JP2007525591A - Multiple chemical plating systems - Google Patents

Abstract

Embodiments of the present invention generally provide an electrochemical plating system. The plating system includes a substrate loading station located in communication with a main frame processing platform, at least one substrate plating cell located in the main frame, at least one substrate bevel cleaning cell located in the main frame, A stack type substrate annealing station positioned in communication with at least one of the frame and the load station, and each chamber in the stack type substrate annealing station includes a heating plate, a cooling plate, and a substrate transfer robot. ing.
[Selection] Figure 1

Description

Background of the Invention

Field of Invention
[0001] Embodiments of the present invention generally relate to electrochemical plating systems.

Explanation of related technology
[0002] Metallizing sub-quarter micron-size features is a fundamental technology for current and future generations of integrated circuit manufacturing processes. More specifically, in devices such as very large scale integrated devices, ie devices having an integrated circuit with more than one million logic gates, the multilevel interconnects present in the center of these devices are generally high aspect ratios. It is formed by filling interconnect features with a ratio, i.e., an aspect ratio greater than about 4: 1, with a conductive material such as copper. Traditionally, deposition techniques such as chemical vapor deposition (CVD) and physical vapor deposition (PVD) have been used to fill these interconnect features. However, as interconnect sizes have decreased and aspect ratios have increased, filling void-free interconnect features with conventional metallization techniques has become increasingly difficult. Therefore, plating techniques, namely electrochemical plating (ECP) and electroless plating, have emerged as promising processes for void-free filling of sub-quarter micron high aspect ratio interconnect features in integrated circuit manufacturing processes did.

  [0003] For example, in an ECP process, a sub-quarter micron high aspect ratio feature formed on the surface of a substrate (or a layer deposited thereon) can be efficiently filled with a conductive material. it can. The ECP plating process is generally a two-step process, in which first a seed layer is formed on the surface features of the substrate (typically by PVD, CVD, or other deposition process in a separate tool) and then The surface features of the substrate are exposed to the electrolyte solution (in the ECP tool), during which an electrical bias is applied between the copper anode and the seed layer located in the electrolyte solution. The electrolytic solution generally includes ions to be plated on the surface of the substrate, so that when an electrical bias is applied, these ions are plated onto the biased seed layer, and thus the ions on the surface of the substrate. A layer can be deposited to fill the feature.

  [0004] Once the plating process is complete, the substrate is generally transferred to at least one of a substrate rinse cell or a bevel cleaning cell. The bevel edge cleaning cell is typically configured to dispense an etchant around or on the bevel to remove unwanted metal plated thereon. A substrate rinse cell, often referred to as a spin rinse dry cell, generally operates to rinse the substrate surface (both front and back) with a rinsing solution and remove contaminants therefrom. In addition, these rinse cells are often configured to spin the substrate at a high rate to spin off residual fluid droplets adhering to the substrate surface. When the residual fluid droplets are spun off, the substrate is generally clean and dry and is therefore ready to be transferred from the ECP tool. A bevel cleaning cell generally operates to clean a substrate bevel by dispensing an etchant solution onto the bevel while the substrate is rotated under a fluid dispensing nozzle. The etchant solution serves to clean unwanted material generated during the plating process from the bevel.

  [0005] Thereafter, the cleaned / rinsed substrate is often transferred to an annealing chamber where the substrate is heated to a temperature sufficient to anneal the deposited film. However, the throughput of conventional plating systems can be limited by the availability of the annealing chamber, as the annealing process on the semiconductor substrate after plating can take several minutes. In addition, once the annealing process is complete, the annealed substrate typically requires several minutes to cool to a temperature that allows the substrate to be transferred to another processing chamber or apparatus.

  [0006] Embodiments of the present invention generally have a plurality of plating cells that can use a plurality of chemicals, a substrate rinse cell, a substrate cleaning cell, and a two-position anneal chamber that are in communication with all of them. Provide chemical plating system.

Summary of the Invention

  [0007] Embodiments of the present invention generally provide an electrochemical plating system. The plating system includes a substrate loading station located in communication with a main frame processing platform, at least one substrate plating cell located in the main frame, at least one substrate bevel cleaning cell located in the main frame, A stack type substrate annealing station positioned in communication with at least one of the frame and the load station, and a heating plate, a cooling plate, and a substrate transfer robot are located in each chamber in the stack type substrate annealing station. Has been.

  [0008] Embodiments of the present invention generally include a substrate loading station located in communication with a mainframe processing platform, at least one substrate plating cell located on the mainframe, and at least one located on the mainframe. A substrate bevel cleaning cell; and a stack type substrate annealing station positioned in communication with at least one of the main frame and the load station. A heating plate and a cooling plate are positioned in each chamber in the stack type substrate annealing station. Provide an electrochemical plating system like that.

  [0009] Embodiments of the present invention further provide a plurality of chemical plating systems. The plating system includes a plurality of plating cells located on a common platform, a cleaning cell located on the platform, an annealing chamber located in communication with the platform, and communicated with the platform and in fluid communication with the plurality of plating cells. And a plurality of chemical fluid delivery systems located in a plurality of locations, wherein the fluid delivery system is configured to mix and distribute a plurality of fluid solutions to each of the plurality of plating cells.

  [0010] Embodiments of the present invention further provide an electrochemical plating system having a central mainframe in which a substrate transfer robot is located. The main frame communicates with the main frame to mix a plurality of plating chemicals, a plurality of electrochemical plating cells positioned on the main frame, and a plurality of chemicals in each of the plurality of electrochemical plating cells. Means for delivering a solution, wherein the means for delivering is in fluid communication with the mixing means; means for removing unwanted deposits from the substrate bevel; means for rinsing and drying the substrate; and annealing the substrate. And means for performing.

  [0011] Embodiments of the present invention further provide a multiple chemical electrochemical plating system. The system includes an electrochemical plating cell located on the processing platform. The electrochemical plating cell comprises a cell body configured to contain a plating solution and having an overflow weir, an anode located in the cell body, a position above the anode and below the overflow weir. An ion membrane located across the cell body, wherein the ion membrane separates the anolyte compartment below the membrane from the catholyte compartment above the membrane, and above the membrane and And a porous diffusion member positioned in the cell body under the overflow weir. The system further includes a substrate cleaning cell located on the processing platform and a stacked substrate annealing station located in communication with the processing platform.

  [0012] In order that the foregoing features of the invention may be more fully understood, the invention briefly summarized above will now be described in more detail with reference to a few embodiments illustrated in the accompanying drawings. However, the attached drawings show only typical embodiments of the present invention, and therefore do not limit the scope of the present invention in any way, and the present invention is also acceptable to other equally effective embodiments. Please be careful.

Detailed Description of the Preferred Embodiment

  [0045] Embodiments of the present invention generally provide a multiple chemical electrochemical plating system configured to plate a conductive material on a semiconductor substrate. The plating system generally includes a substrate load area that communicates with the substrate processing platform. This load area generally receives a substrate storage cassette and transfers substrates received from the cassette to a processing platform for processing. This load area is generally located between the loading station and the processing platform, or between the loading station and the processing platform, to the substrate and from the cassette, and to the processing platform, or to the loading area, a substrate annealing chamber located in communication with the processing platform. A robot configured to transfer to a designated link tunnel. The processing platform generally comprises at least one substrate transfer robot and a plurality of substrate processing cells: an ECP cell, a bevel cleaning cell, a spin rinse drying cell, a substrate cleaning cell, and / or an electroless plating cell. The system of the present invention allows the introduction of a dry substrate into a wet processing platform, and the plating, cleaning (surface and bevel), drying and annealing processes can be performed on an integrated system platform. The plating process can utilize a number of plating chemistries, and the output of the system is a dry, clean (both surface and bevel) and annealed substrate.

  [0046] FIG. 1 is a top view of an ECP system 100 of the present invention. The ECP system 100 includes a factory interface (FI) 130 that is generally called a substrate loading station. The factory interface 130 includes a plurality of substrate loading stations configured to interface with the substrate storage cassette 134. A robot 132 is positioned at the factory interface 130 and is configured to access a substrate contained in the cassette 134. In addition, the robot 132 extends to a link tunnel 115 that connects the factory interface 130 to a processing mainframe or platform 113. The position of the robot 132 is such that the robot accesses the substrate cassette 134 to remove the substrate therefrom and then delivers the substrate to one of the processing cells 114, 116 located on the main frame 113 or to the annealing station 135. It can be so. Similarly, the robot 132 can be used to recover substrates from the processing cells 114, 116 or annealing chamber 135 after the substrate processing sequence is complete. In this state, the robot 132 returns the substrate to one of the cassettes 134 so that it can be removed from the system 100.

  [0047] Annealing station 135, described in detail below, generally comprises a two-position annealing chamber, with cooling plate / position 136 and heating plate / position 137 in adjacent positions, in the vicinity thereof, eg, two stations. A substrate transfer robot 140 is positioned therebetween. The robot 140 is generally configured to move a substrate between each heating plate 137 and cooling plate 136. Further, although the anneal chamber 135 is shown positioned to be accessed from the link tunnel 115, embodiments of the present invention are not limited to a particular configuration or arrangement. Accordingly, the annealing station 135 may be located in direct communication with the main frame 113, i.e. accessed by the main frame robot 120, or alternatively, the annealing station 135 may be in a position communicating with the main frame 113, That is, the annealing station is located in the same system as the main frame 113, but is not in direct contact with the main frame 113, that is, may not be accessed from the main frame robot 120. For example, as shown in FIG. 1, the annealing station 135 may be located in direct communication with the link tunnel 115, which allows access to the main frame 113, and thus the annealing chamber 135 is connected to the main frame 113. Shown as communicating with.

  [0048] As described above, the ECP system 100 also includes the processing main frame 113 in which the substrate transfer robot 120 is located in the center. The robot 120 generally includes one or more arms / blades 122, 124 that are configured to support and transfer a substrate. In addition, the robot 120 and associated blades 122, 124 generally move in an extended, rotating, and vertical direction so that the robot 120 is located on the main frame 113 at a plurality of processing locations 102, 104, 106, 108, 110, 112, 114, and 116 are configured so that the substrate can be inserted into and removed from the substrate. Similarly, the factory interface robot 132 is also capable of allowing linear movement along the robot track extending from the factory interface 130 to the main frame 113 while rotating, extending, and vertically moving its substrate support blade. It has. In general, the processing locations 102, 104, 106, 108, 110, 112, 114, 116 may be any number of processing cells used in an electrochemical plating platform. More specifically, these processing locations include electrochemical plating cells, rinse cells, bevel cleaning cells, spin rinse drying cells, substrate surface cleaning cells (which collectively include cleaning, rinsing and etching cells), no It may be configured as an electroplating cell, metrology inspection station, and / or other processing cell that can be advantageously used in connection with a plating platform. Each processing cell and each robot typically communicates with the process controller 111, which receives inputs from both the user and / or various sensors located in the system 100 and based on those inputs the system 100. The microprocessor-based control system may be configured to appropriately control the operation.

  [0049] In the exemplary plating system shown in FIG. 1, the processing location can be configured as follows. The processing locations 114 and 116 may be configured as an interface between the wet processing station of the main frame 113 and the dry processing areas of the link tunnel 115, the annealing chamber 135 and the factory interface 130. The processing cells placed at these interface locations may be spin rinse drying cells and / or substrate cleaning cells. More specifically, each location 114 and 116 may include a spin rinse drying cell and a substrate cleaning cell in a stacked configuration. The locations 102, 104, 110 and 112 may be configured as plating cells, for example, either electrochemical plating cells or electroless plating cells. Locations 106, 108 may be configured as substrate bevel cleaning cells. Additional configurations and implementations of electrochemical processing systems are commonly assigned in the United States, entitled “Multi-Chemistry Electrochemical Processing System,” filed December 19, 2002, which is hereby incorporated by reference in its entirety. Patent application 10 / 435,121.

  [0050] FIG. 2 is a partial perspective and cross-sectional view of an exemplary plating cell 200 that may be implemented at processing locations 102, 104, 110, and 112. FIG. The electrochemical plating cell 200 generally includes an outer basin 201 and an inner basin 202 positioned in the outer basin 201. The inner basin 202 is generally configured to contain a plating solution that is used to plate a metal such as copper on the substrate during the electrochemical plating process. During the plating process, the plating solution is generally supplied to the inner basin 202 (eg, at about 1 gallon / min for a 10 liter plating cell), so the plating solution is the top point of the inner basin 202. (Generally referred to as “weir”) always overflows and is collected by the outer basin 201, from which it is discharged for chemical management and recirculation. The plating cell 200 is typically positioned at an angle of inclination, i.e., the frame portion 203 of the plating cell 200 is generally lifted on one side and the components of the plating cell 200 are inclined at about 3 ° to about 30 °, or generally For optimum results, the tilt is between about 4 ° and about 10 °. The frame member 203 of the plating cell 200 supports an annular base member on the top thereof. Since the frame member 203 is lifted on one side, the upper surface of the base member 204 is generally inclined from the horizontal at an angle corresponding to the angle of the frame member 203 relative to the horizontal position. The base member 204 is formed with an annular or disk-shaped recess at the center thereof, and the annular recess is configured to receive the disk-shaped anode member 205. The base member 204 further includes a plurality of fluid inlet / outlet ports 209 extending from the lower surface thereof. Each of these fluid inlet / outlets 209 is generally configured to individually supply or discharge fluid from the anode compartment or cathode compartment of the plating cell 200. The anode member 205 is generally formed with a plurality of slots 207 extending therethrough, and these slots 207 are generally positioned parallel to each other across the surface of the anode 205. This parallel orientation allows the dense fluid generated on the anode surface to flow downward across the anode surface into one of the slots 207. The plating cell 200 further includes a membrane support assembly 206. The membrane support assembly 206 is generally secured to the base member 204 at its outer periphery and includes an interior region configured to allow fluid penetration. A membrane 208 is stretched across the support 206 and serves to fluidly separate the catholyte and anolyte chamber portions of the plating cell. The membrane support assembly may include an O-ring type seal located near the periphery of the membrane, the seal from one side of the membrane secured to the membrane support 206 to the other side of the membrane. It is configured to prevent fluid from moving. The diffusion plate 210, which is typically a porous ceramic disc member, is configured to generate a substantially laminar or uniform flow of fluid in the direction of the substrate being plated, and in the cell, the membrane 208, Located between the substrate being plated. The exemplary plating cell is further shown in commonly assigned US patent application Ser. No. 10 / 268,284, filed on Oct. 9, 2002 under the name “Electrochemical Processing Cell” And claims priority to US Provisional Patent Application No. 60 / 398,345, filed July 24, 2002, both of which are hereby incorporated by reference in their entirety.

  [0051] FIG. 3 is a perspective view illustrating a stack anneal system 300 of the present invention. The stack anneal system 300 may be located at the anneal station 135 shown in FIG. 1, or may be located elsewhere in the processing platform, if desired. The annealing system 300 generally includes a frame 301 that is configured to support the various components of the annealing system 300. At least one annealing chamber 302 is positioned on the frame member 301 at a height that facilitates access to the robot of the processing system, ie, the main frame robot 120 or the factory interface robot 132. In the illustrated embodiment, the annealing system 300 includes three annealing chambers 302 stacked vertically in the vertical direction. However, embodiments of the present invention are not limited to a specific number of annealing chambers or a specific spacing or orientation of the chambers relative to each other. This is because various spacings, numbers and orientations can be implemented without departing from the scope of the present invention. The annealing system 300 includes an electrical system controller 306 positioned on top of the frame member 301. The electrical system controller 306 generally operates to control the power supplied to each component of the anneal system 300, and more specifically, the electrical system controller 306 is delivered to the heating elements of the anneal chamber 302. The power is controlled so that the temperature of the annealing chamber can be controlled. The annealing system further includes a fluid and gas supply assembly 304 that is generally located in the frame member 301 under the annealing chamber 302. The fluid and gas supply assembly 304 is generally configured to supply an anneal gas, eg, nitrogen, argon, helium, hydrogen, or other inert gas suitable for semiconductor process anneal, to each anneal chamber 302. . The fluid and gas supply assembly 304 may also be used to cool the fluid delivered to the anneal chamber 302, for example, the cooling fluid used to cool the chamber body 302 and / or the annealed substrate after the heating portion of the anneal process is complete. Is also configured to supply and regulate. For example, the cooling fluid may be chilled or cold feed water. Supply assembly 304 may further include a vacuum system (not shown) in individual communication with each anneal chamber 302. The vacuum system may operate to remove ambient gas from the anneal chamber 302 prior to initiating the anneal process and may be used to support a reduced pressure anneal process. Thus, the vacuum system allows a reduced pressure anneal process to be performed in each anneal chamber 302 and further allows different pressures to be used simultaneously in each anneal chamber 302 without interfering with adjacent chambers 302 in the stack.

