CN112786540A - 扇出型封装结构及其制作方法 - Google Patents

扇出型封装结构及其制作方法 Download PDF

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CN112786540A
CN112786540A CN201911078460.5A CN201911078460A CN112786540A CN 112786540 A CN112786540 A CN 112786540A CN 201911078460 A CN201911078460 A CN 201911078460A CN 112786540 A CN112786540 A CN 112786540A
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redistribution layer
fan
opening
chip
layer
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潘盈洁
吕香桦
倪庆羽
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Qingdao New Core Technology Co Ltd
Futaihua Industry Shenzhen Co Ltd
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Futaihua Industry Shenzhen Co Ltd
Socle Technology Corp
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Priority to CN201911078460.5A priority Critical patent/CN112786540A/zh
Priority to US16/936,721 priority patent/US11462481B2/en
Publication of CN112786540A publication Critical patent/CN112786540A/zh
Priority to US17/860,328 priority patent/US20220344277A1/en
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Abstract

本发明提出一种扇出型封装结构的制作方法,包括以下步骤:提供一载板,所述载板其中一表面上设置有一重布线层,所述重布线层中设有至少一导电线路;在所述重布线层上形成一定位片;在所述定位片上开设至少一开孔,其中,所述开孔贯穿所述定位片;在每一所述开孔中安装一芯片,并使得所述芯片与所述导电线路电连接;以及去除所述载板,从而得到所述扇出型封装结构。本发明提供的扇出型封装结构的制作方法能够防止所述芯片偏移。本发明还提供一种由所述方法制备的扇出型封装结构。

