CN112719607B - Method for processing gallium nitride by femtosecond laser dry etching - Google Patents
Method for processing gallium nitride by femtosecond laser dry etching Download PDFInfo
- Publication number
- CN112719607B CN112719607B CN202011489533.2A CN202011489533A CN112719607B CN 112719607 B CN112719607 B CN 112719607B CN 202011489533 A CN202011489533 A CN 202011489533A CN 112719607 B CN112719607 B CN 112719607B
- Authority
- CN
- China
- Prior art keywords
- gallium nitride
- femtosecond laser
- etching
- processing
- dry etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 75
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 75
- 238000012545 processing Methods 0.000 title claims abstract description 62
- 238000001312 dry etching Methods 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000009616 inductively coupled plasma Methods 0.000 claims abstract description 42
- 238000005530 etching Methods 0.000 claims abstract description 41
- 239000000463 material Substances 0.000 claims abstract description 35
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 20
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 20
- 238000004140 cleaning Methods 0.000 claims description 10
- 230000001276 controlling effect Effects 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 10
- 229910021641 deionized water Inorganic materials 0.000 claims description 10
- 238000013519 translation Methods 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 230000001105 regulatory effect Effects 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 238000005459 micromachining Methods 0.000 claims description 6
- 238000000608 laser ablation Methods 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- 230000004048 modification Effects 0.000 abstract description 2
- 238000012986 modification Methods 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract 1
- 238000002679 ablation Methods 0.000 abstract 1
- 229910052801 chlorine Inorganic materials 0.000 abstract 1
- 239000000460 chlorine Substances 0.000 abstract 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 238000004590 computer program Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Laser Beam Processing (AREA)
Abstract
The invention relates to a method for processing gallium nitride by femtosecond laser-assisted dry etching, which realizes the preparation of a gallium nitride material microstructure. Firstly, forming an ablation crater on the surface of a gallium nitride material by using femtosecond laser to realize local area modification of the gallium nitride material; and then, in the atmosphere of mixed gas of chlorine and boron trichloride, physically and chemically etching the gallium nitride material processed by the femtosecond laser by adopting an inductively coupled plasma dry etching method, wherein the property of the gallium nitride material is changed after the femtosecond laser irradiation, so that the etching rate of a modified area formed after the femtosecond laser irradiation and an unmodified area is different in the inductively coupled plasma dry etching, and finally, a microstructure is formed in the femtosecond laser modified area. The invention provides a method for processing gallium nitride materials, which has simple processing mode and low cost.
Description
Technical Field
The invention relates to a method for processing gallium nitride by femtosecond laser dry etching, wherein the processing of gallium nitride material is realized by combining femtosecond laser processing and Inductively Coupled Plasma (ICP) dry etching. Belonging to the technical field of femtosecond laser application.
Background
Gallium nitride is used as a representative third-generation semiconductor material, has excellent properties such as forbidden bandwidth, strong chemical stability, ultraviolet light transmittance and the like, and is often applied to the preparation of devices such as deep ultraviolet Light Emitting Diodes (LEDs) and ultraviolet Lasers (LDs). However, gallium nitride has very stable chemical properties, making it substantially unreactive with acidic and alkaline solutions at room temperature; meanwhile, gallium nitride also has the characteristics of high hardness, high melting point and the like. It is always difficult to micromachine gallium nitride, and it is difficult to micromachine gallium nitride by methods such as conventional machining or wet etching.
For the processing of gallium nitride materials, for a long time, gallium nitride materials are processed by means of a method combining a photolithography technique and a dry etching technique, but the technique needs photolithography processing on the gallium nitride materials, so that the problems of complex processing technology, high technical threshold and the like are caused. In recent years, with the development of femtosecond laser micro-nano processing technology, the femtosecond laser technology is used for processing gallium nitride materials, however, the obtained surface quality is difficult to meet the use requirement. Therefore, the femtosecond laser and the dry etching are combined, and the difficult problems are expected to be solved.
