CN105855710B - A kind of method of manufacturing cycle structure on ito thin film based on Au inductions - Google Patents

A kind of method of manufacturing cycle structure on ito thin film based on Au inductions Download PDF

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Publication number
CN105855710B
CN105855710B CN201610312233.4A CN201610312233A CN105855710B CN 105855710 B CN105855710 B CN 105855710B CN 201610312233 A CN201610312233 A CN 201610312233A CN 105855710 B CN105855710 B CN 105855710B
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films
thin film
laser
ito
ito thin
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CN105855710A (en
Inventor
王文君
杨慧著
姜歌东
梅雪松
潘爱飞
赵万芹
翟兆阳
孙学峰
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Xian Jiaotong University
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Xian Jiaotong University
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0643Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/361Removing material for deburring or mechanical trimming
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

A kind of method of manufacturing cycle structure on ito thin film based on Au inductions, ITO conductive films are first sputtered on the glass substrate, Au films are sputtered on ITO conductive films surface, substrate of glass is fixed on three coordinate setting tables again, three coordinate setting tables and processing light path system coordinate, adjust the output laser parameter of picosecond laser, irradiate Au films and ito thin film, three coordinate setting tables are set vertically to movement velocity, after reaching setting position, water moves flat, after vertically being moved to opposite direction, so repeatedly, machining path is the end to end line segment of a rule, so as to produce uniform large area cycle ripple struction, the structure that the present invention makes improves the generating efficiency of thin-film solar cells.