Description

扇出型封装结构及其制作方法
技术领域
本发明涉及封装技术领域,尤其涉及一种扇出型封装结构及其制作方法。
背景技术
扇出型封装是一种嵌入式封装,同时也是一种集成灵活性好的主要先进封装之一。目前,扇出型封装的制作方法一般是在载板上安装芯片,通过模塑在载板上形成一层封装层以覆盖所述芯片,并在封装层中设置导线。然而,在压模以及载板暂时键合过程中,封装层中的芯片会发生偏移,从而导致芯片与封装层中的导线连接不良,进而影响扇出型封装结构的质量。
发明内容
有鉴于此,本发明提供一种能够防止芯片偏移的扇出型封装结构的制作方法。
另,还有必要提供一种由上述制作方法制得的扇出型封装结构。
本发明提供一种扇出型封装结构的制作方法,包括以下步骤:
提供一载板,所述载板其中一表面上设置有一重布线层,所述重布线层中设有至少一导电线路;
在所述重布线层上形成一定位片;
在所述定位片上开设至少一开孔,其中,所述开孔贯穿所述定位片;
在每一所述开孔中安装一芯片,并使得所述芯片与所述导电线路电连接;以及
去除所述载板,从而得到所述扇出型封装结构。
本发明还提供一种扇出型封装结构,包括:
一重布线层,所述重布线层中设有至少一导电线路;
一定位片,所述定位片形成于所述重布线层上,所述定位片上开设至少一开孔,所述开孔贯穿所述定位片;以及
至少一芯片,每一所述芯片安装在其中一所述开孔中,且与所述导电线路电连接。
本发明通过在所述重布线层上设置所述定位片,并在所述定位片上开设所述开孔,将所述芯片安装在所述开孔中以实现所述芯片的定位,避免后续制程影响所述芯片的位置,从而防止所述芯片的偏移,同时也改善了所述芯片与所述导电线路之间的对位精度,进而提高了所述扇出型封装结构的质量。
附图说明
图1是本发明第一实施例提供的载板和重布线层的结构示意图。
图2是在图1所示的重布线层上形成定位片的结构示意图。
图3是在图2所示的定位片上开设开孔后的结构示意图。
图4是将图3所示的开孔中安装芯片后的结构示意图。
图5是将图4所示的芯片的表面以及重布线层的侧面形成保护层后的结构示意图。
图6是将图5所示的载板去除后的结构示意图。
图7是切割图6所示的保护层、定位片、重布线层以及可剥膜后得到的扇出型封装结构的结构示意图。
图8是本发明第二实施例提供的扇出型封装结构的结构示意图。
主要元件符号说明
扇出型封装结构 100、200
载板 10
重布线层 20
导电线路 21
第一连接垫 211
第二连接垫 212
可剥膜 30
定位片 40
开孔 41
间隙 411
芯片 50
保护层 60
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
除非另有定义,本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本文中在本发明的说明书中所使用的术语只是为了描述具体的实施例的目的,不是旨在于限制本发明。
为能进一步阐述本发明达成预定目的所采取的技术手段及功效,以下结合附图及较佳实施方式,对本发明作出如下详细说明。
本发明第一实施例提供一种扇出型封装结构的制作方法,包括如下步骤:
步骤S1,请参阅图1,提供一载板10。
所述载板10其中一表面上设置有一重布线层20,所述重布线层20通过一可剥膜30与所述载板10粘结。所述重布线层20中设有至少一导电线路21,每一所述导电线路21包括至少一位于所述重布线层20远离所述可剥膜30的表面的第一连接垫211、以及至少一位于所述重布线层20临近所述可剥膜30的表面的第二连接垫212。其中,所述第一连接垫211暴露于所述重布线层20远离所述可剥膜30的表面,所述第二连接垫212暴露于所述重布线层20临近所述可剥膜30的表面。
所述第一连接垫211与所述第二连接垫212之间电性连接。所述导电线路21的材质为铜、银、金以及钨等导电系数高的金属材料。在本实施方式中,所述导电线路21的材质为金属铜。
所述载板10的材质可为有机物,也可以为无机物,具体的可选为玻璃、聚甲基丙烯酸甲酯、聚酰亚胺、硅胶以及环氧树脂等。在本实施方式中,所述载板10的材质为聚酰亚胺。
其中,如图1所示,所示重布线层20中所述导电线路21的数量为至少两个。每相邻两个所述导电线路21之间间隔设置。
步骤S2,请参阅图2,在所述重布线层20上形成一定位片40。
在本实施方式中,所述定位片40的材质为聚酰亚胺。
步骤S3,请参阅图3,在所述定位片40上开设至少一开孔41。
其中,所述开孔41贯穿所述定位片40,且与所述第一连接垫211对应,以致将所述第一连接垫211暴露于外界。在本实施方式中,所述开孔41的直径自所述定位片40临近所述重布线层20的表面向所述定位片40远离所述重布线层20的表面增加。在本实施方式中,所述开孔41临近所述重布线层20的直径与所述第一连接垫211的宽度相等。所述开孔41纵截面的形状大致为倒立的梯形。
在本实施方式中,所述开孔41通过曝光以及显影等工艺制备。在其他实施方式中,所述开孔41还可通过激光冲孔以及机械冲孔等工艺制备。
步骤S4,请参阅图4,在每一所述开孔41中安装一芯片50。
其中,所述芯片50与所述第一连接垫211电连接,且所述芯片50的正面朝向所述第一连接垫211。在本实施方式中,所述芯片50远离所述重布线层20的表面与所述定位片40远离所述重布线层20的表面齐平。由于所述开孔41如上述描述的形状,所述芯片50远离所述重布线层20的部分与所述开孔41的内壁形成一间隙411。即,所述芯片50并未完全填满所述开孔41。
步骤S5,请参阅图5,至少在所述芯片50的表面以及所述重布线层20的侧面形成一保护层60。
