CN112735991A - Wet etching base and wet processing chemical table - Google Patents
Wet etching base and wet processing chemical table Download PDFInfo
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- CN112735991A CN112735991A CN202110119234.8A CN202110119234A CN112735991A CN 112735991 A CN112735991 A CN 112735991A CN 202110119234 A CN202110119234 A CN 202110119234A CN 112735991 A CN112735991 A CN 112735991A
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- 238000001039 wet etching Methods 0.000 title claims abstract description 42
- 239000000126 substance Substances 0.000 title claims abstract description 20
- 238000005530 etching Methods 0.000 claims abstract description 69
- 238000004140 cleaning Methods 0.000 claims abstract description 56
- 238000000034 method Methods 0.000 claims abstract description 27
- 230000008569 process Effects 0.000 claims abstract description 25
- 230000003068 static effect Effects 0.000 claims abstract description 24
- 239000007788 liquid Substances 0.000 claims abstract description 20
- 238000001802 infusion Methods 0.000 claims description 11
- 239000004743 Polypropylene Substances 0.000 claims description 6
- 229920001155 polypropylene Polymers 0.000 claims description 6
- -1 polypropylene Polymers 0.000 claims description 5
- 238000004880 explosion Methods 0.000 abstract description 5
- 238000004544 sputter deposition Methods 0.000 abstract description 5
- 230000002950 deficient Effects 0.000 abstract description 3
- 238000009825 accumulation Methods 0.000 description 11
- 230000005611 electricity Effects 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- BZPCMSSQHRAJCC-UHFFFAOYSA-N 1,2,3,3,4,4,5,5,5-nonafluoro-1-(1,2,3,3,4,4,5,5,5-nonafluoropent-1-enoxy)pent-1-ene Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)=C(F)OC(F)=C(F)C(F)(F)C(F)(F)C(F)(F)F BZPCMSSQHRAJCC-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229940095676 wafer product Drugs 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05F—STATIC ELECTRICITY; NATURALLY-OCCURRING ELECTRICITY
- H05F3/00—Carrying-off electrostatic charges
- H05F3/02—Carrying-off electrostatic charges by means of earthing connections
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a wet etching base station and a wet processing chemical station, wherein the wet etching base station comprises a reaction chamber, a pipeline assembly and an electrostatic diversion piece, the pipeline assembly comprises an etching pipe and a cleaning pipe, and the etching pipe is used for introducing etching liquid into the reaction chamber; the cleaning pipe is used for introducing cleaning liquid into the reaction chamber; the static diversion piece is attached to at least one of the etching pipe and the cleaning pipe. The static flow guide element is arranged on the etching pipe and/or the cleaning pipe, so that electric charges accumulated in a wet process can be dredged, the situation that the surface of a wafer is defective due to explosion sputtering after the electric charges are accumulated to one magnitude is avoided, and the yield of the wafer is improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a wet etching base station and a wet processing chemical station.
Background
With the advancement of semiconductor manufacturing processes, the problems faced by wet etching are increasing. Before the film is deposited, the wafer is stored on a wafer bearing frame of a dust-free chamber, the dust-free chamber is classified into different grades, even the dust-free chamber with the lowest grade can not avoid the invasion of organic gas and tiny particles in the environment, in addition, the pollution caused by ions, molecules, particles and the like in the previous process can influence the normal growth of the film, specifically, the tiny particles can grow into large particles along with the film, so that the film is protruded, and the ions are diffused in the film under the action of high temperature, so that the resistivity of the film is influenced. In addition, if particles remain on the surface of the deposited film, the subsequent etching process can block the etching, if exposure is performed, the pattern of the film can be affected, and if chemical mechanical polishing is performed, the film can be scratched.
Generally, the film layer is cleaned by an RCA cleaning process before and after deposition, and a currently preferred scheme is to clean the film layer by hydrogen peroxide Sulfate (SPM) and diluted hydrofluoric acid (DHF) before the RCA cleaning. In the whole process, the wafer after being cleaned still generates defects due to explosion sputtering after induced charge accumulation generated by static electricity inside the machine reaches an order of magnitude. Therefore, how to avoid the charge accumulation inside the apparatus in the process is an urgent problem to be solved.
Disclosure of Invention
The invention aims to provide a wet etching base station and a wet processing chemical station, which are used for solving the problem of wafer defects caused by charge accumulation in a wet processing.
