CN112701162A - Structure of MOSFET device based on diamond substrate and preparation method thereof - Google Patents
Structure of MOSFET device based on diamond substrate and preparation method thereof Download PDFInfo
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- CN112701162A CN112701162A CN202011592523.1A CN202011592523A CN112701162A CN 112701162 A CN112701162 A CN 112701162A CN 202011592523 A CN202011592523 A CN 202011592523A CN 112701162 A CN112701162 A CN 112701162A
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Abstract
The invention discloses a structure of a MOSFET device based on a diamond substrate and a preparation method thereof, belonging to the technical field of microelectronics, comprising the diamond substrate, hydrogen terminal layers arranged at the upper end and the lower end of the diamond substrate, a source electrode and a drain electrode respectively arranged at the two sides of the diamond substrate, a gate dielectric layer arranged on the surface of the hydrogen terminal layer and a gate electrode arranged on the surface of the gate dielectric layer.
Description
Technical Field
The invention belongs to the technical field of microelectronics, and particularly relates to a structure of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) device based on a diamond substrate and a preparation method thereof.
Background
Diamond is called as the final material in semiconductor materials, and has excellent properties such as wide forbidden band, high breakdown electric field, high frequency, high temperature resistance and the like. The single crystal diamond and hydrogen gas form hydrogen terminal on the surface of diamond, and the structure can obtain more than 4500cm at room temperature2Electron mobility of/Vs, and up to 1.5 × 107Saturated electron velocity of cm/s and up to 10 can be obtained12-1014cm-2The two-dimensional cavity air density of the porous material is as high as about 5.5eVThe forbidden band width of the diamond enables the diamond to have good breakdown resistance, and the highest breakdown field strength of the diamond can reach 10MV/cm, which is about 3.3 times that of GaN and about 33 times that of Si. Besides high breakdown electric field, the thermal conductivity of diamond is high, reaches 2200W/m.K, and has good heat dissipation. This shows that diamond is a potential ideal material for manufacturing high-temperature and high-pressure devices.
Although the research on diamond-based devices has been greatly advanced, the advantages of the diamond-based devices are not fully realized due to the insufficient quality of the diamond material obtained. Because the diamond single crystal is difficult to prepare, the diamond film is mainly obtained on the single crystal diamond substrate through homoepitaxy at present, and the prepared diamond-based MOSFET device has the defects in the aspects of maximum saturation current, transconductance, on-off ratio, output resistance, cut-off frequency and the like.
Disclosure of Invention
The invention aims to overcome the problems, and provides a horizontal double-gate device structure based on a hydrogen terminal diamond device and a manufacturing method thereof from the optimization angle of the device structure aiming at the gate structure of the diamond device and improving the gate control capability of the device gate, so that the basic performance of the device is optimized under the same material and process.
The device structure comprises a diamond substrate, hydrogen terminal layers arranged at the upper end and the lower end of the diamond substrate, a source electrode and a drain electrode which are respectively arranged at the two sides of the diamond substrate, a gate dielectric layer arranged on the surface of the hydrogen terminal layer and a gate electrode arranged on the surface of the gate dielectric layer.
Preferably, the diamond substrate is formed by homoepitaxy of diamond in an MPCVD apparatus, using H during growth2And CH4Mixed gas of (2), wherein CH4The proportion of (A) is 3-7%.
Preferably, the hydrogen termination layer is formed by placing the diamond substrate in an MPCVD cavity and treating the diamond substrate with hydrogen plasma for 10min by adopting an MPCVD technology;
the temperature during the treatment is 700 ℃ to 900 ℃, a surface adsorption layer is formed, and the energy band is bent to form cavity accumulation.
Preferably, the source electrode and the drain electrode are formed by depositing 100nm Au on two sides of the diamond substrate to form ohmic contact with the surface of the diamond substrate.
Preferably, the gate electrode is a conventional schottky contact or a metal-dielectric layer-semiconductor structure.
Preferably, the gate dielectric layer is Al2O3A film material.
Preferably, the diamond substrate is single crystal diamond.
