CN106129183B - One kind improves gallium arsenide solar cell photoelectric transformation efficiency method - Google Patents
One kind improves gallium arsenide solar cell photoelectric transformation efficiency method Download PDFInfo
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- CN106129183B CN106129183B CN201610649086.XA CN201610649086A CN106129183B CN 106129183 B CN106129183 B CN 106129183B CN 201610649086 A CN201610649086 A CN 201610649086A CN 106129183 B CN106129183 B CN 106129183B
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 16
- 230000009466 transformation Effects 0.000 title claims abstract description 14
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims description 25
- 238000002310 reflectometry Methods 0.000 claims abstract description 14
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 16
- 239000002086 nanomaterial Substances 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000003570 air Substances 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 15
- 238000012545 processing Methods 0.000 description 13
- 239000011888 foil Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002389 environmental scanning electron microscopy Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000002110 nanocone Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention belongs to technical field of solar batteries, and in particular to one kind femtosecond laser prepares micro-nano antireflection structure in battery surface, so as to improve the method for the photoelectric transformation efficiency of solar cell.Using femtosecond laser, in different surrounding mediums, GaAs battery surfaces are irradiated, by selecting corresponding laser single-pulse energy, different micro-nano antireflection structures are obtained in GaAs battery surfaces, so as to reduce the reflectivity of GaAs battery surfaces, the photoelectric transformation efficiency of GaAs batteries are improved.
Description
Technical field
The invention belongs to technical field of solar batteries, and in particular to one kind prepares micro-nano with femtosecond laser in battery surface
Rice antireflection structure, so as to improve the method for the photoelectric transformation efficiency of solar cell.
Background technology
GaAs solar cells are as the representative in III-V race's semi-conductor cell, compared with silicon solar cell, except it
Outside with higher photoelectric transformation efficiency, also with preferable resistance to elevated temperatures, stronger radiation resistance etc..These excellent property
GaAs solar cells can be made to be highly suitable as Space power sources battery, but be due to current Development Level and technological problemses,
The space so that photoelectric transformation efficiency of GaAs solar cells still has greatly improved, and improve the photoelectricity of GaAs solar cells
One of topmost method of conversion efficiency is exactly to improve the antireflective property of GaAs battery surfaces.
Kyoung Seok Cho, P.Mandal etc. prepare GaAs battery surfaces using the Laser lithography of low cost
It is one-dimensional with two-dimentional micro nano structure, and effectively raise the photoelectric transformation efficiency of battery.F.C.Marques is sprayed using solution
Coating is by SnCl4It is sprayed on silicon solar energy battery surface formation pyramid structure.And Yangsen Kang team then uses ECR
Plasma etching, wet chemical etch and metallo-organic compound chemical vapor infiltration (MOCVD) are in figure well prepared in advance
The nanocone array of rule is successfully produced on the GaAs solar cell masterplates of case, although this several method can realize photoelectricity
The raising of conversion efficiency, but do not produce a desired effect also.As Laser lithography easily cause battery surface damage, and efficiency compared with
It is low；Micro-structural, which is prepared, as chemical method then easily causes pollution, and GaAs high stability make it that the pattern of generation is not easily-controllable
System.
The content of the invention
It is an object of the invention to provide the gallium arsenide solar cell antireflection structure based on femtosecond laser and preparation method.
To achieve these goals, the technical scheme is that：
Using femtosecond laser, in different surrounding mediums, GaAs battery surfaces are irradiated, by selecting corresponding laser list
Pulse energy, different micro-nano antireflection structures are obtained in GaAs battery surfaces, so that the reflectivity of GaAs battery surfaces is reduced,
Improve the photoelectric transformation efficiency of GaAs batteries.
Further, in the different surrounding medium it is air, ethanol or water, order preferably is water, ethanol, sky
Gas；The pulsewidth of femto-second laser is 120fs, and centre wavelength 700nm, frequency is 1KHz；Laser processing parameter is that sweep speed is
2.2mm/s, sweep span is 30 μm.
Further, in water, when laser single-pulse energy is 15 μ J, obtained micro nano structure is conical structure,
The basal diameter size of circular cone is 1 μm, and the structure can be by the reflectivity of battery surface by original in 300-2000nm wave bands
Average out to 22.5% is reduced to 3%.