Disclosure of Invention
The invention aims to provide a method for processing gallium nitride by femtosecond laser and dry etching, which solves the problems of complex process, high technical threshold, low processing quality and the like of the existing processing method. The method comprises the steps of processing the surface of a gallium nitride material by using a femtosecond laser technology to form a laser modified area, then utilizing ICP dry etching to remove materials in different areas at different rates according to different etching rates of the laser modified area and an unmodified area of the gallium nitride material, and finally realizing the processing of the gallium nitride material with simple processing technology, low cost and high quality.
The purpose of the invention is realized by the following technical scheme:
a method for processing gallium nitride by femtosecond laser dry etching comprises the following steps:
step one, building a femtosecond laser micromachining system, and selecting femtosecond laser with the center wavelength of 800nm, the repetition frequency of 1kHz and the pulse width of 30 fs. Focusing the gallium nitride sample on the surface of a gallium nitride sample fixed on a three-dimensional translation table through an objective lens with the numerical aperture of 0.5;
regulating the number of pulses of the femtosecond laser acting on the surface of the gallium nitride to be 50-400, the pulse energy to be 3-9mW and the processing point interval to be 20 mu m;
step three, ultrasonically cleaning a gallium nitride sample processed by the femtosecond laser in acetone, ethanol and deionized water for 5 minutes respectively, and removing particles generated by laser ablation and scattered on the surface of the sample;
step four, placing the cleaned sample in an etching cavity of an inductively coupled plasma etching system in Cl 2 And BCl 3 The dry etching processing of the gallium nitride material microstructure is realized by controlling the etching parameters under the plasma environment of the mixed gas;
and fifthly, ultrasonically cleaning the etched gallium nitride in acetone, ethanol and deionized water for 5 minutes respectively to obtain a sample with the microstructure array.
The target material used as the target material is a gallium polar gallium nitride material.
The femtosecond laser micromachining system for processing the micro-nano structure array on the surface of the gallium nitride comprises: the self-built femtosecond laser modulation light path, the three-dimensional accurate control translation platform and the real-time monitoring system. The self-built femtosecond laser modulation optical path consists of a femtosecond laser 1, a gradual attenuation sheet 2, an optical shutter 3, an iris diaphragm 4, a reflector 5, a reflector 6, a reflector 7, an objective lens 8 and a three-dimensional accurate control translation table 10. Connection relation: the light beam emitted by the femtosecond laser 1 passes through the gradual attenuation sheet 2, the optical shutter 3 and the iris diaphragm 4, passes through the reflectors 5, 6 and 7, and is vertically focused on the surface of a sample 9 through the objective lens 8; the gradual change attenuation sheet 2 regulates and controls the energy of the femtosecond laser, the optical shutter 3 controls the on-off and the irradiation time of the femtosecond laser, and the variable diaphragm 4 adjusts the size of the light inlet aperture. The sample 9 is fixed on a three-dimensional precision control translation stage 10 controlled by a computer program. The focused laser pulse acts on the surface of the material to realize processing on the target material.
The inductively coupled plasma etching system utilizes the radio frequency antenna to generate high-density plasma in the discharge cavity in an inductively coupled mode, and simultaneously, the etching workbench introduces radio frequency bias, and under the action of the radio frequency bias, the plasma vertically and downwards carries out physical bombardment on the surface of an etched material and generates chemical reaction with the surface of the material, so that the purpose of etching a sample is achieved.
The etching gas of the inductive coupling plasma etching is Cl 2 And BCl 3 The total flow rate of the mixed gas of (1) is 30-70sccm, wherein Cl 2 The gas flow rate of (3) is 10-30sccm, BCl 3 The gas flow rate of (2) is 25-40sccm. The etching process parameters of the plasma etching system are that ICP power is 300-600W, RF power is 100W, reaction cavity pressure is 10mTorr, and temperature is 25 ℃.
The femtosecond laser assisted dry etching processing of gallium nitride is to modify a local gallium nitride material by using femtosecond laser, so that the etching rates of a femtosecond laser modified area and an unmodified area are different under the dry etching of inductively coupled plasma, and a concave or convex structure is formed.