In order to solve the above technical problems, according to one aspect of the present invention, a wet etching station is provided, which includes a reaction chamber, a pipeline assembly and an electrostatic guider,
the pipeline assembly comprises an etching pipe and a cleaning pipe, and the etching pipe is used for introducing etching liquid into the reaction chamber; the cleaning pipe is used for introducing cleaning liquid into the reaction chamber;
the static diversion piece is attached to at least one of the etching pipe and the cleaning pipe.
Optionally, the electrostatic diversion member is tubular and is sleeved on the periphery of the etching pipe and/or the cleaning pipe.
Optionally, the electrostatic current guiding component has two slot groups, each slot group includes a plurality of slots arranged at intervals along an extending direction of the electrostatic current guiding component, and the slots penetrate through the electrostatic current guiding component along a radial direction; the two slot hole groups are distributed on two sides of the extension line of the static flow guide component along the radial direction and are arranged along the extension direction of the static flow guide component in a staggered mode.
Optionally, the electrostatic current guiding element has an edge slit formed along an extending direction of the electrostatic current guiding element, and the electrostatic current guiding element is configured to be sleeved on the etching tube and/or the cleaning tube through the edge slit.
Optionally, the electrostatic current guide is a polypropylene member.
Optionally, the electrostatic current guide is grounded.
Optionally, the etching pipe with the scavenge pipe is responsible for and other branch's tub including the infusion respectively, other branch's tub of certainly the infusion is responsible for radially outwards extends, other branch's tub of with reaction chamber connects, etching solution/washing liquid certainly the infusion is responsible for, the warp other branch's tub of lets in reaction chamber.
Optionally, the wet etching base station has a plurality of the electrostatic current guiding members, and the electrostatic current guiding members are disposed on a portion of the etching pipe/cleaning pipe between two adjacent reaction chambers.
In accordance with another aspect of the present invention, there is also provided a wet processing chemical station comprising a wet etch station as described above.
In summary, in the wet etching base station and the wet processing chemical station provided by the present invention, the wet etching base station includes a reaction chamber, a pipeline assembly and an electrostatic diversion member, the pipeline assembly includes an etching pipe and a cleaning pipe, and the etching pipe is used for introducing an etching solution into the reaction chamber; the cleaning pipe is used for introducing cleaning liquid into the reaction chamber; the static diversion piece is attached to at least one of the etching pipe and the cleaning pipe. The static flow guide element is arranged on the etching pipe and/or the cleaning pipe, so that electric charges accumulated in a wet process can be dredged, the situation that the surface of a wafer is defective due to explosion sputtering after the electric charges are accumulated to one magnitude is avoided, and the yield of the wafer is improved. The invention can solve the practical problem only by arranging the static flow guide piece on the pipeline assembly, and embodies the principle that the spirit of solving the big problem by a small scheme is the first appeal.
Drawings
It will be appreciated by those skilled in the art that the drawings are provided for a better understanding of the invention and do not constitute any limitation to the scope of the invention. Wherein:
FIG. 1 is a schematic view of a wet etched submount according to an embodiment of the invention;
FIG. 2 is a front view of an electrostatic baffle according to an embodiment of the present invention;
fig. 3 is a top view of an electrostatic baffle according to an embodiment of the invention.
In the drawings:
10-a reaction chamber; 20-a tubing assembly; 21-etching a tube; 211-etching the main pipe; 212-etching the branch pipe; 22-a cleaning tube; 30-an electrostatic deflector; 31-a group of slots; 310-a slot; 32-edge seam.
Detailed Description
To further clarify the objects, advantages and features of the present invention, a more particular description of the invention will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings. It is to be noted that the drawings are in greatly simplified form and are not to scale, but are merely intended to facilitate and clarify the explanation of the embodiments of the present invention. Further, the structures illustrated in the drawings are often part of actual structures. In particular, the drawings may have different emphasis points and may sometimes be scaled differently.
As used in this application, the singular forms "a", "an" and "the" include plural referents, the term "or" is generally employed in a sense including "and/or," the terms "a" and "an" are generally employed in a sense including "at least one," the terms "at least two" are generally employed in a sense including "two or more," and the terms "first", "second" and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit to the number of technical features indicated. Thus, features defined as "first," "second," and "third" may explicitly or implicitly include one or at least two of the features unless the content clearly dictates otherwise.
