water spots are generated on the wafer, a cleaning solution treatment and rinsing process is generally performed sequentially in a bath loaded with a semiconductor wafer, and then a marangoni dryer installed on the top of the bath is used. To perform the drying process.
상기한 마란고니 건조는 표면 장력 그래디언트 (gradient) 힘들을 기반으로 한다. 이 기법에서, 물보다 더 낮은 표면 장력을 가진 이소프로필 알콜(IPA:isopropyl alcohol)과 같은 휘발성 유기 화합물이 기판 반도체 웨이퍼 근방에, 그 기판 웨이퍼가 물로부터 느리게 회수될 때에 증기의 모습으로 도입된다. The above described Marangoni drying is based on surface tension gradient forces. In this technique, volatile organic compounds such as isopropyl alcohol (IPA) having a surface tension lower than that of water are introduced in the form of vapor when the substrate wafer is slowly recovered from water in the vicinity of the substrate semiconductor wafer.
작은 양의 알콜 증기가 계속하여 보충되는 물 메니스커스(water meniscus)와 접촉하게 되기 때문에, 그 알콜 증기는 그 물로 흡수되어 표면 장력 그레디언트(gradient)를 생성한다. 이 그레디언트는 상기 메니스커스가 부분적으로 수축하도록 하고 그리고 명백한 유한의 흐름 각도를 나타낸다. Because a small amount of alcohol vapor comes into contact with the water meniscus, which is constantly replenished, the alcohol vapor is absorbed into the water and creates a surface tension gradient. This gradient causes the meniscus to partially contract and exhibits an apparent finite flow angle.
이것은 얇은 물 박막이 기판 표면으로부터 흐르도록 하며 그리고 그것을 건조하게 한다. 이 흐름은 비-휘발성 오염물들 및 부유 운반된(entrained) 입자들을 제거하는데 있어서 또한 도움을 줄 것이다.This allows a thin film of water to flow from the substrate surface and dry it. This flow will also help in removing non-volatile contaminants and suspended entrained particles.
알려진 마란고니 건조기에서, 반도체 웨이퍼들은 탈이온화된 물(DI 물)에 잠긴다. 밀폐 커버 또는 뚜껑이 상기 잠겨진 웨이퍼들을 포함하는 욕조 위에 위치하여, 밀봉된 프로세스 챔버를 생성한다. 공기가 질소가스와 함께 그 챔버로부터 제거되며 그리고 IPA(isopropyl alcohol) 기포기는 IPA 증기를 산출하며, 그 IPA 증기는 질소가스와 함께 상기 챔버로 인입된다. In a known Marangoni dryer, semiconductor wafers are immersed in deionized water (DI water). A sealed cover or lid is placed over the bath containing the submerged wafers, creating a sealed process chamber. Air is removed from the chamber with nitrogen gas and an IPA (isopropyl alcohol) bubbler produces IPA vapor, which is introduced into the chamber along with nitrogen gas.
다른 알려진 접근 방식에서, 상기 웨이퍼들은 플루오르화 수소산의 희석된 농도의 욕조 내에 잠긴다. 상기 산욕조에 의한 처리에 이어서, 탈이온화된 물이 상기 욕조로 도입되어, 오버플로우를 통해서 상기 플루오르화 수소산을 씻어낸다. In another known approach, the wafers are immersed in a bath of diluted concentration of hydrofluoric acid. Following treatment with the acid bath, deionized water is introduced into the bath, washing the hydrofluoric acid through an overflow.
위에서 설명된 마란고니 건조가 그 후에 수행된다.The drying of the marangoni described above is then carried out.
마란고니 건조가 없는 경우에, 작은 크기의 반도체 웨이퍼 피처들(예를 들면, 30 나노미터 피처들)상의 DI 물의 표면 장력은 이 표면 장력으로 인한 점착성의, 당기는, 구부리는 또는 절단하는 구조들에 의한 피처 손상을 초래할 수 있다.In the absence of Marangoni drying, the surface tension of DI water on small-sized semiconductor wafer features (e.g., 30 nanometer features) is due to the sticky, pulling, bending or cutting structures resulting from this surface tension. This may cause damage to the features.
즉, 마란고니 건조를 통하여 피처 손상이 초래하는 것을 방지할 수 있다.That is, it is possible to prevent the feature from being caused by drying the marangoni.
이러한 점을 감안하여, 특허출원번호 10-2017-7028571호에 웨이퍼 건조기 장치 및 방법이 게시된 바 있다.In view of this, a wafer dryer apparatus and method have been published in Patent Application No. 10-2017-7028571.