其中,所述保护层60还覆盖所述定位片40远离所述重布线层20的表面以及所述定位片40的侧面。在本实施方式中,所述保护层60还填充在所述间隙411中。所述载板10的宽度可大于所述重布线层20的宽度,使得所述载板10的部分表面未被所述重布线层20覆盖。形成于所述重布线层20的侧面的所述保护层60位于所述载板10未被所述重布线层20覆盖的表面。
所述保护层60用于保护所述芯片50、所述定位片40以及所述重布线层20。在本实施方式中,所述保护层60通过注射成型。所述保护层60的材质可为树脂,如聚乙烯以及聚丙烯等。
步骤S6,请参阅图6,去除所述载板10。
步骤S7,请参阅图7,当所述重布线层20包括至少两个所述导电线路21时,沿相邻两个所述导电线路21之间的间隙切割所述保护层60、所述定位片40、所述重布线层20以及所述可剥膜30,从而得到所述扇出型封装结构100。
当切割所述保护层60、所述定位片40、所述重布线层20以及所述可剥膜30后,可得到至少两个所述扇出型封装结构100。其中,切割时并不破坏所述导电线路21。
在另一实施方式中,当所述重布线层20中只设有一个所述导电线路21时,则不需要进行切割。
所述扇出型封装结构100通过所述第二连接垫212与一外部器件(图未示)电连接,以实现所述扇出型封装结构100与所述外部器件之间的信号传输。其中,所述可剥膜30用于保护所述第二连接垫212。具体地,当所述扇出型封装结构100需要与所述外部器件进行信号传输时,需要先把所述可剥膜30去除,暴露出所述第二连接垫212,并通过所述第二连接垫212与所述外部器件电连接,从而实现所述扇出型封装结构100与所述外部器件之间的信号传输。
请参阅图8,本发明第二实施例提供一种扇出型封装结构的制作方法,第二实施例与第一实施例的区别在于:在步骤S4中,在安装所述芯片50之后,还包括移除所述定位片40,从而使得所述保护层60还覆盖所述重布线层20临近所述芯片50的表面以及所述芯片50的侧面。
请参阅图7,本发明第三实施例提供一种扇出型封装结构100,所述扇出型封装结构100包括一重布线层20、一形成于所述重布线层20上的定位片40、至少一芯片50以及一保护层60。
所述重布线层20中设有至少一导电线路21,每一所述导电线路21包括至少一位于所述重布线层20临近所述定位片40的表面的第一连接垫211、以及至少一位于所述重布线层20远离所述定位片40的表面的第二连接垫212。其中,所述第一连接垫211暴露于所述重布线层20临近所述定位片40的表面,所述第二连接垫212暴露于所述重布线层20远离所述定位片40的表面。
所述第一连接垫211与所述第二连接垫212之间电性连接。所述第二连接垫212与一外部器件(图未示)连接,以实现所述扇出型封装结构100与所述外部器件之间的信号传输。所述导电线路21的材质为铜、银、金以及钨等导电系数高的金属材料。在本实施方式中,所述导电线路21的材质为金属铜。
所述重布线层20远离所述芯片50的表面粘结有一可剥膜30,所述可剥膜30用于保护所述第二连接垫212。具体地,当所述扇出型封装结构100需要与所述外部器件进行信号传输时,需要先把所述可剥膜30去除,暴露出所述第二连接垫212,并通过所述第二连接垫212与所述外部器件电连接,从而实现所述扇出型封装结构100与所述外部器件之间的信号传输。
所述定位片40上开设至少一开孔41,所述开孔41贯穿所述定位片40,且与所述第一连接垫211对应。在本实施方式中,所述开孔41的直径自所述定位片40临近所述重布线层20的表面向所述定位片40远离所述重布线层20的表面增加。在本实施方式中,所述开孔41临近所述重布线层20的直径与所述第一连接垫211的宽度相等。所述开孔41纵截面的形状大致为倒立的梯形。在本实施方式中,所述定位片40的材质为聚酰亚胺。
每一所述芯片50安装在其中一所述开孔41中,且与所述第一连接垫211电连接。所述芯片50的正面朝向所述第一连接垫211。在本实施方式中,所述芯片50远离所述重布线层20的表面与所述定位片40远离所述重布线层20的表面齐平。由于所述开孔41如上述描述的形状,所述芯片50远离所述重布线层20的部分与所述开孔41的内壁形成一间隙411。即,所述芯片50并未完全填满所述开孔41。
所述保护层60至少覆盖所述芯片50远离所述重布线层20的表面以及所述重布线层20的侧面。在本实施方式中,所述保护层60还覆盖所述定位片40远离所述重布线层20的表面以及所述定位片40的侧面。在本实施方式中,所述保护层60还填充在所述间隙411中。所述可剥膜30的宽度可大于所述重布线层20的宽度,使得覆盖于所述重布线层20的侧面的所述保护层60位于超出所述重布线层20的所述可剥膜30的表面。所述保护层60用于保护所述芯片50、所述定位片40以及所述重布线层20。所述保护层60的材质可为树脂,如聚乙烯以及聚丙烯等。
请参阅图8,本发明第四实施例提供一种扇出型封装结构200,第四实施例与第三实施例的区别在于:所述扇出型封装结构200不包括所述定位片40,其中,所述保护层60还覆盖所述重布线层20临近所述芯片50的表面以及所述芯片50的侧面。
本发明通过在所述重布线层20上设置所述定位片40,并在所述定位片40上开设所述开孔41,将所述芯片50安装在所述开孔41中以实现所述芯片50的定位,避免后续制程影响所述芯片50的位置,从而防止所述芯片50的偏移,同时也改善了所述芯片50与所述第一连接垫211之间的对位精度,进而提高了所述扇出型封装结构的质量。本发明还将所述开孔41设置为倒立梯形结构,有利于所述芯片50的安装,从而提高了所述扇出型封装结构的生产效率,同时不同的所述开孔41可用于不同的所述芯片50的安装,从而进一步提高了所述扇出型封装结构的生产效率。
以上说明仅仅是对本发明一种优化的具体实施方式,但在实际的应用过程中不能仅仅局限于这种实施方式。对本领域的普通技术人员来说,根据本发明的技术构思做出的其他变形和改变,都应该属于本发明权利要求的保护范围。