The inventor finds that: the previous process of wet etching is to remove the photoresist, and the process of removing the photoresist is also an important node in the whole wet etching, and with the continuous increase of the wafer yield and the more advanced process, the inside (i.e. the reaction chamber) of the machine table can generate the condition of charge accumulation, and when the charge accumulation reaches a certain magnitude, the charge accumulation can explode and sputter, so that the surface of the wafer can generate defects. The existing method for changing the charge environment inside the reaction chamber is based on the principle of charge cancellation, and usually uses an ionizer or X-Ray (X-Ray) and can achieve better effect.
With the more advanced FAB (factory) production and more diversified processes, the new problems encountered by the machine during running are more and more. 28nm relates to an etching process for fine processing a wafer and a film forming process, etc., and further finds that a wet process chemical platform generates a charge accumulation phenomenon in production because of charge accumulation caused by a target material and the wafer, and because the conductivity of liquid in wet etching is far greater than that of gas, the experience obtained by processing the problem in the dry etching process can only be used as a reference and cannot be used as a processing means. Specifically, if an ionizer is adopted, for a wet process chemical station, since the reaction chamber is large, the effective coverage of the ionizer is small (the X axis is usually 2m, and the Y axis is usually 1.5m), and with the increase of the distance, the discharge capacity of the ionizer is gradually weakened, the energy is rapidly decreased, and the effect of improving the charge environment of the reaction chamber is not ideal; if X-rays are adopted, the effect of improving the charge environment in the reaction chamber is obviously better than that of an ion generator, but in the current process, the reaction chamber needs to be opened to check the interior of the reaction chamber after each cargo running, and after the cargo running is finished, the radiation of the X-rays in the reaction chamber exists continuously, so that health damage is caused to operators, and obviously, the first requirement of safety is not met.
Further, the inventors found that the charge environment inside the reaction chamber can be improved based on the principle of dredging the charge. Generally, RCA cleaning is commonly used for cleaning before and after depositing a film in the process, and further, the ordered combinations commonly used for cleaning are as follows: 1. RCA cleaning is independently used; 2. sulfuric acid hydrogen peroxide mixture (SPM) → diluted hydrofluoric acid (DHF) → RCA cleaning; 3. hydrogen peroxide sulfate mixture (SPM) → RCA cleaning. The most common method currently is 2. sulfuric acid hydrogen peroxide mixture (SPM) → dilute hydrofluoric acid (DHF) → RCA cleaning.
Since the wet etching is performed by using various chemical solutions, it is difficult to ensure that the wet etching does not react with H2SO4 and HF used by the machine if a grounding wire for removing static electricity is installed inside the reaction chamber to guide charges.
In view of the above, the present invention provides a wet etching stage and a wet processing chemical stage to solve the problem of wafer defects caused by charge accumulation in wet processing.
The following description refers to the accompanying drawings.
The embodiment provides a wet etching base station, as shown in fig. 1, fig. 1 is a schematic view of the wet etching base station according to an embodiment of the present invention, where the wet etching base station includes a reaction chamber 10, a pipeline assembly 20 and an electrostatic diversion member 30, the pipeline assembly 20 includes an etching pipe 21 (a solid line in fig. 1) and a cleaning pipe 22 (a dotted line in fig. 1), and the etching pipe 21 is configured to introduce an etching solution into the reaction chamber 10, so as to perform a wet etching process; the cleaning pipe 22 is used for introducing a cleaning liquid into the reaction chamber 10 so as to perform a cleaning process; the electrostatic deflector 30 is attached to at least one of the etching pipe 21 and the cleaning pipe 22. Further, the electrostatic deflector 30 is grounded. The electrostatic current guiding element 30 is used for guiding static electricity, so that static electricity on the pipeline assembly 20 can be guided, and partial static electricity in the reaction chamber 10 can be guided through the pipeline assembly 20 and the electrostatic current guiding element 30, thereby preventing charge accumulation from reaching a certain magnitude and then explosion sputtering.
Optionally, as shown in fig. 2, fig. 2 is a front view of an electrostatic guiding element according to an embodiment of the invention, and the electrostatic guiding element 30 is tubular and is sleeved on the outer periphery of the etching tube 21 and/or the cleaning tube 22.