살펴보면, 상기한 종래의 일반적인 반도체 웨이퍼 건조 장치는, 내부 탱크 챔버를 한정한 탱크 몸체를 포함하는 웨이퍼 수납 탱크로서, 상기 내부 탱크 챔버는 상단 챔버 부분 및 하단 챔버 부분, 제일 윗 부분 그리고 바닥 부분을 포함하며, 제일 윗 부분은 상기 탱크 챔버와 통하는 웨이퍼 캐리어 수납 개방부를 구비하며 제1 웨이퍼 캐리어를 그 제1 웨이퍼 캐리어 상의 하나 이상의 반도체 웨이퍼들과 함께 수납하기 위해 크기 조절되며, 상기 탱크는 상기 하단 탱크 챔버 부분과 통하며 클리닝 액체의 소스에 연결하기 위한 액체 입구를 더 포함하며, 상기 탱크 챔버는 상기 상단 탱크 챔버 부분에 적어도 하나의 오버플로우 배출구를 구비하여, 상기 액체 입구로부터의 액체가 상기 적어도 하나의 오버플로우 배출구로 위로 향하여 흐르게 하며, 상기 탱크는 상기 하단 탱크 챔버 부분과 통하는 드레인 배출구를 구비한, 웨이퍼 수납 탱크와, 상기 탱크 챔버 내에 위치하며 그리고 제1 웨이퍼 캐리어를 그 위의 하나 이상의 반도체 웨이퍼들과 함께 상기 웨이퍼 캐리어 수납 개방부를 통해 수납하기 위해 배치된 웨이퍼 캐리어 리프터로서, 상기 웨이퍼 캐리어 리프터는 상기 제1 웨이퍼 캐리어 및 그 위에 있는 상기 하나 이상의 반도체 웨이퍼들을 제1 하단 웨이퍼 캐리어 위치로부터 상기 웨이퍼 캐리어 수납 개방부 위의 제2 거양된 웨이퍼 캐리어 전달 위치까지 들어 올리고 낮추도록 동작할 수 있으며, 상기 제1 하단 웨이퍼 캐리어 위치에서 상기 제1 웨이퍼 캐리어 및 그 위의 상기 하나 이상의 반도체 웨이퍼들이 상기 내부 탱크 챔버 내 액체에 잠길 때에, 상기 웨이퍼 캐리어 리프터는 상기 제1 웨이퍼 캐리어를 상기 하나 이상의 반도체 웨이퍼들과 함께 제어된 웨이퍼 리프팅 속도로 상기 제1 웨이퍼 캐리어 위치로부터 상기 제2 거양된 웨이퍼 캐리어 전달 위치로 들어올리도록 또한 동작할 수 있는, 웨이퍼 캐리어 리프터와, 상기 탱크에 연결되며 상기 웨이퍼 캐리어 수납 개방부를 덮고 커버하는 제1 건조 챔버 위치로부터, 상기 웨이퍼 캐리어 수납 개방부로부터 오프셋된 제2 건조 챔버 위치로 이동가능한 웨이퍼 건조 챔버로서, 상기 제2 거양된 웨이퍼 캐리어 전달 위치로 들어 올려진 상기 제1 웨이퍼 캐리어 상의 상기 하나 이상의 웨이퍼들을 수납하도록 동작할 수 있는 상기 웨이퍼 건조 챔버내에 제2 웨이퍼 캐리어가 놓여지며, 상기 웨이퍼 건조 챔버는 상기 웨이퍼들이 상기 웨이퍼 캐리어 리프터에 의해 상기 제2 거양된 웨이퍼 전달 위치로 향하여 상기 액체 밖으로 끌어 올려질 때에 혼합된 이소프로필 알콜 및 질소를 상기 웨이퍼들의 표면들로 제공하기 위해서, 혼합된 이소프로필 알콜 및 질소의 소스에 연결하기 위한 제1 가스 입구를 포함하며, 상기 웨이퍼들이 상기 액체 밖으로 들어 올려질 때에 표면 장력 그레디언트 건조에 의해 상기 웨이퍼들의 표면들을 적어도 부분적으로 건조시키기 위해 상기 이소프로필 알콜 및 질소 혼합물 내에 충분한 IPA가 존재하는, 웨이퍼 건조 챔버와, 상기 웨이퍼 건조 챔버를 상기 제1 건조 챔버 위치와 제2 건조 챔버 위치 사이에서 이동시키기 위한 웨이퍼 건조 챔버 이동기와, 상기 탱크 챔버에 연결되며 그리고 상기 제1 캐리어 및 웨이퍼 리프터를 노출시키기 위해 탱크가 배출될 때에 상기 이소프로필 알콜 및 질소가 상기 제1 캐리어 및 웨이퍼 리프터의 표면들을 적어도 부분적으로 건조시키는 속도로 상기 드레인을 통해 상기 탱크로부터 액체를 배출하도록 동작할 수 있는 밸브를 포함하며, 상기 웨이퍼 건조 챔버 이동기는 상기 웨이퍼 건조 챔버 및 상기 제2 웨이퍼 캐리어를 상기 수납된 하나 이상의 웨이퍼들과 함께 상기 제1 건조 챔버 위치로부터 상기 제2 건조 챔버 위치로 그리고 상기 제2 건조 챔버 위치로부터 상기 제1 건조 챔버 위치로 이동시키도록 동작할 수 있으며 그리고 상기 제2 건조 챔버 위치 내 웨이퍼 건조 챔버와 함께 웨이퍼 리프터 및 제1 웨이퍼 캐리어의 노출에 이어서 상기 제1 웨이퍼 캐리어 및 웨이퍼 리프터 건조를 계속하기 위해 질소를 상기 제1 웨이퍼 캐리어로 운반하기 위해서 질소의 소스에 연결시키기 위해 상기 탱크 챔버 내에 배치된 적어도 하나의 가스 애플리케이터(applicator)를 포함하는 것으로 구성된다.Looking at the above, the conventional general semiconductor wafer drying apparatus is a wafer storage tank including a tank body defining an inner tank chamber, wherein the inner tank chamber includes a top chamber portion and a bottom chamber portion, a top portion, and a bottom portion. The uppermost portion has a wafer carrier storage opening communicating with the tank chamber and is sized to accommodate a first wafer carrier with one or more semiconductor wafers on the first wafer carrier, the tank being the lower tank chamber It further comprises a liquid inlet for communicating with a portion and connecting to a source of cleaning liquid, the tank chamber having at least one overflow outlet in the upper tank chamber portion, so that the liquid from the liquid inlet is the at least one Flowing upwards to an overflow outlet, the tank having a drain outlet communicating with the lower tank chamber portion, a wafer storage tank, and located in the tank chamber and a first wafer carrier thereon one or more semiconductor wafers A wafer carrier lifter arranged to receive together with the wafer carrier receiving opening, the wafer carrier lifter receiving the wafer carrier from the first wafer carrier and the one or more semiconductor wafers thereon from a first lower wafer carrier position. It can be operated to lift and lower the second raised wafer carrier transfer position over the opening, wherein the first wafer carrier and the one or more semiconductor wafers thereon in the first