CN111799168A - Wet etching method - Google Patents
Wet etching method Download PDFInfo
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- CN111799168A CN111799168A CN202010686651.6A CN202010686651A CN111799168A CN 111799168 A CN111799168 A CN 111799168A CN 202010686651 A CN202010686651 A CN 202010686651A CN 111799168 A CN111799168 A CN 111799168A
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- 238000000034 method Methods 0.000 title claims abstract description 198
- 238000001039 wet etching Methods 0.000 title claims abstract description 61
- 238000005530 etching Methods 0.000 claims abstract description 110
- 239000007788 liquid Substances 0.000 claims abstract description 66
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000003860 storage Methods 0.000 claims description 17
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
Abstract
The invention provides a wet etching method, which comprises the steps of setting the operation sequence of each process cavity; then according to the set operation sequence, introducing the heated etching liquid into each process cavity; and performing an etching process on the semiconductor substrate in each process chamber according to the set operation sequence. The plurality of process cavities can be prevented from being operated together by setting the operation sequence of the process cavities, and the heated etching liquid can be introduced into the process cavities according to the set operation sequence, so that the concentration of a large batch of etching liquid can be avoided, the concentrated heating of the large batch of etching liquid can be avoided, the temperature of the etching liquid can be effectively controlled, and the uniformity of the subsequent etching process can be improved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a wet etching method.
Background
In the field of semiconductor manufacturing, a wet etching process usually employs a wet etching device (or a wet cleaning device) for processing, and in general, the wet etching device includes a plurality of process chambers, a liquid storage tank and a heater, a semiconductor substrate can be placed in the process chambers, the heater heats etching liquid in the liquid storage tank, and the liquid storage tank provides the etching liquid to the plurality of process chambers. When the process chamber starts to operate, the etching liquid needs to be heated, and the heated etching liquid is provided into the process chamber. However, in the existing wet etching method, a plurality of process chambers of the wet etching apparatus start to operate together, and therefore, heated etching liquid needs to be provided to the plurality of process chambers at the same time, that is, a large amount of etching liquid needs to be heated (or the temperature of the large amount of etching liquid is controlled) in a time period, resulting in more etching liquid needing to be heated by the heater, so that the temperature of the etching liquid is not easily controlled, and the uniformity of substrate etching in the process chambers is affected. And after the operation of the plurality of process chambers is finished, the etching liquid needs to be recovered, and the recovered etching liquid is heated. Because a plurality of process chambers begin the operation together, lead to the etching liquid to concentrate in a large number after retrieving together, consequently, when heating the etching liquid after retrieving, its temperature is difficult for managing and control also. Therefore, a wet etching method is needed to effectively control the temperature of the etching solution.
Disclosure of Invention
The invention aims to provide a wet etching method to solve the problems that the etching temperature is not easy to control and the etching is not uniform.
In order to solve the above technical problems, the present invention provides a wet etching method, comprising:
providing wet etching equipment, wherein the wet etching equipment comprises at least two process cavities;
arranging a semiconductor substrate in each process chamber;
setting the operation sequence of each process chamber;
according to the set operation sequence, introducing the heated etching liquid into each process cavity; and the number of the first and second groups,
and performing an etching process on the semiconductor substrate in each process chamber according to the set operation sequence.
Optionally, in the wet etching method, in the set operation sequence, a certain operation interval time is provided between two adjacent process chambers in the operation sequence.
Optionally, in the wet etching method, an operation interval time between two process chambers adjacent to each other in the operation sequence is at least 50 s.
Optionally, in the wet etching method, the etching apparatus includes a liquid storage tank, a first channel, and a second channel, the etching liquid is located in the liquid storage tank, the liquid storage tank is respectively communicated with the first channel and the second channel, and each process chamber is communicated with the first channel and the second channel.
Optionally, in the wet etching method, the etching apparatus further includes a heater, and the heater is disposed on the first channel.
Optionally, in the wet etching method, when an etching process is performed on the semiconductor substrate in each process chamber, the etching liquid enters the first channel from the liquid storage tank, and is heated by the heater and then introduced into each process chamber.
Optionally, in the wet etching method, a plurality of sprayers are arranged on the first channel, and the heated etching solution is respectively introduced into each process chamber through the plurality of sprayers.
Optionally, in the wet etching method, one of the sprayers corresponds to one of the process chambers, and the sprayer is located above the semiconductor substrate in the process chamber.
Optionally, in the wet etching method, the etching solution is an organic solution.
Optionally, in the wet etching method, after the etching process is performed on the semiconductor substrate, the wet etching method further includes performing a cleaning process on the semiconductor substrate.