The invention has the advantages that:
1) The invention greatly simplifies the method for processing the gallium nitride microstructure array, can quickly prepare the large-scale microstructure array by femtosecond laser irradiation, effectively solves the problems of complex process, high technical threshold and the like of the photoetching technology, improves the processing process flow of the microstructure processed by the traditional dry etching method, and saves the processing cost.
2) Compared with a processing technology combining a photoetching technology and a dry etching technology, the processing technology is simple. And (3) performing local area irradiation modification on the gallium nitride material by adopting femtosecond laser, so that the etching rates of a laser irradiation area and a non-irradiation area in the ICP dry etching process are different, and the processing of the microstructure is realized. Therefore, a photolithographic mask is not required in the whole process, thereby simplifying the processing process.
3) The invention utilizes the femtosecond laser to process the material with high hardness and stable chemical property by the ICP dry etching, and fully utilizes the advantages of the two methods to process the gallium nitride material with high hardness and stable chemical property.
Drawings
FIG. 1 is a processing light path diagram of a micro-structure array prepared on the surface of gallium nitride by femtosecond laser;
wherein, 1 is a femtosecond laser; 2 is a gradual change attenuation sheet; 3 is an optical shutter; 4 is an iris diaphragm; 5 is a reflector; 6 is a reflector; 7 is a reflector; 8 is an objective lens; 9 is a sample; and 10 is a three-dimensional translation stage.
FIG. 2 is a schematic diagram of ICP dry etching gallium nitride.
Detailed Description
The structural and operational principles of the present invention are described in detail below with reference to the accompanying drawings.
Referring to fig. 1 and 2, when the method is realized, a femtosecond laser micro-nano processing platform is firstly built, light beams emitted by a femtosecond laser 1 pass through a gradual attenuation sheet 2, an optical shutter 3 and an iris diaphragm 4, pass through reflectors 5, 6 and 7, and finally are vertically focused on the surface of a sample 9 through an objective lens 8; the gradual change attenuation sheet 2 regulates and controls the energy of femtosecond laser, the optical shutter 3 controls the on-off and irradiation time of the femtosecond laser, and the variable diaphragm 4 adjusts the size of a light inlet aperture. The sample 9 is fixed on a three-dimensional precision control translation stage 10 controlled by a computer program. Processing the gallium nitride material by femtosecond laser; and then, carrying out dry etching on the gallium nitride material processed by the femtosecond laser by using an ICP (inductively coupled plasma) dry etching system in the figure 2 to finally obtain a gallium nitride sample with a microstructure array.
Example 1
The method for processing the gallium nitride by utilizing the femtosecond laser dry etching comprises the following specific steps:
step one, building a femtosecond laser micromachining system, and selecting femtosecond laser with the center wavelength of 800nm, the repetition frequency of 1kHz and the pulse width of 30 fs. Focusing the gallium nitride sample surface fixed on a three-dimensional translation stage through an objective lens with the numerical aperture of 0.5;
regulating and controlling the number of pulses of the femtosecond laser acted on the surface of the gallium nitride to be 1000, wherein the pulse energy is 8mW, and the processing point interval is 20 mu m;
step three, ultrasonically cleaning the femtosecond laser processed gallium nitride sample in acetone, ethanol and deionized water for 5 minutes respectively, and removing particles generated by laser ablation and scattered on the surface of the sample; step four, placing the cleaned sample in an etching cavity of an inductively coupled plasma etching system in Cl 2 And BCl 3 The dry etching processing of the gallium nitride material microstructure is realized by controlling the etching parameters under the plasma environment of the mixed gas;
and fifthly, ultrasonically cleaning the etched gallium nitride in acetone, ethanol and deionized water for 5 minutes respectively to obtain a sample with the microstructure array.