Further, the electrostatic deflector 30 has two slot 310 groups 31, each slot 310 group 31 includes a plurality of slots 310 arranged at intervals along the extending direction of the electrostatic deflector 30, and the slots 310 penetrate the electrostatic deflector 30 along the radial direction of the electrostatic deflector 30 (i.e. penetrate the outer wall of the electrostatic deflector 30); the two slot 310 groups 31 are distributed on two sides of the extension line of the electrostatic current guiding element 30 along the radial direction of the electrostatic current guiding element 30, and are arranged along the extension direction of the electrostatic current guiding element 30 in a staggered manner. In this way, the static electricity is limited to be conducted on the electrostatic deflector 30 in a curved shape (a specific wave shape). Here, the extension line of the electrostatic deflector 30 refers to a line along the extending direction of the electrostatic deflector 30, for example, the electrostatic deflector 30 is entirely linear, and the extension line can be understood as the axis of the electrostatic deflector 30; the electrostatic baffle 30 is generally U-shaped, the extension being understood as a U-shaped curve. In addition, the two slot 310 groups 31 are arranged along the extending direction of the electrostatic current guiding element 30 in a staggered manner, specifically, please refer to fig. 2, the slot 310 on both sides of the extension line of the electrostatic current guiding element 30 is arranged in a staggered manner.
Further, as shown in fig. 3, fig. 3 is a top view of an electrostatic deflector 30 according to an embodiment of the present invention, the electrostatic deflector 30 has an edge slit 32 (dashed line in fig. 3) opened along its extending direction, and the electrostatic deflector 30 is configured to be disposed on the etching tube 21 and/or the cleaning tube 22 through the edge slit 32. Specifically, the electrostatic deflector 30 is unfolded by the edge seam 32, and then the etching tube 21/the cleaning tube 22 is wrapped, and the installation of the electrostatic deflector 30 can be realized by connecting the edge seam 32 by some component, and similarly, the clothes can be sewn by referring to a zipper. With such a configuration, the electrostatic current guiding member 30 can be directly installed on the pipeline assembly without disassembling the original pipeline assembly.
In other embodiments, the electrostatic baffle 30 is not limited to be disposed on the etching/ cleaning tube 21, 22 through the edge slit 32, and the electrostatic baffle 30 may be formed on the pipe by coating or winding.
Preferably, the electrostatic deflector 30 is a polypropylene (PP) element. The polypropylene can be used as a material for conducting static electricity, the heat-resisting temperature is 85 ℃, and the maximum temperature of the liquid (etching liquid or cleaning liquid) in the process is about 80 ℃. Since the liquid medicine in the machine during running is SPM (sulfuric acid at 80 ℃), DHF (100:1 ═ DIW: HF), NH4OH, HCL, Hot DIW (high temperature deionized water), in order to ensure both the static electricity conduction effect and the safety and reliability, the materials capable of conducting static electricity are limited, and the PP material can meet the requirements. The inventor finds that in some embodiments, a PFA tube itself can be used as the electrostatic conducting element 30, where PFA is a co-product of a small amount of perfluoropropyl vinyl ether and polytetrafluoroethylene, but when the PFA tube is used as the electrostatic conducting element 30, the pipeline assembly 20 needs to be disassembled and then installed, which is time and labor consuming, and the electrostatic conducting element 30 used in this embodiment can be directly sleeved outside the pipeline assembly 20 without disassembling the pipeline assembly 20.
Optionally, the etching pipe 21 and the cleaning pipe 22 respectively include an infusion main pipe and a branch pipe, the branch pipe extends radially outwards from the infusion main pipe, the branch pipe is connected to the reaction chamber 10, the etching solution/cleaning solution is from the infusion main pipe, and the branch pipe is introduced into the reaction chamber 10. Taking the etching pipe 21 micro as an example, the main infusion pipe of the etching pipe 21 is marked as the main etching pipe 211, the branch pipes beside the etching pipe 21 are marked as the sub etching pipes 212, the etching liquid flows into the reaction chamber 10 from the main etching pipe 211 through the sub etching pipes 212, two ends of the main etching pipe 211 are respectively connected to the devices for supplying the etching liquid, when the introduced etching liquid is larger than the required amount of the reaction chamber 10, the excessive etching liquid flows to the original devices through the main etching pipe 211, and the waste of the etching liquid is avoided. The main infusion pipe and the branch bypass pipe of the cleaning pipe 22 are arranged with the same effect as the etching pipe 21.
Further, the wet etching base station has at least three reaction chambers 10. Generally, each wet etching machine has 12 reaction chambers 10 to improve the wafer yield.