  [0052] FIG. 4 is a top perspective view illustrating the anneal chamber 302 of the present invention with the chamber cover or lid removed to reveal internal components. The annealing chamber 302 generally includes a chamber body 401 that defines an enclosed processing volume 400. The enclosed processing volume 400 includes a heating plate 402 and a cooling plate 404 positioned close to each other. Adjacent to these heating and cooling plates is a substrate transfer mechanism 406 that receives the substrate from outside the processing volume 400 and moves the substrate between each heating and cooling plate during the annealing process. Configured to transport. The substrate transfer mechanism 406 generally includes a pivoted robot assembly in which a substrate support member / blade 408 is positioned at the distal end of the robot's pivot arm. The blade 408 includes a plurality of substrate support tabs 410 that are spaced apart from the blade 408 and configured to co-support the substrate. Each support tab 410 is generally spaced vertically (generally downward) from the main body portion 408 of the blade, creating a vertical space between the blade 408 and the tab 410. This space allows the substrate to be positioned on the tab 410 during the substrate loading process, which will be described in further detail. In addition, each of the heating and cooling plates 402, 404 has a corresponding number of notches 416 formed in its outer periphery, which are notched when the blade member 408 is lowered toward each heating and cooling plate 402, 404. In addition, the spacing and configuration of the tabs 410 are received cooperatively.

  [0053] In another embodiment of the present invention, the transfer mechanism 406 includes a reinforced blade member 500, as shown in FIG. The blade member 500 includes an integral frame member 501 configured to maintain its structural shape, i.e., the integral blade member 501 moves (sway, bend, bend, etc.) the structure itself. Is designed to minimize the shape). The integral frame member 501 has a substrate support ring or member 502 attached to the lower part of the frame member 501. The substrate support member 502 includes a substrate support tab 503 (similar to the tab 410 shown in FIG. 4) positioned radially inward with respect to the frame member 501. These tabs, like the tabs 410, are spaced apart and configured to support the substrate and be received in the notches 416 of each heating and cooling plate.

  [0054] For example, an anneal chamber body 401, which can be made of aluminum, generally defines an internal processing volume 400. The outer body 401 generally has a plurality of fluid conduits (not shown) formed therethrough that are configured to circulate cooling fluid to lower the temperature of the outer body 401. The cooling fluid is supplied to a fluid conduit formed in the external body 401 and is circulated through the external body 401 by the cooling fluid connection unit 420.

  [0055] The cooling plate 404 generally comprises a substantially flat top surface configured to support a substrate. The top surface includes a plurality of vacuum apertures 422 that are selectively in fluid communication with a vacuum source (not shown). These vacuum apertures 422 can generally be used to create a vacuum on the top surface of the cooling plate 404 to fix or vacuum chuck the substrate to the top surface. A plurality of fluid conduits may be formed within the cooling plate, and the fluid conduits are in fluid communication with a cooling fluid source used to cool the chamber body 401. When a fluid conduit is implemented in the cooling plate, the cooling plate can be used to quickly cool the substrate located there. Alternatively, the cooling plate may be manufactured without forming a cooling channel, and in this embodiment the cooling plate is more cooled than the embodiment in which the cooling plate is essentially cooled by a cooling conduit formed therein. Can be used to cool at a slow rate. Further, as described above, the cooling plate 404 includes a plurality of notches 416 formed around the plate 404 that are not in the blade when the substrate support blade 408 is lowered to the processing position. Spaced to receive tab 410.

  [0056] The heating plate 402, like the cooling plate 404, has a substantially flat substrate support top surface. A plurality of vacuum apertures 422 are formed on the substrate support surface, and each of the vacuum apertures 422 is selectively in fluid communication with a vacuum source (not shown). Thus, the vacuum aperture 422 can be used to vacuum chuck the substrate to the heating plate 402 for processing. The interior of the heating plate 402 includes a heating element (not shown) that is configured to heat the surface of the heating plate 402 to a temperature of about 100 ° C. to about 500 ° C. The heating element may include, for example, an electrically driven resistive element or a hot fluid conduit formed in the heating plate 402, which is also configured to heat the surface of the heating plate 402. . Alternatively, the annealing chamber of the present invention may use external heating devices such as lamps, inductive heaters, or resistive elements located above or below the heating plate 402. Further, as described above, the heating plate 402 has a plurality of notches 416 formed around the plate 402 that are tabbed when the substrate support blade 408 is lowered to the processing position. Spaced to accept 410.

  FIG. 6 is a perspective view and partial cross-sectional view of the heating plate 402. The cross-sectional view of the plate 402 shows the heating plate base member 608 in which the resistance heating element 600 is located. The resistance heating element is surrounded by an interior 610 of the heating plate 402 as shown in FIG. More particularly, the interior 610 is formed with a channel that is sized and spaced to receive the heating element 600. A top plate 612 is positioned on the interior 610. The top, interior, and base members 608 are generally made of a metal having the desired thermal conductivity characteristics, such as aluminum. Further, the three sections of the plate 402 can be brazed together to form an integral heat transfer plate 402. The lower portion of the plate 402, that is, the bottom surface of the base member 608 includes a stem 606 that supports the plate 402. This stem is generally substantially smaller in diameter than the plate member 402 to minimize heat transfer to the base or wall of the chamber. More particularly, the stem member is generally less than about 20% in diameter of the heating plate 402. Further, the lower portion of the stem 606 includes a thermocouple 604 for measuring the temperature of the heating plate 402 and a power connection 602 for conducting power to the heating element 600.

  [0058] The anneal chamber may include a pump down aperture 424 positioned in fluid communication with the processing volume 400. The pump down aperture 424 is generally configured to exhaust fluid from the processing volume 400 in selective fluid communication with a vacuum source (not shown). In addition, the anneal chamber generally includes at least one gas dispense port 426 or gas dispense showerhead located near the heating plate 402. The gas dispense port is selectively in fluid communication with a process gas source or supply 304 and is therefore configured to dispense process gas into the process volume 400. The gas dispense port 426 may be, for example, a gas shower head assembly located inside the annealing chamber. In order to minimize the ambient gas content in the annealing chamber, the vacuum pump down aperture 424 and the gas dispensing nozzle may be used in concert or selectively, i.e. both components, or one or the other component. May be used.

  [0059] The anneal chamber 302 includes a substrate transfer mechanism actuator assembly 418 in communication with the robot 406. This actuator 418 is generally configured to control both the pivoting movement of the blade 408 and the height or Z position of the blade relative to the heating or cooling member. For example, the access door 414, which may be a slit valve type door, is generally located on the outer wall of the body portion 401. The access door 414 is generally configured such that it opens to allow access to the processing volume 400 of the anneal chamber 302. Accordingly, the access door 412 opens and the robot 412 (eg, the robot 132 from the exemplary FI or the exemplary mainframe substrate transfer robot 120 shown in FIG. 1) enters the processing volume 400 and anneals. The substrate can be dropped into one of the chambers 302 or the substrate can be recovered therefrom.

  [0060] More specifically, the process of inserting the substrate into the anneal chamber includes, for example, the blade 408 at a load position, ie, where the tab 410 is positioned vertically above the top surface of the cooling plate 404. Including positioning on the cooling plate 404. As briefly mentioned above, blade 408 and tab 410 are positioned relative to each other such that there is a vertical space between the upper surface of tab 410 and the lower surface of blade 408. This vertical space is configured to allow the robot blade 412 supporting the substrate to be inserted into this vertical space and then lowered to allow the substrate to transition from the blade 412 to the substrate support tab 410. When the substrate is supported by the tab 410, the external robot blade 412 can be retracted from the processing volume 400 and the access door 414 can be closed to isolate the processing volume 400 from the surrounding atmosphere. In this embodiment, when the door 414 closes, a vacuum source in communication with the pump down aperture 424 can be activated to pump a portion of the gas from the process volume 400. During this pumping process, or shortly thereafter, the process gas nozzle (s) 426 may be opened to allow process gas to rush into the process volume 400. The process gas is generally an inert gas that is known not to react under annealing conditions. This configuration, i.e., the pump down and inert gas push process, is generally configured to remove as much oxygen as possible from the anneal chamber / process volume. This is because oxygen has been found to oxidize the substrate surface during the annealing process. When the chamber reaches a predetermined pressure and gas concentration, the vacuum source may be terminated and the gas flow may be stopped, or alternatively, the vacuum source may be kept operational during the annealing process and a gas delivery nozzle may be provided. The processing gas may continue to flow into the processing volume.

  [0061] In another embodiment of the present invention, no vacuum source is used to purge unwanted gases, ie, oxygen-containing gases, from the process volume. Rather, positive process gas pressure is used to minimize the oxygen content in the process volume 400. More particularly, when the door 414 is opened, the gas supply 426 to the process volume 400 can be activated to establish a positive pressure in the process volume. This positive pressure creates a gas flow outward from the anneal chamber when the door 414 is opened, which minimizes the amount of oxygen entering the process volume 400. This process may be combined with a vacuum pump down process to increase the likelihood of removing oxygen from the process volume.

  [0062] Once the substrate is positioned on the blade member 408, the substrate can be lowered to the cooling plate 404 or the heating plate 402. The process of lowering the substrate to the heating plate 402 or the cooling plate 404 generally involves positioning the substrate support tab 410 over a notch 416 formed around the plate with the blade member 408 positioned over each plate. Including. The blade member 408 is then lowered so that the tab 410 is received in the notch 416. When the substrate support tab 410 is received in the notch 416, the substrate supported by the tab 410 is transferred to the upper surface of each heating or cooling plate. This transfer process generally includes actuating a vacuum aperture 422 formed on the top surface of the plate to secure the substrate therein so that it does not move when placed on the top surface. The heating plate is generally heated to a predetermined annealing temperature of about 150 ° C. to about 400 ° C. prior to placing the substrate therein. Other temperature ranges for the heating plate include, for example, about 150 ° C to about 250 ° C, about 150 ° C to about 325 ° C, and about 200 ° C to about 350 ° C. The substrate is positioned on the heating plate 402 for a predetermined period of time, for example from about 15 seconds to about 15 seconds based on the desired annealing temperature and time required to form the desired structure in the layer deposited on the substrate. Annealed for 120 seconds.

  [0063] Once the heating portion of the annealing process is complete, the substrate is transferred to the cooling plate 404. This transfer process terminates the vacuum chuck operation and then lifts the blade member 408 upward until the tab member 410 engages and supports the substrate, i.e., the tab 410 lifts the substrate off the heating plate surface. Including. The blade member 408 can then be pivoted from the heating plate 402 to the cooling plate 404. When on the cooling plate 404, the blade 408 can be lowered to position the substrate on the cooling plate 404. Similar to the lowering process described below, the vacuum aperture 422 can be operated to secure the substrate to the upper surface of the cooling plate 404 simultaneously with lowering the substrate to the cooling plate.

  [0064] The cooling plate is generally maintained at a low temperature of about 15 ° C. to about 40 ° C., so that the cooling plate accepts or attenuates heat from a substrate located at or near the plate. Operate. This process can cool from an annealing temperature to less than about 70 ° C., or more particularly from about 50 ° C. to about 100 ° C. in less than 1 minute, or more specifically in less than about 15 seconds. Can be used. More particularly, the cooling plate can be used to rapidly cool the substrate to about 50 ° C. to 70 ° C. in less than about 12 seconds. Once the substrate has cooled to the desired temperature, the blade 408 can be used to raise the substrate from the cooling plate 404. With the substrate raised, the door 414 can be opened and an external robot blade 412 can be inserted into the processing volume and used to remove the substrate from the blade member 408. Once the substrate is removed, another annealing substrate can be placed in the annealing chamber and the above-described annealing process can be repeated.

  [0065] In another embodiment of the invention, the substrate temperature may be gradually raised to the annealing temperature or lowered to the cooling substrate temperature. More specifically, the robot arm 406 can be lowered to a position just above the heating plate 402, ie, a position spaced from the plate 402 by an air gap or space. The air gap between the substrate and the heating plate 402 functions as a thermal buffer for slowing the temperature rise of the substrate. For example, the heating plate 402 may be heated to about 210 ° C. and then the substrate may be located about 1 mm to about 5 mm away from the heating plate 402. Heat from the plate 402 is slowly transferred to the substrate across the air gap or space between the substrate and the heating plate 402 (slow relative to the heat transfer rate when the substrate is located directly on the heating plate 402). ). The rise time to the annealing temperature can be further adjusted by adjusting the substrate spacing, i.e. the substrate can be located closer to the heating plate if a rapid rise time is desired. Similarly, the rise time may be extended by taking the substrate further away from the heating plate, ie increasing the air gap. The rise time may be, for example, about 10 seconds to about 45 seconds. As the substrate temperature rises to the annealing temperature, the substrate may then be lowered onto the heating plate 402 for the remainder of the annealing process. Similarly, the robot can be positioned away from the cooling plate to lower the cooling temperature as needed.

  [0066] FIG. 8 is a partial perspective view and cross-sectional view illustrating a substrate spin rinse drying cell 800 of the present invention. The spin rinse drying cell 800 (SRD) includes a fluid bowl / body 801 supported on a frame that can be attached to a plating system, such as the main frame 113 shown in FIG. The SRD 800 further includes a rotatable hub 802 positioned at the center of the fluid bowl 801. The hub 802 has a generally flat top surface on which a plurality of backside fluid dispensing nozzles 808 are formed, as well as at least one gas dispensing nozzle 810 (as nozzle 503 in FIG. 5). Is also shown). A plurality of upright substrate support fingers 803 are positioned radially around the hub 802. In the illustrated embodiment of the present invention, four fingers 803 are shown (see FIG. 12), but the present invention is not limited to a specific number of fingers. The fingers 803 are configured to rotatably support the substrate 804 at its bevel edge for processing with the SRD 800. The top of the SRD 800 includes a generally dome-shaped lid member 805 that operates to enclose the processing space below the dome 805 and above the hub 802. Further, the dome member 805 is positioned therein to dispense processing fluid to at least one gas nozzle 807 configured to dispense processing gas into the processing space and a substrate 804 secured to the finger 803. Configured fluid manifold 806. At least one side of the SRD 800 is provided with a door or opening (not shown) that can be selectively opened and closed to provide access to the processing area of the SRD 800. The lower part of the SRD 800 includes an annular shield member 812 positioned around the deep dish. This shield 812 is located under the substrate support member 802 and radially outward and is therefore configured to spill fluid outwardly around the basin. Further, the shield 812 is configured to be operable in the vertical direction, as will be described in detail below.