A preparation method of a structure of a MOSFET device based on a diamond substrate comprises the following steps:
s1: taking colorless single crystal diamond grown by MPCVD as a substrate, respectively exposing the upper surface and the lower surface of the diamond substrate in hydrogen plasma for 5-15min at the temperature of 700-900 ℃ to form a hydrogen terminal layer, wherein the hydrogen flow rate is 450-550 sccm;
s2: depositing a layer of Au with the thickness of 50-150nm on two sides of the diamond substrate with the hydrogen terminal layer by electron beam evaporation, and forming ohmic contact with the surface of the diamond substrate to be used as a source electrode and a drain electrode;
s3: depositing Al with a thickness of 4nm on the upper and lower surfaces of the sample obtained in the previous step, and annealing at 70-90 deg.C for 25-35min to form Al with a thickness of 3-10nm2O3As a gate dielectric layer;
s4: and finally, depositing 90-110nm of Al on the surface of the gate dielectric layer, and stripping to form a gate electrode to finish the preparation of the device.
Compared with the prior art, the invention has the following advantages:
the device is a diamond-based MOSFET (metal-oxide semiconductor field effect transistor) device, and the double-gate diamond device formed by the method can improve the maximum saturation current and transconductance of the diamond device under the condition of keeping the threshold voltage basically unchanged, improves the switching ratio of the device by nearly 3 orders of magnitude, reduces the output resistance of the device, greatly improves the cut-off frequency of the diamond device, and has the characteristics of simple manufacturing process and good repeatability; meanwhile, the composite material is combined with the original high breakdown voltage, high current density and excellent pinch-off characteristics of a diamond device, and is suitable for the fields of high-voltage high-power electronic devices, radio-frequency microwave power devices and the like.
Drawings
Fig. 1 is a schematic structural diagram of a structure of a MOSFET device based on a diamond substrate according to an embodiment of the present invention.
Figure 2 is a graph of the transfer characteristics of single-gate and double-gate hydrogen-terminated diamond devices.
Figure 3 shows the cut-off frequency and maximum oscillation frequency of single-gate and double-gate hydrogen-terminated diamond devices.
Wherein: 101-diamond substrate, 102-hydrogen terminal layer, 103-source electrode, 104-drain electrode, 105-gate dielectric layer, 106-gate electrode.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further described with the specific embodiments.
The embodiment provides a structure of a MOSFET device based on a diamond substrate, which comprises the diamond substrate 101, hydrogen terminal layers 102 arranged at the upper end and the lower end of the diamond substrate 101, a source electrode 103 and a drain electrode 104 respectively arranged at the two sides of the diamond substrate 101, a gate dielectric layer 105 arranged on the surface of the hydrogen terminal layer 102 and a gate electrode 106 arranged on the surface of the gate dielectric layer 105.
In this embodiment, the diamond substrate 101 is formed from diamond by homoepitaxy in an MPCVD apparatus, using H during growth2And CH4Mixed gas of (2), wherein CH4The proportion of (A) is 3-7%.
In the embodiment, the hydrogen termination layer 102 is formed by placing the diamond substrate 101 in an MPCVD chamber and performing hydrogen plasma treatment for 10min by using an MPCVD technique;
the temperature during the treatment is 700 ℃ to 900 ℃, a surface adsorption layer is formed, and the energy band is bent to form cavity accumulation.
In the present embodiment, the source electrode 103 and the drain electrode 104 are formed by depositing 100nm Au on both sides of the diamond substrate 101 to form ohmic contact with the surface of the diamond substrate 101.
In this embodiment, the gate electrode 106 is a conventional schottky contact or metal-dielectric-semiconductor structure.
In this embodiment, the gate dielectric layer 105 is Al2O3A film material.
In this embodiment, the diamond substrate 101 is made of single crystal diamond.
The device structure is prepared by the following steps:
example 1:
s1: using a colorless single crystal diamond 101 grown by MPCVD as a substrate, respectively exposing the upper and lower surfaces of the diamond substrate 101 to hydrogen plasma for 10min at a temperature of 850 ℃ to form a hydrogen termination layer 102, wherein the hydrogen flow rate is 500 sccm;
s2: depositing a layer of Au with the thickness of 100nm on two sides of a diamond substrate 101 with a hydrogen terminal layer 102 by electron beam evaporation, and forming ohmic contact with the surface of the diamond substrate to be used as a source electrode and a drain electrode;
s3: depositing Al with a thickness of 4nm on the upper and lower surfaces of the sample obtained in the previous step, and annealing at 80 deg.C for 30min to form Al with a thickness of 5nm2O3As a gate dielectric layer;
s4: and finally, depositing Al of 100nm on the surface of the gate dielectric layer, and stripping to form a gate electrode to finish the preparation of the device.