Further, in ethanol, when laser single-pulse energy is 15 μ J, obtained micro nano structure is wavy micro-
The reflectivity of battery surface can be reduced to by structure, the structure in 300-1000nm wave bands by original average out to 22.5%
17.3%.
Further, in atmosphere, when laser single-pulse energy is 30 μ J, the micro nano structure of preparation is one-dimensional rectangle
The reflectivity of battery surface can be reduced to by optical grating construction, the structure in 300-1000nm wave bands by original average out to 33%
23.6%.
This method using amplifying stage titanium sapphire fs-laser system (Legend Elite-1K-HE, Coherent,
America) reflecting layer GaAs battery surfaces (The 18th Research Institute of China are not added and subtracted in irradiation
Electronic Technology Group Co.,Ltd.,China)；Experimental provision is as shown in figure 1, pulse power can lead to
Cross using the combination unit of a half-wave plate and Glan-Taylor prism constantly to adjust；The direction of laser linear polarization and wavelength point
Line translation is not entered by Glan-Taylor prism and optical parametric amplifier；Laser beam is gathered by the planoconvex spotlight of 50mm focal lengths
It is burnt；Cell foil is arranged on the linear moving table that high precision computation machine is controlled, can be by changing horizontal shifting platform
Translational speed in the X direction obtains a series of different hot spot overlapping rates.
The invention has the advantages that：
1. machining damage is small.The ultrashort laser pulses pulse duration is short, and energy is complete in Minimum-time and space
Into the interaction with material.To end since processing, heat has little time diffusion, and energy is only accumulated in material tiny area
In thin layer.After machining, the material around damage field is still in " cold " state, and the damage to cell foil is smaller.
2. machining accuracy is high.Gaussian or class Gaussian shaped profile is all presented in femtosecond laser energy on room and time.This
The intensity in only focal beam spot centre can be caused to can reach the processing threshold value of material, now process in energy absorption with
Sphere of action is restricted at focus center in very small volume, and processing yardstick is much smaller than spot size, reaches submicron order even
Nanoscale.
3. preparation method technique is superior.Using the inventive method, it is not necessary to other aided processes, it can just obtain periodically
Micro nano structure, and anti-reflection effect is clearly.
Brief description of the drawings
Fig. 1 is the index path of femtosecond laser processing method.
Wherein, 1- femto-second lasers, 2- optical parametric amplifiers, 3- Glan-Taylor prisms, 4- half-wave plates, 5- first reflects
Mirror, the speculums of 6- second, 7- dichroscopes, 8- planoconvex spotlights, 9- samples, 10- mobile platforms, 11- mobile platform control systems,
12- white light sources, the speculums of 13- the 3rd, 14-CCD.
The scanning electron microscope diagram of battery surface structure in Fig. 2 embodiments one.
Battery surface structure reflectance curve in Fig. 3 embodiments one.
The scanning electron microscope diagram of battery surface structure in Fig. 4 embodiments two.
Battery surface structure reflectance curve in Fig. 5 embodiments two.
The scanning electron microscope diagram of battery surface structure in Fig. 6 embodiments three.
Battery surface structure reflectance curve in Fig. 7 example IVs.
Embodiment
The present invention is described in detail with reference to the accompanying drawings and examples.
Embodiment 1
1. build femtosecond laser processing platform.Using amplifying stage titanium sapphire fs-laser system (Legend Elite-
1K-HE, Coherent, America) to irradiate and do not add and subtract reflecting layer GaAs battery surfaces, femtosecond laser pulsewidth is 120fs, center
Wavelength 700nm, frequency is 1KHz.Experimental provision is as shown in Figure 1.Pulse power can be safe by using a half-wave plate and Glan
The combination unit of prism is strangled constantly to adjust.The direction of laser linear polarization and wavelength pass through Glan-Taylor prism and optics respectively
Parameter amplifier enters line translation.Laser beam is focused by the planoconvex spotlight of 50mm focal lengths, and a diameter of about 22 μm of focal spot.
Cell foil is arranged on the mobile platform that high precision computation machine is controlled.Can be by changing mobile platform in the X direction
Translational speed obtains a series of different hot spot overlapping rates.
