CN112736204B - 金属诱导非晶结晶化转变超高阻隔膜及其制备方法 - Google Patents
金属诱导非晶结晶化转变超高阻隔膜及其制备方法 Download PDFInfo
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- CN112736204B CN112736204B CN202011616924.6A CN202011616924A CN112736204B CN 112736204 B CN112736204 B CN 112736204B CN 202011616924 A CN202011616924 A CN 202011616924A CN 112736204 B CN112736204 B CN 112736204B
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- 230000004888 barrier function Effects 0.000 title claims abstract description 48
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 44
- 239000002184 metal Substances 0.000 title claims abstract description 44
- 238000002425 crystallisation Methods 0.000 title claims abstract description 30
- 230000008025 crystallization Effects 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 230000009466 transformation Effects 0.000 title abstract description 4
- 239000001301 oxygen Substances 0.000 claims abstract description 23
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 23
- 238000002834 transmittance Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 4
- 238000004544 sputter deposition Methods 0.000 claims abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 41
- 238000000151 deposition Methods 0.000 claims description 28
- 239000013077 target material Substances 0.000 claims description 21
- 230000005540 biological transmission Effects 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 230000007704 transition Effects 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 239000004205 dimethyl polysiloxane Substances 0.000 claims 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 57
- 239000010409 thin film Substances 0.000 abstract description 9
- 238000004806 packaging method and process Methods 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 80
- 239000000919 ceramic Substances 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 229910052593 corundum Inorganic materials 0.000 description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 230000035699 permeability Effects 0.000 description 3
- -1 OLEDs Chemical compound 0.000 description 2
- 238000004100 electronic packaging Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000009512 pharmaceutical packaging Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Laminated Bodies (AREA)
Abstract
Description
发明实施 | 实施例1 | 实施例2 | 实施例3 | 实施例4 | 实施例5 |
WVTR(g/(m<sup>2</sup>·day)) | ≤10<sup>-5</sup> | ≤10<sup>-6</sup> | ≤10<sup>-6</sup> | ≤10<sup>-7</sup> | ≤10<sup>-7</sup> |
透光率(%) | 89 | 92 | 92 | 91 | 91 |
Claims (2)
Priority Applications (1)
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CN202011616924.6A CN112736204B (zh) | 2020-12-30 | 2020-12-30 | 金属诱导非晶结晶化转变超高阻隔膜及其制备方法 |
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CN202011616924.6A CN112736204B (zh) | 2020-12-30 | 2020-12-30 | 金属诱导非晶结晶化转变超高阻隔膜及其制备方法 |
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CN112736204A CN112736204A (zh) | 2021-04-30 |
CN112736204B true CN112736204B (zh) | 2021-08-06 |
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CN115572921B (zh) * | 2022-10-28 | 2023-06-27 | 汕头大学 | 一种提高非晶合金耐磨性的织构化超声冲击方法及应用 |
Family Cites Families (9)
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US20040229051A1 (en) * | 2003-05-15 | 2004-11-18 | General Electric Company | Multilayer coating package on flexible substrates for electro-optical devices |
FR2973939A1 (fr) * | 2011-04-08 | 2012-10-12 | Saint Gobain | Element en couches pour l’encapsulation d’un element sensible |
TWI530399B (zh) * | 2011-12-27 | 2016-04-21 | Nitto Denko Corp | Transparent gas barrier film, transparent gas barrier film manufacturing method, organic EL element, solar cell and thin film battery (1) |
CN104362129B (zh) * | 2014-11-12 | 2017-04-26 | 广州新视界光电科技有限公司 | 用于柔性薄膜电子器件的水氧阻隔膜及其封装工艺 |
CN107240648A (zh) * | 2017-05-22 | 2017-10-10 | 茆胜 | 复合封装薄膜及其制备方法 |
CN109427692B (zh) * | 2017-08-23 | 2020-11-20 | Tcl科技集团股份有限公司 | 封装薄膜及其应用 |
CN109065581B (zh) * | 2018-08-01 | 2021-01-15 | 武汉华星光电半导体显示技术有限公司 | 一种柔性基板及其制备方法、阵列基板 |
CN110473981A (zh) * | 2019-07-30 | 2019-11-19 | 武汉华星光电半导体显示技术有限公司 | 一种显示面板及其制备方法 |
CN110828700A (zh) * | 2019-12-06 | 2020-02-21 | 中国乐凯集团有限公司 | 一种用于柔性oled器件的柔性封装胶膜 |
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