Example 2:
s1: using colorless single crystal diamond grown by MPCVD as a substrate, respectively exposing the upper surface and the lower surface of the diamond substrate 101 in hydrogen plasma for 5min at the temperature of 700-900 ℃ to form a hydrogen terminal layer 102, wherein the hydrogen flow rate is 450 sccm;
s2: depositing a layer of Au with the thickness of 50nm on two sides of the diamond substrate 101 with the hydrogen terminal layer 102 by electron beam evaporation, and forming ohmic contact with the surface of the diamond substrate 101 to be used as a source electrode 103 and a drain electrode 104;
s3: depositing Al with a thickness of 4nm on the upper and lower surfaces of the sample obtained in the previous step, and annealing at 70-90 deg.C for 25min to form Al with a thickness of 3nm2O3AsA gate dielectric layer 105;
s4: and finally, depositing 90nm Al on the surface of the gate dielectric layer 105, and stripping to form a gate electrode 106, thereby completing the preparation of the device.
Example 3:
s1: using colorless single crystal diamond grown by MPCVD as a substrate, respectively exposing the upper surface and the lower surface of the diamond substrate 101 in hydrogen plasma for 15min at the temperature of 900 ℃ to form a hydrogen terminal layer 102, wherein the hydrogen flow rate is 550 sccm;
s2: depositing a layer of Au with the thickness of 150nm on two sides of the diamond substrate 101 with the hydrogen terminal layer 102 by electron beam evaporation, and forming ohmic contact with the surface of the diamond substrate 101 to be used as a source electrode 103 and a drain electrode 104;
s3: depositing Al with a thickness of 4nm on the upper and lower surfaces of the sample obtained in the previous step, and annealing at 90 deg.C for 35min to form Al with a thickness of 10nm2O3As a gate dielectric layer 105;
s4: and finally, depositing 110nm of Al on the surface of the gate dielectric layer 105, and stripping to form a gate electrode 106, thereby completing the preparation of the device.
Fig. 2 and 3 show the switching characteristic comparison and frequency characteristic comparison of the device prepared under the condition of example 3 in the invention and the prior single-gate device structure under the condition of ensuring that other conditions are unchanged.
The diamond MOSFET adopting the double-grid structure can improve the saturation current, transconductance and the like of the device. The double-gate device has one more channel layer compared with a single-gate device, so that the on-resistance of the device is reduced under the condition that the threshold voltage of the device is not drifted, the saturation speed of carriers is improved through phase change, and the frequency characteristic of the device is enhanced.
It will be appreciated by those skilled in the art that the invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The embodiments disclosed above are therefore to be considered in all respects as illustrative and not restrictive. All changes which come within the scope of or equivalence to the invention are intended to be embraced therein.
Claims (8)
1. A structure of a MOSFET device based on a diamond substrate is characterized by comprising the diamond substrate (101), hydrogen terminal layers (102) arranged at the upper end and the lower end of the diamond substrate (101), source electrodes (103) and drain electrodes (104) respectively arranged at two sides of the diamond substrate (101), a gate dielectric layer (105) arranged on the surface of the hydrogen terminal layers (102) and a gate electrode (106) arranged on the surface of the gate dielectric layer (105).
2. A structure of a MOSFET device based on a diamond substrate according to claim 1, wherein: the diamond substrate (101) is formed by homoepitaxy of diamond in an MPCVD apparatus, using H during growth2And CH4Mixed gas of (2), wherein CH4The proportion of (A) is 3-7%.
3. A structure of a MOSFET device based on a diamond substrate according to claim 1, wherein: the hydrogen terminal layer (102) is formed by placing a diamond substrate (101) in an MPCVD cavity and treating the diamond substrate with hydrogen plasma for 10min by adopting an MPCVD technology;
the temperature during the treatment is 700 ℃ to 900 ℃, a surface adsorption layer is formed, and the energy band is bent to form cavity accumulation.