The schematic diagram of a processing light path of the method for processing the gallium nitride by femtosecond laser dry etching is shown in attached figure 1, the schematic diagram of ICP dry etching is shown in attached figure 2, and the specific processing parameters of the ICP dry etching are as follows:
1) Placing the sample cleaned in the fourth step into an etching cavity of an inductively coupled plasma etching system, regulating and controlling the total flow of gas to be 35sccm 2 The gas flow rate was 10sccm, BCl 3 The gas flow rate of (2) is 25sccm.
2) The ICP power of the ICP dry etching is set to be 500W, the RF power is set to be 100W, the pressure of the reaction chamber is 10mTorr, the temperature is 25 ℃, and the etching time is set to be 40min.
And (3) processing results: under the femtosecond laser processing parameters and the ICP etching parameters of embodiment 1, the gallium nitride material around the micropore structure processed by the femtosecond laser is removed by ICP etching to form a small boss structure, so that a raised microstructure array is processed on the gallium nitride surface.
Example 2
The method for processing the gallium nitride by using the femtosecond laser dry etching comprises the following specific steps:
step one, building a femtosecond laser micromachining system, and selecting femtosecond laser with the center wavelength of 800nm, the repetition frequency of 1kHz and the pulse width of 30 fs. Focusing the gallium nitride sample surface fixed on a three-dimensional translation stage through an objective lens with the numerical aperture of 0.5;
regulating the number of pulses of the femtosecond laser acting on the surface of the gallium nitride to be 50, wherein the pulse energy is 7mW, and the processing point interval is 20 microns;
step three, ultrasonically cleaning the femtosecond laser processed gallium nitride sample in acetone, ethanol and deionized water for 5 minutes respectively, and removing particles generated by laser ablation and scattered on the surface of the sample; step four, placing the cleaned sample in an etching cavity of an inductively coupled plasma etching system in Cl 2 And BCl 3 The dry etching processing of the gallium nitride material microstructure is realized by controlling etching parameters under the plasma environment of the mixed gas;
and step five, ultrasonically cleaning the etched gallium nitride in acetone, ethanol and deionized water for 5 minutes respectively to obtain a sample with a microstructure array.
The schematic diagram of the processing light path of the method for processing the gallium nitride by femtosecond laser dry etching is shown in an attached drawing 1, the schematic diagram of ICP dry etching is shown in an attached drawing 2, and the specific processing parameters of the ICP dry etching are as follows:
1) Placing the sample cleaned in the fourth step into an etching cavity of an inductively coupled plasma etching system, regulating and controlling the total gas flow to be 35sccm 2 The gas flow rate was 10sccm, BCl 3 The gas flow rate of (2) is 25sccm.
2) The ICP power of the ICP dry etching is set to be 300W, the RF power is set to be 100W, the pressure of the reaction chamber is 10mTorr, the temperature is 25 ℃, and the etching time is 40min.
And (3) processing results: under the femtosecond laser processing parameters and the ICP etching parameters of embodiment 2, the microporous structure processed by the femtosecond laser is removed by ICP dry etching, and the obtained processed material surface is smooth and can be processed into an inwardly recessed microstructure array.
Example 3
The method for processing the gallium nitride by utilizing the femtosecond laser dry etching comprises the following specific steps:
step one, building a femtosecond laser micromachining system, and selecting femtosecond laser with the center wavelength of 800nm, the repetition frequency of 1kHz and the pulse width of 30 fs. Focusing the gallium nitride sample on the surface of a gallium nitride sample fixed on a three-position translation stage through an objective lens with the numerical aperture of 0.5;
regulating the number of pulses of the femtosecond laser acting on the surface of the gallium nitride to be 50, wherein the pulse energy is 4mW, and the processing point interval is 20 mu m;
step three, ultrasonically cleaning a gallium nitride sample processed by the femtosecond laser in acetone, ethanol and deionized water for 5 minutes respectively, and removing particles generated by laser ablation and scattered on the surface of the sample;
step four, placing the cleaned sample in an etching cavity of an inductively coupled plasma etching system in Cl 2 And BCl 3 The dry etching processing of the gallium nitride material microstructure is realized by controlling the etching parameters under the plasma environment of the mixed gas;
and fifthly, ultrasonically cleaning the etched gallium nitride in acetone, ethanol and deionized water for 5 minutes respectively to obtain a sample with the microstructure array.