  [0067] In another embodiment of the present invention, the processing space is limited at the top by a lid or top member. In this embodiment, the processing cell 800 includes a lower discharge pan and upstanding sidewalls, but the upper portion of the processing space is generally open. Further, in this embodiment, fluid dispensing nozzles or manifolds are generally located or mounted on the upstanding side wall portion of the cell. For example, a fluid dispensing arm may be pivotally attached to the side wall so that the distal end of the arm where the fluid dispensing nozzle is located can be pivotally rotated to a location on the substrate being processed in the cell. The pivoting movement of the arm is generally performed on the substrate being processed and in a plane parallel to it, so that the pivoting movement of the arm causes the nozzle located at the end of the arm to It is allowed to be located on a radial position, i.e. on the center of the substrate or on a point at a certain radius from the center of the substrate. Apart from this repositioning of the fluid dispensing nozzle, this embodiment of the present invention is structurally similar to and functionally similar to the previous embodiment. For example, FIG. 9 is a partial perspective view and cross-sectional view illustrating another substrate spin rinse drying cell of the present invention. In the embodiment of the present invention, the SRD cell is substantially similar to the cell shown in FIG. 8, but the SRD cell shown in FIG. 9 does not include the lid 805. Thus, the SRD cell shown in FIG. 9 is not surrounded during the rinse process. Another difference between the SRD cell shown in FIG. 8 and the embodiment shown in FIG. 9 is that the SRD shown in FIG. 9 acts to replace the fluid dispense manifold 806 formed in the lid 805. The nozzle 850 is provided. The nozzle 850 is configured to pivot outwardly over the substrate surface to dispense a processing fluid, generally deionized water, onto the substrate surface near the center of the substrate. Furthermore, the cell wall 809 can be moved up and down with the attached shield 814 and the curved surface 816 to facilitate substrate loading and unloading operations. For example, when loading a substrate, the wall 809 can be lowered to allow access to the substrate support fingers 803. When processing begins, the wall 809 is raised to position the catch cup 814 and the curved wall 816 next to the substrate to capture the fluid that is spun off from the substrate and to surround the substrate, as described in detail below. The air flow can be controlled.

  [0068] FIGS. 10A-10D show details of finger member 803 of exemplary SRD 800. FIG. More specifically, FIG. 10A is a top perspective view illustrating the substrate engagement fingers 803 in the closed position. The substrate engaging finger assembly generally includes a base 1007 from which an upstanding pivotable airfoil / clamp member 1000 extends. The finger assembly further includes a lower actuator portion 1008 (shown in FIG. 10C), which is located inward of the upstanding airfoil portion 1000 and is pivotally attached to a pivot point 1002. The air foil 1000 is generally a blade-shaped member as viewed from above, and is configured to rotate in the processing space while minimizing the amount of air flow turbulence. The leading edge of the airfoil 1000, that is, the side of the airfoil that first comes into contact with the air when the finger 803 is rotated, causes the air that contacts the finger 803 to generate turbulence or unwanted air flow in the processing space. Rather, it is rounded to provide a minimum drag and turbulent flow path for passing through the finger 803. The trailing edge of the airfoil 1000, ie the edge of the airfoil opposite the rounded leading edge, is generally smaller in cross section than the rounded edge, as shown in FIG. 10A. The leading and trailing edges are connected by a generally smooth and sometimes arcuate or curved surface 1005. Thus, when the airfoil 800 is rotated, the airflow thereon is smooth and causes minimal turbulent air action in the processing space. The smooth surface 1005 includes a horizontally oriented notch or channel 1006 that is sized and configured to receive and engage the bevel edge of the substrate 804 during processing. The channel 1006 generally extends horizontally across the surface 1005, ie, extends in a direction generally perpendicular to the vertical axis of the airfoil 1000.

  [0069] The finger 803 further includes an internal fixation post 1001 that is securely attached to the base member 1007. The post 1001 extends upward through an exposed channel formed on the inner surface 1005 of the pivotable airfoil member 1000. Accordingly, as shown in FIG. 10C, the post 1001 remains fixed while the airfoil 1000 is pivotally rotated via the pivot member 1002. Further, a substrate support surface 1004 is formed at the upper end of the post 100. The support surface 1004 is a generally horizontal portion configured to support the substrate, and a vertical or angled portion located radially outward of the horizontal portion, which is radially inward of the post 1001. A portion for guiding the substrate to the support surface 1004 and a horizontal notch or slot 1006 that engages the bevel of the substrate 804 supported by the post 1001 and the airfoil 1000.

  [0070] FIG. 10B is a top perspective view showing the fingers 803 in an open or load position. More specifically, when the finger member is in the open position, the airfoil is pivoted outward to expose the upper surface of the fixed post 1001. The airfoil 1000 may be pivoted to this position by the upward movement of the actuator portion 1008. This movement causes the upper end of the airfoil 1000 to pivot outward as a result of the placement of the pivot point 1002. As a result of the pivoting movement of the air foil 1000, the upper substrate support surface of the post member 1001 is positioned so that the substrate can be positioned thereon.

  [0071] FIG. 10D is a side view of the finger assembly in the open position, showing how the upper surface 1004 of the post 1001 extends from the airfoil 1000 so that the substrate support surface 1004 supports the edge of the substrate. Indicates where it is located. FIG. 10D is a side perspective view and FIG. 10A is a plan view showing the finger assembly in a closed or processing position. The closed position generally corresponds to the position of post 1001 relative to airfoil 1000 where substrate 804 is secured to hub 802 for processing (via finger 803). Similarly, the open position generally corresponds to the position of the post 1001 relative to the airfoil 1000 where the substrate support top 1004 of the post 1001 is positioned to receive the substrate. Thus, the open position is essentially the substrate loading position and the closed position is essentially the substrate processing position. In the closed position (FIGS. 10A and 10C), the substrate is beveled by a horizontal slot 1006 in the airfoil 1000 pivoted inwardly about a pivot point 1002 to engage the substrate for processing. Supported.

  [0072] The process of manipulating the finger members generally includes mechanically engaging and moving the lower actuator portion 1008 in the vertical direction. For example, when the lower actuator portion 1008 is moved vertically or upward, the airfoil member 803 is pivotally rotated outward to expose the substrate support post 1001. The lower actuator portion is operated vertically through a vertical operation of a shield member 812 positioned to mechanically engage the lower actuator portion. Thus, when the substrate is loaded onto the finger, the shield 812 is raised to open the finger to the substrate receiving / loading position. Once the substrate is loaded, the shield 812 can be lowered to engage the substrate in the slot 1006 for the rinse process. The unload process can be performed in a substantially similar manner.

  [0073] FIG. 11 is a partial cross-sectional view of the hub 802 shown in FIG. The hub 802 is generally mounted rotatably via a central support member located on the lower surface thereof. The interior of the central support member includes a conduit 1101 configured to communicate the rinsing fluid through a fluid dispense manifold 1102 to a plurality of fluid dispense apertures 1103 formed on the top surface 1104 of the hub 802. Further, the central support member is also generally formed with a second conduit (not shown) configured to communicate dry gas to a plurality of gas dispense purge ports 1104. Furthermore, embodiments of the present invention may combine fluid and gas conduits into a single conduit and use a valve assembly to switch between fluid and gas supplied to that single conduit.

  [0074] FIG. 12 is a top perspective view showing the lower portion of the hub assembly 802. FIG. More particularly, although hub assembly 802 may be a unitary element, embodiments of the present invention also contemplate that hub assembly 802 may include individual elements that rotate independently. For example, FIG. 12 illustrates the lower portion of the hub assembly 802. The illustrated lower portion is generally a disc-like member having a central aperture 1200 formed thereon. The outer portion of the lower disk-shaped member includes a flat upper surface 1201 and a plurality of substrate engaging fingers 803 positioned radially around the upper surface 1201. In this configuration, the gas and fluid delivery aperture formed on the surface 1104 as shown in FIG. 11 may be located in the central aperture 1200 formed in a separate element from the disc-like member shown in FIG. . In this configuration, the central portion of hub 802 (the portion represented by surface 1104 that may be located on aperture 1200) is fixed while the outer portion of hub 802 (represented by the disk-like member shown in FIG. 12). May rotate relative to its fixed inner part. This allows fluid and gas dispensing nozzles to dispense each of those fluids over the entire area of the substrate as the members rotate relative to each other.

  [0075] During operation, the spin rinse drying cell 800 generally receives a substrate, rinses the substrate with a rinsing fluid, and then spins the substrate to dry the substrate by expelling fluid from the substrate surface with centrifugal force. However, it operates to dispense dry gas into the substrate receiving cell to further accelerate the drying process. The substrate may be located in the cell 800 via a door that can be located on one side of the cell 800, or the cell 800 may comprise, for example, two or more doors located on either side of the cell, with the substrate on one side. Then, it may be carried into the cell 800 and taken out from the cell 800 on the other side. The substrate is typically positioned in the cell 800 by a substrate transfer robot that generally supports the substrate from below, so that when the substrate is transferred to the cell 800, it is generally configured with the surface facing up. Located on the finger 803. The finger 803 is actuated to an open position, that is, a position where the upper surface 1004 of the fixed post 1001 is exposed. When the upper surface 1004 is exposed, the robot can lower the substrate into a plurality of fingers 803 and support the substrate with the upper surface 1004 of each finger 803. The top of the fixed post may include an inwardly inclined surface 1010 that is configured to guide the substrate inward or to center the substrate relative to each post 1001. When the substrate is positioned in the horizontal plane 1004, the robot blade can be retracted from the cell 800 and the door can be closed to isolate the internal processing volume of the cell 800 from the surrounding atmosphere.

  [0076] Once the substrate is positioned on the upper surface 1004 of the substrate support finger 803, the substrate support finger 803 can be manipulated to engage the bevel edge of the substrate. More specifically, the lower end 1008 of the finger 803 can be manipulated downward to pivot the upper end inward toward the substrate supported by the surface 1004. As the upper end of airfoil 1000 pivots inwardly, a horizontal notch or groove 1006 (shown in FIGS. 10C and 10D) engages the bevel edge of the substrate to secure the substrate between each finger 803. When the bevel edge of the substrate engages the airfoil groove 1006, it removes the substrate from support by the upper surface 1004 of the fixed post member 1001, and by a horizontal notch or slot 1006 configured to provide minimal contact with the substrate surface. The substrate is supported for exclusive processing via bevel edge engagement.

  [0077] Once the substrate is secured to the substrate support fingers 803, processing can begin. In general, the processing in cell 800 includes rinsing and drying the substrate located there. This rinsing and drying process generally involves rotating the substrate, and thus the fingers 803 are generally secured to a rotatable type hub 802, as shown in FIG. As the substrate rotates, a fluid dispensing nozzle can dispense rinsing fluid on the front, back or both sides of the rotating substrate. Fluid dispensed on the front side of the substrate can be dispensed by a manifold 806 located on the lid member 805, while fluid dispensed on the back side of the substrate is dispensed by a fluid aperture 1103 formed in the hub 802. be able to. While various rinsing solutions suitable for semiconductor processing are contemplated within the scope of the present invention, one example of a rinsing solution that can be dispensed onto a substrate to rinse its surface is DI. Furthermore, since the substrate is rotating during the process of dispensing rinsing fluid there, the fluid is generally forced radially outward toward the periphery of the substrate. In this way, fluid flows away from the bevel edge of the substrate and is collected at the bottom of the cell 800. When the rotational speed of the hub 802 is high, the fluid flows outward and leaves the substrate surface almost horizontally, while using a low rotational speed causes the rinsing fluid to move outward across the substrate surface. Allow to be spun off by centrifugal force after wrapping around the substrate bevel slightly.

  [0078] Once the substrate has been rinsed for a predetermined time, the rinsing process may be interrupted. This generally corresponds to interrupting the flow of rinse fluid to the substrate, but generally the rotation of the substrate is maintained after the rinse fluid dispensing process is complete. This continuous rotation serves to push away residual droplets of rinse fluid that may adhere to or stick to the substrate surface, radially away from the substrate surface. Further, the drying gas can be dispensed into the processing area and directed to the substrate surface to further facilitate removal of residual fluid from the substrate surface. For example, nitrogen can be dispensed into the process volume via the upper purge nozzle 807 and the lower purge aperture 1104 while the substrate is being spin dried.

  [0079] Once the drying process is complete, the substrate can be removed from the cell 800. This process generally involves reversing the substrate introduction process, and more particularly generally involves opening one of the doors to allow the robot to access the substrate. When the door is opened, the robot blade can be placed in the processing volume below the substrate and brought closer to the substrate. The substrate support finger 803 can then be manipulated to the open position, ie, pushing the actuator 1008 upward and pivoting the top end of the airfoil 1000 outward to disengage the substrate from the horizontal groove or slot 1006. . The substrate can then be positioned on the top surface 1004 of the internal fixation post 1001. The robot blade can then be manipulated upward to lift the substrate away from the surface 1004 and the substrate can be removed from the processing volume via the door.

[0080] The spin rinse drying process illustrated herein can generally include a multi-step process. The first step of this process (the pre-rinse top surface) consists of about 1000 ml to about 1500 ml of rinsing solution rotating the substrate at about 900 rpm to about 1700 rpm, typically about 1300 rpm, for about 2 seconds to about 6 seconds. Dispensing on the manufacturing or top surface of the substrate. The second step (front rinse top and back) is to rotate the substrate at about 100 rpm to about 140 rpm while applying about 1000 ml to about 1500 ml of rinse solution to the substrate production surface and about 600 ml to about 1000 ml of rinse solution. Dispensing on the back of the substrate in about 6 seconds. The third step (backside cleaning) rotates at about 40 rpm to about 90 rpm and dispenses about 200 ml to about 500 ml of chemicals, typically H ₂ O ₂ and H ₂ SO ₄ , onto the back of the substrate while Dispensing about 1000 ml to about 1500 ml of rinsing solution, which typically serves to clean the back surface, on the production surface for about 10 seconds. The fourth step (post-rinse) dispenses about 1000 ml to about 1500 ml of rinsing solution onto the substrate surface while rotating at about 40 rpm to about 90 rpm for about 10 seconds to about 16 seconds, while about 600 ml to about 1000 ml. Dispensing a rinsing solution on the backside of the substrate. The fifth step (volumetric fluid spin removal) terminates the flow of fluid to both sides and then allows the substrate to flow at about 400 rpm to about 600 rpm at about 400 rpm to about 600 rpm so that back purge gas (nitrogen) flows at a flow rate of about 2 to about 4 cfm. Including spinning for 3 seconds to about 6 seconds. The sixth step (volumetric flow spin removal) involves purging the backside of the substrate with a flow rate of about 2 to about 4 cfm for about 4 seconds while rotating the substrate at about 600 rpm to about 900 rpm. The seventh step (drying) includes rotating the substrate at about 2000 rpm to about 3000 rpm for about 10 seconds to about 20 seconds with no gas flow or fluid flow.

  [0081] Further, the SRD cell of the present invention is known to generate an air flow pattern that prevents backflow or back splash of the rinse fluid onto the substrate from preventing efficient drying of the substrate. Configured. The SRD cell is configured to minimize the backflow of air, ie, the flow of air toward the center of the substrate, with the cell catch cup shield 814 and the contoured outer surface 816, as shown in FIG. In particular, the catch cup shield extends radially inward from the cell wall 809 and is positioned so that the distal termination annulus of the shield 814 ends just below the bottom surface of the substrate at a point radially outward of the substrate. The The contoured portion of wall 816 is the opposite side of the contour that ends above the substrate and the lower end of the contour is below the bottom surface of the substrate, generally opposite the annular end of catch cup 814. That is, it is shaped so as to end toward the end. This configuration allows fluid that has been spun off from the substrate to be received by the catch cup 814 and to flow down through the catch-up 814 through holes formed in the catch-up 814. Further, the radially outward (spiral) airflow generated by the rotation of the substrate is channeled over the catchup and directed downwards by the contoured surface 816. This air stream can travel through the hole and exhaust from below the chamber through the reduced pressure region 818. Therefore, the SRD cell configuration of the present invention generates a radially outward air flow that does not reverse direction toward the center of the substrate, which causes the fluid mist to return to the substrate surface and prolong the drying process. To prevent.

