CN101371342A - Heating method and heating system for batch-type reaction chamber - Google Patents
Heating method and heating system for batch-type reaction chamber Download PDFInfo
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- CN101371342A CN101371342A CNA2007800023389A CN200780002338A CN101371342A CN 101371342 A CN101371342 A CN 101371342A CN A2007800023389 A CNA2007800023389 A CN A2007800023389A CN 200780002338 A CN200780002338 A CN 200780002338A CN 101371342 A CN101371342 A CN 101371342A
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- heating
- heating unit
- heater
- reative cell
- temperature
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B17/00—Monitoring; Testing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- General Physics & Mathematics (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
The invention provides a heating apparatus for a batch-type reaction chamber, in which a heater party including a plurality of heaters is arranged repeatedly along with a circumference of the reaction chamber, wherein each of the heaters has a temperature controlling part, a voltage applying line and a pair of a first and a second heating units, the pair of the first and the second heating units being separated from each other and serving as heating bodies for the reaction chamber and wherein the sum of the length of each pair of the first and the second heating units is fixed, each of the first heating units not having a same length and each of the second heating units not having a same, is provided.
Description
Technical field
The present invention relates to a kind of heater; Relate more specifically to heater heater, that be used for batch-type reaction chamber of a kind of employing rapid thermal treatment (RTP) usefulness, form the different heating zone with different temperatures by handling the space for the upper and lower in the reative cell, it can be controlled the temperature in the reative cell easily and set up even temperature in reative cell and distribute.
Background technology
Generally, the technology that is used for making semiconductor or flat-panel monitor such as LCD (LCD), plasma display (PDP) etc. comprises the multiple tracks Technology for Heating Processing.For example, thin film deposition processes, activation technology or crystallization processes comprise the Technology for Heating Processing as a unit process.Film forming widely used method is a chemical vapor deposition (CVD), and wherein the product that produces after the compound reaction by gaseous state on the surface of basic material that is heated is deposited on the described surface.Especially, described CVD technology is included in a very important unit process of making in semiconductor, flat-panel monitor such as the technologies such as LCD, PDP.
Fig. 1 represents to be used for the batch-type CVD device of depositing silicon film in substrate, as semiconductor manufacturing facility, a plurality of substrates to be processed is arranged wherein.The microstructure of film and growth thereof are determined by the generation and the diffusion into the surface of nuclear, are subjected to the influence of base reservoir temperature, reactor pressure and gas phase composition, and are changed by heat treatment or subsequent technique.
Described semiconductor manufacturing facility comprises provides the reative cell 1 of handling the space; Be used in reative cell 1, setting up the firing equipment 2 of heat treatment environment; With the gas supply equipment that is used for source of supply gas (not drawing).In addition because what use is corrosion and poisonous gas, described CVD device comprise have cold-trap, the exhaust equipment of gas cleaner etc. and keep handling the conversion equipment of the cleannes in the space.In addition, the batch-type ship 3 that is used for loading a plurality of semiconductor wafers 100 comprises the lifting means 4 that is used for a plurality of wafers 100 are introduced reative cells 1.In addition, end effector 5 is as the transfer equipment that loads/pull down wafer 100 between batch-type ship 3 and station.
Simultaneously, for realize handling fast or in reative cell 1, carry out other Technology for Heating Processing continuously, can use rapid thermal treatment (RTP) heater to firing equipment 2.
Graphite, cantar alloy or pottery are used as the heating resistor of firing equipment 2.In addition, according to its shaping characteristic, firing equipment 2 can not be the such coil shape of electric heater, but by dividing the columnar shape of reative cell 1, is made up of a plurality of bar-shaped heating units 6 that are arranged in longitudinal direction.
Yet there is defective in such heating unit 6, promptly is difficult to control temperature and is difficult to set up even temperature in the entire process space distribute.Because the important factor in order of still not film shaped rate of the temperature of the heat decomposition temperature of source gas and wafer 100 or particle generation rate, and be the important factor in order of described product or microstructure, described temperature should be controlled more accurately by firing equipment 2.
The influence of described temperature thermal radiation and thermal convection is for heat treatment should be set up in entire reaction chamber 1 equably.
Because batch-type is handled the volume ratio single-piece in space and handled the big manyfold of volume in space, so be necessary for each part, promptly the space is handled in the above and below, carries out temperature control, distributes to set up even temperature in batch-type is handled the space.At length, the top reative cell need be heated to the temperature lower than the temperature of below reative cell, to remedy the Temperature Distribution of bringing because of thermal convection, distributes thereby set up even temperature in reative cell 1.In fact, the coil form electric heater comprises that the separated heating unit in its top and the bottom is a heater coil, to control the temperature of reative cell up and down respectively, distributes thereby set up even temperature in entire reaction chamber 1.
Summary of the invention
Technical problem
Yet, arranged that by longitudinal direction be difficult to each part for the entire process space, promptly the above and below part is set up different heating-up temperatures, causes deterioration in heat treated a plurality of unit processes along reative cell because be used for the bar-shaped heating unit of RTP.