In the wet etching method provided by the invention, the operation sequence of each process cavity is set; then according to the set operation sequence, introducing the heated etching liquid into each process cavity; and performing an etching process on the semiconductor substrate in each process chamber according to the set operation sequence. The plurality of process cavities can be prevented from being operated together by setting the operation sequence of the process cavities, and the heated etching liquid can be introduced into the process cavities according to the set operation sequence, so that large-batch etching liquid can be prevented from being concentrated, large-batch etching liquid can be prevented from being heated together, the temperature of the etching liquid can be effectively controlled, and the uniformity of a subsequent etching process is improved.
Drawings
FIG. 1 is a schematic flow chart of a wet etching method according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a wet etching apparatus in the wet etching method provided by the embodiment of the invention;
wherein the reference numerals are as follows:
100. 100a, 100b, 100c, 100 d-process chamber; 110. 110a, 110b, 110c, 110 d-a semiconductor substrate; 120-a liquid storage tank; 130-a first channel; 140-a second channel; 150-a heater; 160-sprinklers.
Detailed Description
The wet etching method proposed by the present invention is further described in detail below with reference to the accompanying drawings and specific examples. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
The core idea of the invention is to provide a wet etching method, which comprises the steps of setting the operation sequence of each process cavity; then according to the set operation sequence, introducing the heated etching liquid into each process cavity; and performing an etching process on the semiconductor substrate in each process chamber according to the set operation sequence. The plurality of process cavities can be prevented from being operated together by setting the operation sequence of the process cavities, and the heated etching liquid can be introduced into the process cavities according to the set operation sequence, so that large-batch etching liquid can be prevented from being concentrated, large-batch etching liquid can be prevented from being heated together, the temperature of the etching liquid can be effectively controlled, and the uniformity of a subsequent etching process is improved.
Fig. 1 is a schematic flow chart of a wet etching method according to an embodiment of the invention. As shown in fig. 1, the wet etching method includes:
step S1, providing a wet etching device, wherein the wet etching device comprises at least two process cavities;
step S2, arranging a semiconductor substrate in each process chamber;
step S3, setting the operation sequence of each process chamber;
step S4: according to the set operation sequence, introducing the heated etching liquid into each process cavity;
and step S5, according to the set operation sequence, etching process is carried out on the semiconductor substrate in each process cavity.
Fig. 2 is a schematic structural diagram of a wet etching apparatus in the wet etching method according to an embodiment of the present invention. First, step S1 is executed, and as shown in fig. 2, a wet etching apparatus is provided, where the wet etching apparatus includes at least two process chambers 100, that is, the wet etching apparatus may include two or more process chambers 100, for example, a first process chamber 100a, a second process chamber 100b, a third process chamber 100c, and a fourth process chamber 100d, and the process chambers 100 may be arranged in a column, and in other embodiments of the present invention, the process chambers 100 may be arranged in a ring. The process chamber 100 is used for placing a semiconductor substrate 110, and an etching process may be performed on the semiconductor substrate 110 within the process chamber 100. Each process chamber 100 is an independent accommodating space, and two adjacent process chambers 100 are separated by a partition plate.
Next, in step S2, a semiconductor substrate 110 is disposed in each of the process chambers, for example, a first semiconductor substrate 110a is disposed in the first process chamber 100a, a second semiconductor substrate 110b is disposed in the second process chamber 100b, a third semiconductor substrate 110c is disposed in the third process chamber 100c, and a fourth semiconductor substrate 110d is disposed in the fourth process chamber 100 d. Further, the semiconductor substrate 110 may be silicon or silicon germanium with a single crystal, polycrystalline or amorphous structure, or may be a silicon-on-insulator SOI. In this embodiment, the semiconductor substrate 110 may be a silicon substrate on which a process layer is formed. Here, each of the process chambers 100 is located in a wet etching apparatus. The wet etching apparatus may include an operation area and a to-be-processed area, each semiconductor substrate 110 may be located in the to-be-processed area, each process chamber 100 may be located in the operation area, and each semiconductor substrate 110 located in the to-be-processed area is placed in the corresponding process chamber 100 by using a gripping member on the wet etching apparatus.
Next, step S3 is executed to set the operation sequence of each process chamber 100; specifically, it can be implemented by a control software of the wet etching apparatus. For example, the first process chamber 100a may start to operate first, the second process chamber 100b may start to operate, the third process chamber 100c may start to operate, and the fourth process chamber 100d may start to operate. More specifically, in the set operation sequence, two process chambers 100 adjacent to each other in the operation sequence have a certain operation interval time, and the specific operation interval time is at least 50s, that is, the interval time between the start of the operation of two process chambers 100 adjacent to each other in the operation sequence is at least 50s, for example, the interval time may be 50s, 60s, 70s, 80s, 90s, 100s, 110s, 120s, 130s, 140s, 150s, 160s, 170s, 190s, or 200 s. That is, after the first process chamber 100a starts operating for at least 50s, the second process chamber 100b starts operating, after the second process chamber 100b starts operating for at least 50s, the third process chamber 100c starts operating, after the third process chamber 100c starts operating for at least 50s, the fourth process chamber 100d starts operating, and so on. Preferably, the first process chamber 100a may also be delayed by 50 seconds before starting to operate, so as to better control the temperature of the etching solution. For example, a first semiconductor substrate 110a is placed in the first process chamber 100a after the region to be processed 50s, and operation is started (or an etching process is started).