  [0082] FIG. 13 is a top perspective view illustrating a bevel cleaning cell or chamber 1300 of the present invention. As described above, the bevel cleaning cell 1300 may be located at any of the processing locations 102, 104, 106, 108, 110, 112, 114, and 116 shown in the system 100. However, in the illustrated embodiment of the present invention, the bevel cleaning cell 1300 is generally located at the processing locations 106 and 108. FIG. 13 is a top perspective view illustrating a bevel cleaning cell 1300, and FIG. 13 generally shows the upper components of the bevel cleaning cell 1300. These components generally comprise a central bowl or chamber having an upstanding wall portion 1301 and a discharge basin 1302 communicating with the lower portion of the wall 1301. This central bowl is generally made of a plastic material, a nylon-based material, or a metal material coated with a non-metal. This material is generally selected such that it does not react with the semiconductor processing etchant solution. The discharge basin 1302 is generally configured to receive a processing fluid and channel the processing fluid to a fluid discharge section (not shown). A central portion of the deep plate 1302 includes a substrate chuck 1303. The substrate chuck 1303 may generally be any type of substrate chuck used in semiconductor processing, but is configured to be rotatable and / or vertically operable. More specifically, the substrate chuck 1303 may be a vacuum chuck having at least one vacuum aperture formed on its upper surface, where the vacuum aperture is selectively in fluid communication with the vacuum source to provide a vacuum source and a vacuum. The aperture cooperates to fix the substrate to the substrate chuck 1303 by applying a negative pressure to the volume between the substrate chuck 1303 and the substrate. The substrate chuck 1303 is generally supported by a mechanical mechanism located under the discharge basin 1302, which provides rotational movement to the chuck 1303 and any vertical movement to the chuck 1303. Configured, i.e., this mechanical mechanism is configured to arbitrarily raise and lower the chuck 1303 to engage and disengage from the substrate located at the substrate centering pin 1304, as described in detail below. The Further, the discharge basin may include a shield or cover positioned on the surface of the basin, the shield or cover being formed with an aperture for a component extending therethrough upwardly. .

  [0083] The upper portion of the wall 1301 generally comprises a curved member (similar to the curved portion 809 shown in the SRD illustrated in FIG. 8). This curved member serves to generate an outward and downward air flow around the substrate as the substrate is rotated, which is generally a process that is known to be acidic and cause defects in the plating layer. It serves to prevent the fluid from bouncing backwards or forming fog on the substrate surface. More specifically, when rotating, the substrate essentially acts like a pump that pushes air outward across the substrate surface in the direction of the wall. In conventional cells, a region of high pressure is generated near the periphery of the cell, which reverses the air flow and causes it to flow upward and backward across the substrate surface. The curved walls channel the air flow to the low pressure region generated by, for example, a vacuum pump, thus eliminating the high pressure region and its associated back bounce. Without the curved surface below this wall, the outward air flow is allowed to travel upward when it hits the wall and reverse direction towards the center of the substrate. This reverse flow returns the fluid suspended in the air flow across the substrate surface. Thus, the curved wall is configured to channel the outwardly moving air stream into the reduced pressure area for capture without reversing or reversing direction across the substrate surface.

  [0084] The discharge basin 1302 also includes a plurality of substrate centering pins 1304 extending upward therefrom. The centering pins 1304 are generally positioned radially around the discharge pan / shield 1302, for example, in an equidistant arrangement. However, the pins 1304 may be positioned in any desired spacing arrangement. For example, in the embodiment shown in FIG. 13, three substrate centering pins 1304 are located around the discharge basin 1302 in 120 ° increments, but the pins 1304 are, for example, 20 °, 180 °, and 340. It may be located at °. Substrate centering pin 1304 is generally supported by a substrate centering mechanism, described below, positioned below basin 1302, which operates pin 1304 vertically and generally places pin 1304 around the center of rotation of pin 1304. It is also configured to rotate about the longitudinal axis of the corresponding pin 1304. The bevel cleaning cell 1300 further includes at least one rinse solution dispense arm 1305 along with at least one etchant solution dispense arm 1306. In general, both arms 1305 and 1306 are pivotally attached to the peripheral portion of bevel wash cell 1300 and at least one fluid dispensing nozzle is located at the distal end of the longitudinally extending arm. The nozzle is positioned so as to dispense each processing fluid on the first surface or upper surface of the substrate positioned on the support member 1303. More specifically, when the processing cell 1300 is configured as a processing cell with the surface up, that is, when the substrate is positioned in the cell with its production surface facing away from the basin 1302, The fluid dispensing nozzle is configured to dispense each of those fluids onto the manufacturing surface of the substrate. The operation of arms 1305 and 1306 is generally controlled by a system controller, which is configured to accurately position the distal end of each arm on a specified radial position of the substrate being processed (each This (through a pivoting and / or vertical operation of the arm) dispenses fluid from the nozzles located at each end of the arm to the exact radial location of the substrate being processed in the bevel cleaning cell 1300. Is allowed. Further, although the illustrated embodiment shows two arms for separately dispensing a rinse solution, which may be deionized water, and an etchant solution, which may be acidic, embodiments of the invention Is not limited to a particular number of fluid dispensing arms. More particularly, other embodiments of the present invention may embody a single pivot arm on which both the rinse solution dispense nozzle and the etchant solution dispense nozzle are located. However, in this configuration, the arrangement of each of the rinse solution nozzle and the etchant solution nozzle becomes more important. This is because the bevel cleaning process generally requires that the etchant solution be accurately dispensed around the exclusion zone of the substrate being processed, i.e. around the outer 2-5 mm of the substrate. In addition, each of the arms 1305 and 1306 may include a mechanism configured to prevent fluid from dripping from the nozzle when the nozzle is not activated from touching the substrate. For example, the nozzle may include a vacuum port or wick valve (not shown) configured to receive unwanted fluid droplets during the off time. Alternatively, the nozzle may include a gas aperture configured to blow unwanted fluid droplets off the substrate surface.

  [0085] FIG. 14 is a top perspective view illustrating the back fluid dispense manifold 1400 of the present invention. This backside fluid dispense manifold 1400 is generally positioned in the fluid discharge basin 1302 between the substrate centering pins 1304. Manifold 1400 generally includes a V-shaped structure with two far ends. A fluid dispensing nozzle 1401 is located at each end. Manifold 1400 can perform vertical and pivoting operations to specifically position each fluid dispensing nozzle 1401 relative to the substrate being processed in cell 1300. This configuration allows manifold 1400 to simultaneously dispense process fluid onto the non-fabricated surface or back of the substrate while pivoted fluid dispensing arms 1305 and 1306 dispense process fluid onto the substrate fabrication or front surface. To do.

  [0086] FIG. 15 is a perspective view illustrating a substrate centering mechanism 1500 of the present invention. The centering mechanism 1500 is generally positioned below the basin 1302 and its frame member 1505 has a plurality of receptacles 1506 configured to receive and secure substrate centering pins 1304. The frame 1505 may communicate with an operating mechanism configured to move the frame member 1505 and its associated components, ie, raise and lower the frame member 1505. In the illustrated embodiment, the frame 1505 includes three receptacles 1506 that are configured to receive substrate centering pins 1304. The lower part of each receptacle 1506 extends through the frame member 1505 to the opposite side as shown in FIG. Further, each receptacle 1506 is rotatably mounted within the frame 1505 so that the receptacle 1506 can be rotated in the direction indicated by the arrow “A” on the receptacle, and thus a substrate secured to the receptacle. The centering pin 1304 can also be rotated. In general, operating arms or eccentric cam members 1503 and 1504 are attached to the lower portion of each receptacle 1506 extending below the frame 1505. Each of these operation arms 1503 and 1504 is also connected to another operation arm 1503 via a connection member that may be a solid linkage, a belt, a hydraulic member, or the like, that is, a linkage 1502. In addition, a selectively actuated operating device 1501 is configured to mechanically communicate with the primary arm member 1504 and selectively impart pivotal movement thereto.

  [0087] Each of the receptacles 1506 is rotatably mounted within each portion of the frame member 1505, and each lower extension portion of the receptacle 1506 includes an actuator 1503 and a linkage 1502 attached thereto, so that the actuator 1501 When the primary arm member 1504 is operated by the above-mentioned operation, the pivoting movement to the actuator arm 1504 occurs, and the other arm 1503 and the corresponding receptacle 1506 are pivoted together with the primary arm 1504 in a direct correspondence manner. More specifically, each receptacle 1506 receives a substrate centering pan 1304, and when the actuator 1501 pivots through the primary arm 1504, the corresponding receptacle 1506 on the arm 1504 is also pivoted. Further, since the linkage 1502 can determine the secondary pivot arm 1503 relative to the primary pivot arm 1504, the pivoting movement of the primary pivot arm 1504 is converted into a corresponding pivoting movement to the secondary pivot arm 1503; This directly causes a pivoting or rotational movement of the receptacle 1506 located on the secondary arm 1503. This configuration allows each of the substrate centering pins to be manipulated to rotate simultaneously and allows the operation / rotation to be the same between the three substrate centering pins. Further, each of the receptacles 1506 may be manipulated vertically, for example, by vertical movement of the entire centering mechanism 1500 or by vertical sliding movement of the receptacle 1506 within the frame 1505.

  [0088] The actuator 1501 is generally an actuator configured to rotate the substrate centering post 1304 to engage the substrate and center the substrate between the posts without exerting excessive pressure on the substrate. For example, each post 1304 includes a centering pin that serves to engage the substrate and slide the substrate to a central position, as described in detail below. As the substrate is slidably positioned in the center position, the centering pins continue to mechanically engage the substrate to maintain the substrate in the center position. However, in the conventional centering mechanism, the strength and configuration of the actuator is such that when the substrate is centered, the substrate is bent as a result of the force being applied around the substrate by the centering post. Further, when the substrate is bent, even if the actuator is released, the substrate is shifted from the center due to insufficient biasing force on the substrate by the actuator. Therefore, in order to address this problem, the present inventor replaced the conventional actuator 1501 with a friction-free actuator. The frictionless actuator 1501 works in the same way as a conventional actuator during the centering process, but when the substrate is centered, the frictionless actuator overcomes the bending and misalignment problems associated with the conventional actuator. For example, when the substrate is centered, a frictionless actuator can be released without substantial movement of the actuator, i.e., a substantial change in drive pressure. Further, the frictionless actuator can center the substrate without pressing the substrate to the bending point. For example, Airport Corporation of Norway, CT manufacturer instrument quality pneumatic actuators, and Airpel anti-stiction air cylinders can be effectively used as the actuator 1501. These devices are generally manufactured using a combination of graphite pistons and borosilicate glass cylinders, where each piston is selectively matched to fit the cylinder with very close tolerances. This configuration provides low friction between the cylinder and the piston, so the actuator responds to forces of only a few grams and operating pressures less than 0.2 psi. In addition, the friction at start and during operation is approximately equal, which prevents non-uniform or uncontrolled start and provides uniform smoothness over the entire stroke of the device. Thus, using a frictionless actuator, when the substrate is centered, the frictionless actuator can be released without encountering reverse movement or slipping of the substrate. Apart from non-friction actuators, motors, voice coils, electroceramics, etc. are also included.

  [0089] FIG. 16 is a cross-sectional view illustrating a substrate centering member or post 1304 of the present invention. The centering post 1304 is generally elongated, ie cylindrical, and is configured to be received by the receptacle 1506 of the substrate centering mechanism 1500. The post 1304 generally includes a core 1604, and the core 1604 has a cap member 1601 that covers an upper portion thereof. The core 1604 is typically manufactured from a robust material such as, for example, ceramic. Cap member 1601 includes a raised central portion 1602 that ends at a peak or center point. The peak or tip of the central portion 1602 is positioned to coincide with the longitudinal axis of the post 1304 so that when the post 1304 is rotated, the tip or peak of the central portion 1602 remains in one place. The cap member 1601 is generally manufactured from a robust material that has good exposure characteristics to the electrochemical plating solution. One material from which the cap member 1601 can be manufactured is, for example, PEEK. The cap member 1601 also includes a substrate centering post 1603 extending upward from the upper surface of the cap 1604. The substrate centering post 1603 is located radially outward from the peak of the central portion 1602 or the cap 1601. In this way, as the substrate centering member 1304 is rotated, the substrate centering post 1603 pivots or rotates about the longitudinal axis of the core 1604 so that the post 1603 rotates or pivots about the central portion 1602. Move. The substrate centering member 1304 also includes a sleeve member 1605 positioned radially outward of the core 1604. The sleeve 1605 co-engages with the cap 1604 and the core 1604 to form a fluid seal, where processing fluid travels through a bore that includes the core member 1604 and is positioned beneath the substrate centering mechanism. Prevent damage to 1500.

  [0090] FIG. 17 is a top view illustrating the substrate centering member 1304 of the present invention, and more specifically, FIG. 17 is a top view of the cap member 1601 shown in FIG. FIG. 17 shows the positional relationship between the central portion 1602 or the peak of the central portion 1602 and the substrate centering pin 1603. Further, when the centering member 1394 is rotated about its central axis by the centering mechanism 1500, i.e., about the axis extending through the point 1602, the substrate centering pin 1603 is in the direction indicated by the arrow A. Moved. This movement, described in detail below, can be used to push the substrate located on member 1304 to the center or center position.

  [0091] During operation, the bevel cleaning cell of the present invention can be used to rinse and clean the substrate. This cleaning operation may be performed on both the manufacturing surface and the non-manufacturing surface of the substrate, or may be performed individually on each surface. The cleaning cell of the present invention also cleans excess material from the beveled portion of the substrate, i.e., the portion of the seed layer that is also partially deposited on the bevel and backside around the substrate manufacturing surface. Can be used. This process is often referred to as bevel cleaning or edge bead removal in semiconductor technology.

  [0092] As noted above, the substrate processing system 100 generally includes a plating cell located at locations 102, 104, 110 and 112, a spin rinse drying and cleaning cell stacked at locations 114 and 116, and a location 106 and And a bevel cleaning cell located at 108. A robot operates to transfer a substrate between each processing cell. In general, the substrate to be transferred to the bevel cleaning cell locations 106 and 108 is transferred from one of the plating cell locations 102, 104, 110 and 112 there. This is because bevel cleaning cells are generally configured to remove material deposited on the double portion of the substrate and the backside of the substrate before the substrate is transported out of the system 100.

  [0093] The process of positioning a substrate in the bevel cleaning cell 1300 of the present invention generally includes insertion, centering and chucking. The insertion process is performed by a substrate transfer robot and includes bringing the substrate into a bevel cleaning cell 1300 and lowering the substrate to centering pins 1304. As the substrate is lowered to centering pins 1304, the substrate is supported by the center peak or top 1602 of each centering pin 1304. When the substrate is positioned on each centering pin 1304, the robot is retracted from the bevel cleaning cell 1300.

  [0094] Once the substrate is inserted into the bevel cleaning cell 1300, a centering process is performed. Centering the substrate in the bevel cleaning cell 1300 is important for the bevel cleaning process because the tolerance for removing edge bead material from the substrate is typically less than about 1 mm. For example, when copper is electrochemically deposited on a semiconductor substrate, generally the outer periphery 3-5 mm of the substrate is not considered to be part of the production surface, i.e., this outer periphery or band commonly referred to as the exclusion zone Devices are generally not formed. This exclusion zone includes the exposed portion of the seed layer where electrical contacts are typically located during the plating process. The seed layer deposited in the exclusion zone generally extends to the bevel of the substrate, and sometimes extends to the back side of the substrate, i.e. not the production surface. Subsequent semiconductor processing steps generally involve contact with either the double portion of the substrate or the back surface of the substrate, so that the double portion and back surface of the substrate are removed or cleaned to allow subsequent contact with these areas. It is desirable to reduce the risk of producing contaminating particles. The removal of material from the substrate exclusion zone, bevel and backside is commonly referred to as a bevel cleaning process, which dispenses an etchant solution at the interface between the substrate manufacturing surface and the exclusion zone while the substrate is being removed. Also includes dispensing the cleaning solution on the back side. Therefore, the etchant solution dispensed on the front side of the substrate is dispensed at the interface between the production surface and the exclusion zone so that the etchant is not dispensed to the production surface and does not damage the device. It is important to center properly.