4. A structure of a MOSFET device based on a diamond substrate according to claim 1, wherein: the source electrode (103) and the drain electrode (104) are formed by depositing 100nm Au on two sides of the diamond substrate (101) to form ohmic contact with the surface of the diamond substrate (101).
5. A structure of a MOSFET device based on a diamond substrate according to claim 1, wherein: the gate electrode (106) is a conventional schottky contact or a metal-dielectric layer-semiconductor structure.
6. A structure of a MOSFET device based on a diamond substrate according to claim 1, wherein: the gate dielectric layer (105) is Al2O3A film material.
7. The structure of a diamond substrate based MOSFET device according to any of claims 1-6, wherein: the diamond substrate (101) is made of single crystal diamond.
8. A method of fabricating a structure for a MOSFET device based on a diamond substrate according to claim 1, comprising the steps of:
s1: using colorless single crystal diamond grown by MPCVD as a substrate, respectively exposing the upper surface and the lower surface of the diamond substrate (101) in hydrogen plasma for 5-15min at the temperature of 700-900 ℃ to form a hydrogen terminal layer (102), wherein the hydrogen flow rate is 450-550 sccm;
s2: depositing a layer of Au with the thickness of 50-150nm on two sides of a diamond substrate (101) with a hydrogen terminal layer (102) by utilizing electron beam evaporation, and forming ohmic contact with the surface of the diamond substrate (101) to be used as a source electrode (103) and a drain electrode (104);
s3: depositing Al with a thickness of 4nm on the upper and lower surfaces of the sample obtained in the previous step, and annealing at 70-90 deg.C for 25-35min to form Al with a thickness of 3-10nm2O3As a gate dielectric layer (105);
s4: and finally, depositing 90-110nm of Al on the surface of the gate dielectric layer (105), and stripping to form a gate electrode (106) to finish the preparation of the device.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09312300A (en) * | 1995-11-17 | 1997-12-02 | Tokyo Gas Co Ltd | Hydrogen terminated diamond depletion mesfet and manufacture of the depletion mesfet |
| CN103137691A (en) * | 2011-11-29 | 2013-06-05 | 西安电子科技大学 | Field effect transistor and manufacture method thereof |
| CN104865305A (en) * | 2015-05-21 | 2015-08-26 | 中国电子科技集团公司第十三研究所 | Hydrogen-terminated diamond field effect transistor biosensor adopting three-dimensional structure as well as preparation method of biosensor |
| CN107146756A (en) * | 2017-06-27 | 2017-09-08 | 中国科学院微电子研究所 | Method for preparing field effect transistor with diamond substrate |
-
2020
- 2020-12-29 CN CN202011592523.1A patent/CN112701162A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09312300A (en) * | 1995-11-17 | 1997-12-02 | Tokyo Gas Co Ltd | Hydrogen terminated diamond depletion mesfet and manufacture of the depletion mesfet |
| CN103137691A (en) * | 2011-11-29 | 2013-06-05 | 西安电子科技大学 | Field effect transistor and manufacture method thereof |
| CN104865305A (en) * | 2015-05-21 | 2015-08-26 | 中国电子科技集团公司第十三研究所 | Hydrogen-terminated diamond field effect transistor biosensor adopting three-dimensional structure as well as preparation method of biosensor |
| CN107146756A (en) * | 2017-06-27 | 2017-09-08 | 中国科学院微电子研究所 | Method for preparing field effect transistor with diamond substrate |
Non-Patent Citations (1)
| Title |
|---|
| D.KUECK ET AL: "Technology of passivated surface channel MESFETs with modified gated structures", 《ELSEVIER》 * |
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Address after: 241000 building 7, science and Technology Industrial Park, high tech Industrial Development Zone, Yijiang District, Wuhu City, Anhui Province Applicant after: Wuhu Research Institute of Xidian University Address before: No. 8, Wen Jin Xi Road, Yijiang District, Wuhu, Anhui Province Applicant before: Wuhu Research Institute of Xidian University |
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Application publication date: 20210423 |