2. prepare micro-nano antireflection structure.Using above-mentioned femtosecond laser system of processing in water environment to GaAs cell foils
It is processed；The laser processing parameter of selection is：Single pulse energy is 15 μ J, and sweep speed is 2.2mm/s, and sweep span is 30
μm, processing environment is water.
The solar cell surface of resulting femtosecond laser processing with SEM (ESEM, JSM-6700F,
JEOL, Tokyo, Japan), solar spectrum reflectivity instrument (SOLID3700, Shimadzu, Japan) characterized, as a result
See Fig. 2~3.
From Figure 2 it can be seen that obtained micro nano structure is conical structure in water, the bottom diameter of " circular cone " is 1 μm；By
Fig. 3 is visible, and the reflectivity of battery surface can be reduced to by the structure in 300-2000nm wave bands by original average out to 33%
3%.
Embodiment 2
In the step 2 of embodiment 1, laser processing parameter is changed to：Single pulse energy is 15 μ J, and sweep speed is
2.2mm/s, sweep span is 30 μm, and processing environment is ethanol.
From fig. 4, it can be seen that obtained micro nano structure is a kind of similar wavy micro-structural in ethanol, one is laminated one
Layer；As seen from Figure 5, the structure can be by the reflectivity of battery surface by original average out to 22.5% in 300-2000nm wave bands
It is reduced to 17.3%.
Embodiment 3
In the step 2 of embodiment 1, laser processing parameter is changed to：Single pulse energy is 30 μ J, and sweep speed is
2.2mm/s, sweep span is 30 μm, and processing environment is air.
As seen from Figure 6, obtained micro nano structure is rectangular raster structure, a width of 600nm of rectangle, cycle in atmosphere
For 700nm；As seen from Figure 7, the structure can be by the reflectivity of battery surface by original average out in 300-1000nm wave bands
33% is reduced to 23.6%.
Claims (4)
1. one kind improves gallium arsenide solar cell photoelectric transformation efficiency method, it is characterised in that：Using femtosecond laser, in difference
Surrounding medium in, the GaAs battery surfaces in reflecting layer are not added and subtracted in irradiation, by selecting corresponding laser single-pulse energy,
GaAs battery surfaces obtain different micro-nano antireflection structures, so as to reduce the reflectivity of GaAs battery surfaces, improve GaAs electricity
The photoelectric transformation efficiency in pond；It is air, ethanol or water in the different surrounding medium, according to the reflectivity of reduction battery surface
The order of amplitude is water, ethanol, air；The pulsewidth of femto-second laser is 120fs, and centre wavelength 700nm, frequency is 1KHz；Swash
Light machined parameters are that sweep speed is 2.2mm/s, and sweep span is 30 μm.
2. a kind of raising gallium arsenide solar cell photoelectric transformation efficiency method as claimed in claim 1, it is characterised in that：When
Surrounding medium is water, when laser single-pulse energy is 15 μ J, and obtained micro nano structure is conical structure, the basal diameter of circular cone
Size is 1 μm, and the structure can be dropped the reflectivity of battery surface by original average out to 22.5% in 300-2000nm wave bands
It is low to 3%.
3. a kind of raising gallium arsenide solar cell photoelectric transformation efficiency method as claimed in claim 1, it is characterised in that：When
Surrounding medium is ethanol, when laser single-pulse energy is 15 μ J, and obtained micro nano structure is wavy micro-structural, and the structure exists
The reflectivity of battery surface by original average out to 22.5% can be reduced to 17.3% by 300-1000nm wave bands.
4. a kind of raising gallium arsenide solar cell photoelectric transformation efficiency method as claimed in claim 1, it is characterised in that：When
Surrounding medium is air, when laser single-pulse energy is 30 μ J, and the micro nano structure of preparation is one-dimensional rectangular raster structure, the knot
The reflectivity of battery surface by original average out to 33% can be reduced to 23.6% by structure in 300-1000nm wave bands.
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| CN110534652B (en) * | 2019-09-10 | 2021-04-02 | 西北工业大学 | Perovskite solar cell and preparation method thereof |
| CN113178494A (en) * | 2021-03-08 | 2021-07-27 | 江苏大学 | Method for improving photoelectric conversion efficiency of gallium arsenide solar cell |
| CN114373866B (en) * | 2021-12-14 | 2023-08-22 | 华南理工大学 | GaAs nano cone Schottky junction solar cell and preparation method thereof |
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