Description

A kind of method of manufacturing cycle structure on ito thin film based on Au inductions
Technical field
The invention belongs to micro-fabrication technology field, and in particular to manufacturing cycle knot on a kind of ito thin film based on Au inductions The method of structure.
Background technology
In recent years, ito thin film technology is applied to novel solar battery manufacturing field, turns into solar battery technology hair One Main way of exhibition.And the periodic structure of large area is made on ITO surfaces, thus it is possible to vary the light transmittance of film, so as to carry Rise the generating efficiency of solar cell.As ultrafast processing method, irradiating can produce picosecond laser on thin-film material top layer The uniform periodicity structure of large area, so as to change film performance, but because ito thin film material translucency is strong, need larger work( The laser action of rate, and the energy of picosecond laser light beam is in Gaussian Profile, film center section is easily ablated, nanometer wave occurs Line is destroyed, and is produced defect, so as to reduce ito thin film electric conductivity, is influenceed solar cell power generation.
The content of the invention
The shortcomings that in order to overcome above-mentioned prior art, it is an object of the invention to provide a kind of ito thin film based on Au inductions The method of upper manufacturing cycle structure, uniformly complete surface period structure is generated on ITO, so as to lift thin-film solar cells Generating efficiency.
To achieve these goals, the technical scheme taken of the present invention is:
The method of manufacturing cycle structure, comprises the following steps on a kind of ito thin film based on Au inductions:
1) the thick ITO conductive films 2 of one layer of 240nm are first sputtered in substrate of glass 1, then on the surface of ITO conductive films 2 Au the films 3 thick uniform 20nm of one layer of sputtering;
2) substrate of glass 1 of Au films 3 and ITO conductive films 2 is fixed on three coordinate setting tables 4 sputtering, three coordinates Workbench 4 and processing light path system coordinate, and processing light path system includes picosecond laser 6, the laser warp that picosecond laser 6 exports Speculum 7 reflect after, then successively after shutter 8, aperture 9, condenser lens 10 can vertical irradiation on Au films 3, skin Second laser 6, the coordinate setting table 4 of shutter 8 and three are controlled by being connected with computer 5;
3) Output of laser wavelength for first adjusting picosecond laser 6 is 532nm, repetition 1KHz, pulsewidth 10ps, then makes laser work( Rate adjusts light hole between 1-3mw, by aperture 9, and shutter 8 controls the progress of process, then is by focal length 200mm condenser lens 10 focuses on light beam;
4) the Au films 3 and ito thin film 2 in the picosecond laser irradiation substrate of glass 1 regulated, setting three coordinates work are utilized Platform 4 is vertically 0.05-3mm/s to movement velocity, reach setting position after, water moves flat 50 μm, after vertically to negative side To motion, so repeatedly, machining path is the end to end line segment of a rule, so as to produce uniform large area cycle ripple Structure.
Beneficial effects of the present invention are:Laser is irradiated on Au films 3 first, reduces transmitance of the material to light, simultaneously Absorb unnecessary energy;The removal ablated first of Au films 3, and the Au films 3 of even surface roughness can be uniform with induced synthesis Initial nanometer ripple, so as to ensure to generate uniformly complete surface period structure on ITO conductive films under less energy, Improve the generating efficiency of thin-film solar cells.
Brief description of the drawings
Fig. 1 is that Au films 3, ITO conductive films 2, substrate of glass 1 are distributed and processed relative position schematic diagram in embodiment.
Fig. 2 is the processing light path system schematic diagram in embodiment.
Fig. 3 is to form nanometer ripple struction on ITO conductive films 2 after vertically laser irradiation material in embodiment 1, Au films 3 are removed by complete ablation.
Fig. 4 is that laser irradiates Au films 3 by after complete ablation removal in embodiment 1, is formed on ITO conductive films 2 uniform Large area ripple struction.
Fig. 5 is that laser irradiates Au films 3 by after complete ablation removal in embodiment 2, is formed on ITO conductive films 2 uniform Large area ripple struction.
Fig. 6 is that laser irradiates Au films 3 by after complete ablation removal in embodiment 3, is formed on ITO conductive films 2 uniform Large area ripple struction.
Embodiment
The present invention is described in detail with reference to the accompanying drawings and examples.
Embodiment 1
The method of manufacturing cycle structure, comprises the following steps on a kind of ito thin film based on Au inductions:
1) the thick ITO conductive films 2 of one layer of 240nm are first sputtered in substrate of glass 1, then on the surface of ITO conductive films 2 Au the films 3 thick uniform 20nm of one layer of sputtering, as shown in Figure 1;
2) substrate of glass 1 of Au films 3 and ITO conductive films 2 is fixed on three coordinate setting tables 4 sputtering, three coordinates Workbench 4 and processing light path system coordinate, and processing light path system includes picosecond laser 6, the laser warp that picosecond laser 6 exports Speculum 7 reflect after, then successively after shutter 8, aperture 9, condenser lens 10 can vertical irradiation on Au films 3, skin Second laser 6, the coordinate setting table 4 of shutter 8 and three are controlled by being connected with computer 5;
3) Output of laser wavelength for first adjusting picosecond laser 6 is 532nm, repetition 1KHz, pulsewidth 10ps, then makes laser work( Rate is 1.5mw, and light hole is adjusted by aperture 9, and shutter 8 controls the progress of process, then by focal length is 200mm Condenser lens 10 focuses on light beam, as shown in Figure 2;
4) the Au films 3 and ito thin film 2 in the picosecond laser irradiation substrate of glass 1 regulated, setting three coordinates work are utilized Platform 4 is vertically 1mm/s to movement velocity, reach setting position after, water moves flat 50 μm, after vertically to opposite direction transport Dynamic, so repeatedly, machining path is the end to end line segment of a rule, so as to produce uniform large area cycle ripple knot Structure.
As shown in Figure 3 and Figure 4, Fig. 3 is that vertically laser is irradiated after material on ITO conductive films 2 in the present embodiment Periodic nanometer ripple struction is formed, Au films 3 are removed by complete ablation;Fig. 4 is that laser irradiation Au films 3 are burnt completely in embodiment After etching off removes, uniform large area ripple struction is formed on ITO conductive films 2.
Embodiment 2
The method of manufacturing cycle structure, comprises the following steps on a kind of ito thin film based on Au inductions:
1) the thick ITO conductive films 2 of one layer of 240nm are first sputtered in substrate of glass 1, then on the surface of ITO conductive films 2 Au the films 3 thick uniform 20nm of one layer of sputtering, as shown in Figure 1;
2) substrate of glass 1 of Au films 3 and ITO conductive films 2 is fixed on three coordinate setting tables 4 sputtering, three coordinates Workbench 4 and processing light path system coordinate, and processing light path system includes picosecond laser 6, the laser warp that picosecond laser 6 exports Speculum 7 reflect after, then successively after shutter 8, aperture 9, condenser lens 10 can vertical irradiation on Au films 3, skin Second laser 6, the coordinate setting table 4 of shutter 8 and three are controlled by being connected with computer 5;
3) Output of laser wavelength for first adjusting picosecond laser 6 is 532nm, repetition 1KHz, pulsewidth 10ps, then makes laser work( Rate is 1mw, adjusts light hole by aperture 9, shutter 8 controls the progress of process, then the gathering for 200mm by focal length Focus lens 10 focus on light beam, as shown in Figure 2;
4) the Au films 3 and ito thin film 2 in the picosecond laser irradiation substrate of glass 1 regulated, setting three coordinates work are utilized Platform 4 is vertically 0.05mm/s to movement velocity, reach setting position after, water moves flat 50 μm, after vertically to opposite direction Motion, so repeatedly, machining path are the end to end line segment of a rule, so as to produce uniform large area cycle ripple knot Structure.
As shown in figure 5, after Fig. 5 is laser irradiation Au films 3 is removed by complete ablation in embodiment 2, on ITO conductive films 2 Form uniform large area ripple struction.
Embodiment 3
The method of manufacturing cycle structure, comprises the following steps on a kind of ito thin film based on Au inductions:
1) the thick ITO conductive films 2 of one layer of 240nm are first sputtered in substrate of glass 1, then on the surface of ITO conductive films 2 Au the films 3 thick uniform 20nm of one layer of sputtering, as shown in Figure 1;
2) substrate of glass 1 of Au films 3 and ITO conductive films 2 is fixed on three coordinate setting tables 4 sputtering, three coordinates Workbench 4 and processing light path system coordinate, and processing light path system includes picosecond laser 6, the laser warp that picosecond laser 6 exports Speculum 7 reflect after, then successively after shutter 8, aperture 9, condenser lens 10 can vertical irradiation on Au films 3, skin Second laser 6, the coordinate setting table 4 of shutter 8 and three are controlled by being connected with computer 5;
3) Output of laser wavelength for first adjusting picosecond laser 6 is 532nm, repetition 1KHz, pulsewidth 10ps, then makes laser work( Rate is 3mw, adjusts light hole by aperture 9, shutter 8 controls the progress of process, then the gathering for 200mm by focal length Focus lens 10 focus on light beam, as shown in Figure 2;
4) the Au films 3 and ito thin film 2 in the picosecond laser irradiation substrate of glass 1 regulated, setting three coordinates work are utilized Platform 4 is vertically 3mm/s to movement velocity, reach setting position after, water moves flat 50 μm, after vertically to opposite direction transport Dynamic, so repeatedly, machining path is the end to end line segment of a rule, so as to produce uniform large area cycle ripple knot Structure.
As shown in fig. 6, after Fig. 6 is laser irradiation Au films 3 is removed by complete ablation in embodiment 3, on ITO conductive films 2 Form uniform large area ripple struction.