  [0095] The centering process begins by actuating a frictionless actuator 1501 that gently rotates each of the receptacles 1506. The substrate centering post 1304 received in the receptacle 1506 is co-rotated, and therefore the substrate centering pin 1603 located on the cap member 1601 is rotated inward to co-engage with the edge of the substrate. The substrate is centered between the posts 1304 by the cooperative rotational movement of the pins 1603. Once the substrate is centered between each post 1304, the post 1304 can maintain a gentle tension on the substrate by applying pressure to the frictionless actuator 1501 in succession. However, this tension is calculated as a force sufficient to maintain the substrate in the center position while being insufficient to cause bending or flexing on the substrate surface.

  [0096] Once the substrate is centered, it can then be chucked to the substrate support member 1303. This chucking process generally involves raising the chuck 1303 to engage the lower surface of the substrate secured to the centering post 1304, or lowering the centering post 1304 to position the substrate on the chuck 1303, or the chuck 1303 Including a combination of ascent and descent of post 1304. The chuck 1303 may be a vacuum chuck, and therefore, when the substrate and the chuck 1303 are in physical contact with each other, a reduced pressure can be generated on the surface of the chuck 1303 to fix the substrate thereto. When the substrate is fixed to the chuck 1303, the pins 1304 can be lowered, or the chuck 1303 can be raised, and the substrate can be supported only by the chuck 1303.

  [0097] Fluid processing can begin with the substrate chucked and secured. Fluid processing generally involves pivoting the rinse solution arm 1305 to a position approximately above the center of the substrate. The rinse solution can then be dispensed therefrom while the substrate is rotated on the chuck 1303. This rotation, for example, pushes a rinse solution, which may be DI water, radially outward toward the periphery of the substrate. The rinsing solution flows through the bevel edge of the substrate, falls to the discharge basin 1302, and can be collected by a discharge section (not shown). A chemical dispensing arm 1306 can also be positioned over the substrate, and more particularly, the chemical dispensing arm 1306 dispenses an etchant solution therefrom to the interface between the substrate fabrication surface and the exclusion zone. It can be particularly positioned as possible. The process of dispensing the etchant solution at this interface generally includes ending the rinse solution dispense from arm 1305 and then initiating the dispense of etchant solution from arm 1306. This method allows the rinse solution previously dispensed to the production surface to maintain a barrier or shield layer on the production surface that can serve to dilute the etchant that can bounce back to the production surface. Further, terminating the rinse solution dispensing process before dispensing the etchant also serves to prevent undesired dilution of the etchant solution.

  [0098] Similarly, a backside fluid dispensing nozzle 1400 can be used to dispense a rinsing solution and an etchant solution to the backside of the substrate. The backside fluid dispensing nozzle or manifold 1400 generally includes a plurality of nozzles that allow the backside fluid dispensing nozzle 1400 to dispense both rinse and etch solutions. Accordingly, the back nozzle 1400 can be used simultaneously to rinse and clean the back of the substrate while the cleaning and rinsing process is performed on the front of the substrate.

  [0099] The bevel cleaning process illustrated herein may include first pre-rinsing both the front and back surfaces of the substrate. The pre-rinse process may include dispensing DI on the front side of the substrate at a flow rate of about 1 L / min to about 2 L / min and dispensing DI on the back side of the substrate at a flow rate of about 50 cc / min to 100 cc / min. Good. During this process, the substrate may be rotated at about 150 rpm to about 250 rpm, and the duration of the fluid dispensing process may be about 8 seconds to about 20 seconds. Generally, the pre-rinse process is configured to rinse off residual electrolyte that may adhere to the substrate surface as a result of previous electrochemical plating processes. When the substrate is pre-rinsed, the rotational speed can be increased from about 2000 rpm to about 3500 rpm for about 5 seconds to remove DI that has accumulated near the edge of the substrate. Thereafter, while the substrate is still rotating at about 2000 rpm to about 3500 rpm, for example, an arm 1306 may apply an etchant solution to the interface between the production surface and the exclusion zone. The etchant solution may be delivered to the interface at a flow rate of, for example, about 20 cc / min to about 40 cc / min, and the duration may be about 10 seconds to about 25 seconds. The flow of the etchant solution generally passes through a relatively narrow nozzle having an aperture with an inner diameter of, for example, 0.25 to 0.5 inches. The rotation speed is maintained at a high speed in order to minimize the stain on the production surface due to the etchant solution splashing back into the production surface. In general, the nozzle that dispenses the etchant solution onto the substrate is located about 1 mm to about 3 mm from the substrate surface to allow accurate dispensing of the etchant solution to the interface. In addition, the nozzles are generally angled from about 30 ° to about 50 °, i.e., toward the periphery of the substrate, to minimize bounce back to the production surface.

[00100] The chemical composition of the etchant solution is generally based on H ₂ SO ₄ , and therefore, when the concentration of H ₂ SO ₄ is sufficient, the etch rate at a fixed H ₂ O ₂ concentration. Does not change. Similarly, when the H ₂ SO ₄ concentration is insufficient, the etching increases non-linearly with H ₂ SO ₄ . Further, when the H ₂ SO ₄ concentration is sufficient, the etching varies linearly with the H ₂ O ₂ concentration, and when the H ₂ SO ₄ concentration is insufficient, the etching rate is the diffusion limited oxidation. For flattening. Thus, the ratio of the components of the etching solution is, for example, about 15 to 25 parts H ₂ SO ₄ , about 350 to 450 parts H ₂ O ₂ , and more than 1400 parts H ₂ O, or about 20 parts H ₂ SO ₄ , 400 parts H ₂ O ₂ and 1580 parts H ₂ O. These concentrations indicate that increasing the acid concentration increases the etching rate, but the peroxide concentration has a minimal effect on the etching rate when it is increased. Furthermore, when the H ₂ O ₂ concentration is less than 6%, copper oxidation is shown to be slow, so at these concentrations, the etch rate is generally not affected by the H ₂ SO ₄ concentration. However, when the H ₂ O ₂ concentration exceeds 6%, the oxidation of copper increases, so the etching rate of high concentration H ₂ SO ₄ increases with the H ₂ O ₂ concentration.

  [00101] Once the time of the etchant solution dispensing process is complete, the rinse solution is again dispensed on the production surface at a flow rate of about 1 L / min to about 2.5 L / min for about 3 seconds to about 10 seconds. However, the rotational speed may be reduced to about 100 rpm to about 300 rpm. The step of dispensing the rinsing solution onto the production surface of the substrate can serve two purposes. First, the rinse solution dispensed after the etchant solution serves to dilute the boiled etchant solution and rinse it off the production surface. Second, the rinse solution also forms a secondary protective layer to protect against etch solutions that can bounce off from subsequent backside chemical dispensing steps. When the dispensing process for the front rinse solution is complete, the back chemical nozzle is activated to dispense the etchant solution onto the back of the substrate at a flow rate of about 30 cc / min to about 70 cc / min for about 4 seconds to about 10 seconds. However, the rotation speed of the substrate is maintained at about 150 rpm to about 250 rpm. More particularly, the etchant flow rate may be between about 35 cc / min and 45 cc / min. Although high flow rates have been shown to result in improved edge profiles and bevel cleaning, these effects are suppressed by increasing edge stains. Once the backside chemical dispensing step is complete, another front rinse step may be performed to rinse off the bounced etchant from the front surface. The front rinse process may again include dispensing the DI at the previous flow rate and rotational speed for a period of about 2 seconds to about 6 seconds. When the final rinse process is complete, turn off all fluid dispensing nozzles and increase the rotational speed of the substrate from about 400 rpm to about 4000 rpm, typically from about 2000 rpm to 3000 rpm to partially Or completely dry.

  [00102] FIG. 18 is a schematic diagram illustrating one embodiment of a plating solution delivery system 1811. As shown in FIG. The plating solution delivery system 1811 is generally configured to supply the plating solution to each processing location on the system 100 that requires the plating solution. More specifically, the plating solution delivery system is further configured to supply a different plating solution or chemical to each processing location. For example, the delivery system may supply a first plating solution or chemical to the processing locations 110, 112 while supplying a different plating solution or chemical to the processing locations 102, 104. In general, individual plating solutions are separated for use in a single plating cell, and therefore do not present the problem of cross contamination with different chemicals. However, embodiments of the present invention contemplate that two or more cells may share a common chemical that is different from another chemical supplied to another plating cell on the system. These features are effective because the ability to supply multiple chemicals to a single processing platform allows multiple chemical plating processes on a single platform.

  [00103] In another embodiment of the present invention, a first plating solution and a separate and distinct second plating solution may be sequentially supplied to a single plating cell. Normally, supplying two separate chemicals to a single plating cell requires that the plating cell be evacuated and / or purged between each chemical, but the first and second plating solutions If the mixing ratio is less than about 10%, it is not harmful to the film properties.

  [00104] The plating solution delivery system 1811 typically includes a plurality of additive sources 1802 and at least one electrolyte source 1804, which are fluidly coupled to each processing cell of the system 100 via a manifold 1832. The additive source 1802 typically includes an accelerator source 1806, a leveler source 1808, and an inhibitor source 1810. The accelerator source 1806 is adapted to supply an accelerator material that normally adsorbs to the substrate surface and locally accelerates the current at a given voltage at the adsorbed location. The accelerator includes, for example, a sulfide-based molecule. The leveling agent source 1808 is adapted to provide a leveling agent material that serves to promote flat plating. The leveling agent is, for example, a nitrogen-containing long chain polymer. Inhibitor source 1810 is adapted to provide an inhibitor material that tends to reduce current where it adsorbs (usually the upper edge / corner of the high aspect ratio feature). Therefore, the inhibitor slows the plating process at these locations, thereby reducing the premature closing of the feature before it is completely filled and minimizing the formation of harmful voids. To. Inhibitors include, for example, polymers of polyethylene glycol, mixtures of ethylene oxide and propylene oxide, or copolymers of ethylene oxide and propylene oxide.

  [00105] Each of the additive sources 1802 is generally coupled to a small buffer container 1816 to prevent exhaustion of the additive source and to minimize waste of the additive during bulk container replacement. That is, it has a large storage container. The buffer container 1816 is typically filled from the mass storage container 1814, and thus the mass container can be removed for replacement without affecting the operation of the fluid delivery system. This is because the associated buffer container can supply certain additives to the system during bulk container replacement. The volume of the buffer container 1816 is typically significantly smaller than the volume of the bulk container 1814. This is sized to contain enough additives to operate for 10-12 hours without interruption. This provides sufficient time for the operator to change the bulk container when the bulk container is empty. If a buffer container is not present but non-interrupting operation is desired, the bulk container must be replaced before it is emptied, thus leading to significant waste of additives.

  [00106] In the embodiment shown in FIG. 18, a dose pump 1812 is coupled between the plurality of additive sources 1802 and the plurality of processing cells. The dose pump 1812 generally includes at least first to fourth inlet ports 1822, 1824, 1826, 1828. For example, the second inlet port 1822 is generally coupled to the accelerator source 1806, the second inlet port 1824 is generally coupled to the leveler source 1808, and the third inlet port 1826 is generally inhibited. Coupled to agent source 1810, fourth inlet port 1828 is generally coupled to electrolyte source 1804. The output 1830 of the dose pump 1812 is typically coupled to the processing cell via the output line 1840 via the manifold 1832 and supplied sequentially (ie, at least one or more accelerators, levelers and / or inhibitors). Can be combined with the electrolyte supplied from the electrolyte source 1804 via the first supply line 1850 to the manifold 1832 to form a first or second plating solution as required. The dose pump 1812 may be a metering device (s) adapted to supply a measured amount of selective additive to the processing cells 102, 104. The dose pump 1812 can be a rotary metering valve, solenoid metering pump, diaphragm pump, syringe, peristaltic pump, or other positive displacement pump used alone or coupled to a flow sensor. Further, the additive may be pressurized and coupled to a flow sensor, coupled to a liquid mass flow controller, or a pressurized dispensing container that is acceptable for flowing an electrochemical plating solution through a plating cell. Or it may be metered by weight-based load cell measurements of other fluid metering devices. In one embodiment, the dose pump includes rotating and reciprocating ceramic pistons that propel 0.32 ml of predetermined additive per cycle.

  [00107] In another embodiment of the present invention, the fluid delivery system can be configured to provide a second, completely different plating solution and associated additives. For example, in this embodiment, a different base electrolyte solution (similar to the solution contained in container 1804) is implemented, for example, to give processing system 100 the ability to use plating solutions from two separate manufacturers. can do. In addition, an additional set of additive containers can be implemented to accommodate the second base plating solution. Therefore, this embodiment of the present invention provides a first chemical (a chemical supplied by a first manufacturer) to one or more plating cells of the system 100 while a second chemical (second 2 chemicals supplied by two manufacturers) to one or more plating cells of the system 100. Each chemical generally has its own associated additive, but the mating dose of the chemical from one or more additive sources is not beyond the scope of the present invention.

  [00108] To implement a fluid delivery system that can supply two separate chemicals from separate base electrolytes, a replica of the fluid delivery system shown in FIG. 18 is connected to the processing system. More specifically, the fluid delivery system shown in FIG. 18 generally includes a second set of additive containers 1802, a second pump assembly 1830, and a second manifold 1832 (a shared manifold is also contemplated). Changed to In addition, a separate source 1804 for the virgin formulation / basic electrolyte is also provided. The additional hardware is set up in the same configuration as the hardware shown in FIG. 18, but the second fluid delivery system is generally parallel to the illustrated or first fluid delivery system. Thus, in the configuration implemented herein, each basic chemical with a combination of usable additives can be supplied to one or more processing cells of the system 100.

  [00109] The manifold 1832 is typically configured to interface with the valve train 1834. Each valve in the valve train 1834 can be selectively opened and closed to direct fluid from the manifold 1832 to one of the processing cells of the plating system 100. Manifold 1832 and valve train 1834 may optionally be configured to support selective fluid delivery to an additional number of processing cells. In the embodiment shown in FIG. 18, the manifold 1832 and valve train 1834 include a sample port 1836 that allows the chemicals or components thereof used in the system 100 to be sampled in different combinations without interrupting processing. Yes.

  [00110] In some embodiments, a dose pump 1812, output line 1840 and / or manifold 1832 may be purged. To facilitate such purging, the plating solution delivery system 1811 is configured to supply at least one of a cleaning and / or purge fluid. In the embodiment shown in FIG. 18, the plating solution delivery system 1811 includes a deionized water source 1842 and a non-reacting gas source 1844 coupled to a first delivery line 1850. The non-reactive gas source 1844 can supply a non-reactive gas, such as inert gas, air, or nitrogen, via the first delivery line 1850 to flush the manifold 1832. In addition to or in lieu of non-reacting gas, deionized water can be supplied from deionized water source 1842 to flush manifold 1832. Further, the electrolytic solution from the electrolytic solution source 1804 may be used as a purge medium.

  [00111] A second delivery line 1852 is provided between the first gas delivery line 1850 and the dose pump 1812. Purge fluid containing at least one of electrolyte, deionized water, or non-reactive gas from each source 1804, 1842, 1844 is passed from the first delivery line 1850 to the second gas delivery line 1852 to the dose pump 1812. Can commutate. This purge fluid is propelled through dose pump 1812 and delivered from output line 1840 to manifold 1832. Valve train 1834 typically directs purge fluid from exhaust port 1838 to recycling system 1832. Various other valves, regulators, and other flow control devices are not illustrated and / or illustrated for clarity.

  [00112] In one embodiment of the present invention, a first chemical may be supplied to the manifold 1832, which facilitates copper feature filling on the semiconductor substrate. The first chemical is about 180 to about 65 g / l copper, about 55 to about 85 ppm chlorine, about 20 to about 40 g / l acid, about 4 to about 7.5 ml / L accelerator, about 1 Contains up to 5 ml / L of inhibitor but no leveling agent. This first chemical is delivered from the manifold 1832 to the first plating cell 102 so that the features disposed on the substrate can be substantially filled with metal. Since the first chemical generally does not completely fill the feature and the deposition rate is inherently slow, the first chemical is optimal for improving the gap fill performance and defect ratio of the deposited layer. can do. A second chemical formulation with a different chemical than the first chemical can be fed via manifold 1832 to another plating cell of system 100, where the second chemical is on the substrate. Configured to promote flat bulk deposition of copper in The second chemical is, for example, about 185 to about 60 g / l copper, about 60 to about 80 ppm chlorine, about 20 to about 40 g / l acid, about 4 to about 7.5 ml / L accelerator, It may contain about 1 to about 4 ml / L of inhibitor and about 6 to about 10 ml / L of leveling agent. The second chemistry is removed from the manifold 1832 so that an efficient bulk metal deposition process can be performed on the metal deposited during the feature fill and planarization deposition steps to fill the remainder of the feature. Delivered to the second processing cell. Because the second chemical generally fills the top of the feature, the second chemical can improve the planarization of the deposited material without substantially affecting the substrate throughput. Can be optimal. Thus, the two-step, different chemical deposition process allows for both rapid deposition and good planarization of the deposited film.

  [00113] The plating solution delivery system 1811 is in communication with a plurality of fluid conduits that connect the fluid delivery system 1811 to a fluid storage tank located in the board plating system 100. More particularly, fluid dispense manifold 1832 is generally in communication with a plurality of conduits 1901, 1902, 1903, as shown in FIG. Each of these conduits 1901, 1902, 1903 is connected to a particular fluid storage tank 1904-1911 which will be described in detail below. Accordingly, the fluid delivery system 1811 can be controlled to mix and supply a particular catholyte or anolyte solution to one of the tanks 1904-1911. A specific anolyte / catholyte solution is supplied to the manifold 1832 which selectively opens an operable valve to allow the specific solution to flow into one of the conduits 1901, 1902, 1903. . For example, assuming that the conduit 1901 is configured to supply a particular catholyte to a particular plating cell on the platform 100, the catholyte supplied to the conduit 1901 will be sent by the conduit to that particular plating cell. To a particular plating cell holding tank, such as a tank 1904 configured to supply catholyte. The catholyte solution is delivered to tank 1904 and the valve located in conduit 1901 is then closed, terminating the flow of solution to tank 1904. Tank 1904 can then be used to supply catholyte to a specific plating cell on platform 100 for the electrochemical plating process. The solution remaining in the conduit 1901 can be purged or drained from the conduit before supplying another solution to one or more cells via a particular conduit to minimize mating contamination problems.

  [00114] Each of the tanks shown in FIG. 19, ie tanks 1904-1911, are generally arranged in pairs. More specifically, tanks 1904 and 1905 operate as a pair, while tanks 1906 and 1907, tanks 1908 and 1909, and tanks 1910 and 1911 also operate as a tank pair. The tank pair generally includes a first tank configured to contain a first solution and a second tank configured to contain a second solution different from the first solution. In the plating system illustrated in FIG. 1, the plating location 112 can be provided with a plating cell, such as the plating cell 200 shown in FIG. 2, so that the first tank 1900 supplies the cathode solution to the cell 200. While configured, the second tank 1905 can be configured to provide the anode solution to the plating cell 200. As described above, the catholyte solution can be prepared by the fluid delivery system 1811 and delivered to the tank 1904 via the conduit 1901. Similarly, the anolyte solution can be prepared by the fluid delivery system 1811 and delivered to the tank 1905 via the conduit 1903.

  [00115] Similar to the configuration of tanks 1904 and 1905, tanks 1906 and 1907 can be configured to supply a plating solution to a plating cell located at processing location 110 on platform 100. Further, tanks 1910 and 1911 and tanks 1908 and 1909 can be used to supply plating solution to plating cells located at processing locations 104 and 102, respectively. Each of the tank pairs 1906-1911 can be configured to supply both catholyte and anolyte solutions to their respective plating cells. Alternatively, these tanks may be configured to supply only the catholyte solution to their associated plating cells, i.e., they supply a single plating solution to one or more cells on the processing platform 100. May be combined into a single tank configured to.

  [00116] FIG. 20 is a perspective view illustrating the tank 2000 with the two walls of the tank removed to allow the internal components of the tank 2000 to be seen. Tank 2000 generally includes an enclosed space having upstanding sidewalls 2001 that define an interior volume configured to contain a fluid solution. A fluid return assembly 2002 extends down to the tank and ends near the bottom of the tank 2000. The internal volume of tank 2000 also includes a plurality of intersecting walls 2008 configured to baffle the flow of fluid to the internal volume of tank 2000. The lower portion of the tank 2000 includes a heat exchanger 2006 that generally operates to provide temperature control to the processing fluid contained in the tank 2000. A pump head assembly 2004 extends into the internal volume of tank 2000 and ends near the bottom of tank 2000 and is generally configured to draw fluid from the internal volume of tank 2000 for use in processing steps.

  [00117] FIG. 21 is a plan view illustrating a fluid tank of the present invention. As shown in FIG. 20, the fluid tank 2000 includes a plurality of upright fluid commutation walls 2008 positioned in the internal volume thereof. The positions of these commutation walls 2008 generally serve to form a plurality of fluid compartments 2101, 2102, 2103, 2104 and 2108. Each of these fluid compartments communicates with adjacent fluid compartments via a fluid pass-through 2113, as shown in FIG. Further, in addition to the inner wall 2008, the selected compartment may be positioned with angled fluid commutation walls 2105, 2106 and 2107, as shown in FIG. More particularly, the fluid tank can include an inclined or angled fluid receiving wall 2300. This angled or inclined wall 2300 may be an outer wall or an inner wall. In any event, this slanted wall is configured to minimize the formation of bubbles in the solution contained in the tank by minimizing bubbles generated by pouring the liquid solution vertically into the tank. In this embodiment, the fluid delivered to the tank is dispensed by the fluid return line 2002 to the angled wall 2300 and the fluid flows to the wall 2300 at location 2301 and then along the surface of the wall 2300. In the direction indicated by the arrow “A”, the liquid is allowed to flow downward into the solution stored in the tank. The solution flow down the sloped or sloping wall into the solution minimizes bubbles formed at the interface between the solution in the tank and the solution returned to the tank.

  [00118] Thus, during operation, fluid is generally returned to tank 2000 via fluid supply line 2110 ending in first fluid compartment 2101 (optionally, the fluid supply line is , May end with an angled wall). The fluid supplied to the compartment 2101 proceeds to the second fluid compartment 2102 via the first fluid pass-through 2111. As fluid enters the second fluid compartment 2102, the fluid is directed to the angled fluid commutation wall 2105. The fluid travels around the angled fluid commutation wall 2105 and then travels through the second fluid pass-through 2112 to the second fluid compartment 2108. Similar to the first fluid compartment, the fluid is closed with an angled wall and goes through another fluid pass-through to the third fluid compartment 2103 where the same process is repeated and eventually the fluid becomes final. Through a typical fluid pass-through 2114 to the final fluid compartment 2104. Each angled individual wall, as described further below, is configured to interact with the fluid flow to minimize bubbles in the tank. In addition, the location of pass-throughs 2111-2114 also serves to minimize bubbles in the tank. This is because the buoyancy of the bubbles generally prevents the bubbles from traveling through a pass-through located at the bottom of each wall. The pump head 2000 generally ends in the final fluid compartment 2104, and therefore fluid is pumped from the tank 2000 from the final compartment 2104 through the pump head 2004.

  [00119] As described above, the position of the plurality of upstanding walls 2008 and the angled fluid commutation walls 2105, 2106, 2107 serves to minimize bubbles in the fluid solution pumped from the tank 2000. . More particularly, the configuration of the tank 2000 is such that the fluid delivered to the tank 2000 hits the multiple walls, goes around the multiple walls, and then flows through the multiple fluid pass-throughs before the pump head from the tank 2000. Designed to require pumping through 2004. In operation, when fluid is flowed against the fixed surface, bubbles in the solution tend to adhere to the fixed surface, thus removing the bubbles from the flowing liquid. Similarly, it is shown that when a fluid passes through a plurality of fluid feedthroughs 2101, bubbles suspended in the fluid solution are removed therefrom. Accordingly, the tank configuration of the present invention is configured to minimize bubbles in the fluid solution pumped from tank 2000. This is particularly important for electrochemical plating systems since air bubbles in the fluid solution or electrolyte supplied to the plating cell have been shown to cause substantial defects in the plated substrate.

  [00120] In another embodiment of the present invention, the tank 2000 is modified to further minimize bubble formation resulting from the fluid delivered to the tank 2000. More particularly, conventional fluid storage tanks for electrochemical plating systems generally deliver fluid to the storage tank via an aperture located at the top of the tank. Thus, the fluid delivered to the tank falls by gravity and is essentially poured into the solution in the tank. This pouring action has been shown to generate bubbles in the plating solution. Therefore, embodiments of the present invention provide an improved method for delivering fluid to an accumulation tank of an electrochemical plating system with minimal bubble formation. This method generally involves positioning an angled wall within the first compartment 2101 of the tank 2000, as generally described above and shown in FIG. The angled wall can be attached to one of the upstanding walls surrounding the container 2101 and the fluid delivered to the tank 2000 is dispensed directly onto the angled wall. The fluid flows down on the angled wall down to the fluid at the bottom of the tank. In this configuration, the fluid does not fall, pour or bounce into the tank, but rather the fluid is dispensed onto the angled walls, minimizing bubble formation in the bulk solution, while in sheet form. It is made to flow uniformly into a large amount of solution by the action.

  [00121] Also, each tank of the present invention is configured to increase the aspect ratio, that is, the ratio of tank height to tank side or cross-sectional area. Accordingly, the tank generally has a small cross-sectional area, ie, length and width, and a large height dimension. This gives an optimum pump head depth even when a small amount of solution is used. For example, an embodiment of the present invention uses a tank that is about 9 inches wide, about 7.75 inches long, about 19 inches high, and has an internal volume of about 17 liters. Therefore, the aspect ratio is greater than 1: 1 (19: (9 + 7.75)). Another feature of the present invention that maximizes the pump head depth is the position of the heat exchanger at the bottom of the tank. This displaces the substantial volume in the lower part of the tank and therefore increases the pump head depth.

  [00122] In operation, an embodiment of the present invention is generally a piping system for a plating system so as to supply a plurality of chemicals to a plurality of plating cells located in an integral electrochemical plating platform. Provide a structured piping system. More specifically, the piping system of the present invention supplies, for example, a first plating solution to a first plating cell on an electrochemical plating platform, while supplying a second chemical different from the first chemical to the electrochemical Configured to feed a second plating cell on a typical plating platform. The piping system of the present invention can be expanded to supply, for example, four different plating chemistries to four different plating cells located on an integral system platform. Further, in plating systems that use plating cells configured to use both anolyte and catholyte, such as the plating cell 200 shown in FIG. 2, the piping system of the present invention is generally located on a processing platform. A separate cathode solution is supplied to each plating cell, while an anode solution is configured to be supplied to each plating cell located on the processing platform. As with the previous embodiment, the catholyte solutions can all be different, and the anolyte solutions can also be different from one another.

  [00123] When operating an electrochemical plating platform, such as the platform 100 shown in FIG. 1, the delivery system 1811 is operable to form a catholyte solution for plating cells located at the processing locations 112 and 110. The catholyte solution may include appropriate amounts of acids, halides, sustained electrolytes, additives, and / or other components commonly used in electrochemical plating solutions. This solution can be mixed in fluid delivery system 1811, pumped through manifold 1832, and further fed into conduit 1901 for delivery to tanks 1904 and 1906. In this configuration, tanks 1904 and 1906 are in fluid communication with the catholyte chamber of plating cell 200 located at processing locations 110 and 112. Since the plating cell 200 is a type of plating cell that requires both catholyte and anolyte, the fluid delivery system 1811 can also operate to form an anolyte for use in the cell. The anolyte can be formed in fluid delivery system 1811 and sent to manifold 1832 and further delivered to tanks 1905 and 1907 via fluid conduit 1903. These tanks 1905 and 1907 are generally in fluid communication with the anode or anolyte compartment of the plating cell 200 located at the processing locations 110 and 112.

  [00124] The particular combination of anolyte and catholyte supplied to tanks 1904-1907 can be configured to optimize the bottom-up fill characteristics for the semiconductor substrate. More specifically, for example, the concentration of additives such as leveling agents, inhibitors, and accelerators in the catholyte solution supplied to tanks 1904 and 1906 is approximately plated to the high aspect ratio features of the semiconductor substrate. It can be configured to facilitate the initial plating step such that there is no. The process of initiating feature filling in the semiconductor substrate is important for the entire plating process. This is because it is generally difficult to fill high aspect ratio features by bottom-up without obtaining feature closure or generating voids in the plating material. Therefore, the piping system of the present invention allows a feature filling process to be performed at a particular processing location with a particular chemical designed to facilitate bottom-up filling.

  [00125] Similarly, once the bottom-up or feature filling process is completed, the substrate is generally passed through a secondary plating process that bulk fills or overfills the features. Bulk fill processes are generally performed at a higher plating rate than feature fill processes and therefore generally use higher current densities. Thus, the chemicals used to facilitate feature filling may not be optimal as to facilitate the bulk filling process. Therefore, the piping system of the present invention allows both feature and bulk filling processes to be performed on the same platform, even if different chemicals are required to optimize each process. Provides additional chemical capabilities. More particularly, the processing locations 102 and 104 may be located with a plating cell 200 configured to facilitate the pulp fill plating process. The plating cell used for feature filling may be essentially the same as the plating cell used for bulk filling, but the chemicals supplied to each cell are generally different. Accordingly, the piping system of the present invention can be configured to supply individual catholyte and / or anolyte to tanks 1918-1911, which typically supply each of these solutions to process locations 102, 104. Configured as follows. In particular, the fluid delivery system 1811 is activated and can be made to form a cathodic solution configured to facilitate the pulp fill plating process. The catholyte solution is delivered to the manifold 1832, which can supply the catholyte solution to the fluid conduit 1902. Fluid conduit 1902 can deliver bulk-filled catholyte solution to tanks 1909 and 1911. Similarly, the fluid delivery system 1811 can also be used to form an anolyte solution for a bulk fill process, which can be delivered via a conduit 1903 to tanks 1908 and 1910.

  [00126] Once the plating solution is delivered to each tank, the substrate can be introduced into the processing platform 100 and located at one of the processing locations 110 or 112. The features formed on the substrate can be filled with a feature fill plating process performed at the processing location 110 or 112. The substrate can then be transferred to the processing location 102 or 104 for the bulk filling process. The processes performed at the processing locations 110, 112 may use separate or different chemicals than the processes performed at the cell locations 102, 104. Further, the chemical solution used at either one of the processing locations, i.e., processing location 112, may be different from the other processing locations, i.e., processing location 110. This is because the fluid delivery system 1811 and piping system of the present invention allows each individual plating cell on the processing platform 100 to be supplied with a separate chemical.

  [00127] In another embodiment of the present invention, a degasser can be positioned in one of the fluid conduits of the present invention to remove bubbles from the fluid flowing through the conduit. The degassing device is located, for example, in one of the conduits connecting the tank to the plating cell and can operate to remove bubbles from the fluid (plating solution) supplied to the plating cell. In addition, because the plating system of the present invention requires multiple pumps to generate fluid flow, the filter can be located in one or more fluid conduits. These filters can be configured to remove particles generated by the mechanical parts of the pump from the fluid stream before the fluid reaches the plating cell.