The schematic diagram of a processing light path of the method for processing the gallium nitride by femtosecond laser dry etching is shown in attached figure 1, the schematic diagram of ICP dry etching is shown in attached figure 2, and the specific processing parameters of the ICP dry etching are as follows:
1) Placing the sample cleaned in the fourth step into an etching cavity of an inductively coupled plasma etching system, regulating and controlling the total flow of gas to be 70sccm 2 The gas flow rate of (3) is 40sccm, BCl 3 The gas flow rate of (2) is 30sccm.
2) The ICP power of the ICP dry etching is set to be 500W, the RF power is set to be 100W, the pressure of the reaction chamber is 10mTorr, the temperature is 25 ℃, and the etching time is 30min.
And (3) processing results: under the femtosecond laser processing parameters and the ICP etching parameters of embodiment 3, the gallium nitride material around the micropore structure processed by the femtosecond laser is removed by ICP etching to form a small pit structure.
Claims (1)
1. A method for processing gallium nitride by femtosecond laser-assisted dry etching is characterized in that: the method comprises the following specific steps:
step one, building a femtosecond laser micromachining system, selecting femtosecond laser with the central wavelength of 800nm, the repetition frequency of 1kHz and the pulse width of 30fs, and focusing the femtosecond laser on the surface of a gallium nitride sample fixed on a three-dimensional translation table through an objective with the numerical aperture of 0.5;
regulating and controlling the number of pulses of the femtosecond laser acted on the surface of the gallium nitride to be 1000, wherein the pulse energy is 8mW, and the processing point interval is 20 mu m;
step three, ultrasonically cleaning the femtosecond laser processed gallium nitride sample in acetone, ethanol and deionized water for 5 minutes respectively, and removing particles generated by laser ablation and scattered on the surface of the sample;
step four, placing the cleaned sample in an etching cavity of an inductively coupled plasma etching system in Cl 2 And BCl 3 By controlling the etching parameters under the plasma environment of the mixed gas,realizing dry etching processing of the gallium nitride material microstructure;
step five, ultrasonically cleaning the etched gallium nitride in acetone, ethanol and deionized water for 5 minutes respectively to obtain a sample with a microstructure array; the specific processing parameters of the ICP dry etching are as follows: the total flow of the gas is regulated and controlled to be 35sccm 2 The gas flow rate was 10sccm, BCl 3 The gas flow of (2) is 25sccm; setting the ICP power of ICP dry etching to 500W, the RF power to 100W, the pressure of a reaction chamber to 10mTorr, the temperature to 25 ℃ and the etching time to 40min; gallium nitride materials around the micropore structure processed by the femtosecond laser are removed by ICP etching to form a small boss structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011489533.2A CN112719607B (en) | 2020-12-16 | 2020-12-16 | Method for processing gallium nitride by femtosecond laser dry etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011489533.2A CN112719607B (en) | 2020-12-16 | 2020-12-16 | Method for processing gallium nitride by femtosecond laser dry etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112719607A CN112719607A (en) | 2021-04-30 |
| CN112719607B true CN112719607B (en) | 2023-02-03 |
Family
ID=75602493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011489533.2A Active CN112719607B (en) | 2020-12-16 | 2020-12-16 | Method for processing gallium nitride by femtosecond laser dry etching |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112719607B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114273790B (en) * | 2022-02-15 | 2023-07-28 | 山东大学 | Femtosecond laser processing device and method for etching gallium nitride in liquid phase |
| CN115894090B (en) * | 2022-11-17 | 2024-03-22 | 中国工程物理研究院激光聚变研究中心 | Method for preparing high-reflection-resistance sub-wavelength structure on surface of brittle and hard material |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1272835C (en) * | 2003-09-19 | 2006-08-30 | 清华大学 | Dry etching method for gallium nitride materials |