Technical solution
Therefore, a basic purpose of the present invention provides heater heater, that be used for batch-type reaction chamber of a kind of employing rapid thermal treatment (RTP) usefulness, form the different heating zone with different temperatures by handling the space for the upper and lower in the reative cell, it can be controlled the temperature in the reative cell easily and set up even temperature in reative cell and distribute.
Beneficial effect
According to the present invention, adopt heater heater, that be used for batch-type reaction chamber of rapid thermal treatment (RTP) usefulness, be provided with a plurality of heating units that are divided into top and lower part, described top and the bottom are respectively applied for the upper and lower of reative cell and handle the space, boundary position on the longitudinal axis between top and the lower part changes, so control is handled the temperature in space up and down and distributed in the indoor even temperature of setting up of entire reaction.
Description of drawings
From the explanation of the following preferred implementation that provides in conjunction with the accompanying drawings, above and other objects of the present invention and feature will become obviously, wherein:
Fig. 1 is a semi-conductor manufacturing system of carrying out heat treated;
Fig. 2 is the outward appearance according to heater of the present invention; With
Fig. 3 presents according to heater of the present invention in concrete mode.
Preferred forms of the present invention
In following detailed description, be with reference to accompanying drawing, accompanying drawing represents to implement specific embodiments of the present invention in the mode of example.These embodiments have obtained enough explaining, to enable those skilled in the art to implement the present invention.Should be appreciated that various embodiments of the present invention, although different, not to repel mutually.For example, concrete feature, structure or characteristics of describing in conjunction with an embodiment can obtain implementing in the embodiment at other under the situation that does not break away from the spirit and scope of the present invention.In addition, should be appreciated that the position of the discrete component in the embodiment that each is disclosed or arrange and under the situation that does not break away from the spirit and scope of the present invention, to make amendment.Therefore, following detailed description is not made in limiting sense, and scope of the present invention is only by claim, under the situation of proper interpretation, together with the equivalent qualification of all scopes that belong to claim.In each figure, same sequence number refers to same or similar functions.
According to one aspect of the present invention, a kind of heater that is used for batch-type reaction chamber is provided, repeat to arrange along the periphery of reative cell comprising the heater group of a plurality of heaters, each heater has temperature control unit, the line of exerting pressure, a pair of first and second heating unit, and described paired first and second heating units are separate and as the calandria of reative cell; Wherein the total length of every pair of first and second heating unit is fixed, and each first heating unit has different length, and each second heating unit has different length.
According to another aspect of the present invention, a kind of heating means that are used for batch-type reaction chamber are provided, repeat to arrange along the periphery of reative cell comprising the heater group of a plurality of heaters, each heater has temperature control unit, the line of exerting pressure, a pair of first and second heating unit, and described paired first and second heating units are separate and as the calandria of reative cell; Wherein the total length of every pair of first and second heating unit is fixed, each first heating unit has different length, each second heating unit has different length, the step that described method comprises has: by regulating the heat that produces from each first and second heating unit respectively, the temperature of control reative cell.
Embodiments of the present invention
Illustrate in greater detail the present invention referring now to accompanying drawing.
Fig. 2 represents the outside drawing according to heater of the present invention; Fig. 3 presents according to heater of the present invention in concrete mode.
As mentioned above, described heater, the temperature that it can control the reative cell of above and below respectively is installed in according in the batch-type reaction chamber 1 of the present invention.
According to the present invention, a plurality of heating units 12 are provided, it is divided into top and lower part, is used to be respectively handle the space up and down heat is provided.Described heating unit 12 is arranged along the periphery that comprises the reative cell 1 of handling the space up and down, to provide heat to reative cell 1.The top and the bottom of heating unit 12 strike up partnership to constitute heater 14.The top and the bottom of heating unit 12 have independently exert pressure line and Temperature-controlled appliance 10, so provide different temperature, promptly different calorie values for handling the space up and down.In addition, heater 14 is arranged along the periphery of reative cell 1, to constitute Heater group 16, is (being the different stages) that changes simultaneously on the border between the top and the bottom on the longitudinal axis.
As shown in Figure 3, heating unit 12 has the below part of the upper section of H1, H2, H3 type and H1 ', H2 ', H3 ' type, and these parts repeat with the order of the rule periphery along reative cell 1, to form Heater group 16.Because identical heating region, as T1, T2, T3 is assigned with identical type, and desirable is to connect identical type to share exert pressure line and Temperature-controlled appliance.With reference to Fig. 3, Heater group 16 is become by three heater groups, and it comprises three heaters 14 respectively, and promptly 12, three pairs of heating units 12 of three pairs of heating units are to three heating region T1, T2, and T3 provides heat.Yet the logarithm of heating unit 12 and heater group's quantity can change, and determines according to size of the volume in entire process space and calorie value, heating unit etc. experimentally.
Simultaneously, for keep exerting pressure line and ground wire away from heating region, heating unit 12 is set to U-shaped.In addition, the horizontal component of U-shaped heating unit can provide the assistant heating part 20 of supplemental heat, as shown in Figure 3.