Claims (4)

1. a kind of method of manufacturing cycle structure on ito thin film based on Au inductions, it is characterised in that comprise the following steps:
1) the thick ITO conductive films (2) of one layer of 240nm are first sputtered in substrate of glass (1), then in ITO conductive films (2) table Face sputters one layer of thick Au film (3) of uniform 20nm;
2) substrate of glass (1) that sputtering has Au films (3) and ITO conductive films (2) is fixed on three coordinate setting tables (4), three Coordinate setting table (4) and processing light path system coordinate, and processing light path system includes picosecond laser (6), and picosecond laser (6) is defeated The laser gone out is after speculum (7) reflection, then can be hung down after (10) by shutter (8), aperture (9), condenser lens successively Directly it is radiated on Au films (3), picosecond laser (6), shutter (8) and three coordinate setting tables (4) with computer (5) by being connected It is controlled;
3) Output of laser wavelength for first adjusting picosecond laser (6) is 532nm, repetition 1KHz, pulsewidth 10ps, then makes laser power Between 1-3mw, light hole is adjusted by aperture (9), shutter (8) controls the progress of process, then is by focal length 200mm condenser lens (10) focuses on light beam;
4) using the Au films (3) and ito thin film (2) in the picosecond laser irradiation substrate of glass (1) regulated, three coordinate works are set It is vertically 0.05-3mm/s to movement velocity to make platform (4), reach setting position after, water moves flat 50 μm, after vertically to Opposite direction is moved, and so repeatedly, machining path is the end to end line segment of a rule, so as to produce the uniform large area cycle Ripple struction.
2. according to the method for manufacturing cycle structure on a kind of ito thin film induced based on Au of claim 1, it is characterised in that:Institute Laser power is 1.5mw in the step 3) stated, and three coordinate setting tables (4) are vertically 1mm/s to movement velocity in step 4).
3. according to the method for manufacturing cycle structure on a kind of ito thin film induced based on Au of claim 1, it is characterised in that:Institute Laser power is 1mw in the step 3) stated, and three coordinate setting tables (4) are vertically 0.05mm/s to movement velocity in step 4).
4. according to the method for manufacturing cycle structure on a kind of ito thin film induced based on Au of claim 1, it is characterised in that:Institute Laser power is 3mw in the step 3) stated, and three coordinate setting tables (4) are vertically 3mm/s to movement velocity in step 4).
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CN107498183B (en) * 2017-07-17 2019-11-08 西安交通大学 A method of preparation large area periodic structure is induced with linear light spot
CN109108485B (en) * 2018-07-24 2020-07-10 西安交通大学 Method for repairing aluminum oxide ceramic core with complex structure by using picosecond laser

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CN1448755A (en) * 2003-05-09 2003-10-15 中国科学院上海光学精密机械研究所 Method for preparing periodic microstructure on metallic film by femto second laser
CN1709689A (en) * 2005-07-15 2005-12-21 深圳市豪威光电子设备有限公司 ITo coated plate and its preparing method
CN100535729C (en) * 2006-09-15 2009-09-02 江苏大学 Big area laser modeling method and device for bionic periodic micro-nano structure surface
CN102528276B (en) * 2012-03-02 2015-03-04 江苏大学 Laser-assisted surface treatment method for increasing light transmittance of TCO film
CN104681662A (en) * 2013-12-02 2015-06-03 青岛事百嘉电子科技有限公司 Preparation method of high-reflectivity solar film
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