Furthermore, the wet etching base station has a plurality of the electrostatic deflectors 30, and the electrostatic deflectors 30 are arranged on the etching pipe 21/cleaning pipe 22 between two adjacent reaction chambers 10. Therefore, two adjacent reaction chambers 10 correspond to one electrostatic flow guide member 30, so that the electrostatic flow guide member 30 can dredge part of static electricity corresponding to the two reaction chambers 10, each reaction chamber 10 does not need to correspond to one electrostatic flow guide member 30, and the cost is saved. Specifically, referring to fig. 1, for the etching pipe 21, an electrostatic duct flow guide member is disposed on the etching main pipe 211 between two adjacent chambers, and the electrostatic flow guide member 30 on the cleaning pipe 22 and the electrostatic flow guide member 30 on the etching pipe 21 are disposed in the same manner.
In accordance with another aspect of the present invention, there is also provided a wet processing chemical station comprising a wet etch station as described above. It should be understood that, since the wet process chemical station includes the wet etching base station, the wet process chemical station also has the beneficial effects brought by the wet etching base station, and the working principle and other internal components of the wet etching chemical station are not described in detail herein, and those skilled in the art can configure the wet etching chemical station according to the actual situation.
The inventor finds that, when the wet etching base station and the wet processing chemical station provided by the embodiment are used for wafer processing, the probability of the charge accumulation event (represented by the yield of the wafer) is changed from 1.35% to 0 through three-month observation of the wafer product and sampling inspection of the wafer, so that the capacity of the machine is improved.
In summary, in the wet etching base station and the wet processing chemical station provided by the present invention, the wet etching base station includes a reaction chamber, a pipeline assembly and an electrostatic diversion member, the pipeline assembly includes an etching pipe and a cleaning pipe, and the etching pipe is used for introducing an etching solution into the reaction chamber; the cleaning pipe is used for introducing cleaning liquid into the reaction chamber; the static diversion piece is attached to at least one of the etching pipe and the cleaning pipe. The static flow guide element is arranged on the etching pipe and/or the cleaning pipe, so that electric charges accumulated in a wet process can be dredged, the situation that the surface of a wafer is defective due to explosion sputtering after the electric charges are accumulated to one magnitude is avoided, and the yield of the wafer is improved. The invention can solve the practical problem only by arranging the static flow guide piece on the pipeline assembly, and embodies the principle that the spirit of solving the big problem by a small scheme is the first appeal.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (10)
1. A wet etching base station is characterized by comprising a reaction chamber, a pipeline assembly and an electrostatic flow guide piece,
the pipeline assembly comprises an etching pipe and a cleaning pipe, and the etching pipe is used for introducing etching liquid into the reaction chamber; the cleaning pipe is used for introducing cleaning liquid into the reaction chamber;
the static diversion piece is attached to at least one of the etching pipe and the cleaning pipe.
2. The wet etching base station as claimed in claim 1, wherein the electrostatic current guiding member is tubular and is disposed around the etching tube and/or the cleaning tube.
3. The wet etching base station as claimed in claim 2, wherein the electrostatic current guiding member has two slot groups, each of the slot groups includes a plurality of slots spaced along an extending direction of the electrostatic current guiding member, and the slots penetrate the electrostatic current guiding member in a radial direction; the two slot hole groups are distributed on two sides of the extension line of the static flow guide component along the radial direction and are arranged along the extension direction of the static flow guide component in a staggered mode.
4. The wet etching base station as claimed in claim 2, wherein the electrostatic guiding member has an edge slit formed along an extending direction thereof, and the electrostatic guiding member is configured to be sleeved on the etching tube and/or the cleaning tube through the edge slit.
5. The wet etching base platform of claim 1, wherein the electrostatic deflector is a polypropylene element.
6. The wet etching base platform of claim 1, wherein the electrostatic deflector is grounded.
7. The wet etching base station as claimed in claim 1, wherein the etching tube and the cleaning tube respectively comprise a main infusion tube and a branch tube, the branch tube extends radially outwards from the main infusion tube, the branch tube is connected to the reaction chamber, and the etching solution/cleaning solution is introduced into the reaction chamber from the main infusion tube through the branch tube.
8. The wet etching base platform of claim 1, wherein the wet etching base platform has at least three reaction chambers.
9. The wet etching base station as claimed in claim 8, wherein the wet etching base station has a plurality of the electrostatic deflectors, and the electrostatic deflectors are provided on a portion of the etching/cleaning pipe located between two adjacent reaction chambers.
10. A wet process chemical bench comprising the wet etch bench of any of claims 1-9.
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| CN202110119234.8A CN112735991A (en) | 2021-01-28 | 2021-01-28 | Wet etching base and wet processing chemical table |
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| CN202110119234.8A CN112735991A (en) | 2021-01-28 | 2021-01-28 | Wet etching base and wet processing chemical table |
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