| CN100421272C (en) * | 2005-06-14 | 2008-09-24 | 中国科学院半导体研究所 | Method for making GaN-based blue light light-emitting diode with photon microstructure |
| CN102110749B (en) * | 2010-11-15 | 2012-06-27 | 山东大学 | Coarsening and etching method of large-area controllable surface of SiC substrate light emitting diode (LED) based on laser |
| CN107799467B (en) * | 2016-08-30 | 2021-01-29 | 上海新昇半导体科技有限公司 | Etching method, etching device and semiconductor wafer segmentation method |
| CN106981543B (en) * | 2017-04-05 | 2018-05-22 | 中国电子科技集团公司第四十四研究所 | The method that black silicon layer is prepared using al-si eutectic film auxiliary dry etching |
| CN108962741A (en) * | 2017-05-23 | 2018-12-07 | 北京北方华创微电子装备有限公司 | A kind of lithographic method |
| CN110208906A (en) * | 2019-05-21 | 2019-09-06 | 中国科学院上海光学精密机械研究所 | A kind of preparation method of the film micro optical structure based on reactive ion etching |
-
2020
- 2020-12-16 CN CN202011489533.2A patent/CN112719607B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN112719607A (en) | 2021-04-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112719607B (en) | Method for processing gallium nitride by femtosecond laser dry etching | |
| CN109551123B (en) | Method for realizing preparation of microfluidic device by inducing cracks in quartz glass through picosecond laser | |
| CN110385521B (en) | Femtosecond laser processing device and method for silicon carbide rapid deep etching | |
| TWI692457B (en) | Method for introducing at least one recess into a material by means of electromagnetic radiation and a subsequent etching process | |
| CN109277692B (en) | Femtosecond laser double-pulse regulation and control method for polydimethylsiloxane surface micro-nano structure | |
| CN103706955A (en) | Method for preparing high depth-diameter-ratio three-dimensional micro-channel through electronic dynamic control | |
| CN108015410A (en) | One kind is based on femtosecond laser induction amorphous gemSbnTekThe method of film preparation crystalline state nanostructured | |
| CN102092931A (en) | Method and device for preparing microchannel in glass material | |
| CN112192325B (en) | Method for machining micro-nano scale through hole in transparent hard and brittle material by femtosecond laser | |
| CN109128512B (en) | Micro-nano self-organizing structure prepared on surface of stainless steel and preparation method | |
| CN110508932B (en) | Method for processing microstructure array on gallium nitride surface by femtosecond laser wet etching | |
| CN107088703A (en) | Oval lenticule processing method based on dynamic control and chemical auxiliary etch | |
| CN109822222A (en) | A method of dimple lens array is quickly prepared using low pulse energy femtosecond laser | |
| CN112372162B (en) | Method for preparing millimeter-scale deep micropores of quartz glass by using femtosecond laser filament effect | |
| CN108031969A (en) | A kind of micro-nano channel production method and device | |
| CN106129183B (en) | One kind improves gallium arsenide solar cell photoelectric transformation efficiency method | |
| Kam et al. | Three-dimensional biomimetic microchannel network by laser direct writing | |
| CN107971645A (en) | Quaternary LED wafer is exempted to coat laser surface cutter device and its method | |
| CN112591707B (en) | Nanometer conical array structure and preparation method thereof | |
| CN110744206B (en) | Ultraviolet nanosecond laser direct-writing microfluidic chip preparation system and method | |
| CN113247859B (en) | Method for preparing crack type nano gap structure based on femtosecond laser | |
| CN115894090B (en) | Method for preparing high-reflection-resistance sub-wavelength structure on surface of brittle and hard material | |
| CN212443755U (en) | Transparent glass internally dazzles colored sculpture device | |
| CN105537782A (en) | Method for making controllable curved holes through femtosecond lasers with assistance of electric field | |
| CN204918746U (en) | Device is implanted to cavitation based on focus of laser induction shock wave |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |