JP2001068434A - Copper plating device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a copper-plating device wherein a Cu layer remaining at the edge and near it of a plated substrate formed in a copper-plating process is entirely removed, and possibility of causing Cu contamination (cross- contamination) is eliminated while the next CMP process is performed in a short time after copper plating. SOLUTION: Copper plating parts 111-114 where a substrate on which grooves and holes for wiring are formed is copper plated so that they are embedded by a copper plate, chemical liquid washing/outer peripheral etching process parts 107 and 108 where the substrate is washed in chemical liquid after copper plating and the copper plated film at the outer peripheral part is removed by etching, pure-water washing/drying process parts 105 and 106 for washing in pure water after etching process, and anneal process parts 103 and 104 where the substrate is heated and annealed after pure-water washing/drying process, are provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a copper plating apparatus for performing a copper plating process on a substrate to be plated having fine grooves and holes for wiring formed on a surface of a semiconductor wafer or the like, and filling the grooves and holes with copper plating. It is about.

[0002]

2. Description of the Related Art In recent years, a technique for embedding fine grooves and holes for wiring formed on the surface of a semiconductor wafer or the like by copper plating has been developed. As this copper plating, there is copper sulfate electrolytic plating. The formation of the Cu seed layer by sputtering (or CVD) performed as a pretreatment of the copper plating is performed in consideration of the area efficiency of the substrate (wafer) to be plated.
It tends to be applied to the entire surface. That is, as shown in FIG. 9, the barrier layer 80 is formed from the surface of the substrate 13 to the edge E, and the Cu seed layer 81 is formed on the surface of the substrate 13 on which the barrier layer 80 is formed.

However, when the Cu seed layer 81 having a thickness of, for example, 100 nm is formed on the entire surface of the substrate 13 by sputtering,
10, a thin Cu sputtered layer is formed not only on the surface side but also on the edge portion E of the substrate 13 to be plated.

On the other hand, the Cu plating layer 8 of the substrate 13 to be plated is
2 is formed by sealing the outer peripheral portion of the surface of the substrate 13 to be plated so that the plating solution does not adhere to the back surface of the substrate 13 to be plated, so that the Cu plating layer 82 is coated as shown in FIG. It can be formed only on the surface of the plating substrate 13.
Therefore, Cu remains in the edge portion E and in the vicinity of the edge portion E as a thin seed layer. And this remaining C
u is the substrate to be plated 13 after plating or CMP
During transport or post-treatment, the C
u contamination (cross contamination) is likely to occur.

[0005] In addition, the C
The annealing of the u-plated film proceeds only by being left at room temperature, and the specific resistance of the Cu-plated film decreases. The slope at which the specific resistance decreases varies depending on the plating conditions, chemical composition, and base conditions, and is left close to the specific resistance of the Cu bulk (lumps) by leaving the plating early for 24 hours and the plating late for 300 hours. Stabilize.

[0006] A decrease in the specific resistance means that the crystals of the Cu plating film are gradually coarsened, and it can be said that the volume of the Cu plating film is small but small. When performing the CMP process which is the next process of the plating process, Cu
The reduction of the plating film volume must be stopped. The fact that there is a difference in the time required for the reduction of the Cu plating film to stabilize depending on the plating conditions and the state of the underlayer means that the substrate to be plated after the Cu plating process is stabilized until the next step, CMP processing, is performed. This means that it is necessary to leave for the longest time before it is converted.

[0007]

SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and it is intended to completely remove an edge portion of a substrate to be plated formed by a copper plating process and a Cu layer remaining near the edge portion. It is an object of the present invention to provide a copper plating apparatus that does not cause Cu contamination (cross-contamination) due to peeling and detachment of the Cu layer during a subsequent CMP process or during transport of a substrate to be plated. .

After the copper plating, the next step, CM
It is an object of the present invention to provide a copper plating apparatus which does not need to be left for the longest stabilization time until the P treatment and can carry out the next CMP treatment in a short time.

[0009]

In order to solve the above-mentioned problems, the invention according to claim 1 is to provide a copper plating apparatus by performing copper plating on a substrate to be plated having grooves and holes for wiring formed on a surface thereof. A copper plating processing part for embedding the wiring grooves and holes with copper plating, and etching of a copper seed film and / or a thinly formed copper plating film on an outer peripheral portion of a substrate to be plated after the copper plating processing using a chemical solution. And an etching processing unit for removing.

[0010] As described above, since the copper plating apparatus is provided with the etching processing section, the copper seed film and / or the thinly formed copper plating film on the outer peripheral portion of the substrate to be plated after the copper plating processing in the copper plating processing section. Removed and the next step, C
When the copper thin film peels or separates after the MP processing or during the transportation of the substrate to be plated, there is no possibility that copper contamination (cross contamination) occurs.

The invention described in claim 2 is the first invention.
In the copper plating apparatus described in (1), a cleaning mechanism that can simultaneously perform a cleaning process on the plating surface and the anti-plating surface of the substrate to be plated after the etching process is disposed in the etching processing unit.

As described above, by disposing a cleaning mechanism capable of simultaneously cleaning the plated surface and the anti-plated surface of the substrate to be plated after the etching process, the thin copper formed on the outer peripheral portion of the substrate to be plated by the copper plating process is provided. After the thin film is removed by the etching process, the plating surface and the anti-plating surface can be washed at the same time, so that the copper plating film residue and the like after the etching treatment are removed by washing, and there is no occurrence of copper contamination or the like.

According to a third aspect of the present invention, a copper plating apparatus performs copper plating on a substrate to be plated having wiring grooves and holes formed on a surface thereof, and coats the wiring grooves and holes with copper plating. A copper plating section to be embedded with, a cleaning section for performing a cleaning process after the copper plating process, and an annealing section for heating and annealing the substrate to be plated after the cleaning process. .

Since the copper plating apparatus is provided with the annealing section as described above, the substrate to be plated which has been cleaned in the cleaning section after the copper plating in the plating section is heated in the annealing section and forcibly annealed. Therefore, it is not necessary to leave the substrate to be plated for the longest stabilization time until the copper plating film is stabilized after the copper plating process, and the CMP process as the next step can be performed.

The invention described in claim 4 is the same as the claim 3.
The copper seed film and / or the thinly formed copper plating film on the outer peripheral portion of the substrate to be plated after the copper plating treatment between the copper plating treatment part and the cleaning treatment part, using a chemical solution. It is characterized by having an etching processing part for removal.

The invention described in claim 5 is the same as the invention described in claim 3.
Alternatively, in the copper plating apparatus described in Item 4, the annealing section is a single-wafer annealing section that anneals the substrate to be plated one by one.

[0017]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing the flow of the processing steps of the copper plating apparatus of the present invention. As shown in the figure, in the present copper plating apparatus, a copper plating process is performed by copper sulfate electrolytic plating on a substrate to be plated having fine grooves or holes for wiring formed on the surface of a semiconductor wafer or the like (step ST1).
And a chemical cleaning / peripheral etching process (step ST2) of cleaning the substrate to be plated after the copper plating process with a chemical solution and etching away the thin copper film formed thinly on the outer peripheral portion of the substrate using the chemical solution. A pure water cleaning process of cleaning the substrate to be plated after the chemical solution cleaning / peripheral etching process with pure water (step ST3); and a drying process of drying the substrate to be plated washed by the pure water cleaning process (step ST3).
4) and an annealing process for heating and annealing the dried substrate to be plated (step ST5).

FIG. 2 is a diagram showing an example of a planar arrangement configuration of a copper plating apparatus for performing the above-described processes. As shown in the figure, the copper plating apparatus 100 includes a loading unit 101 and an unloading unit 1.
02, annealing processing sections 103 and 104, pure water cleaning / drying processing sections 105 and 106, chemical liquid cleaning / peripheral etching processing sections 107 and 108, temporary placement sections 109 and 110, copper plating processing sections 111 to 114, and a transport mechanism 115 , Transport mechanism 1
16 are arranged and configured.

In the copper plating apparatus having the above configuration, a cassette containing a plurality of substrates to be plated with copper is loaded into the load unit 101. A transport mechanism 115 such as a robot takes out the substrates to be plated one by one from the cassette placed on the load unit 101, transports them to the temporary placement unit 109, and places them thereon. The transfer mechanism 116 such as a robot is
09, the substrate to be plated is taken out,
Then, the substrate is carried into any one of Nos. 1 to 114, where it is subjected to electrolytic plating for a predetermined time, and the substrate to be plated is subjected to copper plating.

The substrate to be plated which has been subjected to the copper plating process is taken out by the transport mechanism 116, transported to the temporary placement section 110, and placed thereon. The transport mechanism 115 cleans the substrate to be plated placed on the temporary placement section 110 with a chemical solution cleaning / peripheral etching processing section 1.
07 or 108, where chemical cleaning of the substrate to be plated and chemical cleaning / peripheral etching for removing the copper thin film formed on the outer peripheral portion by etching are performed as described later in detail. The substrate to be plated, which has been subjected to the chemical cleaning / peripheral etching processing, is subjected to pure water cleaning / drying processing unit
05 or 106, where the cleaning and drying process is performed.

The substrate to be plated, which has been subjected to the above-mentioned washing and drying processes, is carried into the annealing section 103 or 104 by the transport mechanism 115, where it is heated and forcibly annealed. The substrate to be plated after the annealing process is accommodated in the cassette of the unload unit 102 by the transport mechanism 115, and is transferred from the unload unit 102 to the next processing step. Hereinafter, the details of the main components constituting the copper plating apparatus 100 will be described.

FIG. 3 is a diagram showing the configuration of the copper plating section 111. In addition, other copper plating processing units 112 to 114
Has the same configuration, and a description thereof will be omitted. The copper plating section 111 includes a plating bath 10, and the plating bath 10 houses a substrate holder 12 for holding a substrate 13 to be plated in a plating bath main body 11. The substrate holder 12 includes a substrate holder 12-1 and a shaft 12-2.
The shaft portion 12-2 is rotatably supported on the inner wall of the cylindrical guide member 14 via bearings 15, 15.
The guide member 14 and the substrate holder 12 can be moved up and down by a predetermined stroke by a cylinder 16 provided at the top of the plating tank main body 11.

The substrate holder 12 is driven by a motor 18 provided above the guide member 14 so that the shaft 1
It can be rotated in the direction of arrow A via 2-2. Further, the substrate holding portion 17 has a substrate holding portion 17-.
A space C is provided for accommodating the substrate pressing member 17 composed of the shaft 1 and the shaft portion 17-2.
Can be moved up and down by a predetermined stroke by a cylinder 19 provided at an upper part in the shaft portion 12-2 of the substrate holder 12.

An opening 12-1a communicating with the space C is provided below the substrate holder 12-1 of the substrate holder 12, and above the opening 12-1a, as shown in FIG. A step 12-1b on which the edge of is placed is formed. The edge of the substrate 13 is placed on the stepped portion 12-1b, and the upper surface of the substrate 13 is pressed by the substrate pressing portion 17-1 of the substrate pressing member 17 so that the edge of the substrate 13 is pressed. Is sandwiched between the board holding part 17-1 and the step part 12-1b. Then, the lower surface (plating surface) of the substrate 13 is exposed to the opening 12-1a. FIG. 4 is an enlarged view of a portion B in FIG.

The substrate 13 to be plated, which is exposed below the substrate holding portion 12-1 of the plating tank body 11, that is, in the opening 12-1a.
A plating solution chamber 20 is provided below the plating surface of, and the plating solution is jetted toward the center from the plurality of introduction nozzles 21. The plating solution chamber 2 is located outside the plating solution chamber 20.
Gutter 2 for collecting plating solution Q overflowing 0
3 are provided.

The plating solution Q collected by the collecting gutter 23 returns to the plating solution tank 24. The plating solution Q in the plating solution tank 24 is introduced by a pump 25 in the horizontal direction from the outer peripheral direction of the plating solution chamber 20. The plating solution Q introduced from the outer peripheral direction of the plating solution chamber 20 causes a uniform vertical flow to the plating substrate 13 by rotating the plating substrate 13, and the plating solution Q impinges on the plating surface of the plating substrate 13. Touch The plating solution Q that has overflowed the plating solution chamber 20 is collected by the collecting gutter 23 and is returned to the plating solution tank 24.
Flow into That is, the plating solution Q circulates between the plating solution chamber 20 of the plating tank main body 11 and the plating solution tank 24.

[0027] Plating liquid level L _Q of the plating solution chamber 20 is slightly higher than the plating liquid level L _W to be plated substrate 13 [Delta] L
And the entire surface of the plating surface of the substrate 13 to be plated is in contact with the plating solution Q.

The step 12-1b of the substrate holder 12-1 of the substrate holder 12 is provided with an electrical contact 27 electrically connected to the conductive portion of the substrate 13 to be plated. Connected to the cathode of an external plating power supply (not shown). Also, the plating tank body 11
An anode electrode 28 is provided at the bottom of the plating solution chamber 20 so as to face the substrate 13 to be plated, and the anode electrode 28 is connected to the anode of a plating power supply (not shown).
A loading / unloading slit 29 is provided at a predetermined position on the wall surface of the plating tank main body 11 for loading / unloading the substrate 13 with a substrate loading / unloading jig such as a robot arm.

When plating is performed in the copper plating processing section 111 having the above-described configuration, first, the cylinder 16 is operated to move the substrate holder 12 together with the guide member 14 by a predetermined amount (the plating target held by the substrate holder 12-1). The substrate 13 is raised to a position corresponding to the carry-in / out slit 29), and the cylinder 19 is operated to raise the substrate holding member 17 by a predetermined amount (to a position where the board holding portion 17-1 reaches the upper portion of the carry-in / in slit 29). Let it. In this state, the substrate to be plated 13 is carried into the space C of the substrate holder 12 by a substrate carrying-in / out jig such as a robot arm, and the substrate to be plated 13 is placed on the step portion 12-1b so that the plating surface faces downward. Place.
In this state, the cylinder 19 is operated to move the substrate holding portion 17-.
1 is lowered until the lower surface of the substrate 1 comes into contact with the upper surface of the substrate 13 to be plated, and the edge of the substrate 13 is sandwiched between the substrate holding portion 17-1 and the step portion 12-1b.

In this state, the cylinder 16 is operated to move the substrate holder 12 together with the guide member 14 until the plating surface of the substrate 13 to be plated contacts the plating solution Q in the plating solution chamber 20 (from the plating solution level _LQ , (To a position lower by ΔL). At this time, the motor 18 is started, and the substrate holder 12 and the substrate 13 are lowered while rotating at a low speed. The plating solution chamber 20 is filled with a plating solution. When a predetermined voltage is applied from a plating power source between the anode electrode 28 and the electric contact 27 in this state, a plating current flows from the anode electrode 28 to the substrate 13 to be plated, and a plating film is formed on the plating surface of the substrate 13 to be plated. Is done.

During the plating, the motor 18 is operated to rotate the substrate holder 12 and the substrate 13 to be plated at a low speed. The low-speed rotation is set so that a plating film having a uniform thickness can be formed on the plating surface of the substrate 13 without disturbing the vertical jet of the plating solution Q in the plating solution chamber 20.

[0032] actuating the the plating is completed cylinder 16 is raised to be plated substrate 13 and the substrate holder 12, when the lower surface of the substrate holding portion 12-1 becomes above the plating liquid surface level L _Q, the motor 18 The plating solution is rotated at high speed, and the plating solution attached to the plating surface of the substrate 13 to be plated and the lower surface of the substrate holding unit 12-1 is shaken off by centrifugal force. When the plating solution is shaken off, the substrate 13 is raised to the position of the loading / unloading slit 29, and then the cylinder 19 is operated to raise the substrate holding portion 17-1, whereby the substrate 13 is released and the substrate holding portion is released. The stage 12-1 is placed on the step 12-1b. In this state, a substrate transfer jig such as a robot arm is transferred from the loading / unloading slit 29 through the space C of the substrate holder 12.
The substrate 13 to be plated is picked up and carried out.

FIG. 5 shows a chemical cleaning / peripheral etching processing section 1.
FIG. 7 is a diagram showing a configuration of the third embodiment. The chemical cleaning / peripheral etching processing unit 108 has the same configuration, and a description thereof will be omitted. The chemical cleaning / peripheral etching processing unit 107 includes:
A rotation mechanism 30 that rotates while holding the substrate 13 to be plated;
The configuration includes two cleaning nozzles 31 and 33 and one etching nozzle 35.

The rotation mechanism 30 is configured to transmit the power of a motor 36 to the rotation mechanism 30 via pulleys 37 and 39 and a belt 38 to rotate the rotation. Although two plating support members 32 are shown in FIG.
Approximately eight are provided in the rotation mechanism 30, and are configured to hold the outer periphery of the substrate 13 so that the substrate 13 is horizontal.

The cleaning nozzle 31 is located at a position close to the surface side of the substrate 13 to be plated, that is, the surface on which the plating process has been performed. Are located. As the chemical cleaning liquid a injected from the cleaning nozzle 31, a chemical cleaning liquid that does not etch the copper plating film and is effective for metal contamination and particle contamination is used. That is, for example, two-stage treatment of dilute sulfuric acid or dilute hydrofluoric acid (DHF), or ion water, or ozone water and dilute hydrofluoric acid, or hydrogen peroxide (H ₂ F ₂ ) and dilute hydrofluoric acid as necessary. Use one of the step processes.

The cleaning nozzle 33 is installed at the center of the lower surface of the substrate 13 to be plated, that is, the surface of the substrate 13 that has not been subjected to plating. The cleaning nozzle 33 has a structure in which the chemical cleaning liquid b is sprayed in a conical scattering shape.
As the chemical cleaning liquid b sprayed from the cleaning nozzle 33, a chemical cleaning liquid capable of removing Cu adsorbed on, for example, silicon of a semiconductor wafer, which is a base of the substrate 13 to be plated, is used. For example, if necessary, diluted sulfuric acid or diluted hydrofluoric acid (D
HF), or two-stage treatment with ionized water or ozone water and dilute hydrofluoric acid, or two-stage treatment with hydrogen peroxide (H ₂ F ₂ ) and dilute hydrofluoric acid.

As shown in FIG. 6, the etching nozzle 35 is positioned at a predetermined dimension k (k ≦ 5 mm) of 5 mm or less from the edge of the substrate 13 to be plated. The direction of the center line 1 of the ejection port at the tip of 35 is perpendicular to the surface of the substrate 13 to be plated (θ1
= 90 °).

The orientation of the etching nozzle 35 is as follows.
As shown in FIG. 7, 5 mm from the edge of the substrate 13 to be plated.
The position of the ejection port of the etching nozzle 35 is set at a position of a predetermined dimension k (k ≦ 5 mm) or less, and the direction of the center line 1 of the ejection port at the tip of the etching nozzle 35 is set with respect to the surface of the substrate 13 to be plated. May be set at a predetermined angle θ2 (θ <90 °) so as to face the outer peripheral direction rather than the vertical direction.

Although only one etching nozzle 35 is provided in the above embodiment, a plurality of etching nozzles may be provided. It is preferable that the liquid flow jetted from the etching nozzle 35 be converged as thinly as possible because the etching boundary becomes sharp. And this etching nozzle 3
As the etchant c sprayed from 5, the one used for etching a copper thin film is used. That is, for example, if necessary, a two-stage treatment of a mixed solution of sulfuric acid and hydrogen peroxide, a mixed solution of hydrofluoric acid and nitric acid, or sodium peroxide, or sulfuric acid, or nitric acid, or ion water, or ozone water and dilute hydrofluoric acid Use one of

Next, the operation of the chemical cleaning / peripheral etching processing section 107 having the above configuration will be described. That is, as shown in FIG. 5, the plated substrate 13 after the copper plating process is held by the plated substrate support member 32 with the surface (front surface side) subjected to the copper plating facing up, and the motor 36 is activated to start the plating. Plating substrate 1
Rotate 3 At the same time, the chemical cleaning liquid is jetted from both the cleaning nozzles 31 and 33, and simultaneously the etching liquid c is jetted from the etching nozzle 35. Alternatively, the etching solution is initially sprayed only for a predetermined time only from the etching nozzle 35, and then the chemical solution cleaning solution a,
Inject b.

The chemical cleaning liquid a sprayed from the cleaning nozzle 31 contacts the central portion of the surface of the substrate 13 to be plated, and then rotates the substrate 13 to be plated.
This spreads over the entire surface, whereby metal contamination and particle contamination on the surface side of the substrate 13 to be plated are cleaned and cleaned.

The chemical cleaning liquid b sprayed from the cleaning nozzle 33 has a cone-shaped scattered shape and comes into contact with the back surface of the substrate 13 to be plated, and then uniformly adheres to the entire lower surface of the substrate 13 by rotation of the substrate 13. As a result, metal contamination and particle contamination on the back surface side of the substrate 13 are cleaned and cleaned.

The etchant c ejected from the etching nozzle 35 strikes the surface of the substrate 13 perpendicularly as indicated by the arrow shown in FIG. 6, but the substrate 13 is rotating, so that the centrifugal force is applied. As a result, the etching liquid c flows to the outer peripheral side from the contact position, and adheres only to the outer peripheral portion. Thereby, as shown in FIG. 8, only the outer peripheral portion where the etching liquid c is adhered is selectively etched. That is, by this selective etching, an unnecessary thin Cu layer adhered to the edge portion E of the substrate to be plated 13 shown in FIG. 9 by sputtering or the like and an incomplete plating film at the time of packing generated during plating can be removed. The drains of the chemical cleaning liquids a and b and the etching liquid c are discharged from the discharge port 34.

FIG. 11 is a diagram showing a configuration example of the pure water cleaning / drying processing unit 105. The pure water washing / drying processing unit 10
6 is the same as that of FIG. The pure water cleaning / drying unit 105 includes a rotating mechanism 40 that holds and rotates the substrate 13 to be plated, and two cleaning nozzles 42, 4.
3 is provided.

The rotating mechanism 40 is configured to transmit the power of the motor 45 to the rotating mechanism 40 via pulleys 46 and 48 and a belt 47 and to rotate the same. Although two plating supporting members 41 are shown in FIG.
Approximately 8 are provided in the rotation mechanism 40, and are configured to hold the outer periphery of the substrate 13 to be plated so that the substrate 13 is horizontal. Cleaning nozzles 42, 4
Reference numeral 3 denotes a structure in which the pure water cleaning liquid d is sprayed in a conical scattering shape, and the pure water cleaning liquid d is sprayed on the upper and lower surfaces (front and rear surfaces) of the substrate 13 to be plated.

In the pure water cleaning / drying processing section 105 having the above configuration, the chemical liquid cleaning / peripheral etching processing section 107 or 1
At 08, the substrate to be plated 13 having been subjected to the etching removal of the outer peripheral edge portion of the Cu and the cleaning with the chemical solution is transferred to the pure water cleaning / drying processing unit 105 by the transport mechanism 115, and the periphery thereof is sandwiched and held by the substrate to be plated support member 41. You. In this state, the motor 45 is started to rotate the substrate 13 to be plated, and at the same time, the pure nozzle cleaning liquid is jetted from the cleaning nozzles 42 and 43,
The upper and lower surfaces of the substrate to be plated are cleaned. The washed liquid is discharged from the discharge port 49.

When the cleaning with the pure water cleaning solution is completed, the motor 45 is operated at a high speed to rotate the rotating mechanism 40 and the substrate 13 to be plated at a high speed. Thus, the pure water cleaning liquid d attached to the substrate-to-be-plated support member 41 and the substrate-to-be-plated 13 is scattered by centrifugal force and dried.

FIG. 12 is a view showing the appearance of the annealing section 103, and FIG. 13 is a partial sectional view thereof. Since the annealing section 104 has the same configuration as the annealing section 103, the description thereof is omitted. As shown, the annealing unit 103 has a configuration in which a plurality of (four in the figure) heating furnaces 50 are stacked. Each heating furnace 50 has the inside shown in FIG.
As shown in FIG. 2, a predetermined interval is provided above and below the heater 52,
On the upper surface of the lower heater 52, a plurality of pins 54 for mounting the substrate 13 to be plated are provided. Although the drawing shows radiation type heating in which heaters 52 and 53 as heat sources are provided above and below the substrate 13 to be plated, hot plate type heating in which the substrate to be plated is placed on a hot plate may be used.

The entire surface of each heating furnace 50 is covered with the substrate 13 to be plated.
A loading / unloading port 51 for loading / unloading the loading / unloading port is provided, and a shutter 55 for opening / closing the loading / unloading port 51 is provided inside. The substrate 13 to be plated, which has been subjected to the pure water cleaning and drying processing in the pure water cleaning / drying processing unit 105 or 106,
It is carried into the heating furnace 50 from the carry-in / out port 51 by the hand 115 a of the transport mechanism 115, placed on the pins 54, heated by the upper and lower heaters 52 and 53 at a predetermined temperature for a predetermined time, and annealed. The substrate to be plated 13 after the annealing process is carried out of the heating furnace 50 through the carry-in / out port 51 by the hand 115a.

The above annealing treatment is performed at a temperature of 70 ° C. under normal pressure.
Perform at ９０90 ° for 5-30 minutes. In this case, N ₂ containing of H ₂
When performed in an atmosphere, surface oxidation of the Cu plating film is suppressed. Further, under reduced pressure (1-10 ^-6 torr), the temperature 2
Annealing may be performed at 50 ° C. to 350 ° C. for 5 to 30 minutes. In the case of in-line annealing, it is preferable to perform annealing at a low temperature in consideration of the size of the apparatus and thermal exhaust.

The copper plating section 111, chemical cleaning / peripheral etching section 107, pure water cleaning / drying section 10
5 and the configuration of the annealing section 103 are merely examples, and the configuration of each processing section constituting the copper plating apparatus of the present invention is not limited to this. The point is that any specific structure can be used as long as it can perform copper plating, chemical cleaning / peripheral etching, pure water cleaning, drying, and annealing.

[0052]

As described above, according to the invention described in each claim, the following excellent effects can be expected.

According to the first aspect of the present invention, since the copper plating apparatus is provided with the etching section, the copper thin film formed thinly on the outer peripheral portion of the substrate to be plated after the copper plating processing in the copper plating section. The copper thin film is removed and removed after the next step of the CMP process or during the transportation of the substrate to be plated, so that there is no possibility that copper contamination (cross contamination) occurs.

According to the second aspect of the present invention, by providing a cleaning mechanism capable of simultaneously cleaning the plating surface and the anti-plating surface of the substrate to be plated after the etching process, the substrate to be plated by the copper plating process is provided. After removing the thin copper film formed on the outer periphery by etching, the plating surface and the anti-plating surface can be washed at the same time. Disappears.

According to the third aspect of the present invention, since the copper plating apparatus is provided with the annealing section, the substrate to be plated which has been subjected to the copper plating processing in the plating section and the cleaning processing in the cleaning section is annealed. Since it can be heated and forcibly annealed in the processing section, it is not necessary to leave the substrate to be plated for the longest stabilization time until the copper plating film is stabilized after the copper plating processing. Can be implemented.

According to the fourth aspect of the present invention, an etching section is provided between the copper plating section and the cleaning section. When the copper plating film of the present invention is peeled or separated, an effect of eliminating the possibility of causing copper contamination (cross contamination) can be obtained.

[Brief description of the drawings]

FIG. 1 is a view showing a flow of a processing step of a copper plating apparatus according to the present invention.

FIG. 2 is a diagram showing an example of a planar arrangement configuration of each processing unit of the copper plating apparatus according to the present invention.

FIG. 3 is a diagram showing a configuration example of a copper plating section of the copper plating apparatus according to the present invention.

FIG. 4 is an enlarged view of a portion B in FIG. 3;

FIG. 5 is a diagram showing a configuration example of a chemical solution cleaning / peripheral etching processing section of the copper plating apparatus according to the present invention.

FIG. 6 is a diagram showing an example of an arrangement state of an etching nozzle.

FIG. 7 is a diagram showing an example of an arrangement state of an etching nozzle.

FIG. 8 is an enlarged view of a main part showing a state where a substrate to be plated is etched.

FIG. 9 is an enlarged view of a main part of a substrate to be plated.

FIG. 10 is an enlarged view of a main part of a substrate to be plated.

FIG. 11 is a diagram showing a configuration example of a pure water cleaning / drying processing section of the copper plating apparatus according to the present invention.

FIG. 12 is a diagram showing an example of an external configuration of an annealing section of the copper plating apparatus according to the present invention.

FIG. 13 is a diagram showing an example of a cross-sectional configuration of an annealing section of the copper plating apparatus according to the present invention.

[Explanation of symbols]

 REFERENCE SIGNS LIST 100 Copper plating apparatus 101 Load section 102 Unload section 103 Annealing section 104 Annealing section 105 Pure water cleaning / drying section 106 Pure water cleaning / drying section 107 Chemical cleaning / peripheral etching processing section 108 Chemical liquid cleaning / peripheral etching processing Part 109 Temporary placement part 110 Temporary placement part 111 Copper plating processing part 112 Copper plating processing part 113 Copper plating processing part 114 Copper plating processing part 115 Transport mechanism 116 Transport mechanism

 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Naoaki Kogure 11-1 Haneda Asahimachi, Ota-ku, Tokyo F-term in Ebara Corporation (reference) 4M104 BB04 DD52 DD79 FF18 HH20

Claims (5)

[Claims] A copper plating section for applying copper plating to a substrate to be plated having grooves and holes for wiring formed on a surface thereof and embedding the grooves and holes for wiring with copper plating; A copper plating apparatus comprising: an etching processing unit that removes a copper seed film and / or a thinly formed copper plating film on an outer peripheral portion of a plating substrate by etching using a chemical solution. 2. The copper plating apparatus according to claim 1, wherein a cleaning mechanism capable of simultaneously performing a cleaning process on the plating surface and the anti-plating surface of the substrate to be plated after the etching process is disposed in the etching processing unit. A copper plating apparatus characterized by the above-mentioned. 3. A copper plating section for applying copper plating to a substrate to be plated having grooves and holes for wiring formed on a surface thereof and embedding the grooves and holes for wiring with copper plating, and cleaning after the copper plating processing. What is claimed is: 1. A copper plating apparatus, comprising: a cleaning processing unit for performing processing; and an annealing processing unit for heating and annealing the substrate to be plated after the cleaning processing. 4. The copper plating apparatus according to claim 3, wherein a copper seed film and / or copper thinly formed on an outer peripheral portion of the substrate to be plated after the copper plating treatment between the copper plating treatment part and the cleaning treatment part. A copper plating apparatus, comprising: an etching processing unit that removes a plating film by etching using a chemical solution. 5. The copper plating apparatus according to claim 3, wherein the annealing section is a single-wafer annealing section that performs an annealing process on the substrate to be plated one by one. .