  [00128] In order to minimize defects in the plated film, bubbles that adhere to the substrate surface during the process of immersing the substrate in a plating solution contained in a plating cell must be minimized. Therefore, embodiments of the present invention provide a method of immersing a substrate in a processing fluid that generates minimal bubbles. The dipping method of the present invention begins with the process of loading a substrate into a head assembly that is configured to support and electrically contact the substrate. The head assembly generally includes a contact ring and a thrust plate assembly separated by a load space. A detailed description of the contact ring and thrust plate assembly can be found in commonly assigned US patent application filed Oct. 22, 2002 under the name “Plating Uniformity Control By Contact Ring Shaping,” which is incorporated herein by reference in its entirety. 10 / 278,527. A robot is used to position the substrate on the contact ring through the access space. More specifically, the robot may be a vacuum type robot configured to engage the back surface of the substrate with a decompression engagement device. The substrate is then supported face down (manufacturing surface down) and the vacuum engagement device can be attached to the back or non-manufacturing surface of the substrate. The robot is then extended through the access space to the contact ring, lowered to position the substrate on the contact pin / substrate support surface of the contact ring, disengaged the vacuum engagement device, raised to the retracted height, and then contacted Can be withdrawn from the ring.

  [00129] Once the substrate is positioned on the contact ring 2402, the thrust plate assembly 2404 can be lowered to the processing position. More specifically, FIG. 24 shows the thrust plate 2404 in the substrate loading position, ie, the thrust plate 2404 is positioned vertically above the lower surface of the contact ring 2402 to maximize the access space 2406. The In this position, the robot 120 has the maximum amount of space that can be used to load the substrate into the contact ring 2402. However, when the substrate is loaded, the thrust plate 2404 can be actuated in the vertical direction, ie, the direction indicated by arrow 2410 in FIG. 24, to engage the back surface of the substrate located in the contact ring 2402. Engaging the thrust plate 2404 with the back of the substrate located on the contact ring 2402 mechanically secures the substrate to the contact ring 2402 for processing against the electrical contact pins located on the contact ring 2402. Will be biased.

  [00130] When the substrate is secured to the contact ring 2402 by the thrust plate 2404, the lower portion of the head assembly 2400, ie, the combination of the contact ring 2402 and the thrust plate 2404, is pivoted to a tilt angle. The lower part of the head assembly is pivoted to its tilt angle by pivoting the head assembly about pivot point 2408. The lower portion of the head assembly 2400 is manipulated about a pivot point 2408, which causes the lower portion of the head assembly 2400 to pivot as indicated by arrow 2409 in FIG. The lower surface of the head assembly 2400 and the plating surface of the substrate positioned on the contact ring 2402 are inclined to the inclination angle by the movement of the head assembly 2400, where the inclination angle is the plating surface of the substrate fixed to the contact ring 2402. / Defined as the angle between the production plane and the horizontal. This inclination angle is generally from about 3 ° to about 30 °, in particular from about 3 ° to about 10 °.

  [00131] Once the head assembly 2400 is tilted, it can be manipulated in the Z direction to begin the dipping process. More specifically, as shown in FIG. 25, the head assembly 2400 is operated in the direction indicated by the arrow 2501, so that the substrate positioned on the contact ring 2402 is moved to the plating cell 2504 positioned below the head assembly 2400. It can be transported towards the plating solution contained within. A plating cell 2504 generally similar to the plating cell 200 shown in FIG. 2 is configured to contain a plating solution. The plating volume is generally contained within the internal weir of the plating cell 2504 and overflows the uppermost point 2502 of this internal weir. Therefore, when the head assembly 2400 is moved toward the plating cell 2504, the bottom surface of the contact ring 2402, ie, the surface of the contact ring 2402 that is closest to the plating cell 2504 as a result of the tilt angle, causes the head assembly 2400 to Contact the plating solution when operated toward 2502. The process of manipulating head assembly 2400 toward cell 2502 may further include providing rotational movement to contact ring 2402. Thus, during the initial stages of the dipping process, the contact ring 2402 is also rotated about a vertical axis extending upwardly through the head assembly 2400 while being manipulated in the vertical or Z direction. In general, the vertical axis around which the contact ring 2402 is rotated is generally orthogonal to the substrate surface. The process of immersing a substrate in a plating solution while applying a bias to the substrate is a commonly assigned US patent filed January 18, 2001 under the name “Reverse Voltage Bias for Use in Electro-Chemical Plating System”. No. 09 / 766,060, which claims the benefit of US Pat. No. 6,258,220, filed April 8, 1999, both of which are incorporated by reference. This is incorporated herein in its entirety.

  [00132] When the substrate is immersed in the plating solution contained in the plating cell 2504, the Z movement of the head assembly 2400 is completed, and the inclined position of the contact ring 2402 is as shown in FIG. Return to level. The end of vertical or Z-direction movement is calculated to keep the substrate in the plating solution contained in cell 2504 when the tilt angle is removed. Furthermore, embodiments of the present invention also contemplate that removal of the tilt angle, i.e., returning the contact ring 2402 to a horizontal position, can be performed simultaneously with the vertical movement of the contact ring 2402 into the plating solution. Thus, embodiments of the present invention also contemplate that the substrate can be first contacted with the plating solution with the substrate positioned at the tilt angle, and then the tilt angle can be returned to horizontal while continuing to immerse the substrate in the plating solution. ing. This process generates unique movements that include both vertical and tilt angle operations, which have been shown to reduce bubble generation and adhesion to the substrate surface during the immersion process. Further, the vertical and pivoting operation of the substrate during the immersion process may include rotational movement of the contact ring 2402, which indicates that bubble formation and adhesion to the substrate surface during the immersion process is further minimized. Has been.

  [00133] Once the substrate is fully immersed in the plating solution contained in the cell 2504, the head assembly 2400 is further manipulated vertically (downward) to further immerse the substrate in the plating solution, ie FIG. As shown, the substrate can be positioned further or deeper in the plating solution. The process may also include rotation of the substrate, which serves to expel bubbles formed during the dipping process from the substrate surface. When the substrate is positioned deep within the plating solution, the head assembly 2400 is pivoted again about the pivot point 2408 so that the substrate surface is positioned at a tilt angle as shown in FIG. Can do. Further, since the head assembly 2400 has only manipulated the substrate downward into the plating solution in the previous step, the tilt movement shown in FIG. 8 generally moves the substrate surface from the plating solution on the high side of the tilted contact ring. It is not something to lift. More specifically, pivot point 2408 is located in the center of head assembly 2400 so that when head assembly pivots contact ring 2402 about pivot point 2408, one side of contact ring 2402 enters the plating solution. While the other side of the contact ring 2402 is lifted upward toward the surface of the plating solution as a result of the pivoting movement. Thus, since the substrate is intended to be maintained in the plating solution when immersed, the head assembly 2400 does not lift at least a portion of the substrate from the plating solution, but the contact ring 2402 in the horizontal direction shown in FIG. In order to move from position to the tilt position shown in FIG. 28, it must be further manipulated into the plating solution. The final tilting movement of the head assembly 2400 generally positions the contact ring 2402 in a processing position, that is, a position where the substrate supported by the contact ring 2402 is generally parallel to the anode located at the bottom of the plating cell 2502. Corresponds to Furthermore, positioning the contact ring 2402 in the processing position further manipulates the head assembly 2400 toward the anode located at the bottom of the plating cell so that the plating surface of the substrate is at a specific distance from the anode for plating processing. It may also include enabling the position.

  [00134] Furthermore, the dipping process of the present invention may include an oscillating motion configured to further enhance the bubble removal process. More particularly, the head assembly 2400 is tilted back and forth in a vibrating manner between a first tilt angle and a second tilt angle, i.e., when the substrate is immersed in a plating solution, It can be inclined several times between the second angle. This tilting movement can be done quickly, ie from about 2 tilts per second to about 20 tilts per second. This tilting motion may be accompanied by rotation, which further facilitates the expulsion of bubbles adhering to the substrate surface.

  [00135] The dipping process of the present invention may also include vertical oscillation of the substrate within the plating solution. More specifically, once the substrate is immersed in the plating solution, the substrate can be manipulated up and down. As the substrate is lifted up in the plating solution, the amount of solution under the substrate increases, thus forming a rapid flow of solution to the area under the substrate. Similarly, when the substrate is lowered, its amount decreases and an outward solution flow is generated. Thus, vertical substrate manipulation, i.e., repetitive up and down motion, causes a reverse or oscillating fluid flow on the substrate surface. Adding rotation to this vibration further increases the flow of oscillating fluid across the substrate surface. These oscillating fluid flows have been shown to improve bubble removal and therefore reduce defects.

  [00136] The immersion process of the present invention may further include rotational vibration of the substrate when the substrate is immersed in the plating solution. More particularly, the substrate is typically rotated during both the dipping and plating processes. This rotation generally increases the flow of fluid on the substrate surface by circulation of the deficient plating solution generated on the substrate surface. This rotational and fluid flow characteristics can also be used to facilitate bubble removal during the dipping process. More particularly, embodiments of the present invention also contemplate that the substrate can be rotated in varying speeds and directions during and / or after immersion of the substrate. For example, when the substrate is immersed in the solution, the substrate can be first rotated clockwise for a predetermined time, and then the rotation direction can be switched counterclockwise for a predetermined time. The direction of rotation may be switched several times or only once depending on the application.

  [00137] Furthermore, embodiments of the present invention may be implemented by combining the vibration methods described above. For example, the dipping process of the present invention may include tilting operations, rotating operations, and vertical operations, or any combination thereof.

  [00138] FIG. 29 is a diagram illustrating the substrate surface when the substrate surface is immersed in the electrolyte solution without being rotated and the substrate is inclined from the horizontal to the inclination angle. In this embodiment, the substrate 2907 begins to dip when the edge of the substrate first contacts the electrolyte solution at the first edge 2908 of the substrate 2907. As the vertical movement of the substrate support member or head assembly continues, the area of the substrate immersed in the electrolytic solution increases proportionally, as indicated by the shaded area 2909. Note, however, that the shaded area 2909 does not represent the total immersion area. Rather, area 2909 generally represents the most recently immersed area, so the area from the edge of the substrate to the line labeled j + 1 represents the total immersed area of the substrate at time J + 1. Therefore, to provide a constant current density across the substrate surface during the immersion process, the power source calculates or otherwise estimates or determines the aging area of the substrate being immersed, and uses this The time-varying current required to provide a constant current density over the area of the substrate immersed in the electrolytic solution can be determined. Accordingly, embodiments of the present invention provide current to the substrate as a function of the substrate immersion rate. This is because the immersion rate of the substrate, i.e. the vertical rate at which the substrate is immersed in the plating solution, directly corresponds to the change in the immersion area of the substrate during the immersion process. Furthermore, although the substrate is typically rotated during the dipping process, the area calculation is unchanged in non-rotated embodiments. This is because the rotation of the substrate does not increase or decrease the area of the substrate immersed in the plating solution per unit time.

  [00139] The calculation of the time-varying area of a substrate immersed in an electrolytic solution generally involves incrementally calculating the area of the subdivisions of the submerged portion of the substrate and then adding the sections together to provide a specific Including obtaining the total area immersed in time. This calculation and application of current to the substrate during the dipping process is described in “Apparatus and Method for Regulating the Electrical Power Applied to a Substrate During Immersion” filed on April 29, 2002, which is incorporated herein by reference in its entirety. In commonly assigned US patent application Ser. No. 10 / 135,546. Further, although this referenced patent application is generally directed to controlling immersion bias, Applicants also intend that this method can be used to control removal bias, as further described below. .

  [00140] In one embodiment of the present invention, the current supplied to the substrate is increased as the immersion surface area increases based on time calculations. For example, the total time of the immersion process can be determined by experimentation. The correlation between the elapsed time in the dipping process and the dipped surface area can then be determined by calculation. Thus, once the correlation between elapsed time and immersion area is determined, the current and supply to the substrate can be determined based on the increase in immersion time. This is because this time is proportional to the immersion area. Therefore, once the correlation between immersion time and immersion surface area is known, the process recipe can be modified to include a proportional change in the current supplied to the substrate during the immersion process, resulting in a uniform current density across the immersion surface area. Can be maintained throughout the dipping process.

  [00141] In another embodiment of the present invention, a sensor can be used to determine the exact radial or tilt position of the substrate during the immersion process. This position is thus transmitted to the controller, which can then calculate the immersion area in real time. This calculated immersion area can then be used to determine the current to be supplied to the substrate to maintain a uniform current density over the substrate immersion area. The granularity / incremental segment sampling of the measurement process can be increased by only making more measurements per unit time and thus by adjusting the current supplied to the immersion area more greatly per unit time. The end result of the embodiment shown here is to give a uniform current density over the immersion surface area of the substrate, but the embodiment shown here is a uniform current density over the immersion area of the substrate even during a non-uniform immersion process. give. For example, if the substrate immersion rate is not constant or not repeatable during each immersion process, the present invention can be used to maintain a uniform current density across the substrate immersion area regardless of the immersion rate. can do. This is because the current calculation is independent of the soaking time. Therefore, the feedback loop type system of the embodiment shown here can provide an advantage over other embodiments of the present invention of a particular configuration where the elapsed time of the immersion process is not constant over multiple substrate immersions.

  [00142] In another embodiment of the present invention, a method for maintaining a uniform current density across the substrate surface is used during the process of removing the substrate from the plating cell. For example, once the substrate plating process is complete, the substrate is removed from the plating chamber to reverse the steps of the dipping process. In this reverse immersion process, it is desirable to maintain a constant current density across the immersion surface of the substrate to avoid variations in uniformity, as well as a constant current density maintained during the immersion process. Thus, in this reverse immersion process, the current supplied to the substrate is reduced as the substrate immersion area is reduced to maintain a uniform current density across the substrate immersion area. The process of controlling the current to the substrate during this reverse immersion process is performed, for example, on a feedback loop type system or a time-varying current control type system, as described in previous embodiments. Regardless of the type of current control system implemented, the current delivered to the substrate during this reverse immersion process is generally proportional to the surface area of the substrate that remains immersed in the plating solution.

  [00143] The plating process includes applying an electrical bias to the substrate via the contact ring 2402. The plating bias is a forward bias, i.e., the plating bias is configured such that the substrate is more negatively charged than the anode 205 in the plating cell, so that positively charged metal ions in the plating solution are negatively charged. The charged substrate will be plated. In conventional plating systems, when the plating process is complete, the electrical bias is terminated and the substrate is removed from the plating cell. However, as noted above, conventional plating systems and methods generally include at least a slight time delay between termination of the plating bias and removal of the substrate from the plating solution. During this time delay, the substrate comes into contact with the plating solution, and the plating solution is often acidic in nature, so the plating solution will etch the surface of the plating layer during this time delay. This etch roughens the smooth surface of the plating layer, which is not beneficial for subsequent processing steps such as a CMP process.

  [00144] Therefore, the method and apparatus of the present invention is configured to apply a forward substrate removal bias (the substrate is negative relative to the anode) to the substrate during this delay time. This removal bias is configured to prevent etching of the surface of the plating layer, and therefore the removal bias is configured to preserve the smooth surface of the plating layer. The removal bias is generally applied to the substrate immediately after the plating bias is completed, i.e., the transition from plating bias to removal bias can be seamless, and the substrate is exposed to the plating solution without applying a forward bias. So that it won't be. Although the removal bias is calculated to be sufficient to prevent or prevent etching of the plating layer, the removal bias is also configured to minimize deposition on the surface of the plating layer. Thus, the removal bias can be configured to be just above the plating potential of the system, and the removal bias drive current is minimized, i.e., sufficient to prevent etching, while the plating layer has It can be such that no significant deposition occurs on the smooth top surface.