Next, step S4 is executed to introduce the heated etching solution into each process chamber 100 according to the set operation sequence. Specifically, the etching apparatus includes a liquid storage tank 120, a first channel 140 and a second channel 150, the etching liquid is located in the liquid storage tank 120, the liquid storage tank 120 is respectively communicated with the first channel 140 and the second channel 150, and each process chamber 100 is communicated with the first channel 140 and the second channel 150. The etching solution may be an organic solution.
In addition, the etching apparatus further includes a heater 150, the heater 150 is disposed on the first passage 130, a plurality of sprayers 160 are disposed on the first passage 130, the number of the sprayers 160 is equal to the number of the process chambers 100, one sprayer 160 corresponds to one process chamber 100, and the sprayer 160 is located above the semiconductor substrate 110 in the process chamber 100. The heater 150 may heat the etching solution in the first channel 130, and the heated etching solution may be introduced into each process chamber 100 through the sprayer 160. Here, each of the sprinklers 160 can be individually controllable, and can be controlled by, for example, a switch of the wet etching apparatus, or can be controlled by software of the wet etching apparatus, for example, control software of the wet etching apparatus, so that the heated etching solution can be respectively introduced into each of the process chambers 100. Furthermore, when the first process chamber 100a starts to operate, the heater 130 heats the first part of the etching solution, the first part of the etching solution enters the first process chamber 100a after being heated, after the first process chamber 100a starts to operate for at least 50s, the second process chamber 100b starts to operate, the heater 130 heats the second part of the etching solution, and the second part of the etching solution is introduced into the second process chamber 100b after being heated; therefore, a large amount of etching solution can be prevented from being heated intensively, so that the heater 130 can effectively control the temperature of the etching solution. Further, since the temperature of the etching solution can be effectively controlled, the etching uniformity (or the average value of etching) of the subsequent semiconductor substrate 110 during the etching process can be improved.
In addition, when the heated etching liquid is provided to a process chamber, other process chambers 100 outside the process chamber that provides the heated etching liquid may be closed, for example, when the heated etching liquid is provided to the first process chamber 100a, other process chambers 100 outside the first process chamber 100a may be closed, and when the heated etching liquid is provided to the second process chamber 100b, the process chambers outside the second process chamber 100b may be closed, so as to prevent the etching liquid from sputtering, for example, the other process chambers may be closed by a shielding door of the etching apparatus, and the shielding door on the etching apparatus is the prior art, and is not described herein again.
Next, step S5 is executed to perform an etching process on the semiconductor substrate 110 in each process chamber 100 according to the set operation sequence. Specifically, when the etching process is performed on the semiconductor substrate 110 in each process chamber 100, the etching solution enters the first channel 130 from the liquid storage tank 120, is heated by the heater 150 and then is introduced into each process chamber 100, and the heated etching solution is introduced into each process chamber 100 through the plurality of sprayers 160. The semiconductor substrate 110 in each process chamber 100 is etched by the heated etching solution, and after the semiconductor substrate 110 is etched, the etching solution may enter the liquid storage tank 120 through the second channel 140, so as to circulate. Specifically, after the first process chamber 100a is finished, the first portion of the etching solution enters the liquid storage tank 120 through the second pipe 150. Then, after the second process chamber 100b is operated, a second portion of the etching solution enters the solution storage tank 120 through the second pipe 150. Here, the first portion and the etching solution may be gathered together with the second portion of the etching solution in the second pipe 150 and enter the storage tank 120 together. This is merely an example. Because the operation sequence of each process chamber 100 is set, when each process chamber 100 starts to operate, the heater 130 only needs to heat a small part of the etching solution, thereby avoiding the concentrated heating of a large amount of etching solution and effectively controlling the temperature of the etching solution.
After the etching process is performed on the semiconductor substrate 110, the wet etching method further includes cleaning the semiconductor substrate 110 in each process chamber 100 to remove contaminants (e.g., contaminants during the etching process, etc.) on the surface of the semiconductor substrate 110.