Claims (10)

1.一种扇出型封装结构的制作方法,其特征在于,包括以下步骤:
提供一载板,所述载板其中一表面上设置有一重布线层,所述重布线层中设有至少一导电线路;
在所述重布线层上形成一定位片;
在所述定位片上开设至少一开孔,其中,所述开孔贯穿所述定位片;
在每一所述开孔中安装一芯片,并使得所述芯片与所述导电线路电连接;以及
去除所述载板,从而得到所述扇出型封装结构。
2.如权利要求1所述的扇出型封装结构的制作方法,其特征在于,在安装所述芯片之后,还包括步骤:
移除所述定位片。
3.如权利要求1或2所述的扇出型封装结构的制作方法,其特征在于,在安装所述芯片之后,还包括步骤:
在所述芯片的表面以及所述重布线层的侧面形成一保护层。
4.如权利要求3所述的扇出型封装结构的制作方法,其特征在于,每一所述导电线路包括至少一位于所述重布线层远离所述载板的表面的第一连接垫,所述第一连接垫暴露于所述重布线层远离所述载板的表面,所述开孔与所述第一连接垫对应,所述芯片与所述第一连接垫电连接。
5.如权利要求4所述的扇出型封装结构的制作方法,其特征在于,所述开孔的直径自所述定位片临近所述重布线层的表面向所述定位片远离所述重布线层的表面增加,所述开孔临近所述重布线层的直径与所述第一连接垫的宽度相等,所述芯片远离所述重布线层的部分与所述开孔的内壁形成一间隙,所述保护层还填充在所述间隙中。
6.如权利要求1所述的扇出型封装结构的制作方法,其特征在于,所述重布线层通过一可剥膜与所述载板粘结。
7.一种扇出型封装结构,其特征在于,包括:
一重布线层,所述重布线层中设有至少一导电线路;
一定位片,所述定位片形成于所述重布线层上,所述定位片上开设至少一开孔,所述开孔贯穿所述定位片;以及
至少一芯片,每一所述芯片安装在其中一所述开孔中,且与所述导电线路电连接。
8.如权利要求7所述的扇出型封装结构,其特征在于,所述扇出型封装结构还包括一保护层,所述保护层覆盖所述芯片远离所述重布线层的表面以及所述重布线层的侧面。
9.如权利要求8所述的扇出型封装结构,其特征在于,每一所述导电线路包括至少一位于所述重布线层临近所述定位片的表面的第一连接垫,所述第一连接垫暴露于所述重布线层临近所述定位片的表面,所述开孔与所述第一连接垫对应,所述芯片与所述第一连接垫电连接。
10.如权利要求9所述的扇出型封装结构,其特征在于,所述开孔的直径自所述定位片临近所述重布线层的表面向所述定位片远离所述重布线层的表面增加,所述开孔临近所述重布线层的直径与所述第一连接垫的宽度相等,所述芯片远离所述重布线层的部分与所述开孔的内壁形成一间隙,所述保护层还填充在所述间隙中。
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CN104037134A (zh) * 2013-03-05 2014-09-10 马克西姆综合产品公司 电子元件的扇出和异构性封装
CN105990270A (zh) * 2015-02-13 2016-10-05 矽品精密工业股份有限公司 电子封装件及其制法
CN105428260A (zh) * 2015-12-22 2016-03-23 成都锐华光电技术有限责任公司 一种基于载体的扇出2.5d/3d封装结构的制造方法
CN106098630A (zh) * 2016-08-09 2016-11-09 中芯长电半导体(江阴)有限公司 一种扇出型晶圆级封装方法及封装件
CN106206333A (zh) * 2016-08-10 2016-12-07 中芯长电半导体(江阴)有限公司 一种扇出型晶圆级封装方法

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