  [00145] Similar to the immersion bias control feature of the present invention described above, embodiments of the present invention are also configured to control the current applied during removal or recovery bias. For example, the controller 111 can be used to control the current and / or voltage applied to the substrate during the collection process. The current or voltage supplied to the substrate during recovery remains immersed in the plating solution longer than other areas of the substrate because the deposition thickness in an electrochemical plating process is generally a function of the exposure time to the plating solution. And can be controlled to prevent additional deposition in the area of the substrate. In addition, the voltage or current may prevent the current density in the submerged portion of the substrate from increasing during the substrate recovery process and generally increasing the plating rate in the portion of the substrate that remains immersed in the plating solution. Can also be controlled.

  [00146] Embodiments of the present invention include a voltage control system (a control system that monitors and regulates voltage and controls applied current or power), or a current control system (a control system that monitors and controls the current itself). Either is intended to control the removal bias. The current control system can be used to control the removal bias by maintaining a constant current density across the substrate surface during the entire substrate removal process. More specifically, as described above with respect to maintaining a constant current density across the substrate surface during the immersion process, the resistance of the electrical circuit supplying the removal bias changes as the substrate is removed from the plating solution. This resistance change is the result of a decrease in the immersed conductive surface area of the substrate, thereby increasing the resistance of the circuit. Therefore, as the resistance of the circuit increases and the immersion surface area decreases, the current control system of the present invention reacts to these changes to reduce the current delivered to the substrate and the current density across the surface area of the substrate is reduced. To remain constant throughout the recovery process. The control system can control the current in a closed loop, i.e., the current control system measures the resistance or other electrical parameter of the removal bias circuit and controls the current supplied thereto accordingly. Can be configured. Alternatively, the current control system may be configured to control the removal bias in response to mechanical conditions such as substrate position or another measurable mechanical parameter. For example, the position of the substrate, i.e., the vertical position of the substrate relative to the plating solution during the recovery process can be correlated with the immersion surface area of the substrate, and therefore the substrate position can be used to apply an electrical removal bias applied to the substrate. Can also be controlled. In addition, the electrical bias can be controlled in a time dependent manner, i.e., the electrical removal bias is adjusted for each unit time the substrate continues through the removal process, and thus the time of the removal process with the immersion surface area of the substrate or The periods can be essentially equivalent.

  [00147] During the substrate removal process, the substrate can be rotated, tilted, pivoted, manipulated vertically, manipulated horizontally, and / or vibrated with sonic or ultrasonic energy. For example, during the removal process of the present invention, the substrate can be rotated in the plating solution while the removal bias is initiated. The substrate can then be lifted vertically from the solution to remove the substrate from the solution. During this lifting process, the surface area of the substrate is incrementally removed from the plating solution and the electrical bias supplied thereto is the percentage of surface area that is removed from (or remains in solution) as described above. Controlled based on The substrate can be held in a horizontal position, that is, a position where the substrate surface is generally parallel to the top surface of the plating solution contained in the weir-type plating apparatus. Alternatively, the substrate surface may be inclined from the horizontal, that is, the substrate surface may be positioned so that an inclination angle is formed between the substrate surface and the upper surface of the plating solution in the weir-type plating plate. In this configuration, the tilt angle between the substrate surface and the top surface of the plating solution remains constant as the substrate is moved or lifted vertically from the solution. However, embodiments of the present invention also contemplate that the tilt angle can be changed during the removal process. For example, the tilt angle may be increased or decreased during the substrate removal process so that the tilt angle does not remain constant with vertical movement of the substrate from the solution, but rather increases or decreases as the substrate is removed. May be.

[00148] During the removal process, for example, the substrate may be rotated from about 5 rpm to about 100 rpm, and more particularly from about 20 rpm to about 60 rpm. The tilt angle of the substrate may be about 3 ° to about 30 °, more specifically about 5 ° to about 20 °. Also, the tilt angle may be increased or decreased during the removal process, or pivoted or vibrated. The electrical bias applied to the substrate during the removal process is about 0.5 mA / cm ^{3 to} about 5 mA / cm ³ , more specifically about 0.5 mA / cm ^{3 to} about 1 mA / cm ³ , or more Can be configured to generate a current density of about 1.0 mA / cm ^{3 to} about 3 mA / cm ³ across the substrate surface. The voltage applied to the substrate during removal may be, for example, from about 0.3 volts to about 10 volts, and more specifically from about 0.8 volts to about 5 volts.

  [00149] While embodiments of the present invention have been described, other and further embodiments may be devised without departing from the basic scope of the present invention, and thus the scope of the present invention. Is intended to be limited by the scope of the claims.

It is a top view which shows one Embodiment of the electrochemical plating system of this invention. It is a figure which illustrates embodiment of the plating cell used for the electrochemical plating cell of this invention. It is a perspective view which illustrates the annealing system of the present invention. It is an upper perspective view which illustrates the annealing chamber of this invention. It is a lower perspective view which illustrates the robot blade of this invention. It is a perspective view and partial sectional view of a heating plate of an annealing chamber. It is a perspective view of the lower part of a heating plate. It is a fragmentary perspective view and sectional view which illustrate a substrate spin rinse dry cell of the present invention. It is a fragmentary perspective view and sectional view which illustrate another substrate spin rinse dry cell of the present invention. It is the upper perspective view which illustrates the board engagement finger to the spin rinse dry cell of the present invention, and is a figure showing the finger in a closed position. It is the upper perspective view which illustrates the board engagement finger to the spin rinse dry cell of the present invention, and is a figure showing the finger in an open position. It is the side perspective view which illustrates the substrate engagement finger to the spin rinse dry cell of the present invention, and is a figure showing the finger in a closed position. It is the side perspective view which illustrates the board engagement finger to the spin rinse dry cell of the present invention, and is the figure showing the place which has a finger in an open position. It is sectional drawing which illustrates the hub assembly of this invention. It is an upper perspective view which shows the lower part of a hub assembly. It is an upper perspective view which illustrates the bevel washing cell of the present invention. FIG. 6 is a top perspective view illustrating a backside fluid dispense manifold for the bevel wash cell of the present invention. It is a perspective view which illustrates the substrate centering mechanism of the present invention. It is sectional drawing which illustrates the board | substrate centering member of this invention. It is a top view which illustrates the board | substrate centering member of this invention. It is a figure which illustrates the fluid delivery system of this invention. It is a figure which illustrates the tank and conduit structure of this invention. It is a perspective view which shows the internal component of the fluid tank of this invention. It is a top view which illustrates the fluid tank of this invention. It is a perspective view which illustrates the inner wall component of the fluid tank of this invention. It is a fragmentary perspective view and sectional view which illustrate the tank of the present invention. It is sectional drawing which shows the plating cell and head assembly in an inclination process. 2 is a cross-sectional view showing a plating cell and a head assembly during an immersion process, that is, during a vertical operation. It is sectional drawing which shows the plating cell and head assembly in the inclination process after immersion. It is sectional drawing which shows the plating cell and head assembly in an immersion process, and is a figure which shows the place where a head assembly positions a board | substrate in the plating solution deep. It is sectional drawing of the plating cell and head assembly which were located in the process position. It is a figure which shows the board | substrate area during immersion.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 ... ECP system, 102, 104, 106, 108, 110, 112, 114, 116 ... Processing place, 111 ... Process controller, 113 ... Platform (mainframe), 114, 116 ... Processing cell, 115 ... Link tunnel, 120 ... main frame robot, 130 ... factory interface, 132 ... robot, 134 ... substrate housing cassette, 135 ... annealing station, 136 ... cooling plate, 137 ... heating plate, 140 ... robot, 200 ... plating cell, 201 ... outer deep dish, 202 ... inner basin, 203 ... frame portion, 204 ... base member, 205 ... anode member, 206 ... membrane support assembly, 207 ... slot, 208 ... membrane, 209 ... fluid inlet / outlet, 210 ... diffusion pre 300 ... stacked annealing system, 301 ... frame, 302 ... anneal chamber, 304 ... fluid and gas supply assembly, 306 ... electric system controller, 400 ... processing volume, 401 ... chamber body, 402 ... heating plate, 404 ... Cooling plate, 406 ... Substrate transport mechanism, 408 ... Substrate support member / blade, 410 ... Substrate support tab, 412 ... Robot, 414 ... Access door, 416 ... Notch, 418 ... Substrate transfer mechanism actuator assembly, 420 ... Cooling fluid connection 422 ... Vacuum aperture 424 ... Pump down aperture 426 ... Gas dispense port 500 ... Strengthening blade member 501 ... Integral frame member 502 ... Substrate support ring or member 503 ... Substrate support tab 00 ... heating element, 604 ... thermocouple, 606 ... stem, 608 ... base member, 800 ... substrate spin rinse drying cell, 801 ... fluid bowl / body, 802 ... rotatable hub, 803 ... substrate support finger, 804 ... substrate 805 ... Dome member, 806 ... Fluid manifold, 807 ... Gas nozzle, 808 ... Fluid dispense nozzle, 810 ... Gas dispense nozzle, 812 ... Annular shield member, 814 ... Catch cup, 816 ... Curved surface, 818 ... Depressurized region, 1000 ... Upright pivoted airfoil / clamp member, 1001 ... Internal fixed post, 1002 ... Pivot point, 1004 ... Upper surface, 1005 ... Smooth surface, 1006 ... Channel, 1007 ... Base, 1008 ... Lower actuator part, 1010 ... Inclined surface 1101 ... Koji 1104 ... Gas dispense purge port, 1300 ... Bevel cleaning cell or chamber, 1301 ... Upright wall portion, 1302 ... Drain pan, 1303 ... Substrate chuck, 1304 ... Substrate centering pin, 1305 ... Rinse solution dispensing arm, 1306 ... Etching solution dispensing arm, 1400 ... Manifold, 1500 ... Substrate centering mechanism, 1502 ... Linkage, 1503 and 1504 ... Operation arm, 1505 ... Frame member, 1506 ... Receptacle, 1601 ... Cap member, 1602 ... Center part, 1603 ... Substrate centering Post, 1604 ... Core, 1605 ... Sleeve member, 1811 ... Plating solution delivery system, 1802 ... Additive source, 1804 ... Electrolyte source, 1806 ... Accelerator source, 1808 ... Leveling agent , 1810 ... inhibitor source, 1811 ... plating solution delivery system, 1812 ... dose pump, 1814 ... mass storage container, 1816 ... buffer container, 1830 ... second pump assembly, 1832 ... second manifold, 1834 ... valve train, 1836 ... sample Port, 1842 ... Deionized water source, 1844 ... Non-reactive gas source, 1850 ... First gas supply line, 1852 ... Second delivery line, 2400 ... Head assembly, 2402 ... Contact ring, 2404 ... Thrust plate, 2406 ... Access space, 2504 ... Plating cell

Claims (22)

A substrate plating cell located in the main frame, comprising a separated catholyte and anolyte volume;
A substrate bevel cleaning cell located in the main frame;
A substrate spin rinse drying cell located on the main frame;
A stack type substrate annealing station positioned so as to communicate with the main frame, the stack type substrate annealing station having a substrate heating plate and a substrate cooling plate positioned adjacent to each other in each chamber;
At least one substrate transfer robot configured to transfer a substrate between each of the cells and the annealing station;
Electrochemical plating system with The at least one spin rinse drying cell is
A cell bowl having an upright cylindrical wall;
An annular and inwardly curved decompression surface located at the top of the upright cylindrical wall;
A fluid receiving shield extending radially inward from the top of the upstanding cylindrical wall;
A rotatable substrate support member positioned in the center of the cell bowl;
A fluid dispensing nozzle configured to dispense a rinsing solution onto an upper surface of a substrate positioned on the support member;
The system of claim 1, comprising: The at least one plating cell is
A plating cell bowl having an overflow weir;
An anode located in the cell bowl;
An ion membrane positioned across the cell bowl between the anode and the overflow weir;
A diffusing member positioned over the cell bowl between the membrane and the overflow weir;
The system of claim 1, comprising:   The system of claim 3, wherein the diffusion member comprises a fluid permeable and porous ceramic member.   4. The system of claim 3, wherein the membrane comprises a cationic membrane. The plating cell is
A catholyte fluid inlet positioned to dispense a catholyte solution into the catholyte volume between the membrane and the overflow weir;
An anolyte fluid inlet positioned to dispense an anolyte solution into the volume of the cell bowl below the membrane;
The system of claim 5 comprising:   The stack type substrate annealing station is a substrate transfer robot positioned adjacent to the heating plate and the cooling plate, and is configured to transfer a substrate between the heating plate and the cooling plate. The system according to claim 1, comprising a transfer robot. The substrate bevel cleaning cell is
A substrate centering assembly;
A rotatable substrate support member;
A fluid dispensing nozzle positioned to dispense an etchant solution into an exclusion zone of a substrate being processed in the bevel cleaning cell;
The system of claim 1, comprising:   The substrate centering assembly includes a plurality of substrate support centering pins that can rotate in cooperation with each other, each of the substrate support centering pins being offset from a raised substrate support portion positioned on a vertical axis of the centering pin. 9. The system of claim 8, comprising a centered substrate post located in the center.   The system of claim 1, comprising a fluid delivery system configured to supply at least two different plating chemistries to each of the individual plating cells. A plurality of electrochemical plating cells located on a common platform;
A washing cell located on the platform;
An annealing chamber positioned to communicate with the platform;
A plurality of chemical fluid delivery systems positioned in fluid communication with the platform and in fluid communication with the plurality of plating cells, wherein the fluid solutions are mixed and distributed to each of the plurality of plating cells. A fluid delivery system configured to:
With multiple chemical plating systems. The electrochemical plating cell is
An overflow weir located at the top of the cell bowl;
An anode located in the cell bowl;
An ion membrane positioned across the cell bowl between the anode and the overflow weir;
A diffusing member positioned over the cell bowl between the membrane and the overflow weir;
The plating system according to claim 11, comprising:   The ion membrane further comprises a cationic membrane configured to separate the plating cell into an anolyte compartment below the membrane and a catholyte compartment above the membrane. 12. The plating system according to 12.   14. The plating system of claim 13, wherein the plurality of chemical fluid delivery systems are configured to supply a catholyte plating solution to the catholyte compartment and an anolyte solution to the anolyte compartment.   The plating system of claim 11, wherein the cleaning cell comprises a substrate spin rinse drying cell.   The plating system of claim 11, wherein the cleaning cell includes a substrate bevel cleaning cell. The bevel washing cell is
A rotatable vacuum chuck,
A plurality of substrate center rig posts positioned radially outward of the vacuum chuck;
A movable fluid dispensing nozzle positioned to dispense an etchant solution onto a substrate bevel positioned at the vacuum chuck;
The plating system according to claim 11, comprising:   The plating system according to claim 17, wherein the plurality of substrate centering posts includes a lifted substrate support portion positioned on a longitudinal axis of the centering post and a centering post positioned eccentrically.   The plating system according to claim 11, wherein the annealing chamber constitutes a stacked annealing system, and each annealing chamber of the stack includes a heating plate, a cooling plate, and a gas distribution nozzle. An electrochemical plating cell located on the processing platform,
A cell body configured to contain a plating solution and in which an overflow weir is located;
An anode located in the cell body;
An ion membrane positioned over the cell body at a location above the anode and below the overflow weir, separating the anolyte compartment below the membrane from the catholyte compartment above the membrane. An ion membrane, and a porous diffusion member positioned over the cell body in the catholyte compartment,
An electrochemical plating cell that includes:
A substrate cleaning cell located on the processing platform;
A stacked substrate annealing station positioned to communicate with the processing platform;
Electrochemical plating system with   21. The plating system of claim 20, wherein the substrate cleaning cell includes at least one of a substrate spin rinse drying cell and a substrate bevel cleaning cell. The stack type substrate annealing station includes a plurality of stack type annealing chambers, and each of the stack type annealing chambers includes:
A heating plate located in the chamber;
A cooling plate located in the chamber;
A substrate transfer robot positioned to transfer a substrate between the heating plate and the cooling plate;
A gas dispensing nozzle in fluid communication with the interior of the chamber;
The plating system according to claim 20, comprising:

Images