In summary, in the wet etching method provided by the invention, the operation sequence of each process chamber is set; then according to the set operation sequence, introducing the heated etching liquid into each process cavity; and performing an etching process on the semiconductor substrate in each process chamber according to the set operation sequence. The plurality of process cavities can be prevented from being operated together by setting the operation sequence of the process cavities, and the heated etching liquid can be introduced into the process cavities according to the set operation sequence, so that large-batch etching liquid can be prevented from being concentrated, large-batch etching liquid can be prevented from being heated together, the temperature of the etching liquid can be effectively controlled, and the uniformity of a subsequent etching process is improved.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (10)
1. A wet etching method is characterized by comprising the following steps:
providing wet etching equipment, wherein the wet etching equipment comprises at least two process cavities;
arranging a semiconductor substrate in each process chamber;
setting the operation sequence of each process chamber;
according to the set operation sequence, introducing the heated etching liquid into each process cavity; and the number of the first and second groups,
and performing an etching process on the semiconductor substrate in each process chamber according to the set operation sequence.
2. The wet etching method as claimed in claim 1, wherein in the set operation sequence, a certain operation interval time is provided between two adjacent process chambers in the operation sequence.
3. The wet etching method as claimed in claim 2, wherein an operation interval time between two process chambers adjacent to each other in the operation sequence is at least 50 s.
4. The wet etching method as claimed in claim 1, wherein the etching apparatus includes a liquid tank, a first channel and a second channel, the etching liquid is in the liquid tank, the liquid tank is respectively communicated with the first channel and the second channel, and each process chamber is communicated with the first channel and the second channel.
5. The wet etching method as claimed in claim 4, wherein the etching apparatus further comprises a heater disposed on the first channel.
6. The wet etching method as claimed in claim 5, wherein when an etching process is performed on the semiconductor substrate in each process chamber, the etching liquid enters the first passage from the liquid storage tank, is heated by the heater, and then is introduced into each process chamber.
7. The wet etching method according to claim 6, wherein a plurality of sprayers are arranged on the first channel, and the heated etching liquid is respectively introduced into each process chamber through the plurality of sprayers.
8. The wet etching method according to claim 7, wherein one of the sprayers corresponds to one of the process chambers, and the sprayer is located above the semiconductor substrate in the process chamber.
9. The wet etching method according to claim 1, wherein the etching liquid is an organic solution.
10. The wet etching method as claimed in claim 1, wherein after the etching process is performed on the semiconductor substrate, the wet etching method further comprises performing a cleaning process on the semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010686651.6A CN111799168A (en) | 2020-07-16 | 2020-07-16 | Wet etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010686651.6A CN111799168A (en) | 2020-07-16 | 2020-07-16 | Wet etching method |
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| Publication Number | Publication Date |
|---|---|
| CN111799168A true CN111799168A (en) | 2020-10-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202010686651.6A Pending CN111799168A (en) | 2020-07-16 | 2020-07-16 | Wet etching method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112735991A (en) * | 2021-01-28 | 2021-04-30 | 上海华力微电子有限公司 | Wet etching base and wet processing chemical table |
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|---|---|---|---|---|
| US20050183819A1 (en) * | 2004-02-24 | 2005-08-25 | Innolux Display Corp | Etching system using a deionized water adding device |
| US20050241760A1 (en) * | 2004-04-30 | 2005-11-03 | Innolux Display Corp. | Wet etching system |
| JP2011035128A (en) * | 2009-07-31 | 2011-02-17 | Tokyo Electron Ltd | Liquid processing apparatus, liquid processing method, program, and program, storage medium |
| CN106257638A (en) * | 2015-06-18 | 2016-12-28 | 株式会社思可林集团 | Substrate board treatment and substrate processing method using same |
| JP2018073960A (en) * | 2016-10-28 | 2018-05-10 | 株式会社Ｎｓｃ | Etching apparatus |
-
2020
- 2020-07-16 CN CN202010686651.6A patent/CN111799168A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050183819A1 (en) * | 2004-02-24 | 2005-08-25 | Innolux Display Corp | Etching system using a deionized water adding device |
| US20050241760A1 (en) * | 2004-04-30 | 2005-11-03 | Innolux Display Corp. | Wet etching system |
| JP2011035128A (en) * | 2009-07-31 | 2011-02-17 | Tokyo Electron Ltd | Liquid processing apparatus, liquid processing method, program, and program, storage medium |
| CN106257638A (en) * | 2015-06-18 | 2016-12-28 | 株式会社思可林集团 | Substrate board treatment and substrate processing method using same |
| JP2018073960A (en) * | 2016-10-28 | 2018-05-10 | 株式会社Ｎｓｃ | Etching apparatus |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112735991A (en) * | 2021-01-28 | 2021-04-30 | 上海华力微电子有限公司 | Wet etching base and wet processing chemical table |
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Application publication date: 20201020 |