lower wafer carrier position are within the inner tank chamber. When submerged in liquid, the wafer carrier lifter also lifts the first wafer carrier from the first wafer carrier location to the second elevated wafer carrier transfer location at a controlled wafer lifting speed with the one or more semiconductor wafers. A first drying chamber, which is operable, and is connected to the tank and covers and covers the wafer carrier storage opening. A wafer drying chamber movable from a position to a second drying chamber position offset from the wafer carrier receiving opening, receiving the one or more wafers on the first wafer carrier lifted to the second elevated wafer carrier delivery position A second wafer carrier is placed in the wafer drying chamber operable to do so, and the wafer drying chamber is mixed when the wafers are pulled out of the liquid by the wafer carrier lifter towards the second lifted wafer transfer location. A first gas inlet for connecting to a source of mixed isopropyl alcohol and nitrogen to provide the isopropyl alcohol and nitrogen to the surfaces of the wafers, the surface tension when the wafers are lifted out of the liquid A wafer drying chamber in which there is sufficient IPA in the isopropyl alcohol and nitrogen mixture to at least partially dry the surfaces of the wafers by gradient drying, and the wafer drying chamber in the first drying chamber position and the second drying chamber A wafer drying chamber mover for moving between locations, the isopropyl alcohol and nitrogen of the first carrier and wafer lifter connected to the tank chamber and when the tank is discharged to expose the first carrier and wafer lifter. And a valve operable to discharge liquid from the tank through the drain at a rate to at least partially dry surfaces, the wafer drying chamber mover receiving the wafer drying chamber and the second wafer carrier from the received one The above wafers may be operated to move from the first drying chamber location to the second drying chamber location and from the second drying chamber location to the first drying chamber location and wafers in the second drying chamber location. Recall nitrogen to continue drying the first wafer carrier and wafer lifter following exposure of the wafer lifter and first wafer carrier with a drying chamber. It comprises at least one gas applicator disposed in the tank chamber for connection to a source of nitrogen for transport to a first wafer carrier.
그러나, 이와 같이 구성된 종래의 일반적인 반도체 웨이퍼 건조 장치는, 상기한 구성들로 인해 웨이퍼들 상에 물자국들을 뒤에 남기는 액체처럼, 처리되어 건조된 웨이퍼들 상에 물질들이 침전되는 것에 대한 문제점은 해소될 수 있으나, 여전히, 하단탱크부에서 상단탱크부로 승강되면서 웨이퍼가 수면을 벗어날 때, 상기 웨이퍼가 여러 공정 예를 들면, 휨이 큰 3D 공정이 많은 메모리 디바이스(memory device)사용 공정 또는 웨이퍼를 재생(reclaim)하는 과정에서 미세한 비틀림 또는 구부림된 상기 웨이퍼가 표면 장력 그레디언트(gradient)에 의해 서로 달라붙는 문제가 여전히 발생되어 정상적인 웨이퍼까지 손상되는 문제점이 있었다.However, the conventional general semiconductor wafer drying apparatus configured as described above solves the problem of depositing materials on the processed and dried wafers, such as the liquid leaving behind the material stations on the wafers due to the above-described configurations. However, still, when the wafer moves out of the water surface as it is lifted from the lower tank portion to the upper tank portion, the wafer is processed in multiple processes, for example, a process using a memory device with many warping 3D processes or using a wafer ( In the process of reclaim), there is a problem in that the wafers that are finely twisted or bent and stick to each other by surface tension gradients are still generated and are damaged to normal wafers.
(특허문헌 1) 특허출원번호 10-2017-7028571호, 출원일(국제);2016년03월03일(Patent Document 1) Patent Application No. 10-2017-7028571, filing date (international); March 03, 2016
이에, 본 발명은 상술한 문제점을 해소하기 위해 안출된 것으로서, 탈이온수(DI water)로 세척한 세정 용액 등의 화학 용액이 처리된 반도체 웨이퍼를 건조시키기 위해 마란고니(Marangoni) 건조를 위해 린스용 배쓰(rinsing bath)에서 건조용 배쓰(drying bath)로 승강되면서 이동될 때, 휨이 큰 3D 공정이 많은 메모리 디바이스(memory device)사용 공정 또는 웨이퍼를 재생(reclaim)하는 과정에서 미세한 비틀림 또는 구부림된 상기 웨이퍼가 수면을 벗어나면서 표면 장력 그레디언트(gradient)에 의해 서로 달라붙는 것을 방지하도록 린스용 배쓰 내주면에 웨이퍼 가이드장치를 구성함으로써, 미세한 비틀림 또는 구부림된 웨이퍼로 인해 정상적인 웨이퍼까지 손상되는 것을 방지할 수 있도록 한 반도체 웨이퍼용 건조기의 가이드장치를 제공하는 것에 그 목적이 있다.Thus, the present invention was devised to solve the above-mentioned problems, and for rinsing for drying Marangoni to dry a semiconductor wafer treated with a chemical solution such as a cleaning solution washed with DI water. When moving from the bath to the drying bath, it is finely twisted or bent in the process of using a memory device that uses a large 3D process with large warpage or reclaiming the wafer. By configuring the wafer guide device on the inner circumferential surface of the rinse bath to prevent the wafers from sticking to each other by surface tension gradients while leaving the water surface, it is possible to prevent damage to a normal wafer due to fine twisted or curved wafers. An object of the present invention is to provide a guide device for a semiconductor wafer dryer.
본 발명의 다른 목적들은 기술이 진행되면서 명확해질 것이다.Other objects of the present invention will become apparent as the technology progresses.
상술한 목적을 달성하기 위한 본 발명 반도체 웨이퍼용 건조기의 가이드장치는, 외관을 형성하는 하우징의 내측 하부에 설치되되, 바닥에는 배관된 탈이온화 물 공급구를 통하여 탈이온화 물이 공급되면 저장시킬 수 있도록 형성되고, 상부는 공급된 탈이온화 물이 오버플러우되도록 개구되며, 외측면 상부에는 오버플러우된 탈이온화 물을 배출구측으로 안내시키기 위한 배출부가 형성되어 구비되는 린스용 배쓰와, 상기 린스용 배쓰에 위치되어 상부에 복수의 웨이퍼를 일정 간격으로 안착시킬 수 있도록 다수의 안착홈이 형성된 슬롯터를 리프팅시킬 수 있도록 구비되는 리프터와, 상기 하우징의 내부에 설치됨에 따른 린스용 배쓰 상부에 위치되어 상기 리프터에 의해 리프팅된 복수의 웨이퍼측으로 스프레이공급부를 통하여 이소 프로필 알코올 및 고온의 질소를 스프레이시켜 건조시킬 수 있도록 구비되는 건조용 배쓰를 포함하여 구성된 반도체 웨이퍼용 건조기를 통하여, 상기 웨이퍼들을 마란고니 건조시 표면 장력 그레디언트에 의해 서로 달라붙는 것을 방지하도록 상기 린스용 배쓰의 내주면에 설치되어 복수의 웨이퍼가 안착된 슬롯터가 리프터의 구동에 의해 건조용 배쓰측으로 이동시 상기 복수의 웨이퍼를 각각 개별적으로 안내시킬 수 있도록 각 일면에는 안내용 홈이 일정 간격으로 다수 형성되어 서로에 대하여 마주보도록 구비된 안내부재를 포함하는 것을 특징으로 한다.The guide device of the semiconductor wafer dryer of the present invention for achieving the above object is installed on the inner lower portion of the housing forming the exterior, the bottom can be stored when deionized water is supplied through a piped deionized water supply port It is formed so that the upper portion is opened so that the supplied deionized water is overflowed, the upper side of the outer surface is formed with a discharge portion for guiding the overflowed deionized water to the outlet side, and the rinsing bath and the rinsing bath A lifter that is positioned to lift a slotter having a plurality of seating grooves so as to seat a plurality of wafers at regular intervals on top, and the lifter located on the top of the rinse bath according to the inside of the housing. The wafer is dried by spraying the isopropyl alcohol and hot nitrogen through a spray supply unit to a plurality of wafers lifted by a drying bath configured to include a drying bath, and the wafers are dried when dried. In order to prevent sticking to each other by a tension gradient, a slotter having a plurality of wafers mounted on the inner circumferential surface of the rinsing bath can individually guide the plurality of wafers when moving to the drying bath side by driving a lifter. Each side is characterized in that it comprises a guide member provided to face each other with a plurality of guide grooves formed at regular intervals.
또한, 상기한 안내부재는 복수의 웨이퍼가 안착된 슬롯터가 리프터를 통하여 건조용 배쓰측으로 이동시에만 상기 복수의 웨이퍼를 안내하도록 이동수단의 의해 상기 린스용 배쓰의 배출부측으로 이동가능하게 구비된 것을 특징으로 한다. In addition, the guide member is provided to be movable to the discharge side of the rinse bath by moving means to guide the plurality of wafers only when the slotter on which a plurality of wafers are seated moves through the lifter to the drying bath side. It is characterized by.
상기한 바와 같이 본 발명에 따른 반도체 웨이퍼용 건조기의 가이드장치에 따르면, 린스용 배쓰의 내측면에 안내부재가 설치됨으로 인해, 마란고니 건조를 위해 린스용 배쓰에서 건조용 배쓰로 승강되면서 이동될 때, 휨이 큰 3D 공정이 많은 메모리 디바이스사용 공정 또는 웨이퍼를 재생하는 과정에서 미세한 비틀림 또는 구부림된 웨이퍼와 정상적인 웨이퍼들이 각각 개별적으로 안내되면서 상승되므로 표면 장력 그레디언트에 의해 서로 달라붙지 않아 미세한 비틀림 또는 구부림된 웨이퍼로 인해 정상적인 웨이퍼까지 손상되는 것을 방지할 수 있는 효과가 있다.According to the guide device of the dryer for a semiconductor wafer according to the present invention as described above, when the guide member is installed on the inner surface of the bath for rinsing, it is moved while being lifted from the bath for rinsing to drying bath for drying marangoni. In the process of using a memory device with a large 3D process with large warpage or in the process of reproducing a wafer, the small twisted or bent wafer and the normal wafers are individually guided and raised, so that they do not stick to each other by the surface tension gradient, so that the micro twisting or bending It has an effect of preventing damage to a normal wafer due to the wafer.
도 1은 본 발명에 따른 반도체 웨이퍼용 건조기의 가이드장치가 설치된 반도체 웨이퍼용 건조기를 도시한 사시도이다.1 is a perspective view showing a dryer for a semiconductor wafer in which a guide device for a semiconductor wafer dryer according to the present invention is installed.
도 2는 본 발명에 따른 반도체 웨이퍼용 건조기의 가이드장치가 린스용 배쓰에 설치된 상태를 도시한 사시도이다.2 is a perspective view showing a state in which the guide device of the dryer for a semiconductor wafer according to the present invention is installed in a rinse bath.
도 3은 본 발명에 따른 반도체 웨이퍼용 건조기의 가이드장치가 설치된 반도체 웨이퍼용 건조기의 슬롯터와 리프터를 도시한 도면이다.3 is a view showing a slotter and a lifter of a semiconductor wafer dryer equipped with a guide device for a semiconductor wafer dryer according to the present invention.
도 4는 본 발명에 따른 반도체 웨이퍼용 건조기의 가이드장치가 설치된 반도체 웨이퍼용 건조기의 건조용 배쓰를 도시한 도면이다.FIG. 4 is a view showing a drying bath for a semiconductor wafer dryer equipped with a guide device for a semiconductor wafer dryer according to the present invention.
도 5는 본 발명에 따른 반도체 웨이퍼용 건조기의 가이드장치가 린스용 배쓰에 설치된 상태를 도시한 단면도이다.5 is a cross-sectional view showing a state in which the guide device of the dryer for a semiconductor wafer according to the present invention is installed in a bath for rinsing.
도 6은 본 발명에 따른 반도체 웨이퍼용 건조기의 가이드장치가 이동수단에 연결된 상태를 도시한 단면도이다.6 is a sectional view showing a state in which the guide device of the dryer for a semiconductor wafer according to the present invention is connected to a moving means.
이하에서는, 본 발명에 따른 반도체 웨이퍼용 건조기의 가이드장치의 일실시 예를 들어 상세하게 설명한다.Hereinafter, an embodiment of the guide device of the dryer for a semiconductor wafer according to the present invention will be described in detail.
우선, 도면들 중, 동일한 구성요소 또는 부품들은 가능한 한 동일한 참조부호를 나타내고 있음에 유의하여야 한다. 본 발명을 설명함에 있어, 관련된 공지기능 혹은 구성에 대한 구체적인 설명은 발명의 요지를 모호하지 않게 하기 위하여 생략한다. First, it should be noted that, among the drawings, the same components or parts indicate the same reference numerals as possible. In describing the present invention, detailed descriptions of related known functions or configurations are omitted so as not to obscure the subject matter of the invention.
도시된 바와 같이 본 발명에 따른 반도체 웨이퍼용 건조기의 가이드장치(100)는 외관을 형성하는 하우징(11)의 내측 하부에 설치되되, 바닥에는 배관된 탈이온화 물 공급구(12a)를 통하여 탈이온화 물(DI)이 공급되면 저장시킬 수 있도록 형성되고, 상부는 공급된 탈이온화 물(DI)이 오버플러우되도록 개구되며, 외측면 상부에는 오버플러우된 탈이온화 물(DI)을 배출구(12b)측으로 안내시키기 위한 배출부(12c)가 형성되어 구비되는 린스용 배쓰(rinsing bath)(12)와, 상기 린스용 배쓰(12)에 위치되어 상부에 복수의 웨이퍼를 일정 간격으로 안착시킬 수 있도록 다수의 안착홈이 형성된 슬롯터(13)를 리프팅시킬 수 있도록 구비되는 리프터(14)와, 상기 하우징(11)의 내부에 설치됨에 따른 린스용 배쓰(12) 상부에 위치되어 상기 리프터(14)에 의해 리프팅된 복수의 웨이퍼측으로 스프레이공급부(미도시함)를 통하여 이소 프로필 알코올(IPA) 및 고온의 질소를 스프레이시켜 건조시킬 수 있도록 구비되는 건조용 배쓰(drying bath)(15)를 포함하여 구성된 반도체 웨이퍼용 건조기(10)를 통하여 상기한 웨이퍼들을 마란고니 건조시 표면 장력 그레디언트(gradient)에 의해 서로 달라붙는 것을 방지하도록 상기 린스용 배쓰(12)의 내주면에 설치되어 복수의 웨이퍼가 안착된 슬롯터(13)가 리프터(14)의 구동에 의해 건조용 배쓰(15)측으로 이동시 상기 복수의 웨이퍼를 각각 개별적으로 안내시킬 수 있도록 각 일면에는 안내용 홈(111)이 일정 간격으로 다수 형성되어 서로에 대하여 마주보도록 구비된 안내부재(110)를 포함하여 이루어진다.As shown, the guide device 100 of the dryer for a semiconductor wafer according to the present invention is installed at an inner lower portion of a housing 11 forming an exterior, and deionized through a deionized water supply port 12a piped to the bottom. When water (DI) is supplied, it is formed to be stored, and the upper part is opened so that the supplied deionized water (DI) is overflowed, and the overflowed deionized water (DI) is discharged to the outlet (12b) side at the upper side of the outer surface. A rinsing bath 12 provided with a discharge portion 12c for guiding is provided, and a plurality of wafers positioned at the rinsing bath 12 so that a plurality of wafers can be seated at regular intervals. The lifter 14 is provided so as to be able to lift the slotter 13 in which the seating groove is formed, and the lifter 14 is located above the bath 12 for rinsing as it is installed inside the housing 11. A semiconductor wafer including a drying bath 15 provided to be dried by spraying isopropyl alcohol (IPA) and hot nitrogen through a spray supply unit (not shown) to a plurality of lifted wafers. A slotter installed on the inner circumferential surface of the rinse bath 12 to prevent the wafers from sticking to each other by the surface tension gradient when drying the above-mentioned wafers through the drying dryer 10 ( When 13) is moved to the drying bath 15 side by the drive of the lifter 14, a plurality of guide grooves 111 are formed at regular intervals on each side so that each of the plurality of wafers can be individually guided. It comprises a guide member 110 provided to face.
여기서, 상기한 안내부재(110)는 복수의 웨이퍼가 안착된 슬롯터(13)가 리프터(14)를 통하여 건조용 배쓰(15)측으로 이동시에만 상기 복수의 웨이퍼를 안내하도록 이동수단(130)의 의해 상기 린스용 배쓰(12)의 배출부(12b)측으로 이동가능하게 구비된다.Here, the guide member 110 of the moving means 130 to guide the plurality of wafers only when the plurality of wafer-mounted slotter 13 is moved to the drying bath 15 through the lifter 14 side. By the rinse bath 12 is provided to be movable to the discharge portion (12b) side.
이하에서, 반도체 웨이퍼용 건조기는 공지의 것으로 이에 대한 상세한 설명은 생략하고, 상기한 본 발명에 따른 반도체 웨이퍼용 건조기의 가이드장치에 대해서만 첨부된 도면 도 1 내지도 6을 참조하여 보다 상세하게 설명하면 다음과 같다.Hereinafter, a dryer for a semiconductor wafer is known and a detailed description thereof is omitted, and the guide device of the dryer for a semiconductor wafer according to the present invention described above will be described in more detail with reference to FIGS. 1 to 6. As follows.
즉, 상기한 본 발명에 따른 반도체 웨이퍼용 건조기의 가이드장치의 안내부재(110)는 린스용 배쓰(12)의 서로 마주보는 양내측면에 각각 설치가능하도록 사각 형상의 판상으로 형성되되, 각 일면에는 상기 웨이퍼가 탈이온화 물(DI)의 수면을 벗어날 때, 표면 장력 그레디언트(gradient)에 의해 서로 달라붙지 않고 서로에 대하여 이격된 거리를 유지하면서 수직 상승되도록 슬롯터(13)에 형성된 안착홈에 대응되게 종방향으로 일정 간격 다수의 안내용 홈(111)이 각각 형성되어 구비된다. That is, the guide member 110 of the guide device of the semiconductor wafer dryer according to the present invention is formed in a plate shape of a square shape so as to be respectively installed on both inner sides facing each other of the rinse bath 12, each surface When the wafer leaves the surface of deionized water (DI), it responds to the seating groove formed in the slotter 13 so as to rise vertically while maintaining a spaced apart from each other without sticking to each other by a surface tension gradient. It is provided with a plurality of guide grooves 111 are formed at regular intervals in the longitudinal direction.
상기한 이동수단(130)은 린스용 배쓰(12)의 배출부 외측면에 고정 설치되어 제어부의 제어에 의해 공압 또는 유압이 유입 및 유출가능하게 구비되는 이동용실린더(131)와, 상기 이동용실린더(131)에 일단이 삽입되고 타단은 상기 배출부(12b)와 연통되게 천공된 이동용홀(133)을 통하여 린스용 배쓰(12)의 양내측면에 위치된 안내부재(110)에 고정되어 상기 이동용실린더(131)가 구동하는 것에 대응되게 상기 안내부재(110)를 배출부(12b)측으로 이동시킬 수 있도록 구비되는 연결부재(135)로 구성된다. The moving means 130 is fixedly installed on the outer surface of the discharge portion of the rinse bath 12 and is provided with a pneumatic or hydraulic fluid that can be introduced and discharged under control of a control unit, and a movable cylinder 131 and the movable cylinder ( 131) one end is inserted and the other end is fixed to the guide member 110 located on both inner sides of the bath 12 for rinsing through a hole for movement 133 drilled to communicate with the discharge portion 12b, the moving cylinder It is composed of a connecting member (135) provided to move the guide member (110) toward the discharge portion (12b) to correspond to the driving (131).
이와 같이 구성된 본 발명에 따른 반도체 웨이퍼용 건조기의 가이드장치를 린스용 배쓰(12)의 내주면에 서로 마주보는 위치에 설치하여, 린스용 배쓰(12)에 저장되어 배출부(12b)측으로 오버플러우되고 있는 탈이온화 물(DI)를 통하여 린스된 후, 린스된 상기한 다수의 웨이퍼를 건조시키기 위해 리프터(14)가 구동하게 되면, 첨부된 도면 도 1 내지 도 5에 도시된 바와 같이 안착홈에 일정 간격으로 다수의 웨이퍼가 안착된 슬롯터(13)가 건조용 배쓰(15)측으로 이동하게 위해 상승하게 된다.The guide device of the dryer for a semiconductor wafer according to the present invention configured as described above is installed at a position facing each other on the inner circumferential surface of the rinse bath 12, is stored in the rinse bath 12 and is overflowed to the discharge section 12b side. After being rinsed through deionized water (DI), when the lifter 14 is driven to dry the plurality of rinsed wafers, the attached drawing is fixed to the seating groove as shown in FIGS. 1 to 5. The slotter 13 in which a plurality of wafers are seated at intervals is raised to move to the drying bath 15 side.
이때, 다수의 웨이퍼는 린스용 배쓰(12)의 양내측면에 설치된 안내부재(110)의 안내용 홈(111)에 각각 안내되면서 상승하게 된다.At this time, the plurality of wafers are guided to the guide grooves 111 of the guide member 110 installed on both inner sides of the rinse bath 12, respectively, and ascend.
이후, 상기 다수의 웨이퍼가 탈이온화 물(DI)의 수면을 벗어날 때까지 안내부재(110)의 안내용 홈(111)을 따라 각각 안내되면서 상승하게 하게 되므로 표면 장력 그레디언트(gradient)에 의해 서로 달라붙지 않게 된다.Subsequently, the plurality of wafers are guided and ascended along the guide grooves 111 of the guide member 110 until they exit the surface of the deionized water (DI), so that they are different from each other by a surface tension gradient. It will not stick.
그로 인해 미세한 비틀림 또는 구부림된 웨이퍼로 인해 정상적인 웨이퍼까지 손상되는 것을 방지할 수 있다.As a result, it is possible to prevent damage to a normal wafer due to a fine twisted or bent wafer.
이상의 설명은 본 발명의 기술 사상을 예시적으로 설명한 것에 불과한 것으로서, 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자라면 본 발명의 본질적인 특성에서 벗어나지 않는 범위에서 다양한 수정 및 변형이 가능할 것이다. 따라서, 본 발명에 개시된 실시예들은 본 발명의 기술 사상을 한정하기 위한 것이 아니라 설명하기 위한 것이고, 이러한 실시예에 의하여 본 발명의 기술 사상의 범위가 한정되는 것은 아니다. 본 발명의 보호 범위는 아래의 청구범위에 의하여 해석되어야 하며, 그와 동등한 범위 내에 있는 모든 기술 사상은 본 발명의 권리범위에 포함되는 것으로 해석되어야 할 것이다.The above description is merely illustrative of the technical idea of the present invention, and those skilled in the art to which the present invention pertains may make various modifications and variations without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain, and the scope of the technical spirit of the present invention is not limited by these embodiments. The scope of protection of the present invention should be interpreted by the following claims, and all technical spirits within the equivalent range should be interpreted as being included in the scope of the present invention.

Claims (3)

  1. 반도체 웨이퍼용 건조기의 가이드장치는, The guide device of the semiconductor wafer dryer is
    외관을 형성하는 하우징(11)의 내측 하부에 설치되되, 바닥에는 배관된 탈이온화 물 공급구(12a)를 통하여 탈이온화 물(DI)이 공급되면 저장시킬 수 있도록 형성되고, 상부는 공급된 탈이온화 물이 오버플러우되도록 개구되며, 외측면 상부에는 오버플러우된 탈이온화 물을 배출구(12b)측으로 안내시키기 위한 배출부(12c)가 형성되어 구비되는 린스용 배쓰(12)와, 상기 린스용 배쓰(12)에 위치되어 상부에 복수의 웨이퍼를 일정 간격으로 안착시킬 수 있도록 다수의 안착홈이 형성된 슬롯터(13)를 리프팅시킬 수 있도록 구비되는 리프터(14)와, 상기 하우징(11)의 내부에 설치됨에 따른 린스용 배쓰(12) 상부에 위치되어 상기 리프터(14)에 의해 리프팅된 복수의 웨이퍼측으로 스프레이공급부를 통하여 이소 프로필 알코올 및 고온의 질소를 스프레이시켜 건조시킬 수 있도록 구비되는 건조용 배쓰(15)를 포함하여 구성된 반도체 웨이퍼용 건조기(10)를 통하여,It is installed on the inner lower part of the housing 11 forming the exterior, and is formed to be stored when deionized water (DI) is supplied through the deionized water supply port 12a piped to the bottom, and the upper part is supplied. A rinse bath 12 and an rinse bath 12 are provided to open the ionized water so as to be overflowed, and an outlet 12c for guiding the overflowed deionized water to the outlet 12b side is formed on the upper side of the outer surface. A lifter 14 located at (12) and provided to lift a slotter 13 in which a plurality of seating grooves are formed so as to seat a plurality of wafers at regular intervals on the upper portion, and an interior of the housing 11 A drying bath provided to be dried by spraying isopropyl alcohol and high temperature nitrogen through a spray supply unit to a plurality of wafer sides lifted by the lifter 14, located on the rinse bath 12 according to the installation. Through the dryer (10) for a semiconductor wafer comprising 15,
    상기 웨이퍼들을 마란고니 건조시 표면 장력 그레디언트에 의해 서로 달라붙는 것을 방지하도록 상기 린스용 배쓰(12)의 내주면에 설치되어 복수의 웨이퍼가 안착된 슬롯터(13)가 리프터(14)의 구동에 의해 건조용 배쓰(15)측으로 이동시 상기 복수의 웨이퍼를 각각 개별적으로 안내시킬 수 있도록 각 일면에는 안내용 홈(111)이 일정 간격으로 다수 형성되어 서로에 대하여 마주보도록 구비된 안내부재(110)를 포함하는 것을 특징으로 하는 반도체 웨이퍼용 건조기의 가이드장치.The slotter 13 installed on the inner circumferential surface of the rinse bath 12 to prevent the wafers from sticking to each other by the surface tension gradient when drying the marangoni is driven by the lifter 14. When moving toward the drying bath 15 side, a plurality of guide grooves 111 are formed at regular intervals on each side so as to guide the plurality of wafers individually, and a guide member 110 provided to face each other is provided. A guide device for a semiconductor wafer dryer, characterized in that.
  2. 제1항에 있어서,According to claim 1,
    상기 안내부재(110)는 복수의 웨이퍼가 안착된 슬롯터(13)가 리프터(14)를 통하여 건조용 배쓰(15)측으로 이동시에만 상기 복수의 웨이퍼를 안내하도록 이동수단(130)의 의해 상기 린스용 배쓰(12)의 배출부(12b)측으로 이동가능하게 구비된 것을 특징으로 하는 반도체 웨이퍼용 건조기의 가이드장치.The guide member 110 is rinsed by the moving means 130 to guide the plurality of wafers only when the slotter 13 on which the plurality of wafers are seated moves through the lifter 14 toward the drying bath 15 side. Guide device for a dryer for a semiconductor wafer, characterized in that it is provided to be movable to the discharge portion (12b) side of the bath (12).
  3. 제2항에 있어서,According to claim 2,
    상기한 이동수단(130)은 린스용 배쓰(12)의 배출부 외측면에 고정 설치되어 제어부의 제어에 의해 공압 또는 유압이 유입 및 유출가능하게 구비되는 이동용실린더(131)와, 상기 이동용실린더(131)에 일단이 삽입되고 타단은 상기 배출부(12b)와 연통되게 천공된 이동용홀(133)을 통하여 린스용 배쓰(12)의 양내측면에 위치된 안내부재(110)에 고정되어 상기 이동용실린더(131)가 구동하는 것에 대응되게 상기 안내부재(110)를 배출부(12b)측으로 이동시킬 수 있도록 구비되는 연결부재(135)로 구성된 것을 특징으로 하는 반도체 웨이퍼용 건조기의 가이드장치. The moving means 130 is fixedly installed on the outer surface of the discharge portion of the rinse bath 12 and is provided with a pneumatic or hydraulic fluid that can be introduced and discharged under control of a control unit, and a movable cylinder 131 and the movable cylinder ( 131) one end is inserted and the other end is fixed to the guide member 110 located on both inner sides of the bath 12 for rinsing through a hole for movement 133 drilled to communicate with the discharge portion 12b, the moving cylinder Guide device for a semiconductor wafer dryer, characterized in that it comprises a connecting member (135) provided to move the guide member (110) toward the discharge portion (12b) to correspond to the driving (131).
PCT/KR2019/017859 2018-12-26 2019-12-17 Apparatus for guiding drier for semiconductor wafer WO2020138812A1 (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07297165A (en) * 1994-04-22 1995-11-10 Nippon Steel Corp Method of drying cleaning liquid for semiconductor substrate
KR20040022091A (en) * 2002-09-06 2004-03-11 삼성전자주식회사 Apparatus for drying a semiconductor wafer using vapor dry method
KR100715983B1 (en) * 2005-11-23 2007-05-08 세메스 주식회사 Apparatus and method for cleaning substrates
KR100872995B1 (en) * 2007-09-07 2008-12-09 주식회사 케이씨텍 Apparatus for treating substrate, and method for treating substrate using the same
KR20150009487A (en) * 2014-08-26 2015-01-26 오진성 Substrate dryer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07297165A (en) * 1994-04-22 1995-11-10 Nippon Steel Corp Method of drying cleaning liquid for semiconductor substrate
KR20040022091A (en) * 2002-09-06 2004-03-11 삼성전자주식회사 Apparatus for drying a semiconductor wafer using vapor dry method
KR100715983B1 (en) * 2005-11-23 2007-05-08 세메스 주식회사 Apparatus and method for cleaning substrates
KR100872995B1 (en) * 2007-09-07 2008-12-09 주식회사 케이씨텍 Apparatus for treating substrate, and method for treating substrate using the same
KR20150009487A (en) * 2014-08-26 2015-01-26 오진성 Substrate dryer

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