By the serviceability temperature control appliance, Heater group 16 control heating region such as T1, T2, the temperature of T3.For example, handle the space because heat is concentrated in the top of batch-type reaction chamber 1, as mentioned above, heating-up temperature should be created as and satisfy such inequality: T1＜T2＜T3.In order to satisfy this inequality, the temperature of H1 should reduce, and the temperature of H3 ' should rise, and distributes so set up even temperature in entire reaction chamber 1.
In addition, the temperature control in the reative cell 1 can be carried out by control unit.Temperature control is accomplished through the following steps, promptly laying temperature transducer, connection are used as the input port of the temperature sensor of detection means to control unit in heating region, temperature-controlled cabinet wherein is installed is used for carrying out feedback process so that the temperature of each heating region is even, with the Temperature-controlled appliance of the delivery outlet that is connected control unit to each heating unit 12 with temperature-controlled cabinet according to the temperature of setting up in the reative cell 1.In order to realize feedback process, drive heating unit and set up suitable temperature range, and the control Temperature-controlled appliance is to keep suitable temperature range.
Although draw and described the present invention with regard to preferred embodiment, it will be understood by those of skill in the art that the spirit and scope that the claim below not having to break away from limits, can make variations and modifications.
Claims (4)
1. heater that is used for batch-type reaction chamber repeats to arrange along the periphery of reative cell comprising the heater group of a plurality of heaters,
Wherein each heater have temperature control unit, the line of exerting pressure, a pair of first and second heating unit, described paired first and second heating units are separate and as the calandria of reative cell; With
Wherein the total length of every pair of first and second heating unit is fixed, and each first heating unit has different length, and each second heating unit has different length.
2. heater as claimed in claim 1, wherein each has the shared temperature control unit of first heating unit of same length and the line of exerting pressure; With
Each has second heating unit of same length and shares the temperature control unit and the line of exerting pressure.
3. heater as claimed in claim 1, wherein each first and second heating unit has the U-shaped shape.
4. heating means that are used for batch-type reaction chamber repeat to arrange along the periphery of reative cell comprising the heater group of a plurality of heaters,
Each heater has temperature control unit, the line of exerting pressure, a pair of first and second heating unit, and described paired first and second heating units are separate and as the calandria of reative cell; With
Wherein the total length of every pair of first and second heating unit is fixed, and each first heating unit has different length, and each second heating unit has different length,
The step that described method comprises has:
By regulating the heat that produces from each first and second heating unit respectively, the temperature of control reative cell.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060004393 | 2006-01-16 | ||
| KR1020060004393A KR100800504B1 (en) | 2006-01-16 | 2006-01-16 | Heating Method and Heating Apparatus for Batch Type Reaction Chamber |
| PCT/KR2007/000244 WO2007081185A1 (en) | 2006-01-16 | 2007-01-15 | Heating apparatus for batch type reaction chamber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101371342A true CN101371342A (en) | 2009-02-18 |
| CN100594589C CN100594589C (en) | 2010-03-17 |
Family
ID=38256542
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200780002338A Expired - Fee Related CN100594589C (en) | 2006-01-16 | 2007-01-15 | Heating plant and heating method used for batch type reaction chamber |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR100800504B1 (en) |
| CN (1) | CN100594589C (en) |
| TW (1) | TWI334159B (en) |
| WO (1) | WO2007081185A1 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101385676B1 (en) * | 2012-04-27 | 2014-04-16 | 주식회사 테라세미콘 | Batch type apparatus |
| KR101377751B1 (en) * | 2012-04-27 | 2014-03-26 | 주식회사 테라세미콘 | Batch type apparatus |
| KR101456831B1 (en) * | 2012-06-20 | 2014-11-03 | 엘지디스플레이 주식회사 | Heating Apparatus for Manufacturing Display Device |
| KR101982725B1 (en) * | 2012-12-26 | 2019-05-27 | 주식회사 탑 엔지니어링 | Heating Assembly for Substrate Thermal Treatment Device |
| KR101512329B1 (en) * | 2013-06-25 | 2015-04-15 | 주식회사 테라세미콘 | Batch type apparatus for processing substrate |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000055729A (en) * | 1999-02-09 | 2000-09-15 | 윤종용 | Semiconductor fabricating apparatus having heater for heating chamber |
| JP2004221102A (en) * | 2003-01-09 | 2004-08-05 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
-
2006
- 2006-01-16 KR KR1020060004393A patent/KR100800504B1/en active IP Right Grant
-
2007
- 2007-01-04 TW TW096100313A patent/TWI334159B/en not_active IP Right Cessation
- 2007-01-15 WO PCT/KR2007/000244 patent/WO2007081185A1/en active Application Filing
- 2007-01-15 CN CN200780002338A patent/CN100594589C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR100800504B1 (en) | 2008-02-04 |
| KR20070075770A (en) | 2007-07-24 |
| TWI334159B (en) | 2010-12-01 |
| CN100594589C (en) | 2010-03-17 |
| TW200737288A (en) | 2007-10-01 |
| WO2007081185A1 (en) | 2007-07-19 |
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Granted publication date: 20100317 Termination date: 20110115 |